JPH0342506B2 - - Google Patents
Info
- Publication number
- JPH0342506B2 JPH0342506B2 JP58144666A JP14466683A JPH0342506B2 JP H0342506 B2 JPH0342506 B2 JP H0342506B2 JP 58144666 A JP58144666 A JP 58144666A JP 14466683 A JP14466683 A JP 14466683A JP H0342506 B2 JPH0342506 B2 JP H0342506B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- resin
- water
- stage
- semiconductor wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P54/00—Cutting or separating of wafers, substrates or parts of devices
Landscapes
- Dicing (AREA)
Description
【発明の詳細な説明】
(発明の技術分野)
本発明は半導体ウエハから効率良く半導体チツ
プを得るための半導体チツプの製作方法に関す
る。DETAILED DESCRIPTION OF THE INVENTION (Technical Field of the Invention) The present invention relates to a semiconductor chip manufacturing method for efficiently obtaining semiconductor chips from a semiconductor wafer.
(従来技術の説明)
先ず、従来の半導体チツプの完全切断方法と、
ダイスボンデイング用Bステージ硬化タイプの導
電性樹脂の供給方法につき、第1図及び第2図a
及びbに沿つて説明する。(Description of prior art) First, a conventional method for completely cutting a semiconductor chip,
Figures 1 and 2a show how to supply B-stage curing type conductive resin for die bonding.
and b.
この第1図は断面図であり、先ず、半導体ウエ
ハを支持板に固定するため支持板13(例えばシ
リコンウエハ)を加熱し、接着剤12(例えばワ
ツクス)を溶かして半導体ウエハを支持板13に
固着させる。 This FIG. 1 is a cross-sectional view. First, in order to fix the semiconductor wafer to the support plate, the support plate 13 (for example, a silicon wafer) is heated, the adhesive 12 (for example, wax) is melted, and the semiconductor wafer is fixed to the support plate 13. Make it stick.
次に、これをダイシングソーを用い、切り込み
深さが支持板13に届くまで入れて完全切断を行
い、その後再び支持板13を加熱して接着剤12
を溶融させて分割したチツプ11を支持板13か
ら分離させる。次に、この半導体チツプ11に付
着した接着剤12を洗浄するために、半導体チツ
プ11を有機溶媒(例えばトリクレン)でボイリ
ング洗浄を行う。次に、第2図a(平面図)及び
第2図b(第2図の側面図)に示すように、完全
に分割した半導体チツプ21をトレイ22の中に
並べてスクリーン印刷手段でBステージタイプ樹
脂を半導体チツプ21の裏面に供給し、100℃×
30分の加熱処理を施してダイスボンド樹脂の仮硬
化を完了させ、よつて、半導体チツプ21をダイ
スボンデイング工程へ進めることができる。 Next, using a dicing saw, make a complete cut by making a cut until the depth reaches the support plate 13, and then heat the support plate 13 again and use the adhesive 12.
The divided chips 11 are separated from the support plate 13 by melting. Next, in order to clean the adhesive 12 adhering to the semiconductor chip 11, the semiconductor chip 11 is subjected to boiling cleaning using an organic solvent (for example, trichlene). Next, as shown in FIG. 2a (top view) and FIG. 2b (side view in FIG. 2), the completely divided semiconductor chips 21 are arranged in a tray 22 and printed on a B-stage by screen printing means. The resin is supplied to the back side of the semiconductor chip 21 and heated to 100°C.
Heat treatment is performed for 30 minutes to complete temporary curing of the die bonding resin, and the semiconductor chip 21 can then proceed to the die bonding process.
このように、従来の方法では、ウエハから半導
体チツプに完全に切断してから個別に半導体チツ
プに樹脂を印刷供給するため、1切断後のチツプ
の取外し、2洗浄、3樹脂の印刷の各々の際に、
バラバラになつた半導体チツプを取り扱うことと
なり、これがため、ハンドリング性が悪くかつ工
数がかかり、製作効率が悪いという欠点があつ
た。 In this way, in the conventional method, the semiconductor chips are completely cut from the wafer and then the resin is printed and supplied to the semiconductor chips individually. Occasionally,
This had the disadvantage of having to handle broken semiconductor chips, which resulted in poor handling, increased man-hours, and poor manufacturing efficiency.
