JPH0342344Y2 - - Google Patents
Info
- Publication number
- JPH0342344Y2 JPH0342344Y2 JP4092484U JP4092484U JPH0342344Y2 JP H0342344 Y2 JPH0342344 Y2 JP H0342344Y2 JP 4092484 U JP4092484 U JP 4092484U JP 4092484 U JP4092484 U JP 4092484U JP H0342344 Y2 JPH0342344 Y2 JP H0342344Y2
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- diaphragm body
- diaphragm
- stress
- alloy material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
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- Measuring Fluid Pressure (AREA)
Description
【考案の詳細な説明】
本考案は圧力変化を電気信号に変換して出力す
る金属ダイアフラム圧力センサに関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a metal diaphragm pressure sensor that converts pressure changes into electrical signals and outputs them.
従来のダイアフラム式の圧力センサには、ダイ
アフラムにセラミツクを用いたものと、Fe系又
はCu系の金属を用いたものがある。ダイアフラ
ムをセラミツクによつて形成したものは、セラミ
ツクが絶縁性及び耐熱性に優れているから、その
ダイアフラムの表面に抵抗ペーストを印刷、乾燥
及び850℃程度の温度による焼成をすることによ
つて付設して厚膜回路からなる応力センサを容易
に形成し得る特徴を有するが、反面セラミツクは
金属を用いたダイアフラムに比べて製造工程が複
雑で高価であるとともに材質が脆く機械的強度が
低い欠点がある。一方、ダイアフラムをFe系又
はCu系金属によつて形成したものは、機械的な
強度には優れているが、反面、高温で酸化し易い
欠点があり、セラミツクのような絶縁性を有しな
いから応力センサを付設する場合に予め絶縁膜を
形成する必要がある。 Conventional diaphragm pressure sensors include those that use ceramic for the diaphragm, and those that use Fe-based or Cu-based metals for the diaphragm. Diaphragms made of ceramic are attached by printing a resistance paste on the surface of the diaphragm, drying it, and firing it at a temperature of about 850℃, since ceramic has excellent insulation and heat resistance. However, compared to metal diaphragms, ceramics have the disadvantage that the manufacturing process is more complicated and expensive, and the material is brittle and has low mechanical strength. be. On the other hand, diaphragms made of Fe-based or Cu-based metals have excellent mechanical strength, but on the other hand, they have the disadvantage of being easily oxidized at high temperatures and do not have the insulating properties of ceramics. When attaching a stress sensor, it is necessary to form an insulating film in advance.
しかしながら、Fe系又はCu系金属のダイアフ
ラムは高温で酸化し易いから、絶縁膜は蒸着等の
比較的低温度で可能なコーテイングに限られ、耐
熱性が低いから、斯様な耐熱性の絶縁膜上に上述
のように高温度で焼成する厚膜回路からなる応力
センサを形成することは困難でああつた。 However, since Fe-based or Cu-based metal diaphragms are easily oxidized at high temperatures, insulating films are limited to coatings that can be applied at relatively low temperatures, such as vapor deposition. As mentioned above, it has been difficult to form a stress sensor consisting of a thick film circuit that is fired at a high temperature.
本考案は上記事情に鑑みてなされたものであ
り、その目的は、機械的強度に優れるとともに高
温での耐酸化性に優れ、表面に耐熱性に優れた絶
縁膜を形成することができて、高温処理の必要な
厚膜回路からなる応力センサを容易に付設し得る
金属ダイアフラム圧力センサを提供するにある。 The present invention was developed in view of the above circumstances, and its purpose is to form an insulating film with excellent mechanical strength and oxidation resistance at high temperatures, and with excellent heat resistance on the surface. It is an object of the present invention to provide a metal diaphragm pressure sensor to which a stress sensor consisting of a thick film circuit that requires high-temperature treatment can be easily attached.
以下本考案の一実施例について第1図乃至第3
図を参照しながら説明する。1はダイアフラム本
体で、これはFe−Cr−Al合金材(Fe:71%,
Cr:25%,Al:4%)からなる板材をプレスに
よつて絞り加工することによつて浅底の円形な容
器状に形成したものである。斯かる、ダイアフラ
ム本体1は、絞り加工後に、1160℃の大気中で50
分間の高温酸化処理を施すことにより、合金成分
中のAlを選択的に酸化して全表面部に約1μmの
厚さのアルミナ被膜からなる絶縁膜2が形成され
る。3〜6はダイアフラム本体1の上面側の中央
部及び外周部に位置させて絶縁膜2上に付設され
たピエゾレジステイブな厚膜抵抗からなる応力セ
ンサで、これらは酸化ルテニウム(RuO2)系の
抵抗材ペーストを印刷後、乾燥(150℃、10分
間)、焼成(850℃、10分間)の各工程を経て形成
される。7は各応力センサ3〜6間をブリツジ接
続する厚膜導体からなる印刷導体で、導体ペース
トの印刷、乾燥、焼成により応力センサ3〜6と
同時に形成される。そして、この印刷導体7の所
要部所に面積を拡大した電源端子部7a,7bと
出力端子部7c,7dが夫々形成されている。 The following is an example of the present invention shown in Figures 1 to 3.
This will be explained with reference to the figures. 1 is the diaphragm body, which is made of Fe-Cr-Al alloy material (Fe: 71%,
A plate material made of Cr: 25%, Al: 4%) was drawn using a press to form a circular container shape with a shallow bottom. After the drawing process, the diaphragm body 1 was heated at 50℃ in the atmosphere at 1160℃.
By performing high-temperature oxidation treatment for 1 minute, Al in the alloy components is selectively oxidized, and an insulating film 2 made of an alumina film with a thickness of about 1 μm is formed on the entire surface. 3 to 6 are stress sensors made of piezoresistive thick film resistors located on the insulating film 2 at the center and outer periphery of the upper surface of the diaphragm body 1, and these sensors are made of ruthenium oxide (RuO 2 ). After printing the resistive material paste, it is formed through the following steps: drying (150°C, 10 minutes) and firing (850°C, 10 minutes). A printed conductor 7 made of a thick film conductor bridge-connects the stress sensors 3 to 6, and is formed simultaneously with the stress sensors 3 to 6 by printing, drying, and baking a conductor paste. Further, power terminal portions 7a and 7b and output terminal portions 7c and 7d, each having an enlarged area, are formed at required locations on the printed conductor 7, respectively.
次に上記構成の作用について説明する。ダイア
フラム本体1の下面側に圧力Pが上向きに作用す
ると、圧力Pに比例して該ダイアフラム本体1の
中心部には引張応力が作用し、且つ外周部分には
圧縮応力が作用し、応力センサ3〜6に応力に応
じた抵抗値の変化が生じ、電源端子7a,7b間
に一定電圧を印加すると、応力センサ3〜6の抵
抗値変化に伴つた出力電圧が出力される。 Next, the operation of the above configuration will be explained. When pressure P acts upward on the lower surface side of the diaphragm body 1, tensile stress acts on the center of the diaphragm body 1 in proportion to the pressure P, and compressive stress acts on the outer circumference, causing the stress sensor 3 -6, a change in resistance value occurs in accordance with the stress, and when a constant voltage is applied between power supply terminals 7a, 7b, an output voltage is output in accordance with the change in resistance value of stress sensors 3-6.
上記構成によれば、ダイアフラム本体1が金属
材であるから、プレス加工によつて容易に所望の
形状にでき、セラミツク材料を用いたものに比べ
て加工が容易であるとともに脆さがなく機械的な
強度が非常に優れている。また、ダイアフラム本
体1はAlを含有するFe基合金で融点が1500℃以
上であり、絶縁膜2はダイアフラム本体1に含有
するAlを選択的に酸化して形成されたアルミナ
被膜であるから、絶縁膜2が従来構造のものに比
べて基材との密着性に優れ、且つ耐熱性に優れる
とともにダイアフラム本体1は表面のアルミナ被
膜により保護されて高温での耐酸化性にも優れ、
従つて応力センサ3〜6及び印刷導体7を高温度
(850℃)で焼成する厚膜回路により容易に付設し
得る。 According to the above configuration, since the diaphragm body 1 is made of a metal material, it can be easily formed into a desired shape by press working, and is easier to process than a diaphragm body 1 made of ceramic material, and is less brittle and mechanically Excellent strength. In addition, the diaphragm body 1 is made of an Fe-based alloy containing Al and has a melting point of 1500°C or higher, and the insulating film 2 is an alumina coating formed by selectively oxidizing Al contained in the diaphragm body 1. The membrane 2 has excellent adhesion to the base material and heat resistance compared to conventional structures, and the diaphragm body 1 is protected by the alumina coating on the surface and has excellent oxidation resistance at high temperatures.
Therefore, the stress sensors 3 to 6 and the printed conductor 7 can be easily attached using a thick film circuit fired at a high temperature (850 DEG C.).
尚、ダイアフラム本体1は、上述したFe−Cr
−Al合金材の他にFe−Al合金材、Fe−Ni−Cr−
Al合金材、Ni−Cr−Al合金材等を用いることが
でき、アルミナ被膜からなる絶縁膜2は高温酸化
処理の代りに陽極酸化処理によつて形成すること
ができ、また、応力センサ3〜6は厚膜回路の他
に薄膜回路及び半導体センサにより形成すること
ができる。 The diaphragm body 1 is made of Fe-Cr as described above.
