JPH0328737U - - Google Patents

Info

Publication number
JPH0328737U
JPH0328737U JP8949189U JP8949189U JPH0328737U JP H0328737 U JPH0328737 U JP H0328737U JP 8949189 U JP8949189 U JP 8949189U JP 8949189 U JP8949189 U JP 8949189U JP H0328737 U JPH0328737 U JP H0328737U
Authority
JP
Japan
Prior art keywords
fuse
length
fusing part
semiconductor device
width
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8949189U
Other languages
Japanese (ja)
Other versions
JP2523856Y2 (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1989089491U priority Critical patent/JP2523856Y2/en
Publication of JPH0328737U publication Critical patent/JPH0328737U/ja
Application granted granted Critical
Publication of JP2523856Y2 publication Critical patent/JP2523856Y2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)

Description

【図面の簡単な説明】[Brief explanation of drawings]

第１図は本考案一実施例を示すヒユーズ部の平
面図、第２図は本考案の他の実施例を示すヒユー
ズ部の平面図、第３図は本考案の原理を説明する
ための図、第４図は従来のヒユーズ部を示す平面
図、第５図はそのＡ−Ａ′断面図である。 １……溶断部（ヒユーズ部分）。 Fig. 1 is a plan view of a fuse section showing one embodiment of the invention, Fig. 2 is a plan view of a fuse section showing another embodiment of the invention, and Fig. 3 is a diagram for explaining the principle of the invention. 4 is a plan view showing a conventional fuse portion, and FIG. 5 is a sectional view taken along line A-A'. 1... Fused part (fuse part).

Claims (1)

【実用新案登録請求の範囲】 (1) トリミング抵抗とヒユーズとを備えたトリ
ミング機能付の半導体装置において、 上記ヒユーズは、一定範囲内の長さで蛇行形状
に形成され、上記範囲は、上記ヒユーズの溶断に
要する電流値が最低となる長さ以上で、且つ、上
記ヒユーズの溶断箇所にばらつきが生じない長さ
以下であることを特徴とする半導体装置。 (2) ヒユーズ部分は、溶断部と非溶断部とから
なり、上記溶断部の幅よりも上記非溶断部の幅の
方が広くされたことを特徴とする実用新案登録請
求の範囲第１項記載の半導体装置。[Claims for Utility Model Registration] (1) In a semiconductor device with a trimming function that includes a trimming resistor and a fuse, the fuse is formed in a meandering shape with a length within a certain range, and the range is defined by the length of the fuse. A semiconductor device characterized in that the length is longer than the length at which the current value required for blowing out the fuse is minimum, and it is shorter than the length at which variation does not occur in the blowout location of the fuse. (2) Utility model registration claim 1, characterized in that the fuse portion consists of a fusing part and a non-fusing part, and the width of the non-fusing part is wider than the width of the fusing part. The semiconductor device described.
JP1989089491U 1989-07-28 1989-07-28 Semiconductor device Expired - Fee Related JP2523856Y2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1989089491U JP2523856Y2 (en) 1989-07-28 1989-07-28 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1989089491U JP2523856Y2 (en) 1989-07-28 1989-07-28 Semiconductor device

Publications (2)

Publication Number Publication Date
JPH0328737U true JPH0328737U (en) 1991-03-22
JP2523856Y2 JP2523856Y2 (en) 1997-01-29

Family

ID=31639067

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1989089491U Expired - Fee Related JP2523856Y2 (en) 1989-07-28 1989-07-28 Semiconductor device

Country Status (1)

Country Link
JP (1) JP2523856Y2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001093949A (en) * 1999-08-02 2001-04-06 Motorola Inc Integrated circuit inspection method and apparatus

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57104252A (en) * 1980-12-19 1982-06-29 Seiko Instr & Electronics Ltd Polycrystal silicon-fuse-memory and its manufacture
JPS61147548A (en) * 1984-12-21 1986-07-05 Nec Ic Microcomput Syst Ltd Semiconductor integrated circuit device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57104252A (en) * 1980-12-19 1982-06-29 Seiko Instr & Electronics Ltd Polycrystal silicon-fuse-memory and its manufacture
JPS61147548A (en) * 1984-12-21 1986-07-05 Nec Ic Microcomput Syst Ltd Semiconductor integrated circuit device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001093949A (en) * 1999-08-02 2001-04-06 Motorola Inc Integrated circuit inspection method and apparatus

Also Published As

Publication number Publication date
JP2523856Y2 (en) 1997-01-29

Similar Documents

Publication Publication Date Title
JPS621349U (en)
JPS6438746U (en)
JPS6361173U (en)
JP2523856Y2 (en) Semiconductor device
JPH0195413U (en)
JPS62149413U (en)
JPH0328634U (en)
JPS639149U (en)
JPS61123591U (en)
JPS6029345U (en) temperature sensitive switch
JPH0275792U (en)
JPH02123025U (en)
JPS649340U (en)
JPS6347551U (en)
JPH0355037U (en)
JPH048245U (en)
JPS6174007U (en)
JPS61115125U (en)
JPS61150757U (en)
JPH02118885U (en)
JPH0333938U (en)
JPH0343238U (en)
JPS62198646U (en)
JPH01177192U (en)
JPS6314337U (en)

Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees