JPH0329110A - Magnetic recording medium and its manufacturing method - Google Patents
Magnetic recording medium and its manufacturing methodInfo
- Publication number
- JPH0329110A JPH0329110A JP16078589A JP16078589A JPH0329110A JP H0329110 A JPH0329110 A JP H0329110A JP 16078589 A JP16078589 A JP 16078589A JP 16078589 A JP16078589 A JP 16078589A JP H0329110 A JPH0329110 A JP H0329110A
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- Japan
- Prior art keywords
- layer
- magnetic recording
- recording medium
- magnetic
- cr2n
- Prior art date
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Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は磁気記録媒体、及び、その製造方法に係り、特
に、磁気記録装置に用いられる磁気記録媒体に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a magnetic recording medium and a method for manufacturing the same, and particularly relates to a magnetic recording medium used in a magnetic recording device.
近年、コンピュータ・システムにおける外部記憶装置と
しての磁気ディスクの重要性が増大し,その記憶密度は
年々著しく増している。従来、磁気記録媒体は、針状γ
−Fe20avIi粒子を有機バインダ中に分散した粘
性材料をアルミニウム合金基板上にスピン塗布後、焼威
した塗布型媒体の薄膜化を中心に開発が進められ、現在
広く用いられている。しかし、より高密度化を達成する
には媒体の薄膜化が必要となるが、現在の塗布型媒体で
は技術的に限界があると考えられ、これに代わる高密度
磁気ディスクとして、薄膜化が容易な金属磁性薄膜媒体
をもつ磁気ディスクが注目されている。この金属磁性薄
膜媒体はメッキ技術によって形或するメッキ磁気ディス
ク、金属磁性膜(Co−Cr,Go−Ni等)、あるい
は、金属酸化物(γ−FezOa等)を用いたスパツタ
ディスク等が開発され、記録密度を大巾に増加しうるち
のと期待されている.
この様な薄膜連続媒体を用いた磁気ディスクの一般的な
構造は次のようである。基板は高純度アルミニウム合金
が用いられ、その上に下地層が形威される。下地層の上
に磁性層が形成されるが,この二層の間には両層の密着
性向上や磁性層の特性向上を目的として中間層が形成さ
れることがある.磁性層の上には保護層、あるいは、潤
滑層が形成される.
この下地層は、磁性層の薄膜化を可能とし、低浮上量に
おける安定したヘッド浮揚状態を確保するための平坦性
、および,平滑性が要求され、基板欠陥の著しい低減が
必要とされる。また、下地層には機械的強度、加工性、
研磨性などの諸特性の他に.例えば,特開昭59 −
45634号公報に記載されているように、磁性層、あ
るいは、保護層、潤滑層の形成過程における熱処理によ
っても下地層が帯磁しないことが要求される.
,下地層に無電解めっき法で形成したNi−P膜が一般
的に用いられているが、これ以外に,例えば、特開昭5
7−169930号公報に記載されているように、金属
アンダーコート層を形或する方法や特開昭49−749
11号公報,特開昭57 − 50324号公報,特開
昭59 − 217225号公報,特開昭60 − 2
01524号公報,特開昭63−183612号公報に
記載されているように,金属の酸化物,窒化物等を形成
する方法が知られている。In recent years, the importance of magnetic disks as external storage devices in computer systems has increased, and their storage density has increased significantly year by year. Conventionally, magnetic recording media have acicular γ
-Development has been focused on reducing the thickness of coated media that is burnt out after spin coating a viscous material in which -Fe20avIi particles are dispersed in an organic binder on an aluminum alloy substrate, and is currently widely used. However, in order to achieve higher density, it is necessary to make the media thinner, but current coated media are considered to have technical limitations, and as an alternative high-density magnetic disk, it is easy to make the media thinner. Magnetic disks with thin metal magnetic thin film media are attracting attention. This metal magnetic thin film medium has been developed as a plated magnetic disk formed by plating technology, a metal magnetic film (Co-Cr, Go-Ni, etc.), or a sputter disk using metal oxide (γ-FezOa, etc.). It is expected that this technology will significantly increase recording density. The general structure of a magnetic disk using such a thin film