JPH0333225B2 - - Google Patents

Info

Publication number
JPH0333225B2
JPH0333225B2 JP58178215A JP17821583A JPH0333225B2 JP H0333225 B2 JPH0333225 B2 JP H0333225B2 JP 58178215 A JP58178215 A JP 58178215A JP 17821583 A JP17821583 A JP 17821583A JP H0333225 B2 JPH0333225 B2 JP H0333225B2
Authority
JP
Japan
Prior art keywords
current
transistor
heater wire
resistor
heating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58178215A
Other languages
Japanese (ja)
Other versions
JPS6070345A (en
Inventor
Mikio Mochizuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nohmi Bosai Ltd
Original Assignee
Nohmi Bosai Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nohmi Bosai Ltd filed Critical Nohmi Bosai Ltd
Priority to JP58178215A priority Critical patent/JPS6070345A/en
Publication of JPS6070345A publication Critical patent/JPS6070345A/en
Publication of JPH0333225B2 publication Critical patent/JPH0333225B2/ja
Granted legal-status Critical Current

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Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/04Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
    • G01N27/12Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
    • G01N27/122Circuits particularly adapted therefor, e.g. linearising circuits
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N33/00Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
    • G01N33/0004Gaseous mixtures, e.g. polluted air
    • G01N33/0009General constructional details of gas analysers, e.g. portable test equipment
    • G01N33/007Arrangements to check the analyser

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  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • Pathology (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Combustion & Propulsion (AREA)
  • Food Science & Technology (AREA)
  • Medicinal Chemistry (AREA)
  • Testing Of Short-Circuits, Discontinuities, Leakage, Or Incorrect Line Connections (AREA)
  • Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
  • Emergency Alarm Devices (AREA)

Description

【発明の詳細な説明】 本発明はガス漏れ検知装置に係り、特にヒータ
線加熱のためにパルス電源を使うとともにヒータ
線に電圧を印加している期間と印加していない期
間にわたり、常にヒータ線の断線を検出可能とし
たものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a gas leak detection device, and in particular uses a pulse power source to heat a heater wire, and constantly detects a gas leakage between the heater wire during a period when a voltage is applied to the heater wire and during a period when a voltage is not applied to the heater wire. This makes it possible to detect wire breaks.

従来からCO、メタン、LPG、水素並びにその
他の可燃性ガスを感知する物質としてWO3
SnO、ZnO等の還元型半導体とCoO、NiO、
Cu2O等の酸化型半導体と称する(以下これ等を
金属酸化物半導体と総称する)ものが知られてお
り、ガスイオンを吸着したときに生ずるこれ等金
属酸化物半導体の導電度或は抵抗値の変化による
電気変化を利用して下記の構成のようにガス検知
素子を単体として作成し警報装置と組合せガス漏
れ警報装置に用いられている。このガス検知素子
としては、通常第1図に示すようにヒータ線1a
を磁器製管1b内を貫通せしめて更にこの磁器製
管1bの外側面に金属酸化物半導体或は抵抗体層
1cを設けその上に電極1d1,1d2を間隔をおい
て対峙せしめた所謂傍熱型素子と第2図に略線図
で示すようにヒータ線が1対の電極の一方1d3
兼ねた直熱型素子とが用いられている。又ガス検
知素子1としては第1図の場合の変形としてヒー
タ線1aを磁器製管1b内を通すことなく半導体
層または抵抗体層1cの外側に設けることもでき
る。尚、これ等ガス検知素子にヒータ線を使用す
るのは、通常前述の半導体を100℃〜400℃の高温
度に加熱するとガスイオンの吸着反応が促進され
るので微量のガスを感知できるようにガスの検出
感度をあげるためであるが、なかには通常はヒー
タ線を加熱せず低い温度状態でガスを吸着せしめ
ることにより、その導電度が変ることを利用する
場合もあり、この場合はガスを素子から脱着する
ためにヒータ線を用いるのであるが、本発明装置
は後者のヒータ線を間欠的に加熱するタイプに関
するものである。このようなガス検知素子を用い
たガス漏れ警報装置では常に正常な動作態勢を必
要とするが、しばしば断線事故が起るため、ガス
検知素子を加熱するヒータ線に流れる電流を監視
して断線を検出したり半導体がけずれたり傷がつ
いたり電極の接触不良つまり、ガス検知素子の破
損に起因するガス検知素子の出力の有無を監視し
て断線を検出したりすることが提案されている
が、ヒータ線の断線とガス検知素子の破損の検出
を同時に検出表示することは考えられなかつた。
しかもガス検知素子は比較的寿命が短いため常に
ガス検知素子の動作には監視が必要であり、ガス
検知素子の故障によるガス漏れ時に不作動の事故
による危険を防止することは重要である。
WO 3 has traditionally been used as a substance that senses CO, methane, LPG, hydrogen, and other flammable gases.
Reduced semiconductors such as SnO, ZnO, CoO, NiO,
Oxidized semiconductors such as Cu 2 O (hereinafter collectively referred to as metal oxide semiconductors) are known, and the conductivity or resistance of these metal oxide semiconductors that occurs when gas ions are adsorbed is known. A gas detection element having the configuration shown below is made as a single unit by utilizing the electrical change caused by the change in value, and is used in combination with an alarm device for a gas leak alarm device. This gas detection element usually uses a heater wire 1a as shown in FIG.
is passed through the inside of the porcelain tube 1b, and a metal oxide semiconductor or resistor layer 1c is provided on the outer surface of the porcelain tube 1b, and electrodes 1d 1 and 1d 2 are placed thereon facing each other at intervals. An indirectly heated type element and a directly heated type element in which a heater wire also serves as one of a pair of electrodes 1d3 are used, as shown schematically in FIG. Further, as a modification of the case shown in FIG. 1, the gas detection element 1 can also be provided outside the semiconductor layer or resistor layer 1c without passing the heater wire 1a through the ceramic tube 1b. The reason why heater wires are used in these gas detection elements is that heating the aforementioned semiconductor to a high temperature of 100°C to 400°C accelerates the adsorption reaction of gas ions, making it possible to detect trace amounts of gas. This is to increase the gas detection sensitivity, but in some cases, the conductivity changes by adsorbing the gas at a low temperature without heating the heater wire. In this case, the gas is A heater wire is used for attaching and detaching the wire, and the present invention relates to the latter type in which the heater wire is intermittently heated. Gas leak alarm systems using such gas detection elements require normal operation at all times, but disconnections often occur, so the current flowing through the heater wire that heats the gas detection element must be monitored to prevent disconnections. It has been proposed to detect wire breakage by monitoring the presence or absence of output from the gas sensing element due to damage to the gas sensing element, such as damage to the semiconductor or poor electrode contact. It was inconceivable to simultaneously detect and display the detection and display of heater wire breakage and gas detection element damage.
Moreover, since the gas detection element has a relatively short lifespan, it is necessary to constantly monitor the operation of the gas detection element, and it is important to prevent the danger of non-operation in the event of gas leakage due to failure of the gas detection element.

このような点を考慮して本発明ではガス検知素
子のヒータ線の断線と半導体の損傷切断或は半導
体と両電極との接触不良等による素子の破損事故
をも検出表示することができるガス漏れ警報装置
を提供するものである。
Taking these points into consideration, the present invention provides a gas leakage system that can detect and display element damage caused by disconnection of the heater wire of the gas detection element, damage to the semiconductor, or poor contact between the semiconductor and both electrodes. The present invention provides an alarm device.

更に本発明では、ヒータ線の加熱電源としてパ
ルス発生器よりのパルス電圧を用いたもので、こ
れにより検知素子を高温状態と低温状態つまり加
熱期間と加熱停止期間をもたせることになり、ガ
ス検知素子の特性であるガス検出とガス脱着とを
円滑に行うものである。
Furthermore, in the present invention, a pulse voltage from a pulse generator is used as a heating power source for the heater wire, and this causes the sensing element to have a high temperature state and a low temperature state, that is, a heating period and a heating stop period. Gas detection and gas desorption, which are the characteristics of

尚パルス電圧を用いることによりガス検知素子
を低温にするためにヒータ線に電圧を印加しない
期間をこれにあてることになるが、これはヒータ
に電流が流れない点では断線と同じ現象をもつこ
とになる。
By using a pulse voltage, a period during which no voltage is applied to the heater wire is used to lower the temperature of the gas detection element, but this is the same phenomenon as a disconnection in that no current flows through the heater. become.

本発明ではこのようなヒータに電圧を印加して
いない期間においてもガス検知素子のヒータ線並
びに半導体等における破損事故を確実に検出して
故障の表示警報を行うものである。
The present invention reliably detects damage to the heater wire, semiconductor, etc. of the gas detection element even during a period when no voltage is applied to the heater, and issues a failure display/alarm.

次に本発明の一実施例回路構成図について第3
図で説明する。尚、第4図は第3図における主要
部分のパルスジエネレータの波形に応じた時間線
図である。
Next, see the third section regarding the circuit configuration diagram of one embodiment of the present invention.
This will be explained with a diagram. Incidentally, FIG. 4 is a time diagram corresponding to the waveform of the pulse generator of the main part in FIG. 3.

図でPGはパルスジエネレータ、1は第1図で
示すガス検知素子であり、ヒータ線1aと半導体
1c(正確には電極1d1と1d2間に接続される半
導体の導電度或は抵抗値)とを監視回路接続に含
んでいる。パルスジエネレータPGにダイオード
Dをへて接続する側のヒータ線1a+電源より直
列抵抗R1,R2をへて接続され、抵抗R1とR2の接
続部はトランジスタQ1のベースに接続される。
ヒータ線1aの他端は抵抗R3をへて接地される
とともに抵抗R4をへてトランジスタQ2のベース
に接続される。ガス検知素子1の半導体1cの1
方電極側は抵抗R5をへて接地されるとともに比
較器COM1の+側入力端子と比較器COM2の−側
入力端子に接続され、他方電極側は+電源端子
B1に接続される。トランジスタQ1のコレクタは
抵抗R7をへて接地されるとともにノア回路NOR
の一方端子に接続され、トランジスタQ2のコレ
クタは抵抗R6をへて+電源端子B1に接続される
とともに、インバータINVをへてノア回路NOR
の他端子に接続される。比較器COM1の−側入力
端子は抵抗R4をへて+電源端子B1に、又抵抗R9
をへて接地Eする。又比較器COM1の出力側は抵
抗R10,R11をへて接地されるとともに、抵抗R10
とR11の接続部はトランジスタ(又はサイリスタ
のようなゲート極付半導体)Q3のゲート極に結
ばれ、このトランジスタQ3のアノードは警報表
示灯LED1抵抗R12をへて警報表示用端子B2に接
続され、トランジスタQ3のカソードは接地Eさ
れる。又ノア回路NORの出力側は抵抗R13をへ
て、比較器COM2の+側入力端子に接続され、又
この+側入力端子は抵抗R14をへて+電源端子B1
に接続される。比較器COM2の出力側は抵抗R15
R16をへて接地されるとともに、抵抗R15とR16
接続部がトランジスタ(又はサイリスタのような
ゲート極付半導体)Q4のゲートに結ばれ、トラ
ンジスタQ4のアノードは故障表示灯LED2をへて
故障表示端子B3に接続され、トランジスタQ4
カソードは接地される。第4図はパルスジエネレ
ータPGのパルス電圧に対しヒータ線1a、抵抗
R3の電圧降下、トランジスタQ1,Q2のオンオフ、
インバータ回路INVの反転状況、ノア回路NOR、
比較器COM2の出力並びにトランジスタQ4の出力
に関する波形を示している。
In the figure, PG is a pulse generator, 1 is the gas detection element shown in Figure 1, and the heater wire 1a and the semiconductor 1c (more precisely, the conductivity or resistance value of the semiconductor connected between the electrodes 1d 1 and 1d 2 ). ) are included in the supervisory circuit connection. The heater wire 1a on the side connected to the pulse generator PG through the diode D is connected to the power supply through the series resistors R 1 and R 2 , and the connection between the resistors R 1 and R 2 is connected to the base of the transistor Q 1 . Ru.
The other end of the heater wire 1a is grounded through a resistor R3 and connected to the base of a transistor Q2 through a resistor R4 . 1 of the semiconductor 1c of the gas detection element 1
One electrode side is grounded through resistor R5 and connected to the + side input terminal of comparator COM 1 and the - side input terminal of comparator COM 2 , and the other electrode side is connected to the + side input terminal of comparator COM 2.
Connected to B 1 . The collector of transistor Q1 is grounded through resistor R7 and connected to NOR circuit NOR.
The collector of the transistor Q2 is connected to the + power supply terminal B1 through the resistor R6 , and the NOR circuit NOR through the inverter INV.
Connected to the other terminal. The negative input terminal of comparator COM 1 passes through resistor R 4 to + power supply terminal B 1 , and also connects to resistor R 9.
and ground E. In addition, the output side of the comparator COM 1 is grounded through resistors R 10 and R 11 , and also connected to the resistor R 10
The connection between R11 and R11 is connected to the gate pole of a transistor (or a semiconductor with a gate pole such as a thyristor) Q3 , and the anode of this transistor Q3 is connected to the warning indicator LED 1 resistor R12 to the alarm display terminal. B 2 and the cathode of transistor Q 3 is grounded E. The output side of the NOR circuit NOR is connected to the + side input terminal of the comparator COM 2 through the resistor R 13 , and this + side input terminal is connected to the + power supply terminal B 1 through the resistor R 14 .
connected to. The output side of comparator COM 2 is resistor R 15 ,
It is grounded through R 16 , and the connection between resistors R 15 and R 16 is connected to the gate of transistor (or semiconductor with a gate electrode such as a thyristor) Q 4 , and the anode of transistor Q 4 is connected to the fault indicator LED. 2 to the failure indicating terminal B3 , and the cathode of the transistor Q4 is grounded. Figure 4 shows the heater wire 1a and resistance for the pulse voltage of the pulse generator PG.
Voltage drop of R 3 , on/off of transistors Q 1 and Q 2 ,
Inversion status of inverter circuit INV, NOR circuit NOR,
The waveforms for the output of comparator COM 2 as well as the output of transistor Q 4 are shown.

なお、本実施例では、抵抗R3とトランジスタ
Q2が加熱用電流を検出する第1の電流検出手段
を、抵抗R1,R2とトランジスタQ1とダイオード
Dが第2の電流検出手段を、インバータ回路
INVとノア回路NORがヒータ断線判別手段を、
抵抗R5が第3の電流検出手段を、比較器COM2
抵抗R13,R14が半導体断線判別手段を、それぞ
れ構成している。
Note that in this example, the resistor R3 and the transistor
Q 2 serves as the first current detection means for detecting the heating current, resistors R 1 , R 2 , transistor Q 1 and diode D serve as the second current detection means, and the inverter circuit
INV and NOR circuit NOR are the heater burnout determination means.
The resistor R 5 constitutes the third current detection means, and the comparator COM 2 and the resistors R 13 and R 14 constitute the semiconductor disconnection determining means.

次に第3図に関して第4図と関連づけて本発明
装置の動作説明を行う。まずガス検知素子1が正
常な場合、パルスジエネレータPGよりのパルス
電圧に従つてヒータ線1aに電圧が印加される期
間には抵抗R3の電圧降下が発生し、トランジス
タQ2はオンとなるが、トランジスタQ1はオフと
なり、ノア回路NORのトランジスタQ1側の入力
はL(ロー)となり、又トランジスタQ2側はオン
で、インバータ回路INVをへてノア回路NORの
他方の入力はH(ハイ)となり、ノア回路NORの
出力はLで比較器COM2の+側入力端子には電源
電圧を抵抗R14とR13で分割した電圧が加わる。
又比較器COM2の−側入力端子には半導体1cに
流れる電流が正常であれば、予め抵抗R5の電圧
降下が+側入力端子電圧より高く設定されていて
比較器COM2は出力をださず、トランジスタQ4
オフで故障表示灯LED2は点灯しない。又パルス
ジエネレータPGよりのパルス電圧に従つてヒー
タ線1aに電圧が印加されない期間には抵抗R3
の電圧降下はなくて、トランジスタQ2はオフで
インバータ回路INVをへてノア回路NORの一端
にはLが与えられる。又トランジスタQ1は、パ
ルスジエネレータPGの出力を生じない時には抵
抗R1に生じる電圧降下によりオンとなり、ノア
回路NORの他端にHが与えられ、ノア回路NOR
の出力はLでこの場合も、比較回路COM2は出力
をださずトランジスタQ4をオフにしたまゝであ
り、故障表示灯LED2も点灯しない。
Next, the operation of the apparatus of the present invention will be explained with reference to FIG. 3 in conjunction with FIG. 4. First, when the gas detection element 1 is normal, a voltage drop across the resistor R 3 occurs during the period when the voltage is applied to the heater wire 1a according to the pulse voltage from the pulse generator PG, and the transistor Q 2 is turned on. However, transistor Q 1 is turned off, and the input on the transistor Q 1 side of the NOR circuit NOR becomes L (low), and the transistor Q 2 side is on, and the other input of the NOR circuit NOR becomes H after passing through the inverter circuit INV. (High), the output of the NOR circuit NOR is L, and a voltage obtained by dividing the power supply voltage by resistors R14 and R13 is applied to the + side input terminal of the comparator COM2 .
In addition, if the current flowing through the semiconductor 1c is normal at the negative input terminal of comparator COM 2 , the voltage drop across resistor R5 is set higher than the voltage at the positive input terminal, and comparator COM 2 will output no output. However, transistor Q 4 is off and failure indicator LED 2 does not light up. Also, during the period when no voltage is applied to the heater wire 1a according to the pulse voltage from the pulse generator PG, the resistance R 3
There is no voltage drop, transistor Q2 is off, and L is applied to one end of the NOR circuit NOR through the inverter circuit INV. Also, when the transistor Q1 does not produce an output from the pulse generator PG, it is turned on due to the voltage drop generated across the resistor R1 , and H is applied to the other end of the NOR circuit NOR.
The output of is L, and in this case as well, the comparator circuit COM 2 does not output and the transistor Q 4 remains off, and the failure indicator LED 2 does not light up either.

しかし検知素子1のヒータ線1aが断線した場
合、トランジスタQ1,Q2は共にオフとなり、ノ
ア回路NORの出力がHとなつて比較器COM2
+側入力端子電圧が高くなり、比較器COM2は出
力をとりだし、トランジスタQ4のゲートに電圧
が加えられてトランジスタQ4はオンとなり、故
障表示灯LED2は点灯し故障を知らせるとともに
故障信号を外部の受信機側に与える。又検知素子
1の半導体1cが断線した場合、抵抗R5の電圧
降下はほゞ0Vで比較器COM1は働かないが、比
較器COM2の−側入力端子は低下し+側入力端子
の抵抗R14とR13による分割電圧より低くなるの
で比較器COM2の出力がとりだされ、トランジス
タQ4のゲート電圧を適当にあげるので、これを
オンとし、故障表示灯LED2を点灯して、故障表
示を行う。尚ガス検知素子のガス検知にあたつて
は半導体1cの抵抗値が変わり減じることによ
り、流れる電流は増して抵抗R5の電圧降下が大
となり、比較器COM1の−側入力端子に加わる+
電源端子より抵抗R8をへた電圧より大となり比
較器COM1は出力をとりだしトランジスタQ3のゲ
ート電圧を上昇せしめて、これをオンとし警報表
示灯LED1を点灯するとともに警報信号を受信機
側に与えるのである。
However, when the heater wire 1a of the sensing element 1 is disconnected, both the transistors Q 1 and Q 2 are turned off, the output of the NOR circuit NOR becomes H, and the voltage at the + side input terminal of the comparator COM 2 becomes high. COM 2 takes out the output, voltage is applied to the gate of transistor Q 4 , transistor Q 4 is turned on, failure indicator LED 2 lights up, notifying the failure and giving a failure signal to the external receiver side. If the semiconductor 1c of the sensing element 1 is disconnected, the voltage drop across the resistor R5 will be approximately 0V and the comparator COM 1 will not work, but the negative input terminal of the comparator COM 2 will drop and the resistance at the positive input terminal will decrease. Since it is lower than the voltage divided by R 14 and R 13 , the output of comparator COM 2 is taken out, and the gate voltage of transistor Q 4 is increased appropriately, so it is turned on and the fault indicator LED 2 is lit. Displays a fault. When detecting gas with the gas detection element, as the resistance value of the semiconductor 1c changes and decreases, the flowing current increases and the voltage drop across the resistor R5 becomes large, resulting in a voltage of + applied to the negative input terminal of the comparator COM1 .
The voltage across resistor R 8 from the power supply terminal is greater than the voltage, so comparator COM 1 takes out an output and increases the gate voltage of transistor Q 3 , which turns it on and lights up alarm indicator LED 1 , as well as transmits the alarm signal to the receiver. It is given to the other side.

第5図はガス検知素子のヒータと電極の一方を
兼用せしめた場合の実施例回路構成図で、第3図
のように受信機送出タイプと異りガス探知器タイ
プのものであるが、勿論受信機送出タイプに用い
ることもできる。
Figure 5 is a circuit configuration diagram of an embodiment in which one of the heater and electrode of the gas detection element is used.It is of a gas detector type, unlike the receiver sending type as shown in Figure 3. It can also be used for receiver output types.

第5図で1は第2図で示すタイプのガス検知素
子で1d3がヒータ兼1方電極、1d2は他方電極で
間に半導体1cを介在せしめるものであり、パル
スジエネレータPG、比較器COM1,COM2、ノ
ア回路NOR、警報表示灯LED1、故障表示灯
LED2は便宜上第3図と同じ符号を使用するもの
とする。まずパルスジエネレータPGよりダイオ
ードDをへてガス検知素子1のヒータ兼一方電極
1d3をへて抵抗R21より電源E1の+側端子に接続
され抵抗R21の素子1側の接続点は抵抗R23をへ
てトランジスタQ6のベースに与えられる。又パ
ルスジエネレータPGよりダイオードDをへてト
ランジスタQ5のエミツタに、更にダイオードD
をへて抵抗R18,R19をへて接地され、抵抗R18
R19の接続点はトランジスタQ5のベースに接続さ
れ、トランジスタQ5のコレクタは抵抗R20をへて
接地されるとともにノア回路NORの1方入力端
子に接続される。
In Fig. 5, 1 is a gas detection element of the type shown in Fig. 2, 1d3 is a heater and one electrode, 1d2 is the other electrode with a semiconductor 1c interposed between them, a pulse generator PG, a comparator. COM 1 , COM 2 , NOR circuit NOR, alarm indicator LED 1 , failure indicator
For convenience, the same reference numerals as in FIG. 3 are used for LED 2 . First, from the pulse generator PG, the diode D is passed through the heater/one electrode 1d3 of the gas detection element 1, and then the resistor R21 is connected to the + side terminal of the power supply E1.The connection point of the resistor R21 on the element 1 side is It is applied to the base of transistor Q6 through resistor R23 . Also, a diode D is passed from the pulse generator PG to the emitter of the transistor Q5 , and then a diode D is connected to the emitter of the transistor Q5.
is grounded through resistors R 18 and R 19 , and is connected to resistor R 18 and
The connection point of R19 is connected to the base of transistor Q5 , and the collector of transistor Q5 is grounded through resistor R20 and connected to one input terminal of NOR circuit NOR.

ガス検知素子1の他方電極1d2は、抵抗R22
へて接地されるとともに比較器COM1の+入力端
子、比較器COM2の−入力に接続される。トラン
ジスタQ6のコレクタは抵抗R24をへて接地される
とともにノア回路NORの他方端子に接続される。
ノア回路NORの出力は抵抗R30をへて比較器
COM2の+側入力端子に与えられ、電源E1の電圧
が直列抵抗R25,R26の両端に与えられ、抵抗R25
とR26の接続部は比較器COM1の−側入力端子に
接続される。比較器COM1の出力は抵抗R27,R28
をへて接地され、抵抗R27とR28の接続部はトラ
ンジスタ又はSCRのようなゲート極付半導体Q7
のゲート極に接続され、トランジスタQ7のアノ
ードは警報表示灯LED1抵抗R29をへて電源E1
+端子に同カソードは接地される。比較器COM2
の+側入力端子は、+電源端子より抵抗R31をへ
て与えられ、比較器COM2の出力側は抵抗R32
へて故障表示灯LED2より接地に結ばれる。その
他E2はパルスジエネレータPGの電源である。又、
第6図は第5図におけるパルスジエネレータPG
に対するヒータ線兼電極1d3、トランジスタQ5
Q6、ノア回路NOR、比較器COM2、故障表示灯
LED2の応動波形線図である。尚、本実施例では、
抵抗R21とトランジスタQ6が第1の電流検出手段
を、抵抗R18,R19とトランジスタQ5とダイオー
ドDが第2の電流検出手段を、ノア回路NORが
ヒータ断線判別手段を、抵抗R22が第3の電流検
出手段を、比較器COM2と抵抗R30,R31が半導体
断線判別手段を、それぞれ構成している。次に第
5図における本案装置の実施例の動作説明を行う
と、まずガス検知素子1が正常な場合ヒータにパ
ルスジエネレータPGよりパルス電圧が印加され
ている期間には、抵抗R18には電圧降下が生じな
いためにトランジスタQ5はオフにされて抵抗R20
つまりノア回路NORの一方の入力にはL(ロー)
となるが、トランジスタQ6のベースには抵抗R21
の電圧降下により所定の電圧が与えられてオンと
なり、ノア回路NORの他方入力はHとなり、ノ
ア回路NORの出力はLであり、比較器COM2
+側入力端子には電源電圧を抵抗R31とR30で分
割した電圧が加わつており、−側入力端子に加わ
る抵抗R22の両端電圧は+側入力端子電圧より高
く設定されていて、比較器COM2は出力をとりだ
さず故障表示灯LED2を点灯しない。又パルスジ
エネレータPGがパルス出力を生じていない時、
つまりヒータに電圧が印加されていない期間には
トランジスタQ6はオフでノア回路NORの一方入
力端子にはLが加わるが、トランジスタQ5は抵
抗R18に生じる電圧降下によりオンとなりノア回
路NORの他方入力端子にはHが加わり、ノア回
路NORの出力はLで前述と同様故障表示灯LED2
は点灯しない。次にヒータ線1d3が断線した場
合、トランジスタQ5,Q6はともにオフとなり、
ノア回路NORの2入力にLが加わつて出力はH
となり、比較器COM2の出力がとりだされ故障表
示灯LED2は点灯して故障を知らせる。又、ガス
検知素子の半導体1cが断線すると抵抗R22の両
端電圧はほゞ0となり、比較器COM2の−側入力
端子は当然+側入力端子より低くなつて比較器
COM2は出力をとりだし、故障表示灯LED2を点
灯して故障を知らせる。又ガス検知素子が正常状
態にあつてガス吸着が行われると、半導体1cの
抵抗値が減じて電流が増し、抵抗R22の電圧降は
増して比較器COM1の+側入力端子に加わる電圧
が大となつて比較器COM1より出力をとりだし、
トランジスタQ7のゲート電圧をあげてこれをオ
ンとし、警報表示灯LED1を点灯することになり、
ガス検出を知らせることができる。
The other electrode 1d 2 of the gas detection element 1 is grounded through a resistor R 22 and connected to the + input terminal of the comparator COM 1 and the - input of the comparator COM 2 . The collector of the transistor Q6 is grounded through a resistor R24 and connected to the other terminal of the NOR circuit NOR.
The output of the NOR circuit passes through the resistor R 30 to the comparator.
It is applied to the + side input terminal of COM 2 , and the voltage of power supply E 1 is applied to both ends of series resistors R 25 and R 26 .
The connection between R26 and R26 is connected to the negative input terminal of comparator COM1 . The output of comparator COM 1 is connected to resistors R 27 and R 28
The connection between resistors R 27 and R 28 is connected to a gate-polarized semiconductor Q 7 such as a transistor or SCR.
The anode of the transistor Q 7 is connected to the + terminal of the power supply E 1 via the alarm indicator LED 1 resistor R 29 and its cathode is grounded. Comparator COM 2
The + side input terminal of the comparator COM 2 is connected to the + power supply terminal through a resistor R 31 , and the output side of the comparator COM 2 is connected to ground through a resistor R 32 and a failure indicator LED 2 . Others E2 is the power supply for the pulse generator PG. or,
Figure 6 shows the pulse generator PG in Figure 5.
heater wire/electrode 1d 3 for transistor Q 5 ,
Q 6 , NOR circuit NOR, comparator COM 2 , fault indicator light
3 is a response waveform diagram of LED 2. FIG. In addition, in this example,
The resistor R 21 and the transistor Q 6 serve as the first current detection means, the resistors R 18 and R 19 , the transistor Q 5 and the diode D serve as the second current detection means, the NOR circuit NOR serves as the heater burnout determination means, and the resistor R 22 constitutes third current detection means, and comparator COM 2 and resistors R 30 and R 31 constitute semiconductor disconnection determination means, respectively. Next, we will explain the operation of the embodiment of the present device shown in FIG . Transistor Q 5 is turned off so that there is no voltage drop and resistor R 20
In other words, one input of the NOR circuit NOR is L (low).
However, there is a resistor R 21 at the base of transistor Q 6 .
A predetermined voltage is applied due to the voltage drop of , which turns it on, the other input of the NOR circuit NOR becomes H, the output of the NOR circuit NOR becomes L, and the power supply voltage is connected to the + side input terminal of the comparator COM 2 through the resistor R. The voltage divided by R 31 and R 30 is applied, and the voltage across the resistor R 22 applied to the negative input terminal is set higher than the voltage of the positive input terminal, so comparator COM 2 does not output and fails. Indicator light LED 2 does not light up. Also, when the pulse generator PG is not producing pulse output,
In other words, during the period when no voltage is applied to the heater, the transistor Q6 is off and L is applied to one input terminal of the NOR circuit NOR, but the transistor Q5 is turned on due to the voltage drop that occurs in the resistor R18 , and the NOR circuit NOR is turned on. H is added to the other input terminal, and the output of the NOR circuit is L, indicating the failure indicator LED 2 as described above.
does not light up. Next, when the heater wire 1d 3 is disconnected, both transistors Q 5 and Q 6 are turned off,
L is added to the two inputs of the NOR circuit, and the output is H.
Then, the output of comparator COM 2 is taken out and the failure indicator LED 2 lights up to notify the failure. Furthermore, when the semiconductor 1c of the gas detection element is disconnected, the voltage across the resistor R 22 becomes almost 0, and the negative input terminal of the comparator COM 2 naturally becomes lower than the positive input terminal.
COM 2 takes out the output and lights up the failure indicator LED 2 to notify the failure. Furthermore, when the gas detection element is in a normal state and gas adsorption is performed, the resistance value of the semiconductor 1c decreases, the current increases, the voltage drop across the resistor R22 increases, and the voltage applied to the + side input terminal of the comparator COM1 increases. becomes large and output is taken from comparator COM 1 ,
Increase the gate voltage of transistor Q 7 to turn it on and turn on the alarm indicator LED 1 .
Gas detection can be notified.

以上のようにこの発明によれば、ガス検知素子
のヒータ線に電圧を印加している期間においても
印加していない期間においても、ガス検知素子の
ヒータ並びに半導体の断線を確実に検出して故障
の表示警報を行うことができる。
As described above, according to the present invention, disconnection of the heater and semiconductor of the gas detection element can be reliably detected and failure can occur, both during the period when voltage is applied to the heater wire of the gas detection element and during the period when the voltage is not applied. can display alarms.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図と第2図は、本発明に用いるガス検知素
子の1実施例斜面図と他の実施例略線図、第3
図、第5図は本発明の異る実施例の回路構成図、
第4図、第6図は同第3図、第5図の該当部のパ
ルスジエネレータに対する応動波形線図である。 図で1はガス検知素子、1a,1d3はヒータ線
1cは半導体、COM1,COM2は比較器、PGは
パルスジエネレータ、Q1〜Q7はトランジスタ、
R1〜R32は抵抗、LED1,LED2は表示灯、INVは
インバータ、NORはノア回路、Dはダイオード、
E1は電源、E2はパルスジエネレータ用電源。
1 and 2 are a perspective view of one embodiment of the gas detection element used in the present invention, a schematic diagram of another embodiment, and a third embodiment of the gas detection element used in the present invention.
5 is a circuit configuration diagram of a different embodiment of the present invention,
FIGS. 4 and 6 are response waveform diagrams for the pulse generator in the corresponding portions of FIGS. 3 and 5. In the figure, 1 is a gas detection element, 1a and 1d3 are heater wires 1c are semiconductors, COM1 and COM2 are comparators, PG is a pulse generator, Q1 to Q7 are transistors,
R 1 to R 32 are resistors, LED 1 and LED 2 are indicator lights, INV is an inverter, NOR is a NOR circuit, D is a diode,
E 1 is the power supply, E 2 is the power supply for the pulse generator.

Claims (1)

【特許請求の範囲】 1 パルス電源によりヒータ線の加熱期間と加熱
停止期間を設け、前記加熱停止期間のヒータ線を
加熱しない低温状態でガスを吸着せしめることに
より、金属酸化物半導体の導電度又は抵抗値の変
化を利用してガス漏れ検出を行い、前記加熱期間
のヒータ線の加熱により前記ガス素子より脱着す
るタイプのガス検知素子を警報装置と組合せてガ
ス漏れ警報を行うガス漏れ検知装置において、 前記ヒータ線を通じて流れる加熱用電流を検出
する第1の電流検出手段と、 前記パルス電源による加熱停止期間に、前記ヒ
ータ線に断線検出用の電流を供給するとともに、
該供給電流を検出する第2の電流検出手段と、 前記第1の電流検出手段と第2の電流検出手段
とのいずれもが電流を検出しなくなつた時に前記
ヒータ線の断線を判別して断線信号を出力するヒ
ータ断線判別手段と、 前記金属酸化物半導体を通じて流れる電流を検
出する第3の電流検出手段と、 前記第3の電流検出手段によつて検出される電
流が所定値以下に低下した時に、前記金属酸化物
半導体の断線あるいは接触不良を判別して断線信
号を出力する半導体断線判別手段と、 を設けてなることを特徴とするガス漏れ検知装
置。 2 第1の電流検出手段は、ヒータ線に流れる電
流を検出する検出用抵抗と、前記検出用抵抗に生
じる加熱用電流による電圧降下によりオンする第
1のトランジスタとを有し、第2の電流検出手段
は、パルス電源の加熱停止期間の出力に応答して
前記ヒータ線に断線検出用電流を供給する供給用
抵抗と、前記供給用抵抗に生じる電圧降下により
オンする第2のトランジスタとを有し、前記第1
と第2のトランジスタの出力がヒータ断線判別手
段に接続されてなることを特徴とする特許請求の
範囲第1項記載のガス漏れ検知装置。 3 ヒータ断線判別手段は、第1のトランジスタ
の出力が接続されるインバータと、前記インバー
タの出力と第2のトランジスタ出力とが接続され
るノア回路とを有することを特徴とする特許請求
の範囲第1項記載のガス漏れ検知装置。
[Claims] 1. By providing a heating period and a heating stop period for the heater wire using a pulse power supply, and adsorbing gas in a low temperature state without heating the heater wire during the heating stop period, the conductivity or In a gas leak detection device that detects a gas leak by using a change in resistance value and issues a gas leak alarm by combining a gas detection element of a type that is detached from the gas element by heating a heater wire during the heating period with an alarm device. , a first current detection means for detecting a heating current flowing through the heater wire; and supplying a current for detecting disconnection to the heater wire during a heating stop period by the pulsed power supply;
a second current detecting means for detecting the supplied current; and determining a break in the heater wire when both the first current detecting means and the second current detecting means no longer detect the current; heater disconnection determination means that outputs a disconnection signal; third current detection means that detects a current flowing through the metal oxide semiconductor; and when the current detected by the third current detection means decreases below a predetermined value. A gas leak detection device comprising: semiconductor disconnection determination means for determining whether the metal oxide semiconductor is disconnected or has poor contact and outputs a disconnection signal when the metal oxide semiconductor is disconnected. 2 The first current detection means includes a detection resistor that detects the current flowing in the heater wire, and a first transistor that is turned on by a voltage drop due to the heating current generated in the detection resistor, and The detection means includes a supply resistor that supplies a disconnection detection current to the heater wire in response to the output of the pulse power supply during the heating stop period, and a second transistor that is turned on by a voltage drop occurring in the supply resistor. and the first
2. The gas leak detection device according to claim 1, wherein the outputs of the second transistor and the second transistor are connected to heater disconnection determining means. 3. The heater disconnection determining means includes an inverter to which the output of the first transistor is connected, and a NOR circuit to which the output of the inverter and the output of the second transistor are connected. Gas leak detection device according to item 1.
JP58178215A 1983-09-28 1983-09-28 Gas leak detecting apparatus Granted JPS6070345A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58178215A JPS6070345A (en) 1983-09-28 1983-09-28 Gas leak detecting apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58178215A JPS6070345A (en) 1983-09-28 1983-09-28 Gas leak detecting apparatus

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2246789A Division JPH03150456A (en) 1990-09-17 1990-09-17 Gas leak detecting device

Publications (2)

Publication Number Publication Date
JPS6070345A JPS6070345A (en) 1985-04-22
JPH0333225B2 true JPH0333225B2 (en) 1991-05-16

Family

ID=16044592

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58178215A Granted JPS6070345A (en) 1983-09-28 1983-09-28 Gas leak detecting apparatus

Country Status (1)

Country Link
JP (1) JPS6070345A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6189155U (en) * 1984-11-16 1986-06-10
JPS61126458A (en) * 1984-11-22 1986-06-13 Mitsubishi Electric Corp Detector

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58178214A (en) * 1982-04-12 1983-10-19 Mitsubishi Electric Corp Running data display device

Also Published As

Publication number Publication date
JPS6070345A (en) 1985-04-22

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