JPH03280520A - Manufacture of organic semiconductor solid electrolytic capacitor - Google Patents
Manufacture of organic semiconductor solid electrolytic capacitorInfo
- Publication number
- JPH03280520A JPH03280520A JP8250290A JP8250290A JPH03280520A JP H03280520 A JPH03280520 A JP H03280520A JP 8250290 A JP8250290 A JP 8250290A JP 8250290 A JP8250290 A JP 8250290A JP H03280520 A JPH03280520 A JP H03280520A
- Authority
- JP
- Japan
- Prior art keywords
- value
- capacitor
- molecule
- tcnq salt
- salt
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000003990 capacitor Substances 0.000 title claims abstract description 49
- 239000004065 semiconductor Substances 0.000 title claims description 15
- 239000007787 solid Substances 0.000 title claims description 15
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- NLZUEZXRPGMBCV-UHFFFAOYSA-N Butylhydroxytoluene Chemical class CC1=CC(C(C)(C)C)=C(O)C(C(C)(C)C)=C1 NLZUEZXRPGMBCV-UHFFFAOYSA-N 0.000 claims abstract description 37
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 27
- 239000011888 foil Substances 0.000 claims abstract description 22
- 239000002904 solvent Substances 0.000 claims abstract description 15
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 claims abstract description 12
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 claims abstract description 12
- 238000000034 method Methods 0.000 claims abstract description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 11
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims description 9
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 claims description 9
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 7
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 claims description 6
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 6
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 claims description 6
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 claims description 5
- 239000003792 electrolyte Substances 0.000 claims description 4
- 238000001816 cooling Methods 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 claims 2
- 239000002184 metal Substances 0.000 claims 2
- 229910052758 niobium Inorganic materials 0.000 claims 1
- 239000010955 niobium Substances 0.000 claims 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims 1
- 229910052715 tantalum Inorganic materials 0.000 claims 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 1
- 238000004804 winding Methods 0.000 claims 1
- 239000007788 liquid Substances 0.000 abstract description 9
- 239000000126 substance Substances 0.000 abstract description 7
- 150000003839 salts Chemical class 0.000 abstract description 6
- 229920005989 resin Polymers 0.000 abstract description 5
- 239000011347 resin Substances 0.000 abstract description 5
- 238000005530 etching Methods 0.000 abstract description 3
- 230000015572 biosynthetic process Effects 0.000 abstract description 2
- 238000002347 injection Methods 0.000 abstract description 2
- 239000007924 injection Substances 0.000 abstract description 2
- 239000000843 powder Substances 0.000 abstract description 2
- 230000008034 disappearance Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 7
- 238000005470 impregnation Methods 0.000 description 4
- 230000032683 aging Effects 0.000 description 3
- 150000001768 cations Chemical class 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 3
- FLDCSPABIQBYKP-UHFFFAOYSA-N 5-chloro-1,2-dimethylbenzimidazole Chemical compound ClC1=CC=C2N(C)C(C)=NC2=C1 FLDCSPABIQBYKP-UHFFFAOYSA-N 0.000 description 2
- 239000001741 Ammonium adipate Substances 0.000 description 2
- 235000019293 ammonium adipate Nutrition 0.000 description 2
- 238000007739 conversion coating Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000035882 stress Effects 0.000 description 2
- -1 1-furopanol Chemical compound 0.000 description 1
- QIPOHFUODFGVHI-UHFFFAOYSA-N 2-butylisoquinolin-2-ium Chemical compound C1=CC=CC2=C[N+](CCCC)=CC=C21 QIPOHFUODFGVHI-UHFFFAOYSA-N 0.000 description 1
- 125000000094 2-phenylethyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])C([H])([H])* 0.000 description 1
- 238000005411 Van der Waals force Methods 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 239000008151 electrolyte solution Substances 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- AWJUIBRHMBBTKR-UHFFFAOYSA-N iso-quinoline Natural products C1=NC=CC2=CC=CC=C21 AWJUIBRHMBBTKR-UHFFFAOYSA-N 0.000 description 1
- 150000002537 isoquinolines Chemical group 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000007784 solid electrolyte Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Landscapes
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Abstract
Description
【発明の詳細な説明】
(イ)産業上の利用分野
本発明は有機半導体固体電解コンデンサの製造方法に関
するものである。更に詳説すると、本発明は電解質とし
てTCNQ錯塩を使用する有機半導体固体電解コンデン
サにおける等個直列抵抗や漏れ電流を抑制できるコンデ
ンサの製造方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION (a) Field of Industrial Application The present invention relates to a method for manufacturing an organic semiconductor solid electrolytic capacitor. More specifically, the present invention relates to a method for manufacturing a capacitor that can suppress equal series resistance and leakage current in an organic semiconductor solid electrolytic capacitor using a TCNQ complex salt as an electrolyte.
