JPH0340531A - Optical transmitter - Google Patents

Optical transmitter

Info

Publication number
JPH0340531A
JPH0340531A JP1174736A JP17473689A JPH0340531A JP H0340531 A JPH0340531 A JP H0340531A JP 1174736 A JP1174736 A JP 1174736A JP 17473689 A JP17473689 A JP 17473689A JP H0340531 A JPH0340531 A JP H0340531A
Authority
JP
Japan
Prior art keywords
external temperature
optical output
output power
threshold current
semiconductor laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1174736A
Other languages
Japanese (ja)
Inventor
Shinichi Machida
真一 町田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP1174736A priority Critical patent/JPH0340531A/en
Publication of JPH0340531A publication Critical patent/JPH0340531A/en
Pending legal-status Critical Current

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  • Semiconductor Lasers (AREA)
  • Optical Communication System (AREA)

Abstract

PURPOSE:To improve response to a change in an external temperature by reading out threshold current data in accordance with the detected external temperature and impressing the read data to a semiconductor laser diode(LD). CONSTITUTION:When the external temperature is increased, the optical output power of the LD 3 is dropped and the voltage drop of a diode 41 is reduced. A storage device 43 outputs voltage corresponding to the input voltage of an input terminal 401 from a terminal 402 and impresses the output voltage to the base of a transistor 44, so that a DC bias current flowing into the LD 3 is the same as a threshold current against a change in the temperature and the optical output power of the LD 3 is held at a constant value. When the external temperature is lowered, the optical output power of the LD 3 is held at the constant value by the reverse operation. Thus, the response to a change in the external temperature can be improved.

Description

【発明の詳細な説明】 産業上の利用分野 本発明は光通信等に使用する光送信器に関する。[Detailed description of the invention] Industrial applications The present invention relates to an optical transmitter used for optical communications and the like.

従来の技術 一般に半導体レーザダイオード(以下LDという)は外
部温度”l 、”2 r T3の変化により、その光出
力りが第3図左方のように変化する。したがって、LD
に流す電流I(直流バイアス電流をIB、送信データの
パルス電流をI、とする)を−定とすれば光送信器の出
力P1〜P3は第3図に示すように温度の変化T1〜T
3により変動してしまう。そのため、LDにその光出力
の変化を制御する直流電流を流すことにより光出力を安
定なものとしている。
BACKGROUND OF THE INVENTION In general, the light output of a semiconductor laser diode (hereinafter referred to as LD) changes as shown in the left side of FIG. 3 due to changes in external temperature "l" and "2 r T3. Therefore, L.D.
If the current I (direct current bias current is IB, pulse current of the transmitted data is I) is - constant, the outputs P1 to P3 of the optical transmitter correspond to temperature changes T1 to T as shown in Figure 3.
3 will vary. Therefore, the optical output is stabilized by passing a direct current through the LD to control the change in the optical output.

次に、従来例を第2図に示す。1が入力デジタル信号で
、LD駆動回路2に入力される。LD駆動回路2は、L
D3に接続されている。5は、LD3の出力光を受けて
電気信号に変換するフォトダイオード(PD)である。
Next, a conventional example is shown in FIG. 1 is an input digital signal, which is input to the LD drive circuit 2. The LD drive circuit 2
Connected to D3. 5 is a photodiode (PD) that receives the output light of the LD 3 and converts it into an electrical signal.

6はPD5によりLD3に直流バイアス電流IBを流す
直流バイアス制御回路である。
Reference numeral 6 denotes a DC bias control circuit that causes a DC bias current IB to flow through the LD3 by the PD5.

続いて、上記従来例の動作について説明する。Next, the operation of the above conventional example will be explained.

第2図において、外部温度が上昇しLD3の光出力が低
下すると、LD3の光出力をモニタするPD5の電流が
減少する。それにより、直流バイアス制御回路6におい
て、差動増巾器61と帰還抵抗62によりトランジスタ
(TR)63のベース電立が上昇し、LD3に流れる直
流バイアス電流IBが大きくなり光出力パワーは一定と
なる。
In FIG. 2, when the external temperature rises and the optical output of LD3 decreases, the current of PD5 that monitors the optical output of LD3 decreases. As a result, in the DC bias control circuit 6, the base voltage of the transistor (TR) 63 is increased by the differential amplifier 61 and the feedback resistor 62, the DC bias current IB flowing to the LD 3 is increased, and the optical output power is kept constant. Become.

外部温度が下がった場合は、上記動作例と逆の動作によ
りLD3に流れる直流バイアス電流IBは少なくなる。
When the external temperature decreases, the DC bias current IB flowing through the LD3 decreases due to an operation opposite to the above operation example.

