JPH03280331A - Method and device for high voltage processing of cathode-ray tube - Google Patents

Abstract

PURPOSE:To maintain the surface creep discharge start voltage stably by giving at least a stem pin part of No.3 grid a temp. higher than the temp. of the high pressure gas atmosphere, and making its dew point below 25 deg.C. CONSTITUTION:The neck 1 of a CRT 20 after completion of the air exhausting process is put in a heating furnace 23, and electricity is supplied to the heat emitter body 24 to perform heating. Therein the atmospheric temp. inside of the furnace 23 is set to 160 deg.C, and the neck 1 of the CRT 20 is exposed for five min in this high temp. atmosphere to raise the surface temp. of the neck 1 to 90 deg.C approximately. The base of the CRT 20 and a socket 33 to be connected with its stem pin are held in a high pressure gas atmosphere at 25 deg.C or below. Therefore, dewing will not be generated easily, and the surface-creep discharge starting voltage can be maintained stably.

Description

[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a high voltage processing method and apparatus for a cathode ray tube, which is performed to improve the withstand voltage characteristics of a cathode ray tube by applying a high voltage from a stem pin. It is related to.

[Conventional technology] FIG. 13 is a sectional view of the neck portion of the cathode ray tube.

In the figure, (1) is the neck of the cathode ray tube (20),
Its free end is closed by the sudem part (2), and this neck part (
An electron gun (quantity 0) is housed inside 1). This electron gun (lO) is connected to the heater (■) from the stem (2) side.
, cathode (12), first grid (13), second grid (14), third grid (+5), fourth grid (
+6) and are held at predetermined intervals by beet glass (+7) having insulating properties.

If the cathode ray tube is, for example, a 29-inch color cathode ray tube, from an external anode button (not shown) during operation,
28K is applied to the fourth grid (16) of the electron gun (10) through the internal conductive film (3) of the cathode ray tube and the spacer (18).
A high voltage of V is applied.

On the other hand, 6.7 KV of crystal type JF is applied to the third grid (15) through a socket (not shown), the stem pin (4a) of the first grid (15), and the inner lead (19). , about 700v to the second grid (14), about ! to the cathode (12)! A voltage of 50V and a voltage of normal Ov are applied to the first grid (13), respectively.

Under such operating conditions of the cathode LA tube, a potential difference of about 6 KV occurs between the electrodes of the third grid (15) and the second grid (14), and the third grid of the second grid (14)
If there are burrs or spots on the surface of the opposing part of the grid (15) during electrode molding or during the manufacturing process of the electron gun (10), or if there is dust etc. inside the tube of the cathode ray tube. If it adheres, unnecessary electron emission called stray emission is caused.

These unnecessary electrons are irradiated onto the fluorescent screen of the cathode ray tube through the fourth grid (16), causing the fluorescent screen to emit unnecessary light.
This unnecessary light emission causes the fluorescent light to emit light even when the screen is dark, and is a factor in degrading the quality of the image.

In order to eliminate such unnecessary E emission from the second grid (14), a cathode ray tube (
20), a voltage of 4 to 5 times the operating voltage, that is, 30
High voltage 11: where a high voltage of about KV is applied, processing is performed. When this high-voltage treatment is applied, an electric discharge occurs between the second grid (+4) and the third grid (15), and unnecessary particles, burrs, dirt, etc. are removed from the second grid (14). Electron radiation is suppressed.

However, as shown in Figure 15, the third grid (15)
Stem pins (4b) such as the second grid (14) and the cathode (12) are arranged around the stem pin (4a) at small intervals.
When five high voltages are applied to the third grid (15),
Since discharge occurred between the stem pins (4a) and (4b) due to creeping discharge, satisfactory high voltage processing could not be performed.

FIG. 16 is an enlarged perspective view showing the configuration of a silo-type base conventionally used to prevent such creeping discharge.
A silo type base (30) surrounded by a silo 130a) is bonded with silicone rubber (31). FIG. 17 is a perspective view of a socket (32) that fits into the silo base (30) of FIG. 16 to apply electricity J'E from an external power source to the cathode ray tube.

Silo type base (30) and socket (32) like this
When using the stem pin (4a) of the third grid (15)
) and other stem pins (4b), but even with this, high voltage processing of 4 to 5 times the operating voltage could not be sufficiently performed.

In addition, as a high voltage processing method for solving such problems, for example, as disclosed in Japanese Patent Laid-Open No. 54-101255, at least the stem portion (2) of the cathode ray tube (20) is heated with high pressure gas. A method has been proposed in which a high voltage is applied at t' in an atmosphere.

As shown in FIG. 18, this high-voltage processing method involves housing the stem portion (2) of a cathode ray tube (20) in a closed container (21), and applying high-pressure gas into the closed container (2I) from the outside. G
The starting voltage of the creeping discharge on the stem pin (4al, (4b) side) is increased by feeding the stem pin (4al, (4b)),
According to this method, the conventional 23 KV culm
(The creeping discharge starting voltage can be improved to about 40 KV.

[Problems to be Solved by the Invention] Even in the high-voltage processing method for cathode ray tubes in a high-pressure gas atmosphere as described above, the creeping discharge inception voltage is not necessarily stable in a production line that produces a large number of cathode ray tubes every day. Sometimes creeping discharge may occur on the stem pin side, in this case.

Since a satisfactory discharge does not occur between the electrodes of the second grid and the third grid, there is a problem that the quality of withstand voltage characteristics is not stable, and furthermore, the socket is damaged by the energy of the discharge.

This invention has been made to solve the problems mentioned in -F, and its first object is to provide a high voltage processing method for cathode ray tubes that can maintain a stable creeping discharge inception voltage.

Another object of the present invention is to obtain an apparatus that can safely and efficiently carry out high-voltage processing in a high-pressure gas atmosphere.

[Means for Solving the Problems] A high voltage processing method for a cathode ray tube according to the invention of claim 1 maintains the base portion of the cathode ray tube and the socket connected to its stem pin in a high pressure gas atmosphere, and at least the third grid. The high voltage processing method for a cathode ray tube according to the invention of claim 2 is characterized in that the temperature of the stem pin portion of the cathode ray tube is made higher than the temperature of the surrounding high pressure gas atmosphere. This device is characterized in that the socket connected to the stem pin is maintained in a high-pressure gas atmosphere with a dew point of 25° C. or lower.

The high-voltage processing device n according to the invention of claim 3 includes a container configured to supply high-pressure gas into the interior and having a socket attached to the bottom surface, and a container that holds the container and is used to hold the tube of a cathode ray tube. An advancing and retreating device that advances and retreats in the axial direction and an opening [-
It has a hollow annular sealing member made of an elastic material disposed on the inner peripheral surface of one end, and when compressed air is supplied into the sealing member, it expands and closes the neck of the cathode ray tube. A seal 11- that airtightly seals between the outer peripheral surface of the container and the open end of the container.
The high voltage processing device according to the invention according to claim 4 is characterized in that the high voltage processing device is configured such that high pressure gas is supplied inside the device, and a socket equipped with a pressure contact terminal is disposed on the bottom surface. The present invention is characterized in that it includes a container that holds the container, an advancing and retracting device that holds the container and moves it forward and backward in the tube axis direction, and (1) a sealing member made of an elastic material and disposed on the open end surface of the container.

[To 4; 1 amount 1] According to the invention of claim 1, high voltage treatment is performed 11; 1
In addition, the stem pin of the cathode ray tube was heated to a temperature higher than that of the surrounding high-pressure gas atmosphere, so the saturated vapor pressure on the peripheral surface of the stem pin increased by 1", resulting in dew condensation. Therefore, a stable creeping discharge initiation voltage YF can be maintained.

According to the invention of claim 2, since the dew point of the high temperature gas fed into the container is set to 25 degrees Celsius or lower, dew condensation can be prevented and a stable creeping discharge initiation type can be maintained. I can do it.

