JPH0332062B2 - - Google Patents

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Publication number
JPH0332062B2
JPH0332062B2 JP60039920A JP3992085A JPH0332062B2 JP H0332062 B2 JPH0332062 B2 JP H0332062B2 JP 60039920 A JP60039920 A JP 60039920A JP 3992085 A JP3992085 A JP 3992085A JP H0332062 B2 JPH0332062 B2 JP H0332062B2
Authority
JP
Japan
Prior art keywords
stage
voltage
electrolysis
layer
oxide film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60039920A
Other languages
Japanese (ja)
Other versions
JPS61198245A (en
Inventor
Akira Hashimoto
Ichizo Tsukuda
Makoto Tanio
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Altemira Co Ltd
Original Assignee
Showa Aluminum Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Showa Aluminum Corp filed Critical Showa Aluminum Corp
Priority to JP3992085A priority Critical patent/JPS61198245A/en
Publication of JPS61198245A publication Critical patent/JPS61198245A/en
Publication of JPH0332062B2 publication Critical patent/JPH0332062B2/ja
Granted legal-status Critical Current

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Description

【発明の詳細な説明】[Detailed description of the invention]

産業上の利用分野 この発明は、静電式複写機あるいは電算機のプ
リンタなどに使用される電子写真用感光体に関す
る。 従来の技術 この種の感光体は、一般にアルミニウム(この
明細書において「アルミニウム」の語はその合金
を含む意味に於いて用いられる。)からなる導電
性支持体上に、密着性を向上するための界面層を
介して光導電性絶縁材からなる光導電層が形成さ
れたものとなされている。光導電性材料として
は、従来から無定形セレンを主体とする各種材料
が広く用いられているところであるが、最近、光
感度、スペクトル特性、受容電位、電荷保持性等
の面で一段と優れた性質を有しかつ無公害である
等の利点から、アモルフアスシリコン(以下a−
Siと略記する)の使用の有望性が着目され、その
実用化が進められている。 ところが、従来のセレン系光導電性材料を用い
る場合においても勿論であるが、殊にa−Siで光
導電層を形成する場合、該光導電層の導電性支持
体に対する密着性、及び帯電・露光後の残留電位
特性の点で問題を生ずることが多い。 従来、アルミニウム製の導電性支持体を用いる
場合、主として光導電層の密着性の向上をはかる
ために、該支持体に予め下地処理として硫酸法等
による陽極酸化処理を施し、支持体表面に下地処
理界面層としての陽極酸化皮膜を形成することが
知られている(例えば特公昭57−104938号)。 発明が解決しようとする問題点 確かにこのような下地処理による陽極酸化皮
膜、なかでも特に硫酸皮膜は、封孔処理しない場
合、表面が吸着性に富み、比較的光導電層との良
好な密着性を実現しうる。ところが反面、電子写
真の画像形成プロセスにおいて、光照射後の残留
電位、即ち光減衰後の残留電位が比較的高いもの
となり、特に連続階調の画像形成に有害な影響を
及ぼすという難点があつた。例えば、最も一般的
な陽極酸化処理条件である硫酸濃度15%、温度20
℃の電解液を用いて、電流密度1.3A/dm2の条
件でアルミニウム製電極支持体を陽極酸化処理し
た場合、そのときの化成電圧は使用材料によつて
多少異なるが約15〜20V程度となり、その結果化
成される陽極酸化皮膜のバリヤー層(表面の多孔
質層下の絶縁層)の厚さは150〜200Å程度になる
といわれている。而して、このような皮膜を支持
体と光導電層との界面層として用いた場合、表面
の吸着性に富む多孔質層の存在によつて比較的良
好な密着性を得ることができるものの、露光後の
残留電位が高いものとなり、電気特性の面で必ず
しも高品質の感光体を得ることができないという
問題があつた。 本発明者等は、上記のような問題点を克服する
ことを目的として鋭意研究した結果、電気的特性
の低下の原因が、主に陽極酸化皮膜の下層部分に
不可避的に形成されるバリヤー層の有する比較的
高い絶縁性にあることをつきとめ、かかる知見に
基づいてこの発明を完成したものである。 従つて、この発明の所期目的は、光導電層に対
する密着性を比較的良好に保ちながも、バリヤー
層の厚さを100Å以下の極めて薄いものに制御し
て、露光後の残留電位の低減化をはかりうるよう
な界面陽極酸化皮膜の形成方法、即ち導電性支持
層に対する陽極酸化下地処理方法を提示すること
にある。 問題点を解決するための手段 而して、この発明は、アルミニウムからなる導
電性支持体の表面に、光導電層を密着状に被覆形
成するための下地処理界面層としての陽極酸化皮
膜を形成するに際して、該皮膜形成のための陽極
酸化処理を順次後段に至るに従つて相対的に低い
化成電圧を印加して行う段階的または連続階的な
実質的に複数段の電解処理によつて行うと共に、
最初の第1段目の電解を10V以上の電圧をかけて
行い、最後の第n段目の電解を10V以下で第1段
目の電解電圧より相対的に低い電圧を印加して行
うものとして、陽極酸化皮膜における表面多孔質
層下のバリヤー層の厚さを100Å以下に制御する
ことを特徴とする電子写真用感光体の下地処理方
法を要旨とする。 上記の陽極酸化処理は、好ましくは順次化成電
圧を下げて3段階程度に分けて行うものとするの
が有利であり、また最後の第n段目の電解は、こ
れを5V以下の電圧を印加して行うものとするの
が好適である。 手段の具体的な説明 陽極酸化皮膜を形成するための電解処理浴の種
類はこの発明において特に限定されるものではな
いが、一般的には硫酸、リン酸、シユウ酸等の溶
液が好適に用いられる。ただ、斯る電解液を用い
て導電性支持体を陽極酸化処理する場合、通常の
電解処理条件ではこの発明の所期する低残留電位
効果をもつた陽極酸化皮膜を形成せしめることは
できない。而して、この発明は、上記効果を発現
せしめうるような陽極酸化皮膜2を生成するた
め、陽極酸化皮膜2における表面部の多孔質層2
b下にあつて殊に絶縁層として作用するバリヤー
層2aの厚さt1を、100Å以下の極く薄いものに
制御しうるような特定の陽極酸化処理条件を提示
するものである。而して、この発明の方法による
処理条件は、基本的には、陽極酸化処理を実質的
に2段階以上の多段階に分けて行うものとし、か
つ順次後段に至るに従つて前段より相対的に低い
化成電圧を印加して行ういわば多段式陽極酸化処
理法である。 更に具体的には、この発明の方法は、初期の第
1段目の陽極酸化電解処理を通常の条件、例えば
好適には15〜20Vの電圧をかけて定電圧または定
電流で電解を行い、これによつて光導電性に対す
る充分な密着性を実現しうるような所定厚みの表
面多孔質層を有する陽極酸化皮膜を化成せしめた
のち、順次段階的にあるいは連続階的に初期電圧
より低い電圧で2段目更には3段目の後段の電解
処理を行うことにより、主としてバリヤー層2a
の厚さt1を漸次減少せしめるものである。得られ
る皮膜のバリヤー層2aの厚さは主に最終の第n
段の電解電圧に支配されて決定される。従つて、
この発明に規定される100Å以下の厚さにバリヤ
ー層を制御するためには、最終段階の化成電圧
は、一般的に2〜10V以下に設定することが必要
であり、好適には3〜8V程度の範囲、なかでも
特に5V以下に設定することが望ましい。また、
第1段目の電解から急激に上記のような低電圧領
域にまで電圧を下げて次段の電解を行うときは、
該効果電圧電解時においてなかなか所要の電流が
回復せず、処理に多くの時間を要することにな
る。このことから、好ましくは3段階程度には電
解処理を分けて行うものとし、順次後段に至るに
従つて5〜10V程度ずつ相対的に電圧を下げて電
解処理するのが有利である。なお、各段階の電解
はこれを完全に分離した工程として行う場合のほ
か、同一浴中で連続階的に次第に化成電圧を下げ
て一連に電解処理するものとしても良い。 その他の電解処理条件は一般的な普通の処理条
件に従えば良い。従つて、例えば硫酸法の場合、
濃度は10〜70%、特に好ましくは10〜20%、温度
15〜30℃程度の範囲で任意に変えることができ
る。かつ、電解時間は10〜60分間程度の範囲で変
えることができる。リン酸溶液を用いる場合に
は、特に多孔質層の孔径の大きいものが得られ、
密着性の更なる向上効果を期待することができる
点で有益である。リン酸法の場合の濃度は5〜20
%程度が好適であり、温度10〜30℃程度、時間3
〜30分間程度の範囲で適宜に変えることができ
る。更にシユウ酸法による場合、濃度1〜5%、
温度10〜30℃程度とされ、処理時間は5〜30分間
程度の範囲とされる。 なお、この発明において、導電性支持体の構成
材料として用いられるアルミニウム材の種類は特
に限定されるものではなく、切削性、強度、硬さ
等を考慮して市販の各種アルミニウム材の中から
適宜のものを選択使用することができる。一般的
には、純アルミニウム系、A3000番系等のアルミ
ニウム展伸材が好適に用いられる。 発明の効果 この発明においては、導電性支持体とその上に
形成される光導電層との間に界面層として介在さ
れることになる陽極酸化皮膜を、特にそのバリヤ
ー層の厚さにおいて通常の陽極酸化処理法では実
現し得ないような100Å以下のものに形成せしめ
うる。従つて、界面層が陽極酸化皮膜であるにも
拘わらず、それ自体の絶縁性を低いものとなし
得、帯電・露光時の光導電層の速やかな光減衰を
妨げることがなく、ひいては露光後の残留電位を
充分に低いものとすることができる。従つて、連
続階調の画像の解像力にも優れた電気特性の良好
な感光体を提供しうる。もとより、界面層がアル
ミニウム製導電性支持体の表面の陽極酸化皮膜と
して形成されるものであるから、表面にポーラス
な多孔質層を有してこれが光導電層に対する良好
な密着性を示し、セレン系の光導電性材料を用い
る場合はもちろんのこと、a−Si系の光導電性材
料を用いる場合においても、光導電層の成層形成
後、放冷過程等において該層の別離、ふくれ、亀
裂等の現象を生じることのない安定した感光体の
製造に貢献を果し得る。 実施例 実施例 1 A1070−H14からなる外径80mm、内径74mm、長
さ340mmのアルミニウム円筒体を導電性支持体と
して用い、表面を鏡面切削仕上げし、かつ弱アル
カリ系脱脂剤で脱脂処理したのち、次の処理条件
で3段階に陽極酸化電解処理した。 第1段目電解:電解液 15%硫酸 温度 20℃ 電流密度 1.3A/dm2 (化成電圧 16〜18V) 時間 3分 電解法 定電流電解 第2段目電解:電解液 第1段目と同じ 温度 第1段目と同じ 電圧 8V 時間 3分 電解法 定電圧電解 第3段目電解:電解液 第1段目と同じ 温度 第1段目と同じ 電圧 3V 時間 5分 電解法 定電圧電解 次いで、この陽極酸化皮膜を有する支持体を充
分に水洗し、自然乾燥した後、上記支持体上に、
グロー放電法によりa−Siからなる厚さ約20μm
の光導電層を形成し、常温下に自然冷却して電子
写真用感光体の本発明試料No.1を得た。 実施例 2 各段の電解処理条件を次のとおりとした以外
は、実施例1と同様にして表面にa−Si光導電層
を有する感光体の本発明試料No.2を得た。 第1段目電解:電解液 10%リン酸 温度 30℃ 電圧 20V定電圧電解 時間 3分 第2段目電解:電解液 第1段目と同じ 温度 第1段目と同じ 電圧 10V定電圧電解 時間 7分 第3段目電解:電解液 第1段目と同じ 温度 第1段目と同じ 電圧 5V定電圧電解 時間 5分 実施例 3 各段の電解処理条件を次のとおりとした以外
は、実施例1と同様にして表面にa−Si光導電層
を有する感光体の本発明試料No.3を得た。 第1段目電解:電解液 2%シユウ酸 温度 35℃ 電圧 20V定電圧電解 時間 7分 第2段目電解:電解液 第1段目と同じ 温度 第1段目と同じ 電圧 15V定電圧電解 時間 3分 第3段目電解:電解液 第1段目と同じ 温度 第1段目と同じ 電圧 10V定電圧電解 時間 5分 比較例 1〜2 実施例1〜3と同様のアルミニウム製円筒状導
電性支持体を前処理したのち、常法に従つて、15
%硫酸電解液により、温度20℃において、電流密
度1.3A/dm2の条件で3分間陽極酸化電解処理
した。そして、陽極酸化皮膜の未封孔のもの(比
較例試料No.1)と、更に続いて常法による封孔処
理を施したもの(比較例試料No.2)とをつくり、
以降は前記実施例1〜3の場合と同様にして、表
面にa−Si光導電層を有する感光体の比較例試料
No.1〜2を得た。 上記実施例の本発明試料No.1〜3及び比較例試
料No.1〜2のそれぞれにつき、その陽極酸化皮膜
のバリヤー層及び多孔質層の厚さを測定すると共
に、光導電層の密着性を評価した。そして又、こ
れらの感光体試料を、暗中においてコロナ電圧
5.5KVで帯電させ、次いでハロゲンランプにて10
χ・s露光したのちの残留電位を測定した。 これらの結果を下表に示す。
INDUSTRIAL APPLICATION FIELD This invention relates to an electrophotographic photoreceptor used in electrostatic copying machines, computer printers, and the like. BACKGROUND ART This type of photoreceptor is generally coated on a conductive support made of aluminum (the term "aluminum" is used in this specification to include its alloys) to improve adhesion. A photoconductive layer made of a photoconductive insulating material is formed through the interface layer. Various materials mainly composed of amorphous selenium have been widely used as photoconductive materials, but recently, materials with even better properties in terms of photosensitivity, spectral characteristics, acceptance potential, charge retention, etc. have been widely used. Amorphous silicon (hereinafter referred to as a-
The promising use of Si (abbreviated as Si) has attracted attention, and efforts are being made to put it into practical use. However, even when conventional selenium-based photoconductive materials are used, especially when forming a photoconductive layer with a-Si, the adhesion of the photoconductive layer to the conductive support and the charging and Problems often arise in terms of residual potential characteristics after exposure. Conventionally, when using a conductive support made of aluminum, in order to improve the adhesion of the photoconductive layer, the support is previously subjected to anodization treatment using a sulfuric acid method as a base treatment, and a base layer is applied to the surface of the support. It is known to form an anodic oxide film as a treatment interface layer (for example, Japanese Patent Publication No. 104938/1983). Problems to be Solved by the Invention It is true that the anodic oxide film formed by such base treatment, especially the sulfuric acid film, has a highly adsorbent surface and relatively good adhesion to the photoconductive layer when not sealed. It is possible to realize sexuality. However, in the image forming process of electrophotography, the residual potential after light irradiation, that is, the residual potential after light attenuation, is relatively high, which has a disadvantage in that it has a particularly harmful effect on continuous tone image formation. . For example, the most common anodizing conditions are 15% sulfuric acid concentration and 20% temperature.
When an aluminum electrode support is anodized at a current density of 1.3 A/dm 2 using an electrolyte at ℃, the anodizing voltage will vary slightly depending on the material used, but will be about 15 to 20 V. The thickness of the barrier layer (insulating layer under the surface porous layer) of the resulting anodic oxide film is said to be approximately 150 to 200 Å. When such a film is used as an interface layer between a support and a photoconductive layer, relatively good adhesion can be obtained due to the presence of a porous layer with high adsorption properties on the surface. However, there was a problem in that the residual potential after exposure was high and it was not always possible to obtain a photoreceptor of high quality in terms of electrical properties. As a result of intensive research aimed at overcoming the above-mentioned problems, the present inventors have found that the cause of the deterioration of electrical characteristics is mainly a barrier layer that is inevitably formed in the lower layer of the anodic oxide film. The present invention was completed based on this knowledge. Therefore, the intended purpose of the present invention is to maintain relatively good adhesion to the photoconductive layer while controlling the thickness of the barrier layer to be extremely thin, 100 Å or less, to reduce the residual potential after exposure. The object of the present invention is to provide a method for forming an interfacial anodic oxide film that can reduce the amount of damage caused by anodic oxidation, that is, a method for anodizing a conductive support layer. Means for Solving the Problems Therefore, the present invention forms an anodic oxide film on the surface of a conductive support made of aluminum as a surface treatment interface layer for closely covering a photoconductive layer. In this case, the anodizing treatment for forming the film is carried out by a stepwise or continuous stepwise substantially multi-stage electrolytic treatment in which a relatively lower anodizing voltage is applied to the later stages. With,
The first stage of electrolysis is performed by applying a voltage of 10V or more, and the final nth stage is performed by applying a voltage of 10V or less, which is relatively lower than the first stage electrolysis voltage. The gist of the present invention is a method for surface treatment of an electrophotographic photoreceptor, which is characterized by controlling the thickness of the barrier layer under the surface porous layer in the anodic oxide film to 100 Å or less. It is advantageous to perform the above anodic oxidation treatment in about three stages, preferably by lowering the anodization voltage sequentially, and for the final n-th stage electrolysis, apply a voltage of 5V or less. It is preferable that the Specific Description of Means The type of electrolytic treatment bath for forming the anodic oxide film is not particularly limited in this invention, but in general, solutions such as sulfuric acid, phosphoric acid, and oxalic acid are preferably used. It will be done. However, when a conductive support is anodized using such an electrolytic solution, an anodized film having the low residual potential effect desired by the present invention cannot be formed under normal electrolytic treatment conditions. Therefore, in order to produce the anodic oxide film 2 that can exhibit the above-mentioned effects, the present invention improves the porous layer 2 on the surface of the anodic oxide film 2.
The present invention proposes specific anodizing treatment conditions that make it possible to control the thickness t1 of the barrier layer 2a, which is located below b and acts particularly as an insulating layer, to an extremely thin value of 100 Å or less. Therefore, the processing conditions according to the method of the present invention are basically such that the anodizing treatment is carried out in substantially two or more stages, and as the latter stage is reached, the relative strength is increased from the earlier stage. This is a so-called multi-stage anodic oxidation treatment method in which a low anodizing voltage is applied to the anodizing process. More specifically, the method of the present invention performs the initial first stage anodizing electrolytic treatment under normal conditions, for example, preferably by applying a voltage of 15 to 20 V and performing electrolysis at a constant voltage or constant current. After forming an anodic oxide film having a surface porous layer of a predetermined thickness that can achieve sufficient adhesion for photoconductivity, a voltage lower than the initial voltage is applied in stages or successively. By performing electrolytic treatment in the second stage and further in the latter stage of the third stage, the barrier layer 2a is mainly
The thickness t 1 is gradually decreased. The thickness of the barrier layer 2a of the obtained film is mainly determined by the thickness of the final nth layer.
It is determined by the electrolytic voltage of the stage. Therefore,
In order to control the barrier layer to a thickness of 100 Å or less as stipulated in this invention, it is necessary to set the final step formation voltage to generally 2 to 10 V or less, preferably 3 to 8 V. It is desirable to set the voltage within a certain range, especially 5V or less. Also,
When performing the next stage of electrolysis by rapidly lowering the voltage from the first stage of electrolysis to the low voltage region mentioned above,
During effective voltage electrolysis, the required current does not recover easily, and the process requires a lot of time. For this reason, it is advantageous that the electrolytic treatment is preferably carried out in about three stages, and the voltage is relatively lowered by about 5 to 10 V as the latter stages progress. The electrolysis at each stage may be carried out as completely separate steps, or may be carried out in series in the same bath by gradually lowering the formation voltage. Other electrolytic treatment conditions may follow general treatment conditions. Therefore, for example, in the case of the sulfuric acid method,
Concentration is 10-70%, particularly preferably 10-20%, temperature
The temperature can be changed arbitrarily within the range of about 15 to 30°C. Moreover, the electrolysis time can be changed within a range of about 10 to 60 minutes. When using a phosphoric acid solution, a porous layer with a particularly large pore size can be obtained;
This is advantageous in that it can be expected to further improve adhesion. In the case of phosphoric acid method, the concentration is 5 to 20
% is suitable, temperature is about 10 to 30℃, time 3
The time can be changed as appropriate within the range of ~30 minutes. Furthermore, when using the oxalic acid method, the concentration is 1 to 5%,
The temperature is about 10 to 30°C, and the treatment time is about 5 to 30 minutes. In this invention, the type of aluminum material used as a constituent material of the conductive support is not particularly limited, and can be selected from various commercially available aluminum materials in consideration of machinability, strength, hardness, etc. You can use whatever you choose. Generally, wrought aluminum materials such as pure aluminum and A3000 series are preferably used. Effects of the Invention In this invention, the anodic oxide film to be interposed as an interface layer between the conductive support and the photoconductive layer formed thereon has a thickness that is smaller than the normal thickness of the barrier layer. It can be formed to a thickness of 100 Å or less, which cannot be achieved by anodizing. Therefore, even though the interface layer is an anodic oxide film, it has low insulation properties, does not hinder the rapid light attenuation of the photoconductive layer during charging and exposure, and even after exposure. The residual potential of can be made sufficiently low. Therefore, it is possible to provide a photoreceptor with good electrical characteristics and excellent resolution of continuous tone images. Since the interfacial layer is originally formed as an anodic oxide film on the surface of the aluminum conductive support, it has a porous layer on the surface that exhibits good adhesion to the photoconductive layer. Not only when a-Si type photoconductive materials are used, but also when using a-Si type photoconductive materials, separation, blistering, and cracking of the photoconductive layer may occur during the cooling process after the formation of the photoconductive layer. This can contribute to the production of stable photoreceptors that do not cause such phenomena. Examples Example 1 An aluminum cylindrical body made of A1070-H14 with an outer diameter of 80 mm, an inner diameter of 74 mm, and a length of 340 mm was used as a conductive support, the surface was polished to a mirror finish, and the surface was degreased with a weak alkaline degreaser. , the anodic oxidation electrolytic treatment was carried out in three stages under the following treatment conditions. 