JPH03286565A - Bonding pad of ic with photosensor - Google Patents

Bonding pad of ic with photosensor

Info

Publication number
JPH03286565A
JPH03286565A JP2088611A JP8861190A JPH03286565A JP H03286565 A JPH03286565 A JP H03286565A JP 2088611 A JP2088611 A JP 2088611A JP 8861190 A JP8861190 A JP 8861190A JP H03286565 A JPH03286565 A JP H03286565A
Authority
JP
Japan
Prior art keywords
layer
bonding pad
light
intercepting
metallic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2088611A
Other languages
Japanese (ja)
Inventor
Satoyuki Takanabe
高鍋　智行
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2088611A priority Critical patent/JPH03286565A/en
Publication of JPH03286565A publication Critical patent/JPH03286565A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H10W72/932—Plan-view shape, i.e. in top view
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/981—Auxiliary members, e.g. spacers
    • H10W72/983—Reinforcing structures, e.g. collars

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To prevent the generation of a parasitic current and malfunction of an inside circuit by cutting a through hole in the periphery of a bonding pad, connecting the bonding pad with a metallic light-intercepting layer, and shortening the distance between the metallic light-intercepting layer connected to this pad and another metallic light-intercepting layer as much as possible, by overlapping a metallic wiring layer greatly on the metallic wiring layer with the metallic light-intercepting layers. CONSTITUTION:An isolation layer 3 is formed with a P-type diffusion layer to isolate an element region. And a bonding pad 5 is constituted on an insulating underlay layer 4. And a wiring metal layer 6 connects between diffusion layers 2 being an element region. Besides a metallic light-intercepting film 8 is formed on a layer-insulating layer 7 made from SiN, for example. And this light- intercepting film 8 is connected to the bonding pad 5 via a through hole 9 cut in the periphery of the bonding pad 5, and isolated from the metallic light- intercepting film 8 in the element region, overlapping greatly on the wiring metal layer 6. And the through hole 9 is cut so as to surround the periphery of the bonding pad.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 この発明は受光素子を有する半導体チップ上に形成され
るボンディングパッドに関するものである○ 〔従来の技術〕 第３図は従来の半導体チップ上に形成されたボンディン
グパッドの構造を示す断面図である。図に訃いて、Ｃ１
）はＰ型拡散層で形成される基板層で。[Detailed Description of the Invention] [Industrial Field of Application] This invention relates to a bonding pad formed on a semiconductor chip having a light-receiving element. FIG. 3 is a cross-sectional view showing the structure of a formed bonding pad. C1
) is a substrate layer formed of a P-type diffusion layer.

この基板層（１）上に素子領域として例えばＮ型拡散層
（２）音形成し、・この拡散層（２）間を分離層（３）
で素子間の分離を行なっている。そして、下敷絶縁層（
４）上にボンディングバンド（５）を形成し、さらに素
子領域である拡散層（２）間を配線用金属層（６）で接
続している。そして１例えばＳｉＮで形成された層間絶
縁層（７）を挾んで金属遮光膜（８）が形成された後、
保護膜ａＯで覆って構成されている。For example, an N-type diffusion layer (2) is formed as an element region on this substrate layer (1), and a separation layer (3) is formed between the diffusion layers (2).
The elements are separated by Then, the underlying insulation layer (
4) A bonding band (5) is formed on top, and the diffusion layers (2), which are element regions, are further connected by a wiring metal layer (6). 1. After a metal light shielding film (8) is formed sandwiching an interlayer insulating layer (7) made of SiN, for example,
It is covered with a protective film aO.

次に動作について説明する。半導体内部にはいたるとこ
ろにＰＮ接合が形成されているため、光が入射した場合
、光の吸収されたＮ型及びＰ型頭域で電子−ホール対が
発生する。このうちのいくつかの電子Ｃホール）ｒｉ、
空乏層内上ドリフトしてＮ型（Ｐ型）領域へ達し、すな
わちＮ型からＰ型頭域へ逆方向を流が発生することにな
る。Next, the operation will be explained. Since PN junctions are formed everywhere inside the semiconductor, when light is incident, electron-hole pairs are generated in the N-type and P-type head regions where the light is absorbed. Some of these electron C holes) ri,
It drifts upward within the depletion layer and reaches the N-type (P-type) region, ie, a flow occurs in the opposite direction from the N-type to the P-type head region.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

従来の光センサ付ＩＣのボンディングパッドは以上の様
に構成されていたので、受光素子を有するため当然半導
体チップ上に光が入射するのに対し、受光素子領域外チ
ップ内部に光が侵入した場合、内部のＰＮ接合に訃いて
寄生電流が発生し、この電流が内部回路に流れ込むと、
誤動作を生じてし筐う。そのため、受光素子以外は金属
遮光膜に工ＩＩ光が行なわれているわけであるが、従来
の光センサ付ＩＣのボンディングパッドに訃いてｒｉ、
ボンディングパッド周辺にｒｉ遮光が及ばないため、こ
の領域から侵入した光にニジ誤動作してしまうという問
題点があった。The bonding pad of a conventional IC with a photosensor was constructed as described above, and since it has a light-receiving element, light naturally enters the semiconductor chip, but if light enters the inside of the chip outside the area of the light-receiving element. , a parasitic current is generated in the internal PN junction and this current flows into the internal circuit,
This may cause malfunction. Therefore, light is applied to the metal light-shielding film except for the light-receiving element.
Since the RI light shielding does not extend to the area around the bonding pad, there is a problem in that light entering from this area causes malfunction.