According to the invention of claim 3, a container having a socket disposed on the bottom surface is advanced in the tube axis direction of the cathode ray tube using an advancing/retracting device to cover the neck portion and connect the socket to each stem pin, so that the container is Compressed air is supplied into a hollow annular sealing member disposed on the inner circumferential surface of the opening end to inflate it and airtightly seal the space between it and the neck, and then high pressure gas is supplied into the container. Then, a high voltage is applied through the socket to perform high voltage processing, and then, after removing compressed air from inside the sealing member, the container is moved back and removed using the advance/retreat device, and the high voltage is applied. The processing operation ends.

According to the invention of claim 4, the container is advanced by the forwarding/retracting device to cover the neck portion, and the container is opened [after the sealing member disposed on the first end surface is crimped to the funnel portion to airtightly seal the container. , high-pressure gas is supplied into the container, high voltage is applied from the socket through the pressure contact terminal to perform high-voltage treatment, and then, after the high-pressure gas in the container is discharged, the container is moved back by the advancing/retracting device. The high voltage processing operation is completed by attaching and detaching the capacitor.

[Embodiment of the Invention] Hereinafter, an embodiment of the present invention will be described based on the drawings.

Figure 1 is a claim! 1f3Vfi according to an embodiment of the invention of
FIG. 3 is an explanatory diagram of a high voltage processing method for wire tubes. In the same figure,
(20) is a cathode ray tube, (33) is a cathode ray tube (
(21) is the neck part (1) of the cathode ray tube (20);
(22) is a closed container that is sealed in a high-pressure gas atmosphere.
T = compressor that produces compressed air (231 is a heating furnace).

(24) is a heating element installed in this heating furnace (23).

Next, the high voltage processing procedure of this example will be explained.

The cathode ray tube (20) after the evacuation process of the cathode ray tube (20) has been completed.
) is placed in a heating furnace (23) as shown in FIG. 1(a), and the heating element (24) is energized to heat it. Here, the atmospheric temperature in the heating furnace (23) is set to 160°C, and the cathode ray tube (20) is placed in this high temperature atmosphere for 5 minutes.
By exposing the neck portion (1) of 29 mm in diameter, the surface temperature of the neck portion (1) having a diameter of 29 mm is raised to approximately 90°C.

Next, as shown in FIG. 1(b), the neck part (+1) is placed in a closed container (+) and subjected to high voltage treatment in a high pressure gas atmosphere. Compressed air is sent into the closed container (21) to create a high pressure gas atmosphere of approximately 2 atmospheres.Secondly, by the same method as before, insert the stem pin (4a) of the third grid.
) and remove the third grid (stem pin (4b) of other electrode
A high-voltage DC voltage of about 30 KV is applied for about 5 minutes between the two.

When high voltage processing is performed as described above, 1. For example, when the outside air temperature is 40°C and the relative humidity is 95%, the humidity inside the sealed container (2+) exceeds I(10χ,
1) The temperature of the neck part i11 is much higher than the temperature of the atmosphere inside the sealed container (21), although this will cause dew condensation inside and on the surface of the cathode ray tube (20).
℃, the saturated vapor pressure near this neck part (1) is about 9%, as shown in the saturated vapor pressure curve in Figure 2, and vP: closed. container(
21) Even if the atmospheric pressure inside is 2 atm, the relative humidity is 100
% or less, so no dew condensation phenomenon occurs.

FIG. 3 is an explanatory diagram showing a schematic embodiment of a high voltage processing apparatus used to carry out the high voltage processing method for cathode ray tubes according to the invention of claim 1. In the same figure,
(33) is a socket, (34) is this socket (33)
), the heating unit (+35) is attached to this heating unit (34
), (IIV) is the heating element disposed in the socket (3
3) is a high LL power supply for sending a high voltage to the electrode of the single-unit gun, and (40) is a heating power supply for heating the heating element (35).

Next, the operation of this embodiment will be explained.

A current is constantly passed through the heating element (35) of the heating section (34) attached to the socket (33) to maintain the temperature inside the heating section (34) at approximately 160°C. Next, put an airtight container (2
1) Insert the neck part (1) of the cathode ray tube (20) into the tube, and insert the socket (33) into the stem pin (4a) of the cathode ray tube (2o).
), insert in (4b). If you leave it in this state for 5 minutes, the temperature of the neck (1) will be about 90"
C to y? Warm up. Then, the inside of the closed container (21) is made into a high-pressure gas atmosphere of about 2 atmospheres. As mentioned above, creating high pressure inside the airtight container (21) makes it easier to remove condensation, but
Since this device is equipped with J-4, which is a means for heating the neck (1), the saturated water vapor pressure near the neck (eye) increases, and the socket (33
), it is possible to maintain a stable creeping discharge inception voltage.