1st stage electrolysis: Electrolyte 15% sulfuric acid Temperature 20℃ Current density 1.3A/dm 2 (Formation voltage 16-18V) Time 3 minute electrolysis method Constant current electrolysis 2nd stage electrolysis: Electrolyte Same as 1st stage Temperature Same voltage as 1st stage 8V Time 3 minute electrolysis method Constant voltage electrolysis 3rd stage electrolysis: Electrolyte Same temperature as 1st stage Same voltage as 1st stage 3V Time 5 minutes electrolysis method Constant voltage electrolysis Then, After thoroughly washing the support having the anodic oxide film and drying it naturally, on the support,
Approximately 20μm thick made of a-Si by glow discharge method
A photoconductive layer was formed thereon, and the sample was naturally cooled to room temperature to obtain sample No. 1 of the electrophotographic photoreceptor of the present invention. Example 2 Inventive sample No. 2 of a photoreceptor having an a-Si photoconductive layer on the surface was obtained in the same manner as in Example 1, except that the electrolytic treatment conditions at each stage were as follows. 1st stage electrolysis: Electrolyte 10% phosphoric acid Temperature 30℃ Voltage 20V constant voltage electrolysis time 3 minutes 2nd stage electrolysis: Electrolyte Same temperature as 1st stage Same voltage as 1st stage 10V constant voltage electrolysis time 7 minutes 3rd stage electrolysis: Electrolyte Same temperature as the 1st stage Same voltage as the 1st stage 5V constant voltage electrolysis time 5 minutes Example 3 The electrolytic treatment conditions for each stage were as follows. Sample No. 3 of the present invention, a photoreceptor having an a-Si photoconductive layer on the surface, was obtained in the same manner as in Example 1. 1st stage electrolysis: Electrolyte 2% oxalic acid Temperature 35℃ Voltage 20V constant voltage electrolysis time 7 minutes 2nd stage electrolysis: Electrolyte Same temperature as the 1st stage Same voltage as the 1st stage 15V constant voltage electrolysis time 3 minutes 3rd stage electrolysis: Electrolyte Same temperature as the 1st stage Same voltage as the 1st stage 10V constant voltage electrolysis time 5 minutes Comparative Examples 1-2 Aluminum cylindrical conductive similar to Examples 1-3 After pretreating the support, 15
% sulfuric acid electrolyte at a temperature of 20° C. and a current density of 1.3 A/dm 2 for 3 minutes. Then, an unsealed anodic oxide film (Comparative Sample No. 1) and another that had been subjected to a sealing treatment using a conventional method (Comparative Sample No. 2) were made.
Thereafter, in the same manner as in Examples 1 to 3, comparative samples of photoreceptors having an a-Si photoconductive layer on the surface were prepared.
Nos. 1 and 2 were obtained. For each of the present invention samples No. 1 to 3 and comparative example samples No. 1 to 2 of the above examples, the thickness of the barrier layer and porous layer of the anodic oxide film was measured, and the adhesion of the photoconductive layer was measured. was evaluated. Furthermore, these photoreceptor samples were subjected to corona voltage in the dark.
Charge with 5.5KV, then 10 minutes with a halogen lamp.
The residual potential after χ·s exposure was measured. These results are shown in the table below.