この発明は上記のような問題点を解消するためになされ
たもので、ボンディングパッド周辺から光が侵入するこ
とを防止することにニジ、寄生電流の発生を無くし、内
部回路の誤動作を防ぐことのできる光センサ付ＩＣのボ
ンディングパッドを得ることを目的とする。This invention was made to solve the above-mentioned problems, and its purpose is to prevent light from entering from around the bonding pad, eliminate the generation of parasitic current, and prevent malfunction of internal circuits. The purpose of this invention is to obtain a bonding pad for an IC with a photosensor.

〔課題を解決するための手段〕[Means to solve the problem]

この発明に係る光センサ付ＩＣのボンディングパッドは
、ボンディングパッドの周囲にスルーホールを設け１．
金属遮光層とポンディングバンドを接続し、このポンデ
ィングバンドに接続した金属遮光層と、他の金属遮光層
との間隔は金属配線層上で、この金属配線層と金属Ｓ光
層とのオーバーラングを大きく取ることに工や、極力小
ざくする工う構成したものである。The bonding pad of an IC with a photosensor according to the present invention has a through hole around the bonding pad as follows:1.
A metal light-shielding layer and a bonding band are connected, and the distance between the metal light-shielding layer connected to this bonding band and another metal light-shielding layer is determined by the overlap between this metal wiring layer and the metal S light layer on the metal wiring layer. It is constructed by making the rungs as large as possible or making them as small as possible.

〔作用〕[Effect]

この発明にかける光センサ付ＩＣのボンディングパッド
は、ボンディングパッドの周囲にスルーホールを形成し
、金属遮光層と接続することに１勺ボンディングバンド
と金属遮光層との間隙から光が侵入するのを防き゛、か
つ金属遮光層と金属配線層のオーバラップを大きくとる
ことに工や、光の廻り込みを抑制することが可能となり
、光の侵入による寄生電流の発生を防止することができ
、その寄生電流による内部回路の誤動作を防止する。The bonding pad of an IC with a photosensor according to the present invention has a through hole formed around the bonding pad, and is connected to a metal light shielding layer to prevent light from entering through the gap between the bonding band and the metal light shielding layer. By creating a large overlap between the metal light-shielding layer and the metal wiring layer, it is possible to suppress the penetration of light and prevent the generation of parasitic current due to the intrusion of light. Prevents internal circuit malfunction due to current.

〔実施例〕〔Example〕

以下、この発明の一実施例を図について説明する。第１
図にかいて、　（１）はＰ型拡散層で形成される基板層
、（２）ｒｉ基板層（１）の上に素子領域として形成さ
れる拡散層で、この素子領域を分離するためＰ型の拡散
層で分離層（３）ヲ形成している。そして下敷絶縁層（
４）上にボンディングパッド（５）ヲ構成し、ｉた、素
子領域である拡散層（２）間を配線用金属層（６）で接
続している。さらに例えばＳｉＮで層間絶縁層（７）を
形成した上に、金属遮光膜（８）を構成している。そし
て、この金属遮光膜（８）　Ｆｉポンディングバンド（
５）の周囲に設けられたスルーホールｆ９）　Ｋ工りボ
ンディングパッド（５）と接続されて構成され、かつ、
配線用金属層（６）上でオーバラップを大きく取り、素
子領域にｋける金属遮光膜（８）と分離されている。第
２図はボンディングパッド上面図であり、スルーホール
（９）　ｒｉボンディングパソドの周囲’に囲む様に形
成されている。An embodiment of the present invention will be described below with reference to the drawings. 1st
In the figure, (1) is a substrate layer formed of a P-type diffusion layer, and (2) a diffusion layer formed as an element region on the RI substrate layer (1). A separation layer (3) is formed by the diffusion layer of the mold. And the underlying insulation layer (
4) A bonding pad (5) is formed on the top, and a metal layer (6) for wiring connects the diffusion layer (2) which is an element region. Further, an interlayer insulating layer (7) is formed of SiN, for example, and a metal light shielding film (8) is formed thereon. Then, this metal light shielding film (8) Fi bonding band (
The through hole f9) provided around the 5) is configured to be connected to the K-shaped bonding pad (5), and
It has a large overlap on the wiring metal layer (6) and is separated from the metal light shielding film (8) in the element region. FIG. 2 is a top view of the bonding pad, and a through hole (9) is formed to surround the ri bonding pad.

〔発明の効果〕〔Effect of the invention〕

以上の様にこの発明に工れば、金Ｍ＆遮光膜とボンディ
ングパッドを、ボンディングパッドの周囲に設けたスル
ーホールにニジ接続することにより。According to the invention as described above, the gold M & light shielding film and the bonding pad are connected to the through hole provided around the bonding pad.

