JPH033377A - Semiconductor laser pumped solid-state laser device - Google Patents
Semiconductor laser pumped solid-state laser deviceInfo
- Publication number
- JPH033377A JPH033377A JP1136081A JP13608189A JPH033377A JP H033377 A JPH033377 A JP H033377A JP 1136081 A JP1136081 A JP 1136081A JP 13608189 A JP13608189 A JP 13608189A JP H033377 A JPH033377 A JP H033377A
- Authority
- JP
- Japan
- Prior art keywords
- laser
- semiconductor laser
- state laser
- solid
- pumped solid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
- H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
- H01S3/09415—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode the pumping beam being parallel to the lasing mode of the pumped medium, e.g. end-pumping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/08—Construction or shape of optical resonators or components thereof
- H01S3/08086—Multiple-wavelength emission
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Optics & Photonics (AREA)
- Lasers (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、光ディスクの記録再生や、レーザカラープリ
ンタ、プロジェクションＴＶに用いられる半導体レーザ
励起固体レーザ装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a semiconductor laser-excited solid-state laser device used for recording and reproducing optical discs, laser color printers, and projection TVs.
（従来の技術）
半導体レーザは、スペクトル幅が狭く高効率で、Ｎｄ：
ＹＡＧレーザ等の固体レーザの吸収スペクトルに波長を
合わせると、効率のよい励起光源となる。そのため、従
来のランプに代わる固体レーザ励起光源として、注目を
集めるようになってきた。また、Ｎｄ：ＹＡＧレーザ光
の高調波は、可視光レーザ光として、従来からよく知ら
れている。(Prior art) Semiconductor lasers have a narrow spectrum width, high efficiency, and Nd:
When the wavelength is matched to the absorption spectrum of a solid-state laser such as a YAG laser, it becomes an efficient excitation light source. Therefore, solid-state laser excitation light sources have been attracting attention as an alternative to conventional lamps. Further, harmonics of Nd:YAG laser light are conventionally well known as visible laser light.
近年、この両者を組み合わせた半導体レーザ励起によっ
て第２高調波を発生する半導体レーザ励起固体レーザ装
置が多く試みられている。In recent years, many attempts have been made to develop semiconductor laser-excited solid-state laser devices that generate second harmonics through semiconductor laser excitation that combines the two.
（発明が解決しようとする課題）
Ｎｄ：ＹＡＧレーザの発振波長は、よく知られているｔ
、ｏｓ＝（４Ｆ’３７２ ’ Ｉ ｔｚ／ｚ）の他に
、０．９４゜（’ Ｆ３１２ ’ Ｉ ！／２）や、
１．３Ｊｌｌｌ（’ Ｆｓｔ＊ ’ Ｉ ｚｚｚ２
＞でも発振する。また、発振波長１，３．、１．０６−
および０．９４−それぞれの第２高調波は、０．６５Ｊ
７１１．０．５３戸および０．４７−で、これらは、そ
れぞれ、赤色。(Problem to be solved by the invention) The oscillation wavelength of the Nd:YAG laser is the well-known t
, os = (4F'372' I tz/z), as well as 0.94° ('F312' I!/2),
1.3Jlll('Fst*' I zzz2
>But it oscillates. Moreover, the oscillation wavelengths 1, 3. , 1.06-
and 0.94 - each second harmonic is 0.65J
711.0.53 houses and 0.47-, which are red respectively.
緑色および青色に相当する波長である。これらの各波長
で発振させる場合、共振器を構成するミラーの反射率を
各波長に合わせなければならず、１つのＮｄ：ＹＡＧレ
ーザ装置で各波長を同時に出力することは、難しいとい
う問題があった。This is the wavelength corresponding to green and blue. When oscillating at each of these wavelengths, the reflectance of the mirrors that make up the resonator must be matched to each wavelength, and there is a problem that it is difficult to output each wavelength simultaneously with one Nd:YAG laser device. Ta.
従って、赤色、緑色および青色を合成した白色レーザ光
が得られないという問題もあった。また、従来、白色レ
ーザ光を得るＨｅ−Ｃｄレーザがあるが、装置が大形で
、取扱いが難しいという問題があった。Therefore, there was also a problem that white laser light, which is a combination of red, green, and blue, could not be obtained. Furthermore, although there has been a He-Cd laser that produces white laser light, there has been a problem that the device is large and difficult to handle.
本発明は上記の問題を解決するもので、上記の３波長を
同時に発振し、白色レーザ光が得られる小形で取扱いの
簡単な半導体レーザ励起固体レーザ装置を提供するもの
である。The present invention solves the above problems and provides a small, easy-to-handle semiconductor laser pumped solid-state laser device that simultaneously oscillates the three wavelengths mentioned above and obtains white laser light.
