JPH03280214A - Perpendicular magnetic recording medium and its production - Google Patents

Perpendicular magnetic recording medium and its production

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Publication number
JPH03280214A
JPH03280214A JP8010390A JP8010390A JPH03280214A JP H03280214 A JPH03280214 A JP H03280214A JP 8010390 A JP8010390 A JP 8010390A JP 8010390 A JP8010390 A JP 8010390A JP H03280214 A JPH03280214 A JP H03280214A
Authority
JP
Japan
Prior art keywords
thin film
magnetic
magnetic thin
substrate
feco
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8010390A
Other languages
Japanese (ja)
Inventor
Seiichiro Takahashi
誠一郎 高橋
Kotaro Matsuura
松浦 宏太郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP8010390A priority Critical patent/JPH03280214A/en
Priority to US07/564,256 priority patent/US5173370A/en
Priority to EP90115388A priority patent/EP0415155B1/en
Priority to DE69023835T priority patent/DE69023835T2/en
Publication of JPH03280214A publication Critical patent/JPH03280214A/en
Pending legal-status Critical Current

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Abstract

PURPOSE:To produce a magnetic recording medium having excellent perpendicular magnetic characteristics with good mass productivity by forming a FeCo-N magnetic thin film on a nonmagnetic substrate in a manner that this magnetic thin film has perpendicular magnetic anisotropy and a column-like structure in which the crystalline structure grows in the perpendicular direction to the substrate surface. CONSTITUTION:The perpendicular magnetic recording medium having an iron nitride magnetic layer having excellent perpendicular magnetic anisotropy is obtained by forming a FeCo-N magnetic thin film on a nonmagnetic substrate. This magnetic thin film consists of a partially nitrized alloy having the atomic compsn. ratio of Fe and Co expressed by Fe100-xCox (0<x<50), and has perpendicular magnetic anisotropy and a column-like structure in which crystalline structure grows in the perpendicular direction to the substrate surface. In the production process, the nonmagnetic substrate 7 is heated in a vacuum chamber 1, to which vapors of iron and cobalt are deposited from the perpendicular direction to the substrate surface. At the same time, nitrogen plasma 12 containing nytrogen ions and electrons is made to irradiate the vapor-deposited area. Thus, the FeCo-N magnetic thin film is formed on the substrate 7.

Description

【発明の詳細な説明】 (イ)産業上の利用分野 本発明は鉄−コバルトの窒化物からなる強磁性金属薄膜
を磁性層とする垂直磁気記録媒体及びその製造方法に関
する。
DETAILED DESCRIPTION OF THE INVENTION (a) Field of Industrial Application The present invention relates to a perpendicular magnetic recording medium whose magnetic layer is a ferromagnetic metal thin film made of iron-cobalt nitride, and a method for manufacturing the same.

(ロ)従来の技術 東北大の告時らにより発表された垂直磁気記録は、記録
密度が高くなるほど自己減磁作用が抑制されるため本質
的に高密度記録に適した記録方式である。垂直磁気記録
用の媒体としては、スパッタ法もしくは真空蒸着法で作
成したCo−Cr膜が発表されている。
(b) Prior art The perpendicular magnetic recording announced by Kotoki et al. of Tohoku University is a recording method that is essentially suitable for high-density recording because the self-demagnetizing effect is suppressed as the recording density increases. As media for perpendicular magnetic recording, Co--Cr films made by sputtering or vacuum evaporation have been announced.

Co−Cr膜は磁気異方性、飽和磁化ともに大きく垂直
記録媒体として優れているが、Coはコスト的に高価な
ため問題がある。上述の欠点を解消したものとして、例
えば特開昭59−228705号公報(HOI F 1
0/18)に開示されているように、安価なFeをベー
スにしたFeN系垂直磁気記録媒体が提案されている。
Although a Co--Cr film has large magnetic anisotropy and saturation magnetization and is excellent as a perpendicular recording medium, Co has a problem because it is expensive. For example, Japanese Patent Application Laid-Open No. 59-228705 (HOI F 1
0/18), an inexpensive FeN-based perpendicular magnetic recording medium based on Fe has been proposed.

これは六方晶系窒化鉄(ε−Few〜、N)を主体とす
る媒体であり、鉄、7’−Fe4N、t −F e 、
−、N、ζ−Fe、NのようなFeまたはその窒化物の
中から選ばれた少なくとも1つの粉末、粉末焼結体、バ
ルクを原料として、Ar気流中、Arと窒素の混合気流
中、もしくはAr、窒素、水素の混合気流中で物理蒸着
(スパッタ法、真空蒸着法)を行うことにより形成され
る。
This is a medium mainly composed of hexagonal iron nitride (ε-Few~, N), and contains iron, 7'-Fe4N, t -Fe,
-, N, ζ-Fe, and at least one powder selected from Fe or its nitrides such as N, a powder sintered body, or a bulk in an Ar gas flow or a mixed gas flow of Ar and nitrogen, Alternatively, it is formed by physical vapor deposition (sputtering method, vacuum evaporation method) in a mixed gas flow of Ar, nitrogen, and hydrogen.

しかし乍ら、上述のような大方晶系窒化鉄を主体とする
薄膜磁性体では、磁性層を高速で形成することが出来ず
、量産性に適した磁気記録媒体ではなかった。
However, with the above-mentioned thin film magnetic material mainly composed of orthogonal iron nitride, a magnetic layer cannot be formed at high speed, and the magnetic recording medium is not suitable for mass production.

