JPH0331449A - Fe-ni alloy for lead frame - Google Patents
Fe-ni alloy for lead frameInfo
- Publication number
- JPH0331449A JPH0331449A JP16458289A JP16458289A JPH0331449A JP H0331449 A JPH0331449 A JP H0331449A JP 16458289 A JP16458289 A JP 16458289A JP 16458289 A JP16458289 A JP 16458289A JP H0331449 A JPH0331449 A JP H0331449A
- Authority
- JP
- Japan
- Prior art keywords
- alloy
- lead frame
- thermal expansion
- less
- expansion coefficient
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910000990 Ni alloy Inorganic materials 0.000 title description 2
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 30
- 239000000956 alloy Substances 0.000 claims abstract description 30
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 claims abstract description 8
- 239000012535 impurity Substances 0.000 claims abstract description 6
- 239000000203 mixture Substances 0.000 claims description 9
- 239000011347 resin Substances 0.000 abstract description 19
- 229920005989 resin Polymers 0.000 abstract description 19
- 229910052710 silicon Inorganic materials 0.000 abstract description 16
- 239000000463 material Substances 0.000 abstract description 13
- 238000007789 sealing Methods 0.000 abstract description 10
- 229910052748 manganese Inorganic materials 0.000 abstract description 9
- 229910052802 copper Inorganic materials 0.000 abstract description 8
- 229910052759 nickel Inorganic materials 0.000 abstract description 7
- 229910052790 beryllium Inorganic materials 0.000 abstract description 4
- 229910052742 iron Inorganic materials 0.000 abstract description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 239000011572 manganese Substances 0.000 description 8
- 239000010949 copper Substances 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 7
- 238000010521 absorption reaction Methods 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 238000005096 rolling process Methods 0.000 description 4
- 238000000137 annealing Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 229910052717 sulfur Inorganic materials 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
- 229910002091 carbon monoxide Inorganic materials 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 229910000833 kovar Inorganic materials 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 230000007257 malfunction Effects 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910020598 Co Fe Inorganic materials 0.000 description 1
- 229910002519 Co-Fe Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 229910003271 Ni-Fe Inorganic materials 0.000 description 1
- 229910018106 Ni—C Inorganic materials 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- -1 first Substances 0.000 description 1
- 238000005242 forging Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000010583 slow cooling Methods 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
Landscapes
- Lead Frames For Integrated Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
「産業上の利用分野」
本顆発明は、tC用リードフレーム材料として好適なF
e−N i合金に関し、FeとNiとCOとMnとS
iとCuを特定量含有する合金にBeを特定量添加する
ことによって低熱膨張率と優れた樹脂密着性を有するよ
うにしたものである。DETAILED DESCRIPTION OF THE INVENTION "Field of Industrial Application" The present invention is directed to F
Regarding e-Ni alloy, Fe, Ni, CO, Mn and S
By adding a specific amount of Be to an alloy containing specific amounts of i and Cu, it has a low coefficient of thermal expansion and excellent resin adhesion.
「従来の技術」
近年、集積度の高い大規模集積回路(LSI)や超大規
模集積回路(超LSI)などの開発が盛んとなってきて
いるが、このようなLSIや超LSIにおいては、シリ
コン素子が大型化し、発熱量も多くなってきている。従
ってシリコン素子とリードフレームとの間の熱膨張率の
差異が大きい場合は、通電発熱によるリードフレームの
膨張と収縮によりシリコン素子が熱ストレスを受けて割
れたり、亀裂を生じたりするおそれがある。そこでLS
Iや超LSI用などのリードフレーム材料にあっては、
特にその熱膨張率をシリコン素子の熱膨張率に近付ける
必要がある。"Conventional technology" In recent years, the development of highly integrated large-scale integrated circuits (LSI) and very large-scale integrated circuits (very large-scale integrated circuits) has become active. Elements are becoming larger and generating more heat. Therefore, if the difference in coefficient of thermal expansion between the silicon element and the lead frame is large, there is a risk that the silicon element will be subject to thermal stress due to the expansion and contraction of the lead frame due to the heat generated by electricity, and may break or crack. So L.S.
For lead frame materials such as I and VLSI,
In particular, it is necessary to bring the coefficient of thermal expansion close to that of the silicon element.
このため従来から、リードフレーム用の材料においては
、シリコン素子などに作用する熱応力を緩和することを
目的とした低熱膨張率のF e−N i合金として、4
2 A 1loy(42%N i−F e)(特開昭5
5−119156号など)、コバール(29%N+−1
7%Co−Fe)、および、低膨張コバール(29%N
i−13%G o−F e)(特開昭59−19874
1号)などが知られている。For this reason, lead frame materials have traditionally been made of 4-Fe-Ni alloy, which has a low coefficient of thermal expansion and is intended to alleviate the thermal stress that acts on silicon elements.