continuous medium is as follows. A high-purity aluminum alloy is used for the substrate, and a base layer is formed on it. A magnetic layer is formed on the underlayer, but an intermediate layer is sometimes formed between these two layers to improve the adhesion between the two layers and the properties of the magnetic layer. A protective layer or a lubricating layer is formed on top of the magnetic layer. This underlayer enables the magnetic layer to be thinned, requires flatness and smoothness to ensure a stable head flying state at a low flying height, and requires a significant reduction in substrate defects. In addition, the base layer has mechanical strength, workability,
In addition to various properties such as polishability. For example, JP-A-59-
As described in Japanese Patent No. 45634, it is required that the underlayer is not magnetized even by heat treatment during the formation process of the magnetic layer, protective layer, or lubricant layer. , a Ni-P film formed by electroless plating is generally used as the underlayer, but there are also other
As described in Japanese Patent Publication No. 7-169930, a method for forming a metal undercoat layer and Japanese Patent Application Laid-Open No. 49-749
11, JP-A-57-50324, JP-A-59-217225, JP-A-60-2
Methods of forming metal oxides, nitrides, etc. are known, as described in Japanese Patent Laid-Open No. 01524 and Japanese Patent Application Laid-open No. 183612/1983.
磁気記録媒体の基板は、一般に.AQ−Mg合金が用い
られているが、磁気ヘッドと磁気記録媒体の接触時の衝
撃に対しても磁気記録媒体の表面が損傷しないように、
特開昭60− 201524号公報に記載されているよ
うに、クロムの窒化物を下地層に用いることは従来から
知られていた.しかし、本発明者らが検討した結果、ク
ロムの窒化物には、合或条件によって、硬度の高いCr
2N と下地層には適さない硬度の低いCrNとが形成
することを見出だした。The substrate of a magnetic recording medium is generally . AQ-Mg alloy is used, but in order to prevent the surface of the magnetic recording medium from being damaged by impact when the magnetic head and magnetic recording medium come into contact,
As described in JP-A-60-201524, it has been known for a long time to use chromium nitride as an underlayer. However, as a result of studies by the present inventors, chromium nitride may contain Cr, which has high hardness, depending on the combination or conditions.
It has been found that 2N and CrN, which has low hardness and is not suitable as an underlayer, are formed.
本発明の目的は、高硬度のクロムの窒化物Cr2N層、
もしくは,Cr2N とCrNの混合層を下地層として
用いることにより、磁気ヘッドに対する耐摺動性に優れ
た磁気記録媒体を提供することにある。The object of the present invention is to provide a high hardness chromium nitride Cr2N layer;
Alternatively, by using a mixed layer of Cr2N and CrN as an underlayer, it is possible to provide a magnetic recording medium with excellent sliding resistance against a magnetic head.
上記目的は、磁気記録媒体用の基板面の下地層として5
硬度の低いCrNを用いるのではなく、非磁性で機械的
強度に優れた材料であるCr2N層,もしくは、Cr2
NとCrN の混合層を設け・ることによって達威され
る.
ここで,磁性層はCOを主たる戒分とする金属磁性層で
あるか、金属酸化物薄膜、金属窒化物薄膜であることが
望ましい。また、下地層と磁性層の間には、Cr,Mo
,W,Si,Ti,Ge,Cのいずれか一種からなる1
00〜5000入の中間層を設けてもよい。なお、耐摺
動性の観点から、Cr2Nを主成分とする下地層の厚さ
は0.05〜10.0μm、より望ましくは1.0μm
以上5.0μm以下にするのがよい。The above purpose is to use 5 as an underlayer on the substrate surface of a magnetic recording medium.