また、高速で形成可能な垂直磁気異方性を有する磁気媒
体としては、例えば特願平1−208130号に示され
ているようなFeN系垂直磁気記録媒体が提案されてい
る。これは常磁性窒化鉄(ζ−Fe、N)が主体で強磁
性窒化鉄(α−Feおよびγ’−Fe4N相)が磁化を
担う組成構造を持ち、非磁性基板面に対して垂直方向に
微細な柱状構造を有し且つ垂直磁気異方性を示すFeN
系薄膜を磁性層として持つ媒体である。このような媒体
は、適度に加熱された非磁性の基板上に該基板上面と直
交する方向から鉄の蒸気を蒸着すると同時に、該蒸着部
に窒素イオンおよび電子を含有する窒素プラズマを照射
することにより高速形成される。
Further, as a magnetic medium having perpendicular magnetic anisotropy that can be formed at high speed, an FeN-based perpendicular magnetic recording medium as shown in Japanese Patent Application No. 1-208130 has been proposed. It has a compositional structure consisting mainly of paramagnetic iron nitride (ζ-Fe, N) and ferromagnetic iron nitride (α-Fe and γ'-Fe4N phases) that is responsible for magnetization. FeN has a fine columnar structure and exhibits perpendicular magnetic anisotropy
This is a medium that has a thin film based on the magnetic layer as its magnetic layer. Such a medium involves depositing iron vapor onto a moderately heated nonmagnetic substrate from a direction perpendicular to the top surface of the substrate, and simultaneously irradiating the vapor deposition area with nitrogen plasma containing nitrogen ions and electrons. formed at high speed.

しかしながら、このような窒化鉄系磁気記録媒体は、C
o−Cr膜と比べて、垂直磁気異方性磁界(Hk)、垂
直保磁力(Hc上)、飽和磁化(Ms)ともに低く、こ
れら垂直磁気特性は十分ではなかった。
However, such iron nitride-based magnetic recording media are
Compared to the o-Cr film, the perpendicular magnetic anisotropy field (Hk), perpendicular coercive force (on Hc), and saturation magnetization (Ms) were all low, and these perpendicular magnetic properties were not sufficient.

(ハ)発明が解決しようとする課題 本発明は上記従来例の欠点に鑑み為されたものであり、
優れた垂直磁気異方性を有する窒化鉄系の磁性層を有す
る垂直磁気記録媒体及びその製造方法を提供することを
目的とするものである。
(c) Problems to be Solved by the Invention The present invention has been made in view of the drawbacks of the above-mentioned conventional examples.
The object of the present invention is to provide a perpendicular magnetic recording medium having an iron nitride magnetic layer having excellent perpendicular magnetic anisotropy and a method for manufacturing the same.

(ニ)課題を解決するための手段 本発明の垂直磁気記録媒体は、非磁性の基板上に鉄とコ
バルトの原子量組成比がF e 、、。−xCo!(0
<X<50)で表わされる合金の部分窒化物からなり、
結晶構造が前記基板上面に対して垂直方向に延びる柱状
構造である垂直磁気異方性を有するFeCo−N系磁性
薄膜を被着形成したことを特徴とする。
(d) Means for Solving the Problems The perpendicular magnetic recording medium of the present invention is provided on a nonmagnetic substrate with an atomic weight composition ratio of iron and cobalt of F e . -xCo! (0
<X<50) consisting of a partial nitride of an alloy,
The present invention is characterized in that a FeCo--N magnetic thin film having perpendicular magnetic anisotropy and having a columnar crystal structure extending in a direction perpendicular to the upper surface of the substrate is deposited.

また、本発明の垂直磁気記録媒体の製造方法は、加熱さ
れた非磁性の基板上に該基板上面と直交する方向から鉄
・コバルトの蒸気を蒸着すると同時に、該蒸着部に窒素
イオン及び電子を含有する窒素プラズマを照射すること
により前記基板上にFeCo−N系磁性薄膜を被着形成
することを特徴とする。
Further, in the method for manufacturing a perpendicular magnetic recording medium of the present invention, iron/cobalt vapor is deposited onto a heated nonmagnetic substrate from a direction perpendicular to the upper surface of the substrate, and at the same time, nitrogen ions and electrons are applied to the vapor deposition portion. The present invention is characterized in that a FeCo--N based magnetic thin film is deposited and formed on the substrate by irradiating nitrogen containing plasma.

(ホ)作 用 上記構造の垂直磁気記録媒体では、常磁性(室温)窒化
鉄相(c −F e *−*N Ll<xis、?+、
ζ−Fe、N)の結晶化に伴い、フェロ磁性相(α−F
e、7’−Fe、N、a−Co等)との相分離に磁気的
分離効果が起こり、これが基板上面に対して垂直方向に
伸びた微細柱状構造による形状異方性と相乗することに
より垂直磁気異方性の優れた鉄コバルト部分窒化物系の
磁性層が形成される。
(E) Effect In the perpendicular magnetic recording medium having the above structure, the paramagnetic (room temperature) iron nitride phase (c −Fe *−*N Ll<xis, ?+,
With the crystallization of ζ-Fe, N), the ferromagnetic phase (α-F
A magnetic separation effect occurs in the phase separation with e, 7'-Fe, N, a-Co, etc.), and this synergizes with the shape anisotropy due to the fine columnar structure extending perpendicularly to the top surface of the substrate. An iron-cobalt partial nitride magnetic layer having excellent perpendicular magnetic anisotropy is formed.

また、上述の製造方法では、プラズマ生成室からの低い
運動エネルギー領域でのイオン照射と適当な基板温度と
の相互作用によりFeCo−Hの結晶化が進む。
Further, in the above-described manufacturing method, crystallization of FeCo-H progresses due to the interaction between ion irradiation in a low kinetic energy region from the plasma generation chamber and an appropriate substrate temperature.

(へ)実施例 第1図は本実施例で用いられるイオンアシスト蒸着法に
よる垂直磁気記録媒体の製造装置の概略断面図である。
(F) Embodiment FIG. 1 is a schematic cross-sectional view of an apparatus for manufacturing a perpendicular magnetic recording medium by the ion-assisted vapor deposition method used in this embodiment.

図中(1)は排気系(2)により内部がlXl0−’T
orr以下の高真空に保たれた真空槽であり、該真空槽
(1)の内部にはるつぼ(3)、基板ホルダー(4)及
びプラズマ生成富山が配設されている。前記るつぼ(3
ン内には蒸発源である鉄コバルト合金(6)が収納され
ている。前記基板ホルダー(4)の下面には非磁性の基
板(7)が装着されており、該基板(7)の真下に前記
るつぼ(3)が配置されている。また、前記基板ホルダ
ー(4)の内部にはヒーター(図示せず)が装着されて
おり、該ヒーターにより前記基板(7)の温度が制御さ
れる。前記プラズマ生成室録」は内部にフィラメント(
8)及びアノード(9)が装着されており、周面にはソ
レノイドコイル(10)が巻回されている。前記フィラ
メント(8)には直流電源(lla)により20〜30
Aの電流が流れており、前記アノード(9)には直流電
源(Ilb)により100Vの正の電圧が印加されてい
る。また、前記プラズマ生成室lのプラズマ(12)放
出側の開口部には電気的に接地された多孔形状のグリッ
ド(13)が装着されており、該グリッド(13)によ
りプラズマ生成室葺」の内外には圧力差が生じる。(1
5)は前記プラズマ生成室い」の内部に窒素ガスを導入
するためのガス導入管である。
In the figure (1), the inside is lXl0-'T due to the exhaust system (2).
This is a vacuum chamber maintained at a high vacuum of less than orr, and a crucible (3), a substrate holder (4), and a plasma generation Toyama are arranged inside the vacuum chamber (1). The crucible (3
An iron-cobalt alloy (6), which is an evaporation source, is housed in the chamber. A non-magnetic substrate (7) is mounted on the lower surface of the substrate holder (4), and the crucible (3) is placed directly below the substrate (7). Further, a heater (not shown) is installed inside the substrate holder (4), and the temperature of the substrate (7) is controlled by the heater. The plasma generation chamber has a filament (
8) and an anode (9) are attached, and a solenoid coil (10) is wound around the circumferential surface. The filament (8) is supplied with a voltage of 20 to 30
A current is flowing, and a positive voltage of 100 V is applied to the anode (9) by the DC power supply (Ilb). Furthermore, an electrically grounded porous grid (13) is attached to the opening on the plasma (12) emission side of the plasma generation chamber l, and the grid (13) allows the roof of the plasma generation chamber to be closed. A pressure difference occurs between the inside and outside. (1
5) is a gas introduction pipe for introducing nitrogen gas into the plasma generation chamber.

上述の本実施例の製造装置では、ガス導入管(15)を
通ってプラズマ生成室山内に導入された中性の窒素分子
は、フィラメント(8)から放出されアノード(9)に
よって加速された熱電子と衝突することによりイオン化
される。このイオン化により発生した低エネルギーの窒
素イオンと電子とは窒素プラズマ(12)となり、ソレ
ノイドコイル(10)により形成された磁場勾配とグリ
ッド(13)による圧力差とによってプラズマ生成宗祖
の開口部から外部に放射状に放出される。この放出され
た窒素プラズマ(12)はるつぼ(3)からの鉄・コバ
ルトの蒸気(14)と同時に基板(7)に照射される。
In the manufacturing apparatus of this embodiment described above, the neutral nitrogen molecules introduced into the plasma generation chamber through the gas introduction pipe (15) are heated by the heat released from the filament (8) and accelerated by the anode (9). It is ionized by collision with electrons. The low-energy nitrogen ions and electrons generated by this ionization become nitrogen plasma (12), which is externalized from the opening of the plasma generator by the magnetic field gradient formed by the solenoid coil (10) and the pressure difference by the grid (13). is emitted radially. This emitted nitrogen plasma (12) is irradiated onto the substrate (7) at the same time as the iron-cobalt vapor (14) from the crucible (3).

このため、前記基板(7)に到達とた窒素イオンの正の
電荷は電子によって中和され、前記基板(7)はチャー
ジアップしない。また、前記窒素イオン及び電子の運動
エネルギーは100eV以下と小さいので基板(7)上
に形成された窒化鉄コバルト部分窒化物磁性薄膜(以下
 FeCo−N磁性薄膜)は熱解離を生じない。
Therefore, the positive charges of the nitrogen ions that have reached the substrate (7) are neutralized by electrons, and the substrate (7) is not charged up. Furthermore, since the kinetic energy of the nitrogen ions and electrons is as small as 100 eV or less, the iron nitride cobalt partial nitride magnetic thin film (hereinafter referred to as FeCo-N magnetic thin film) formed on the substrate (7) does not undergo thermal dissociation.

上述の製造装置を使用して下記の条件でフィルム基板上
にFeCo−N磁性薄膜を形成した。
A FeCo-N magnetic thin film was formed on a film substrate using the above-mentioned manufacturing apparatus under the following conditions.

−成膜条件− 背圧 窒素ガス圧力 成膜速度 窒素イオン電流密度 窒素イオンの運動エネルギー 鉄コバルト蒸気の入射角 フィルム基板温度 FeCo組成比 (蒸発源の合金組成比) IXIO−’Torr以下 2X10−’Torr 100〜750人/m1n 2.0mA/cm鵞 100eV以下 90゜ 100℃ Fe+*o+Fe5aCO+o+ FevoCOsoJeaoCOao+ Fe5oCO*oJesoCOto+ Co、。。-Film forming conditions- Back pressure nitrogen gas pressure Film formation speed Nitrogen ion current density Kinetic energy of nitrogen ions Angle of incidence of iron-cobalt vapor Film substrate temperature FeCo composition ratio (Alloy composition ratio of evaporation source) IXIO-’Torr or less 2X10-’Torr 100-750 people/m1n 2.0mA/cm 100eV or less 90° 100℃ Fe+*o+Fe5aCO+o+ FevoCOsoJeaoCOao+ Fe5oCO*oJesoCOto+ Co. .

