JPH0332351U - - Google Patents
Info
- Publication number
- JPH0332351U JPH0332351U JP9350189U JP9350189U JPH0332351U JP H0332351 U JPH0332351 U JP H0332351U JP 9350189 U JP9350189 U JP 9350189U JP 9350189 U JP9350189 U JP 9350189U JP H0332351 U JPH0332351 U JP H0332351U
- Authority
- JP
- Japan
- Prior art keywords
- shaped thin
- thin plate
- skirt
- front skirt
- power source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000006386 neutralization reaction Methods 0.000 claims description 2
- 239000004020 conductor Substances 0.000 claims 1
- 150000002500 ions Chemical class 0.000 description 3
- 238000010586 diagram Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005040 ion trap Methods 0.000 description 1
Landscapes
- Electron Sources, Ion Sources (AREA)
Description
第１図は本考案の一実施例の概略図である。
１……電子ビーム、２……正イオン、３……正
電位、４……イオントラツプ電極、５……正イオ
ンの運動方向、６，７……イオン中和用のフイン
、８……電源、９……分子。
FIG. 1 is a schematic diagram of an embodiment of the present invention. 1... Electron beam, 2... Positive ions, 3... Positive potential, 4... Ion trap electrode, 5... Movement direction of positive ions, 6, 7... Fin for ion neutralization, 8... Power source, 9...Molecular.
Claims (1)
点を含んだ同心円の穴があけられた導電体からな
る前部スカート形状薄板と、前記前部スカート形
状薄板とある一定距離を保持して平行に固定され
る前記前部スカート形状薄板と同形状の後部スカ
ート形状薄板と、前記前部及び後部スカート形状
薄板の両方に電位を与える電源とを有することを
特徴とするイオン中和構造。 A front skirt-shaped thin plate made of a conductor with a concentric hole including the apex on the central axis of the surface portion of the cone excluding the bottom surface, and a certain distance from the front skirt-shaped thin plate is maintained. An ion neutralization structure characterized by comprising: a rear skirt-shaped thin plate having the same shape as the front skirt-shaped thin plate fixed in parallel; and a power source that applies a potential to both the front and rear skirt-shaped thin plates.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1989093501U JP2508590Y2 (en) | 1989-08-08 | 1989-08-08 | Ion neutralization structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1989093501U JP2508590Y2 (en) | 1989-08-08 | 1989-08-08 | Ion neutralization structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0332351U true JPH0332351U (en) | 1991-03-28 |
| JP2508590Y2 JP2508590Y2 (en) | 1996-08-28 |
Family
ID=31642879
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1989093501U Expired - Lifetime JP2508590Y2 (en) | 1989-08-08 | 1989-08-08 | Ion neutralization structure |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2508590Y2 (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63108700A (en) * | 1986-10-27 | 1988-05-13 | 日本電信電話株式会社 | Ion neutralizer |
-
1989
- 1989-08-08 JP JP1989093501U patent/JP2508590Y2/en not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63108700A (en) * | 1986-10-27 | 1988-05-13 | 日本電信電話株式会社 | Ion neutralizer |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2508590Y2 (en) | 1996-08-28 |