-In addition to Al alloy material, Fe-Al alloy material, Fe-Ni-Cr-
An Al alloy material, a Ni-Cr-Al alloy material, etc. can be used, and the insulating film 2 made of an alumina film can be formed by anodic oxidation treatment instead of high-temperature oxidation treatment. 6 can be formed by a thin film circuit and a semiconductor sensor in addition to a thick film circuit.
第4図は本考案の他の実施例を示すものであ
り、第1図乃至第3図と異なる部分について説明
する。即ち、8は絶縁膜2の表面に850℃焼成の
誘電体ペーストを印刷、乾燥、焼成の各工程を経
てコーテイングされた絶縁材被膜で、これはアル
ミナ被膜からなる絶縁膜2の絶縁性及び表面粗さ
向上並びに各応力センサ3〜6との密着性向上を
目的としてなされ、この絶縁材被膜8の表面に応
力センサ3〜6及び印刷導体7が形成される。 FIG. 4 shows another embodiment of the present invention, and parts different from those in FIGS. 1 to 3 will be explained. That is, 8 is an insulating material coating coated on the surface of the insulating film 2 by printing, drying, and baking a dielectric paste fired at 850°C. This is done for the purpose of improving roughness and adhesion with each stress sensor 3 to 6, and the stress sensors 3 to 6 and printed conductor 7 are formed on the surface of this insulating material coating 8.
本考案は以上の説明から明らかなように、機械
的強度に優れるとともに高温での耐酸化性に優
れ、表面に耐熱性に優れた絶縁膜を形成すること
ができて、高温処理の必要な厚膜回路からなる応
力センサを容易に付設し得る金属ダイアフラム圧
力センサを提供できる。 As is clear from the above description, the present invention has excellent mechanical strength and oxidation resistance at high temperatures, and can form an insulating film with excellent heat resistance on the surface, making it possible to reduce the thickness required for high temperature treatment. A metal diaphragm pressure sensor to which a stress sensor made of a membrane circuit can be easily attached can be provided.
第1図乃至第3図は本考案の一実施例を示すも
のであり、第1図は上面図、第2図は縦断面図、
第3図は要部の拡大断面図、第4図は本考案の他
の実施例を示す第3図相当図である。
図面中、1はダイアフラム本体、2は絶縁膜、
3〜6は応力センサ、7は印刷導体、8は絶縁材
皮膜である。
1 to 3 show an embodiment of the present invention, in which FIG. 1 is a top view, FIG. 2 is a vertical sectional view,
FIG. 3 is an enlarged sectional view of the main part, and FIG. 4 is a view corresponding to FIG. 3 showing another embodiment of the present invention. In the drawing, 1 is a diaphragm body, 2 is an insulating film,
3 to 6 are stress sensors, 7 is a printed conductor, and 8 is an insulating film.
Claims (1)
プレス加工により所定形状に形成してなるダイ
アフラム本体と、このダイアフラム本体に含有
されたAlを選択的に酸化することにより前記
ダイアフラム本体の表面部に形成されるアルミ
ナ被膜からなる絶縁膜と、この絶縁膜に一体的
に付設される応力センサとを具備してなる金属
ダイアフラム圧力センサ。 2 アルミナ被膜からなる絶縁膜と応力センサと
の間に絶縁材被膜を一体的に介在することを特
徴とする実用新案登録請求の範囲第1項に記載
の金属ダイアフラム圧力センサ。[Claims for Utility Model Registration] 1. A diaphragm body formed by pressing an Al-containing Fe-based alloy material or Ni-based alloy material into a predetermined shape, and selectively oxidizing the Al contained in the diaphragm body. A metal diaphragm pressure sensor comprising: an insulating film made of an alumina film formed on the surface of the diaphragm body; and a stress sensor integrally attached to the insulating film. 2. The metal diaphragm pressure sensor according to claim 1, which is a registered utility model, characterized in that an insulating film is integrally interposed between the insulating film made of an alumina film and the stress sensor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4092484U JPS60152950U (en) | 1984-03-21 | 1984-03-21 | metal diaphragm pressure sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4092484U JPS60152950U (en) | 1984-03-21 | 1984-03-21 | metal diaphragm pressure sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60152950U JPS60152950U (en) | 1985-10-11 |
| JPH0342344Y2 true JPH0342344Y2 (en) | 1991-09-05 |
Family
ID=30550272
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4092484U Granted JPS60152950U (en) | 1984-03-21 | 1984-03-21 | metal diaphragm pressure sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60152950U (en) |
-
1984
- 1984-03-21 JP JP4092484U patent/JPS60152950U/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60152950U (en) | 1985-10-11 |
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