これによりLD3の光出力が低下し、光出力パワーは一
定となる。
As a result, the optical output of the LD 3 decreases, and the optical output power becomes constant.

このように、上記従来の光送信器でも外部温度の変化に
よらず光出力パワーを一定とすることができる。
In this way, even with the conventional optical transmitter described above, the optical output power can be kept constant regardless of changes in external temperature.

発明が解決しようとする課題 しかし、上記従来例の光送信器では、第2図に示したよ
うに、直流バイアス制御回路6が、負帰還をもった回路
構成になっているので、電源投入時に光出力パワーが一
定となる応答が遅いという問題点があった。
Problems to be Solved by the Invention However, in the conventional optical transmitter described above, as shown in FIG. 2, the DC bias control circuit 6 has a circuit configuration with negative feedback. There was a problem in that the response to keep the optical output power constant was slow.

本発明はこのような従来の問題点を解決するものであり
、外部温度の変動に対する応答を向上することができる
光送信器を提供することを目的とする。
The present invention solves these conventional problems, and aims to provide an optical transmitter that can improve response to changes in external temperature.

課題を解決するための手段 本発明は上記目的を達成するために、外部温度を検出す
る素子と、外部温度に応じた半導体レーザダイオードの
闇値電流データを予め記憶する手段を設け、検出された
外部温度に応じて閾値電流データを読み出し、半導体レ
ーザダイオードに印加するようにしたものである。
Means for Solving the Problems In order to achieve the above object, the present invention provides an element for detecting external temperature and a means for pre-storing dark value current data of a semiconductor laser diode according to the external temperature. The threshold current data is read out according to the external temperature and applied to the semiconductor laser diode.

作用 本発明は上記構成により、記憶手段から読み出された閾
値電流データが半導体半導体レーザダイオードに印加さ
れるので、従来例の負帰還回路に比べて応答か早くなり
、したがって外部温度の変動に対する応答を向上するこ
とができる。
Effect of the Invention According to the above configuration, the threshold current data read from the storage means is applied to the semiconductor laser diode, so the response is faster than that of the conventional negative feedback circuit, and therefore the response to external temperature fluctuations is faster. can be improved.

実施例 第1図は、本発明の一実施例の構成を示すものである。Example FIG. 1 shows the configuration of an embodiment of the present invention.

1が送信データである入力デジタル信号で、LD駆動回
路2に入力される。LD駆動回路2の出力側はLD3に
接続されている。直流バイアス制御回路4はLD3に直
流バイアス電流を流すように接続されている。直流バイ
アス制御回路4は、外部温度検出ダイオード41と、入
力端子401、出力端子402を有し、LD3が発光す
る閾値電流を記憶した装置43と、トランジスタ44と
抵抗42.45より構成される。ダイオード41には抵
抗42が接続されており、ダイオード41と抵抗42の
間は、記憶装置43の入力端子401に接続されている
。記憶装置43の出力端子402は直流バイアス電流供
給用のトランジスタ44のベースに接続され、トランジ
スタ44のエミッタには抵抗45が接続され、またコレ
クタにはLD3が接続されている。
The input digital signal 1 is transmission data and is input to the LD drive circuit 2. The output side of the LD drive circuit 2 is connected to the LD3. The DC bias control circuit 4 is connected to the LD 3 so that a DC bias current flows therethrough. The DC bias control circuit 4 has an external temperature detection diode 41, an input terminal 401, and an output terminal 402, and is composed of a device 43 storing a threshold current at which the LD 3 emits light, a transistor 44, and a resistor 42.45. A resistor 42 is connected to the diode 41, and a connection between the diode 41 and the resistor 42 is connected to an input terminal 401 of a storage device 43. An output terminal 402 of the memory device 43 is connected to the base of a transistor 44 for supplying DC bias current, a resistor 45 is connected to the emitter of the transistor 44, and an LD3 is connected to the collector.

尚、第3図に示すように、LD3は、温度T1゜T2.
T、に応じて閾値電流、すなわち発光する電流が異なり
、したがってこの各閾値電流に対応してトランジスタ4
4のベースに印加される電圧が予め記憶装置43に記憶
される。
Incidentally, as shown in FIG. 3, the LD3 is at a temperature of T1°T2.
The threshold current, that is, the current for emitting light, differs depending on T, and therefore, the transistor 4
The voltage applied to the base of 4 is stored in advance in the storage device 43.

