JPH0338736B2 - - Google Patents
Info
- Publication number
- JPH0338736B2 JPH0338736B2 JP56133670A JP13367081A JPH0338736B2 JP H0338736 B2 JPH0338736 B2 JP H0338736B2 JP 56133670 A JP56133670 A JP 56133670A JP 13367081 A JP13367081 A JP 13367081A JP H0338736 B2 JPH0338736 B2 JP H0338736B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- liquid phase
- epitaxial growth
- container
- liquid reservoir
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
- H10P14/2901—Materials
- H10P14/2913—Materials being Group IIB-VIA materials
- H10P14/2917—Tellurides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
- H10P14/263—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using melted materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
- H10P14/265—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using solutions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/34—Deposited materials, e.g. layers
- H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
- H10P14/3424—Deposited materials, e.g. layers characterised by the chemical composition being Group IIB-VIA materials
- H10P14/3432—Tellurides
Landscapes
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Description
【発明の詳細な説明】
本発明は液相エピタキシヤル成長装置、特に化
合物半導体のテルル化カドミウム水銀（Hg1-x
CdxTe）の液相エピタキシヤル成長装置の改良に
関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a liquid phase epitaxial growth apparatus, particularly a compound semiconductor cadmium mercury telluride (Hg 1-x
This paper relates to improvements in liquid phase epitaxial growth equipment for (Cd x Te).
化合物半導体のHg1-xCdxTeは、そのエネルギ
ーギヤツプが狭く、赤外線検知素子の材料として
用いられている。 The compound semiconductor Hg 1-x Cd x Te has a narrow energy gap and is used as a material for infrared sensing elements.
このようなHg1-xCdxTeの結晶の製造方法とし
ては、従来カーボンよりなる支持台に例えばテル
ル化カドミウム（CdTe）よりなる基板を埋設
し、該支持台上をスライドして移動するスライド
部材に液だめを設け、該液だめ中にテルル（Te）
を溶媒、カドミウム水銀（HgCd）を溶質とした
液相を充填し、該スライド部材をスライドさせて
基板上に上記液相を接触させることでCdTeの基
板上にHg1-xCdxTeの結晶層を形成するいわゆる
スライデイング法が用いられている。 Conventionally, a method for manufacturing such a crystal of Hg 1-x Cd x Te is to bury a substrate made of, for example, cadmium telluride (CdTe) in a support made of carbon, and to use a slide that slides on the support. A liquid reservoir is provided in the member, and tellurium (Te) is placed in the liquid reservoir.
By filling a liquid phase with Hg as a solvent and cadmium mercury (HgCd) as a solute, and sliding the slide member to bring the liquid phase into contact with the substrate, Hg 1-x Cd x Te crystals are formed on the CdTe substrate. A so-called sliding method is used to form layers.
しかし前記Teよりなる溶媒はスライド部材お
よび支持台よりなる液相エピタキシヤル成長装置
を形成するカーボン材に対してなじみやすく容易
に分離され難いため、たとえば基板上にHg1-x
CdxTeの結晶層を形成してから、スライド部材を
移動させて基板上に残留している液相を除去しよ
うとしても該液相がスライド部材あるいは支持台
に付着しやすいのでスライドする際に支持台、ス
ライド部材に付着している液相が基板に再び付着
し、基板上から液相をぬぐい去ることは困難であ
つた。 However, the solvent made of Te is compatible with the carbon material forming the liquid phase epitaxial growth apparatus made of the slide member and the support stand, and is difficult to be easily separated.
Even if you try to remove the liquid phase remaining on the substrate by moving the slide member after forming a crystal layer of Cd The liquid phase adhering to the support stand and the slide member adhered to the substrate again, and it was difficult to wipe off the liquid phase from the substrate.
そこで水銀（Hg）を溶媒として、該Hgに
CdTeを溶質として溶解させてHg1-xCdxTeの液
相を形成してから、CdTeの基板上にHg1-xCdx
Teの結晶層を液相エピタキシヤル成長装置によ
り形成する方法がとられている。 Therefore, using mercury (Hg) as a solvent,
CdTe is dissolved as a solute to form a liquid phase of Hg 1-x Cd x Te, and then Hg 1-x Cd x Te is deposited on the CdTe substrate.
A method has been adopted in which a Te crystal layer is formed using a liquid phase epitaxial growth apparatus.
ところで前述したHg1-xCdxTeのHgは易蒸発
性であり、このような易蒸発性のHgを含む
Hg1-xCdxTeの材料の液相を用いて基板上にエピ
タキシヤル成長させる場合には、従来第１図のよ
うな装置を用いていた。 By the way, the Hg in Hg 1-x Cd x Te mentioned above is easily evaporable, and Hg containing such easily evaporable Hg
Conventionally, when epitaxially growing a Hg 1-x Cd x Te material on a substrate using a liquid phase, an apparatus as shown in FIG. 1 has been used.
第１図は従来の液相エピタキシヤル成長装置の
概略図で、例えばカーボンまたは石英よりなる密
閉容器１中にHg1-xCdxTeの液相２を充填し、
CdTeの基板３を設置した基板支持棒４を下方に
移動させて該基板を液相中に浸漬させたのち前記
密閉容器１を加熱する加熱炉（図示せず）の温度
を下降させて液相の温度を冷却させてCdTe基板
上にHg1-xCdxTeの結晶を析出させてから基板支
持棒を上方に移動させて基板上にHg1-xCdxTeの
結晶層を形成させるいわゆるデイツピング法を用
いた装置である。 FIG. 1 is a schematic diagram of a conventional liquid phase epitaxial growth apparatus, in which a closed container 1 made of carbon or quartz is filled with a liquid phase 2 of Hg 1-x Cd x Te,
The substrate support rod 4 on which the CdTe substrate 3 is installed is moved downward to immerse the substrate in the liquid phase, and then the temperature of a heating furnace (not shown) that heats the sealed container 1 is lowered to bring the substrate into the liquid phase. The temperature is cooled to precipitate Hg 1-x Cd x Te crystals on the CdTe substrate, and then the substrate support rod is moved upward to form a Hg 1-x Cd x Te crystal layer on the substrate. This is a device that uses the dipping method.
しかし上記した装置では前記Hgが易蒸発性で
蒸気圧が高いため、前記Hgの蒸気圧に耐えるよ
うに装置を設計しなければならず、装置が高価な
ものとなる欠点がある。 However, in the above-mentioned apparatus, since the Hg is easily evaporated and has a high vapor pressure, the apparatus must be designed to withstand the vapor pressure of the Hg, resulting in an expensive apparatus.
また前記したカーボンよりなる支持台とスライ
ド部材よりなる液相エピタキシヤル成長装置を用
いて、液だめにHgを溶媒とし、CdTeを溶質とし
て形成した液相を充填し、該液相をCdTeの基板
に接触させて該エピタキシヤル成長装置を加熱す
る加熱炉の温度を低下させて基板にHg1-xCdxTe
の結晶層を形成するいわゆるスライデイング法に
よつてHg1-xCdxTeの結晶層を形成することも試
みた。しかしこの方法であるとエピタキシヤル成
長装置を挿入する水素ガス雰囲気の反応管が開管
状態になつており易蒸発性のHgが蒸発して反応
管より外部に逃散し均一な組成のHg1-xCdxTeの
結晶層が形成されない不都合を生じる。 In addition, using the liquid phase epitaxial growth apparatus consisting of the support base made of carbon and the slide member described above, a liquid reservoir is filled with a liquid phase formed by using Hg as a solvent and CdTe as a solute, and the liquid phase is applied to a CdTe substrate. Hg 1-x Cd x Te is applied to the substrate by lowering the temperature of the heating furnace that heats the epitaxial growth apparatus
We also attempted to form a crystal layer of Hg 1-x Cd x Te by the so-called sliding method. However, with this method, the reaction tube with a hydrogen gas atmosphere into which the epitaxial growth apparatus is inserted is open, and Hg, which is easily evaporated, evaporates and escapes from the reaction tube to the outside, resulting in Hg 1- of a uniform composition. This results in the inconvenience that a crystal layer of x Cd x Te is not formed.
本発明は上述した欠点を除去し、簡単な構造で
しかも易蒸発性のHgが蒸発しないような構造の
液相エピタキシヤル成長装置の提供を目的とする
ものである。 It is an object of the present invention to eliminate the above-mentioned drawbacks and to provide a liquid phase epitaxial growth apparatus having a simple structure and a structure in which easily evaporable Hg does not evaporate.
この目的は本発明によれば真空状態にある密閉
容器１６内に、基板の埋設された基板支持台１２
と、該基板上に成長させるべきHg1-xCdxTeの溶
液を収容する液だめを保持する液だめ保持部材１
５とを対向配置して固定封入するとともに、該密
閉容器１６の一端に管軸方向に延びる操作棒Ｂを
連結してなり、かつ該密閉容器全体を加熱炉１８
の反応管１７中に前記操作棒を介して回転可能に
設置した構成を有することを特徴とする液相エピ
タキシヤル成長装置によつて達成される。 According to the present invention, this purpose is to place a substrate support 12 in which a substrate is buried in a closed container 16 in a vacuum state.
and a liquid reservoir holding member 1 that holds a liquid reservoir containing a solution of Hg 1-x Cd x Te to be grown on the substrate.
5 are arranged facing each other and fixedly sealed, and an operating rod B extending in the tube axis direction is connected to one end of the hermetic container 16, and the entire hermetic container is placed in a heating furnace 18.
This is achieved by a liquid phase epitaxial growth apparatus characterized in that it is rotatably installed in the reaction tube 17 of the apparatus via the operating rod.
以下図面を用いて本発明の一実施例につき詳細
に説明する。 An embodiment of the present invention will be described in detail below with reference to the drawings.
第２図は本発明の液相エピタキシヤル成長装置
の一実施例の断面図で図示するようにCdTe基板
１１を埋設するカーボン製の基板支持台１２と該
基板支持台１２に対向して該基板上に形成すべき
易蒸発性の成分であるHgを溶媒としCdTeを溶質
としてHg1-xCdxTeの材料の液相１３を収容する
液だめ１４を保持するカーボン製の部材１５が石
英製の容器１６中に収容されている。該容器内部
は真空に排気されて一端が封止されている。そし
て基板１１と液だめ１４とは対向配置されている
ものとする。 FIG. 2 is a cross-sectional view of one embodiment of the liquid phase epitaxial growth apparatus of the present invention, and as shown in the figure, there is a substrate support 12 made of carbon in which a CdTe substrate 11 is embedded, and a substrate supporting the substrate 12 facing the substrate support 12. A carbon member 15 holding a liquid reservoir 14 containing a liquid phase 13 of Hg 1-x Cd x Te material with Hg as a solvent and CdTe as a solute, which is an easily evaporable component to be formed above, is made of quartz. It is housed in a container 16. The inside of the container is evacuated and one end is sealed. It is assumed that the substrate 11 and the liquid reservoir 14 are placed opposite each other.
このような基板支持台１２にCdTeの基板１１
を取りつけ、エピタキシヤル成長処理前には基板
が下方に向くように基板支持台は位置し、また液
だめにはHgを溶媒としCdTeを溶質としたHg1-x
CdxTeの材料を充填し、且つ基板支持台に図示の
如く対向配置される状態で前記基板支持台１２と
液だめを保持する部材１５とを石英容器内部に挿
入し該石英容器の内部を排気して端部Ａを封止す
る。その後封止した石英容器１６を反応管１７中
に挿入し、該反応管１７を加熱炉１８にて加熱す
る。 A CdTe substrate 11 is placed on such a substrate support 12.
The substrate support is positioned so that the substrate faces downward before the epitaxial growth process, and the Hg 1-x solution with Hg as the solvent and CdTe as the solute is placed in the liquid reservoir.
The substrate support 12 and the member 15 holding the liquid reservoir are filled with a Cd x Te material and are placed facing the substrate support as shown in the figure, and are inserted into the quartz container to expose the inside of the quartz container. Evacuate and seal end A. Thereafter, the sealed quartz container 16 is inserted into the reaction tube 17, and the reaction tube 17 is heated in the heating furnace 18.
このようにして液だめ１４中のHg1-xCdxTeの
材料が溶融した状態で該一端を封止した石英容器
１６を回転させて基板１１上にHg1-xCdxTeの液
相を接触させてから加熱炉の温度を冷却させて過
飽和状態となつたHg1-xCdxTeの液相の組成を結
晶層として基板上に成長させる。この回転時に基
板支持台と液だめ保持部材が離れないようにピン
等を用いて支持台と部材を固定する。その後所定
時間経過して基板上に所定の厚さ結晶層が成長し
た段階で再び一端を封止した石英容器を回転させ
て基板上に載つているHg1-xCdxTeの液相を取り
除く。このように一端を封止した石英容器を回転
させるには、該石英容器に石英棒Ｂ等を溶着等に
より取りつけて反応管１７の外部の方向に引き出
しておけばよい。またこの回転時に基板支持台と
液だめ保持部材が移動しないように石英容器１６
の内部に石英製の枠１９をもうけて該枠に液だめ
保持部材を固定する。 In this way, while the Hg 1-x Cd x Te material in the liquid reservoir 14 is molten, the quartz container 16 whose one end is sealed is rotated to form a liquid phase of Hg 1-x Cd x Te on the substrate 11. After contacting the substrate, the temperature of the heating furnace is cooled, and the supersaturated liquid phase composition of Hg 1-x Cd x Te is grown as a crystal layer on the substrate. The substrate support and the liquid reservoir holding member are fixed using pins or the like so that the substrate support and the liquid reservoir holding member do not separate during this rotation. After that, after a predetermined period of time has passed and a crystal layer of a predetermined thickness has grown on the substrate, the quartz container with one end sealed is rotated again to remove the liquid phase of Hg 1-x Cd x Te on the substrate. . In order to rotate the quartz container with one end sealed in this way, it is sufficient to attach a quartz rod B or the like to the quartz container by welding or the like and pull it out toward the outside of the reaction tube 17. The quartz container 16 is also
A frame 19 made of quartz is provided inside and a reservoir holding member is fixed to the frame.
