JPH0339860U - - Google Patents
Info
- Publication number
- JPH0339860U JPH0339860U JP10085589U JP10085589U JPH0339860U JP H0339860 U JPH0339860 U JP H0339860U JP 10085589 U JP10085589 U JP 10085589U JP 10085589 U JP10085589 U JP 10085589U JP H0339860 U JPH0339860 U JP H0339860U
- Authority
- JP
- Japan
- Prior art keywords
- color filters
- film
- metal film
- color
- photodiode layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000002184 metal Substances 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims 2
- 239000003086 colorant Substances 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Landscapes
- Solid State Image Pick-Up Elements (AREA)
Description
第１図〜第５図は本考案に係る第１実施例を示
す図であり、第１図ａ及び第１図ｂはそれぞれセ
ンサとＩＣチツプとを一体に封止してパツケージ
化する前と後を示す斜視図、第２図ａはセンサを
分解した各層を示す斜視図、第２図ｂはセンサの
斜視図、第３図は素子体の一部縦断面図、第４図
は色フイルタの色の配置図、第５図は第２金属膜
の平面図である。第６図〜第１０図は本考案に係
る第２実施例を示す図であり、第６図は、色フイ
ルタの色の配置図、第７図は第２金属膜の平面図
、第８図は第２金属膜上に設けられる第２絶縁膜
の平面図、第９図は第８図の第２絶縁膜上に設け
られる第３金属膜の平面図、第１０図は第９図の
第３金属膜上に設けられる第３絶縁膜の平面図で
ある。第１１図及び第１２図はそれぞれ従来の技
術を示す図であり、第１１図は単結晶シリコンを
主体とするホトダイオード層を有する色センサの
構造の一例を示す断面図、第１２図は非晶質シリ
コンを主体とするホトダイオード層を有する色セ
ンサの構造の一例を示す断面図である。
１……センサ、２……ＩＣチツプ、１１……基
板、１２Ｒ……赤色系フイルタ、１２Ｇ……緑色
系フイルタ、１２Ｂ……青色系フイルタ、１３…
…透明導電膜、１４……非晶質シリコン膜、１５
……第１金属膜、１８，１１８……第２金属膜、
２０，１２０……第３金属膜、１７……第１絶縁
膜、１９，１１９……第２絶縁膜、２１，１２１
……第３絶縁膜。
1 to 5 are diagrams showing a first embodiment of the present invention, and FIGS. 1a and 1b respectively show the sensor and the IC chip before they are sealed together and packaged. FIG. 2a is a perspective view showing each layer of the sensor when disassembled, FIG. 2b is a perspective view of the sensor, FIG. 3 is a partial vertical sectional view of the element body, and FIG. 4 is a color filter FIG. 5 is a plan view of the second metal film. 6 to 10 are diagrams showing a second embodiment of the present invention, in which FIG. 6 is a color arrangement diagram of a color filter, FIG. 7 is a plan view of a second metal film, and FIG. 8 is a diagram showing a second embodiment of the present invention. is a plan view of the second insulating film provided on the second metal film, FIG. 9 is a plan view of the third metal film provided on the second insulating film of FIG. 8, and FIG. 3 is a plan view of a third insulating film provided on a third metal film; FIG. 11 and 12 are diagrams showing conventional techniques, respectively. FIG. 11 is a cross-sectional view showing an example of the structure of a color sensor having a photodiode layer mainly made of single crystal silicon, and FIG. 1 is a cross-sectional view showing an example of the structure of a color sensor having a photodiode layer mainly made of silicon. 1... Sensor, 2... IC chip, 11... Board, 12R... Red filter, 12G... Green filter, 12B... Blue filter, 13...
...Transparent conductive film, 14...Amorphous silicon film, 15
...first metal film, 18,118...second metal film,
20,120...Third metal film, 17...First insulating film, 19,119...Second insulating film, 21,121
...Third insulating film.
Claims (1)
しが互いに異なるように同一形状の色フイルタを
縦横同数ずつ配設し、前記絶縁基板の他の主面上
もしくは前記色フイルタ上に透明導電膜を設け、
該透明導電膜上に非晶質半導体を主体とするホト
ダイオード層を設け、該ホトダイオード層上の前
記各色フイルタに対向する位置にオーミツクコン
タクト用の第１金属膜を島状に設け、該第１金属
膜上に開口を有する絶縁膜で前記ホトダイオード
層上を被覆し、同一色の色フイルタに対向する位
置の第１金属膜どうしを電気的に接続する第２金
属膜を前記絶縁膜上に設けてなる色センサ。 On one principal surface of a translucent insulating substrate, color filters of the same shape are disposed in the same number vertically and horizontally so that adjacent colors are different from each other, and transparent color filters are disposed on the other principal surface of the insulating substrate or on the color filters. Provide a conductive film,
A photodiode layer mainly made of an amorphous semiconductor is provided on the transparent conductive film, and a first metal film for ohmic contact is provided in the form of an island on the photodiode layer at a position facing each of the color filters. The photodiode layer is covered with an insulating film having an opening on the metal film, and a second metal film is provided on the insulating film to electrically connect the first metal films at positions opposite to color filters of the same color. color sensor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1989100855U JP2529248Y2 (en) | 1989-08-29 | 1989-08-29 | Color sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1989100855U JP2529248Y2 (en) | 1989-08-29 | 1989-08-29 | Color sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0339860U true JPH0339860U (en) | 1991-04-17 |
| JP2529248Y2 JP2529248Y2 (en) | 1997-03-19 |
Family
ID=31649839
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1989100855U Expired - Lifetime JP2529248Y2 (en) | 1989-08-29 | 1989-08-29 | Color sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2529248Y2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006085165A (en) * | 2004-03-09 | 2006-03-30 | Senzo Kobayashi | Information display device |
| JP2011095766A (en) * | 2004-03-09 | 2011-05-12 | Senzo Kobayashi | Information display device |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6184957A (en) * | 1984-10-03 | 1986-04-30 | Matsushita Electric Ind Co Ltd | Color photoconductive element |
| JPS61255191A (en) * | 1985-05-08 | 1986-11-12 | Fuji Photo Film Co Ltd | Accumulation type color image sensor |
| JPS61255192A (en) * | 1985-05-08 | 1986-11-12 | Fuji Photo Film Co Ltd | Accumulation type color image sensor |
| JPS63200136U (en) * | 1987-06-09 | 1988-12-23 |
-
1989
- 1989-08-29 JP JP1989100855U patent/JP2529248Y2/en not_active Expired - Lifetime
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6184957A (en) * | 1984-10-03 | 1986-04-30 | Matsushita Electric Ind Co Ltd | Color photoconductive element |
| JPS61255191A (en) * | 1985-05-08 | 1986-11-12 | Fuji Photo Film Co Ltd | Accumulation type color image sensor |
| JPS61255192A (en) * | 1985-05-08 | 1986-11-12 | Fuji Photo Film Co Ltd | Accumulation type color image sensor |
| JPS63200136U (en) * | 1987-06-09 | 1988-12-23 |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006085165A (en) * | 2004-03-09 | 2006-03-30 | Senzo Kobayashi | Information display device |
| JP2011095766A (en) * | 2004-03-09 | 2011-05-12 | Senzo Kobayashi | Information display device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2529248Y2 (en) | 1997-03-19 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |