JPH034541A - Manufacture of semiconductor device - Google Patents

Abstract

PURPOSE:To prevent the generation of static electricity and to prevent the electrostatic breakdown of semiconductor elements by a method wherein an antistatic material is provided on the inner surface of a vacuum bag. CONSTITUTION:An insulative resin 15 is applied on parts, on which semiconductor elements 13 are fixed, of a wiring board 11 including a conductor wiring 12. Then, bump electrodes 14 of the elements 13 are made to coincide with the wiring 12 and the elements 13 are pressed to the board 11 by a pressing body 16. At this time, the resin 15 on the wiring 12 is pushed out on the peripheries of the elements 13, the resin on the peripheral edge parts of the elements 13 is hardened by irradiating ultraviolet light 17 from above and the elements 13 are temporarily fixed on the board 11. Thereby, the board 11 with a plurality of pieces of the elements 13 fixed temporarily thereon is put in a vacuum bag 18 with an antistatic layer 19, which is provided with an antistatic function and is applied on the inner side of the bag 18, and is vacuum-packaged. This vacuum packaging is heated, the whole resin 15 is hardened and the electrical connection between the electrodes 14 and the wiring 12 and the mechanical maintenance of the elements 13 are completed by the adhesive force of the resin 15.

Description

DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a method for manufacturing semiconductor devices used in various electronic devices.

Conventional technology The conventional technique will be explained with reference to FIGS. 2(a) to 2(c).

First, as shown in Figure 2 (2L), seven pink, glass.

An insulating resin 5 is applied to a surface of a wiring board 1 made of glass epoxy or the like having conductor wiring 2. Conductor wiring 2 is Cr
- Insulating resin 5 is thermosetting or ultraviolet curing epoxy.

Silicone, acrylic, etc. Next, as shown in FIG. 2(b), the protruding electrodes 4 of the semiconductor element 3 and the conductor wiring 2 are aligned, the semiconductor element 3 is pressurized with the pressurizing body 6, and the wiring board 1 is
press against. The protruding electrode 4 is MuE.

Mu, Cu, etc. At this time, the insulating resin 6 on the conductor wiring 2 is pushed out to the periphery, and the protruding electrode 4 of the semiconductor element 3
and the conductor wiring 2 are in electrical contact with each other. Next, by irradiating ultraviolet rays 7 from above while the semiconductor element 3 is pressurized, the insulating resin 6 around the semiconductor element 3 is cured and temporarily fixed. As shown in FIG. 2(C), the wiring board 1 on which a plurality of semiconductor elements 3 are temporarily fixed by the above method is placed in a vacuum bag 8 made of nylon, polypropylene, etc., vacuum-packed, and a plurality of semiconductor elements 3 are temporarily fixed. Uniform atmospheric pressure is applied to all semiconductor elements 3. By heating the insulating resin 5 in this state, the entire insulating resin 5 is cured, and the semiconductor element 3 is
The electrical connection between the protruding electrode 4 and the conductor wiring 2 and the mechanical holding of the semiconductor element 3 are completed. Note that it is also possible to place the product in a pressure container or the like after vacuum packaging and apply pressure above or below atmospheric pressure.

Problems to be Solved by the Invention As described above, in the conventional technology, the semiconductor element 3 and the vacuum bag 8
Since they are in direct contact with each other, the semiconductor element 3 may be damaged by static electricity generated when the semiconductor element 3 is removed from the vacuum bag 8.

Means for Solving the Problems According to the present invention, an antistatic body is provided on the inner surface of a vacuum bag.

Effect: The above method prevents static electricity generated when a semiconductor element is removed from a vacuum bag, thereby preventing electrostatic damage to the semiconductor element.

Example An embodiment of the present invention will be described with reference to FIG.

First, as shown in Figure 1 (2L), ceramic and glass.

An insulating resin 15 made of epoxy, silicone, acrylic, etc. is applied to the portion of the wiring board 11 made of epoxy or the like to which the semiconductor element 13 is fixed, including on the conductor wiring 12.
・, 1 conductor wiring 12 is Cr A u , Aa l1t
It consists of o, etc.

Next, as shown in FIG. 1('b), the protruding electrode 14 of the semiconductor element 13 and the conductor wiring 12 are aligned, and the semiconductor element 13 is
is applied to the wiring board 11 by a pressure 16. The protruding electrode 14 is made of JJ, Au, Cu, or the like. At this time, the insulating resin 15 on the conductor wiring board 2 is pushed out to the periphery, and by irradiating ultraviolet rays 17 from above, the insulating resin 15 at the peripheral edge of the semiconductor element 13 is hardened and temporarily fixed. Wiring board 1 on which a plurality of semiconductor elements 13 have been temporarily fixed by the above method
1 into a vacuum bag 18 coated with an antistatic layer 19 having an antistatic function on the inside, as shown in FIG. 1(C).
Vacuum package. By heating in this state,
The entire insulating resin 15 is cured, and its adhesive strength completes the electrical connection between the protruding electrodes 14 of the semiconductor element 13 and the conductor wiring 12, and the mechanical holding of the semiconductor element 13. When taking out from the vacuum bag 18,
There is no generation of static electricity, and the semiconductor element 13 is prevented from being damaged by static electricity.

Effect of the invention The effects of the present invention are shown below.

That is, according to the present invention, static electricity is not generated when a semiconductor element is removed from a vacuum bag, so that electrostatic damage to the semiconductor element can be prevented.

[Brief explanation of the drawing]

FIGS. 1(a) to (C) are cross-sectional views of each process showing an embodiment of the method for manufacturing a semiconductor device of the present invention, and FIGS. 2(2L) to
(C) is a cross-sectional view of each process showing a conventional technique. 11... Wiring board, 12... Conductor wiring, 13... Semiconductor element, 14... Projection electrode, 15... Insulating resin , 16...
Pressure body, 17... Ultraviolet rays, 18... Vacuum bag, 19... Antistatic layer.

Claims (1)

[Claims] A semiconductor element was bonded with an insulating resin onto a wiring board having conductor wiring, and the semiconductor element and wiring board were placed in a vacuum bag with an antistatic material on the inside, and the semiconductor element and wiring board were pressurized using air pressure. A method for manufacturing a semiconductor device, comprising curing the insulating resin in a state in which the insulating resin is cured.