（課題を解決するための手段）
上記の課題を解決するため、本発明は、共振器を構成す
る反射鏡の反射率を１．３７ｍ＋、 １．０６４および
０．９４．では高反射率になり、これらの高調波では低
反射率にして取出し効率をよくするものである。(Means for Solving the Problems) In order to solve the above problems, the present invention sets the reflectances of the reflecting mirrors constituting the resonator to 1.37m+, 1.064, and 0.94. For these harmonics, the reflectance is high, and for these harmonics, the reflectance is low to improve the extraction efficiency.
（作 用）
上記の構成により、Ｎｄ：ＹＡＧレーザは、赤色、緑色
および青色の３波長で同時に発振するので、白色レーザ
光を得ることができる。(Function) With the above configuration, the Nd:YAG laser simultaneously oscillates at three wavelengths of red, green, and blue, so that white laser light can be obtained.
（実施例）
本発明の一実施例について、第１図ないし第３図により
説明する。第１図および第２図は、本発明による半導体
レーザ励起固体レーザ装置の構成を示す斜視図および側
面図である。(Example) An example of the present invention will be described with reference to FIGS. 1 to 3. 1 and 2 are a perspective view and a side view showing the configuration of a semiconductor laser pumped solid-state laser device according to the present invention.
同図において、本発明による半導体レーザ励起固体レー
ザ装置は、後端面が内部反射鏡として働く、長さが１０
ｍ、直径が１１のＮｄ：ＹＡＧロッド１の前面に、高調
波を発生させる非線形光学結晶として５ｍ＋＋角のＫＴ
Ｐ結晶２および内側が凹面の外部反射鏡３を順次配置し
た固体レーザと、上記のＮｄ：ＹＡＧロッド１の後端面
に集束するように集光レンズ４を配置した、発振波長０
．８０９．。In the same figure, the semiconductor laser pumped solid-state laser device according to the present invention has a length of 10 mm, the rear end surface of which functions as an internal reflecting mirror.
In front of the Nd:YAG rod 1 with a diameter of 11 m and a diameter of 11 m, a KT of 5 m++ angle is placed as a nonlinear optical crystal for generating harmonics.
A solid-state laser in which a P crystal 2 and an external reflecting mirror 3 with a concave inner surface are sequentially arranged, and a condensing lens 4 arranged so as to focus on the rear end face of the Nd:YAG rod 1 described above, have an oscillation wavelength of 0.
．． 809. .
出力３００ａ＋ｗの半導体レーザ５とから構成されてい
る。なお、上記のＮｄ：ＹＡＧロッド１の内部反射鏡は
平面、また、上記の外部反射鏡３は曲率半径１００ｍの
凹面で、両鏡面で形成される共振器長は５５０ａｓであ
る。さらに、Ｎｄ：ＹＡＧロッド１のＫＴＰ結晶２側の
端面とＫＴＰ結晶２の両端面は、波長１，３４ 、１．
０６ＪＪｌ 、 ０．９４１！ｍ、 ０．６５ｇ 、
０．５３４ 。It is composed of a semiconductor laser 5 with an output of 300a+w. The internal reflecting mirror of the Nd:YAG rod 1 is a flat surface, and the external reflecting mirror 3 is a concave surface with a radius of curvature of 100 m, and the length of the resonator formed by both mirror surfaces is 550 as. Further, the end face of the Nd:YAG rod 1 on the KTP crystal 2 side and both end faces of the KTP crystal 2 have wavelengths of 1, 34, 1.
06JJl, 0.941! m, 0.65g,
0.534.
０．４７−の各波長で低反射率になるように、また、Ｎ
ｄ：ＹＡＧロッド１の励起側端面の内部反射鏡は、波長
０．８１−で無反射に、波長１．３戸、 １．０６戸。In order to have a low reflectance at each wavelength of 0.47-
d: The internal reflection mirror on the excitation side end face of the YAG rod 1 has no reflection at a wavelength of 0.81-, and wavelengths of 1.3 and 1.06.
０．９４４．０，６５．ｎ、 ０．５３−および０．４
７−で高反射率になるように、さらに、外部反射鏡３は
波長１．３戸、 １．０６戸および０．９４−で高反射
率に、波長０．６５４．０，５３７ｚｓおよび０．４７
−で低反射率になるように、それぞれコーティングを施
した。0.944.0,65. n, 0.53- and 0.4
Further, the external reflector 3 has a high reflectance at wavelengths of 1.3, 1.06 and 0.94, and a high reflectance at wavelengths of 0.654.0,537zs and 0.7. 47
A coating was applied to each to give a low reflectance at -.
