JPH033282A - Excimer laser device - Google Patents
Excimer laser deviceInfo
- Publication number
- JPH033282A JPH033282A JP13663789A JP13663789A JPH033282A JP H033282 A JPH033282 A JP H033282A JP 13663789 A JP13663789 A JP 13663789A JP 13663789 A JP13663789 A JP 13663789A JP H033282 A JPH033282 A JP H033282A
- Authority
- JP
- Japan
- Prior art keywords
- main discharge
- electrode
- discharge electrode
- srtio3
- dielectric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000003989 dielectric material Substances 0.000 claims abstract description 17
- 239000000919 ceramic Substances 0.000 claims abstract description 15
- 238000000034 method Methods 0.000 claims abstract description 9
- 239000012808 vapor phase Substances 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 2
- 229910002370 SrTiO3 Inorganic materials 0.000 abstract description 7
- 230000010355 oscillation Effects 0.000 abstract description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 5
- 239000010453 quartz Substances 0.000 abstract description 4
- 238000004544 sputter deposition Methods 0.000 abstract description 3
- 229910002113 barium titanate Inorganic materials 0.000 abstract description 2
- 239000007787 solid Substances 0.000 abstract description 2
- 238000005477 sputtering target Methods 0.000 abstract description 2
- 229910003781 PbTiO3 Inorganic materials 0.000 abstract 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 10
- 229910052573 porcelain Inorganic materials 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 230000007423 decrease Effects 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 238000007751 thermal spraying Methods 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 150000002366 halogen compounds Chemical class 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000000752 ionisation method Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229920003223 poly(pyromellitimide-1,4-diphenyl ether) Polymers 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/02—Constructional details
- H01S3/03—Constructional details of gas laser discharge tubes
- H01S3/038—Electrodes, e.g. special shape, configuration or composition
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Optics & Photonics (AREA)
- Lasers (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明はエキシマレーザ装置に係り、特に紫外線コロナ
予備電離方式のエキシマレーザ装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an excimer laser device, and particularly to an excimer laser device using an ultraviolet corona preionization method.
［従来の技術］
従来の紫外線コロナ予備電離方式のエキシマレーザ装置
（特開昭６１−９１９８２号）について第２図を参照し
て説明する。[Prior Art] A conventional ultraviolet corona preionization type excimer laser device (Japanese Unexamined Patent Publication No. 61-91982) will be described with reference to FIG.
第２図の装置は、レーザ光軸を長平方向とする第１の主
放電電極１、この第１の主放電電極１の相対向するよう
に配設された第２の主放電電極２を備えており、第２の
主放電電極２は複数の導体２ａ、２ｂからなるスクリー
ン電極である。第２の主放電電極２の近傍には補助電極
（トリガ電極）３が配置されており、電極２．３間に誘
電体４が挟まれている。誘電体４は、この従来例におい
てはアルミナを主成分とするアルミナ磁器、又は石英ガ
ラス、セラミックス、カプトンフィルムなどよりなる。The device shown in FIG. 2 includes a first main discharge electrode 1 whose laser optical axis is in the elongated direction, and a second main discharge electrode 2 arranged to face the first main discharge electrode 1. The second main discharge electrode 2 is a screen electrode composed of a plurality of conductors 2a and 2b. An auxiliary electrode (trigger electrode) 3 is arranged near the second main discharge electrode 2, and a dielectric 4 is sandwiched between the electrodes 2.3. In this conventional example, the dielectric 4 is made of alumina porcelain whose main component is alumina, quartz glass, ceramics, Kapton film, or the like.
８はレーザガスを示す、第１の主放電電極１と補助電極
３には端子１０が接続されており、第２の主放電電極２
には端子９が接続されている。６は誘電体４と第２の主
放電電極２の間で生じる補助放電、７は主放電電極ｌと
２の間で生じる主放電を示している。8 indicates laser gas, a terminal 10 is connected to the first main discharge electrode 1 and the auxiliary electrode 3, and a terminal 10 is connected to the second main discharge electrode 2.
A terminal 9 is connected to the terminal 9. 6 indicates an auxiliary discharge occurring between the dielectric 4 and the second main discharge electrode 2, and 7 indicates a main discharge occurring between the main discharge electrodes 1 and 2.
以上の構成により、端子９．１０間にパルス電圧が印加
されると、そのパルス電圧の立上り部分において主放電
電極１．２間よりも電極間隔の短い第２の主放電電極２
と補助電極３の間で、まず補助放電６が発生する。この
補４助放電６から発せられる紫外光による光電離効果と
、この放電場から電子がスクリーン電極２ａ、２ｂを通
り抜けて主放電電極１．２の間の主放電空間に供給され
る効果により、上記主放電空間には１０４〜１０８個／
ｃ ｒｒｉ″以上の電子が均一に供給される（予備電
離）。With the above configuration, when a pulse voltage is applied between the terminals 9 and 10, the second main discharge electrode 2 whose electrode interval is shorter than that between the main discharge electrodes 1 and 2 at the rising part of the pulse voltage
First, an auxiliary discharge 6 occurs between the auxiliary electrode 3 and the auxiliary electrode 3. Due to the photoionization effect due to the ultraviolet light emitted from this auxiliary and auxiliary discharge 6, and the effect that electrons from this discharge field pass through the screen electrodes 2a and 2b and are supplied to the main discharge space between the main discharge electrodes 1.2, The above main discharge space has 104 to 108 pieces/
Electrons of cr ri'' or more are uniformly supplied (pre-ionization).
端子９．１０間に印加されるパルス電圧がさらに上昇し
、主放電電極１．２間の放電開始電圧に達すると、予め
空間に供給されていた電子が加速されて生ずる衝突電離
が急に盛んになり、空間的に拡がった主放電７が発生す
る。この主放電７によりレーザガス８が励起され、レー
ザ光が紙面と垂直方向に発振する。以上の動作を繰り返
すことにより、パルス性のレーザ光が連続して発振され
る。When the pulse voltage applied between the terminals 9 and 10 further increases and reaches the discharge starting voltage between the main discharge electrodes 1 and 2, the impact ionization caused by accelerating the electrons that were previously supplied to the space suddenly increases. , and a spatially expanded main discharge 7 is generated. Laser gas 8 is excited by this main discharge 7, and laser light oscillates in a direction perpendicular to the plane of the drawing. By repeating the above operations, pulsed laser light is continuously oscillated.
ところで、レーザ光を効率良く発振させるためには、相
対向する主放電電極１．２の間の広い空間にわたり、主
放電７を一様に発生させる必要があるが、このためには
、補助放電６を一様に発生して、−様な密度の予備電離
電子を主放電域に供給する必要がある。この従来装置に
おいては、これを実現するために、補助電極３と第２の
主放電電極２の間にアルミナ磁器などよりなる誘電体４
を介在させ、補助放電６が局部的に偏在するのを防止し
ている。また、第２の主放電電極２と補助電極３の間の
沿面絶縁距離を十分長くするために、補助電極３は端子
部分を除きアルミナ磁器で覆われている。By the way, in order to efficiently oscillate laser light, it is necessary to generate the main discharge 7 uniformly over a wide space between the opposing main discharge electrodes 1.2. It is necessary to uniformly generate 6 and supply pre-ionized electrons with a --like density to the main discharge region. In this conventional device, in order to realize this, a dielectric material 4 made of alumina porcelain or the like is placed between the auxiliary electrode 3 and the second main discharge electrode 2.
is interposed to prevent the auxiliary discharge 6 from being locally unevenly distributed. Furthermore, in order to make the creepage insulation distance between the second main discharge electrode 2 and the auxiliary electrode 3 sufficiently long, the auxiliary electrode 3 is covered with alumina porcelain except for the terminal portion.
エキシマレーザを繰り返して動作させるとレーザ出力は
漸時低下する。これは、補助放電６、及び主放電７によ
り発生するハロゲンもしくはハロゲン化合物の励起種あ
るいはイオンが電極１．２．３及びこの周辺の構成物で
ある誘電体４などと反応して、レーザ発振に有害な放電
生成物を生じると共に、レーザガス中のＨＣＩｔもしく
はＦ２の濃度を減少させるからである。繰り返し動作を
行なった場合のレーザ出力の減少する割合は、レーザガ
スとして反応性の高いフッ素系のガスを含む場合の方が
、塩素系のガスを含む場合に比べて大きい。この従来装
置におりては、誘電体４の材料としてハロゲンガスと反
応しにくいアルミナを主成分とするアルミナ磁器を用い
ることにより、レーザガスの長寿命化を図りでいる。When the excimer laser is operated repeatedly, the laser output gradually decreases. This is because excited species or ions of halogens or halogen compounds generated by the auxiliary discharge 6 and the main discharge 7 react with the electrodes 1.2.3 and the dielectric material 4, which is a component in the vicinity, resulting in laser oscillation. This is because harmful discharge products are generated and the concentration of HCIt or F2 in the laser gas is reduced. The rate at which the laser output decreases when repeated operations are performed is greater when the laser gas contains a highly reactive fluorine-based gas than when it contains a chlorine-based gas. In this conventional device, the life of the laser gas is extended by using alumina porcelain whose main component is alumina, which does not easily react with halogen gas, as the material of the dielectric 4.