【表】 上表の結果により、この発明に係る下地処理方
法を採用して製作した感光体は、光導電層の密着
性を良好に保ちつつ、殊に露光後の残留電位の低
下効果を認め得るものであつた。
[Table] From the results shown in the above table, the photoreceptor manufactured using the surface treatment method according to the present invention has a particularly good effect of reducing the residual potential after exposure while maintaining good adhesion of the photoconductive layer. It was something to gain.

【図面の簡単な説明】[Brief explanation of drawings]

図面はこの発明の下地処理を施して製作される
感光体の支持体と光導電層との界面部分の構造を
示す模式図である。 1…導電性支持体、2…陽極酸化皮膜、2a…
バリヤー層、2b…多孔質層、3…光導電層。
The drawing is a schematic diagram showing the structure of the interface between the support and the photoconductive layer of a photoreceptor produced by subjecting it to the surface treatment of the present invention. 1... Conductive support, 2... Anodic oxide film, 2a...
Barrier layer, 2b... Porous layer, 3... Photoconductive layer.

Claims (1)

【特許請求の範囲】[Claims] 1 アルミニウムからなる導電性支持体の表面
に、光導電層を密着状に被覆形成するための下地
処理界面層としての陽極酸化皮膜を形成するに際
して、該皮膜形成のための陽極酸化処理を順次後
段に至るに従つて相対的に低い化成電圧を印加し
て行う段階的または連続階的な実質的に複数段の
電解処理によつて行うと共に、最初の第1段目の
電解を10V以上の電圧をかけて行い、最後の第n
段目の電解を10V以下で第1段目の電解電圧より
相対的に低い電圧を印加して行うものとして、陽
極酸化皮膜における表面多孔質層下のバリヤー層
の厚さを100Å以下に制御することを特徴とする
電子写真用感光体の下地処理方法。
1. When forming an anodic oxide film as a surface treatment interface layer for closely covering a photoconductive layer on the surface of a conductive support made of aluminum, anodizing treatment for forming the film is sequentially performed at a later stage. The electrolytic treatment is carried out in substantially multiple stages in a stepwise or continuous manner by applying a relatively low anodizing voltage as the process progresses, and the first stage of electrolysis is performed at a voltage of 10 V or higher. and the last nth
The thickness of the barrier layer under the surface porous layer in the anodic oxide film is controlled to be 100 Å or less, assuming that the stage electrolysis is performed by applying a voltage of 10 V or less, which is relatively lower than the first stage electrolysis voltage. A method for treating a surface of a photoreceptor for electrophotography, characterized in that:
JP3992085A 1985-02-28 1985-02-28 Treatment of undercoat layer of electrophotographic sensitive body Granted JPS61198245A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3992085A JPS61198245A (en) 1985-02-28 1985-02-28 Treatment of undercoat layer of electrophotographic sensitive body

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3992085A JPS61198245A (en) 1985-02-28 1985-02-28 Treatment of undercoat layer of electrophotographic sensitive body

Publications (2)

Publication Number Publication Date
JPS61198245A JPS61198245A (en) 1986-09-02
JPH0332062B2 true JPH0332062B2 (en) 1991-05-09

Family

ID=12566370

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3992085A Granted JPS61198245A (en) 1985-02-28 1985-02-28 Treatment of undercoat layer of electrophotographic sensitive body

Country Status (1)

Country Link
JP (1) JPS61198245A (en)

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Publication number Priority date Publication date Assignee Title
JP2680314B2 (en) * 1987-10-21 1997-11-19 昭和アルミニウム株式会社 Substrate processing method for electrophotographic organic photoconductor
JP2768634B2 (en) * 1994-05-06 1998-06-25 株式会社神戸製鋼所 Method for manufacturing photosensitive drum excellent in printability
KR101190657B1 (en) * 2003-04-21 2012-10-15 삼성전자주식회사 Manufacturing method of self-ordered nanochannel-array and manufacturing method of nano dot using the nanochannel-array
JP5014782B2 (en) * 2006-12-28 2012-08-29 三菱アルミニウム株式会社 Method for producing surface-treated aluminum material and apparatus for producing surface-treated aluminum material
JP5073288B2 (en) * 2006-12-28 2012-11-14 三菱アルミニウム株式会社 Method for producing surface-treated aluminum material and apparatus for producing surface-treated aluminum material
JP5014781B2 (en) * 2006-12-28 2012-08-29 三菱アルミニウム株式会社 Method for producing surface-treated aluminum material and apparatus for producing surface-treated aluminum material
KR101780923B1 (en) * 2009-03-30 2017-09-22 액센투스 메디컬 리미티드 Metal treatment
CN101812712B (en) * 2010-05-07 2011-11-16 常州大学 High-speed preparation method of extra small bore diameter porous anodized aluminium film

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Also Published As

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