Instead of using CrN, which has low hardness, we use a Cr2N layer, which is a non-magnetic material with excellent mechanical strength, or a Cr2
This can be achieved by providing a mixed layer of N and CrN. Here, the magnetic layer is preferably a metal magnetic layer containing CO as a main component, a metal oxide thin film, or a metal nitride thin film. Moreover, between the underlayer and the magnetic layer, Cr, Mo
, W, Si, Ti, Ge, C.
An intermediate layer containing 0.00 to 5000 may be provided. In addition, from the viewpoint of sliding resistance, the thickness of the base layer mainly composed of Cr2N is 0.05 to 10.0 μm, more preferably 1.0 μm.
It is preferable to set the thickness to 5.0 μm or less.
磁気記録媒体用の基板はAQ−Mg合金が一般的であり
、この基板上に磁気ヘッドの粘着トラブルや摩擦係数の
低下を目的に円周方向にグループを設けたものにCr2
N を主成分とする下地層を形成した後、中間層及び磁
性層を形成してもよい.また、Cr2N を主或分とす
る下地層を形成後,下地層の表面に磁気ヘッドの粘着ト
ラブルや摩擦係数の低下を目的とした溝や凸状物を形成
してもよい。The substrate for magnetic recording media is generally made of AQ-Mg alloy, and Cr2 is added to this substrate with groups arranged in the circumferential direction for the purpose of preventing adhesion problems of the magnetic head and lowering the coefficient of friction.
After forming the underlayer containing N as a main component, the intermediate layer and the magnetic layer may be formed. Further, after forming an underlayer mainly composed of Cr2N, grooves or convex shapes may be formed on the surface of the underlayer for the purpose of preventing adhesion of the magnetic head and lowering the coefficient of friction.
本発明の磁気記録媒体は基盤上の下地層として、硬度の
劣るCrN層ではなく、磁気ヘッドとの接触時、あるい
は、衝突時にも磁気記録媒体の損傷を防止しうるだけの
機械的強度をもつ材料であるCr2N層、もしくは、C
r2N とCrNの混合層を用いて形成される。The magnetic recording medium of the present invention does not use a CrN layer, which has poor hardness, as the underlayer on the substrate, but has sufficient mechanical strength to prevent damage to the magnetic recording medium even when it comes into contact with a magnetic head or collides with it. The material Cr2N layer or C
It is formed using a mixed layer of r2N and CrN.
このため、下地層を形成した基盤上に、たとえば、物理
的気相析出法(PVD) 、代表的な方法はスパッタリ
ング法によって、中間層,磁性層,保護層、あるいは潤
滑層を形成すれば,磁気ヘッドの低浮上時にも、安定し
たヘッド浮揚状態を確保することのできる表面精度をも
ち、磁気ヘッドに対する耐摺動性に優れた磁気記録媒体
となる。For this reason, if an intermediate layer, magnetic layer, protective layer, or lubricant layer is formed on the base layer on which the underlayer is formed, for example, by physical vapor deposition (PVD), typically sputtering, The magnetic recording medium has a surface precision that can ensure a stable head flying state even when the magnetic head is flying at a low level, and has excellent sliding resistance against the magnetic head.
以下に本発明の実施例を挙げ、図面を参照しながら、さ
らに具体的に説明する。Embodiments of the present invention will be described below in more detail with reference to the drawings.
本発明の磁気記録媒体の基板材料はAQ合金,ガラス,
セラミックス,プラスチップ等を用いることができるが
、現在最も一般的で経済的に優れているものはAIJ合
金基板である。本発明の下地層の形成には物理的気相析
出法(P V D)、化学的気相析出法(CVD)、蒸
着法等を用いることができるが、現在では物理的気相析
出法(P V D)の一種であるスパッタリング法を用
いるので工業的規模で実施するのに好ましい。The substrate material of the magnetic recording medium of the present invention is AQ alloy, glass,
Although ceramics, plastic chips, etc. can be used, the most common and economically superior substrate at present is an AIJ alloy substrate. Physical vapor deposition (PVD), chemical vapor deposition (CVD), vapor deposition, etc. can be used to form the base layer of the present invention. Since it uses a sputtering method, which is a type of P V D), it is preferable to carry out on an industrial scale.
