JPH0346221A - Charged particle beam exposure device - Google Patents

Charged particle beam exposure device

Info

Publication number
JPH0346221A
JPH0346221A JP1183085A JP18308589A JPH0346221A JP H0346221 A JPH0346221 A JP H0346221A JP 1183085 A JP1183085 A JP 1183085A JP 18308589 A JP18308589 A JP 18308589A JP H0346221 A JPH0346221 A JP H0346221A
Authority
JP
Japan
Prior art keywords
lens barrel
gas
electrodes
charged particle
pair
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1183085A
Other languages
Japanese (ja)
Inventor
Juichi Sakamoto
坂本 樹一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP1183085A priority Critical patent/JPH0346221A/en
Publication of JPH0346221A publication Critical patent/JPH0346221A/en
Pending legal-status Critical Current

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  • Electron Beam Exposure (AREA)

Abstract

PURPOSE:To remove an adhered matter by reacting it with the adhered matter located on the inner wall of a lens barrel by a method wherein, after the cleaning gas introduced from a gas introducing part has been brought into a plasmic state between a pair of electrodes, the plasmic gas in introduced into the lens barrel of a charged particle beam exposure device. CONSTITUTION:Oxygen-containing gas is fed from outside through a flexible cylindrical tube 23, and on the other hane, the inside pressure of 0.01Torr is maintained by evacuating a lens barrel through a discharge hole 20. Also, the power of 50W having the frequency of 500kHz is applied to a pair of electrodes 22a and 22b, electricity is discharged, and the gas introduced into a lens barrel 15 from a gas lead-out part 21c is brought into a plasmic state. At this time, the ions in the plasma are concentrated along the line of magnetic force located in the vicinity of the magnet 22c attached to the tip of the electrode 22a. As a result, the adhered matter on the surface of the inner wall of the lens barrel 15 can be removed without directly giving damage to the inner surface by the bombardment of ions.

Description

【発明の詳細な説明】 〔概 要〕 荷電粒子ビーム露光装置に関し、 鏡筒に損傷を与えることなく鏡筒内壁の付着物を除去す
ることを目的とし、 ガス導入部、ガス導通部及びガス導出部を備えた円筒と
、該ガス導出部の先端に配置された一対の電極と、該一
対の電極への電力供給装置とからなり、該ガス導入部か
ら導入され該ガス導通部を通って該ガス導出部から導出
されたクリーニングガスを該一対の電極間でプラズマ化
した後荷電粒子ビーム露光装置の鏡筒内に送り込み該鏡
筒内壁の付着物と反応させて該付着物を除去するように
したクリーニング用治具を有する荷電粒子ビーム露光装
置であって、該一対の電極の一方又は双方の電極に磁石
を設けるように構成する。
[Detailed Description of the Invention] [Summary] This invention relates to a charged particle beam exposure device, and aims to remove deposits on the inner wall of the lens barrel without damaging the lens barrel, and includes a gas introduction part, a gas conduction part, and a gas outlet. The gas is introduced from the gas introduction part and passes through the gas conduction part. After the cleaning gas led out from the gas outlet is turned into plasma between the pair of electrodes, it is sent into the lens barrel of the charged particle beam exposure device and reacts with deposits on the inner wall of the lens barrel to remove the deposits. A charged particle beam exposure apparatus includes a cleaning jig, and is configured such that a magnet is provided on one or both of the pair of electrodes.

〔産業上の利用分野〕[Industrial application field]

本発明は荷電粒子ビーム露光装置クリーニング用治具に
関する。
The present invention relates to a jig for cleaning a charged particle beam exposure apparatus.

近年、ICの高速・高密度化に伴い、従来のフォトリソ
グラフィに代わって荷電粒子ビームを用いた露光法例え
ば電子ビーム露光法が回路パターンの形成に用いられる
ようになった。この方法によればレチクルやマスクを作
成する必要がな(、計算機処理されたパターン設計デー
タによって直接電子ビームを制御してパターンを形成す
ることができるためターンアラウンドが早く^SIC等
の少量多品種のICの生産に適している。しかしながら
この方法によって実際にサブミクロンオーダーの微細な
パターンを正確な位置に露光するためには経時変化の少
ない安定した電子ビームを得ることが必要である。
In recent years, as ICs have become faster and more dense, exposure methods using charged particle beams, such as electron beam exposure methods, have come to be used in place of conventional photolithography to form circuit patterns. With this method, there is no need to create a reticle or mask (and the pattern can be formed by directly controlling the electron beam using computer-processed pattern design data, so the turnaround is fast. However, in order to actually expose a fine pattern on the order of submicrons at an accurate position using this method, it is necessary to obtain a stable electron beam with little change over time.

〔従来の技術〕[Conventional technology]

第3図は電子ビーム露光装置の要部断面図を示したもの
である。同図において、電子銃11から出射した電子ビ
ーム12はレンズ系13、偏向系14等の収められてい
る鏡筒15を通って試料室16に入り、被露光試料17
上に到達し、この上に塗布されているレジスト膜を露光
してレジストパターンを形成する。被露光試料17は上
下左右方向に移動可能なステージ18に固定されてその
位置が制御される。
FIG. 3 shows a sectional view of the main parts of the electron beam exposure apparatus. In the figure, an electron beam 12 emitted from an electron gun 11 passes through a lens barrel 15 in which a lens system 13, a deflection system 14, etc. are housed, enters a sample chamber 16, and enters a sample chamber 16.
The photoresist reaches the top and exposes the resist film coated thereon to form a resist pattern. The sample 17 to be exposed is fixed to a stage 18 that is movable in vertical and horizontal directions, and its position is controlled.

電子ビーム露光装置は、この他多くの制御部品からなっ
ておりこれら全ての部品が筺体19内に収納されるとと
もにその内部は排気口20から排気されて高真空に保持
されている。電子ビーム12が被露光試料17を照射す
る位置は予め用意されたパターン設計データを外部から
アンプやDACを通して上記レンズ系13や偏向系14
に与えることによって制御する。
The electron beam exposure apparatus consists of many other control parts, and all these parts are housed in a housing 19, and the inside thereof is evacuated through an exhaust port 20 and maintained at a high vacuum. The position where the electron beam 12 irradiates the sample 17 to be exposed is determined by transmitting pattern design data prepared in advance to the lens system 13 and deflection system 14 from outside through an amplifier or DAC.
control by giving

ところで電子ビームの照射位置にはレンズ系の収差や歪
み等に起因する装置固有のずれが存在する。そのため被
露光試料を照射する前、照射位置のずれを実験的に取得
して補正データを作威しこれを先に述べたパターン設計
データに加えて実際に装置に与える露光データとする。
Incidentally, there is a deviation inherent to the device at the irradiation position of the electron beam due to aberrations, distortions, etc. of the lens system. Therefore, before irradiating the sample to be exposed, the deviation of the irradiation position is experimentally obtained to create correction data, which is added to the pattern design data described above and used as the exposure data actually given to the apparatus.

しかし、装置の使用を続けていくと電子ビームの照射位
置には再びずれが生じるようになる。これは、電子ビー
ムが鏡筒を通過する際に鏡筒内の残留ガスあるいは鏡筒
の継ぎ目部分に用いられているグリース等から揮発する
有機成分、さらには電子ビームの照射により飛散したレ
ジスト等が鏡筒内壁に付着することに起因する。このよ
うな付着物がその後に鏡筒内を通過する電子ビームによ
ってチャージアップされ、その部分に蓄積された電荷が
電子ビームに力を及ぼして照射位置にずれを生じさせる
ものである。特に同図に点線で示したように被露光試料
近傍の鏡筒内壁には多量のレジストが飛散して付着物が
蓄積され、電子ビームの照射位置のずれに大きな影響を
与える。従来、装置の使用に際して一定の使用時間毎に
補正データを変更してずれの量の修正を行っていたが、
付着物の量が多くなるとずれの量も大きくなり、補正デ
ータのみで照射位置の正確な補正をすることが困難にな
る。
However, as the device continues to be used, the irradiation position of the electron beam begins to shift again. This is caused by residual gas in the lens barrel when the electron beam passes through the lens barrel, organic components that volatilize from grease used in the joints of the lens barrel, and resists that are scattered by the electron beam irradiation. This is caused by adhesion to the inner wall of the lens barrel. Such deposits are then charged up by the electron beam passing through the lens barrel, and the charge accumulated in that portion exerts a force on the electron beam, causing a shift in the irradiation position. In particular, as shown by the dotted line in the figure, a large amount of resist scatters and deposits accumulate on the inner wall of the lens barrel near the sample to be exposed, which greatly affects the deviation of the irradiation position of the electron beam. Conventionally, when using a device, the amount of deviation was corrected by changing the correction data every certain time of use.
As the amount of deposits increases, the amount of deviation also increases, making it difficult to accurately correct the irradiation position using only correction data.