第2図(a)(b)は上述の成膜条件で形成されたFe
Co−N磁性薄膜のFeCoにおけるCo含有量と垂直
磁気特性(垂直磁気異方性磁界H,k、垂直保磁力Hc
土、飽和磁化4πM s )との関係を示したものであ
る。Coの含有量は夫々の条件で形成されたFeCo−
N磁性薄膜をXPS分析(電子分光法)により測定して
求めたものである。尚、第2図(a)は飽和磁化4πM
sが3.2〜3.6KGaussである試料についての
データであり、第2図(b)は窒素含有量が1lat%
である試料についてのデータである。
Figures 2(a) and 2(b) show Fe film formed under the above-mentioned film formation conditions.
Co content and perpendicular magnetic properties in FeCo of Co-N magnetic thin film (perpendicular magnetic anisotropy field H, k, perpendicular coercive force Hc
It shows the relationship between soil and saturation magnetization (4πM s ). The Co content is FeCo- formed under each condition.
It was obtained by measuring an N magnetic thin film by XPS analysis (electron spectroscopy). In addition, Fig. 2(a) shows the saturation magnetization 4πM
Figure 2(b) shows the data for a sample in which s is 3.2 to 3.6K Gauss, and the nitrogen content is 1lat%.
This is data for a sample.

第2図(a)から判るようにFeCo−N磁性薄膜の垂
直磁気異方性磁界Hkは、FeN磁性薄膜の2.8KO
eからCo含有量の増加と件に増大し、FeとCoの原
子量組成比が77:23であるF e ttc o *
s−N磁性薄膜の時最大値約4.0KOeとなり、更に
Coの含有量が増加すると減少し、COの含有量が60
at%を起えるとFeN磁性薄膜より小さくなる。この
結果を垂直磁気異方性磁界Hkと異方性エネルギーKu
との関係式Hk = 2 K u / M sにあては
めると、Coの添加(但し、0〜32at%範囲内)と
共に磁性薄膜の異方性エネルギーKuが増大したため垂
直磁気異方性磁界Hkが向上したことが判る。尚、Co
N磁性薄膜の垂直磁気異方性磁界Hkは2.3KOeと
FeN磁性薄膜と比べて低い値である。
As can be seen from Figure 2(a), the perpendicular magnetic anisotropy field Hk of the FeCo-N magnetic thin film is 2.8KO of the FeCo-N magnetic thin film.
Fe ttco * where the atomic weight composition ratio of Fe and Co is 77:23, which increases from e to Co content.
The maximum value is about 4.0 KOe when the s-N magnetic thin film is used, and it decreases as the Co content increases, and the CO content reaches 60 KOe.
When the at% is increased, it becomes smaller than that of a FeN magnetic thin film. This result is expressed as perpendicular magnetic anisotropy field Hk and anisotropy energy Ku.
Applying the relational expression Hk = 2 K u / M s, it can be seen that the perpendicular magnetic anisotropy field Hk improves as the anisotropy energy Ku of the magnetic thin film increases with the addition of Co (within the range of 0 to 32 at%). I see what you did. Furthermore, Co
The perpendicular magnetic anisotropy field Hk of the N magnetic thin film is 2.3 KOe, which is a lower value than that of the FeN magnetic thin film.

また、FeCo−N磁性薄膜の垂直保磁力Hc土のCo
含有量依存性は垂直磁気異方性磁界Hkと略同様の傾向
を示し、Coの含有量が23at%近傍で最大値的60
00eとなり、80at%以下のCoの含有量ではFe
N磁性薄膜よりも高い値を示す。
In addition, the perpendicular coercive force of FeCo-N magnetic thin film Hc soil Co
The content dependence shows almost the same tendency as the perpendicular magnetic anisotropy field Hk, and the maximum value is 60% when the Co content is around 23at%.
00e, and at a Co content of 80 at% or less, Fe
It shows a higher value than the N magnetic thin film.

CoCr垂直磁気テープの磁気特性は、Hk2.2kO
e、He工5000e、4πMs7゜2kGaussと
発表されており(「日本応用磁気学会誌Vo 1.12
、Na3.1988JP、63Table2参照)、垂
直磁化膜の磁気特性として、電磁変換特性の立場から垂
直磁気異方性磁界Hkはこの程度の大きさでよく、飽和
磁化4πMSが比較的高めに設計されている。このこと
は、同程度の垂直磁気異方性磁界Hkを有する磁性薄膜
では飽和磁化4πMsの大きさを比較することが重要で
あることを示している。
The magnetic properties of CoCr perpendicular magnetic tape are Hk2.2kO
It has been announced that the
, Na3.1988JP, 63Table 2) As the magnetic properties of the perpendicularly magnetized film, the perpendicular magnetic anisotropy field Hk may be of this magnitude from the standpoint of electromagnetic conversion characteristics, and the saturation magnetization 4πMS is designed to be relatively high. There is. This shows that it is important to compare the magnitude of the saturation magnetization 4πMs in magnetic thin films having similar perpendicular magnetic anisotropy fields Hk.

