JPH0336530A - Optical shaping device - Google Patents

Optical shaping device

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Publication number
JPH0336530A
JPH0336530A JP17152289A JP17152289A JPH0336530A JP H0336530 A JPH0336530 A JP H0336530A JP 17152289 A JP17152289 A JP 17152289A JP 17152289 A JP17152289 A JP 17152289A JP H0336530 A JPH0336530 A JP H0336530A
Authority
JP
Japan
Prior art keywords
light
waveguide
substrate
optical
polarized light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17152289A
Other languages
Japanese (ja)
Inventor
Masanori Watanabe
昌規 渡辺
Osamu Yamamoto
修 山本
Tomohiko Yoshida
智彦 吉田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP17152289A priority Critical patent/JPH0336530A/en
Publication of JPH0336530A publication Critical patent/JPH0336530A/en
Pending legal-status Critical Current

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Abstract

PURPOSE:To shape light into light having superior convergence characteristics by returning radiating light emitted from the linear light source of a waveguide, etc., to the waveguide again. CONSTITUTION:Light emitting from a semiconductor laser 10 is converged by a lens 20 and made incident as (z)-axial polarized light (TM polarized light) on a 1st (y)-propagation waveguide 32 on a 1st substrate 30 and a higher harmonic (TM polarized light) which has its axis of polarization on a zy plane is radiated in the substrate 30 and projected from a projection-side end surface 35. A beam A is made incident on a lens 40 to become a parallel beam, which has its polarizing direction rotated by 90 deg. by passing through a lambda/4 plate 44 to become (x)-axial TE polarized light, which is projected as a beam B by passing through a 2nd conical plane lens 48. The beam B is made incident on the end surface 55 of a 2nd substrate 50 and converged on a 2nd waveguide 52, and the light is propagated in the 2nd waveguide 52 as (z)-axial polarized light (TM polarized light) by polarization mode conversion coupling and projected as the shaped light from its end surface. Consequently, the light is converted to a shape which has excellent light convergence characteristics.

Description

【発明の詳細な説明】 〈産業上の利用分野〉 本発明は、導波路などの線状の光源から指向性をもって
発する光を狭く集光できるように整形するのに適した光
整形装置に関する。さらに詳しくは、光ディスクの記録
密度を増大させるため短波長光を狭く集光するなどに用
いることのできる光整形装置に関する。
DETAILED DESCRIPTION OF THE INVENTION <Industrial Application Field> The present invention relates to an optical shaping device suitable for shaping light emitted with directionality from a linear light source such as a waveguide so that it can be narrowly focused. More specifically, the present invention relates to an optical shaping device that can be used to narrowly focus short wavelength light in order to increase the recording density of an optical disc.

〈従来技術〉 近年、小型の装置によって短波長のレーザ光を得る方法
として光波長変換が試みられている。ここて代表的な光
波長変換の方式として、複数の光の周波数が足し合わさ
れる和周波発生、その中でも特に同一周波数の2つ、あ
るいは3つの光の周波数が足し合わされる第2高調波発
生、第3高調波発生という方法がある。第2高調波発生
によシ、ソ 現在、例えば波長1.06μ風のYAG(イツト≠ウム
・アルミニウム・ガーネット)レーザを用いて波長0.
53μ九の緑色レーザ光、波長0.83〜0.84μ汎
の半導体レーザを用いて0.415〜0.42μ九の青
色レーザ光の発生が実現されている。
<Prior Art> In recent years, optical wavelength conversion has been attempted as a method of obtaining short wavelength laser light using a small device. Typical methods of optical wavelength conversion include sum frequency generation, in which the frequencies of multiple lights are added together, second harmonic generation, in particular, in which two or three frequencies of light of the same frequency are added together; There is a method called third harmonic generation. Currently, the second harmonic can be generated using a YAG (YAG) laser with a wavelength of 1.06 μm, for example, with a wavelength of 0.0 μm.
Generation of blue laser light of 0.415 to 0.42 μ9 has been realized using a green laser beam of 53 μ9 and a semiconductor laser having a wavelength of 0.83 to 0.84 μ.

このような例の一つとして、LiNbO3基板上にプロ
トン交換によって光導波路を作製し、0.84μyrb
*40mWの半導体レーザ光より1%の変換効率で0.
4mWの第2高調波を発生させた報告が「応用物理、第
56巻、12号、1637−1641ページ(1987
)Jに記載されている。幅2μ汎、深さ0.4μ扉の導
波路に半導体レーザ光を入射させると、高調波は基板面
に対し約16.2°下側に放射される。この場合、基本
波と高調波との位相整合条件はほとんど自動的に満足さ
れ、光線と結晶の角度や結晶の温度に対する制約がない
As one such example, an optical waveguide was fabricated by proton exchange on a LiNbO3 substrate, and a 0.84 μyrb
*0.0 with 1% conversion efficiency from 40mW semiconductor laser light.
A report on the generation of a 4 mW second harmonic was published in Applied Physics, Vol. 56, No. 12, pp. 1637-1641 (1987).
) is described in J. When a semiconductor laser beam is incident on a waveguide with a door width of 2μ and a depth of 0.4μ, harmonics are emitted approximately 16.2° below the substrate surface. In this case, the phase matching condition between the fundamental wave and the harmonics is almost automatically satisfied, and there are no restrictions on the angle between the light beam and the crystal or the temperature of the crystal.

〈発明が解決しようとする課題〉 短波長光源を光ディスクに用いようとする第1の理由は
記録密度の向上であり、良好な集光特性の実現が必須で
ある。しかしこの例による高調波発生の場合、ビームの
集光を行うのが難しいという問題点を有している。通常
のレンズは光源が点状であることを前提にして設計され
ており、そのまま用いることができない。線状の光源か
らの光を点状光源から発したように補正するシリンドリ
カルレンズは線光源が光軸に垂直である場合には有効で
あるが、この場合のように線光源の向きが光軸に近い場
合には補正が不十分となる。
<Problems to be Solved by the Invention> The first reason for using short wavelength light sources in optical discs is to improve recording density, and it is essential to realize good light focusing characteristics. However, in the case of harmonic generation according to this example, there is a problem in that it is difficult to focus the beam. Ordinary lenses are designed on the premise that the light source is point-like, and cannot be used as is. A cylindrical lens that corrects light from a linear light source as if it were emitted from a point light source is effective when the linear light source is perpendicular to the optical axis, but as in this case, the direction of the linear light source is If it is close to , the correction will be insufficient.

く課題を解決するための手段〉 本発明は、導波路型光波長変換素子などの線光源から指
向性をもって放射させる光を、複屈折基板にかける「偏
光モード変換による導波モード・放射モード結合」とい
う現象を利用して導波路を伝搬させるようにし、その端
面あるいはグレーティングカプラなどから出射させて良
好な集光特性をもつ光形状に変換する。
Means for Solving the Problems> The present invention is directed to ``waveguide mode/radiation mode coupling by polarization mode conversion,'' in which light emitted with directionality from a line light source such as a waveguide-type optical wavelength conversion element is applied to a birefringent substrate. This phenomenon is used to propagate through a waveguide, and the light is emitted from its end face or grating coupler, converting it into a light shape with good light focusing characteristics.

〈作 用〉 複屈折材料に釦ける直交する偏光成分に対する2つの屈
折率のうち、小さいほうをn (a)、大きいほうをn
 (b)とする。例えば負の単軸結晶においては、異常
光屈折率が、 (a)、常光屈折率がn(b)となる。
<Function> Of the two refractive indexes for orthogonal polarized light components on a birefringent material, the smaller one is n (a) and the larger one is n
(b). For example, in a negative uniaxial crystal, the extraordinary refractive index is (a) and the ordinary refractive index is n(b).

偏光モード変換による導波モード・放射モード結合は、
導波モードの等理屈折率をNeff(a)、導波モード
に直交する偏光に対する基板の屈折率をn −(b)と
するとき、 N ef f (al < no(b)の場合に生じ得
る。このとき放射光進行方向の導波路に対する角度は、 cos ’ (Neff (a)/ n−(b) )で
与えられる。
Waveguide mode/radiation mode coupling by polarization mode conversion is
When the isoretic refractive index of the guided mode is Neff (a) and the refractive index of the substrate for polarized light perpendicular to the guided mode is n - (b), the following equation occurs when N eff (al < no(b)). At this time, the angle of the direction of propagation of the emitted light with respect to the waveguide is given by cos' (Neff (a)/n-(b)).

なおこのモード変換を、■LiNbO3にかいてy板、
X板を用い、伝搬方向を光軸からずらす、■L 1Nb
03 * L 1Tao3における電気光学効果を利用
する、■LiNbO3において入射光量を光誘起屈折率
効果が起こる閾値よυ大きくする(波長が短い場合は少
ない光量で光誘起屈折率効果が発生し得る)、■プロト
ン交換LiNbO3導波路を作製する際、急加熱、急冷
などを行い、導波路部分に結晶歪み発生、導波路部分の
多結晶化、粒子方向ばらつき発生を起こす、などで効率
良く実現することができる。
Note that this mode conversion is written on ■LiNbO3 and the y board,
Using an X plate, shift the propagation direction from the optical axis, ■L 1Nb
03 * Utilizing the electro-optic effect in L 1Tao3, ■Increasing the amount of incident light in LiNbO3 beyond the threshold value at which the photo-induced refractive index effect occurs (if the wavelength is short, the photo-induced refractive index effect can occur with a small amount of light), ■When fabricating a proton-exchanged LiNbO3 waveguide, rapid heating and cooling are performed to generate crystal distortion in the waveguide, polycrystalization of the waveguide, and variation in particle orientation, which can be achieved efficiently. can.

〈実施例〉 以下、実施例に基づいて本発明の詳細な説明するが、本
発明はこれに限定されるものではない。
<Examples> Hereinafter, the present invention will be described in detail based on Examples, but the present invention is not limited thereto.

(実施例1) 第1図は本発明の第1の実施例である光整形装置の断面
図である。波長0.83μ九、出力100mWの半導体
レーザ10から発した光(基本波)はレンズ20によっ
て集光され、MgOドープLiNbO3の2カツト基板
からなる第1の基板30上のy伝搬第1の導波路32に
2軸方向の偏光(7M偏光)として入射する。第1の導
波路32の各部分からzy平面に偏光軸を有する高調波
(7M偏光)が基板中へ放射され、第1の基板30の出
射側端面35より出射する(ビームA)。
(Example 1) FIG. 1 is a sectional view of an optical shaping device that is a first example of the present invention. Light (fundamental wave) emitted from the semiconductor laser 10 with a wavelength of 0.83 μ9 and an output of 100 mW is focused by a lens 20, and is transmitted through a y-propagating first guide on a first substrate 30 made of a two-cut MgO-doped LiNbO3 substrate. The light enters the wave path 32 as biaxially polarized light (7M polarized light). A harmonic wave (7M polarized light) having a polarization axis in the zy plane is emitted from each part of the first waveguide 32 into the substrate, and is emitted from the emission side end face 35 of the first substrate 30 (beam A).

ビームAは片側が円錐面になったレンズ40に入射し平
行ビームとなる。続いてゲ4板44を通ることにより偏
光方向が90’回転し、X軸方向の偏光(基板30.5
0に対してTE偏光)となる。この光は第2の円錐面レ
ンズ48を通ることによシビームBとして出射する。な
お一般にビームAの第1の導波路32からの出射角とビ
ームBの第2の導波路52への結合角は異なるので、レ
ンズ40.48の面形状は異なる。
The beam A enters a lens 40 having a conical surface on one side and becomes a parallel beam. Subsequently, the polarization direction is rotated by 90' by passing through the Ge4 plate 44, and the polarization in the X-axis direction (substrate 30.5) is rotated by 90'.
TE polarization). This light passes through the second conical lens 48 and is emitted as a beam B. Note that since the exit angle of the beam A from the first waveguide 32 and the coupling angle of the beam B to the second waveguide 52 are generally different, the surface shapes of the lenses 40.48 are different.

ビームBは第2の基板50の端面55に入射して第2の
導波路52に収束され、偏光モード変換結合によって2
軸方向の偏光(TM偏光)として第2の導波路52を伝
搬し、その端面から整形された光として出射する。なお
LiNbO3はZ軸を光学軸とする負の単軸結晶であシ
、z軸方向の偏光は異常光屈折率、X軸方向の偏光は常
光屈折率を感じ、常光屈折率の方が大きいため、X軸偏
光放射モードと2軸偏光伝搬モードの結合条件が存在す
る。ただし導波モードは基板の屈折率よりやや高い等側
屈折率を感じるため、異常光等価屈折率が常光屈折率よ
シ大きく結合条件を満たさない場合も存在する。
The beam B is incident on the end surface 55 of the second substrate 50, is focused on the second waveguide 52, and is converted into 2 by polarization mode conversion coupling.
The light propagates through the second waveguide 52 as axially polarized light (TM polarized light) and exits from the end face as shaped light. Note that LiNbO3 is a negative uniaxial crystal with the Z-axis as the optical axis, and light polarized in the Z-axis direction has an extraordinary refractive index, while light polarized in the X-axis direction has an ordinary refractive index, and the ordinary refractive index is larger. , a coupling condition exists between the X-axis polarized radiation mode and the biaxially polarized propagation mode. However, since the waveguide mode senses an isolateral refractive index that is slightly higher than the refractive index of the substrate, there are cases where the extraordinary light equivalent refractive index is larger than the ordinary light refractive index and does not satisfy the coupling condition.

ここで第2の基板50は第1の基板10と同じ材料・方
位・導波路52は幅・深さ以外は導波路32と同じ工程
にて作製した。これはL i N b 03がたまた1
高調波の発生効率に釦いても偏光モード間結合効率にか
いても優れた材料であったからであυ、別の材料を用い
ても一向に差し支えない。
Here, the second substrate 50 was manufactured using the same material and orientation as the first substrate 10, and the waveguide 52 was manufactured in the same process as the waveguide 32 except for the width and depth. This happens to be L i N b 03 1
This is because the material was excellent in both harmonic generation efficiency and polarization mode coupling efficiency, so there is no problem in using another material.

導波路32釦よび52は以下のようにして作製した。2
20℃のビロリン酸に25分浸漬して深さ約O64μ扉
のプロトン交換層を形成した。導波路幅は導波路32に
対しては2μ渦、導波路52に対しては1.45μ汎で
ある。なお導波路52としては等側屈折率の作製ばらつ
きを考慮して幾つかの線幅のものを作製し、最も結合効
率の良いも、−V/ のを選んだ。プロトン交換に際し、ヒロリ酸を用いたが
、本発明はこれに限定されるものではなく他にリン酸、
安息香酸を用いてもよい。
The waveguides 32 and 52 were manufactured as follows. 2
It was immersed in birophosphoric acid at 20° C. for 25 minutes to form a proton exchange layer with a depth of about 64 μm. The waveguide width is 2μ for the waveguide 32 and 1.45μ for the waveguide 52. The waveguide 52 was fabricated with several line widths in consideration of variations in isolateral refractive index, and the waveguide 52 with the highest coupling efficiency was selected as -V/. Although hyrolic acid was used for proton exchange, the present invention is not limited to this, and other methods such as phosphoric acid,
Benzoic acid may also be used.

基板30および50の入射・出射面は光学研磨を行い、
それぞれの波長に対して反射防止コートを行った。な釦
レンズ40.48. λ/4板44の表面についても反
射防止コートを施した。
The input and output surfaces of the substrates 30 and 50 are optically polished.
Antireflection coating was applied to each wavelength. Button lens 40.48. The surface of the λ/4 plate 44 was also coated with an antireflection coating.

ここでビーム形状は、ビームBは導波路に対して完全に
軸対称なのに対し、ビームAは僅かに対称と異なる。こ
れはLiNbO3基板30.50が2軸を光軸とする一
軸性結晶であシ、ビームBばZ軸に直交した偏光(TE
偏光)であるが、ビームAはzy平面に偏光軸を有しく
TM偏光)、下向きの光と横向きの光とで偏光方向の2
軸に対する角度が異なるためである。しかし実際にはビ
ームAの光強度の大部分は下側に集中している。
Here, the beam shape is completely axially symmetrical for the beam B with respect to the waveguide, whereas the beam shape for the beam A is slightly different from the symmetrical shape. This is because the LiNbO3 substrate 30.50 is a uniaxial crystal with two optical axes, and the beam B is polarized light (TE
However, the beam A has a polarization axis in the zy plane (TM polarization), and the downward light and the sideways light have two polarization directions.
This is because the angles with respect to the axis are different. However, in reality, most of the light intensity of beam A is concentrated on the lower side.

従って下側への放射光の角度に合わせてレンズ40を選
定した。
Therefore, the lens 40 was selected depending on the angle of the downward emitted light.

実験によれば、基本波光量100mW、うち導波路32
への結合光量が約35mWのとき、高調波は約0.5m
W発生し、そのうち40%が導波路52を出射した。
According to experiments, the amount of fundamental wave light was 100 mW, including 32 waveguides.
When the amount of light coupled to is about 35mW, the harmonic wave is about 0.5m
W was generated, and 40% of it was emitted from the waveguide 52.

(実施例2) 本発明の第2の実施例f:第2図に示す。(Example 2) A second embodiment f of the invention is shown in FIG.

第1の実施例と異なる主な点は以下の通りである。The main points different from the first embodiment are as follows.

基板50はMgOをドープしないXカットLiN b 
Os基板とし、導波路52はTi拡散法で作製した。導
波路52の線幅は3μ卯とした。推定導波路深さは2.
7μ扉である。Ti拡散導波路にかいては基板と導波路
の屑折率差が小さいため、このように導波路深さを深く
してもシングルモード条件を保つことができる。導波路
1Iil?面の縦横比をほぼ1とすることによって、導
波路52の出射光の形状が集光に適したものとなる。ま
た屈折率差が小さいことからTi拡散導波路モードの偏
光モード変換放射角がほぼ一定(基板の複屈折によって
ほとんど決まる)となシ、作製が容易になる。
The substrate 50 is an X-cut LiN b that is not doped with MgO.
An Os substrate was used, and the waveguide 52 was fabricated by a Ti diffusion method. The line width of the waveguide 52 was 3 μm. The estimated waveguide depth is 2.
It is a 7μ door. In the Ti diffused waveguide, since the difference in the refractive index of debris between the substrate and the waveguide is small, single mode conditions can be maintained even if the waveguide depth is increased in this way. Waveguide 1il? By setting the aspect ratio of the surface to approximately 1, the shape of the emitted light from the waveguide 52 becomes suitable for condensing light. Furthermore, since the refractive index difference is small, the polarization mode conversion radiation angle of the Ti diffused waveguide mode is almost constant (mostly determined by the birefringence of the substrate), which facilitates manufacturing.

基板50としてXカット基板を用いたことに伴い、基板
50においてはTM放射モードとTE伝搬モードが結合
することになる。従って導波路32からのTM出射光は
そのままの偏光で基板50に入射でき、λA板44は不
要となる。これに伴いレンズ40.48を貼り合わせた
Since the X-cut substrate is used as the substrate 50, the TM radiation mode and the TE propagation mode are combined in the substrate 50. Therefore, the TM emitted light from the waveguide 32 can enter the substrate 50 with the same polarization, and the λA plate 44 becomes unnecessary. Along with this, lenses 40 and 48 were bonded together.

導波路は結晶の2軸に対し約20’傾いた方向に作製し
た。これは、このとき放射モード・伝搬モードの結合係
数が極大となるためである。
The waveguide was fabricated in a direction inclined by about 20' with respect to the two axes of the crystal. This is because the coupling coefficient between the radiation mode and the propagation mode becomes maximum at this time.

光源11としてYAGレーザを用いた。波長が変わった
ので高調波の発生効率を最適に保つよう導波路32の深
さを約0.55μ扉とした。
A YAG laser was used as the light source 11. Since the wavelength has changed, the depth of the waveguide 32 was set to approximately 0.55μ in order to maintain optimum harmonic generation efficiency.

導波路32への基本波の入射、導波路52からの高調波
の出射は端面からでなくグレーティングカブラ31.5
3を用いて行った。この方法は端面研磨の必要がないた
め低価格で大量に生産する場合に適している。
The fundamental wave enters the waveguide 32 and the harmonic wave exits from the waveguide 52 not from the end face but from the grating coupler 31.5.
3 was used. This method is suitable for mass production at low cost because it does not require end face polishing.

実験によれば、導波路32からの発生光量が0、3 m
 Wのとき、導波路52の出射光は発生光量の70%で
あった。
According to experiments, the amount of light generated from the waveguide 32 was 0.3 m
When W was used, the amount of light emitted from the waveguide 52 was 70% of the amount of generated light.

(実施例3) 本発明を光ファイバに対して適用した実施例を第3図に
示す。
(Embodiment 3) FIG. 3 shows an embodiment in which the present invention is applied to an optical fiber.

この光ファイバは以下のようにして作製された。This optical fiber was produced as follows.

LiNbO5結晶を光軸方向がy軸となるように直径1
00μ汎の円柱状に切シ出す。その表面にMgO薄膜層
を形成する。そのあと高温下でMgOの拡散を行い拡散
領域をクラッド層とする。この拡散条件を適当に調整す
ることによって、コア径を制御できる。次に、結晶の形
状を先端面と終端面とで円の大きさが異なるようなテー
パー状に加工・研磨し、アクリル樹脂よりなる第2クラ
ツド120を被覆し、最後に先端面と終端面を光学研磨
した。
The diameter of the LiNbO5 crystal is 1 so that the optical axis direction is the y-axis.
Cut out into a cylindrical shape with a diameter of 00μ. A thin MgO film layer is formed on the surface. Thereafter, MgO is diffused at high temperature to make the diffusion region a cladding layer. By appropriately adjusting this diffusion condition, the core diameter can be controlled. Next, the shape of the crystal is processed and polished into a tapered shape so that the size of the circle differs between the tip and end surfaces, the second cladding 120 made of acrylic resin is coated, and finally the tip and end surfaces are Optically polished.

波長0.83μmの半導体レーザ光源10からの光をレ
ンズ系20によってコア110に集光し、結晶のX軸方
向の偏光として入射した。この場合、コア110の非線
形光学係数dllによってX軸偏光の第2高調波がクラ
ッド100に−゛定の角度で放射される。この光はクラ
ッド100と第2クラツド120の界面で全反射される
。その界面は光軸方向に対してテーパー角をなして釦9
、コア前部での高調波放射角とコア後部の放射・導波モ
ード結合角との整合を取ることができる。従って界面で
反射された高調波はコア110の2軸方向に偏光する伝
搬モードとなり、コアの終端から良好な点光源からの光
として出射された。
Light from the semiconductor laser light source 10 with a wavelength of 0.83 μm was focused onto the core 110 by the lens system 20 and entered as polarized light in the X-axis direction of the crystal. In this case, the second harmonic of the X-axis polarization is radiated to the cladding 100 at a constant angle due to the nonlinear optical coefficient dll of the core 110. This light is totally reflected at the interface between the cladding 100 and the second cladding 120. The interface forms a taper angle with respect to the optical axis direction, and the button 9
, it is possible to match the harmonic radiation angle at the front of the core with the radiation/waveguide mode coupling angle at the rear of the core. Therefore, the harmonics reflected at the interface became a propagation mode polarized in the biaxial directions of the core 110, and were emitted from the end of the core as light from a good point light source.

本実施例においてはコア前部の光波長変換部とコア後部
の光整形部が一体化されているが、それぞれの機能を有
する光ファイバを組み合わせてもよい。そのとき光波長
変換ファイバと光整形ファイバの間に、実施例1・2で
用いた光学系40〜48のようなものを用いてもよい。
In this embodiment, the optical wavelength conversion section at the front of the core and the optical shaping section at the rear of the core are integrated, but optical fibers having respective functions may be combined. At that time, optical systems 40 to 48 used in Examples 1 and 2 may be used between the optical wavelength conversion fiber and the optical shaping fiber.

なか、以上の実施例を通じて、基板50あるいはクラッ
ド100の材料としては、複屈折性を有し、導波路が作
製しやすいものであれば、様々なものを用いることがで
きる。代表的なものとしては、LiNbO3の他にも、
L 1Ta03 、KNbO3+  β−BaB20a
、BNN(Ba2NaNbs015)、KDP(KH2
PO,)、KTP(KT iOP 04 ) 、K T
 A (K T t OA s 04 ) 、  B 
a T r 03などの無機非線形光学材料、5iC)
+(水晶)。
Among the above embodiments, various materials can be used for the substrate 50 or the cladding 100 as long as they have birefringence and are easy to fabricate a waveguide. In addition to LiNbO3, typical examples include:
L 1Ta03 , KNbO3+ β-BaB20a
, BNN (Ba2NaNbs015), KDP (KH2
PO,), KTP (KT iOP 04), KT
A (K T t OA s 04 ), B
Inorganic nonlinear optical materials such as a T r 03, 5iC)
+ (crystal).

ZnS、Zn5e、CaCO3,PLZT(Pb−La
−Zn−Ti・0の化合物)、 T i02. Al2
O3* Fe2O3+ F e203.NaNO3,c
as。
ZnS, Zn5e, CaCO3, PLZT(Pb-La
-Zn-Ti.0 compound), T i02. Al2
O3* Fe2O3+ Fe203. NaNO3,c
as.

CaAs、GaP、GaAlAs、InGaAIP。CaAs, GaP, GaAlAs, InGaAIP.

I nGaAsPなどの無機材料、およびMNA。Inorganic materials such as I nGaAsP, and MNA.

M A P (3−methyl−2,4−dini 
trophenylaminopropanatc)、
mNA (メタニトロアニIJン)、 LAP(L −
Arginine PhosphateMonohyd
rate)、DLAP(重水素化LAP)、尿素などの
有機非線形光学材料、延伸などによって配向化して複屈
折を与えたポリビニルアルコール、アクリル、PMMA
(ポリメチルメタクリレート)、PVDF(ポリフッ化
ビニリデン)などをを用いることが考えられる。
M A P (3-methyl-2,4-dini
trophenylaminopropanatc),
mNA (metanitroanil), LAP (L-
Arginine Phosphate Monohydr
organic nonlinear optical materials such as DLAP (deuterated LAP), urea, polyvinyl alcohol, acrylic, and PMMA that have been oriented by stretching to give them birefringence.
(polymethyl methacrylate), PVDF (polyvinylidene fluoride), etc. may be used.

〈発明の効果〉 本発明の光整形装置は、導波路などの線状光源から発す
る放射光を再び導波路に戻すことができ、集光特性の優
れた光に成型することができる。従って、導波路から放
射された短波長の光を用いた高密度光ディスクを実現す
ることなどが可能となる。
<Effects of the Invention> The light shaping device of the present invention can return the emitted light emitted from a linear light source such as a waveguide to the waveguide, and can shape the light into light with excellent focusing characteristics. Therefore, it becomes possible to realize a high-density optical disk using short wavelength light emitted from the waveguide.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の第1の実施例を示す構成断面図、第2
図は本発明の第2の実施例を示す構成鳥諏図、第3図は
本発明の第3の実施例を示す構成断面図である。 10・・・シー4光源  20・・・レンズ  30・
・・光波長変換導波路基板  32・・・光波長変換導
波路  40.48・・・円錐状レンズ  44・・・
λ/4板  50・・・光整形導波路基板  52・・
・光整形導波路
FIG. 1 is a cross-sectional view showing the structure of the first embodiment of the present invention;
The figure is a schematic diagram showing a second embodiment of the invention, and FIG. 3 is a sectional view showing a third embodiment of the invention. 10... Sea 4 light source 20... Lens 30.
... Optical wavelength conversion waveguide substrate 32 ... Optical wavelength conversion waveguide 40.48 ... Conical lens 44 ...
λ/4 plate 50... Optical shaping waveguide substrate 52...
・Optical shaping waveguide

Claims (1)

【特許請求の範囲】 1、第1の基板又は光ファイバに形成された第1の光導
波路と、 第2の基板又は光ファイバに形成され、複屈折材料より
なる第2の光導波路と、 前記第1の光導波路から前記第1の基板又は光ファイバ
に対する指向性を有して放射される光の、前記第2の光
導波路への入射角及び偏光方向を設定し、偏光モード変
換結合によって前記第2の光導波路に光を伝播させる収
束光学系とを備えてなり、 前記第2の光導波路から整形された光を出射することを
特徴とする光整形装置。
[Scope of Claims] 1. A first optical waveguide formed on a first substrate or an optical fiber; a second optical waveguide formed on a second substrate or optical fiber and made of a birefringent material; The incident angle and polarization direction of light emitted from the first optical waveguide with directionality toward the first substrate or optical fiber to the second optical waveguide are set, and the polarization mode conversion coupling is performed to An optical shaping device comprising: a converging optical system that propagates light to a second optical waveguide, and emits shaped light from the second optical waveguide.
JP17152289A 1989-07-03 1989-07-03 Optical shaping device Pending JPH0336530A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17152289A JPH0336530A (en) 1989-07-03 1989-07-03 Optical shaping device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17152289A JPH0336530A (en) 1989-07-03 1989-07-03 Optical shaping device

Publications (1)

Publication Number Publication Date
JPH0336530A true JPH0336530A (en) 1991-02-18

Family

ID=15924678

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17152289A Pending JPH0336530A (en) 1989-07-03 1989-07-03 Optical shaping device

Country Status (1)

Country Link
JP (1) JPH0336530A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008032112A (en) * 2006-07-28 2008-02-14 Aisin Seiki Co Ltd Seal and hydraulic clutch release device
JP2025513993A (en) * 2022-03-17 2025-05-02 エイエムエス-オスラム インターナショナル ゲーエムベーハー Optoelectronic module and method for operating the same - Patents.com

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008032112A (en) * 2006-07-28 2008-02-14 Aisin Seiki Co Ltd Seal and hydraulic clutch release device
JP2025513993A (en) * 2022-03-17 2025-05-02 エイエムエス-オスラム インターナショナル ゲーエムベーハー Optoelectronic module and method for operating the same - Patents.com

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