JPH0345547B2 - - Google Patents

Info

Publication number
JPH0345547B2
JPH0345547B2 JP57185109A JP18510982A JPH0345547B2 JP H0345547 B2 JPH0345547 B2 JP H0345547B2 JP 57185109 A JP57185109 A JP 57185109A JP 18510982 A JP18510982 A JP 18510982A JP H0345547 B2 JPH0345547 B2 JP H0345547B2
Authority
JP
Japan
Prior art keywords
resistance
input
layer
region
polysilicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57185109A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5974665A (ja
Inventor
Isao Baba
Takeo Kondo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP57185109A priority Critical patent/JPS5974665A/ja
Publication of JPS5974665A publication Critical patent/JPS5974665A/ja
Publication of JPH0345547B2 publication Critical patent/JPH0345547B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/611—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using diodes as protective elements

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP57185109A 1982-10-21 1982-10-21 入力保護回路 Granted JPS5974665A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57185109A JPS5974665A (ja) 1982-10-21 1982-10-21 入力保護回路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57185109A JPS5974665A (ja) 1982-10-21 1982-10-21 入力保護回路

Publications (2)

Publication Number Publication Date
JPS5974665A JPS5974665A (ja) 1984-04-27
JPH0345547B2 true JPH0345547B2 (fr) 1991-07-11

Family

ID=16165010

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57185109A Granted JPS5974665A (ja) 1982-10-21 1982-10-21 入力保護回路

Country Status (1)

Country Link
JP (1) JPS5974665A (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61263254A (ja) * 1985-05-17 1986-11-21 Nec Corp 入力保護装置
JP2664911B2 (ja) * 1987-10-27 1997-10-22 日本電気アイシーマイコンシステム株式会社 半導体装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54101283A (en) * 1978-01-27 1979-08-09 Hitachi Ltd Gate protective device

Also Published As

Publication number Publication date
JPS5974665A (ja) 1984-04-27

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