JPH0330306B2 - - Google Patents

Info

Publication number
JPH0330306B2
JPH0330306B2 JP59278879A JP27887984A JPH0330306B2 JP H0330306 B2 JPH0330306 B2 JP H0330306B2 JP 59278879 A JP59278879 A JP 59278879A JP 27887984 A JP27887984 A JP 27887984A JP H0330306 B2 JPH0330306 B2 JP H0330306B2
Authority
JP
Japan
Prior art keywords
region
semiconductor
semiconductor region
insulated gate
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59278879A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60246662A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP59278879A priority Critical patent/JPS60246662A/ja
Publication of JPS60246662A publication Critical patent/JPS60246662A/ja
Publication of JPH0330306B2 publication Critical patent/JPH0330306B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/711—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using bipolar transistors as protective elements

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP59278879A 1984-12-28 1984-12-28 半導体装置 Granted JPS60246662A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59278879A JPS60246662A (ja) 1984-12-28 1984-12-28 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59278879A JPS60246662A (ja) 1984-12-28 1984-12-28 半導体装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP50117710A Division JPS5916413B2 (ja) 1975-10-01 1975-10-01 半導体装置

Publications (2)

Publication Number Publication Date
JPS60246662A JPS60246662A (ja) 1985-12-06
JPH0330306B2 true JPH0330306B2 (fr) 1991-04-26

Family

ID=17603384

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59278879A Granted JPS60246662A (ja) 1984-12-28 1984-12-28 半導体装置

Country Status (1)

Country Link
JP (1) JPS60246662A (fr)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH599085A5 (fr) * 1974-03-01 1978-05-12 Hoffmann La Roche

Also Published As

Publication number Publication date
JPS60246662A (ja) 1985-12-06

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