JPH0334235U - - Google Patents
Info
- Publication number
- JPH0334235U JPH0334235U JP9583989U JP9583989U JPH0334235U JP H0334235 U JPH0334235 U JP H0334235U JP 9583989 U JP9583989 U JP 9583989U JP 9583989 U JP9583989 U JP 9583989U JP H0334235 U JPH0334235 U JP H0334235U
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor layer
- semiconductor
- layer
- semiconductor material
- band gap
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 claims 13
- 239000000463 material Substances 0.000 claims 4
- 230000005669 field effect Effects 0.000 claims 1
- 230000005533 two-dimensional electron gas Effects 0.000 claims 1
- 238000000605 extraction Methods 0.000 description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
Landscapes
- Bipolar Integrated Circuits (AREA)
- Junction Field-Effect Transistors (AREA)
Description
第１図は、本考案の一実施例を示す断面図であ
る。
１……サブストレート、２……ｎ＋−ＡｌＧａ
Ａｓ層、３……アンドープＡｌＧａＡｓ層、４…
…アンドープＧａＡｓ層、５……ｐ＋−ＧａＡｓ
層、６……ｎ−ＡｌｘＧａ１−ｘＡｓ層、７……
コレクタ電極、７ａ……コレクタ取り出し領域、
８……ベース電極、９……エミツタ電極、１０…
…ドレイン電極、１０ａ……ドレイン取り出し領
域、１１……ゲート電極、１２……ソース電極、
１２ａ……ソース取り出し領域、１３……ドレイ
ン電極、１３ａ……ドレイン取り出し領域、１４
……ゲート電極、１５……ソース電極、１５ａ…
…ソース取り出し領域、１６……空乏層、１７…
…絶縁層。
FIG. 1 is a sectional view showing an embodiment of the present invention. 1...Substrate, 2...n + -AlGa
As layer, 3... Undoped AlGaAs layer, 4...
...Undoped GaAs layer, 5...p + -GaAs
layer, 6... n-Al x Ga 1-x As layer, 7...
Collector electrode, 7a... Collector extraction area,
8... Base electrode, 9... Emitter electrode, 10...
...Drain electrode, 10a...Drain extraction region, 11...Gate electrode, 12...Source electrode,
12a... Source extraction region, 13... Drain electrode, 13a... Drain extraction region, 14
...Gate electrode, 15...Source electrode, 15a...
...Source extraction region, 16... Depletion layer, 17...
...Insulating layer.
Claims (1)
層と該第１の半導体層上に形成された狭禁制帯幅
の半導体材料からなるアンドープの第２の半導体
層とによつてコレクタ層が構成され前記第２の半
導体層上に形成された狭禁制帯幅の半導体材料か
らなる第３の半導体層をベース領域とし該第３の
半導体層上に形成された広禁制帯幅の半導体材料
からなる第４の半導体層をエミツタ領域とするバ
イポーラトランジスタと、前記第１の半導体層と
前記第２の半導体層とのヘテロ接合界面に生じる
２次元電子ガス層をチヤネルとする電界効果トラ
ンジスタとが同一基板上に形成されている集積回
路装置。 A collector layer is constituted by a first semiconductor layer made of a semiconductor material with a wide band gap and an undoped second semiconductor layer made of a semiconductor material with a narrow band gap formed on the first semiconductor layer. a third semiconductor layer made of a narrow bandgap semiconductor material formed on the second semiconductor layer as a base region, and made of a wide bandgap semiconductor material formed on the third semiconductor layer; A bipolar transistor whose emitter region is a fourth semiconductor layer and a field effect transistor whose channel is a two-dimensional electron gas layer generated at the heterojunction interface between the first semiconductor layer and the second semiconductor layer are provided on the same substrate. an integrated circuit device formed thereon;
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9583989U JPH0334235U (en) | 1989-08-12 | 1989-08-12 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9583989U JPH0334235U (en) | 1989-08-12 | 1989-08-12 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0334235U true JPH0334235U (en) | 1991-04-04 |
Family
ID=31645082
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9583989U Pending JPH0334235U (en) | 1989-08-12 | 1989-08-12 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0334235U (en) |
-
1989
- 1989-08-12 JP JP9583989U patent/JPH0334235U/ja active Pending
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