JPH0329332A - Semiconductor device - Google Patents

Abstract

PURPOSE:To realize a high density and a thin shape by a method wherein a base member is left at the inside of a semiconductor element and an inner lead part of a copper-foil lead is formed on the base member. CONSTITUTION:In a semiconductor device where a semiconductor element 13 having bonding pads 15 is fixed, copper-foil leads 12 are formed in advance on a base member 11; opening parts 16 are formed in parts corresponding to the bonding pads 15; a formation face of the bonding pads 15 is bonded and fixed to a face on the opposite side of a formation face of the copper-foil leads 12. Wires 18 electrically connect the copper-foil leads 12 and the bonding pads 15. That is to say, the base member is not left around the semiconductor element 13; the semiconductor elements 13 can be mounted by narrowing the intervals between them. Thereby, a high-density mounting operation can be executed and a thin shape of the semiconductor device can be realized.

Description

DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] <<Industrial Application Field> The present invention relates to a semiconductor device for fixing a semiconductor element having bonding pads.

(Prior art) In response to the increase in the size of memory cards in recent years, there has been a demand for high-density mounting of a large number of semiconductor elements in a hexagonal shape.When mounting semiconductor elements on such memory cards, For example, there is a method of mounting a semiconductor element on a male circuit board using a semiconductor device (carrier film) in which a semiconductor element is connected by inner leads to a tape-like film on which copper foil is previously formed.

The conventional structure of the above semiconductor device (carrier film) will be explained with reference to FIG.

In FIG. 6, 61 is a carrier film. Copper leads 62 are formed in advance on this carrier film 61 except for the area where the semiconductor element 63 is mounted. The semiconductor cable 63 is fixed onto the carrier film 61 by means such as adhesive so that the bonding pad 65 is positioned near the end 64 of the plurality of copper wire leads 62. Then, the end 64 of the copper foil lead 62 and the bonding pad 65 are connected by a wire 66 (inner lead connection). A hole 67 for cutting an outer lead is formed.

FIG. 7 is an explanatory diagram illustrating the manufacturing process of the semiconductor device of FIG. 6.

In FIG. 7, (a) shows a copper foil lead type carrier film, (b) shows a carrier film to which a semiconductor element has been bonded, and (C) shows a carrier film as a finished product.

The carrier film 61 for supplying the semiconductor element 63 in this manner is arranged so that the end portion (inner lead connection portion) 64 of the copper foil lead 62 is located outside the semiconductor element 62 as shown in FIG. 66 is drawn out from the bonding pad 65 inside the semiconductor element 62 and connected to the inner lead connection portion 64 of the copper foil lead 62 . Next, the surface of the semiconductor element 63 where the bonding pad 65 is formed and its surrounding area (inner lead connection portion 64,
(including the gold wire 66) is coated with a moisture-proofing resin 68, as shown in FIG. 7(C).

FIG. 8 is an enlarged view of part 8 of FIG. 7 with the wires connected.

As shown in this figure, the wire 66 may be made of, for example, a gold wire. A gold ball 71 is formed on the pad 65a of the bonding pad 65 which is ball-bonded with gold wire, and the inner connection portion 6 of the copper foil bond 62 is formed on the pad 65a.
4 is connected to one end of the gold lead portion 72 by crimping. However, in the wire bonding method shown in FIG. 8, the gold lead part 72 and the copper foil lead connection part 64 are located at a lower position than the connection part between the bonding pad 65 and the gold ball 71, so the wire 66 that once extended upward is moved downward. When extending, the neck portion 7 between the gold ball 71 and the gold lead portion 72
3 is subjected to stress, which may cause the ll7i line.

For this reason, the height h1 of the bonding loop (the circular part that rotates from the pad surface until it returns to the same height as the pad surface) can be reduced to only about 0.2 m, which reduces the height of the semiconductor element after cutting the carrier film. Make it bigger.

Further, when a semiconductor element as shown in FIG. 6 is connected with an outer lead, the result is as shown in FIG. 9.

In FIG. 9, the copper foil lead 62 is cut along the dotted line in FIG. 6, the cut end 69 is formed into a predetermined shape, and then mounted on a circuit board. In such an outer lead connection, the carrier film 61 must be left on the outer periphery 61' of the semiconductor element 63 because the inner lead connection portion 64 of the copper foil lead described above is located outside the Jf conductor element.

The remaining outer peripheral edge 61' prevents the semiconductor elements 63 from being disposed close to each other, resulting in a reduction in packaging density. In FIG. 9, the width D2 of the outer peripheral edge 61' is required to be small. However, the width D1 for forming
and the width D2 of the semiconductor element outer peripheral edge 61' of the carrier film.
It is difficult in manufacturing to narrow the width D3 including the width D3.