以上述べたように本発明の液相エピタキシヤル
成長装置を用いれば簡単な装置で易蒸発性のHg
を含むHg1-xCdxTeの結晶層が容易に成長でき、
赤外線検知素子用の結晶が容易に得られる利点を
生じる。また以上の実施例の他に基板支持台およ
び液だめの保持部材は石英を用いて形成してもよ
い。 As described above, by using the liquid phase epitaxial growth apparatus of the present invention, easily evaporable Hg can be grown with a simple apparatus.
A crystalline layer of Hg 1-x Cd x Te containing
This has the advantage that crystals for infrared sensing elements can be easily obtained. Further, in addition to the embodiments described above, the substrate support stand and the holding member for the liquid reservoir may be formed using quartz.
第１図は従来の液相エピタキシヤル成長装置の
概略図で、第２図は本発明の液相エピタキシヤル
成長装置の一実施例を示す断面図である。
図において、１は密閉容器、２はHg1-xCdxTe
の液相、３はCdTeの基板、４は支持棒、１１は
基板、１２は基板支持台、１３はHg1-xCdxTeの
液相、１４は液だめ、１５は部材、１６は容器、
１７は反応管、１８は加熱炉、１９は石英枠、Ａ
は端部、Ｂは石英棒を示す。
FIG. 1 is a schematic diagram of a conventional liquid phase epitaxial growth apparatus, and FIG. 2 is a sectional view showing an embodiment of the liquid phase epitaxial growth apparatus of the present invention. In the figure, 1 is a closed container, 2 is Hg 1-x Cd x Te
3 is a CdTe substrate, 4 is a support rod, 11 is a substrate, 12 is a substrate support stand, 13 is a Hg 1-x Cd x Te liquid phase, 14 is a liquid reservoir, 15 is a member, 16 is a container ,
17 is a reaction tube, 18 is a heating furnace, 19 is a quartz frame, A
indicates the end, and B indicates the quartz rod.
Claims (1)
設された基板支持台１２と、該基板上に成長させ
るべきHgl−xCdxTeの溶液を収容する液だめを
保持する液だめ保持部材１５とを対向配置して固
定封入するとともに、該密閉容器１６の一端に管
軸方向に延びる操作棒Ｂを連結してなり、かつ該
密閉容器全体を加熱炉１８の反応管１７中に前記
操作棒を介して回転可能に設置した構成を有する
ことを特徴とする液相エピタキシヤル成長装置。1. In a sealed container 16 in a vacuum state, a substrate support 12 in which a substrate is buried and a liquid reservoir holding member 15 that holds a liquid reservoir containing a solution of Hgl-xCdxTe to be grown on the substrate are placed facing each other. At the same time, an operating rod B extending in the tube axis direction is connected to one end of the airtight container 16, and the entire airtight container is inserted into the reaction tube 17 of the heating furnace 18 via the operating rod. A liquid phase epitaxial growth apparatus characterized by having a rotatably installed configuration.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56133670A JPS5834925A (en) | 1981-08-25 | 1981-08-25 | Liquid phase epitaxial growth device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56133670A JPS5834925A (en) | 1981-08-25 | 1981-08-25 | Liquid phase epitaxial growth device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5834925A JPS5834925A (en) | 1983-03-01 |
| JPH0338736B2 true JPH0338736B2 (en) | 1991-06-11 |
Family
ID=15110157
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56133670A Granted JPS5834925A (en) | 1981-08-25 | 1981-08-25 | Liquid phase epitaxial growth device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5834925A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57194516A (en) * | 1981-05-26 | 1982-11-30 | Toyo Aluminium Kk | Aluminum foil for electrolytic condenser |
| US6855408B2 (en) | 2002-01-25 | 2005-02-15 | Showa Denko K.K. | Composite metal material and method for manufacturing the same, etched metal material and method for manufacturing the same and electrolytic capacitor |
| WO2017214670A1 (en) | 2016-06-14 | 2017-12-21 | Darryl Rodney Flack | Helmet with chin crush zone and integrated ventilation |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52144271A (en) * | 1976-05-27 | 1977-12-01 | Toshiba Corp | Preparation of semiconductor device |
-
1981
- 1981-08-25 JP JP56133670A patent/JPS5834925A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5834925A (en) | 1983-03-01 |
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