(ロ)従来の技術
電解質としてTCNQ錯塩を使用する有機半導体固体電
解コンデンサに関しては、本願出願人より既に種々提案
している。即ち、特開昭58−191414号(HOI
G9102)等に開示されているN位をアルキル基で
置換したイソキノリンとのTCNQ錯塩を用いた固体電
解コンデンサは、特に優れた高周波特性をもっているた
め、スイッチング電源用などに広く採用されている。(b) Prior Art Regarding organic semiconductor solid electrolytic capacitors using TCNQ complex salt as an electrolyte, various proposals have already been made by the applicant of the present application. That is, JP-A-58-191414 (HOI
A solid electrolytic capacitor using a TCNQ complex salt with an isoquinoline substituted with an alkyl group at the N-position, which is disclosed in Japanese Patent Application No. G9102), has particularly excellent high frequency characteristics and is therefore widely used in switching power supplies.
次にコンデンサ素子について説明する。第1図は従来お
よび本発明に使用されているコンデンサ素子を示す。ま
ず、高純度(99,99%以上)のアルミニウム箔を化
学的処理により粗面化し、実効表面積を増加させるため
のいわゆるエツチング処理を行なう。次に電解液中にて
、電気化学的にアルミニウム箔表面に酸化皮膜(酸化ア
ルミニウムの薄膜)を形成する(化成処理)。次にエツ
チング処理、化成処理を行なったアルミニウム箔を陽極
箔(1)とし、対向陰極箔(2)との間にセパレータ(
3)としてマニラ紙を挟み、第1図に示すように円筒状
に巻き取る。こうしてアルミニウム箔に酸化皮膜を形成
した陽極箔(1)及び陰極箔(2)と両電極箔間に介挿
されたセパレータ(3)とを持回してコンデンサ素子(
6)が形成される。なお(4)(4’)はアルミリード
、(5)(5’)はリード線である。Next, the capacitor element will be explained. FIG. 1 shows capacitor elements used conventionally and in the present invention. First, a high purity (99.99% or higher) aluminum foil is chemically treated to roughen its surface and subjected to a so-called etching process to increase its effective surface area. Next, an oxide film (thin film of aluminum oxide) is electrochemically formed on the surface of the aluminum foil in an electrolytic solution (chemical conversion treatment). Next, the etched and chemically treated aluminum foil is used as an anode foil (1), and a separator (
3) Sandwich the manila paper and roll it up into a cylindrical shape as shown in Figure 1. The capacitor element (
6) is formed. Note that (4) and (4') are aluminum leads, and (5) and (5') are lead wires.
さらにコンデンサ素子(6)に熱処理を施し、セパレー
タ(3)を構成するマニラ紙を炭化して繊維の細径化に
よる密度の低下を計る。Further, the capacitor element (6) is subjected to heat treatment, and the manila paper forming the separator (3) is carbonized to reduce the density by reducing the diameter of the fibers.
第2図はこのコンデンサ素子(6)をアルミケース(7
)内に収納した状態の断面図である。即ち、所定量のT
CNQCN上8)をケース(7)内に入れ、加熱した熱
板上にアルミケース(7)を載置し、本実施例では31
0〜315℃にてケース(7)中の粉末状TCNQ錯塩
を加熱融解させる。Figure 2 shows this capacitor element (6) in an aluminum case (7).
) FIG. That is, a predetermined amount of T
Put the CNQCN upper 8) into the case (7) and place the aluminum case (7) on the heated hot plate.
The powdered TCNQ complex salt in case (7) is heated and melted at 0 to 315°C.
一方、予め加熱しであるコンデンサ素子(6)をアルミ
ケース(7)内に挿入して、融解したTCNQCN上混
合液をコンデンサ素子(6)に含浸させ、すぐに冷却固
化させる。その後、TCNQCN上は反応し難い樹脂(
9)を封入し、さらにエポキシ樹脂等(10)で成形す
る。前述の如き従来技術においては化成したエツチドア
ルミニウム箔(1)と陰極箔(2)をセパレータ(3)
を介して巻回したコンデンサ素子(6)を素子形成時に
損傷した陽極箔の化成皮膜修復のため再度アジピン酸ア
ンモニウムの水溶液にて再化成並びに熱処理していた。On the other hand, the preheated capacitor element (6) is inserted into the aluminum case (7), and the capacitor element (6) is impregnated with the molten TCNQCN mixture, which is immediately cooled and solidified. After that, a resin that is difficult to react on TCNQCN (
9) is sealed and further molded with epoxy resin or the like (10). In the prior art as described above, a chemically etched aluminum foil (1) and a cathode foil (2) are separated by a separator (3).
The capacitor element (6) wound through the capacitor element (6) was re-formed and heat-treated with an aqueous solution of ammonium adipate to repair the chemical conversion film on the anode foil that was damaged during element formation.
そして該コンデンサ素子に融解液化したTCNQ塩(8
)を含浸し、樹脂(9)又はゴムで封口した後、コンデ
ンサの陽極リード線(5)と陰極リード線(5′)間に
正の定格直流電圧(順方向)を印加する工程を経て目的
とする有機半導体固体電解コンデンサを完成させていた
。Then, melted and liquefied TCNQ salt (8
) and sealed with resin (9) or rubber, and then goes through the process of applying a positive rated DC voltage (forward direction) between the anode lead wire (5) and cathode lead wire (5') of the capacitor. He had completed an organic semiconductor solid electrolytic capacitor.
しかし、有機半導体固体電解コンデンサは一般の電解液
を用いたコンデンサに比べ酸化皮膜の修復性が若干弱く
、アジピン酸アンモニウムの再度の化成により形成させ
た皮膜においてもTCNQ塩含浸時の機械的ストレス、
熱的ストレス或いは化学的なストレスにより化成皮膜に
は弱体部が存在することになる。これらの要因により化
成皮膜の弱体部が破壊し、等価直列抵抗や漏れ電流が増
大し、歩留りが低くなるという問題がある。However, the repairability of the oxide film in organic semiconductor solid electrolytic capacitors is slightly weaker than that of capacitors using general electrolytes, and even in the film formed by reconversion of ammonium adipate, mechanical stress during impregnation with TCNQ salt,
A weak portion exists in the chemical conversion coating due to thermal stress or chemical stress. These factors cause the problem that weak parts of the chemical conversion coating are destroyed, the equivalent series resistance and leakage current increase, and the yield becomes low.
このような問題を解決するため、従来は有機半導体を含
浸後又は樹脂封口後酸化皮膜を修復し、漏れ電流値を小
さくする目的で100℃前後の高温で電圧処理(エージ
ング)を行なっている。また、このような漏れ電流の問
題を解決するため、本願出願人は特願昭63−2645
71号(出願日、昭和63年10月20日)において、
コンデンサ素子に融解液化した有機半導体を含浸させ、
冷却固化した後に、素子の内部に純水を含浸させ、次に
素子の水分を乾燥させる固体電解コンデンサの製造方法
を提案した。そして、この場合、TCNQ塩の含浸した
素子内部に純水を含浸後乾燥させることにより、酸化皮
膜の欠損部に入りこんだ有機半導体は絶縁体化しやすく
なり、電圧処理(エージング)での酸化皮膜の修復性が
著しく向上する。To solve such problems, conventionally, after impregnating with an organic semiconductor or sealing with a resin, the oxide film is repaired and voltage treatment (aging) is performed at a high temperature of around 100° C. in order to reduce the leakage current value. In addition, in order to solve this problem of leakage current, the applicant of the present application filed the patent application No. 63-2645.