In addition, in the -L period example, a configuration was shown in which the neck part (ri) is heated by the heating part (34) before the inside of the closed container (21) is placed in a high-pressure gas atmosphere, but the present invention is not limited to this. do not have.

FIG. 4 is a diagram showing another embodiment of the invention of claim 1, and in the figure (in al, +41) is a heater heating power source for the electron gun, which maintains the neck part (1) in a high-pressure gas atmosphere. Before applying voltage to the electron gun heater. For example, the diameter of the neck part (1) is 29 mm and the heater rating is 6.3V.
- In the case of a 680mA cathode ray tube, 8V is applied to the electron gun heater.
When this voltage is applied for about 5 minutes, the temperature of the surface of the neck (1) rises to about 90°C. Therefore, the saturated vapor pressure reaches a peak, and no dew condensation occurs during the high-voltage treatment in the high-pressure gas atmosphere shown in FIG. 4(b).

In addition, in one or more embodiments, a method has been shown in which the neck portion (1) is preheated until just before being held in a high pressure gas atmosphere, but the temperature of the neck portion (1) gradually increases during high voltage treatment. If high voltage processing is performed for a long period of time, dew condensation may gradually appear. For example, if a material that has been preheated to 90°C is left in an atmosphere of 25°C and 2 atmospheres, the surface temperature of the neck portion (1) will drop to 35°C.

FIG. 5 is a diagram showing another embodiment made to solve such a problem with fL, in which the heater of the electron gun is energized from the heating power source (41) even during high voltage processing, and the cathode ray tube ( The neck portion (1) of 20) is heated to maintain creeping discharge starting voltage.

Furthermore, FIG. 6 is a diagram showing another embodiment of the invention according to claim 1, in which a heating section (34) is disposed inside a closed container (21).

Note that instead of the heating element (35) such as a nichrome wire, a radiant heating method using an infrared lamp or the like may be used.

Furthermore, although compressed air is used as the high-pressure gas in the above embodiments, it is not limited to air, and other gases 1, such as nonflammable gases such as nitrogen, may also be used.

Furthermore, if the high-pressure gas is dehumidified before introducing it into the container, the dew point will also be lowered, making it possible to lower the S7 temperature at the neck.

FIG. 7 is a diagram for explaining a high voltage processing method for a cathode ray tube according to this method. In the figure, (25) is a dryer that dries compressed air, (26) is a dew point meter that measures the dew point of the compressed air that has passed through the dryer (25), (27)
a), 127b) is halfthial.

Next, the operation will be explained.The 6-combrethser (22) generates high-pressure air of approximately 2 atmospheres, and water vapor is removed through the dryer (25) filled with molecular sieve or the like. The compressed air dehumidified by the dryer (25) is passed through the valve (
27b) to a dew point meter 126), and its dew point is measured. The dew point is fixed at 1111 at atmospheric pressure. Dew point meter (
The compressed air whose dew point has been confirmed to be 25°C or less by 26) is sent to the closed container (2
1) After the inside of the sealed container (21) reaches Takami J, f, a high voltage DC voltage of about 30 V is applied between the third grid and the other electrodes except for the third grid using the same method as before. is applied for about 5 minutes. At this time, since the socket part is in a high-11 gas atmosphere without condensation, the creeping discharge inception voltage becomes 35 KV or more. As a result, a discharge occurs between the third grid and the second grid of the electron gun, and the second grid 9
As a result, unnecessary electron emission from the second grid is suppressed and a cathode ray tube with good withstand voltage characteristics is obtained.

Next, high 71: The reason why the dew point of the gas atmosphere was set to 25° C. or lower will be explained.