本発明のCr2N層,もしくは、Cr2NとCrNの混
合層を下地層として形成する際に、例えば.スパッタリ
ング法を用いる場合には、ターゲットとしてCrを用い
て.ArとN2の混合ガス中でスパツタし、いわゆる、
反応性スパッタによって基板上に下地層を形威すること
ができる。When forming the Cr2N layer of the present invention or a mixed layer of Cr2N and CrN as a base layer, for example. When using the sputtering method, Cr is used as the target. Spatters in a mixed gas of Ar and N2, so-called
An underlayer can be formed on the substrate by reactive sputtering.
Cr2N層、もしくは、Cr2NとCrNの混合層から
なる下地層は磁気ヘッドと磁気記録媒体の接触時の衝撃
に対しても磁性層の損傷を防止する必要があることから
、基板にAQ合金のような硬度の小さいものを用いた場
合には,下地層の厚さは少なくとも1μm以上必要であ
る。この下地層の厚さが増すほど耐摺動性は向上するが
、一方、膜厚の増大と共に膜応力が増大し、著しい場合
には、基板の変形が生じる恐れがあることや,また、経
済的に磁気記録媒体を生産するという観点からも膜厚は
必要以上に大きくすることは好ましくなく、膜厚は10
μm以下が望ましい。しかし、膜応力の低減や工業的規
模で高速に成膜できる手段が可能であれば、これ以上の
膜厚であっても、もちろん可能である。The underlayer consisting of a Cr2N layer or a mixed layer of Cr2N and CrN needs to prevent damage to the magnetic layer from shocks caused by contact between the magnetic head and the magnetic recording medium. If a material with low hardness is used, the thickness of the underlayer needs to be at least 1 μm or more. As the thickness of this base layer increases, the sliding resistance improves, but on the other hand, as the film thickness increases, the film stress also increases, and in severe cases, there is a risk of deformation of the substrate, and there are also economical problems. From the viewpoint of producing magnetic recording media in general, it is not preferable to make the film thicker than necessary;
It is desirable that the thickness be less than μm. However, if it is possible to reduce the film stress or to form a film at high speed on an industrial scale, it is of course possible to use a film thicker than this.
次に具体的な実施例により、さらに詳細に説明する.
く実施例1〉
本発明の一実施例を第1図により説明する。lは基板で
ありAfl−Mg合金が一般的であるが、ガラス,セラ
ミックス等を用いてもよい。2はCr2N層、もしくは
、Cr2NとCrNの混合層からなる下地層、3はCr
,Mo,W,Ti等からなる中間層、4はCoNi,C
oNiCr,CoNiP等から成る磁性層、5はC,S
iO2,SiC等からなる保護層、6はパーフロ口アル
キルエーテル鎖等をもつ有機物の潤滑層である。以下、
さらに詳細に本実施例について説明する。Next, a more detailed explanation will be provided using specific examples. Example 1> An example of the present invention will be described with reference to FIG. 1 is a substrate, which is generally made of Afl-Mg alloy, but glass, ceramics, etc. may also be used. 2 is a base layer consisting of a Cr2N layer or a mixed layer of Cr2N and CrN, and 3 is a Cr
, Mo, W, Ti, etc., 4 is CoNi, C
Magnetic layer made of oNiCr, CoNiP, etc., 5 is C, S
A protective layer 6 is made of iO2, SiC, etc., and a lubricating layer 6 is made of an organic substance having perfluoro-alkyl ether chains. below,
This example will be described in more detail.
外径130mmφ,内径40m,厚さ1.9mのAQ−
Mg合金基板1を用いて、RFマグネトロンスパッタリ
ング法により、基板温度160℃、RF投入電力600
W.ArとN2の全ガス圧5m Torr一定とし.