第２図に示した従来装置にあっては、アルミナ磁器の構
造が複雑で厚みが厚いため、６ｉ１器として焼成するの
が困難で、また価格が高くなるという問題点があった。In the conventional apparatus shown in FIG. 2, the structure of the alumina porcelain is complicated and the thickness is large, so it is difficult to fire it as a 6I1 pottery, and the price is high.
かかる問題点を解決しようとするものとして特開昭６４
−２１９８０号には、誘電体の少なくとも第２の主放電
電極２と相対する部分が、アルミナを主成分とするセラ
ミックにより溶射された溶射皮膜からなっているものが
提案されている。In order to solve this problem, Japanese Patent Application Laid-open No. 1983
No. 21980 proposes that at least the portion of the dielectric that faces the second main discharge electrode 2 is made of a thermally sprayed coating of ceramic containing alumina as a main component.
なお、上記アルミナの代わりに、誘電体として石英を用
いたものも知られている。Note that, instead of the alumina described above, a device using quartz as a dielectric material is also known.
［発明が解決しようとする課題］
紫外線コロナ予備電離方式のエキシマレーザ装置におい
ては、誘電体として用いられているアルミナや石英は誘
電率が小さいので予備電離が弱く、発振効率が低いとい
う問題があフた。[Problems to be Solved by the Invention] Excimer laser devices using ultraviolet corona pre-ionization method have the problem that alumina and quartz used as dielectric materials have a low dielectric constant, so pre-ionization is weak, and oscillation efficiency is low. Futa.
また、溶射の場合には密着性や緻密性が低いという欠点
がある。更に、補助電極と誘電体との間に間隙が存在し
、浮遊容量が大きいという問題もあった。Additionally, thermal spraying has the drawback of low adhesion and density. Furthermore, there is a problem that a gap exists between the auxiliary electrode and the dielectric material, resulting in a large stray capacitance.
［課題を解決するための手段］
本発明のエキシマレーザ装置は、誘電体として気相法に
より形成された高誘電率セラミックを用いたものである
。この気相法としては、スパッタリングやＣＶ−Ｄ法な
どを採用できる。[Means for Solving the Problems] The excimer laser device of the present invention uses a high dielectric constant ceramic formed by a vapor phase method as a dielectric. As this vapor phase method, sputtering, CV-D method, etc. can be adopted.
本発明では、この高誘電率セラミックを第２の主放電電
極に蒸着させて形成するのが好適である。In the present invention, it is preferable to form this high dielectric constant ceramic by vapor depositing it on the second main discharge electrode.
本発明では、高話電率セラミックとして、５ｒＴｉ０３
（誘電率３３０）、ＢａＴｉＯ３、Ｐ ｂ Ｔ ｉ
Ｏ３が挙げられる。In the present invention, 5rTi03 is used as a high-density ceramic.
(permittivity 330), BaTiO3, P b Ti
O3 is mentioned.
［作用］
誘電体として高誘電率セラミックを用いたことにより強
力な紫外線コロナ予備電離を行なうことかできるので、
高効率発振が可能となる。[Function] By using a high dielectric constant ceramic as a dielectric, strong ultraviolet corona pre-ionization can be performed.
Highly efficient oscillation is possible.
この高誘電率セラミックは気相法により形成されるので
、電極の形状に合わせて誘電体を形成でき、誘電体の厚
さも自由に制御できる。Since this high dielectric constant ceramic is formed by a vapor phase method, the dielectric material can be formed to match the shape of the electrode, and the thickness of the dielectric material can also be freely controlled.
この高誘電率セラミックを補助電極に気相蒸着させると
、溶射に比較して誘電体と補助電極との密着度が向上す
るので、間隙の浮遊容量が減少する。また、誘電体の緻
密度も向上する。When this high dielectric constant ceramic is vapor-deposited on the auxiliary electrode, the degree of adhesion between the dielectric and the auxiliary electrode is improved compared to thermal spraying, and the stray capacitance in the gap is reduced. Moreover, the density of the dielectric material is also improved.
［実施例コ 以下、第１図を参照して実施例について説明する。[Example code] An embodiment will be described below with reference to FIG.
第１図において、補助電極３の表面全体に高誘電率セラ
ミック（本実施例では５ｒＴｉＯａ）が気相法により形
成されている。本実施例では、固体の５ｒＴｉＯａをス
パッタターゲットとしたスパッタリングにより、補助電
ｉ３の表面全体にＳ ｒＴ ｉ Ｏｓを厚さ数ｍｍに蒸
着しである。このＳ ｒＴ ｉ ０３よりなる誘電体４
の表面に接するようにして第２の主放電電極２が設けら
れている。In FIG. 1, a high dielectric constant ceramic (5rTiOa in this example) is formed on the entire surface of the auxiliary electrode 3 by a vapor phase method. In this example, S rTi Os is deposited to a thickness of several mm over the entire surface of the auxiliary electrode i3 by sputtering using solid 5rTiOa as a sputtering target. Dielectric material 4 made of this S rT i 03
A second main discharge electrode 2 is provided so as to be in contact with the surface.
第１図のその他の構成は第２図と同様であり、同一符号
は同一部材を示している。The rest of the structure in FIG. 1 is the same as in FIG. 2, and the same reference numerals indicate the same members.
本実施例のエキシマレーザ装置は、
（１） ＳｒＴｉＯ３（誘電率３３０）は石英の誘電
体に比較して、誘電率が１００倍はどになり、強力なＵ
■コロナ予備電離が達成でき、高効率発振が可能になる
。The excimer laser device of this example has the following features: (1) SrTiO3 (dielectric constant 330) has a dielectric constant 100 times higher than that of quartz dielectric, and has a strong U
■Corona pre-ionization can be achieved, enabling high-efficiency oscillation.
（２） 誘電体４と補助電極３との密七度が向上するの
で間隙の浮遊容量が減少する。(2) Since the density between the dielectric 4 and the auxiliary electrode 3 is improved, the stray capacitance in the gap is reduced.
（３） 補助電極の形状に合わせて誘電体が形成！き、
誘電体の厚みも自由に制御できる。また、誘電体の緻密
性も向上する。(3) The dielectric is formed to match the shape of the auxiliary electrode! tree,
The thickness of the dielectric can also be controlled freely. Moreover, the density of the dielectric material is also improved.
などの効果を有する。It has the following effects.
上記実施例においては、第２の主放電電極２はスクリー
ン電極とされているが、この第２の主放電電極は開孔部
を有するものであれば良く、メツシュ形状、パンチング
メタル、細い丸棒をスペースをあけて多数個配置したも
の等であっても良い。In the above embodiment, the second main discharge electrode 2 is a screen electrode, but the second main discharge electrode may be of any type having an opening, such as a mesh shape, a punched metal, or a thin round bar. It is also possible to arrange a large number of them with spaces between them.
上記実施例では、第１の主放電電極１に対して第２の主
放電電極２の背面に補助電極３を配置する構造を示した
が、本発明では補助電極３が主放電電極２の側部に配置
される構造であっても良い。In the above embodiment, a structure is shown in which the auxiliary electrode 3 is arranged on the back side of the second main discharge electrode 2 with respect to the first main discharge electrode 1, but in the present invention, the auxiliary electrode 3 is arranged on the side of the main discharge electrode 2. The structure may be arranged in a section.
また、上記実施例では、第２の主放電電極２と誘電体４
とを密着して配置する場合を説明したが、両者を離して
配置しても良い。Further, in the above embodiment, the second main discharge electrode 2 and the dielectric material 4
Although the case where the two are placed in close contact with each other has been described, the two may be placed apart.
上記実施例においては、補助電極３は主放電電極１に接
続することにより、端子９と１０にパルス電圧を印加す
ると自動的に補助電極３と第２の主放電電極２の間に電
圧が印加される場合を示したが、他の回路構成によって
これを実現しても良く、さらには補助電極３と第２の主
放電電極２の間に別電源を接続しても良い。In the above embodiment, the auxiliary electrode 3 is connected to the main discharge electrode 1, so that when a pulse voltage is applied to the terminals 9 and 10, a voltage is automatically applied between the auxiliary electrode 3 and the second main discharge electrode 2. Although the case where this is done is shown, this may be realized by other circuit configurations, and furthermore, a separate power source may be connected between the auxiliary electrode 3 and the second main discharge electrode 2.
［効果］
以上の通り、本発明によると、強力な紫外線コロナ予備
電離により高効率全県が可能となる。また、補助電極の
形状に合わせて誘電体が形成でき、誘電体の緻密性も増
し、誘電体の厚みも自由に制御できる。[Effects] As described above, according to the present invention, high efficiency can be achieved throughout the prefecture by strong ultraviolet corona pre-ionization. Furthermore, the dielectric can be formed to match the shape of the auxiliary electrode, the density of the dielectric can be increased, and the thickness of the dielectric can be freely controlled.
本発明において、高誘電率セラミックを補助電極に蒸着
させるようにすると、誘電体と補助電極との密着度が向
上するので間隙の浮遊容量が減少する。In the present invention, when a high dielectric constant ceramic is deposited on the auxiliary electrode, the degree of adhesion between the dielectric and the auxiliary electrode is improved, so that the stray capacitance in the gap is reduced.
第１図は実施例を示す断面図、第２図は従来例を示す断
面図である。
１・・・第１の主放電電極、
２・・・第２の主放電電極、
３・・・補助電極、
４・・・誘電体（高話電率セラミック）、８・・・レー
ザガス。FIG. 1 is a sectional view showing an embodiment, and FIG. 2 is a sectional view showing a conventional example. DESCRIPTION OF SYMBOLS 1... 1st main discharge electrode, 2... 2nd main discharge electrode, 3... Auxiliary electrode, 4... Dielectric material (high conductivity ceramic), 8... Laser gas.
Claims (2)
この第１の主放電電極と対向して配置され複数の開孔を
有する第２の主放電電極と、上記第２の主放電電極に対
して誘電体を挟んで配設された補助電極とを備えたエキ
シマレーザ装置において、前記誘電体は気相法により形
成された高誘電率セラミックであることを特徴とするエ
キシマレーザ装置。(1) a first main discharge electrode placed in the laser gas;
A second main discharge electrode is arranged opposite to the first main discharge electrode and has a plurality of openings, and an auxiliary electrode is arranged with a dielectric interposed between the second main discharge electrode and the second main discharge electrode. 1. An excimer laser device comprising: an excimer laser device, wherein the dielectric material is a high dielectric constant ceramic formed by a vapor phase method.
してあることを特徴とする特許請求の範囲第１項に記載
のエキシマレーザ装置。(2) The excimer laser device according to claim 1, wherein the dielectric material is formed by vapor-depositing the second main discharge electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13663789A JPH033282A (en) | 1989-05-30 | 1989-05-30 | Excimer laser device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13663789A JPH033282A (en) | 1989-05-30 | 1989-05-30 | Excimer laser device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH033282A true JPH033282A (en) | 1991-01-09 |
Family
ID=15179965
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13663789A Pending JPH033282A (en) | 1989-05-30 | 1989-05-30 | Excimer laser device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH033282A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6511571B2 (en) | 1998-07-23 | 2003-01-28 | Molecular Optoelectronics Corporation | Method for fabricating an optical waveguide |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6267175A (en) * | 1985-09-17 | 1987-03-26 | Masaru Okada | Production of thin ferroelectric film |
| JPS63250184A (en) * | 1987-04-06 | 1988-10-18 | Toshiba Corp | Cathode for carbon dioxide laser device |
-
1989
- 1989-05-30 JP JP13663789A patent/JPH033282A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6267175A (en) * | 1985-09-17 | 1987-03-26 | Masaru Okada | Production of thin ferroelectric film |
| JPS63250184A (en) * | 1987-04-06 | 1988-10-18 | Toshiba Corp | Cathode for carbon dioxide laser device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6511571B2 (en) | 1998-07-23 | 2003-01-28 | Molecular Optoelectronics Corporation | Method for fabricating an optical waveguide |
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