従って鏡筒内壁の付着物を除去するために定期的に装置
のオーバーホール、即ち分解消掃を行わねばならない。
Therefore, in order to remove the deposits on the inner wall of the lens barrel, it is necessary to periodically overhaul the device, that is, perform decontamination cleaning.

しかし多数の部品の複雑な組合せからなり高真空度を要
求される装置の分解消掃には多くの手数と時間を要し、
装置の稼働率を低下さ゛せる原因となる。そのため、装
置の分解を行わずに鏡筒内壁の付着物を除去することが
望ましい。
However, it takes a lot of effort and time to clean equipment that requires a high degree of vacuum and consists of a complex combination of many parts.
This causes a decrease in the operating rate of the equipment. Therefore, it is desirable to remove the deposits on the inner wall of the lens barrel without disassembling the device.

第4図はそのような方法の一例を説明するための断面図
であり、第3図と同一のものには同一番号を付した。同
図は試料室16から鏡筒15内にクリーニング用治具を
挿入した状態を示したものである。
FIG. 4 is a sectional view for explaining an example of such a method, and the same parts as in FIG. 3 are given the same numbers. This figure shows the cleaning jig inserted into the lens barrel 15 from the sample chamber 16.

このクリーニング用治具は電極22と電極22に接続さ
れた電極支持棒21eからなり、試料室内で固定台(図
示せず)に固定され、電極支持棒21eのもう一方の端
からケーブル24を通して外部の高周波電源25に接続
される。モして鏡筒15内にガス導入口(図示せず)を
通して酸素を含むクリーニングガスを流し高周波電源2
5から高周波電力を供給すると、電極22と鏡筒15の
内壁との間で放電が生じ、上記クリーニングガスがプラ
ズマ化される。プラズマ化されたクリーニングガスは鏡
筒内壁の付着物と反応し排気口20より排気される。
This cleaning jig consists of an electrode 22 and an electrode support rod 21e connected to the electrode 22, and is fixed to a fixing table (not shown) in the sample chamber, and externally by passing a cable 24 from the other end of the electrode support rod 21e. It is connected to the high frequency power supply 25 of. A cleaning gas containing oxygen is flowed into the lens barrel 15 through a gas inlet (not shown) and the high frequency power source 2
When high frequency power is supplied from 5, a discharge occurs between the electrode 22 and the inner wall of the lens barrel 15, and the cleaning gas is turned into plasma. The cleaning gas turned into plasma reacts with deposits on the inner wall of the lens barrel and is exhausted from the exhaust port 20.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

しかし上記の方法ではクリーニング用治具の先端の電極
と鏡筒内壁との間に放電を生じさせるため、鏡筒内壁近
傍で生じたプラズマ中のイオンによって鏡筒内壁が直接
スパッタされて損傷を受け、例えば鏡筒内壁表面のメツ
キが黒変する等の問題があった。
However, in the above method, a discharge is generated between the electrode at the tip of the cleaning jig and the inner wall of the lens barrel, so the inner wall of the lens barrel is directly sputtered and damaged by ions in the plasma generated near the inner wall of the lens barrel. For example, there were problems such as the plating on the inner wall surface of the lens barrel turning black.

そこで本発明は、鏡筒に損傷を与えることなく鏡筒内壁
の付着物を除去することを目的とする。
Therefore, an object of the present invention is to remove the deposits from the inner wall of the lens barrel without damaging the lens barrel.

〔課題を解決するための手段〕[Means to solve the problem]

上記課題の解決は、ガス導入部、ガス導通部及びガス導
出部を備えた円筒と、該ガス導出部の先端に配置された
一対の電極と、該一対の電極への電力供給装置とからな
り、該ガス導入部から導入され該ガス導通部を通って該
ガス導出部から導出されたクリーニングガスを該一対の
電極間でプラズマ化した後荷電粒子ビーム露光装置の鏡
筒内に送り込み該鏡筒内壁の付着物と反応させて該付着
物を除去するようにしたクリーニング用治具を有する荷
電粒子ビーム露光装置であって、該一対の電極の一方又
は双方の電極に磁石を設けたことを特徴とする荷電粒子
ビーム露光装置によって達成される。
The solution to the above problem consists of a cylinder equipped with a gas introduction part, a gas conduction part, and a gas outlet part, a pair of electrodes arranged at the tip of the gas outlet part, and a power supply device to the pair of electrodes. , a cleaning gas introduced from the gas inlet, passed through the gas conduction part, and led out from the gas outlet is turned into plasma between the pair of electrodes, and then sent into a lens barrel of a charged particle beam exposure apparatus; A charged particle beam exposure apparatus having a cleaning jig that reacts with deposits on an inner wall to remove the deposits, characterized in that one or both of the pair of electrodes is provided with a magnet. This is achieved using a charged particle beam exposure system.

〔作 用〕[For production]

一対の電極の一方又は双方に設けられた磁石により上記
電極近傍に磁力線が集中する。したがって上記一対の電
極間に電力を加えてプラズマを形成した場合、生成され
たイオンは上記磁力線に沿って閉じ込められて鏡筒内壁
を直接スパッタすることがない。そのため鏡筒内壁がイ
オンによって損傷を受けることなく鏡筒内壁の付着物を
除去することが可能となる。
Magnets provided on one or both of the pair of electrodes concentrate lines of magnetic force near the electrodes. Therefore, when plasma is formed by applying power between the pair of electrodes, the generated ions are confined along the lines of magnetic force and do not directly sputter the inner wall of the lens barrel. Therefore, it is possible to remove deposits on the inner wall of the lens barrel without damaging the inner wall of the lens barrel by ions.

〔実施例〕〔Example〕

第1図は本発明の実施例を示す要部断面図であり、第3
図と同一のものには同一番号を付した。
FIG. 1 is a sectional view of main parts showing an embodiment of the present invention, and FIG.
Items that are the same as those in the figure are given the same numbers.

同図は電子ビーム露光装置の試料室16内にクリーニン
グ用治具を設置し、昇降機構を用いて鏡筒15内へ挿入
した状態を示している。同図においてクリーニング用治
具はガス導入部21a、ガス導通部21b及びガス導出
部21cを備えた円筒21を有し、ガス導出部21cの
先端には一対の電極22a 、22bが設けられている
。電極22aには磁石22cが取り付けられており、こ
れが絶縁碍子27によってガス導出部21cの先端に支
持固定される。さらに、電極22aにはケーブル22d
に接続されている。電極22bは電極支持枠28によっ
て円筒21に導通して固定され、電極22aと対向して
いる。一方、ガス導入部21aはフレキシブル円筒管2
3と接続されて筺体19の外部へ引き出され、フレキシ
ブル円筒管23の中心を通るケーブル24はケーブル2
2dと接続されかつ外部で高周波電源25と接続されて
いる。また、クリーニング用治具を鏡筒15内に挿入す
るための昇降機構は固定台30、固定台支持枠31、ポ
ールねじ32、傘歯車33、パルスモータ−34、クリ
ーニング用治具固定枠35からなっており、固定台30
に固定台支持枠31を通して取り付けられたボールねじ
32の先端の傘歯車33をパルスモータ−34により回
転させてクリーニング用治具固定枠35を上下に移動さ
せることによって、これに固定された円筒21を上下に
移動させるものである。
This figure shows a state in which a cleaning jig is installed in a sample chamber 16 of an electron beam exposure apparatus and inserted into a lens barrel 15 using an elevating mechanism. In the figure, the cleaning jig has a cylinder 21 having a gas introduction part 21a, a gas conduction part 21b, and a gas outlet part 21c, and a pair of electrodes 22a and 22b are provided at the tip of the gas outlet part 21c. . A magnet 22c is attached to the electrode 22a, and the magnet 22c is supported and fixed to the tip of the gas outlet portion 21c by an insulator 27. Further, a cable 22d is connected to the electrode 22a.
It is connected to the. The electrode 22b is electrically connected and fixed to the cylinder 21 by the electrode support frame 28, and faces the electrode 22a. On the other hand, the gas introduction part 21a is a flexible cylindrical pipe 2.
The cable 24 is connected to the cable 2 and drawn out of the housing 19 and passes through the center of the flexible cylindrical tube 23.
2d and externally connected to a high frequency power source 25. The lifting mechanism for inserting the cleaning jig into the lens barrel 15 includes a fixed base 30, a fixed base support frame 31, a pole screw 32, a bevel gear 33, a pulse motor 34, and a cleaning jig fixing frame 35. The fixed base 30
The cylinder 21 fixed to the cleaning jig fixing frame 35 is moved up and down by rotating the bevel gear 33 at the tip of the ball screw 32 attached through the fixing base support frame 31 by the pulse motor 34. It moves up and down.