NZのガス分圧N2/(Ar+Nz )比を0.1,0
.2,0.3,0.4,0.5の条件に変化させて、C
rをターゲットとしてスパンタし膜厚2.5μmの下地
層を形或した。AQ- with outer diameter 130mmφ, inner diameter 40m, thickness 1.9m
Using the Mg alloy substrate 1, the substrate temperature was 160°C and the RF input power was 600 using the RF magnetron sputtering method.
W. The total gas pressure of Ar and N2 is kept constant at 5m Torr.
NZ gas partial pressure N2/(Ar+Nz) ratio is 0.1,0
.. By changing the conditions of 2, 0.3, 0.4, 0.5, C
A base layer having a thickness of 2.5 μm was formed by spuntering using r as a target.
次に、この下地層を形威したAQ−Mg合金基板上に、
Arガス雰囲気中で他は上記と同じ条件で、膜厚250
0人のCrからなる中間層3、膜厚600人のCoNi
Cr磁性層4、膜厚500人のCからなる保護層5を形
威した後、パーフロロアルキルエーテル鎖を含む液体潤
滑層6を5o入形成して磁気ディスクとした。Next, on the AQ-Mg alloy substrate with this underlayer,
Under the same conditions as above, in an Ar gas atmosphere, the film thickness was 250.
Intermediate layer 3 consisting of 0 Cr, film thickness 600 Cr CoNi
After forming a Cr magnetic layer 4 and a protective layer 5 made of carbon having a film thickness of 500 μm, a liquid lubricant layer 6 containing 5 μm of perfluoroalkyl ether chains was formed to obtain a magnetic disk.
本磁気ディスクの硬度をマイクロ硬度計を用い、ヌープ
圧子により測定荷重10gfで測定し,ヌープ硬度とN
z / (A r + N2)比の関係を第2図に示す
。下地層形成時のN z/ ( A r + N 2)
比が低いものほど、高硬度の磁気ディスクが得られた。The hardness of this magnetic disk was measured using a micro hardness meter with a Knoop indenter at a measuring load of 10 gf, and the Knoop hardness and N
The relationship between the z/(A r + N2) ratio is shown in FIG. N z / (A r + N 2) when forming the base layer
The lower the ratio, the harder the magnetic disk was obtained.
そこで、各磁気ディスクの下地層のみを形成した状態で
、薄膜X線分析をし、その回折ピークより各下地層の組
或を評価したところ、Nz/(Ar+N2)比0.2
以下では、その大部分がCr2Nで形成されていること
が判明し、このCr2N膜が磁気ディスクの硬度向上に
寄与していると推定された。また、磁気記録媒体はどれ
も,従来から用いられている無電解メッキ法で形成した
Ni −P膜を12μm形成して下地層2とし、その層
の上に上述の実施例とまったく同様の条件で、同じ構或
にして作成した磁気記録媒体の硬度は約600kg f
/ m”よりも高い硬度であった.このことより、下
地層をCr2N とCrNの混合層、望ましくは、Cr
2N層とすることで高硬度の磁気記録媒体が得られるこ
とが分かった。Therefore, thin film X-ray analysis was performed with only the underlayer formed on each magnetic disk, and the composition of each underlayer was evaluated from the diffraction peak. As a result, the Nz/(Ar+N2) ratio was 0.2.
Below, it was found that most of the film was made of Cr2N, and it was presumed that this Cr2N film contributed to improving the hardness of the magnetic disk. In addition, in all magnetic recording media, a 12 μm thick Ni-P film was formed by the conventionally used electroless plating method to form the base layer 2, and on top of that layer, the same conditions as in the above-mentioned example were applied. The hardness of a magnetic recording medium made with the same structure is approximately 600 kg f.
/ m”. From this, the underlayer is a mixed layer of Cr2N and CrN, preferably Cr
It was found that a magnetic recording medium with high hardness can be obtained by using a 2N layer.