No. 71 (filing date: October 20, 1988),
Impregnating a capacitor element with a molten and liquefied organic semiconductor,
We proposed a method for manufacturing solid electrolytic capacitors in which the interior of the element is impregnated with pure water after cooling and solidifying, and then the moisture in the element is dried. In this case, by impregnating the inside of the element impregnated with TCNQ salt with pure water and drying it, the organic semiconductor that has entered the defective part of the oxide film can easily become an insulator, and the oxide film can be removed by voltage treatment (aging). Repairability is significantly improved.
しかし乍ら、このような従来の製造方法においては、水
をTCNQ塩含浸済み素子内部に含浸するため、等価直
列抵抗の増大を招くという欠点があった。However, in such a conventional manufacturing method, since water is impregnated into the TCNQ salt-impregnated element, there is a drawback that the equivalent series resistance increases.
(ハ)発明が解決しようとする課題
本発明は、TCNQ塩を固体電解質に用いた有機半導体
固体電解コンデンサにおいて、前述の如き問題、即ち、
水をコンデンサ素子内部に含浸することに起因する等価
直列抵抗の増大化を抑制するものである。(c) Problems to be Solved by the Invention The present invention solves the above-mentioned problems in an organic semiconductor solid electrolytic capacitor using TCNQ salt as a solid electrolyte.
This suppresses an increase in equivalent series resistance caused by impregnation of water into the capacitor element.
(ニ)課題を解決するための手段
本発明はコンデンサ素子に融解液化したTCNQ塩を含
浸し、冷却固化した後、素子内部に分子における双極子
モーメントの値が水分子の値未満である溶媒、例えばメ
タノール、エタノール、1−フロパノール、2−プロパ
ノール、ベンゼン、ヘキサン、四塩化炭素、クロロホル
ム、トルエン等を水に代えて含浸させるものである。(d) Means for Solving the Problems The present invention impregnates a capacitor element with molten and liquefied TCNQ salt, cools and solidifies it, and then contains a solvent in which the dipole moment value of the molecules is less than the value of water molecules inside the element. For example, methanol, ethanol, 1-furopanol, 2-propanol, benzene, hexane, carbon tetrachloride, chloroform, toluene, etc. are used instead of water for impregnation.
(ホ)作 用
詳細な作用については現在の所、判らない部分があるが
、凡そ次のようであると推測される。即ち、TCNQ塩
に液状分子を作用させると、クーロン力、ファンデルワ
ールス力或いは、交換斥力などのTCNQ塩と液状分子
間における相互作用により漏れ電流は低減するものと考
えられる。しかし液状分子として水又は水分子以上の双
極子モーメントの値をもつ極性分子を用いた場合、各分
子におけるそれぞれのへテロ原子である酸素などには、
非結合電子対を有するため、TCNQ塩のカチオン側に
特にこれらの相互作用が強く生じる。従って、漏れ電流
は低減するものの、同時にTCNQ塩のカチオン側への
必要以上の配位のため、半導体としての機能が弱められ
、その結果、等個直列抵抗が増大するものと考えられる
。(e) Effect Although there are some parts that are currently unknown about the detailed effect, it is assumed that it is roughly as follows. That is, when liquid molecules act on the TCNQ salt, it is thought that the leakage current is reduced due to interactions between the TCNQ salt and the liquid molecules, such as Coulomb force, van der Waals force, or exchange repulsion. However, when water or a polar molecule with a dipole moment value greater than that of a water molecule is used as a liquid molecule, each heteroatom such as oxygen in each molecule has
These interactions are especially strong on the cation side of the TCNQ salt because it has non-bonding electron pairs. Therefore, although the leakage current is reduced, at the same time, the function as a semiconductor is weakened due to the unnecessary coordination of the TCNQ salt to the cation side, and as a result, it is considered that the equal series resistance increases.
