JPH03283385A - Thin film electroluminescence display device - Google Patents
Thin film electroluminescence display deviceInfo
- Publication number
- JPH03283385A JPH03283385A JP2085832A JP8583290A JPH03283385A JP H03283385 A JPH03283385 A JP H03283385A JP 2085832 A JP2085832 A JP 2085832A JP 8583290 A JP8583290 A JP 8583290A JP H03283385 A JPH03283385 A JP H03283385A
- Authority
- JP
- Japan
- Prior art keywords
- display device
- thin film
- curvature
- glass substrate
- electroluminescence display
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electroluminescent Light Sources (AREA)
Abstract
Description
【発明の詳細な説明】
(産業上の利用分野)
本発明は、薄膜エレクトロルミネッセンス表示装置(以
下薄膜EL表示装置という)に関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a thin film electroluminescent display device (hereinafter referred to as a thin film EL display device).
(従来の技術) 薄膜EL表示装置の基本構造を第5図に示す。(Conventional technology) The basic structure of a thin film EL display device is shown in FIG.
第5図によって薄膜EL表示装置の構造を具体的に説明
すると、ガラス基板等の透明基板lに格子状に配置した
透明電極2、スパッタリング法で作られたY、O,等の
誘電体3、蒸着法で作られたMn等をドープしたZnS
等の発光層4、誘電体3と同様の誘電体5、透明電極2
と直交するように配置したAI等の背面電極6によって
構成される。透明電極2と背面電極6に交流電圧を加え
ると電極の交差した部分が発光する。尚、誘電体3゜5
の1方は省略することができる。To specifically explain the structure of a thin film EL display device with reference to FIG. 5, transparent electrodes 2 arranged in a grid pattern on a transparent substrate l such as a glass substrate, a dielectric material 3 made of Y, O, etc. made by sputtering method, ZnS doped with Mn etc. made by vapor deposition method
A light emitting layer 4 such as, a dielectric 5 similar to the dielectric 3, a transparent electrode 2
The back electrode 6 is made of AI or the like and is arranged perpendicular to the rear electrode 6. When an alternating current voltage is applied to the transparent electrode 2 and the back electrode 6, the portion where the electrodes intersect emits light. In addition, the dielectric material is 3゜5
One of them can be omitted.
(発明が解決しようとする課題)
従来、薄膜EL表示装置の透明基板には、平面状のガラ
ス板が用いられてきた。しかし、ヘルメットの風防や掲
示板など表示装置が装着される装置によっては、より視
認性を上げる必要性がある。(Problems to be Solved by the Invention) Conventionally, a flat glass plate has been used as a transparent substrate of a thin film EL display device. However, depending on the device to which the display device is attached, such as a helmet windshield or a bulletin board, there is a need to further improve visibility.
視認性を上げる為、従来は第3図に示す如く、小型パネ
ルを角度をもたせて配置していた。これでは各パネル間
の縦目は表示されず各パネル間の表示の速読性が得られ
ず視認性が悪いという問題点があった。In order to improve visibility, conventionally, small panels were arranged at an angle, as shown in Figure 3. This poses a problem in that the vertical grain between each panel is not displayed, and the display between the panels cannot be read quickly, resulting in poor visibility.
本発明は視認性に優れる薄膜EL表示装置を提供するも
のである。The present invention provides a thin film EL display device with excellent visibility.
第2図、第4図に示す如く、透明基板に曲率をもたせた
事を特徴とする。曲率をもたせた部分は透明基板の一部
であっても良い。曲率をもたせることによりパネル間の
縦目を除くことができるので、速読性が向上し、視認性
を上げることができる。As shown in FIGS. 2 and 4, the transparent substrate is characterized by having a curvature. The curved portion may be part of the transparent substrate. By providing curvature, it is possible to eliminate vertical grain between panels, thereby improving speed reading and visibility.
以下、掲示板を1例にとり第4図に従って説明する。ガ
ラス基板lには第4図に示す様な半円形状のものを用い
た。その上に透明電極として錫添加酸化インジウム2(
ITO)をスッパタ法により作製し、フォトリソグラフ
ィにより、所定のパターンを形成した。その上に順次、
第一絶縁層として五酸化タンタル3 (Ta、O,)を
スパッタ法で、次に発光層としてマンガン添加硫化亜鉛
4(ZnS:Mn)を電子ビーム蒸着法により、次に第
2絶縁層としてTa、0.5をスパッタ法で、そして最
後に背面電極として、アルミニウム6(AI)をスパッ
タ法で順次堆積する。次にAIをフォトリソグラフィに
より、所定のパターンに形成し、最後に防湿封止を行う
。封止ガラスキャップをかぶせたこの基板を駆動回路と
接続することにより、第2図に示すように薄膜E L表
示装置付掲示板が完成する。Hereinafter, an explanation will be given with reference to FIG. 4, taking a bulletin board as an example. A semicircular glass substrate l as shown in FIG. 4 was used. On top of that, tin-doped indium oxide 2 (
ITO) was produced by a sputtering method, and a predetermined pattern was formed by photolithography. On top of that,
Tantalum pentoxide 3 (Ta, O,) was deposited as the first insulating layer by sputtering, then manganese-doped zinc sulfide 4 (ZnS:Mn) was deposited as the light emitting layer by electron beam evaporation, and then Ta was deposited as the second insulating layer. , 0.5 by sputtering, and finally aluminum 6 (AI) as a back electrode by sputtering. Next, the AI is formed into a predetermined pattern by photolithography, and finally moisture-proof sealing is performed. By connecting this substrate covered with a sealing glass cap to a drive circuit, a bulletin board with a thin film EL display device is completed as shown in FIG.