2 A 1loy (42% Ni-Fe) (Unexamined Japanese Patent Publication No. 5
5-119156 etc.), Kovar (29%N+-1
7% Co-Fe) and low expansion Kovar (29% N
i-13%G o-F e) (Japanese Unexamined Patent Publication No. 1987-19874
No. 1) is known.
「発明が解決しようとする課題」
ところが、最近、I0.LSIなどの大型化とともに、
実装の小型化に伴い、面実装タイプのリードフレームや
チップサイズの大きなリードフレームなどにおいて、ア
ッセンブリー工程中の熱履歴等によって、封止樹脂とリ
ードフレームとの間に亀裂が発生し、この亀裂がICや
LSIの作動不良の原因となるといった問題が発生して
きている。``Problems to be solved by inventions'' However, recently, I0. As LSIs and other devices become larger,
With the miniaturization of packaging, in surface mount type lead frames and lead frames with large chip sizes, cracks can occur between the sealing resin and the lead frame due to heat history during the assembly process, and these cracks can occur. Problems such as causing malfunction of ICs and LSIs have been occurring.
本願発明は前記課題を解決するためになされたもので、
シリコン素子に近い低熱膨張率を示すとともに、封止樹
脂との密着性も良好なリードフレーム用F e−N i
合金を提供することを目的とする。The present invention has been made to solve the above problems,
Fe-Ni for lead frames, which exhibits a low coefficient of thermal expansion close to that of silicon elements and also has good adhesion to sealing resin.
The purpose is to provide alloys.
「課題を解決するための手段」
本願発明は前記課題を解決するために、Ni 30〜
55%
Go 2.0%以下
Mn1%以下
Si 0.5%以下
Be 0.01〜0.05 %
Cu 5.0%以下
残部 Fe 及び不可避不純物
の組成を有するものである。"Means for Solving the Problems" In order to solve the problems described above, the present invention solves the problems described above.
55% Go 2.0% or less Mn 1% or less Si 0.5% or less Be 0.01-0.05% Cu 5.0% or less the balance Fe and unavoidable impurities.
「作用」
FeとNiとGoとMnとSiとCuを所定量含有する
低膨張率の合金に、Beを少量添加することで素材表面
にBe0層が生成され、このBe0層が封止樹脂との密
着性を向上させる。また、F e−N i系の合金に添
加するBeの添加量が少量で済むので、合金の主成分は
低膨張率の合金であり、このため、リードフレーム用の
材料として好適な熱膨張率が確保される。"Operation" By adding a small amount of Be to a low expansion coefficient alloy containing predetermined amounts of Fe, Ni, Go, Mn, Si, and Cu, a Be0 layer is generated on the surface of the material, and this Be0 layer acts as a sealing resin. Improves adhesion. In addition, since only a small amount of Be is added to the Fe-Ni alloy, the main component of the alloy is an alloy with a low coefficient of expansion, and therefore has a low coefficient of thermal expansion suitable as a material for lead frames. is ensured.
以下に本願発明を更に詳細に説明する。The present invention will be explained in more detail below.
本願発明の合金においては、Niにッケル)を30〜5
5%、Go(コバルト)を2.0%以下、Be(ベリリ
ウム)を0.01−0.05%、Si(ケイ素)を0.
5%以下、Mn(マンガン)を1%以下、Cu(銅)を
5.0%以下含有している。これらの組成において、N
iとCOとMnとSiの含有量は、本発明者らが先に特
願昭63−315646号明細書において特許出願して
いる高強度低膨張F e−N i合金およびその製法に
おいて記載されている合金の組成に準じるものである。In the alloy of the present invention, Ni (nickel) is 30 to 5
5%, Go (cobalt) 2.0% or less, Be (beryllium) 0.01-0.05%, Si (silicon) 0.
5% or less, Mn (manganese) at 1% or less, and Cu (copper) at 5.0% or less. In these compositions, N
The contents of i, CO, Mn, and Si are described in the high-strength, low-expansion Fe-Ni alloy and its manufacturing method, which the present inventors have previously applied for in Japanese Patent Application No. 63-315646. It corresponds to the composition of the alloy.