(Problems that the invention is trying to solve) In the conventional semiconductor device described above, a carrier film is left around the semiconductor element, and when it is mounted on a circuit board, there is a problem of reducing the packaging density, and the bonding pad and metal The wire at the joint of the ball becomes a loop,
There was a problem with the thickness and jt of the carrier film that the thickness at the time of mounting became large.

SUMMARY OF THE INVENTION Therefore, an object of the present invention is to eliminate the above-mentioned problems and provide a semiconductor device with high-density and thin packaging.

[Structure of the Invention] (Means for Solving Problem i!1) The present invention provides a semiconductor device for fixing a semiconductor element with a bonding pad, in which a base member has copper foil leads formed in advance. At the same time, an opening is formed in a portion corresponding to the bonding pad, and the bonding pad forming surface is adhesively fixed to the surface opposite to the copper foil lead forming surface. The wire number is characterized by electrically connecting the copper foil lead and the bonding pad.

(Function) According to this configuration, the base member remains inside the semiconductor element, and by forming the copper foil inner lead portion on the base member, the base member does not remain around the semiconductor element. do not have. This allows the semiconductor elements to be mounted with narrower spacing than before, allowing higher-density packaging.

In addition, when making inner lead connections, the bonding loop that protrudes above the semiconductor device should be lower in height since the bonding area between the wire and the copper foil lead is located higher than the bonding pad and the wire. I can do it. This allows the semiconductor device to be made thinner.

(Example> Embodiments of the present invention will be described below with reference to the drawings.

FIG. 1 is a plain view, not showing an embodiment of a semiconductor device according to the present invention.

In FIG. 1, 11 is a base member (carrier film) with a thickness of about 0.1ag, 12 is a copper foil lead, 13 is a semiconductor element, 14 is an end of the copper wire lead, and 15 is a bonding member for the semiconductor element 13. It's bad.

The carrier film 11 has openings formed in portions corresponding to the bonding pads 15 .

Then, the surface of the semiconductor element 13 on which the bonding pads 15 are formed is adhesively fixed to the surface of the carrier film 11 opposite to the surface on which the copper foil leads 12 are formed.

The ends (inner lead connection parts) 14.14 of the two groups of gold-plated copper foil leads 12.12 formed on the upper surface of the carrier film 11 are provided inside the bonding pad rows 15.15 of the semiconductor cable 13. Yes, copper foil lead 12
It extends from the inner lead connecting portion 14 to the outer lead portion 17 on the outside of the semiconductor element 13 through between adjacent bonding pads 15 . Each of these sets of bonding pads 15 connects a wire 1 to the inner lead connection portion 14.
8 (inner lead connection). In the outer lead portion 17, an outer lead cutting hole 19 is formed by cutting out the carrier film 11. Furthermore, this outer lead cutting hole 19
and the opening are in communication; FIG. 2 is an explanatory diagram illustrating the manufacturing process of the semiconductor device of FIG. 1.

In FIG. 2, (a) shows a copper foil lead type carrier film, (b) shows a carrier film with semiconductor elements bonded thereto, and (C) shows a finished product of a rear film.

In the manufacturing process of a semiconductor device, first, a carrier film 11 is coated with a resist, exposed to light, and developed, and then a copper foil lead (pattern) 12 is formed by an etching method.
Thereafter, the resist is removed to produce a carrier film 31 with copper foil leads formed thereon, as shown in FIG. 2(a).

Next, as shown in FIG. 2(b), the carrier film 11
The surface of the semiconductor cord 13 on which the bonding pad 15 is formed is adhered to the surface of the semiconductor cord 13 attaching portion 11a opposite to the surface on which the copper foil lead 12 is formed, via a silver thread conductive adhesive 32. Further, the inner lead portion 14 of the copper foil board 12 is connected to the bonding pad 15 via a wire 18 (inner lead connection).

Subsequently, as shown in FIG. 2(C), an epoxy thermosetting resin 33 is applied to the bonding pad 15 (including the wire 18 and the inner lead connection portion 14) of the semiconductor cable 13.
is applied. Thereby, the semiconductor element 13 is mechanically protected and moisture-proofed.

FIG. 3 is an enlarged view of part B of FIG. As shown in this figure, 41 is a gold ball, 42 & a gold wire lead portion. A gold ball 41 is formed on the bonding pad 15 of the semiconductor element 13, and a gold wire lead portion 42 is extended from the gold ball 41 to form the inner lead connection portion 1 of the copper lead.
The inner lead is connected to 4. In this case, since the joint between the gold wire lead part 42 and the inbu lead connection part 14 is located at a higher position than the joint between the bonding pad 15 and the gold ball 41, the gold wire lead part 4
The curvature of the bonding loop 43 formed when extending the gold wire lead part 42 downward is not made too large. Therefore, when the gold wire lead part 42 is extended downward, Not much stress is applied to the neck portion 44 between the two.Furthermore, the height h11 of the bonding loop protruding onto the carrier film 11 is set to h11=0.
It can be made about 1 mm, and the veneer pressure h 12=
0. 1 rm and tip pressure i13=0. 4
The total pressure h14 including 5mts is h14-0.65#
It becomes lffi. As a result, the total pressure becomes 0.1 rMR lower than the conventional total pressure shown in FIG. 1, and it becomes possible to form a semiconductor device into a mold.

In the above semiconductor device, the copper foil lead 12 is cut at the angle shown by the dashed line in FIGS. 1 and 2(C), and the carrier film 11 is also cut at the angle shown by the dashed line in FIG. The carrier film 11' remaining after cutting hardly protrudes to the outer periphery of the semiconductor element. Thereafter, copper foil leads are formed, the carrier film 11' is reversed, and the circuit board is mounted.

FIG. 4 is a side view showing the semiconductor device of FIG. 2 mounted on a circuit board.

As shown in this figure, the lead-formed copper foil lead 12 is soldered (outer lead connection) to the connection part 35 of the circuit board 34 using solder 36. Here, the outer lead part 17's law D11 = 1.5,
The distance from the tip of the inner lead connecting portion 14 to the side surface of the semiconductor element 13 [)12=2. C) It is s. Of these, only the outer lead portion 17 protrudes to the outside of the semiconductor element 13. This enables high-density packaging of semiconductor elements.

Although the above embodiment describes a semiconductor device in which bonding pads are formed on two sides, it is clear that the same effect can be obtained even when applied to a semiconductor device in which bonding pads are formed on four sides. be.

FIG. 5 is a plan view of a semiconductor device showing another embodiment of the present invention.

In FIG. 5, 51 is a carrier film. 52
5 is a copper foil lead, 53 is a semiconductor element, and 54 is a copper foil lead 5.
2 inner lead connection part at the tip, 55 is a semiconductor element 53
This is a bonding pad installed in the

An opening 56 is provided in a portion of the carrier film 51 corresponding to the bonding pad 55. Inner lead connection portions 54 and 54 of two groups of gold-plated copper leads 52 and 52 formed on the upper surface of the carrier film 51
is provided inside the bonding pad 55.55 of the semiconductor element 53, and the copper foil lead 52.52 passes from this inner lead connection portion 54.54 through the unshaped side of the bonding pad 55. , is exposed at the seventh outer lead portion 57 on the outside of the semiconductor element 53.

Each set of bonding pads 55 is connected via a wire 58 (inner lead connection). and,
The outer lead portion 57 has an outer lead cutting hole 59 formed by cutting out the carrier film.

Even in such a configuration, the inner lead connection portion 54
can be placed inside the semiconductor element 53, and when making an inner lead connection, the lead part and the inner lead connection part 54 can be connected to each other rather than the joint part between the bonding pad 55 and the gold ball.
Since the joint portion is located at a higher position, the same effect as in the embodiment shown in FIG. 1 can be obtained. In addition, the embodiment shown in FIG.
Can be applied.

Further, in the embodiment shown in FIG. 1, the base member 11 includes:
In addition to the carrier film, another member (for example, a normal circuit board) may be used to directly mount the circuit board on the circuit board.

[Effects of the Invention] As described above, according to the present invention, higher density packaging than before is possible without complicating the wire bonding process. It is also possible to make the conductor device thinner.

[Brief explanation of drawings]

FIG. 1 is a plan view showing an embodiment of the semiconductor device t7 according to the present invention, FIG. 2 is an explanatory diagram explaining the manufacturing process of the semiconductor device shown in FIG. Enlarged view of B, No. 4
The figure is a side view showing the state in which the semiconductor device of FIG. 2 is mounted on a circuit board, FIG. 5 is a plan view of a semiconductor neck showing another embodiment of the present invention, and FIG. 7 is an explanatory diagram illustrating the manufacturing process of the semiconductor device in FIG. 6, FIG. 8 is an enlarged view of part A in FIG. 7, and FIG. FIG. 3 is a side view showing a state where the device is mounted on a circuit board. 11...Carrier film, 12...Copper foil lead,
13... Semiconductor element, 14... Inner lead connection part, 15... Bonding pad,... Opening part, 1
7... Outer lead part, 19... Wire.

Claims (1)

[Claims] In a semiconductor device for fixing a semiconductor element having a bonding pad, a copper foil lead is formed in advance, and an opening is formed in a portion corresponding to the bonding pad, so that the surface on which the bonding pad is formed is formed. A semiconductor device comprising: a base member adhesively fixed to a surface opposite to the surface on which the copper foil lead is formed; and a wire electrically connecting the copper foil lead and the bonding pad.