以上のように構成されたクリーニング用治具に対し、外
部から酸素を含むガスをフレキシブル円筒管23を通し
て送り込む一方、排気口2oから鏡筒内を排気して内部
の圧力を0.01 Torrに保持する。
To the cleaning jig configured as described above, a gas containing oxygen is sent from the outside through the flexible cylindrical tube 23, while the inside of the lens barrel is exhausted from the exhaust port 2o to maintain the internal pressure at 0.01 Torr. do.

また一対の電極22a 、22bには周波数500KH
z、電力50Wの電力を加えて放電させてガス導出部2
1cから鏡筒15内に導出されるガスをプラズマ化する
In addition, a pair of electrodes 22a and 22b have a frequency of 500 KH.
z, apply a power of 50W and discharge it to the gas outlet part 2.
The gas led out from 1c into the lens barrel 15 is turned into plasma.

このとき、電極22aの先端に取り付けた磁石22cの
近傍の磁力線に沿ってプラズマ中のイオンが集中するた
め鏡筒15の内壁はイオンの衝突によって直接損傷を受
けることなく、その表面の付着物が除去される。
At this time, the ions in the plasma are concentrated along the magnetic field lines near the magnet 22c attached to the tip of the electrode 22a, so the inner wall of the lens barrel 15 is not directly damaged by the ion collision, and the deposits on its surface are removed. removed.

ガス導出部に設ける一対の電極として、上記実施例に示
したものの他、例えば第2図に示したような形状のもの
を用いることができる。即ち、ガス導入部、ガス導通部
及びガス導出部を備えた円筒21の先端に同図に示した
ような対向する電極22a、22bを設け、′磁石22
cを取り付けた一方の電極22aには円筒21の外側に
沿って該円筒21とは絶縁されたケーブル22dを通し
て外部から電力を供給し電極22bとの間で放電させる
ものである。
In addition to the electrodes shown in the above embodiments, electrodes having a shape as shown in FIG. 2, for example, can be used as the pair of electrodes provided in the gas outlet section. That is, opposing electrodes 22a and 22b as shown in the figure are provided at the tip of a cylinder 21 equipped with a gas introduction part, a gas conduction part, and a gas outlet part, and the 'magnet 22
Electric power is supplied from the outside to one electrode 22a attached to the electrode 22a along the outside of the cylinder 21 through a cable 22d insulated from the cylinder 21, and discharge is caused between it and the electrode 22b.

なお、本発明に係るクリーニング用治具は電子ビーム露
光装置に限らず、イオンビーム等の荷電粒子ビーム露光
装置に利用できることはいうまでもない。
It goes without saying that the cleaning jig according to the present invention can be used not only for electron beam exposure apparatuses but also for charged particle beam exposure apparatuses such as ion beams.

〔発明の効果〕〔Effect of the invention〕

以上のように本発明によれば、装置の分解を行うことな
く、かつ鏡筒に損傷を与えることなく迅速かつ効果的に
鏡筒内壁の付着物を除去することができるため、装置の
信頼性向上、稼働率の向上に有益である。
As described above, according to the present invention, deposits on the inner wall of the lens barrel can be quickly and effectively removed without disassembling the device and without damaging the lens barrel, thereby increasing the reliability of the device. It is beneficial for improving operation rate.