なお、本願発明の合金においては、不可避不純物として
、C(炭素)0.1%以下、S(イオウ)0.1%以下
、Al(アルミニウム)0.1%以下、Mg(マグネシ
ウム)0.1%以下、Ca(カルシウム)0.1%以下
を含んでいても差し支えない。In addition, in the alloy of the present invention, unavoidable impurities include C (carbon) 0.1% or less, S (sulfur) 0.1% or less, Al (aluminum) 0.1% or less, Mg (magnesium) 0.1% or less. % or less, and may contain Ca (calcium) 0.1% or less.
前記組成において、Niの含′有量を30〜55%以外
にすると、リードフレーム材料が適用されるシリコン素
子等の熱膨張率に適応した熱膨張率が得られなくなるた
めに好ましくなく、COの含有量が2.0%を越える場
合、熱膨張率が大きくなりすぎて好ましくない。また、
Beの含有量を0.01%未満とすると、BeOの酸化
膜が形成されず、封止樹脂との密着性が不十分になるの
で好ましくない。なお、Be含有量が0.05%を越え
高価なりeの添加により不必要にコストを上げるのでB
e添加量は0.05%以下が好ましい。更に、Siは脱
酸剤として用いるが、含有量が0.5%を越えると合金
を脆化させるので不都合であり、また、Mnは鍛造性を
向上させるとともに脱酸剤として用いるが、含有量が1
,0%を越えると曲げ性を悪化させるので好ましくない
。また、Cu含有量が5.0%を越えると熱膨張が大き
くなりすぎるので不適当である。In the above composition, if the Ni content is other than 30 to 55%, it is undesirable because the lead frame material will not have a thermal expansion coefficient that is compatible with the thermal expansion coefficient of the silicon element, etc. to which it is applied. If the content exceeds 2.0%, the coefficient of thermal expansion becomes too large, which is not preferable. Also,
If the Be content is less than 0.01%, a BeO oxide film will not be formed and the adhesion with the sealing resin will become insufficient, which is not preferable. Note that if the Be content exceeds 0.05%, it will be expensive and the addition of e will unnecessarily increase the cost.
The amount of e added is preferably 0.05% or less. Furthermore, Si is used as a deoxidizing agent, but if the content exceeds 0.5%, it causes the alloy to become brittle, which is inconvenient.Also, Mn improves forgeability and is used as a deoxidizing agent, but the content exceeds 0.5%. is 1
, 0% is not preferable because it deteriorates bendability. Further, if the Cu content exceeds 5.0%, the thermal expansion becomes too large, which is inappropriate.
以下に前記組成の合金を製造する方法の一例について説
明する。An example of a method for manufacturing an alloy having the above composition will be described below.
前記合金を製造するには、まず、前記の組成になるよう
に原材料を配合した後に、不純物の混入を避ける目的で
Arガスなどの雰囲気中で真空溶解を行って前記組成の
インゴットを得る。To manufacture the alloy, first, raw materials are blended to have the composition as described above, and then vacuum melting is performed in an atmosphere of Ar gas or the like to avoid contamination with impurities to obtain an ingot having the composition as described above.
次いでこのインゴットを1200〜1400℃で鍛造加
工し、目的の形状、例えば目的の板厚になるまで、好ま
しくは加工率70%以下で行う圧延加工と、800〜1
100℃で行う焼鈍処理をを好ましくは50%以下程度
に設定し、最終圧延後に歪取焼鈍を目的として、300
〜700℃の温度域において、好ましくは5時間以内の
熱処理を行い、所望の厚さの板材を得る。Next, this ingot is forged at 1200 to 1400°C, and then rolled to a desired shape, for example, a desired thickness, preferably at a processing rate of 70% or less, and
The annealing treatment performed at 100°C is preferably set to about 50% or less, and after the final rolling, for the purpose of strain relief annealing, 300°C
Heat treatment is preferably performed within a temperature range of ~700°C for 5 hours to obtain a plate material with a desired thickness.
以上のように製造された合金は、F e−N i−C。The alloy manufactured as described above is Fe-Ni-C.
系の低熱膨張率合金を主体として更にBeを少量添加し
ているので、シリコン素子の熱膨張率に近い熱膨張率を
有し、リードフレーム用材料として好適である。また、
添加されたBeの効果により素材表面にBe0層が生じ
、このBe0層が樹脂材との密着性を向上させるので、
リードフレームを構成して樹脂封止した場合、封止樹脂
とリードフレームの密着性が向上し、ICやLSIの作
動不良を防止できる効果がある。Since the material is mainly made of a low thermal expansion coefficient alloy with a small amount of Be added, it has a thermal expansion coefficient close to that of a silicon element, and is suitable as a lead frame material. Also,
Due to the effect of added Be, a Be0 layer is formed on the surface of the material, and this Be0 layer improves the adhesion with the resin material.