他の例として、第1図に示すヘルメットの風防を掲げる
。第1図(a)、(b)、(c)はそれぞれ斜視図、正
面図、上面図である。ガラス基板1の形状が第4図に示
すものと変わるだけで、作製法は同様である。Another example is the helmet windshield shown in FIG. FIGS. 1(a), (b), and (c) are a perspective view, a front view, and a top view, respectively. The manufacturing method is the same except that the shape of the glass substrate 1 is different from that shown in FIG. 4.
風防の一部に例えば速度を表示するための薄膜EL表示
装置を取付ける。For example, a thin film EL display device for displaying speed is attached to a part of the windshield.
(発明の効果)
薄膜EL表示装置は表示に縦目がなく視認性に優れるも
のである。(Effects of the Invention) The thin film EL display device has no vertical lines in the display and has excellent visibility.
第1図は本発明の一実施例を示すヘルメットを示すもの
で(a)、(b)、(c)はそれぞれ斜視図、正面図、
上面図、第2図は本発明の他の一実施例を示す掲示板の
斜視図、第3図は従来の掲示板を示す斜視図、第4図は
本発明の詳細な説明するための断面図、第5図は従来の
製法を説明するための断面図である。
符号の説明
1、透明基板
3、第一絶縁層
5、第二絶縁層
7、封止ガラスキャップ
9、風防
透明電極
発光層
背面電極
ヘルット
掲示板FIG. 1 shows a helmet showing one embodiment of the present invention, and (a), (b), and (c) are a perspective view, a front view, and a front view, respectively.
A top view, FIG. 2 is a perspective view of a bulletin board showing another embodiment of the present invention, FIG. 3 is a perspective view showing a conventional bulletin board, and FIG. 4 is a sectional view for explaining the present invention in detail. FIG. 5 is a cross-sectional view for explaining the conventional manufacturing method. Description of symbols 1, transparent substrate 3, first insulating layer 5, second insulating layer 7, sealing glass cap 9, windshield transparent electrode light emitting layer back electrode Herut bulletin board
Claims (1)
少なくとも片面に形成された誘電体とより構成される薄
膜エレクトロルミネッセンス表示装置において、透明基
板の少なくとも一部の曲率が零以外であることを特徴と
する薄膜エレクトロルミネッセンス表示装置。1. In a thin film electroluminescent display device comprising a transparent substrate, a transparent electrode, a light-emitting layer, a back electrode, and a dielectric formed on at least one side of the light-emitting layer, the curvature of at least a portion of the transparent substrate is non-zero. Characteristic thin film electroluminescent display device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2085832A JPH03283385A (en) | 1990-03-30 | 1990-03-30 | Thin film electroluminescence display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2085832A JPH03283385A (en) | 1990-03-30 | 1990-03-30 | Thin film electroluminescence display device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03283385A true JPH03283385A (en) | 1991-12-13 |
Family
ID=13869827
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2085832A Pending JPH03283385A (en) | 1990-03-30 | 1990-03-30 | Thin film electroluminescence display device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03283385A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5632663A (en) * | 1994-03-31 | 1997-05-27 | Nippondenso Co., Ltd. | Electroluminescent display having improved breakdown characteristics and manufacturing method thereof |
| KR100761131B1 (en) * | 2005-10-11 | 2007-09-21 | 엘지전자 주식회사 | Double-sided light emitting display device and manufacturing method thereof, and mobile communication terminal embedded therein |
| JP2015164130A (en) * | 2001-12-28 | 2015-09-10 | 株式会社半導体エネルギー研究所 | Light emitting device |
-
1990
- 1990-03-30 JP JP2085832A patent/JPH03283385A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5632663A (en) * | 1994-03-31 | 1997-05-27 | Nippondenso Co., Ltd. | Electroluminescent display having improved breakdown characteristics and manufacturing method thereof |
| JP2015164130A (en) * | 2001-12-28 | 2015-09-10 | 株式会社半導体エネルギー研究所 | Light emitting device |
| US9536901B2 (en) | 2001-12-28 | 2017-01-03 | Semiconductor Energy Laboratory Co., Ltd. | Method for fabricating a semiconductor device by bonding a layer to a support with curvature |
| KR100761131B1 (en) * | 2005-10-11 | 2007-09-21 | 엘지전자 주식회사 | Double-sided light emitting display device and manufacturing method thereof, and mobile communication terminal embedded therein |
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