The inventors confirmed that the tendency for the creeping discharge starting voltage to decrease at the Sudembin section on the mass production line is concentrated especially during the rainy season when the temperature is high and humidity, and the inventors have confirmed that the tendency for the creeping discharge starting voltage to decrease in the Sudembin section on the mass production line is concentrated especially during the rainy season when the temperature is high and humid. We have found that this is extremely effective.

FIG. 8 is a diagram showing an experimental apparatus for experimentally verifying the relationship between dew point and creeping discharge firing voltage.

In the figure, (28) is a humidifier, (29) is a humidifier (
This heater (28) controls the degree of humidification, and the dew point can be freely set by changing the temperature of the high-pressure gas using the heater (28).

FIG. 9 shows the results of investigating the relationship between the dew point and creeping discharge starting voltage at the stem pin using such an experimental device. As is clear from this figure, when the room temperature is 40°C and the air pressure inside the sealed container (2I) is 2 atm, the dew point is 30°C.
In this case, the creeping discharge starting voltage deteriorates to about 18 KV, but when the dew point becomes 25°C or less, the creeping starting voltage increases, and when the dew point becomes 20°C or less, the creeping starting voltage decreases to about 4 KV.
The culm degree stabilizes at 0KV.

Further, when the air pressure inside the closed container (21) was set to 4 atm, it was effective when the dew point was 15° C. or lower.

Furthermore, when the room temperature is about 20°C, such as in winter, it is necessary to lower the dew point to 10°C or lower. In addition, airtight containers (
21) The atmospheric pressure inside! , 3 atm, no improvement in creeping discharge inception voltage was observed even if the dew point was lowered.

FIG. 10 is a diagram showing an embodiment according to the invention of claim 3,
This relates to a mechanism for attaching and detaching an airtight container that accommodates the neck portion of a cathode ray tube.

In the figure, (501 is a container attaching/detaching device), which includes an advancing/retracting device (51) that is driven to advance and retreat in the direction of the arrow by a drive device G (not shown);
A container (21al) with one side open attached to the arm (51al), a socket (33) attached to the bottom of the container (21a), and an inner peripheral surface of the open FI end of the container (21a). The sealing device (52) includes a holding member (53) having an open inner peripheral surface and a holding member (53) housed within the holding member (53). It consists of a hollow annular seal 11 member (54) made of an elastic material such as rubber, and an air supply pipe (55) that communicates with the seal member (54) to supply compressed air. ing.

Next, the operation will be explained. When performing high voltage processing, the container (21al) is inserted into the neck of the cathode ray tube (21al) without compressed air being supplied into the sealing member (53).
Connect the socket (33) to the stem pin. At this time,
Since the seal 1L and the member (54) are in a contracted state, they can be easily inserted. Then, pass through the air pipe (55)! 4. Supply compressed air into the IT member (54) to inflate it, and then put the neck part (++ and the sealing member (54) in close contact with each other to airtightly seal it) -L, and then put it into the container (21a). Introduce high pressure gas. At this time, it is desirable that the air pressure within the sealing member (54) be lower than the high pressure gas pressure within the container (21a).

Further, at this time, in order to prevent the container (21al) from coming off from the bent portion (1), it is pressed against the cathode ray tube side using the advancing/retracting device (51).

With F in this state, a voltage L [4 to 5 times the operating voltage of the P3 tube] is applied between the third grid (15) and the second grid (14) from the outside through the socket (33). The second grid (14) is then subjected to high pressure treatment to remove any burrs or particles attached to it. Thereafter, the compressed air in the seal member (54) is discharged to reduce the size, and the advancing/retracting device (51) is moved back to detach the container (21a) from the cathode ray tube (20).

According to this embodiment, the container (2l al is the socket (
33) Since it is only necessary to wrap part of the sudem part (2) and neck part +11, it is possible to downsize the container, and therefore, the pressure applied to the entire container (21a) is also reduced, so the danger of explosion etc. is also reduced.

Further, the sealing member (54) is sealed by supplying and discharging compressed air into the sealing member (54). - Since it can be released, the container (21a) can be easily attached and detached, improving work efficiency.

Note that the sealed container (52) may be configured to be sealed using a magnet, for example.

In this case, since the neck portion (1) approaches the ground potential, there is a great risk that dielectric breakdown of the neck glass will occur during the processing of crystal form J1. But like this example.

lI: If compressed air is used, this will not occur and a highly safe device will be obtained.

FIG. 1+ is a diagram showing an embodiment of the container attaching/detaching mechanism of the high-pressure processing apparatus according to the invention of claim 4, and FIG. 12 is a diagram showing the structure of the socket of this embodiment.

In the figure, (56) is a member of the seal 11 made of an elastic material such as rubber, which is attached to the opening [1 end face of the container (21a), and is moved to the funnel part of the cathode ray tube (20) by the advancing/retracting device (50). 5) to airtightly seal the inside of the container (21a). (33a) is the base (
2), +33b) is attached to the container (
The second socket is attached to the bottom of the container (21a) and is equipped with a pressure contact terminal (33c).
) is pressed by the advancing/retracting device ff+50+ to seal the space between it and the funnel part (51), the opposing press-contact terminals (33c) are electrically connected and powered from an external power source. has been done.

Next, the operation will be explained. The neck part (
At +1, the container (21al) is advanced and retracted vi (51) is moved forward to accommodate the neck portion (1) and its seal IF.

At the same time that the member (56) is pressed against the funnel portion (5) and hermetically sealed, the pressure contact terminals (33c) of the first socket (33a) and the second socket (33b) are connected.

Next, after high-pressure gas is fed into the container (21a) to reach a predetermined pressure, a cathode ray is placed between the third grid (15) and the second grid (14) via the first socket (33b). A voltage of 4 to 5 IT, which is the operating voltage of the tube, is applied to perform high-voltage treatment to remove burrs and debris attached to the second grid (14), and then the high-pressure gas in the container (21st) is discharged. The advancing/retracting device (50) is moved back and the cathode ray tube (
20) to the container (2l a).

According to this embodiment, although it is necessary to attach the first socket (33al) to the cathode ray tube (2G) in advance, the neck portion t
Since the container (21a) can be attached and detached from +> in one motion,
A high-pressure processing device with good workability can be obtained.

[Effects of the Invention] According to the invention as claimed in claim 1, when high voltage processing is performed in a high pressure gas atmosphere, the temperature of the base portion of the cathode ray tube and the socket to which the stem pin is connected is adjusted to the temperature of the high pressure gas atmosphere. By making the discharge voltage higher than 100, it is possible to extremely suppress the drop in the creeping discharge inception voltage inside the cylinder, and as a result, it is possible to obtain a cathode ray tube with extremely stable quality.
Furthermore, damage to the socket can be prevented and productivity can be improved.

According to the invention of claim 2, the dew point of the high pressure gas atmosphere is 25
Since the temperature is set to be below .degree. C., the same effect as the invention of claim 1 can be obtained.

According to the invention of claim 3, a socket is attached to the bottom surface of the container which is open on the - side, and the container is held by the advancing/retracting device and advanced so as to cover the neck of the cathode ray tube. -1- Connect the socket and the opening of the container [5-1 +L member held on the inner circumferential surface of the first end]. After that, high-pressure gas is supplied into the container, high voltage is applied from the outside to perform high-voltage treatment, and then the compressed air inside the sealing member is discharged. Since the container is deleaded by moving the advancing/retracting device back and forth after breaking the seal W, the high voltage processing device can be efficiently attached and detached from the neck portion of the cathode ray tube.

According to the invention of claim 4, a sealing member is provided at the open end of the container, and the neck portion is accommodated in the container by the advancing/retracting device, and the sealing member is pressed against the funnel portion to seal airtightly. At the same time, however, the stem pin and the external power source are connected to each other by means of a socket equipped with an 1E pressure contact terminal, so that the device is advantageous.

