JPH0334452A - A circuit board having a resistor provided on non-oxide ceramics, an electronic device incorporating the same circuit board, and a manufacturing method thereof - Google Patents

Abstract

PURPOSE:To adjust a resistance value only with adjustment of laser output by a method wherein a resistor provided on non-oxide ceramic is removed for adjusting the resistance value and leak current on the exposed non-oxide ceramic part is made primarily proportional to applied voltage. CONSTITUTION:A circuit board 10 is equipped with a metallic layer region 101 for mounting power elements and a wiring metallic layer region 111 for forming a power element control circuit on an aluminum nitride sintered body board 100 while a resistor 113A is provided on a desired part of the wiring metallic layer 111. An overcoat glass is provided at required parts over the wiring metallic layer region 111 and the resistor 113A. In addition, a metallic layer 121 is provided on an approximately entire surface where the aluminum nitride board 100 elements are not mounted. As for the resistor 113A laser radiation is performed via the overcoat glass with YAG, output of 1.0W, in the air, Q switch frequency of 3kHz, scan speed 10mm/sec and beam diameter of 50mum, resulting in the resistance value adjusted within + or -0.3% range of a target value.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a circuit board having a resistor provided on a non-oxide ceramic, an electronic device incorporating the circuit board, and a manufacturing method thereof.

[Conventional technology]

BACKGROUND OF THE INVENTION Non-oxide ceramics, such as aluminum nitride and silicon carbide, have been given remarkable and favorable physical properties as substrate materials for electronic components, as sintering technology and refining technology have improved in recent years. IEEE Trans
, on C, Il, T, , CIIT-8, Na 2.
“AlN5u” on pages 247-252 (1985)
bstrates with High Therma
l Conductivity”I I I I Transactions Oncy, H, M, T3.
In the paper entitled Substrate with High Thermal Conductivity, high-density, highly purified aluminum nitride powder was pressure-sintered and the thermal conductivity was 160 W/m・K.
(room temperature), electrical resistivity 5 x 1013Ω・(room temperature), J
Electricity rate 8.9 (IMHz), bending strength 50kg/mz
, thermal expansion coefficient 4.3 x 10''''6/℃ (room temperature -4
00°C). Moreover, in Japanese Patent Publication No. 58-15953, a pressurized sintered body of silicon carbide attached with Beryliya has a thermal conductivity of 0.25 cal.
The present invention discloses a substrate for an electrical device having the following properties: /mm-s · 'CC or higher, low resistivity of 107Ω or higher (at room temperature), and thermal expansion coefficient of 4×10''/°C or lower.

From the prior art examples described above, non-oxide ceramic sintered bodies such as aluminum nitride and silicon carbide are expected to contribute to improving the performance of electronic devices by taking advantage of their various characteristics. Hybrid ICs are one of the promising fields of application of non-oxide ceramics, and the development of thick film compositions necessary for forming such circuits is progressing. First, it is essential that a resistor is formed on a hybrid IC substrate together with conductor wiring because of the structure of one circuit. For example, JP-A No. 62-216301 discloses a resistance composition comprising a conductive powder, an inorganic binder, an organic vehicle, and optionally a metal oxide additive, in which the inorganic binder is a crystalline glass frit. a certain composition,
JP-A-63-136601 discloses a thick film resistor in which a porous resistive film is provided on an aluminum nitride substrate. Proc.

5th International Micro
electronics conference, pp.
"Techn" in l 37-14↓ (1988)
ical progresses for a thi
ck film resistor for alu
min n1tride substrate
with devitrificable 5 old
r glass” Process 5th International Microelectronics Conference, PP
, 137-↓41 In a paper entitled Technical Progress for Asic Film Resistance for Aluminum Nitride Substrates with Debbie 1-Refire Pull Soider Glass, SiS102 (10-16%) 820
3 (1926wt%) ZnO (60-70wt%
) type glass as a glass frit and discloses a Ru○2 type thick film resistor for aluminum nitride. Through the development of these materials, desired resistors have been obtained.

Second, laser trimming is essential in order to adjust the resistance value of the resistor at high speed and with high precision.

However, as described in JP-A-62-136897, when aluminum nitride is irradiated with a YAG laser of 12 W/pulse, a decrease in resistance due to the precipitation of metal AQ is observed. As described in Japanese Patent No. 24557, it is possible to reduce the resistance of silicon carbide ceramics by laser irradiation. I have been. These phenomena are undesirable because they make trimming for the purpose of highly accurate control of the resistance value difficult. To achieve the purpose of trimming, laser irradiation (a
(a) A predetermined portion of the resistor must be completely cut, and (b) the ceramic substrate of the irradiation part must not deteriorate in electrical insulation. As a solution to this point, Japanese Patent Laid-Open No. 63
In Japanese Patent No. 131501, when trimming a thick film resistor on an aluminum nitride film 15, 600
A circuit board whose exposed aluminum nitride surface has been aluminized by blowing hot air at ~1000°C is displayed, and
In Japanese Patent Application Laid-Open No. 61-295287.

When trimming a resistor on silicon carbide, a method has been disclosed in which oxidizing gas (oxygen) is sprayed to increase the resistance value and non-oxidizing gas (nitrogen) is sprayed to decrease the resistance value simultaneously with laser irradiation. There is.

[Problem to be solved by the invention]

The prior art disclosed in Japanese Unexamined Patent Publication No. 63-131501 and Japanese Unexamined Patent Publication No. 61-295287 are excellent techniques in terms of resistance value adjustment. However, in these prior art,
(1) It is essential to spray some kind of gas at the same time as laser irradiation, and special trimming equipment with a mechanism for this is required. Furthermore, (II) from the point of view of work efficiency, it is desirable to be able to share equipment with conventional trimming of resistors on alumina substrates, but this is difficult with the above-mentioned prior art, which requires special trimming equipment. This background is a major reason why thick film circuit products are not put into practical use, despite the emergence of superior non-oxide ceramics and resistor materials.

Therefore, the present invention compensates for the above-mentioned drawbacks of the conventional technology, and
This circuit board has a resistor mounted on non-oxide ceramics and can be used in common with conventional trimming equipment for resistors on an alumina substrate without requiring trimming equipment equipped with a special mechanism. The purpose is to present embedded electronic devices and their manufacturing methods.

Another object of the present invention is to provide a circuit board having a resistor that facilitates resistance value adjustment and exhibits good resistance value stability, an electronic device incorporating the same circuit board, and a manufacturing method thereof. (It is to be.

[Means to solve the problem]

In order to overcome the above problems, the present invention takes the following measures.

A circuit board having a resistor provided on a non-oxide ceramic according to the present invention includes a resistor provided on a non-oxide ceramic and having a portion removed for resistance value adjustment;
The non-oxide ceramic portion is exposed by removing the resistor, and the leakage current of the exposed portion is basically proportional to the applied voltage.

An electronic device incorporating the circuit board of the present invention includes a resistor provided on a non-oxide ceramic and having a portion removed for resistance adjustment, and a resistor having a portion of the non-oxide ceramic exposed by removing the resistor. The circuit has a ceramic portion, and the leakage current of the exposed portion is linearly proportional to the applied voltage! ! The basic idea is that the board is incorporated into a circuit that switches, amplifies, or converts electrical signals.

The method of manufacturing a circuit board having a resistor provided on a non-oxide ceramic and an electronic device incorporating the same circuit board of the present invention is to irradiate a resistor provided on a non-oxide ceramic with a laser to resist the resistance. When adjusting the value, make sure that the incident laser irradiation energy on the surface of the irradiated object is 410 W/+um'' or more and 920 W/llNl2 or less, or the substantial energy of the laser beam that reaches the surface of the non-oxide ceramic is 510 W/1lfl2 or less. Basically, it is adjusted.

[Effect]

As a result of various studies, the inventors discovered the following experimental facts.

(1) The part irradiated with laser for resistance value adjustment has a non-oxide ceramic part exposed by removing the resistor. At this time, if the current-voltage characteristics of the exposed part follow Ohm's law, no electrical deterioration will occur in that part, but if the current-voltage characteristics of the exposed part do not follow Ohm's law,
It was found that electrical insulation gradually deteriorated. This mechanism is currently unknown. However, from a practical point of view, it is desirable that the former situation be preserved.

Furthermore, it has been found that when such conditions are maintained, the resistance value of the same part increases by at most two fingers compared to the non-oxide ceramic matrix.

In the manufacturing method of the present invention, when adjusting the resistance value by irradiating the resistor provided on the non-oxide ceramic with a laser,
The incident laser beam energy on the surface of the irradiated object is 41
By selecting the above energy range, the effective energy of the laser beam reaching the non-oxide ceramic surface can be adjusted to 0 W/tan2 or more and 920 W/mm or less, or 5 L OW/1 m2 or less. This is to ensure that the current-voltage characteristics of the exposed non-oxide ceramic portion follow Ohm's law, that is, that the leakage current of the irradiated portion is linearly proportional to the applied voltage.

When non-oxide ceramics are irradiated with a laser in air or in an oxidizing atmosphere, the oxides of the metals constituting the ceramics (for example, A Q 20a, 5i0
2 etc.) is generated.

The above metal elements (AQ, Si, etc.), nonmetal oxides (NO2, CO2, etc.) constituting the ceramics, and the above nonmetal elements (Ni, C, etc.) are also produced. The above metal oxides are stable substances and do not cause a decrease in insulation properties, but
If the above-mentioned elemental metals (AQ, Si, etc.) or elemental non-metals (C, etc.) are dissolved in these, the insulation properties will be lowered. The amount of solid solution material is mainly controlled by the laser irradiation energy.

Therefore, the insulation of the irradiation section is also controlled. By selecting the energy range, preservation of proper insulation is possible.

〔Example〕

Next, the present invention will be explained in more detail with reference to Examples.

The first embodiment includes a circuit board in which a power element and a control circuit for controlling it are mounted on the same board, an electronic device to which the circuit is applied, that is, an igniter module device, and a power distribution device to which the electronic device is applied. , Furthermore, these manufacturing methods will be explained.

FIG. 1 shows a circuit board 10 on which a resistor is formed.

Metal layer for power device mounting area (silver-palladium, J-Gas 1)
3 μm) region 101 and a wiring metal layer (silver-palladium, 13 μm In) region 111 for forming a power element control circuit are formed on an aluminum nitride sintered body substrate lo.

A resistor ↓13A is provided on a desired part of the wiring metal layer 111.
(100-750Ω). In the area ↓o1 there is a transistor chip (5X5DII) as a power element.
I+, 5W, 15A) ↓o3 is pb-5wt%5n-1
, 6 pieces are mounted in parallel using 5wt%Ag solder 1o4 (not shown). Overcoat glass 113B (
(not shown) is provided, and a chip capacitor 113
c and the mini-mold transistor 113d are Pb-5w.
t%5n-1,5wt%Ag solder 114 (not shown 11
18). Metal layer regions 101 and 11
1 and between the transistor chip 103 and the metal layer region 1
Between 11 and 11 is an aluminum thin wire (diameter 350 μm) 10
5. Aluminum nitride substrate 100
A metal layer (silver-palladium, 13 μm thick) 121 is provided on almost the entire surface on which no element is mounted, and a glass layer 123 (glass 113B and homogeneous)
is provided. Metal layer region 101. ↓11, metal layer ↓21 and resistor 113A after printing thick film paste 1-8
Obtained by firing in air at 50°C, lou+in, overcoat glasses 113B and 123 were fired at 600°C, 10 m
Obtained by firing in air for 1n. The substrate 100 used was a sintered body (thickness 0.8 nm, thermal conductivity 170 W/m-, The resistivity is 1013Ω'O11 or more).

The resistor 113A is adjusted to a desired resistance value. At this time, the resistor 113A is connected to the overcoat glass 113B.
Laser irradiation (YAG, power 1.0 W, in air, Q-switch frequency 3 kHz).

scanning speed 10 mu/see, beam diameter 50 μm)
It was done.

As a result, the resistance value was adjusted to within ±0.3% of the target value.

Figures 2 (,) and (b) are examples showing the change in resistance value of resistor 113A after a temperature cycle test (1000 times) at -55 to 150°C and a high temperature storage test (↓0OOh) at 150°C. . In all tests, the resistance value was within ±0.5% of the initial value, which was stable enough for practical use. In addition, a power seven times the rated value was repeatedly applied to the resistor 113A by intermittent energization, but even after 90,000 intermittent energizations, the resistance value changed within ±0.5% and no practical problems were found. . Furthermore, Fig. 3 (C) shows the temperature at 80°C, 9
Resistor 1 by high temperature and high humidity test (1000h) at 0%RH
This is an example showing the resistance value transition of 13A. In this test, the resistance value remained within ±0.5% even after the test, and no practical problems were found. The reason why such excellent stability was obtained is that the surface of the aluminum nitride sintered body exposed by laser irradiation has good electrical insulation properties.

In FIG. 3(a), 200 is an igniter module device for controlling an automobile engine as an electronic device, and the circuit board 10 is a package 201 made of aluminum plated with nickel and soldered (Pb-60wt% 5n) 20.
It is installed via 2. This soldering was carried out through a belt furnace at 240° C. with a sheet of solder interposed with the flux. Next, a silicone resin (not shown) was filled into the package 201 and cured, and then a cap 203 was attached to complete the module device 200 having the circuit configuration shown in FIG. 3(b).

The thermal resistance between the transistor chip 103 and the package 201 of the device 200 was as low as 0.9° C./W.

In addition, the device 200 was subjected to 2,000 temperature cycles of -55 to 150°C, and the transistor chip 103 was subjected to 90,000 temperature cycles of 50 to 125°C by intermittent energization.
No change in thermal resistance was observed even though the thermal resistance was applied several times. Furthermore, the transistor chip 103 and its control circuit are provided close to each other on the same substrate 100, making it smaller at approximately 375 mm compared to conventional devices in which the power element section and control circuit are provided on separate substrates. A modular device was obtained. Note that the module device 200 was attached to a housing together with other circuit devices, and a power distributor device that could guarantee the specifications shown in Table 1 was completed.

Item Rated Voltage Performance Guaranteed Voltage Range Operating Voltage Range Performance Guaranteed Temperature Range Storage Temperature Range Maximum Coil Current Operating Speed Range Installation Polarity Table 1 Guaranteed Value 2V 6~16V 4~24. V -40~120℃ -50~↓ 30℃ 0A 20~4000 (distributor) rpn+ Figure 4(a) shows the relationship between the output voltage and input current of the device and the rotation speed of the distributor. The power distribution device obtained in this example (curve A) has a lower overall output voltage than the power distribution device (curve n) incorporating a conventional module device in which the power element part and the control circuit are provided on separate boards. High values are obtained over a range of rotational speeds and with a small input current. Furthermore, in the idle rotation range, a high output voltage is obtained with a smaller input current than conventional devices. This shows that in the power distribution device of this embodiment, it is possible to suppress power consumption in the low speed rotation range and obtain a sufficient coil breaking current in the high speed fij+ rotation range. FIG. 4(b) shows the relationship between the circuit closure rate and the distributor rotation speed of the same device. This closed circuit rate control is
This is an important factor in suppressing power consumption in the low speed rotation range and obtaining sufficient coil breaking current in the high speed rotation range. Although the figure shows the case where the battery voltage is used as a parameter, it shows that the closed circuit ratio control is optimally performed even with fluctuations in the power supply voltage. In addition, the temperature of the mounting part of the power distribution device is 8.
Although it was installed in an engine room where the temperature reached 0°C, the closed circuit rate was well controlled.

Next, we will discuss a circuit board in which a power element and a control circuit for controlling it are mounted on the same board as a second embodiment, an electronic device to which the circuit is applied, that is, a high frequency voltage amplification circuit device, and the electronic device. The applied high-definition television device will be explained.

FIG. 5 is a sectional view of a main part of a circuit board that makes it possible to mount a power element and its control circuit on the same board. As shown in the figure, the circuit board 10 has a gold ryt layer (silver-palladium, thickness ↓ 3 μm) region 101 for the power element mounting portion.
A metal layer (silver-palladium, 13 .mu.m) region 111 for forming a power element control circuit is mounted on a sintered aluminum nitride substrate 1.0 OJ2. In the region 101, a field effect transistor chip (2X
2+m+.

5w, 15A) 103 is Pb-5wt%5n-1,5w
Mounted by t%Ag solder IO4 (not shown),
Area 1↓1 has resistor 113A and overcoat glass 1
13B is provided by printing and baking a thick film paste, and chip capacitor 113C and diode chip 11
3d is Pb-5wt%5n-1, 5wt%Ag solder 1
14 (not shown). A thin gold wire (diameter 35 μm) 10 is provided between the metal layer regions 101 and 111 and between the transistor chip 103 and the metal layer region 111.
5. A metal layer (
silver-palladium, thickness 13 μm) 121 is provided,
Glass 123 (same quality as glass 113B) is provided in a portion excluding a region substantially corresponding to a portion where transistor chip 103 is mounted.

The resistor 113A is adjusted to a desired resistance value as in the first embodiment. At this time, the resistor 113A is irradiated with laser (YAG, output 1
．． 6 W in air, Q-switch frequency 3 kHz, scanning speed 10 + am/see, beam diameter 50 μm). As a result, the resistance value was adjusted to within ±0.3% of the target value.

The resistor 113A was subjected to the same temperature cycle test (100 times) and high temperature moisture desorption test (1000 h) as in the first embodiment.

High temperature and high humidity test (LOOOH), and intermittent energization test (9
0000 times). In all tests, the resistance value was within 10.5% of the initial value, which was stable enough for practical use.

As in the first embodiment, the circuit board IO includes a package 201 made of aluminum plated with nickel and solder (P).
b-60wt%5n) 202. The soldering was carried out in a bell oven at 240'C with a sheet of solder interposed with flux. Next, silicone resin was filled into the package 201 and cured, and then the cap 203 was attached to complete the high frequency voltage amplification circuit device 200. FIG. 6 shows the input voltage waveform and output voltage waveform of the device 200. As is clear from this, the output voltage is 35V, which is 50 times the input voltage of 0.7μ, and the output voltage waveform also shows a time constant of 0.2ns or less for both rise and fall. There is. That is, the device 200 is sufficiently practical for high frequency voltage control in the 250 MHz band. The reason why the device 200 can follow such high-speed signals is that the transistor chip 1
The electrical connections between the 03 and its peripheral circuits and the control circuit wiring have been shortened as much as possible, and factors that inhibit resistance value stability against thermal and electrical stress have been removed.

The high frequency voltage amplification circuit device 200 is finally connected to the pixel 200.
It was incorporated into 0X2000 television equipment. As a result, it was confirmed that the device 200 is effective in increasing the definition of image display.

In the third example, a circuit board 10 and an igniter module device 200 using the same were completed in the same manner as in the first example. This removed non-oxide ceramic substrate is
They are boron nitride ceramics, silicon carbide ceramics, and silicon nitride ceramics. The resistor 113A on the circuit board 10 is exposed to laser irradiation (YAG, output 1.0
W, in air, Q switch frequency 3kHz, scanning speed 10
w/sec+beam diameter 50 μm).

As a result, the resistance value was adjusted to within ±0.3% of the target value. Igniter module device 1!200 using circuit board 10 and igniter module device 200
The power distribution device equipped with this also showed the same performance as the first example.

In the fourth embodiment, using a circuit board 1O produced in the same manner as in the first embodiment, laser irradiation (YAG, in air, Q
Switch frequency 3kHz.

A scanning speed of 10 m/see and a beam diameter of 50 μm) were applied. At this time, the laser beam was scanned in a single cut mode so that the resistor 113A was completely cut.

Laser output is 0.6~2. Adjusted within the OW range. The non-oxide ceramic substrates used were aluminum nitride ceramics, boron nitride ceramics, silicon carbide ceramics, and silicon nitride ceramics.

FIG. 7 shows the relationship between the laser output and the leakage current between the metal layer regions 111 arranged at both ends of the resistor 113A. First, the case of aluminum nitride ceramics will be explained.

The leakage current is 1O-10 in the range of 0.8-1.8W.
Unit A shows extremely good insulation. However, outside this range, leakage current increases and insulation deteriorates. For example, for 0.6W irradiation, approximately 1O-4A, and 2. In the case of OW, the value is about 10"-3A.The reason for the decrease in insulation is that in the former case, the overcoat glass 1
13B attenuates the laser output, and resistor 113A
This is because the energy necessary for cutting the resistor region remains uncut because sufficient energy is not supplied. In the latter case, the supplied energy is excessive, and although the resistor 113A is completely cut, the white body of the aluminum nitride sintered body substrate 100 is melted and chemically altered, and the electrical insulation properties are deteriorated. by producing harmful free AQ. In the range between 0 and 8 to 1.8 W, the resistor 113A
is completely cut and the generation of free @AQ is suppressed, so that insulation does not deteriorate.

A similar tendency is observed when the non-oxide ceramic substrate is made of materials other than aluminum nitride. The reason for this tendency is basically the same as in the case of aluminum nitride. In other words, if the supplied energy is too large, the substrate itself will melt and chemically change, resulting in the production of free boron in the case of boron nitride, the production of free silicon and free carbon in the case of silicon carbide, and the production of free silicon and free carbon in the case of silicon nitride. The generation of free silicon causes a decrease in insulation properties. In the range of 0.8 to 1.8 W, the resistor 113A is completely disconnected and the generation of free substances is suppressed, so that the insulation does not deteriorate. however,
The value of leakage current, which is in the range of 0.8 to 1.8 W, varies depending on the type of non-oxide ceramic substrate, but it depends on the electrical properties of the substrate itself, such as starting materials, additives, sintering process, etc. Note that the range of 0.8 to 1.8 W is based on the surface of the irradiated object, that is, the overcoat glass 113B.
The incident laser beam energy at the surface is 410W/-
This corresponds to 2 or more and 920W10n2 or less.

Next, non-oxide ceramic substrates, namely aluminum nitride, boron nitride, silicon carbide, and silicon nitride were directly irradiated with laser (YAG, in air, Q-switch frequency 3kHz,
A sample was prepared with a scanning speed of 1 oan/sec and a beam diameter of 50 μm. On this occasion.

The laser beam was scanned to form 20 irradiation lines with a length of 15 m and a pitch of 0.5 nn.

After that, a thin film electrode (Cr-Cu) was placed on the irradiation line.

1.8 x 22 m, electrode spacing 1.5 am). Laser output is 0.6~2. Adjusted within the OW range.

FIG. 8 shows the relationship between laser output and leakage current between thin film electrodes. First, the case of aluminum nitride ceramics will be explained. The leakage current changes significantly from 10-2A on the high output side to 0-11A on the low output side, with a boundary of 1.2W. The leakage current value of the 10-"A unit on the low output side is equivalent to that of aluminum nitride ceramics itself, and extremely good insulation is maintained under low output irradiation. However, when the output exceeds 1.4W, the leakage current decreases. The reason for the decrease in insulation is that under direct irradiation, the supplied energy is excessive, and the aluminum nitride sintered substrate 100 itself is melted and chemically altered.
By producing free AQ which impairs electrical insulation. The analysis results show that most of the altered material is amorphous A (lzo
a and contained free AQ. The trends of leakage current changes in FIG. 7 and FIG. 8 do not necessarily match.

In the former case, overcoat glass 113B and resistor 1
(The laser energy is attenuated by 3A, and the effective power of the laser irradiating the substrate itself is less than about IW. This discrepancy is due to this situation.The effective power of the laser beam reaching the substrate is , ↓ in Figure 7
, corresponds to around 8W and around 1 and 0W in FIG. This is 51OW/ffl11 when converted to the energy of the laser beam that reaches the non-oxide ceramic surface.
Corresponds to 2.

A similar tendency is observed when the non-oxide ceramic substrate is made of materials other than aluminum nitride. The reason for this tendency is basically the same as in the case of aluminum nitride. In other words, if the supplied energy is excessive, the substrate itself will melt and chemically change, and in the case of boron nitride, it will contain free boron along with boron oxide, and in the case of silicon carbide, it will release free silicon and free carbon along with silicon oxide, and silicon nitride. In this case, free silicon is produced together with silicon oxide, resulting in a decrease in insulation properties. In the range of 1.0 W or less, the generation of free substances is suppressed, so that insulation does not deteriorate. However, the current value in this range varies depending on the type of non-oxide ceramic substrate, and this largely depends on the electrical properties of the substrate itself, that is, the starting materials, additives, sintering process, etc. be. Therefore, the fact that the effective output of the laser beam reaching the substrate corresponds to around 1.8W (Fig. 7) and around 1.0W (Fig. 8) means that
The same is true for aluminum nitride.

In the present invention, the leakage current of the portion of the non-oxide ceramic substrate that is irradiated with the laser is linearly proportional to the applied voltage. However, outside the scope of the invention, for example, if too much energy is supplied and the insulation is compromised, the leakage current is proportional to the applied voltage, but its exponent exceeds. FIG. 9 shows the relationship between the laser output and the index when the substrate is directly irradiated with the laser. First, the case of an aluminum nitride substrate will be explained. When the laser output is 1.0 W or less, the index is approximately 1, but when high-power irradiation is performed, the index is approximately 3. A similar tendency is observed when the non-oxide ceramic substrate is made of materials other than aluminum nitride. The reason for this tendency is basically the same as in the case of aluminum nitride. The increase in the index has a deep causal relationship with the generation of free substances accompanying melting and chemical alteration of the substrate. Therefore, the above results indicate that in order to maintain the insulation properties of the substrate, the effective energy of the irradiation beam must be 1. This suggests that it is important not to exceed OW (5L OW/mm").

In the present invention, the resistor is not limited to being coated with overcoat glass. Even in such a case, the irradiation beam energy reaching the substrate is 1.
0W (510W/nm") The basic principle of the present invention remains unchanged.

In the present invention, the atmosphere during laser irradiation is not limited to air. For example, if the atmosphere is oxygen,
Nitrogen, inert gas (Ar, Ne.

Kr, Xe, CO2, etc.), water vapor, or when the irradiated object is intentionally blown with at least one gas selected from the group including air. The effects of the present invention can be enjoyed.

In the present invention, the beam used for trimming is YAG
It is not limited to laser (wavelength: 1.06 μm). For example, carbon dioxide laser (wavelength: ↓0.6 μm).

Ruby laser (wavelength: 0.69μm) + glass laser (wavelength: 1.06μm), alexandrite laser (
Wavelength: 0.75 μm), Ar ion laser (wavelength:
0.45μm), excimer laser (wavelength 20.19p)
m-0, '78 μm), etc. At this time, care must be taken so that the energy of the laser beam that reaches the surface of the non-oxide ceramic does not exceed 510W10n2.

In the embodiment, the case where the resistor to be trimmed is a thick film resistor has been described. However, Honsuimei is not limited to this. For example, if the resistor is Cr-
A thin film resistor such as AQ, Ni-Cr, Cr-8i, or tantalum oxide may be used, and the manufacturing method thereof is a vapor deposition method or a sputtering method.

(Chemical Vapor Deposition (CmicalV)
A method such as apor deposition method, ion blating method, etc. may also be used. The present invention can also be applied to cases where the surface of the thin film resistor is protected with a stable substance such as silicon oxide. In these cases as well, care must be taken to ensure that the energy of the laser beam that reaches the surface of the non-oxide ceramic exceeds 510 W/1 m+2.

In the examples, a resistive composition using RuO2 as a conductive substance has been described, but the present invention is not limited thereto. Ru0
As conductive substances to replace z, metal oxides other than ruthenium (IrO2, RhO2゜NbzOs, etc.), pyrochlore-type multicomponent oxides containing ruthenium (LaRu○s, etc.)
, Ca Ru Oa+S rRubs, B aRuO
a, B 1zRuzo7゜Pb2Ruzoe, PbzR
uzos, 6+TQ2Ru207°Ca o, 5S r
o, aRu Oa, etc.), pyrochlore-type multicomponent oxides that do not contain ruthenium (B i 2Rh zos, a.

PbzRh20z, Pbzl rzOe, 5. Pbzo
szOz.

TQ2I rzo7+ TQzRhz07. T1220
8207, etc.), metal hexaborides (sc l Y I L
a + c e +Pr, Nd, Sm, Eu, Gd,
Th, Dy.

Examples include hexaborides of Ho, Er, Tm, Yb, and Lu), tin oxide, and metal silicides. Further, it is possible to arbitrarily combine the above-mentioned conductive substances containing RuO2 as necessary. Therefore, the circuit board 10 and the electronic device 2
00 has no problem in using a resistor containing a conductive substance in its electric circuit.

In the circuit board and electronic device of the present invention, the non-oxide ceramic substrate is made of aluminum nitride, boron nitride,
It is not limited to cases where the main components are silicon carbide and silicon nitride. For example, in the present invention (↓) when the portion where the resistor composition is fired is made of at least one selected from the group of aluminum nitride, boron nitride, silicon carbide, and silicon nitride, (2) aluminum nitride, boron nitride .

When at least one selected from the group of silicon carbide and silicon nitride is combined with at least one selected from the group of aluminum oxide and beryllium oxide, and (3) aluminum nitride.

Even when the substrate is composed of two or more substances selected from the group of boron nitride, silicon carbide, silicon nitride, aluminum oxide, and beryllium oxide, it is included in the scope of the non-oxide ceramic substrate.

In the circuit board and electronic device of the present invention, the power element and its control circuit element are mounted on the same substrate, and the effects thereof are maximized. However, the present invention is not limited to this case, and the power element may not be mounted.

The electronic device in the present invention is not limited to, for example, the igniter module device 200 in the first embodiment or the high frequency voltage amplification circuit device 200 in the second embodiment, but includes, for example, the power distributor device in the first embodiment or the The television device in the embodiment is also included in the scope of the electronic device of the present invention.

Although not described in detail in the above embodiments, according to the present invention, a conventional trimming device (not equipped with a special mechanism) can be used, and the resistance value can be adjusted only by adjusting the laser output.

In addition, the same process as conventional thick film products using alumina substrates can be followed. It goes without saying that great economic efficiency results from these points.

Further, according to the present invention, there is provided a non-oxide ceramic circuit board having a resistor that facilitates resistance value adjustment and exhibits good resistance value stability, and an electronic device incorporating the same circuit board. We can provide the manufacturing method.

〔Effect of the invention〕

According to the present invention, a conventional trimming device can be used, and the resistance value can be adjusted only by adjusting the laser output. Also,
The same process as conventional thick film products using alumina substrates can be followed. Based on these points, great economic efficiency results. Furthermore, there is provided a non-acid-based ceramic circuit board having a resistor that facilitates resistance value adjustment and exhibits good resistance value stability, and an electronic device incorporating the same circuit board.

And, these manufacturing methods can be provided.

[Brief explanation of drawings]

The first engineering drawing is a perspective view of a circuit board on which a resistor according to an embodiment of the present invention is formed, FIG. 2 is a characteristic diagram showing the results of a temperature cycle test of the resistor, and FIG. 3 is an igniter module device for controlling an automobile engine. The front view (a) and the circuit diagram (b), and Figure 4 shows the output voltage. 5 is a front view of the power element, 6 is an input terminal waveform and output voltage waveform diagram of the device 200, 7 and 8 are leakage current characteristic diagrams with respect to laser output, FIG. 9 is a characteristic diagram of index versus laser output. ■0...Circuit board, 100...Aluminum nitride 11 sintered body board.

Claims (1)

[Claims] 1. A circuit board having a resistor provided on a non-oxide ceramic and having a resistance value adjusted by laser irradiation, wherein leakage current in the laser irradiated portion is A circuit board having a resistor provided on a non-oxide ceramic, which is linearly proportional to an applied voltage. 2. A circuit board having a resistor provided on a non-oxide ceramic according to claim 1, wherein the resistor is formed of a thick film or a thin film. 3. A circuit board having a resistor provided on a non-oxide ceramic according to claim 1 or 2, wherein the resistor is made of an inorganic material. 4. A circuit board having a resistor provided on a non-oxide ceramic according to claim 1, wherein the resistor is coated with an insulator. 5. Claims 1 to 4 are characterized in that the non-oxide ceramic provided with the resistor has at least one selected from the group consisting of aluminum nitride, silicon carbide, boron nitride, and silicon nitride as a main component. A circuit board having a resistor provided on a non-oxide ceramic. 6. Claims 1 to 4, wherein the non-oxide ceramic provided with the resistor is (1) aluminum nitride;
At least one member selected from the group consisting of silicon carbide, boron nitride, and silicon nitride, or (2) at least one member selected from the group consisting of aluminum nitride, silicon carbide, boron nitride, and silicon nitride, and aluminum oxide and oxide. A complex with at least one member selected from the group of beryllium, or (3
) aluminum nitride, silicon carbide, boron nitride, silicon nitride,
1. A circuit board having a resistor provided on a non-oxide ceramic, characterized in that it is composed of two or more kinds of substances selected from the group of aluminum oxide and beryllium oxide. 7. A circuit board provided on non-oxide ceramics and having a resistor whose resistance value is adjusted by laser irradiation, wherein the leakage current of the laser irradiation part is linearly proportional to the voltage applied to the same part. The circuit board designed to
0MHz or higher or power consumption per 1mm^2 is 0.2W
An electronic device characterized by being incorporated into an electric circuit having the semiconductor element as described above. 8. An electronic device according to claim 7, wherein the electric circuit is a circuit for controlling the rotational speed of an automobile engine or for amplifying an electric signal of a display device. 9. In a method for manufacturing a circuit board or an electronic device incorporating the circuit board into an electric circuit, which involves adjusting the resistance value of a resistor provided on a non-oxide ceramic by laser irradiation, the above-mentioned method of laser beam A method for manufacturing a circuit board or an electronic device incorporating the circuit board into an electric circuit, characterized in that irradiation energy on the surface of a non-oxide ceramic does not exceed 510 W/mm^2. 10. In claim 9, the resistor is a thick film resistor, and an incident energy of 410 W/mm^2 or more and 920 W/mm^2 or less is applied to the structure having a surface coating layer made of glass on the resistor. A method for manufacturing a circuit board or an electronic device incorporating the circuit board into an electric circuit, characterized in that the circuit board is irradiated with a laser beam having the following characteristics. 11. In claim 9 or 10, the irradiated part is exposed to at least one gas selected from the group of air, oxygen, nitrogen, inert gas (Ar, Ne, Kr, Xe, and CO_2), and water vapor. A method for manufacturing a circuit board or an electronic device incorporating the circuit board into an electric circuit.