本発明では双極子モーメントの値が水分子の値未満であ
る分子、即ち水分子に比較し、より無極性に近い液状分
子を用いることによりTCNQ塩のカチオン側への配位
を従来の水の場合より低減し、等個直列抵抗の増大化を
抑制するものである。In the present invention, by using molecules whose dipole moment value is less than that of water molecules, that is, liquid molecules that are more nonpolar than water molecules, the coordination of the TCNQ salt to the cation side is improved compared to that of conventional water molecules. This is to suppress the increase in equal series resistance.
(へ)実施例
エツチング処理および化成処理を行なったアルミニウム
箔を陽極箔(1)とし、対向陰極箔(2)との間にセパ
レータ(3)を挟み円筒上に巻き取り、コンデンサ素子
(6)を形成する。次にTCNQ塩の粉末(8)をケー
スに収納し、290〜300℃の温度でTCNQ塩を融
解液化し、コンデンサ素子(6)を浸漬してTCNQ塩
を含浸する。含浸後ケース(7)を冷却し、コンデンサ
素子に含浸したTCNQ塩を冷却固化し、ケース(7)
内にコンデンサ素子(6)を固定する。(f) Example An aluminum foil that has been subjected to etching treatment and chemical conversion treatment is used as an anode foil (1), a separator (3) is sandwiched between it and a counter cathode foil (2), and the capacitor element (6) is wound up into a cylinder. form. Next, the TCNQ salt powder (8) is stored in a case, the TCNQ salt is melted and liquefied at a temperature of 290 to 300°C, and the capacitor element (6) is immersed to be impregnated with the TCNQ salt. After the impregnation, the case (7) is cooled, and the TCNQ salt impregnated into the capacitor element is cooled and solidified.
A capacitor element (6) is fixed inside.
次に該ケース(7)の開口部まで、分子における双極子
モーメントの値が水分子の値未満である溶媒、例えばベ
ンゼン、ヘキサン、四塩化炭素、クロロホルム、トルエ
ン、エタノール、メタノール、1−プロパノール、2−
プロパノールの液体を注入し、注入後85℃の温度にて
放置する。そしてケース内に残留するこの液体の消失後
、ケース開口部を樹脂(9)又は、ゴムにて封止し、1
25℃にて1時間コンデンサの定格電圧を印加(エージ
ング)して目的とする固体電解コンデンサを完成させる
。Next, up to the opening of the case (7), a solvent whose molecule has a dipole moment value less than that of a water molecule, such as benzene, hexane, carbon tetrachloride, chloroform, toluene, ethanol, methanol, 1-propanol, 2-
A propanol liquid is injected and left at a temperature of 85°C after injection. After the liquid remaining in the case disappears, the opening of the case is sealed with resin (9) or rubber.
The rated voltage of the capacitor is applied (aging) at 25° C. for 1 hour to complete the desired solid electrolytic capacitor.
第1表は本発明の実施例である分子における双極子モー
メントの値が水分子の値より大きい溶媒を使用して製造
した場合と、従来例である水の場合の漏れ電流値並びに
等価直列抵抗値の比較データを示すものである。Table 1 shows the leakage current value and equivalent series resistance in the case of manufacturing using a solvent in which the value of the dipole moment in the molecule is larger than the value of the water molecule, which is an example of the present invention, and in the case of water, which is the conventional example. This shows value comparison data.
尚り、C,は漏れ電流のデータであり、定格電圧印加1
0秒後の値で試料者10個の値の平均値を示している。In addition, C, is the leakage current data, and the rated voltage application 1
The value after 0 seconds shows the average value of the 10 values of the sample.
E、S、R,は100KHzにおける等価直列抵抗値で
あり、試料者10個の値の平均値を示している。E, S, and R are equivalent series resistance values at 100 KHz, and indicate the average value of the values of 10 samples.