次に、上記本発明の動作について説明する。第1図にお
いて、外部温度が上昇した場合、LD3の光出力パワー
が低下、ダイオード41の電圧降下が減る。これにより
記憶装置43は、上昇した入力端子401の電圧に応じ
た電圧を端子402より出力し、トランジスタ44のベ
ースに印加する。よって、LD3に流れる直流バイアス
電流は温度の変化に対し閾値電流と同じになり、LD3
の光出力パワーを一定に保つことができる。外部温度が
下降した場合は上記例の動作の反対の動作でLD3の光
出力パワーを一定に保つことができる。
Next, the operation of the present invention will be explained. In FIG. 1, when the external temperature rises, the optical output power of the LD 3 decreases and the voltage drop across the diode 41 decreases. As a result, the storage device 43 outputs a voltage corresponding to the increased voltage at the input terminal 401 from the terminal 402 and applies it to the base of the transistor 44 . Therefore, the DC bias current flowing through LD3 becomes the same as the threshold current with respect to temperature changes, and LD3
can keep the optical output power constant. When the external temperature drops, the optical output power of the LD 3 can be kept constant by performing an operation opposite to that of the above example.

従って、上記実施例によれば、ダイオード41の電圧降
下により外部温度の変動を検出し、この電圧降下に応じ
てトランジスタ44のベースの印加電圧を記憶装置43
から読み出すので、電源が投入された場合にもLD3の
光出力を短時間で一定にすることができる。
Therefore, according to the above embodiment, fluctuations in the external temperature are detected by the voltage drop across the diode 41, and the voltage applied to the base of the transistor 44 is adjusted to the memory device 43 in accordance with this voltage drop.
Since the light is read from the LD 3, the optical output of the LD 3 can be made constant in a short time even when the power is turned on.

発明の詳細 な説明したように、本発明は、外部温度に応じて半導体
レーザダイオードの閾値電流データを記憶装置から読み
出すので、従来例の負帰還回路に比べて応答が早くなる
As described in detail, the present invention reads the threshold current data of the semiconductor laser diode from the storage device according to the external temperature, so the response is faster than that of the conventional negative feedback circuit.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は、本発明の一実施例における光送信器の要部回
路図である。第2図は、従来の光送信器の要部回路図で
ある。第3図はLDの入力電流対光出力温度特性図であ
る。 l・・・入力デジタル信号、2・・・レーザダイオード
駆動回路、3・・・1/−ザダイオード、4・・・直流
バイアス制御回路、41・・・ダイオード、42・・・
抵抗、43・・・記憶装置。
FIG. 1 is a circuit diagram of a main part of an optical transmitter in an embodiment of the present invention. FIG. 2 is a circuit diagram of a main part of a conventional optical transmitter. FIG. 3 is a diagram showing the input current versus optical output temperature characteristic of the LD. l... Input digital signal, 2... Laser diode drive circuit, 3... 1/-the diode, 4... DC bias control circuit, 41... Diode, 42...
Resistance, 43... memory device.

Claims (1)

【特許請求の範囲】[Claims] 光信号を出力する半導体レーザダオードと、外部温度を
検出する温度検出素子と、外部温度に応じた前記半導体
レーザダイオードの閾値電流データを予め記憶し、前記
温度検出素子により検出された外部温度に応じて閾値電
流データを読み出し、前記半導体レーザダイオードに印
加する手段を有する光送信器。
A semiconductor laser diode that outputs an optical signal, a temperature detection element that detects an external temperature, threshold current data of the semiconductor laser diode according to the external temperature is stored in advance, and the threshold current data of the semiconductor laser diode is stored in advance according to the external temperature detected by the temperature detection element. An optical transmitter comprising means for reading threshold current data and applying it to the semiconductor laser diode.
JP1174736A 1989-07-06 1989-07-06 Optical transmitter Pending JPH0340531A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1174736A JPH0340531A (en) 1989-07-06 1989-07-06 Optical transmitter

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1174736A JPH0340531A (en) 1989-07-06 1989-07-06 Optical transmitter

Publications (1)

Publication Number Publication Date
JPH0340531A true JPH0340531A (en) 1991-02-21

Family

ID=15983772

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1174736A Pending JPH0340531A (en) 1989-07-06 1989-07-06 Optical transmitter

Country Status (1)

Country Link
JP (1) JPH0340531A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103856766A (en) * 2012-12-05 2014-06-11 罗伯特·博世有限公司 Method and device for operating a laser light source
CN104078841A (en) * 2014-07-08 2014-10-01 成都新易盛通信技术股份有限公司 Digital open loop temperature compensation system of optical module laser device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103856766A (en) * 2012-12-05 2014-06-11 罗伯特·博世有限公司 Method and device for operating a laser light source
CN104078841A (en) * 2014-07-08 2014-10-01 成都新易盛通信技术股份有限公司 Digital open loop temperature compensation system of optical module laser device

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