また、第2図(b)から判るようにFeCo−N磁性薄
膜の飽和磁化4πMsはCOの含有量が25at%近傍
で最大値的3.4kGaussを示し、50at%以下
のCOの含有量ではFeN磁性薄膜よりも高い値を示す
Furthermore, as can be seen from Fig. 2(b), the saturation magnetization 4πMs of the FeCo-N magnetic thin film shows a maximum value of 3.4 kGauss when the CO content is around 25 at%, and when the CO content is less than 50 at%, the FeCo-N magnetic thin film has a maximum value of 3.4 kGauss. This value is higher than that of magnetic thin films.

以上のことからCoの含有量が50at%以下の場合、
即ち、鉄とコバルトの原子量組成比がFerae−xc
Ox (0<X<50)で表わされるFeCo−N磁性
薄膜は、FeN磁性薄膜に対して垂直磁気異方性磁界H
k、垂直保磁力Hc土、飽和磁化4πMs全てが向上す
ることが判る。
From the above, when the Co content is 50 at% or less,
That is, the atomic weight composition ratio of iron and cobalt is Ferae-xc.
The FeCo-N magnetic thin film represented by Ox (0<X<50) is exposed to a perpendicular magnetic anisotropy field H with respect to the FeN magnetic thin film.
It can be seen that k, vertical coercive force Hc, and saturation magnetization 4πMs all improve.

第3図、第4図、第5図、第6図、第7図、第8図及び
第9図は夫々上述の成膜条件で形成された各種FeCo
−N磁性薄膜の垂直磁気特性の飽和磁化依存性を示す。
3, 4, 5, 6, 7, 8, and 9 show various FeCo films formed under the above-mentioned film formation conditions, respectively.
The saturation magnetization dependence of the perpendicular magnetic properties of a -N magnetic thin film is shown.

第3図に示したFeN磁性薄膜の垂直磁気特性に対して
第4図に示したFeとCoとの原子量組成比が94:6
であるFe□Co5−N磁性薄膜は、飽和磁化4πMs
が2000−5000Gaussの範囲では垂直保磁力
Hc土はほとんど変化しないが、垂直磁気異方性磁界H
kは向上する。また、第5図、第6図、及び第7図に夫
々示したFeとCoとの原子量組成比が76 : 24
.77:23.66 : 34であるFeraCOx 
 N磁性薄膜、F e ttc o xs−N磁性薄膜
、Fem5COs*−N磁性薄膜は、飽和磁化4 yr
 M sが2000−5000Gau s sの範囲で
は、FeN磁性薄膜に対して垂直磁気異方性磁界Hk及
び垂直保、磁力Hc土が共に向上する。また、第8図に
示したFeとCoとの原子量組成比が45 : 55で
あるF e 4gCo 1s−N磁性薄膜及び第9図に
示したCo−N磁性薄膜は、FeN磁性薄膜に対して垂
直磁気異方性磁界Hkが大幅に低下する。以上のことか
ら、飽和磁化4πMsが2000〜5000Gau s
 sの範囲内では、FeとCoとの原子量組成比が94
:6〜66:34の範囲内であるFeCo−N磁性薄膜
はFeN磁性薄膜に対して垂直磁気異方性磁界Hkが向
上し、特に、FeとCoとの原子量組成比が77 : 
23−66 : 34の範囲内であるFeCo−N磁性
薄膜はFeN磁性薄膜に対して垂直磁気異方性磁界Hk
及び垂直保磁力Hc上が共に向上することが判る。
For the perpendicular magnetic properties of the FeN magnetic thin film shown in Fig. 3, the atomic weight composition ratio of Fe and Co shown in Fig. 4 is 94:6.
The Fe□Co5-N magnetic thin film has a saturation magnetization of 4πMs
In the range of 2000-5000 Gauss, the vertical coercive force Hc hardly changes, but the perpendicular magnetic anisotropy field H
k will improve. Further, the atomic weight composition ratio of Fe and Co shown in FIGS. 5, 6, and 7, respectively, is 76:24.
.. 77:23.66: FeraCOx which is 34
N magnetic thin film, Fettcoxs-N magnetic thin film, Fem5COs*-N magnetic thin film have a saturation magnetization of 4 yr.
When M s is in the range of 2000 to 5000 Gauss, both the perpendicular magnetic anisotropy field Hk and the perpendicular coercivity and magnetic force Hc are improved for the FeN magnetic thin film. Furthermore, the Fe 4gCo 1s-N magnetic thin film shown in FIG. 8 and the Co-N magnetic thin film shown in FIG. The perpendicular magnetic anisotropy field Hk is significantly reduced. From the above, the saturation magnetization 4πMs is 2000 to 5000 Gaus
Within the range of s, the atomic weight composition ratio of Fe and Co is 94
:6 to 66:34, the perpendicular magnetic anisotropy field Hk of the FeCo-N magnetic thin film is improved compared to the FeN magnetic thin film, and in particular, the atomic weight composition ratio of Fe and Co is 77:3.
23-66: The FeCo-N magnetic thin film within the range of 34 has a perpendicular magnetic anisotropy field Hk with respect to the FeN magnetic thin film.
It can be seen that both the vertical coercive force Hc and the perpendicular coercive force Hc are improved.

第10図(a )(b )(c )は夫々、FeN磁性
薄膜、FeとCoとの原子量組成比が68:32である
Fe5sColt N磁性薄膜、CoN磁性薄膜の走査
型電子顕微鏡による微細構造の断面写真である。
Figures 10(a), (b), and (c) show the microstructures of an FeN magnetic thin film, a Fe5sColtN magnetic thin film with an atomic weight composition ratio of Fe and Co of 68:32, and a CoN magnetic thin film, respectively, using a scanning electron microscope. This is a cross-sectional photograph.

