JPH0331082Y2 - - Google Patents

Info

Publication number
JPH0331082Y2
JPH0331082Y2 JP6472882U JP6472882U JPH0331082Y2 JP H0331082 Y2 JPH0331082 Y2 JP H0331082Y2 JP 6472882 U JP6472882 U JP 6472882U JP 6472882 U JP6472882 U JP 6472882U JP H0331082 Y2 JPH0331082 Y2 JP H0331082Y2
Authority
JP
Japan
Prior art keywords
wafer
suction
concentric
suction hole
groove
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP6472882U
Other languages
Japanese (ja)
Other versions
JPS58168139U (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP6472882U priority Critical patent/JPS58168139U/en
Publication of JPS58168139U publication Critical patent/JPS58168139U/en
Application granted granted Critical
Publication of JPH0331082Y2 publication Critical patent/JPH0331082Y2/ja
Granted legal-status Critical Current

Links

Description

【考案の詳細な説明】 「産業上の利用分野」 この考案は、半導体ウエハの加工や検査の工程
において使用する吸着保持装置に関するものであ
る。
[Detailed Description of the Invention] "Industrial Application Field" This invention relates to a suction and holding device used in the process of processing and inspecting semiconductor wafers.

「従来の技術」 半導体ウエハを数条の同心円状溝に吸引孔を設
けてなる試料台に保持するに当たり、従来、大き
さの異なる半導体ウエハを試料台に吸着しようと
する際には、上記ウエハの大きさに合わせて試料
台の条件を変える作業が必要であつた。
"Prior Art" Conventionally, when trying to suction semiconductor wafers of different sizes onto a sample stand, when holding a semiconductor wafer on a sample stand consisting of several concentric grooves with suction holes, the wafer It was necessary to change the conditions of the sample stage according to the size of the sample.

「考案が解決しようとする問題点」 すなわち、半導体ウエハの加工や検査の工程に
おいては、加工ないし検査すべき半導体ウエハの
種類が異なる度に、上記ウエハの大きさに合わせ
て予め不要な吸引孔や溝等を塞いだり、あるいは
試料台を回転して真空圧導路との連結を変えるこ
とにより、不要な吸引孔や溝を塞ぐ作業が必要で
あつた。
``Problem that the invention seeks to solve'' In other words, in the process of semiconductor wafer processing and inspection, each time the type of semiconductor wafer to be processed or inspected changes, unnecessary suction holes are created in advance according to the size of the wafer. It was necessary to close unnecessary suction holes and grooves, or by rotating the sample stage and changing the connection with the vacuum pressure channel.

この考案の半導体ウエハの吸着保持装置は、吸
着すべきウエハが変化しても、予め何等上記のよ
うな作業は必要とせず、ウエハを吸着できるもの
である。
The semiconductor wafer suction/holding device of this invention is capable of suctioning a wafer even if the wafer to be suctioned changes, without requiring any of the above-mentioned operations in advance.

「問題点を解決するための手段」 この考案の半導体ウエハの吸着保持装置は、そ
の一実施例を示す第1図ないし第4図において、
試料台1の表面には数条の同心円状溝2ないし8
を穿設し、最小径ウエハ13を吸着する面積内の
複数の第1の同心円状溝5ないし8内には、それ
ぞれ第1の吸引孔9を複数個設け、もつとも外側
の同心円状溝2内に収容される、より大きい径の
ウエハ23ないし43を吸着する面積内の、第2
の同心円状溝2ないし4の一つの溝には第2の吸
引孔10を設け、第2の同心円状溝2ないし4を
上記第2の吸引孔10と同じ断面積に穿設した縦
溝11および12で連結することにより、予め何
等の作業、設定をすることなく試料台1にウエハ
を吸着できるようにしたことを特徴とするもので
ある。
``Means for Solving the Problems'' The semiconductor wafer suction and holding device of this invention is shown in FIGS. 1 to 4 showing one embodiment thereof.
Several concentric grooves 2 to 8 are formed on the surface of the sample stage 1.
A plurality of first suction holes 9 are provided in each of the plurality of first concentric grooves 5 to 8 within the area for sucking the smallest diameter wafer 13. The second wafer within the area that attracts the larger diameter wafers 23 to 43 accommodated in the
A second suction hole 10 is provided in one of the concentric grooves 2 to 4, and a vertical groove 11 is formed in which the second concentric groove 2 to 4 has the same cross-sectional area as the second suction hole 10. and 12, the wafer can be sucked onto the sample stage 1 without any work or setting in advance.

「実施例」 以下図面に基いてこの考案の半導体ウエハの吸
着保持装置の一実施例を説明する。
``Embodiment'' An embodiment of the semiconductor wafer suction and holding device of this invention will be described below with reference to the drawings.