本実施例で形成したCr2N層、もしくは、Cr2N
とCrNの混合層からなる下地層の強度は膜厚によって
変化する。基板にAQ−Mg合金を用いて、その上に下
地層をN2 / (A r + N2)比を0.1
と一定にして,膜厚を変えて形成した試料のヌープ硬度
を測定した。その結果を第3図に示す。磁気記録媒体の
下地層に用いるには、Cr2N を主成分とする下地層
の膜厚は、好ましくは2.0μm以上が必要であるが、
それでも、Ni−P膜の約1/6の膜厚でNi−P膜と
同等の硬度をもつ下地層となりうる。Cr2N layer formed in this example or Cr2N
The strength of the underlayer made of a mixed layer of CrN and CrN varies depending on the film thickness. AQ-Mg alloy is used as the substrate, and a base layer is formed on it with a N2/(A r + N2) ratio of 0.1.
The Knoop hardness of the samples was measured with the film thickness kept constant and the film thickness varied. The results are shown in FIG. To be used as an underlayer of a magnetic recording medium, the thickness of the underlayer containing Cr2N as a main component must preferably be 2.0 μm or more.
Even so, it can become a base layer with a thickness of about 1/6 of that of the Ni--P film and a hardness equivalent to that of the Ni--P film.
〈実施例2〉 第1図に示す構造の、別の実施例を次に述べる。<Example 2> Another embodiment of the structure shown in FIG. 1 will now be described.
外径130φ,内径40mφ,厚さ1.9++uのAQ
一Mg合金基板を用いて、DCマグネトロンスパッタリ
ング法により基板温度180℃、ArとN2の全ガス圧
6 mTorr.D C投入電力600W、Cr2N膜
の形成されやすいN2ガス分圧Nz/(Ar+N2)比
0.1一定として、膜厚2.0μmのおもにCr2N
を主成分とする下地層を形成した。次に、この下地層を
形威したAQ−Mg合金基板上に、Arガス雰囲気中で
他は上記と同じ条件で、膜厚2000入のCrからなる
中間層3、膜厚600入のCo N i C r磁性層
4、膜厚450大のCからなる保護層5を形成した後、
潤滑層6を60人形成して磁気ディスクとした。AQ with outer diameter 130φ, inner diameter 40mφ, thickness 1.9++u
Using a Mg alloy substrate, the substrate temperature was 180°C and the total gas pressure of Ar and N2 was 6 mTorr. DC input power is 600 W, the N2 gas partial pressure Nz/(Ar+N2) ratio, which tends to form a Cr2N film, is constant at 0.1, and the film thickness is 2.0 μm, mainly Cr2N.
A base layer containing as the main component was formed. Next, on the AQ-Mg alloy substrate on which this underlayer was formed, an intermediate layer 3 made of Cr with a thickness of 2000% and a CoN layer 3 with a thickness of 600% were deposited in an Ar gas atmosphere under the same conditions as above. After forming the iCr magnetic layer 4 and the protective layer 5 made of C with a film thickness of 450 mm,
The lubricating layer 6 was formed by 60 people to form a magnetic disk.
本磁気ディスクの硬度をマイクロ硬度計を用い、ヌープ
圧子により測定荷重10gfで測定した結果、そのスー
プ硬度は980kgf/m”となった。The hardness of this magnetic disk was measured using a microhardness meter with a Knoop indenter at a measuring load of 10 gf, and the soup hardness was 980 kgf/m''.
この硬度は、従来から用いられている無電解メッキ法で
形成したNi−P膜を12μm形成して下地層2とし、
その層の上に上記実施例とまったく同様の条件で、同じ
構成にして作製した磁気記録媒体の硬度と比較してまっ
たく遜色ないものであった。This hardness is determined by forming the base layer 2 by forming a 12 μm Ni-P film using the conventional electroless plating method.
The hardness was comparable to that of a magnetic recording medium produced on this layer under exactly the same conditions and with the same configuration as in the above example.