第３図は、分光分析装置の斜視図で１本発明の半導体レ
ーザ励起固体レーザ装置６の出射光は、コリメートレン
ズ７およびプリズム８により分光され、スクリーン９上
に赤色（０，６５，）、緑色（０，５３戸）、青色（０
，４７ＪＭ）のスポットがきれいに映しだされた。各波
長の出力は、はぼ一定で〜１ｍＶである。FIG. 3 is a perspective view of a spectroscopic analyzer. 1. The emitted light from the semiconductor laser pumped solid-state laser device 6 of the present invention is separated by a collimating lens 7 and a prism 8, and appears on a screen 9 in red (0, 65,), Green (0,53 houses), blue (0
, 47JM) spots were clearly displayed. The output at each wavelength is approximately constant ~1 mV.
（発明の効果） 以上説明したように、本発明によれば、赤色。(Effect of the invention) As explained above, according to the present invention, red color.
緑色、青色の３波長を同時に発振し、白色レーザ光を得
ることができる。また、半導体レーザで励起しているた
め、消費電力の少ない、取扱いが容易な小形の半導体レ
ーザ励起固体レーザ装置が得られる。White laser light can be obtained by simultaneously emitting green and blue wavelengths. Furthermore, since the laser is excited by a semiconductor laser, a compact semiconductor laser-excited solid-state laser device that consumes less power and is easy to handle can be obtained.
第１図および第２図は本発明による半導体レーザ励起固
体レーザ装置の構成を示す斜視図および側面図、第３図
は半導体レーザ励起固体レーザ装置の分光分析装置の斜
視図である。
１ ・・・Ｎｄ：ＹＡＧロッド、 ２ ・・・ＫＴＰ結
晶、 ３・・・外部反射鏡、 ４ ・・・集光レンズ、
５ ・・・半導体レーザ、 ６半導体レーザ励起固体
レーザ装置、 ７・・・コリメートレンズ、 ８ ・・
・プリズム。
９ ・・・ スクリーン。1 and 2 are a perspective view and a side view showing the configuration of a semiconductor laser pumped solid-state laser device according to the present invention, and FIG. 3 is a perspective view of a spectroscopic analysis device for a semiconductor laser pumped solid-state laser device. 1...Nd:YAG rod, 2...KTP crystal, 3...external reflector, 4...condensing lens,
5... Semiconductor laser, 6 Semiconductor laser excitation solid-state laser device, 7... Collimator lens, 8...
·prism. 9...Screen.
Claims (1)
あいだに配置した固体レーザ結晶および非線形光学結晶
と、上記の固体レーザ結晶を励起する半導体レーザとで
構成し、上記の固体レーザ結晶を複数の波長でレーザ発
振させることを特徴とする半導体レーザ励起固体レーザ
装置。The solid-state laser crystal is composed of a solid-state laser crystal and a nonlinear optical crystal placed between reflectors whose reflectance is set to oscillate at multiple wavelengths, and a semiconductor laser that excites the solid-state laser crystal. A semiconductor laser pumped solid-state laser device characterized by laser oscillation at multiple wavelengths.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1136081A JPH033377A (en) | 1989-05-31 | 1989-05-31 | Semiconductor laser pumped solid-state laser device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1136081A JPH033377A (en) | 1989-05-31 | 1989-05-31 | Semiconductor laser pumped solid-state laser device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH033377A true JPH033377A (en) | 1991-01-09 |
Family
ID=15166801
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1136081A Pending JPH033377A (en) | 1989-05-31 | 1989-05-31 | Semiconductor laser pumped solid-state laser device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH033377A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006314641A (en) * | 2005-05-13 | 2006-11-24 | Okumura Yu-Ki Co Ltd | Game machine |
| US7177069B2 (en) | 1999-12-30 | 2007-02-13 | Osram Opto Semiconductors Gmbh | White light source based on nonlinear-optical processes |
| JP2011031082A (en) * | 2010-11-17 | 2011-02-17 | Okumura Yu-Ki Co Ltd | Game machine |
| CN107516806A (en) * | 2016-06-16 | 2017-12-26 | 中国科学院物理研究所 | Device for generating supercontinuum white light laser and method for manufacturing nonlinear laser crystal |
-
1989
- 1989-05-31 JP JP1136081A patent/JPH033377A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7177069B2 (en) | 1999-12-30 | 2007-02-13 | Osram Opto Semiconductors Gmbh | White light source based on nonlinear-optical processes |
| JP2006314641A (en) * | 2005-05-13 | 2006-11-24 | Okumura Yu-Ki Co Ltd | Game machine |
| JP2011031082A (en) * | 2010-11-17 | 2011-02-17 | Okumura Yu-Ki Co Ltd | Game machine |
| CN107516806A (en) * | 2016-06-16 | 2017-12-26 | 中国科学院物理研究所 | Device for generating supercontinuum white light laser and method for manufacturing nonlinear laser crystal |
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