JPH0332U

JPH0332U -

Info

Publication number: JPH0332U
Application number: JP5418290U
Authority: JP
Priority date: 1990-05-25
Filing date: 1990-05-25
Publication date: 1991-01-07

Description

[Brief explanation of drawings]

第１図は本考案の装置のコンソールの斜視図、
第２図はそのモジユールの斜視図、第３図はモジ
ユール内部の詳細な斜視図、第４図は本考案の装
置の真空系およびガス供給系を示す図である。１０…コンソール、１１…ベース、１２…上部
、１３…モジユール、１４…供給エレベータ、１
５…エアトラツク、１６…アライメントステージ
、１８…挿入フインガ、１９…取出エレベータ、
２０…ロードモジユール、２１…プロセスモジユ
ール、２４…旋回アーム。 FIG. 1 is a perspective view of the console of the device of the present invention;
FIG. 2 is a perspective view of the module, FIG. 3 is a detailed perspective view of the inside of the module, and FIG. 4 is a diagram showing the vacuum system and gas supply system of the apparatus of the present invention. DESCRIPTION OF SYMBOLS 10...Console, 11...Base, 12...Upper part, 13...Module, 14...Supply elevator, 1
5... Air track, 16... Alignment stage, 18... Insertion finger, 19... Takeout elevator,
20...Load module, 21...Process module, 24...Swivel arm.

Claims

[Claims for Utility Model Registration] 1. An apparatus for pre-processing, etching and stripping silicon wafers in one module, having a first or large chamber 20 for pre-processing and stripping the wafer; A second or wafer etching chamber 21 is arranged within this first chamber, with a device for maintaining the pressure in the chamber at a predetermined value, and a first device 17, for loading and unloading wafers into and from the larger chamber 20.
18 and second devices 22 and 24 for transporting wafers between the first chamber 20 and the second chamber 21,
The wafer etching chamber 21 is adapted to etch a first wafer while a second wafer is preprocessed in the larger chamber 20, the second chamber containing an electrode arrangement and equipment for supporting and sealing the electrode. 1. An apparatus for preprocessing, etching and stripping silicon wafers, characterized in that the apparatus comprises: 2. Utility model registration claim 1, wherein the electrode device comprises a first electrode 21b having a flat surface for supporting a wafer and a second electrode 21d having a flat surface disposed above the first electrode. Device. 3. The second chamber 21 has a platform 21c provided on the first electrode 21b and a lid 21a supporting the second electrode 21d, and this lid forms an airtight seal with the platform to open the second chamber. 3. The device according to claim 2, movable into a first position in which it closes and a second position in which it opens this second chamber. 4 The first chamber 20 has an elevator 22 having upper and lower shelves 22a and 22b, and a wafer is connected to the first electrode 21.
Arm devices 24, 25 for transferring from c to the lower rack 22b and from the upper rack 22a to the first electrode 21b
The device according to claim 3 of the utility model registration claim. 5. Practical embodiment in which the first chamber 20 has a base 27 supporting the platform 21c, the elevator 22 and the arm devices 24, 25, and a cover arranged so as to form, together with the base 27, a hermetically sealed first chamber 20. The device according to claim 4 of the patent registration claim. 6. A door 30 in which the cover has a hole 17 through which wafers are taken in and out of the first chamber 20 and which is normally closed airtight, and a first device 31 that opens and closes this door.
, 32 of the claim 5 for utility model registration.
Apparatus described in section. 7. The device according to any one of claims 3 to 6, which includes second devices 33 and 34 for moving the lid 21a between the first and second positions. 8. The apparatus according to claim 7, which has a third device 18, 70 for moving wafers into and out of the elevator 22 through the door 30. 9. A fourth device 2 in which the elevator device can raise and lower the elevator 22 to a position where the lower rack 22b receives the wafer from the first electrode 21b or transfers this wafer from the upper rack 22a to the first electrode.
3, the device according to claim 4 or 8 of the utility model registration claim. 10 A fifth device 53 that maintains the second chamber 21 at a predetermined pressure, a sixth device 41 that flows etching gas into the second chamber, and a seventh device that ionizes the gas to generate etching gas plasma in the second chamber. device 38,
39. The device according to claim 9 of the utility model registration claim. 11. The apparatus according to claim 10, comprising an eighth device 71 for introducing ionized gas into the first chamber 20 for pre-processing or stripping the wafer.