〈実施例3〉
第1図に示す構造の別の実施例を次に述べる.外径13
0mφ,内径40m+φ−,厚さ1.9aaのAfl−
Mg合金基板1を用いて、DCマグネトロンスパッタリ
ング法により基板温度150℃,ArとN2の全ガス圧
5mmTorr, Nzのガス分圧N2/(Ar+N2
)比0.1,DC投入電力600Wで膜厚3.0μmの
おもにCr2N を主成分とする下地層2を形成したあ
と.Arガス雰囲気中で他は上記と同条件で膜厚200
0λのCrからなる中間層3、膜厚600人のCoNi
Cr磁性膜4、膜厚500人のC保護層5を形成した後
、潤滑層6を60人形成して磁気ディスクとした。<Example 3> Another example of the structure shown in Figure 1 will be described below. Outer diameter 13
0mφ, inner diameter 40m+φ-, thickness 1.9aa Afl-
Using the Mg alloy substrate 1, the substrate temperature was 150°C, the total gas pressure of Ar and N2 was 5 mm Torr, and the gas partial pressure of Nz was N2/(Ar+N2
) after forming a base layer 2 mainly composed of Cr2N with a thickness of 3.0 μm at a ratio of 0.1 and a DC input power of 600 W. The film thickness was 200 mm in an Ar gas atmosphere under the same conditions as above.
Intermediate layer 3 made of Cr with a thickness of 0λ, CoNi with a film thickness of 600 μm
After forming the Cr magnetic film 4 and the C protective layer 5 with a film thickness of 500 layers, the lubricant layer 6 was formed with 60 layers to obtain a magnetic disk.
本磁気ディスクを相対速度13.5m/s 、浮上量
0.24μmとし, A Q gos − T i C
スライダー材の薄膜磁気ヘッドで記録再生する磁気デ
ィスク装置にセットして耐衝撃性を評価した結果、17
0G以上の衝撃に対しても再生時にエラーを生じたり、
クラツシュしたリせず良好な耐衝撃性を示した.また、
CSS試験でも三万回以上の寿命をもち、酎摺動性に優
れた磁気記録媒体であることが判明した.
以上の実施例において、基板1にAQ系基板を用いたが
、ポリイミドなどの有機物系基板,ガラス基板,AQz
Oaなどのセラミックス基板でも同様の効果が認められ
る。ただし、AQ系基板よりも硬度の大きい基板の場合
には、Cr2N層、もしくは、Cr・2NとCrN の
混合層からなる下地層の膜厚は、AQ系基板上よりも小
さくてよい。This magnetic disk has a relative speed of 13.5 m/s and a flying height of 0.24 μm.
As a result of evaluating the impact resistance by setting it in a magnetic disk device that records and plays with a thin film magnetic head made of slider material, 17
Impacts of 0G or higher may cause errors during playback,
It exhibited good impact resistance without crashing. Also,
The CSS test revealed that the magnetic recording medium had a lifespan of more than 30,000 cycles and had excellent sliding properties. In the above embodiments, an AQ-based substrate was used as the substrate 1, but organic substrates such as polyimide, glass substrates, AQz
A similar effect is also observed with ceramic substrates such as Oa. However, in the case of a substrate having greater hardness than the AQ-based substrate, the thickness of the underlying layer consisting of the Cr2N layer or a mixed layer of Cr.2N and CrN may be smaller than that on the AQ-based substrate.
本発明によれば、硬度が高く、基板との密着性に優れた
下地層を形成することができるため、磁気記録媒体の耐
衝撃性、耐摺動性を向上させる効果があり、信頼性の極
めて高い高性能磁気記録媒体を提供することができる。According to the present invention, it is possible to form an underlayer that has high hardness and excellent adhesion to the substrate, which has the effect of improving the impact resistance and sliding resistance of the magnetic recording medium, and improves reliability. An extremely high performance magnetic recording medium can be provided.
