JPH0340455A - Ceramic chip carrier - Google Patents
Ceramic chip carrierInfo
- Publication number
- JPH0340455A JPH0340455A JP458390A JP458390A JPH0340455A JP H0340455 A JPH0340455 A JP H0340455A JP 458390 A JP458390 A JP 458390A JP 458390 A JP458390 A JP 458390A JP H0340455 A JPH0340455 A JP H0340455A
- Authority
- JP
- Japan
- Prior art keywords
- ceramic
- chip carrier
- semiconductor element
- copper
- element mounting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000919 ceramic Substances 0.000 title claims description 33
- 239000004065 semiconductor Substances 0.000 claims description 22
- 239000000203 mixture Substances 0.000 claims description 12
- 239000010949 copper Substances 0.000 claims description 9
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 8
- 229910052750 molybdenum Inorganic materials 0.000 claims description 8
- 239000011733 molybdenum Substances 0.000 claims description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 7
- 229910052802 copper Inorganic materials 0.000 claims description 7
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 6
- 229910052721 tungsten Inorganic materials 0.000 claims description 6
- 239000010937 tungsten Substances 0.000 claims description 6
- 239000000956 alloy Substances 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 239000011162 core material Substances 0.000 claims description 4
- 238000005219 brazing Methods 0.000 claims description 3
- 230000008018 melting Effects 0.000 claims 1
- 238000002844 melting Methods 0.000 claims 1
- 238000000034 method Methods 0.000 description 8
- 239000007769 metal material Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 239000002131 composite material Substances 0.000 description 4
- SBYXRAKIOMOBFF-UHFFFAOYSA-N copper tungsten Chemical group [Cu].[W] SBYXRAKIOMOBFF-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000000969 carrier Substances 0.000 description 3
- WUUZKBJEUBFVMV-UHFFFAOYSA-N copper molybdenum Chemical compound [Cu].[Mo] WUUZKBJEUBFVMV-UHFFFAOYSA-N 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 230000008595 infiltration Effects 0.000 description 2
- 238000001764 infiltration Methods 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052863 mullite Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- JTJMJGYZQZDUJJ-UHFFFAOYSA-N phencyclidine Chemical compound C1CCCCN1C1(C=2C=CC=CC=2)CCCCC1 JTJMJGYZQZDUJJ-UHFFFAOYSA-N 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000008961 swelling Effects 0.000 description 1
- 238000004018 waxing Methods 0.000 description 1
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は、セラミックチップキャリヤーに関するもので
、更に詳しくはセラミックチップキャリヤーの半導体素
子搭載部材として、銅−タングステンあるいは銅−モリ
ブデンよりなる非合金組成体を用いたものである。Detailed Description of the Invention [Industrial Application Field] The present invention relates to a ceramic chip carrier, and more specifically, a non-alloy composition of copper-tungsten or copper-molybdenum is used as a semiconductor element mounting member of the ceramic chip carrier. It uses the body.
［従来の技術］
従来、半導体用セラミックパッケージはグリーンセラミ
ックシートに必要金属層をスクリーンプリント法により
印刷しこれを積層し焼結−体化して、このセラミック体
の金属層に必要な金属部材をろう付けにより取りつける
方法か、又はプレス法によってセラミック枠体を成形し
、これにメタライズを施して、このメタライズ部を介し
て金属部材とろう付性により接着しパッケージとしてき
た。[Conventional technology] Conventionally, ceramic packages for semiconductors have been produced by printing the necessary metal layers on green ceramic sheets using a screen printing method, laminating them and sintering them, and then waxing the necessary metal members for the metal layers of the ceramic body. A ceramic frame is formed by attaching by attaching or by pressing, metallized, and bonded to a metal member through the metallized portion to form a package.
第２図はセラミックチップキャリヤーの従来法によって
製作されたものの要部断面図であり、全体はセラミック
の積層品ｌからなり、中央のキャビティー底部に半導体
素子搭載部２であるメタライズ部を有し又メタライズに
より形成された外部への導出リード４．５を具えており
更に外部への導出リードであるメタライズによって形成
されたリード３を有している。従って半導体素子搭載部
２の下部はセラミックにより構成されているものである
。Figure 2 is a cross-sectional view of the main parts of a ceramic chip carrier manufactured by a conventional method.The whole is made of a ceramic laminate l, and has a metallized part, which is a semiconductor element mounting part 2, at the bottom of a central cavity. It also has leads 4.5 extending to the outside formed by metallization, and further has leads 3 formed by metallization as leads leading to the outside. Therefore, the lower part of the semiconductor element mounting portion 2 is made of ceramic.
しかし、積層パッケージの中でも半導体素子を接着する
部分、いわゆる半導体素子搭載部がセラミック上のメタ
ライズ部によって構成されているパッケージでは、セラ
ミックを焼結一体化する際に起るシート自身の歪或いは
積層時の外的な力によって生ずる歪により半導体素子搭
載部のセラミックに反りゃ、うねりを生ずることがある
という欠点があり、半導体素子の接着強度が弱いとか又
半導体素子が水平に搭載されない等の欠点が生じ、半導
体素子搭載部の平坦なパッケージを製作するためにすで
に特願昭５Ｂ−２１４３４１号として提案された発明等
がなされてきた。However, in laminated packages where the part to which the semiconductor element is bonded, the so-called semiconductor element mounting part, is made up of a metallized part on the ceramic, distortion of the sheet itself that occurs when the ceramic is sintered and integrated, or the stacking process If the ceramic of the semiconductor element mounting part warps due to distortion caused by external force, it may cause waviness, which has the disadvantage that the adhesive strength of the semiconductor element is weak, and the semiconductor element cannot be mounted horizontally. Therefore, an invention proposed in Japanese Patent Application No. 5B-214341 has already been made in order to manufacture a flat package with a semiconductor element mounting portion.
最近、技術の発展に伴って大型の素子を搭載するパッケ
ージが要求されるようになり、したがってパッケージ自
体も大型化され、セラミックの歪を僅少にとどめたり、
接合する半導体素子搭載部材との膨脂差を解消せしめた
りすることがますます困難さを増してきた。Recently, with the development of technology, there has been a demand for packages that can mount large-sized elements, and the packages themselves have also become larger.
It has become increasingly difficult to eliminate the difference in swelling between the semiconductor element mounting member and the semiconductor element mounting member to be bonded.
一方、シリコン素子と銅を主体とする端子板が接続され
る構造の半導体装置において、両者の中間に、胴中にタ
ングステン又はモリブデンを分散せしめて焼結してなる
電極を介在せしめた装置も知られている（特開昭５０−
８２７７８号公報参照）。On the other hand, in a semiconductor device having a structure in which a silicon element and a terminal plate mainly made of copper are connected, a device is also known in which an electrode made of sintered tungsten or molybdenum dispersed in the body is interposed between the two. (Japanese Unexamined Patent Application Publication No. 1973-
(See Publication No. 82778).
［発明が解決しようとする課Ｂ］
本発明は前記諸欠点、諸問題を一挙に解決するだけでな
く、大型化を可能にしたセラミックキャリヤーを提供す
ることを目的とする。又、用いる材質については、特開
昭５０−８２７７８号公報記載の技術では、銅とタング
ステン又はモリブデンとの混和物が焼結体であるため、
熱膨脹係数、熱伝導率ともＷ（又はＭ ｏ ） ／Ｃｕ
の複合則があてはまらず、実質的には空孔が存在するも
ので、メツキ性、気密性や熱伝導性等の基板に要求され
る特性の点で問題がある。本発明では、Ｗ（又はＭ ｏ
） ／ Ｃｕの複合材料におけるこの点の問題も解決
するものである。[Problem B to be Solved by the Invention] An object of the present invention is to not only solve the above-mentioned drawbacks and problems all at once, but also to provide a ceramic carrier that can be made larger. Regarding the material used, in the technique described in JP-A-50-82778, a mixture of copper and tungsten or molybdenum is a sintered body.
Both thermal expansion coefficient and thermal conductivity are W (or M o )/Cu
The composite rule does not apply, and there are essentially pores, which poses problems in terms of properties required of the substrate, such as plating properties, airtightness, and thermal conductivity. In the present invention, W (or M o
) / Cu composite material also solves this problem.