第10図(a)(b)から判るように垂直異方性磁界の
良好なFeN磁性薄膜及びFeaaCojz−N磁性薄
膜では、微細な柱状構造が基板界面から膜表面に至るま
で基板に対して垂直方向に成長しているのが観察される
。しかし乍ら、両者の間では、柱状粒子の粒径に大きな
違いはみられず、両者とも約500人である。また、第
10図(C)から判るように垂直異方性磁界の劣るCo
N磁性薄膜では、微細柱状構造が不明瞭であり、コラム
レス構造を有していることが観察される。即ち、以上の
結果から磁性薄膜が良好な垂直磁気異方性を有するため
には、断面形状に明瞭な微細柱状構造の形成が不可欠で
あることが判り、FeCo−N磁性薄膜の垂直磁気異方
性の主な起源としては、FeN磁性薄膜同様形状磁気異
方性が考えられる。
As can be seen from Figure 10(a) and (b), in the FeN magnetic thin film and FeaaCojz-N magnetic thin film with good perpendicular anisotropy magnetic field, the fine columnar structure is perpendicular to the substrate from the substrate interface to the film surface. observed to grow in the direction. However, there is no significant difference in the particle size of the columnar particles between the two, and both are about 500 particles. In addition, as can be seen from Figure 10(C), Co has an inferior perpendicular anisotropy field.
In the N magnetic thin film, the fine columnar structure is unclear and it is observed that it has a columnless structure. In other words, from the above results, it is clear that in order for a magnetic thin film to have good perpendicular magnetic anisotropy, it is essential to form a fine columnar structure with a clear cross-sectional shape. As with FeN magnetic thin films, shape magnetic anisotropy is considered to be the main origin of the magnetic properties.

第1表に第10図(a)(b)(c)に夫々示した磁性
薄膜の磁気特性を示す。
Table 1 shows the magnetic properties of the magnetic thin films shown in FIGS. 10(a), 10(b), and 10(c), respectively.

第1表 第11図は成膜速度を変えることによりFeCo−N磁
性薄膜の窒化度を変化させた場合のFeCo−N磁性薄
膜のX線回折パターンの変化を示す図である。FeCo
−N磁性薄膜の窒化度は、成膜速度が遅い程大きくなる
。第11図(a)(b)(c)に夫々示した試料A、B
、Cの成膜速度は360人/ m i n、328人/
min、100人/minである。
FIG. 11 of Table 1 shows the change in the X-ray diffraction pattern of the FeCo-N magnetic thin film when the degree of nitridation of the FeCo-N magnetic thin film is changed by changing the deposition rate. FeCo
The degree of nitridation of the −N magnetic thin film increases as the film formation rate decreases. Samples A and B shown in FIGS. 11(a), (b), and (c), respectively.
, C film formation rate is 360 people/min, 328 people/min.
min, 100 people/min.

第2表は第11図の分析に使用した試料A、B、CのF
eCo−N磁性薄膜の作製条件、磁気特性、及びピーク
回折角より同定された生成相をまとめたものである。
Table 2 shows the F of samples A, B, and C used for the analysis in Figure 11.
This is a summary of the production conditions, magnetic properties, and generated phases identified from the peak diffraction angle of the eCo-N magnetic thin film.

以下余白 第11図及び第2表から判るように各試料A、B、Cと
もa  F e−r ’  F e4N、 F esN
、ε Few−sN、ζ−FesN、a−Co、γ−C
o、N、δ−CO!Nの混合パターンを示している。試
料A、Hのように高い異方性磁界を有するFeCo−N
垂直磁化膜に注目すると、膜中には窒化されていない金
属相(α−Fe、α−Co)が残っており、膜が部分的
に窒化された状態にあることが判る。即ち、試料A、 
BのFeCo−N磁性薄膜が鉄コバルトの部分窒化物よ
りなることが判る。FeCo−N磁性薄膜はこれらの相
の集合体で構成されており、その構成比は膜の窒化度に
大きく依存している。即ち、窒化度を大きくすると金属
相(a−Fe、a−Co)や7”−Fe。
As can be seen from the margins in Figure 11 and Table 2 below, each sample A, B, and C are
, ε Few-sN, ζ-FesN, a-Co, γ-C
o, N, δ-CO! A mixed pattern of N is shown. FeCo-N with high anisotropic magnetic field like samples A and H
Looking at the perpendicularly magnetized film, it can be seen that unnitrided metal phases (α-Fe, α-Co) remain in the film, and the film is in a partially nitrided state. That is, sample A,
It can be seen that the FeCo--N magnetic thin film of B is made of iron-cobalt partial nitride. The FeCo--N magnetic thin film is composed of an aggregate of these phases, and the composition ratio largely depends on the degree of nitridation of the film. That is, when the degree of nitridation is increased, metal phases (a-Fe, a-Co) and 7''-Fe are formed.

N相等は少なくなり、高窒化相(Fe、N、ε−F e
 、−、N、ζ−F e 、N、7−Co 、N、δ−
Co、N)が増加する。t  F e x N (s<
x<!、+t)1ζ−FexN相は室温で常磁性を示す
ので、成膜速度を減少させるに従い飽和磁化が減少した
理由はこれら常磁性相の構成比が増加したためと考えら
れる。FeCo−N磁性薄膜中には強磁性成分(α−F
e、r”−Fe+N、Fe、N、  ε−FeXN、、
47<x<3.、a−Co、7  Co5N)と常磁性
成分(t−F e x N (!<x<宜、 471%
 ζ−Fe。
The N phase, etc. decreases, and the highly nitrided phase (Fe, N, ε-Fe
, −, N, ζ-F e , N, 7-Co , N, δ-
Co, N) increases. t F e x N (s<
x<! , +t)1ζ-FexN phase exhibits paramagnetic properties at room temperature, so the reason why the saturation magnetization decreased as the film forming rate decreased is considered to be that the composition ratio of these paramagnetic phases increased. The FeCo-N magnetic thin film contains a ferromagnetic component (α-F
e, r”-Fe+N, Fe, N, ε-FeXN,,
47<x<3. , a-Co, 7Co5N) and the paramagnetic component (t-Fe x N (!<x<y, 471%
ζ-Fe.

N、δ−Co、N)が共存することから、FeCo−N
磁性薄膜の垂直磁気異方性の起源の1つとしてFeN磁
性薄膜と同様に常磁性相による強磁性相の磁気的分離効
果が考えられる。
N, δ-Co, N) coexist, FeCo-N
One of the origins of the perpendicular magnetic anisotropy in a magnetic thin film is considered to be the magnetic separation effect of the ferromagnetic phase by the paramagnetic phase, similar to the FeN magnetic thin film.

第12図(a)(b)は32at%のCOを含有するF
 e ssCo st−N磁性薄膜磁気特性Hk3.3
KOe、Hc土52000e、4πMs3.4KGau
ssのXPSスペクトルを示す図である。
Figures 12(a) and (b) show F containing 32 at% CO.
e ssCo st-N magnetic thin film magnetic properties Hk3.3
KOe, Hc soil 52000e, 4πMs3.4KGau
It is a figure showing the XPS spectrum of ss.

第12図(a)に示したFeの2P3/2準位に注目す
ると707eVにFeのピークが存在し、これに重畳し
て窒素との化学結合のため高エネルギー側にブロードに
化学シフトした窒化鉄のピークが見られる。また、第1
2図(b)に示したCoの2P3/2準位に注目すると
窒化により化学シフトしたピークの割合はFeの場合に
比べて少なく、COの大部分が金属の状態で存在してい
ることが判る。以上の結果からCoはFeよりも窒化さ
れにくいことは明らかであり、このことは窒化との親和
性に違いのあるCOを添加することにより、膜成長過程
での窒化物形成状態を変化させ、常磁性窒化相による強
磁性相の磁気的分離効果の向上、即ち、磁気異方性エネ
ルギー(Ku)の向上が期待できる可能性のあることを
示している。
If we pay attention to the 2P3/2 level of Fe shown in Figure 12(a), there is a Fe peak at 707 eV, which is superimposed on the nitridation with a broad chemical shift to the high energy side due to chemical bonding with nitrogen. Iron peaks can be seen. Also, the first
Focusing on the 2P3/2 level of Co shown in Figure 2(b), the proportion of peaks chemically shifted by nitridation is smaller than that of Fe, indicating that most of the CO exists in a metallic state. I understand. From the above results, it is clear that Co is less likely to be nitrided than Fe, and this means that by adding CO, which has a different affinity for nitriding, the state of nitride formation during the film growth process can be changed. This shows that it is possible to expect an improvement in the magnetic separation effect of the ferromagnetic phase by the paramagnetic nitride phase, that is, an improvement in the magnetic anisotropy energy (Ku).

第3表にXPS分析に使用したFeCo−N磁性薄膜の
磁気特性と組成分析結果を示す。
Table 3 shows the magnetic properties and compositional analysis results of the FeCo--N magnetic thin film used in the XPS analysis.

第3表 第3表により窒化含有量が同等、即ち窒化度が同等であ
る試料り、Eの磁気特性を比較すると、磁性薄膜中のC
o含有量が多いほど飽和磁化が向上していることが明ら
かである。CO添加によるFeCo−N磁性薄膜の飽和
磁化の向上は、磁化を担う強磁性a−Fe相の磁気モー
メントがC。
Table 3 Comparing the magnetic properties of E with the same nitridation content, that is, the same degree of nitridation, shows that C in the magnetic thin film is
It is clear that the higher the o content, the better the saturation magnetization. The improvement in the saturation magnetization of the FeCo-N magnetic thin film by adding CO is due to the fact that the magnetic moment of the ferromagnetic a-Fe phase, which is responsible for magnetization, is C.

添加量と共に変化することで説明される。This is explained by the fact that it changes with the amount added.

第4表及び第5表に上述の成膜条件で形成したFeCo
−N磁性薄膜とFeN磁性薄膜との磁気特性を示す。
Tables 4 and 5 show FeCo films formed under the above film formation conditions.
-The magnetic properties of the N magnetic thin film and the FeN magnetic thin film are shown.

(注)FeColltは1着ソースの組成第4表 (注)FeCo1ml!IのI! 第5表 第4表及び第5表から判るようにFeN磁性薄膜に適当
な量のCoを添加することにより、磁性薄膜には垂直磁
気異方性磁界Hk、垂直保磁力HC土、飽和磁化4πM
sの向上がみられた。垂直磁気異方性磁界Hkが向上し
た原因としては、窒化との親和性に違いのあるCoを添
加することにより、膜成長過程での窒化物形成様態が変
化し、常磁性窒化相による強磁性相の相分離が促進され
、磁気的分離効果が向上した点が挙げられる。
(Note) FeCollt is the composition of the first sauce in Table 4. (Note) FeCo1ml! I of I! Table 5 As can be seen from Tables 4 and 5, by adding an appropriate amount of Co to the FeN magnetic thin film, the magnetic thin film has a perpendicular magnetic anisotropy field of Hk, a perpendicular coercive force of HC, and a saturation magnetization of 4πM.
An improvement in s was observed. The reason for the improvement in the perpendicular magnetic anisotropy field Hk is that the addition of Co, which has a different affinity for nitriding, changes the manner in which nitrides are formed during the film growth process, which increases the ferromagnetic property due to the paramagnetic nitride phase. One point is that the phase separation of the phases is promoted and the magnetic separation effect is improved.

また、垂直保磁力Hc上が向上した原因としては、前述
の垂直磁気異方性磁界Hkの向上に依るものである。ま
た、飽和磁化4πMsが向上した原因としては、Coの
添加により磁化を担う強磁性α−Fe相の磁気モーメン
トが増加した点にあると考えられる。
Further, the reason for the improvement in the perpendicular coercive force Hc is due to the above-mentioned improvement in the perpendicular magnetic anisotropy field Hk. Further, the reason for the improvement in the saturation magnetization 4πMs is considered to be that the addition of Co increased the magnetic moment of the ferromagnetic α-Fe phase responsible for magnetization.

また、上述の磁性Wi膜の形成方法に依れば、成膜速度
はスパッタ法を用いた場合(約50人/m1n)に比べ
て倍量上(100〜750人/m1n)となり、この磁
性薄膜の形成方法が量産性に適していることは明らかで
ある。
Furthermore, according to the method for forming the magnetic Wi film described above, the film formation rate is twice as high (100 to 750 people/m1n) as compared to when using the sputtering method (approximately 50 people/m1n). It is clear that the thin film formation method is suitable for mass production.

(ト)発明の効果 本発明に依れば、垂直磁気特性に優れた垂直磁気記録媒
体を提供し得る。
(G) Effects of the Invention According to the present invention, a perpendicular magnetic recording medium with excellent perpendicular magnetic properties can be provided.

また、本発明に依れば、上述の垂直磁気特性に優れた磁
気記録媒体を量産性よく製造することが出来る垂直磁気
記録媒体の製造方法を提供し得る。
Further, according to the present invention, it is possible to provide a method for manufacturing a perpendicular magnetic recording medium, which allows the above-mentioned magnetic recording medium having excellent perpendicular magnetic properties to be manufactured with good mass productivity.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の製造装置の概略断面図、第2図はFe
Co−N磁性薄膜の垂直磁気特性のC。 含有量依存性を示す図、第3図、第4図、第5図、第6
図、第7図、第8図及び第9図は夫々はFeCo−N磁
性薄膜の垂直磁気特性の飽和磁化依存性を示す図、第1
0図は磁性薄膜の結晶構造を示す走査型電子顕微鏡写真
、第11図はFeCo−N磁性薄膜のX線回折パターン
を示す図、第12図はFeCo−N磁性薄膜のxpsス
ペクトルを示す図である。
FIG. 1 is a schematic cross-sectional view of the manufacturing apparatus of the present invention, and FIG.
C of perpendicular magnetic properties of Co--N magnetic thin film. Diagrams showing content dependence, Figures 3, 4, 5, and 6
7, 8 and 9 are diagrams showing the saturation magnetization dependence of the perpendicular magnetic properties of the FeCo-N magnetic thin film, respectively.
Figure 0 is a scanning electron micrograph showing the crystal structure of the magnetic thin film, Figure 11 is the X-ray diffraction pattern of the FeCo-N magnetic thin film, and Figure 12 is the xps spectrum of the FeCo-N magnetic thin film. be.

Claims (2)

【特許請求の範囲】[Claims] (1)非磁性の基板上に鉄とコバルトの原子量組成比が
Fe_1_0_0_−_xCo_X(0<X<50)で
表わされる合金の部分窒化物からなり、結晶構造が前記
基板上面に対して垂直方向に延びる柱状構造である垂直
磁気異方性を有するFeCo−N系磁性薄膜を被着形成
したことを特徴とする垂直磁気記録媒体。
(1) A partial nitride of an alloy with an atomic weight composition ratio of iron and cobalt expressed as Fe_1_0_0_-_xCo_X (0<X<50) is formed on a nonmagnetic substrate, and the crystal structure is vertical to the top surface of the substrate. A perpendicular magnetic recording medium characterized in that a FeCo-N based magnetic thin film having an elongated columnar structure and having perpendicular magnetic anisotropy is deposited.
(2)加熱された非磁性の基板上に該基板上面と直交す
る方向から鉄・コバルトの蒸気を蒸着すると同時に、該
蒸着部に窒素イオン及び電子を含有する窒素プラズマを
照射することにより前記基板上にFeCo−N系磁性薄
膜を被着形成することを特徴とする垂直磁気記録媒体の
製造方法。
(2) By depositing iron/cobalt vapor onto a heated nonmagnetic substrate from a direction perpendicular to the upper surface of the substrate, and at the same time irradiating the vapor deposition area with nitrogen plasma containing nitrogen ions and electrons, the substrate is heated. 1. A method of manufacturing a perpendicular magnetic recording medium, which comprises depositing an FeCo--N magnetic thin film thereon.
JP8010390A 1989-08-10 1990-03-28 Perpendicular magnetic recording medium and its production Pending JPH03280214A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP8010390A JPH03280214A (en) 1990-03-28 1990-03-28 Perpendicular magnetic recording medium and its production
US07/564,256 US5173370A (en) 1989-08-10 1990-08-08 Magnetic recording medium having a magnetic thin film with both paramagnetic phase and ferromagnetic phase iron nitride with paramagnetic phase zeta Fe2 N as its largest component
EP90115388A EP0415155B1 (en) 1989-08-10 1990-08-10 A perpendicular magnetic recording medium and method of forming the same
DE69023835T DE69023835T2 (en) 1989-08-10 1990-08-10 Vertical magnetic recording medium and method for the production thereof.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8010390A JPH03280214A (en) 1990-03-28 1990-03-28 Perpendicular magnetic recording medium and its production

Publications (1)

Publication Number Publication Date
JPH03280214A true JPH03280214A (en) 1991-12-11

Family

ID=13708849

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8010390A Pending JPH03280214A (en) 1989-08-10 1990-03-28 Perpendicular magnetic recording medium and its production

Country Status (1)

Country Link
JP (1) JPH03280214A (en)

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