JPH0335822B2 - - Google Patents

Info

Publication number
JPH0335822B2
JPH0335822B2 JP56180233A JP18023381A JPH0335822B2 JP H0335822 B2 JPH0335822 B2 JP H0335822B2 JP 56180233 A JP56180233 A JP 56180233A JP 18023381 A JP18023381 A JP 18023381A JP H0335822 B2 JPH0335822 B2 JP H0335822B2
Authority
JP
Japan
Prior art keywords
region
substrate
film
single crystal
semiconductor layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56180233A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5880831A (ja
Inventor
Seiichiro Kawamura
Hajime Kamioka
Tsutomu Ogawa
Junji Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56180233A priority Critical patent/JPS5880831A/ja
Publication of JPS5880831A publication Critical patent/JPS5880831A/ja
Publication of JPH0335822B2 publication Critical patent/JPH0335822B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3238—Materials thereof being insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3242—Structure
    • H10P14/3244—Layer structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • H10P14/3452—Microstructure
    • H10P14/3458—Monocrystalline
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3818—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using particle beams

Landscapes

  • Recrystallisation Techniques (AREA)
JP56180233A 1981-11-10 1981-11-10 半導体装置用基板の製造方法 Granted JPS5880831A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56180233A JPS5880831A (ja) 1981-11-10 1981-11-10 半導体装置用基板の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56180233A JPS5880831A (ja) 1981-11-10 1981-11-10 半導体装置用基板の製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP10732489A Division JPH03114219A (ja) 1989-04-28 1989-04-28 半導体装置用基板の製造方法

Publications (2)

Publication Number Publication Date
JPS5880831A JPS5880831A (ja) 1983-05-16
JPH0335822B2 true JPH0335822B2 (2) 1991-05-29

Family

ID=16079697

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56180233A Granted JPS5880831A (ja) 1981-11-10 1981-11-10 半導体装置用基板の製造方法

Country Status (1)

Country Link
JP (1) JPS5880831A (2)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6012722A (ja) * 1983-07-01 1985-01-23 Agency Of Ind Science & Technol 薄膜結晶形成法
JPS6017911A (ja) * 1983-07-11 1985-01-29 Agency Of Ind Science & Technol 半導体装置の製造方法
JPS6017910A (ja) * 1983-07-11 1985-01-29 Agency Of Ind Science & Technol 半導体装置の製造方法
JPH07105338B2 (ja) * 1985-08-07 1995-11-13 日本電気株式会社 半導体装置の製造方法
JPH03114219A (ja) * 1989-04-28 1991-05-15 Fujitsu Ltd 半導体装置用基板の製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5658269A (en) * 1979-10-17 1981-05-21 Seiko Epson Corp Mos type semiconductor device
JPS5678495A (en) * 1979-11-29 1981-06-27 Toshiba Corp Preparation of base

Also Published As

Publication number Publication date
JPS5880831A (ja) 1983-05-16

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