【図面の簡単な説明】[Brief explanation of drawings]

第1.図、第2図は本発明の実施例を示す断面図、第3
図、第4図は従来例の問題点を示す断面図、である。 図において、 11は電子銃、 12は電子ビーム、 13はレンズ系、 14は偏向系、 15は鏡筒、 16は試料室、 17は被露光試料、 18はステージ、 19は筐体、 20は排気口、 21は円筒、 21aはガス導入部、 21bはガス導通部、 21cはガス導出部、 21eは電極支持棒、 22.22a 、 22bは電極、 22cは磁石、 22d 、 24はケーブル、 23はフレキシブル円筒、 25は高周波電源、 27は絶縁碍子、 28は電極支持枠、 30は固定台、 31は固定台支持枠、 32はボールねじ、 33は傘歯車、 34はパルスモータ− 35はクリーニング用治具固定枠、 である。 *eaM の@iイFIKM4#aa 冨 1 図 2Fee@ の 実う1Qイ列゛Σ、テトV?面ぷコ第 図 従来中1の間層点Σ示ず断面図 第 閉
1st. Figure 2 is a sectional view showing an embodiment of the present invention, Figure 3 is a sectional view showing an embodiment of the present invention.
4 are cross-sectional views showing problems in the conventional example. In the figure, 11 is an electron gun, 12 is an electron beam, 13 is a lens system, 14 is a deflection system, 15 is a lens barrel, 16 is a sample chamber, 17 is a sample to be exposed, 18 is a stage, 19 is a housing, and 20 is a Exhaust port, 21 is a cylinder, 21a is a gas introduction part, 21b is a gas conduction part, 21c is a gas outlet part, 21e is an electrode support rod, 22. 22a, 22b are electrodes, 22c is a magnet, 22d, 24 are cables, 23 25 is a flexible cylinder, 25 is a high frequency power supply, 27 is an insulator, 28 is an electrode support frame, 30 is a fixed base, 31 is a fixed base support frame, 32 is a ball screw, 33 is a bevel gear, 34 is a pulse motor, and 35 is a cleaning This is the jig fixing frame. *eaM's @iFIKM4#aa Tomi 1 Figure 2Fee@'s fruitful 1Q I sequence ゛Σ, Tet V? Menpuko Figure 1 Conventional middle layer point Σ not shown Cross-sectional view Closed

Claims (1)

【特許請求の範囲】 ガス導入部(21a)、ガス導通部(21b)及びガス
導出部(21c)を備えた円筒(21)と、該ガス導出
部(21c)の先端に配置された一対の電極(22a、
22b)と、該一対の電極への電力供給装置とからなり
、該ガス導入部(21a)から導入され該ガス導通部(
21b)を通って該ガス導出部(21c)から導出され
たクリーニングガスを該一対の電極間でプラズマ化した
後荷電粒子ビーム露光装置の鏡筒(15)内に送り込み
該鏡筒内壁の付着物と反応させて該付着物を除去するよ
うにしたクリーニング用治具を有する荷電粒子ビーム露
光装置であって、 該一対の電極の一方又は双方の電極に磁石(22c)を
設けたことを特徴とする荷電粒子ビーム露光装置。
[Claims] A cylinder (21) equipped with a gas introduction part (21a), a gas conduction part (21b), and a gas outlet part (21c), and a pair of cylinders arranged at the tip of the gas outlet part (21c). Electrode (22a,
22b) and a power supply device to the pair of electrodes, which is introduced from the gas introduction part (21a) and connected to the gas conduction part (21a).
The cleaning gas led out from the gas outlet (21c) through 21b) is turned into plasma between the pair of electrodes, and then sent into the lens barrel (15) of the charged particle beam exposure apparatus to remove deposits on the inner wall of the lens barrel. A charged particle beam exposure apparatus having a cleaning jig adapted to remove the deposits by reacting with the charged particle beam, characterized in that a magnet (22c) is provided on one or both of the pair of electrodes. charged particle beam exposure equipment.
JP1183085A 1989-07-13 1989-07-13 Charged particle beam exposure device Pending JPH0346221A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1183085A JPH0346221A (en) 1989-07-13 1989-07-13 Charged particle beam exposure device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1183085A JPH0346221A (en) 1989-07-13 1989-07-13 Charged particle beam exposure device

Publications (1)

Publication Number Publication Date
JPH0346221A true JPH0346221A (en) 1991-02-27

Family

ID=16129501

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1183085A Pending JPH0346221A (en) 1989-07-13 1989-07-13 Charged particle beam exposure device

Country Status (1)

Country Link
JP (1) JPH0346221A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2333809A4 (en) * 2008-09-30 2012-04-25 Hitachi High Tech Corp ELECTRONIC MICROSCOPE

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2333809A4 (en) * 2008-09-30 2012-04-25 Hitachi High Tech Corp ELECTRONIC MICROSCOPE

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