When a lead frame is constructed and sealed with resin, the adhesion between the sealing resin and the lead frame is improved, and there is an effect of preventing malfunctions of ICs and LSIs.
「実施例」
以下に示す第1表の組成になるように各々原材料を配合
し、各配合物をArガスを含む80Torrの真空雰囲
気において溶解してインゴットを作成し、次いでこのイ
ンゴットに1200〜1400℃で熱間鍛造加工を施し
、次いで、加工率70%以下で行う圧延加工と800〜
1100℃に加熱後に徐冷する焼鈍処理とを繰り返し行
い、最終圧延加工を加工率50%以下で行って圧延加工
を終了し、次いで、600℃に1分間加熱する歪取処理
を行って試料No1〜6のリードフレーム状の試験片を
得た。"Example" Each raw material was blended so as to have the composition shown in Table 1 below, and each blend was melted in a vacuum atmosphere of 80 Torr containing Ar gas to create an ingot. Hot forging at ℃, followed by rolling at a processing rate of 70% or less and 800~
The annealing process of heating to 1100°C and then slow cooling was repeated, the final rolling process was performed at a processing rate of 50% or less to complete the rolling process, and then the strain relief process of heating to 600°C for 1 minute was performed to obtain sample No. 1. -6 lead frame-shaped test pieces were obtained.
各試験片の平均熱膨張係数(30〜300℃、μ/μ。Average coefficient of thermal expansion of each test piece (30-300°C, μ/μ.
・℃)を測定し、その結果を第2表に示す。・°C) was measured, and the results are shown in Table 2.
第1表
第2表
第2表に示すように本願発明の合金試料No2〜No6
は、低膨張合金として知られる従来合金の試料Nolと
比較して同等の低熱膨張率を有している。As shown in Table 1, Table 2, and Table 2, alloy samples No. 2 to No. 6 of the present invention
has an equivalent low coefficient of thermal expansion compared to sample No. 1, a conventional alloy known as a low expansion alloy.
また、前記のように得られた合金試料Nol〜No6に
ついて、樹脂密着性評価試験を行った。Further, a resin adhesion evaluation test was conducted on the alloy samples No. 1 to No. 6 obtained as described above.
樹脂密着性評価試験は、本発明品および比較品を100
本のピンが放射状に配列された構成のQF P (Q
uad F lat P ackage)のリードフレ
ームとして用い、素子の取り付けと配線を行って加工後
、低応力樹脂でパッケージし、封止した。次に、パッケ
ージに吸湿処理(85℃で湿度80%の環境に0〜32
時間放置する処理)を施し、続いてはんだ浸漬処理(2
40℃のはんだ浴に10秒間、3回ドブ付けする処理)
を行い、この後に超音波探傷装置による内部クラック観
察を行った。In the resin adhesion evaluation test, the inventive product and comparative product were tested at 100%
QF P (Q
After processing by attaching elements and wiring, it was packaged and sealed with low stress resin. Next, the package is subjected to moisture absorption treatment (0 to 32% in an environment of 85℃ and 80% humidity).
solder immersion treatment (2) followed by solder dipping treatment (2).
3 times for 10 seconds in a 40°C solder bath)
After that, internal cracks were observed using an ultrasonic flaw detector.
第1図は、試験に用いたリードフレームの断面の概略構
造を示すもので、lはリードフレーム、2はtCチップ
、3はICチップ2を設置したリードフレームのパッド
部、4はリード線、5はリードフレームlを囲む樹脂部
分に生じたクラックを示している。前記内部クラックと
は、樹脂とリードフレームlとの密着性不良により水分
が浸透し、ICチップ2を載せるリードフレームのパッ
ド部3の角からその周囲の封止樹脂にクラック5が入る
ことであり、このクラック5が封止樹脂に入ると封止樹
脂とともに封止したリード線4が断線してしまうことが
ある。FIG. 1 shows the schematic cross-sectional structure of the lead frame used in the test, where l is the lead frame, 2 is the tC chip, 3 is the pad part of the lead frame on which the IC chip 2 is installed, 4 is the lead wire, 5 indicates a crack that occurred in the resin portion surrounding the lead frame l. The internal crack is a phenomenon in which moisture penetrates due to poor adhesion between the resin and the lead frame l, and a crack 5 enters the sealing resin around the corner of the pad part 3 of the lead frame on which the IC chip 2 is mounted. If this crack 5 enters the sealing resin, the lead wire 4 sealed together with the sealing resin may be disconnected.