［課題を解決するための手段］
本発明は、セラミック枠体と、重量％で９９〜７０％の
タングステン又はモリブデン多孔体を芯材としてこれに
１〜３０％の銅を溶融して充填してなる非合金組成体か
らなる板状の半導体素子搭載部とがろう付けにより直接
接合された構造であるセラミックチップキャリヤーであ
る。[Means for Solving the Problems] The present invention includes a ceramic frame and a porous body of 99 to 70% by weight tungsten or molybdenum as a core material, which is melted and filled with 1 to 30% copper. This ceramic chip carrier has a structure in which a plate-shaped semiconductor element mounting portion made of a non-alloy composition is directly joined by brazing.
本発明で使用する非合金組成体は、上記のとおりタング
ステン又はモリブテン多孔体を芯材とし、それに鋼材を
溶融して充填せしめた複合材料である。これは溶浸法と
呼ばれる方法であって、この方法によると、毛細管現象
によりタングステン又はモリブデンの多孔体の空隙率は
溶融した銅によりほぼ完全に充填されるので、非合金組
成体の密度は実質１００％になる。As described above, the non-alloy composition used in the present invention is a composite material in which a porous tungsten or molybdenum material is used as a core material, and steel material is melted and filled into the core material. This is a method called the infiltration method, and according to this method, the porosity of the tungsten or molybdenum porous body is almost completely filled with molten copper due to capillarity, so the density of the non-alloyed composition is substantially reduced. It becomes 100%.
前記材料の持つ特性のうち熱膨脹係数及び熱伝導率を第
１表で銅−タングステン組成体について、第２表て銅−
モリブデン組成体について示した。Among the properties of the materials, the thermal expansion coefficient and thermal conductivity are shown in Table 1 for copper-tungsten compositions, and in Table 2 for copper-tungsten compositions.
The molybdenum composition is shown below.
第１表
第２表
第１表及び第２表から明らかなように、銅−タングステ
ン、銅−モリブデン組成体は、銅の含有量の比較的少い
領域においてはセラミックの持つ熱膨脹係数５０〜７５
Ｘ１０−７に適合する熱膨脹係数を有し、しかもその値
はＷ（又はＭ ｏ ）／Ｃｕの複合則に基づく理論値と
ほぼ一致するため、銅含有率を変えることによって任意
に必要とする熱膨脹係数を有する複合金属材料を得るこ
とができる。したがって現在使用されている金属よりも
熱膨脹係数がセラミックのそれに適合する金属材料を得
ることができる。As is clear from Tables 1 and 2, copper-tungsten and copper-molybdenum compositions have a thermal expansion coefficient of 50 to 75, which is the same as that of ceramics, in areas where the copper content is relatively low.
It has a coefficient of thermal expansion that conforms to A composite metal material having a modulus can be obtained. Therefore, it is possible to obtain a metal material whose thermal expansion coefficient matches that of ceramics better than currently used metals.
［実施例］
第１図は本願発明によるセラミックチップキャリヤーの
要部断面である。セラミック枠体１１はテープ積層法に
より作成される。所定形状に形成され導体印刷を行った
グーンセラミックシートを複数層積層し、これを焼結一
体化したものを用意し、別に銅−モリブデン組成体のう
ちシリコーンと最も熱膨脹係数の近い溶浸法により作成
した銅１％、モリブデン９９％組成体の板を半導体素子
搭載部材１２として用意しニッケルメッキの所定厚みを
施しておく。積層セラミック、特にチップキャリヤーな
どの場合では一枚のグリーンシートに多数個のパターン
をつけて積層一体化するのが常法であり、従って前記部
材１２のろう付も個々のチップキャリヤーに分割する前
にセラミック枠体１１とろう付された。ろう付後所定の
メツキが施された後個々のチップキャリヤーに分割され
、必要特性がテストされた。勿論テスト結果に異常はな
く全く問題となるべき欠点はなかった。なお、図中、１
３，１４．１５はそれぞれメタライズ部である。[Example] FIG. 1 is a sectional view of a main part of a ceramic chip carrier according to the present invention. The ceramic frame 11 is made by a tape lamination method. A plurality of layers of Goon ceramic sheets formed into a predetermined shape and printed with conductors are laminated and sintered into one piece, and then a copper-molybdenum composition is prepared using an infiltration method, which has a coefficient of thermal expansion closest to that of silicone. A plate made of a composition of 1% copper and 99% molybdenum is prepared as a semiconductor element mounting member 12 and nickel plated to a predetermined thickness. In the case of laminated ceramics, especially chip carriers, it is a common practice to attach multiple patterns to a single green sheet and laminate them together, and therefore the component 12 is brazed before being divided into individual chip carriers. It was brazed to the ceramic frame 11. After brazing and plating, they were divided into individual chip carriers and tested for required characteristics. Of course, there were no abnormalities in the test results, and there were no problems at all. In addition, in the figure, 1
3, 14, and 15 are metallized portions, respectively.