第1図は本発明の一実施例の断面図、第2図は磁気ディ
スクの硬度と下地層形成時のN2ガス分圧の関係を示す
グラフ、第3図は下地層材料の硬度と膜厚の関係を示す
グラフである。
1・・・基板、2・・・下地層、3・・・中間層、4・
・・磁性層、Nz/(AI−+ハ2)比Figure 1 is a cross-sectional view of an embodiment of the present invention, Figure 2 is a graph showing the relationship between the hardness of the magnetic disk and the partial pressure of N2 gas at the time of forming the underlayer, and Figure 3 is the hardness and film thickness of the underlayer material. It is a graph showing the relationship. DESCRIPTION OF SYMBOLS 1... Substrate, 2... Base layer, 3... Intermediate layer, 4...
...Magnetic layer, Nz/(AI-+Ha2) ratio
Claims (1)
層をもつ磁気記録媒体において、前記非磁性下地層はC
r_2N層もしくはCr_2NとCrNの混合層からな
ることを特徴とする磁気記録媒体。 2、請求項1において、前記磁性層と前記下地層の間に
Cr、Mo、W、Ti、C、Ge、及びSiからなる群
から選ばれた少なくとも一種の元素からなる中間層を形
成させたことを特徴とする磁気記録媒体。 3、請求項1において、前記磁性層がCoを主たる成分
とする金属薄膜であることを特徴とする磁気記録媒体。 4、請求項1において、前記下地層の膜厚が、1〜10
μmであることを特徴とする磁気記録媒体。 5、請求項2において、前記中間層の膜厚が500〜5
000Åであることを特徴とする磁気記録媒体。 6、請求項1において、前記基板は円周方向に沿つて形
成された制御された溝、あるいは、制御された凹凸が形
成されたものであることを特徴とする磁気記録媒体。 7、請求項1に記載の非磁性下地層を物理的気相析出法
により、金属ターゲットを用いて形成し、前記非磁性下
地層を用いて構成されたことを特徴とする磁気記録媒体
。 8、請求項1に記載の構造をもつ前記磁気記録媒体を組
み込んだ磁気記録装置。 9、請求項7においてN_2のガス分圧N_2/(Ar
+N_2)比を0.2以下にすることを特徴とする磁気
記録媒体の製造方法。[Claims] 1. In a magnetic recording medium having a nonmagnetic underlayer on a substrate and a magnetic layer on the underlayer, the nonmagnetic underlayer is made of C.
A magnetic recording medium comprising an r_2N layer or a mixed layer of Cr_2N and CrN. 2. In claim 1, an intermediate layer made of at least one element selected from the group consisting of Cr, Mo, W, Ti, C, Ge, and Si is formed between the magnetic layer and the underlayer. A magnetic recording medium characterized by: 3. The magnetic recording medium according to claim 1, wherein the magnetic layer is a metal thin film containing Co as a main component. 4. In claim 1, the thickness of the base layer is 1 to 10
A magnetic recording medium characterized in that it is μm. 5. In claim 2, the thickness of the intermediate layer is 500 to 5.
A magnetic recording medium characterized in that the thickness is 000 Å. 6. The magnetic recording medium according to claim 1, wherein the substrate has controlled grooves or controlled unevenness formed along the circumferential direction. 7. A magnetic recording medium characterized in that the nonmagnetic underlayer according to claim 1 is formed by a physical vapor deposition method using a metal target, and is constructed using the nonmagnetic underlayer. 8. A magnetic recording device incorporating the magnetic recording medium having the structure according to claim 1. 9. In claim 7, the gas partial pressure N_2/(Ar
+N_2) A method for manufacturing a magnetic recording medium, characterized in that the ratio is 0.2 or less.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16078589A JPH0329110A (en) | 1989-06-26 | 1989-06-26 | Magnetic recording medium and its manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16078589A JPH0329110A (en) | 1989-06-26 | 1989-06-26 | Magnetic recording medium and its manufacturing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0329110A true JPH0329110A (en) | 1991-02-07 |
Family
ID=15722398
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16078589A Pending JPH0329110A (en) | 1989-06-26 | 1989-06-26 | Magnetic recording medium and its manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0329110A (en) |
-
1989
- 1989-06-26 JP JP16078589A patent/JPH0329110A/en active Pending
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