[Brief explanation of the drawing]

FIG. 1 is a conceptual diagram for explaining the crystal type L1: treatment method of a cathode ray tube according to an embodiment of the invention of claim 1, FIG. 2 is a saturated vapor pressure characteristic diagram of water, and FIG. FIGS. 4 and 5 are partially enlarged sectional views showing an example of the overall construction of a high voltage processing device for cathode ray tubes according to the invention of Claim 1, and FIGS. A conceptual diagram for explaining the high voltage processing method, FIG. 6 is an explanatory diagram showing another configuration example of the high voltage processing device Ff for a cathode ray tube according to the invention of claim 1, and FIG. FIG. 8 is a conceptual diagram for explaining a high voltage processing device for polar ray tubes according to one embodiment. FIG. 8 is a conceptual diagram of an experimental device for determining the relationship between dew point and creeping discharge starting voltage. FIG. A graph showing the relationship with the creeping discharge initiation type 1F, and FIG. 10 is a sectional view showing an embodiment of the attachment/detachment mechanism of the airtight container to the cathode ray tube of the processing apparatus of the cathode ray tube according to the invention of claim 3. FIG. 11 shows pr, ql-11MMmbby+-bM! in the invention of claim 4. lt-
+=--b--1:t:i+-^WI#%&lj is a perspective view showing the structure of the socket of this embodiment, FIG. 13 is a sectional view of the neck of the color cathode ray tube, and FIG. 14 is a high An explanatory diagram of a voltage processing method, FIG. 15 is a diagram showing the arrangement of stem pins of a color cathode ray tube, FIG. 16 is an enlarged perspective view showing the structure of a silo type base, FIG. 17 is an enlarged perspective view of its socket,
FIG. 18 is an explanatory diagram of a conventional high voltage processing method. (1) - Neck part, (4a) 3rd grid stem pin, (4b) Other stem pins,
(6) --- Funnel part, (20) --- Cathode ray tube, (2nd eye -- Sealed container. (21a) --- Container, (22) --- Compressor,
(231, (34)...Heating furnace, (25)...
Dryer, (33), (33a), (33b)-socket, (33c)...press contact terminal, (40)--heating power source. (41)--Heater heating power source, (50)...Airtight container attachment/detachment device, (51)...Advancing/retracting device, (52)...
・Sealing 'A' placement, (53) - Holding member, (54)
, (56)...Sealing member, (551-...Air pipe. In each figure, the same reference numerals indicate the same or corresponding parts.

Claims (4)

[Claims] (1) With the neck section of the electron gun, including the stem section, held in a high-pressure gas atmosphere, a voltage sufficiently higher than the operating voltage is applied between the stem pin of the third grid of the electron gun and the other stem pins. A high voltage processing method for a cathode ray tube in which a voltage is applied, characterized in that the temperature of at least the stem pin portion of the third grid is made higher than the temperature of the high pressure gas atmosphere. (2) A high voltage sufficiently higher than the operating voltage is applied between the stem pin of the third grid of the electron gun and the other stem pins while the neck portion including the stem portion of the electron gun is held in a high-pressure gas atmosphere. A high voltage processing method for a cathode ray tube, characterized in that the dew point of the high pressure gas atmosphere is set to 25° C. or lower. (3) A device for performing high voltage processing according to claim 1 or claim 2, which is configured such that one side is open so that high pressure gas is supplied to the inside, and a socket is attached to the bottom surface. a container, an advancing and retracting device that holds the container and moves it forward and backward in the tube axis direction of the cathode ray tube, and a hollow annular sealing member made of an elastic material disposed on the inner peripheral surface of the open end of the container. a sealing device that expands when compressed air is supplied into the sealing member to airtightly seal between the outer peripheral surface of the neck portion of the cathode ray tube and the open end of the container; A high voltage processing device for cathode ray tubes, characterized by comprising: (4) A device for performing high voltage processing according to claim 1 or claim 2, which is configured such that one side is open so that high pressure gas is supplied inside, and has a pressure contact terminal on the bottom surface. The above-mentioned method comprises a container in which a socket is attached, a sealing member made of an elastic material attached to an open end of the container, and an advancing/retracting device for holding the container and moving it forward and backward in the tube axis direction of the cathode ray tube. The advancing/retracting device advances the container to accommodate the neck portion of the cathode ray tube, and presses the sealing member against the outer surface of the funnel portion to airtightly seal the container. A high voltage processing device for a cathode ray tube, characterized by having a configuration in which a stem pin and an external power source are electrically connected.