［発明の効果］
以上説明したごとく、本発明はセラミック材料に金属材
料を半導体素子搭載部材として取りつけたセラミックチ
ップキャリヤーであって、用いる金属材料の持つセラミ
ック例えばムライトなどにも適合しているため、この金
属材料をセラミック部と容易に置き換えることができ反
りや歪のない平坦な半導体搭載部を持つものをつくり出
せるし、したがって大型化も容易である。。更には熱伝
導率が大きいため放熱部材として用いることもでき大容
量化された半導体素子にも高い熱放散を必要とするもの
にも最適であり、又本金属材料にメツキ層を形成するこ
とにより直接半導体素子を接着できるためパッケージの
部品点数を減らしたり形状をシンプルにしたりすること
ができ今後のセラミックチップキャリヤーとして必須の
ものとなるものである。[Effects of the Invention] As explained above, the present invention is a ceramic chip carrier in which a metal material is attached to a ceramic material as a semiconductor element mounting member, and is compatible with ceramics such as mullite, which the metal material used has. This metal material can be easily replaced with a ceramic part, making it possible to create a flat semiconductor mounting part without warping or distortion, and therefore making it easy to increase the size. . Furthermore, due to its high thermal conductivity, it can be used as a heat dissipation member, making it ideal for large-capacity semiconductor devices and other devices that require high heat dissipation.Also, by forming a plating layer on this metal material, Since semiconductor elements can be directly bonded, it is possible to reduce the number of package parts and simplify the shape of the package, making it indispensable as a ceramic chip carrier in the future.
第１図は本発明の実施例のセラミックチップキャリヤー
の要部断面図、第２図は従来技術によるセラミックチッ
プキャリヤーの要部断面図である。
ｌ・・・セラミックの積層品、
２・・・半導体素子搭載部、３・・・リード、４．５・
・・導出リード、１１・・・セラミック枠体、１２・・
・半導体素子搭載部材、
１３．１４．１５・・・メタライズ部。FIG. 1 is a sectional view of a main part of a ceramic chip carrier according to an embodiment of the present invention, and FIG. 2 is a sectional view of a main part of a ceramic chip carrier according to the prior art. l... Ceramic laminate product, 2... Semiconductor element mounting part, 3... Lead, 4.5.
... Lead-out lead, 11... Ceramic frame, 12...
- Semiconductor element mounting member, 13.14.15...metalized part.
Claims (1)
ン又はモリブデン多孔体を芯材として、これに１〜３０
％の銅を溶融して充填してなる非合金組成体からなる板
状の半導体素子搭載部とがろう付けにより直接接合され
た構造であることを特徴とするセラミックチップキャリ
ヤー。A ceramic frame and a tungsten or molybdenum porous body of 99 to 70% by weight as a core material, and 1 to 30
1. A ceramic chip carrier characterized by having a structure in which a plate-shaped semiconductor element mounting portion made of a non-alloy composition formed by melting and filling % of copper is directly joined by brazing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP458390A JPH0340455A (en) | 1990-01-16 | 1990-01-16 | Ceramic chip carrier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP458390A JPH0340455A (en) | 1990-01-16 | 1990-01-16 | Ceramic chip carrier |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57157684A Division JPS5946050A (en) | 1982-09-09 | 1982-09-09 | Ceramic package for semiconductor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0340455A true JPH0340455A (en) | 1991-02-21 |
Family
ID=11588062
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP458390A Pending JPH0340455A (en) | 1990-01-16 | 1990-01-16 | Ceramic chip carrier |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0340455A (en) |
-
1990
- 1990-01-16 JP JP458390A patent/JPH0340455A/en active Pending
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