第1図において1は試料台で、その表面には同
心円状溝2,3,4,5,6,7,8が穿設して
ある。そのうちで吸着しようとする最も小さな径
のウエハ13の外形以内の第1の同心円状溝5,
6,7,8には、各溝内に真空圧を導入すべき第
1の吸引孔9が複数あけられていて、各吸引孔9
は真空圧導路14により継がつている。上記最小
径ウエハ13の径より少し大きい径の第2の同心
円状溝4には、単一の第2の吸引孔10があり、
吸引孔がない他の第2の同心円状溝2,3は、上
記第2の吸引孔10の場所において縦溝11,1
2を介して同心円状溝4と継がつている。
In FIG. 1, reference numeral 1 denotes a sample stage, on the surface of which concentric grooves 2, 3, 4, 5, 6, 7, and 8 are bored. A first concentric groove 5 within the outer shape of the wafer 13 with the smallest diameter to be adsorbed;
6, 7, and 8 are provided with a plurality of first suction holes 9 to introduce vacuum pressure into each groove, and each suction hole 9
are connected by a vacuum pressure path 14. The second concentric groove 4 having a diameter slightly larger than the diameter of the minimum diameter wafer 13 has a single second suction hole 10;
The other second concentric grooves 2, 3 without a suction hole are the vertical grooves 11, 1 at the location of the second suction hole 10.
It is connected to the concentric groove 4 via the groove 2.

次に実際に4種類の径の違うウエハを吸着しよ
うとする場合を、第2図ないし第4図に示す。ま
ず、吸着しようとするウエハが最小径の場合、第
2図においてウエハ13は第1の同心円状溝5,
6,7,8を塞いで載置される。この各溝内には
複数個の第1の吸引孔9と真空圧導路14を介し
て真空圧が導入される。この場合第2の吸引孔1
0より若干の空気が真空圧導路14には導入され
るが、この第2の吸引孔10の断面積はウエハ1
3を吸着するに十分な吸着力を要する真空圧に比
較して、洩れてもかまわない大きさである。その
一例としてそれぞれの溝内には第1の吸引孔9を
複数個設け、他方第2の吸引孔10を第2の同心
円状溝4内に1箇所のみ設けている。
Next, a case in which four types of wafers with different diameters are actually picked up is shown in FIGS. 2 to 4. First, when the wafer to be picked up has the smallest diameter, the wafer 13 is placed in the first concentric groove 5, as shown in FIG.
6, 7, and 8 are closed. Vacuum pressure is introduced into each groove via a plurality of first suction holes 9 and a vacuum pressure conduit 14. In this case, the second suction hole 1
Although a little more than 0 air is introduced into the vacuum pressure guide path 14, the cross-sectional area of this second suction hole 10 is smaller than that of the wafer 1.
Compared to the vacuum pressure that requires sufficient adsorption force to adsorb 3, the size is such that it does not matter if it leaks. As an example, a plurality of first suction holes 9 are provided in each groove, and only one second suction hole 10 is provided in the second concentric groove 4.

第3図はより大きな径のウエハ23を吸着する
場合を示す。このウエハ23は第2の同心円状溝
4および、第1の同心円状溝5,6,7,8を塞
いで載置される。第2図と同様に真空圧導路14
を介して真空圧が導入されると、ウエハ23は試
料台1に吸着される。この場合、縦溝11より若
干の空気が導路14に導入されるが、この縦溝1
1の断面積を第2の吸引孔10の断面積とほぼ同
一にすることにより、第2図のウエハ13を吸着
するときと同様の条件下でウエハ23を吸着でき
る。
FIG. 3 shows a case where a wafer 23 with a larger diameter is picked up. This wafer 23 is placed so as to close the second concentric groove 4 and the first concentric grooves 5, 6, 7, and 8. Vacuum pressure conduit 14 as in FIG.
When vacuum pressure is introduced through the wafer 23, the wafer 23 is attracted to the sample stage 1. In this case, some air is introduced into the guide path 14 from the vertical groove 11, but this vertical groove 1
By making the cross-sectional area of the second suction hole 10 substantially the same as the cross-sectional area of the second suction hole 10, the wafer 23 can be suctioned under the same conditions as when the wafer 13 of FIG. 2 is suctioned.

第4図はより大きな径のウエハ33を吸着する
場合を示す。ウエハ33は第2の同心円状溝3,
4および、第1の同心円状溝5,6,7,8を塞
いで載置される。この場合、もつとも外側の同心
円状溝2から縦溝12より若干の空気が導路14
に導入されるが、縦溝12の断面積を第2の吸引
孔10の断面積とほぼ同一にすることにより、第
2図のウエハ13を吸着するときと同様の条件下
でウエハ33を吸着できる。勿論、第2の吸引孔
10および縦溝11,12の形状等は、上記目的
を達成できるものであればこれにとどまることな
く、任意に選択することができる。
FIG. 4 shows a case where a wafer 33 with a larger diameter is attracted. The wafer 33 has a second concentric groove 3,
4 and the first concentric grooves 5, 6, 7, and 8 are closed. In this case, some air flows from the outer concentric groove 2 to the vertical groove 12 into the guide path 14.
However, by making the cross-sectional area of the vertical groove 12 almost the same as the cross-sectional area of the second suction hole 10, the wafer 33 can be suctioned under the same conditions as when the wafer 13 in FIG. 2 is suctioned. can. Of course, the shapes of the second suction hole 10 and the vertical grooves 11, 12 are not limited to these and can be arbitrarily selected as long as the above objectives can be achieved.

「考案の効果」 この考案は以上のように構成したので、最小径
のウエハより最大径のウエハまでの多種類のウエ
ハを吸着する場合、予め何等の作業設定を全く必
要とせず吸着することができる。また第2の吸引
孔10の断面積と縦溝11もしくは12の断面積
をほぼ同一にすることにより、簡単な構造でかつ
正確に所望の吸着力を得ることができる。
"Effect of the invention" Since this invention is configured as described above, when picking up various types of wafers from the smallest diameter wafer to the largest diameter wafer, it is possible to pick up wafers without any work settings being required in advance. can. Further, by making the cross-sectional area of the second suction hole 10 and the cross-sectional area of the vertical groove 11 or 12 substantially the same, it is possible to obtain a desired suction force accurately with a simple structure.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図はこの考案の一実施例を示す平面図、第
2図ないし第4図は第1図のA−A線断面図で、
第2図は最小径のウエハを吸着する場合、第3図
は最小径のウエハより若干大きいウエハを吸着す
る場合、第4図は最大径ウエハを吸着する場合を
それぞれ示す。 1……試料台、2,3,4……第2の同心円状
溝、5,6,7,8……第1の同心円状溝、9…
…第1の吸引孔、10……第2の吸引孔、11,
12………縦溝、13……ウエハ、14……真空
圧導路。
FIG. 1 is a plan view showing an embodiment of this invention, and FIGS. 2 to 4 are cross-sectional views taken along line A-A in FIG.
FIG. 2 shows a case where a wafer with the smallest diameter is picked up, FIG. 3 shows a case where a wafer slightly larger than the smallest diameter wafer is picked up, and FIG. 4 shows a case where a wafer with the largest diameter is picked up. 1... Sample stage, 2, 3, 4... Second concentric groove, 5, 6, 7, 8... First concentric groove, 9...
...First suction hole, 10...Second suction hole, 11,
12... Vertical groove, 13... Wafer, 14... Vacuum pressure guide.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 試料台の表面に数条の同心円状溝を穿設し、最
最小径ウエハを吸着する面積内の複数の第1同心
円状溝内には、それぞれ第1の吸引孔を複数個設
け、もつとも外側の同心円状溝内に収容される、
より大きい径のウエハを吸着する面積内の、複数
の第2同心円状溝の一つの溝には第2の吸引孔を
設け、第2の同心円状溝を上記第2の吸引孔と同
じ断面積に穿設した縦溝で連結することにより、
予め何等の作業、設定をすることなく試料台にウ
エハを吸着できるようにしたことを特徴とする半
導体ウエハの吸着保持装置。
Several concentric grooves are bored on the surface of the sample stage, and a plurality of first suction holes are provided in each of the first concentric grooves within the area that attracts the smallest diameter wafer. housed within concentric grooves of the
A second suction hole is provided in one of the plurality of second concentric grooves within the area for suctioning a wafer with a larger diameter, and the second concentric groove has the same cross-sectional area as the second suction hole. By connecting with vertical grooves drilled in the
A semiconductor wafer suction/holding device characterized by being able to suction a wafer to a sample stage without any work or setting in advance.
JP6472882U 1982-04-30 1982-04-30 Semiconductor wafer suction holding device Granted JPS58168139U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6472882U JPS58168139U (en) 1982-04-30 1982-04-30 Semiconductor wafer suction holding device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6472882U JPS58168139U (en) 1982-04-30 1982-04-30 Semiconductor wafer suction holding device

Publications (2)

Publication Number Publication Date
JPS58168139U JPS58168139U (en) 1983-11-09
JPH0331082Y2 true JPH0331082Y2 (en) 1991-07-01

Family

ID=30074742

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6472882U Granted JPS58168139U (en) 1982-04-30 1982-04-30 Semiconductor wafer suction holding device

Country Status (1)

Country Link
JP (1) JPS58168139U (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2821678B2 (en) * 1997-04-07 1998-11-05 株式会社ニコン Substrate suction device
JP2016096294A (en) * 2014-11-17 2016-05-26 株式会社ディスコ Suction pad

Also Published As

Publication number Publication date
JPS58168139U (en) 1983-11-09

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