また、ウエハ段階でBステージタイプ樹脂を印
刷供給し、100℃×30分の加熱処理を施してBス
テージ化した後、ワツクスを介して支持板に接着
し、次いで、ダイシングソーで半導体ウエハに切
り込みを行つたのちに加熱して支持板からウエハ
をはずし、然る後、有機溶媒でボイリングして接
着剤の洗浄を行つているため、Bステージが加熱
剤に溶解されるというダメージを受け、ダイスボ
ンデイングが不可能となる欠点があつた。 In addition, at the wafer stage, B-stage type resin is printed and supplied, heat-treated at 100°C for 30 minutes to form a B-stage, and then bonded to a support plate via wax, and then cut into the semiconductor wafer with a dicing saw. After that, the wafer is heated to remove it from the support plate, and then boiled with an organic solvent to clean the adhesive, which causes the B stage to be damaged by being dissolved in the heating agent, resulting in the die being damaged. There was a drawback that bonding was impossible.
(発明の目的)
本発明はこのような従来方法の欠点を除去する
ために成されたもので、従つて本発明の目的は効
率良くかつ高精度でBステージ硬化樹脂付き半導
体チツプを製作できる方法を提供するにある。(Objective of the Invention) The present invention has been made to eliminate the drawbacks of such conventional methods, and therefore, the purpose of the present invention is to provide a method that can efficiently and precisely manufacture semiconductor chips with B-stage cured resin. is to provide.
(発明の構成)
この目的の達成を図るため、本発明の半導体チ
ツプの作成方法によれば、半導体ウエハの裏面に
Bステージ硬化タイプの樹脂を塗布してこれを加
熱硬化した後、この硬化樹脂上に水溶性接着剤を
塗布して2層にし、この水溶性接着剤を介して半
導体ウエハをベース基板に固着し、然るのち少な
くともこの半導体ウエハ及び硬化樹脂に対し半導
体チツプに分割するための切り込みを入れ、次
に、このベース基板とこれに固着されている半導
体ウエハとの全体を水中に入れてBステージ硬化
樹脂付き半導体チツプをベース基板から分離さて
所定の個別の半導体チツプに分割することを特徴
とする。(Structure of the Invention) In order to achieve this object, according to the method of manufacturing a semiconductor chip of the present invention, a B-stage curing type resin is applied to the back surface of a semiconductor wafer, and after the resin is heated and cured, the cured resin is A water-soluble adhesive is applied on top to form two layers, the semiconductor wafer is fixed to the base substrate via this water-soluble adhesive, and then at least the semiconductor wafer and the cured resin are used to divide into semiconductor chips. A cut is made, and then the entire base substrate and the semiconductor wafer fixed thereto are placed in water to separate the B-stage cured resin-coated semiconductor chip from the base substrate and divide it into predetermined individual semiconductor chips. It is characterized by
(実施例の説明)
以下、第3図a〜e基づいて本発明の実施例に
つき説明する。第3図a〜eは本発明の方法を説
明するための製作工程図であつて、夫々各製作段
階での状態を断面図で示してあるが、本発明が理
解できる程度に概略的に示してあるにすぎない。(Description of Embodiments) Hereinafter, embodiments of the present invention will be described based on FIGS. 3a to 3e. Figures 3a to 3e are manufacturing process diagrams for explaining the method of the present invention, and each shows the state at each manufacturing stage in cross-sectional view, but is schematically shown to the extent that the present invention can be understood. It's just that.
先ず、第1図aに示すように、半導体ウエハ3
1の裏面にBステージ硬化タイプの樹脂32を印
刷塗布した後これを、例えば、約100℃の温度で
約30分間加熱処理して仮硬化される。次に、第2
図bに示すように、この硬化樹脂上に水溶性接着
剤33を塗布して硬化樹脂と接着剤33との2層
とし、この水溶性接着剤33を介して半導体ウエ
ハの樹脂32側をベース基板34、例えば、シリ
コンウエハに接着し、例えば、約80℃の温度で約
30分間加熱処理して固定する。 First, as shown in FIG. 1a, a semiconductor wafer 3 is
After a B-stage curing type resin 32 is printed and coated on the back surface of 1, it is temporarily cured by heat treatment at a temperature of about 100° C. for about 30 minutes, for example. Next, the second
As shown in Figure b, a water-soluble adhesive 33 is applied onto this cured resin to form two layers of the cured resin and adhesive 33, and the resin 32 side of the semiconductor wafer is attached to the base via this water-soluble adhesive 33. Adhere to a substrate 34, e.g., a silicon wafer, e.g., at a temperature of about 80°C.
Fix by heating for 30 minutes.
次に、第3図cに示すように、ダイシングソー
で半導体ウエハ31、Bステージ硬化樹脂32及
び水溶性接着剤33に半導体チツプ35に分割す
るための切り込み36を入れ、これらを完全に切
断する(全切りすること)。この段階では各半導
体チツプ35は未だベース基板34に固定されて
いる。 Next, as shown in FIG. 3c, cuts 36 are made in the semiconductor wafer 31, B-stage cured resin 32, and water-soluble adhesive 33 to separate them into semiconductor chips 35 using a dicing saw, and these are completely cut. (Cut completely). At this stage, each semiconductor chip 35 is still fixed to the base substrate 34.
次に、この状態の半導体ウエハ31及びベース
基板34の組立全体を、第3図dに示すように、
容器37中の水38、例えば、純水中に浸漬し
て、例えば、約12〜24時間に亘つて放置する。 Next, the entire assembly of the semiconductor wafer 31 and the base substrate 34 in this state is as shown in FIG. 3d.
It is immersed in water 38, for example pure water, in a container 37 and left for about 12 to 24 hours, for example.
このようにすれば、第3図eに示すように、B
ステージ硬化樹脂付きの個別の半導体チツプ35
が得られる。 In this way, as shown in Figure 3e, B
Individual semiconductor chips 35 with stage cured resin
is obtained.
(発明の効果)
上述したところから明らかなように、本発明に
よる半導体チツプの製作方法によれば、半導体ウ
エハの裏面にBステージ硬化タイプ樹脂を塗布し
てこれを加熱硬化させ、次いで、これを水溶性接
着剤を介してベース基板に固定し、然る後、半導
体チツプに分割するため少なくとも半導体ウエハ
及び硬化樹脂に切り込みを入れてこれを水中に入
れ、よつて、個別の半導体チツプに分割するよう
に成したのであるから、チツプに対するBステー
ジ硬化タイプ導電性樹脂の供給をウエハレベルで
行え、これがため、従来のチツプ単位の作業に比
べてハンドリング性が極めて良くなると共に各作
業工数の大幅な削減が計れ、従つて、半導体チツ
プの製作効率が著しく向上するという利点があ
る。(Effects of the Invention) As is clear from the above, according to the method of manufacturing a semiconductor chip according to the present invention, a B-stage curing type resin is applied to the back surface of a semiconductor wafer and cured by heating. It is fixed to a base substrate via a water-soluble adhesive, and then, in order to divide into semiconductor chips, at least the semiconductor wafer and the cured resin are cut and placed in water, and then divided into individual semiconductor chips. As a result, the B-stage hardening type conductive resin can be supplied to the chips at the wafer level, which greatly improves handling compared to conventional chip-by-chip work, and significantly reduces the number of man-hours required for each work. This has the advantage that the manufacturing efficiency of semiconductor chips can be significantly improved.
また、本説明では、接着剤の塗布および溶解
は、それぞれ1回の作業で済むという利点があ
る。 In addition, in this description, there is an advantage that applying and dissolving the adhesive only need to be done in one operation.
また、チツプとベース基板との固着を水溶性接
着剤を用いて行つているので、従来のような有機
溶媒を用いたボイリングによらずして、水中でチ
ツプの分離が行え、これがため、Bステージ硬化
樹脂への電気的影響は全くなくしかもこの樹脂が
溶解したりしてチツプがダメージを受る恐れが無
いという利点がある。 In addition, since the chips and the base substrate are fixed using a water-soluble adhesive, the chips can be separated in water without boiling using conventional organic solvents. There is an advantage that there is no electrical influence on the stage-cured resin, and there is no risk of the resin melting or damaging the chip.
また、本発明によれば、高精度なダイシングが
可能となり、また、半導体チツプ形成後のダイス
ボンデイングの作業工程に対するチツプ取り扱い
作業も簡単かつ容易となる。 Further, according to the present invention, highly accurate dicing becomes possible, and the chip handling operation for the die bonding process after semiconductor chip formation becomes simple and easy.
本発明はこのような利点を有するので、高精度
なマルチツプモジルールの組立に広く利用するこ
とが出来る。 Since the present invention has such advantages, it can be widely used for assembling highly accurate multi-module rules.
第1図及び第2図a及びbは従来の半導体チツ
プの製作方法を説明するための線図、第3図a〜
eは本発明の半導体チツプの製作方法に一実施例
を説明するための製作工程図である。
31……半導体ウエハ、32……Bステージ硬
化タイプ樹脂、33……水溶性接着剤、34……
ベース基板、35……半導体チツプ、36……切
り込み、37……容器、38……水。
FIGS. 1 and 2 a and b are diagrams for explaining a conventional semiconductor chip manufacturing method, and FIGS. 3 a to 3
FIG. 3e is a manufacturing process diagram for explaining one embodiment of the semiconductor chip manufacturing method of the present invention. 31... Semiconductor wafer, 32... B stage curing type resin, 33... Water-soluble adhesive, 34...
Base substrate, 35...semiconductor chip, 36...notch, 37...container, 38...water.
Claims (1)
の樹脂を塗布し、該樹脂を加熱硬化した後この硬
化樹脂上に水溶性接着剤を塗布して2層にし、こ
の水溶性接着剤を介して半導体ウエハをベース基
板に固着し、然るのち少なくとも前記半導体ウエ
ハ及び前記硬化樹脂を半導体チツプに分割するた
めの切り込みを入れ、次に、前記ベース基板とこ
れに固着されている半導体ウエハとの全体を水中
に入れてBステージ硬化樹脂付き半導体チツプを
前記ベース基板から分解させることを特徴とする
半導体チツプの製作方法。1. Apply a B-stage curing type resin to the back side of the semiconductor wafer, heat and cure the resin, then apply a water-soluble adhesive on the cured resin to form two layers, and bond the semiconductor wafer through the water-soluble adhesive. is fixed to a base substrate, then cuts are made to divide at least the semiconductor wafer and the cured resin into semiconductor chips, and then the entire base substrate and the semiconductor wafer fixed thereto are soaked in water. 1. A method for manufacturing a semiconductor chip, characterized in that the semiconductor chip with a B-stage cured resin is disassembled from the base substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58144666A JPS6035531A (en) | 1983-08-06 | 1983-08-06 | Manufacture of semiconductor chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58144666A JPS6035531A (en) | 1983-08-06 | 1983-08-06 | Manufacture of semiconductor chip |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6035531A JPS6035531A (en) | 1985-02-23 |
| JPH0342506B2 true JPH0342506B2 (en) | 1991-06-27 |
Family
ID=15367401
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58144666A Granted JPS6035531A (en) | 1983-08-06 | 1983-08-06 | Manufacture of semiconductor chip |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6035531A (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05291398A (en) * | 1992-04-08 | 1993-11-05 | Sony Corp | Element substrate and liquid crystal display device manufacturing method |
| KR970000751B1 (en) * | 1994-07-14 | 1997-01-18 | 한국기계연구원 | Rotatable shrouded valve for improving a scavenging of 2-stroke engine |
| JP3521099B2 (en) | 1994-11-29 | 2004-04-19 | リンテック株式会社 | Adhesive sheet for preventing adhesion of adhesive to dicing ring frame and wafer processing sheet provided with the adhesive sheet |
| SE516254C2 (en) * | 2000-04-26 | 2001-12-10 | Ericsson Telefon Ab L M | Method of forming a conductive layer on a semiconductor device |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4917965A (en) * | 1972-06-07 | 1974-02-16 |
-
1983
- 1983-08-06 JP JP58144666A patent/JPS6035531A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6035531A (en) | 1985-02-23 |
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