前記超音波探傷装置によって内部クラックの観察を行っ
た結果を以下の第3表に示す。第3表において、O印は
内部クラックが発生していないことを示し、X印は内部
クラックが発生したことを示している。The results of observing internal cracks using the ultrasonic flaw detection device are shown in Table 3 below. In Table 3, the O mark indicates that no internal crack occurred, and the X mark indicates that an internal crack occurred.
第3表
第3表において明らかなように、本願発明品の試料No
3〜No6は、いずれも8時間以下の吸湿処理の場合、
クラックの発生が見られないことが判明した。また、B
eの添加量を増加した本願発明品の試料No5.6では
、吸湿処理16時間までクラックの発生を抑えることが
できた。なおまた、Beの添加量を0.008%に設定
した比較品の試料No2にあっては、従来品の試料No
lと同様に4時間の吸湿処理でクラック発生が見られ、
Beの添加量が少ないことを示している。また、Beの
添加量を0.01%とした試料No3は吸湿処理8時間
でもクラックの発生が見られていない。このためBeの
添加量は0.01%以上必要であることが明らかとなっ
た。As is clear from Table 3, sample No. of the invention product
3 to No. 6, in the case of moisture absorption treatment for 8 hours or less,
It was found that no cracks were observed. Also, B
In sample No. 5.6 of the product of the present invention in which the added amount of e was increased, the occurrence of cracks could be suppressed until 16 hours of moisture absorption treatment. Furthermore, sample No. 2 of the comparative product in which the added amount of Be was set to 0.008% is different from that of the conventional product sample No.
Similar to 1, cracks were observed after 4 hours of moisture absorption treatment.
This shows that the amount of Be added is small. Further, in sample No. 3 in which the amount of Be added was 0.01%, no cracks were observed even after 8 hours of moisture absorption treatment. Therefore, it has become clear that the amount of Be added must be 0.01% or more.
「発明の効果」
以上説明したように本願発明によれば、FeとNiとc
oとMnとSiとCuを所定量含有する低膨張率の合金
に、Beを少量添加したので、シリコン素子などに近い
熱膨張率を維持した上に、従来合金よりも樹脂密着性の
良好な合金を提供することができる。"Effects of the Invention" As explained above, according to the present invention, Fe, Ni and c
By adding a small amount of Be to a low expansion coefficient alloy containing predetermined amounts of O, Mn, Si, and Cu, it maintains a thermal expansion coefficient close to that of silicon elements and has better resin adhesion than conventional alloys. Alloys can be provided.
従って本願発明によれば、従来よりも優れたリードフレ
ーム用材料を提供することができる。また、本願発明の
合金は高価なりeの添加量が少量で済むので、低コスト
で得ることができる。Therefore, according to the present invention, it is possible to provide a lead frame material that is superior to conventional materials. Further, since the alloy of the present invention is expensive, only a small amount of e is added, so it can be obtained at low cost.
第1図はICチップとリードフレームの取付状態を示す
構成図である。
l・・・リードフレーム、2・・・ICチップ、3・・
・パッド部、4・・・リード線、5・・・クラック。FIG. 1 is a configuration diagram showing how an IC chip and a lead frame are attached. l...Lead frame, 2...IC chip, 3...
・Pad part, 4...Lead wire, 5...Crack.
Claims (1)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16458289A JPH0331449A (en) | 1989-06-27 | 1989-06-27 | Fe-ni alloy for lead frame |
| US07/450,038 US5084111A (en) | 1988-12-14 | 1989-12-13 | Fe-Ni alloy and method for treating ingot the same |
| US07/778,256 US5264052A (en) | 1988-12-14 | 1991-10-17 | Fe-Ni alloy and method for producing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16458289A JPH0331449A (en) | 1989-06-27 | 1989-06-27 | Fe-ni alloy for lead frame |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0331449A true JPH0331449A (en) | 1991-02-12 |
Family
ID=15795911
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16458289A Pending JPH0331449A (en) | 1988-12-14 | 1989-06-27 | Fe-ni alloy for lead frame |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0331449A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9161990B2 (en) | 2013-03-13 | 2015-10-20 | Theravance Biopharma Antibiotics Ip, Llc | Hydrochloride salts of a glycopeptide-cephalosporin antbiotic compond |
-
1989
- 1989-06-27 JP JP16458289A patent/JPH0331449A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9161990B2 (en) | 2013-03-13 | 2015-10-20 | Theravance Biopharma Antibiotics Ip, Llc | Hydrochloride salts of a glycopeptide-cephalosporin antbiotic compond |
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