JPH0335833B2 - - Google Patents

Info

Publication number
JPH0335833B2
JPH0335833B2 JP56202288A JP20228881A JPH0335833B2 JP H0335833 B2 JPH0335833 B2 JP H0335833B2 JP 56202288 A JP56202288 A JP 56202288A JP 20228881 A JP20228881 A JP 20228881A JP H0335833 B2 JPH0335833 B2 JP H0335833B2
Authority
JP
Japan
Prior art keywords
silicon film
film
region
substrate
island
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56202288A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58102517A (ja
Inventor
Toshihiko Osada
Koichi Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56202288A priority Critical patent/JPS58102517A/ja
Publication of JPS58102517A publication Critical patent/JPS58102517A/ja
Publication of JPH0335833B2 publication Critical patent/JPH0335833B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment

Landscapes

  • Recrystallisation Techniques (AREA)
JP56202288A 1981-12-14 1981-12-14 半導体装置の製造方法 Granted JPS58102517A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56202288A JPS58102517A (ja) 1981-12-14 1981-12-14 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56202288A JPS58102517A (ja) 1981-12-14 1981-12-14 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS58102517A JPS58102517A (ja) 1983-06-18
JPH0335833B2 true JPH0335833B2 (de) 1991-05-29

Family

ID=16455051

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56202288A Granted JPS58102517A (ja) 1981-12-14 1981-12-14 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS58102517A (de)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56111239A (en) * 1980-01-07 1981-09-02 Chiyou Lsi Gijutsu Kenkyu Kumiai Preparation of semiconductor device

Also Published As

Publication number Publication date
JPS58102517A (ja) 1983-06-18

Similar Documents

Publication Publication Date Title
JP2608548B2 (ja) 半導体デバイスの製造方法
JPS6089953A (ja) 積層型半導体装置の製造方法
JPS61208277A (ja) 高効率光検出器およびその製造方法
JPH0335833B2 (de)
JPS61251115A (ja) 絶縁膜上の半導体単結晶成長方法
JPH02246267A (ja) 半導体装置の製造方法
JPH0467336B2 (de)
JPS60249312A (ja) 半導体装置の製造方法
JPS5885520A (ja) 半導体装置の製造方法
JPS6017911A (ja) 半導体装置の製造方法
JPS58175844A (ja) 半導体装置の製造方法
JPS6038872B2 (ja) 半導体装置の製造方法
JPH0722120B2 (ja) 半導体装置の製造方法
JPS63265464A (ja) 半導体装置の製造方法
JPH0257337B2 (de)
JPH0440858B2 (de)
JPS5831554A (ja) 半導体装置の製造方法
JPS60140812A (ja) 半導体装置の製造方法
JPS5893219A (ja) 半導体装置の製造方法
JPH01297814A (ja) 単結晶薄膜の製造方法
JPH01202876A (ja) ジョセフソン接合素子の作製方法
JPS6017910A (ja) 半導体装置の製造方法
JPH0616537B2 (ja) 半導体基体の製造方法
JPS6321819A (ja) 半導体装置の製造方法
JPS5886730A (ja) 半導体装置の製造方法