金属遮光膜とポンディングバンドの間隙は金Ｒ遮光膜で
ふさがれることになυ、九の侵入径路がなくなるため、
光の廻り込みにニジ、内部のＰＮ接合で発生する寄生電
流が抑えられるため、内部回路にｐける誤動作の発生を
防止することかで＠２さらに、ボンディングパッドの周
囲にも素子領域を形成することが可能になるため、チン
ブサイズの縮小も期待できるという効果がある。The gap between the metal light-shielding film and the bonding band is closed by the gold R light-shielding film, and the penetration path of υ and 9 is eliminated.
Since the parasitic current generated in the internal PN junction is suppressed due to the light going around, it is possible to prevent malfunctions in the internal circuit. As a result, it is possible to expect a reduction in chimbu size.

【図面の簡単な説明】[Brief explanation of drawings]

第１図はこの発明の一実施例による光センサ付ＩＣのポ
ンディングバンドを示す断面図、第２図は第１図の平面
図、第３図は従来の光センサ付ＩＣのボンディングパッ
ドを示す断面図である。 図にかいて、（１）は基板層、＋２＋　ｉｄ拡散層、（
３）は分離層、（４）は下敷絶縁層、（５）はポンディ
ングバンド、（６）は配線用金属層、（７）は層間絶縁
層、（８）は金属遮光膜、（９）はスルーホールを示す
。 な訃、図中、同一符号は同一、又は相当部分を示す。FIG. 1 is a sectional view showing a bonding band of an IC with a photosensor according to an embodiment of the present invention, FIG. 2 is a plan view of FIG. 1, and FIG. 3 is a bonding pad of a conventional IC with a photosensor. FIG. In the figure, (1) is the substrate layer, +2+ id diffusion layer, (
3) is a separation layer, (4) is an underlying insulating layer, (5) is a bonding band, (6) is a metal layer for wiring, (7) is an interlayer insulating layer, (8) is a metal light shielding film, (9) indicates a through hole. In the figures, the same reference numerals indicate the same or corresponding parts.

Claims (1)

【特許請求の範囲】[Claims] 　受光素子に有する半導体チップ上に形成されたボンデ
ィングパッドにおいて、前記ボンディングパッドの周囲
にスルーホールを設け、金属遮光膜と接続したことを特
徴とする光センサ付ＩＣのボンディングパッド。1. A bonding pad for an IC with a photosensor, characterized in that in a bonding pad formed on a semiconductor chip included in a light receiving element, a through hole is provided around the bonding pad and connected to a metal light shielding film.
JP2088611A 1990-04-02 1990-04-02 Bonding pad of ic with photosensor Pending JPH03286565A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2088611A JPH03286565A (en) 1990-04-02 1990-04-02 Bonding pad of ic with photosensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2088611A JPH03286565A (en) 1990-04-02 1990-04-02 Bonding pad of ic with photosensor

Publications (1)

Publication Number Publication Date
JPH03286565A true JPH03286565A (en) 1991-12-17

Family

ID=13947611

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2088611A Pending JPH03286565A (en) 1990-04-02 1990-04-02 Bonding pad of ic with photosensor

Country Status (1)

Country Link
JP (1) JPH03286565A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0817280A3 (en) * 1996-06-26 1998-12-16 Oki Electric Industry Co., Ltd. Optical sensor for reading a pattern

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0817280A3 (en) * 1996-06-26 1998-12-16 Oki Electric Industry Co., Ltd. Optical sensor for reading a pattern

Similar Documents

Publication Publication Date Title
JP7309670B2 (en) Solid-state imaging device
JPH0669040B2 (en) Optical semiconductor device
KR100208633B1 (en) A photodiode built-in semiconductor device
JPH03286565A (en) Bonding pad of ic with photosensor
EP0590598A1 (en) Semiconductor photodiode comprising a light shielding layer
JP3342291B2 (en) Integrated circuit with built-in photodiode
US5148249A (en) Semiconductor protection device
JPH03280567A (en) Infrared sensor
JP2852222B2 (en) Optical semiconductor integrated circuit device
JP2002184987A (en) Semiconductor device
JP3157274B2 (en) Optical semiconductor device
JP2000200892A (en) Semiconductor device with built-in photodiode
JPH0527990B2 (en)
JP3748946B2 (en) Semiconductor device with built-in photodiode
JP3384690B2 (en) Optical semiconductor integrated circuit
JP2008311278A (en) Optical semiconductor device
JPH04206768A (en) Protecting circuit of semiconductor
JP3138057B2 (en) Optical semiconductor device
WO1997023909A1 (en) Integrated circuit incorporating photodiode
JPH09181290A (en) Semiconductor device with built-in photoreceptor element
JPS6244826B2 (en)
JPH09321271A (en) Integrated circuit with built-in photodiode
JPH1050966A (en) Optical semiconductor integrated circuit
JP2003007703A (en) Semiconductor device
JP2000200893A (en) Integrated circuit with built-in photodiode