JPH0332444U - - Google Patents
Info
- Publication number
- JPH0332444U JPH0332444U JP8590290U JP8590290U JPH0332444U JP H0332444 U JPH0332444 U JP H0332444U JP 8590290 U JP8590290 U JP 8590290U JP 8590290 U JP8590290 U JP 8590290U JP H0332444 U JPH0332444 U JP H0332444U
- Authority
- JP
- Japan
- Prior art keywords
- field effect
- effect transistor
- diode
- shaped semiconductor
- island
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 14
- 230000005669 field effect Effects 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 5
Landscapes
- Logic Circuits (AREA)
- Junction Field-Effect Transistors (AREA)
Description
第１図Ａは従来例によるレベルシフト回路装置
の等価回路図、同図Ｂは同回路装置の平面パター
ンの説明図、第２図Ａは第１図の回路装置におけ
るＦＥＴ２の−特性を示すグラフ、同図Ｂは
同回路装置におけるダイオードの−特性を示
したグラフ、第３図Ａは本考案の実施例の等価回
路図、同図Ｂはその平面パターンの説明図、第４
図は同実施例におけるダイオードの−特性を
示すグラフ、第５図は第３図Ｂの素子の断面構造
を示す説明図、第６図はレベルシフト回路装置の
使用例を示す回路図である。
図中、１……第２の電界効果トランジスタ、２
……第１の電界効果トランジスタ、３……ダイオ
ード、１１，１２，１３……半導体層である。
1A is an equivalent circuit diagram of a conventional level shift circuit device, FIG. 1B is an explanatory diagram of a plane pattern of the circuit device, and FIG. 2A is a graph showing the characteristics of FET 2 in the circuit device of FIG. 1. , FIG. 3B is a graph showing the characteristics of the diode in the same circuit device, FIG. 3A is an equivalent circuit diagram of the embodiment of the present invention, FIG.
5 is an explanatory diagram showing the cross-sectional structure of the element in FIG. 3B, and FIG. 6 is a circuit diagram showing an example of use of the level shift circuit device. In the figure, 1... second field effect transistor, 2
. . . first field effect transistor, 3 . . . diode, 11, 12, 13 . . . semiconductor layer.
補正 平２．９．１２
考案の名称を次のように補正する。
考案の名称 半導体装置の製造装置
実用新案登録請求の範囲を次のように補正する
。Amendment 2.9.12 The name of the invention is amended as follows. Title of invention: Semiconductor device manufacturing device The scope of claims for utility model registration is amended as follows.
【実用新案登録請求の範囲】
基板上に設けられた第１の島状半導体に形成さ
れ、定電流源として働く第１の電界効果トランジ
スタと、
前記第１の島状半導体と分離して基板上に設け
られた第２の島状半導体に形成され、アノード電
極の両側に共通接続されたカソード電極を備える
プレーナ形ダイオードと、
前記第１及び２の島状半導体と分離して基板上
に設けられた第３の島状半導体に形成され、前記
第１の電界効果トランジスタ及びプレーナ形ダイ
オードを負荷抵抗としソースホロアとして働く第
２の電界効果トランジスタとを備え、
第２の電界効果トランジスタのゲートに加わる
入力電圧を該ダイオードの電圧降下分だけレベル
シフトして該ダイオードと第１の電界効果トラン
ジスタとの直列接続点から出力するレベルシフト
回路装置を形成するにおいて、
前記第１、第２及び第３の島状半導体は、基板
上に成長された１つエピタキシヤル半導体層を互
いに分離することで形成されることを特徴とする
半導体装置の製造装置。[Claims for Utility Model Registration] A first field effect transistor formed on a first island-shaped semiconductor provided on a substrate and serving as a constant current source; a planar diode formed on a second island-shaped semiconductor provided on the substrate and having a cathode electrode commonly connected to both sides of an anode electrode; a second field effect transistor formed in a third island-shaped semiconductor with the first field effect transistor and a planar diode serving as a load resistance and serving as a source follower; In forming a level shift circuit device that level-shifts a voltage by a voltage drop of the diode and outputs it from a series connection point between the diode and the first field effect transistor, the first, second and third islands 1. An apparatus for manufacturing a semiconductor device, characterized in that a shaped semiconductor is formed by separating one epitaxial semiconductor layer grown on a substrate from each other.
Claims (1)
れ、定電流源として働く第１の電界効果トランジ
スタと、 前記第１の島状半導体と分離して基板上に設け
られた第２の島状半導体に形成され、アノード電
極の両側に共通接続されたカソード電極を備える
プレーナ形ダイオードと、 前記第１及び２の島状半導体と分離して基板上
に設けられた第３の島状半導体に形成され、前記
第１の電界効果トランジスタ及びプレーナ形ダイ
オードを負荷抵抗としソースホロアとして働く第
２の電界効果トランジスタとを備え、 第２の電界効果トランジスタのゲートに加わる
入力電圧を該ダイオードの電圧降下分だけレベル
シフトして該ダイオードと第１の電界効果トラン
ジスタとの直列接続点から出力するレベルシフト
回路装置を形成するにおいて、 前記第１、第２及び第３の島状半導体は、基板
上に成長された１つエピタキシヤル半導体層を互
いに分離することで形成されることを特徴とする
半導体装置の製造方法。[Claims for Utility Model Registration] A first field effect transistor formed on a first island-shaped semiconductor provided on a substrate and serving as a constant current source; a planar diode formed on a second island-shaped semiconductor provided on the substrate and having a cathode electrode commonly connected to both sides of an anode electrode; a second field effect transistor formed in a third island-shaped semiconductor with the first field effect transistor and a planar diode serving as a load resistance and serving as a source follower; In forming a level shift circuit device that level-shifts a voltage by a voltage drop of the diode and outputs it from a series connection point between the diode and the first field effect transistor, the first, second and third islands 1. A method of manufacturing a semiconductor device, characterized in that the shaped semiconductor is formed by separating one epitaxial semiconductor layer grown on a substrate from each other.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8590290U JPH0332444U (en) | 1990-08-15 | 1990-08-15 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8590290U JPH0332444U (en) | 1990-08-15 | 1990-08-15 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0332444U true JPH0332444U (en) | 1991-03-29 |
Family
ID=31635265
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8590290U Pending JPH0332444U (en) | 1990-08-15 | 1990-08-15 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0332444U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011040888A (en) * | 2009-08-07 | 2011-02-24 | Dainippon Printing Co Ltd | Semiconductor electronic circuit, transmission circuit, and flip-flop circuit |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53118374A (en) * | 1977-03-25 | 1978-10-16 | Nec Corp | Integrated diode device |
| JPS5586222A (en) * | 1978-12-23 | 1980-06-28 | Fujitsu Ltd | Level shift circuit |
-
1990
- 1990-08-15 JP JP8590290U patent/JPH0332444U/ja active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53118374A (en) * | 1977-03-25 | 1978-10-16 | Nec Corp | Integrated diode device |
| JPS5586222A (en) * | 1978-12-23 | 1980-06-28 | Fujitsu Ltd | Level shift circuit |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011040888A (en) * | 2009-08-07 | 2011-02-24 | Dainippon Printing Co Ltd | Semiconductor electronic circuit, transmission circuit, and flip-flop circuit |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH0332444U (en) | ||
| JPH0256462U (en) | ||
| JPS5984930U (en) | level shift circuit device | |
| JPH0328517Y2 (en) | ||
| JPS6223098Y2 (en) | ||
| JPS59161059A (en) | Semicondcutor device | |
| JPS6224659A (en) | Complex junction capacitor | |
| JPS6210031B2 (en) | ||
| JPS6128224B2 (en) | ||
| JPS62180962U (en) | ||
| JPS6188561A (en) | transistor | |
| JPS5832662U (en) | semiconductor equipment | |
| JPS6344789A (en) | semiconductor laser equipment | |
| JPS6140062A (en) | Semiconductor device | |
| JPS6379639U (en) | ||
| JPS60137450U (en) | semiconductor resistance device | |
| JPS6134754U (en) | field effect transistor | |
| JPS60149162A (en) | semiconductor equipment | |
| JPS60226161A (en) | Semiconductor integrated circuit device | |
| JPS6113657A (en) | Semiconductor device | |
| JPH0289855U (en) | ||
| JPS6424866U (en) | ||
| JPH0244335U (en) | ||
| JPH0499331A (en) | semiconductor equipment | |
| JPH03219641A (en) | Semiconductor device |