JPH0338750B2 - - Google Patents

Info

Publication number
JPH0338750B2
JPH0338750B2 JP57227429A JP22742982A JPH0338750B2 JP H0338750 B2 JPH0338750 B2 JP H0338750B2 JP 57227429 A JP57227429 A JP 57227429A JP 22742982 A JP22742982 A JP 22742982A JP H0338750 B2 JPH0338750 B2 JP H0338750B2
Authority
JP
Japan
Prior art keywords
substrate
insulating film
memory device
junction
semiconductor memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57227429A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59121869A (ja
Inventor
Sunao Shibata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP57227429A priority Critical patent/JPS59121869A/ja
Priority to DE8383303603T priority patent/DE3380582D1/de
Priority to EP83303603A priority patent/EP0102696B1/de
Priority to US06/506,593 priority patent/US4543597A/en
Publication of JPS59121869A publication Critical patent/JPS59121869A/ja
Publication of JPH0338750B2 publication Critical patent/JPH0338750B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/611—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using diodes as protective elements

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
JP57227429A 1982-06-30 1982-12-28 半導体記憶装置及びその製造方法 Granted JPS59121869A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP57227429A JPS59121869A (ja) 1982-12-28 1982-12-28 半導体記憶装置及びその製造方法
DE8383303603T DE3380582D1 (en) 1982-06-30 1983-06-22 Dynamic semiconductor memory and manufacturing method thereof
EP83303603A EP0102696B1 (de) 1982-06-30 1983-06-22 Dynamische Halbleiterspeicher und Verfahren zu seiner Herstellung
US06/506,593 US4543597A (en) 1982-06-30 1983-06-22 Dynamic semiconductor memory and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57227429A JPS59121869A (ja) 1982-12-28 1982-12-28 半導体記憶装置及びその製造方法

Publications (2)

Publication Number Publication Date
JPS59121869A JPS59121869A (ja) 1984-07-14
JPH0338750B2 true JPH0338750B2 (de) 1991-06-11

Family

ID=16860710

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57227429A Granted JPS59121869A (ja) 1982-06-30 1982-12-28 半導体記憶装置及びその製造方法

Country Status (1)

Country Link
JP (1) JPS59121869A (de)

Also Published As

Publication number Publication date
JPS59121869A (ja) 1984-07-14

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