第1表において(a)は定格電圧35V、容量0.68
μF、TCNQ塩としてN−n−ブチルイソキノリニウ
ム・TCNQ、を用いたコンデンサ、(b)は定格電圧
25V、容量1μF、TCNQ塩としてN、N−ペンタ
メチレン・ルチジニウム、・TCNQ、とN−フェネチ
ル・ルチジニウム・TCNQ、の等量混合物を用いたコ
ンデンサである。(A )(B )(C)(D )(E
)(F )(G )(H)(1)は本発明の実施例で
あり、分子における双極子モーメントの値が水分子の値
未満である溶媒を使用した場合の製造方法によるもので
ある。(J)は従来の水を使用した場合の製造方法であ
る。参考までに(K)(L)に双極子モーメントの値が
水分子の値より大きい分子の溶媒を使用した場合のデー
タを示し、また(M)には何も使用しなかった場合のデ
ータを記載する。In Table 1, (a) has a rated voltage of 35V and a capacity of 0.68.
A capacitor using N-n-butylisoquinolinium TCNQ as μF, TCNQ salt, (b) has a rated voltage of 25 V, a capacitance of 1 μF, and N-pentamethylene lutidinium, TCNQ as TCNQ salt, and N - A capacitor using an equal mixture of phenethyl rutidinium TCNQ. (A) (B) (C) (D) (E
)(F)(G)(H)(1) is an example of the present invention, and is based on a production method using a solvent in which the value of the dipole moment in the molecule is less than the value of the water molecule. (J) is a conventional manufacturing method using water. For reference, (K) and (L) show data when using a solvent with a molecule whose dipole moment value is larger than that of water molecules, and (M) shows data when nothing was used. Describe it.
第1表より次のことが判かる。即ち、双極子モーメント
の値に関係なく、液状分子をTCNQ塩に作用させた場
合、漏れ電流は著しく低減している。しかし乍ら等個直
列抵抗については、使用した分子(溶媒)の双極子モー
メントの値によりかなりの差が生じている。即ち水分子
以上の双極子モーメントの値を有した分子(溶媒)の使
用(水の使用を含む)においては急激に等価直列抵抗は
劣化し、−力水分子より小さい双極子モーメントの値を
有する分子(溶媒)の使用においては、等価直列抵抗の
劣化は小さい。特に双極子モーメントの値がゼロ近辺で
ある所謂、無極性分子(溶媒)の使用においては等価直
列抵抗の劣化は殆ど生じていない。これらのことからT
CNQ塩に作用させた分子(溶媒)の双極子モーメント
の値とコンデンサの性能(特に等価直列抵抗の劣化)と
は密接な関係があることが分かる。そして、水分子より
小さい双極子モーメントの分子(溶媒)をTCNQ塩に
作用させれば、従来(水の使用時)に比べて、等価直列
抵抗の増大化は著しく抑制される。The following can be seen from Table 1. That is, regardless of the value of the dipole moment, the leakage current is significantly reduced when liquid molecules act on the TCNQ salt. However, regarding the equal series resistance, there is a considerable difference depending on the value of the dipole moment of the molecule (solvent) used. In other words, when a molecule (solvent) with a dipole moment value greater than or equal to a water molecule is used (including the use of water), the equivalent series resistance deteriorates rapidly; When using molecules (solvent), the degradation of equivalent series resistance is small. In particular, when a so-called nonpolar molecule (solvent) whose dipole moment value is close to zero is used, there is almost no deterioration of the equivalent series resistance. From these things, T
It can be seen that there is a close relationship between the value of the dipole moment of the molecule (solvent) acting on the CNQ salt and the performance of the capacitor (especially the deterioration of the equivalent series resistance). If a molecule (solvent) with a dipole moment smaller than that of a water molecule acts on the TCNQ salt, an increase in the equivalent series resistance can be significantly suppressed compared to the conventional method (when water is used).
尚、本発明はコンデンサ素子として陽極箔と陰極箔とを
セパレータ紙を介して巻回した巻取り素子を使用した場
合に限られるものではなく、コンデンサ素子として弁作
用を有する金属粉末を加圧成形し焼結した焼結素子を使
用した場合にも適用できるものであることは言うまでも
ない。Note that the present invention is not limited to the case where a wound element in which an anode foil and a cathode foil are wound with a separator paper interposed therebetween is used as a capacitor element. Needless to say, the present invention is also applicable to the case where a sintered element is used.
(ト)発明の効果
このように本発明によれば、TCNQ塩を使用する有機
半導体固体電解コンデンサにおいて、水分子より小さい
双極子モーメントの分子(溶媒)をTCNQ塩に作用さ
せるので、等価直列抵抗の増大が抑制され、漏れ電流も
著しく低減する。(g) Effects of the invention As described above, according to the present invention, in an organic semiconductor solid electrolytic capacitor using TCNQ salt, molecules (solvent) having a dipole moment smaller than water molecules are made to act on the TCNQ salt, so that the equivalent series resistance This suppresses the increase in leakage current and significantly reduces leakage current.
第1図はコンデンサ素子の斜視図、第2図は固体電解コ
ンデンサの断面図である。
(1)(2)・・・陽、陰極箔、(3)・・・セパレー
タ、(6)・・・コンデンサ素子、(7)・・・アルミ
ケース、(8)・・・TCNQ錯塩。FIG. 1 is a perspective view of a capacitor element, and FIG. 2 is a sectional view of a solid electrolytic capacitor. (1) (2)...Positive, cathode foil, (3)...Separator, (6)...Capacitor element, (7)...Aluminum case, (8)...TCNQ complex salt.
Claims (2)
する金属を化成しエッチングした箔よりなる陽極箔と該
金属の薄箔よりなる陰極箔との間にセパレータ紙を介し
て巻回して形成したコンデンサ素子に、加熱融解可能で
且つ冷却固化後コンデンサ用電解質として使用し得る電
導度を有するTCNQ塩を加熱して含浸させ、冷却固化
させてなる有機半導体固体電解コンデンサにおいて、分
子における双極子モーメントの値が水分子の値未満であ
る溶媒を前記TCNQ塩の含浸済みコンデンサ素子内部
に含浸させた後、乾燥させる工程を含むことを特徴とす
る有機半導体固体電解コンデンサの製造方法。(1) A capacitor formed by winding a separator paper between an anode foil made of a chemically etched foil of a metal with a valve action such as aluminum, tantalum, or niobium, and a cathode foil made of a thin foil of the metal. In an organic semiconductor solid electrolytic capacitor in which the element is heated and impregnated with TCNQ salt that can be heated and melted and has a conductivity that can be used as an electrolyte for a capacitor after cooling and solidifying, and cooling and solidifying, the value of the dipole moment in the molecule A method for manufacturing an organic semiconductor solid electrolytic capacitor, comprising the steps of: impregnating the interior of the capacitor element impregnated with the TCNQ salt with a solvent having a value of less than the value of water molecules, and then drying the capacitor element.
の値未満である溶媒は、メタノール、エタノール、1−
プロパノール、2−プロパノール、ベンゼン、ヘキサン
、四塩化炭素、クロロホルム、トルエンである特許請求
の範囲第1項に記載の有機半導体固体電解コンデンサの
製造方法。(2) Solvents in which the value of the dipole moment in the molecule is less than that of water molecules include methanol, ethanol, 1-
The method for producing an organic semiconductor solid electrolytic capacitor according to claim 1, wherein propanol, 2-propanol, benzene, hexane, carbon tetrachloride, chloroform, and toluene are used.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2082502A JP3030047B2 (en) | 1990-03-29 | 1990-03-29 | Manufacturing method of organic semiconductor solid electrolytic capacitor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2082502A JP3030047B2 (en) | 1990-03-29 | 1990-03-29 | Manufacturing method of organic semiconductor solid electrolytic capacitor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03280520A true JPH03280520A (en) | 1991-12-11 |
| JP3030047B2 JP3030047B2 (en) | 2000-04-10 |
Family
ID=13776276
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2082502A Expired - Fee Related JP3030047B2 (en) | 1990-03-29 | 1990-03-29 | Manufacturing method of organic semiconductor solid electrolytic capacitor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3030047B2 (en) |
-
1990
- 1990-03-29 JP JP2082502A patent/JP3030047B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP3030047B2 (en) | 2000-04-10 |
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