JPH0347573B2 - - Google Patents
Info
- Publication number
- JPH0347573B2 JPH0347573B2 JP58151232A JP15123283A JPH0347573B2 JP H0347573 B2 JPH0347573 B2 JP H0347573B2 JP 58151232 A JP58151232 A JP 58151232A JP 15123283 A JP15123283 A JP 15123283A JP H0347573 B2 JPH0347573 B2 JP H0347573B2
- Authority
- JP
- Japan
- Prior art keywords
- ion beam
- workpiece
- vacuum
- vacuum container
- ion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3178—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for applying thin layers on objects
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/3002—Details
- H01J37/3007—Electron or ion-optical systems
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、イオンビームを照射し、イオンのス
パツタリング効果によつて、薄膜の露出部をエツ
チングして、基板上に薄膜回路等を形成するため
のイオンビーム装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention is a method for forming a thin film circuit or the like on a substrate by irradiating an ion beam and etching the exposed portion of a thin film by the sputtering effect of the ions. This relates to an ion beam device.
従来例の構成とその問題点
近年、半導体分野を中心に薄膜を利用したデバ
イスの需要は、年々高まつている。一方、その製
造方法においては、薄膜の付着、除去と種々の工
程があり、用途に応じ、適切な加工法および装置
を利用している。この薄膜除去法の一つとして、
イオンビームエツチング法が検討されている。Conventional configurations and their problems In recent years, demand for devices using thin films has been increasing year by year, mainly in the semiconductor field. On the other hand, the manufacturing method includes various steps such as attachment and removal of thin films, and appropriate processing methods and equipment are used depending on the application. One of the methods for removing this thin film is
Ion beam etching method is being considered.
以下、図面を参照しながら、従来のイオンビー
ム装置について説明する。 Hereinafter, a conventional ion beam apparatus will be described with reference to the drawings.
従来のイオンビーム装置は、第１図にその具体
構成を示す。第１図において、１は真空状態を維
持することが可能な真空容器、２はイオンビーム
を発生するイオンビーム発生器、３はレジストマ
スクによつて、パターン形成された被加工物、３
ａは材質がガラスの基材、３ｂは真空蒸着法で形
成された膜厚が約1000Åの金属薄膜、３ｃは膜厚
が約1.7μｍのレジストマスク、４は被加工物３を
保持し、かつ被加工物３を冷却することが可能な
試料台、５はイオンビーム発生器２より発生する
イオン粒子がアルゴン（以下Arと略す）イオン
のイオンビームである。 The specific configuration of a conventional ion beam device is shown in FIG. In FIG. 1, 1 is a vacuum container capable of maintaining a vacuum state, 2 is an ion beam generator that generates an ion beam, 3 is a workpiece patterned with a resist mask, 3
a is a base material made of glass; 3b is a metal thin film with a thickness of about 1000 Å formed by vacuum evaporation; 3c is a resist mask with a film thickness of about 1.7 μm; 4 holds the workpiece 3; A sample stage 5 capable of cooling the workpiece 3 is an ion beam in which the ion particles generated by the ion beam generator 2 are argon (hereinafter abbreviated as Ar) ions.
以上のように構成されたイオンビーム装置につ
いて、以下その動作を説明する。 The operation of the ion beam apparatus configured as described above will be described below.
まず、真空ポンプにより、真空容器１内の真空
度を２×10-5Torr以下に真空排気した後、Arガ
スを6.0ないし7.0SCCMの流量でイオン発生器２
に導入し、真空容器１内の真空度を1.8×
10-4Torr程度に保持する。次に、イオン発生器
２の構成部品に所定の電力および冷却水等を供給
し、被加工物３方向にArイオンのイオンビーム
５を発生させ、被加工物３にArイオンを照射す
る。被加工物３表面に衝突したArイオン粒子は、
被加工物３の原子を除去する。加速されたArイ
オン粒子が、被加工物３に衝突すると、Arイオ
ン粒子の運動量が被加工物３の原子に移り、その
原子は、Arイオン粒子により、はじき出される。
すなわち、イオンビーム５照射によるエツチング
は、スパツタリング効果に起因し、Arイオン粒
子のエネルギーが、被加工物３の構成原子の結合
エネルギー（約25eV）より。大きい場合に進行
する。この場合、レジストマスク３ｃも、エツチ
ングされるべき金属薄膜３ｂと共にイオンビーム
５によつて除去されるが、金属薄膜３ｂに比較
し、レジストマスク３ｃの膜厚が大きいため、金
属薄膜３ｂの露出部が、レジストマスク３ｃより
も早く除去することが可能である。また、イオン
ビーム５照射による被加工物３の加工速度（エツ
チング速度）Ｒ（θ）は、一般に次式で表わされ
る。 First, the degree of vacuum in the vacuum container 1 is evacuated to 2×10 -5 Torr or less using a vacuum pump, and then Ar gas is pumped into the ion generator 2 at a flow rate of 6.0 to 7.0 SCCM.
, and the degree of vacuum inside vacuum container 1 is increased to 1.8×
Maintain at around 10 -4 Torr. Next, predetermined electric power, cooling water, etc. are supplied to the components of the ion generator 2, and an ion beam 5 of Ar ions is generated in the direction of the workpiece 3, so that the workpiece 3 is irradiated with Ar ions. The Ar ion particles collided with the surface of the workpiece 3,
Atoms of the workpiece 3 are removed. When the accelerated Ar ion particles collide with the workpiece 3, the momentum of the Ar ion particles is transferred to the atoms of the workpiece 3, and the atoms are repelled by the Ar ion particles.
That is, etching by irradiation with the ion beam 5 is caused by the sputtering effect, and the energy of the Ar ion particles is higher than the bond energy (about 25 eV) of the constituent atoms of the workpiece 3. Proceed if it is large. In this case, the resist mask 3c is also removed by the ion beam 5 together with the metal thin film 3b to be etched, but since the resist mask 3c is thicker than the metal thin film 3b, the exposed parts of the metal thin film 3b are removed. However, it can be removed faster than the resist mask 3c. Further, the processing speed (etching speed) R(θ) of the workpiece 3 by irradiation with the ion beam 5 is generally expressed by the following equation.
Ｒ(θ)＝Ａ×Ｉ×Ｓ(θ)cosθ／ｎ Å／min
ここで、ｎは被加工物３の原子密度（atoms／
cm3）、Ｉはイオンビーム電流密度（ｍＡ／cm2）、θ
は被加工物３へのイオンビーム入射角、Ｓ（θ）
はスパツタリング率、Ａは定数である。すなわ
ち、被加工物３の加工速度は、イオンビーム電流
密度に比例する関係がある。従がつて、被加工物
３に照射されるイオンビーム５のイオンビーム電
流密度が、被加工物３表面上で、強弱の分布をも
てば、被加工物３の加工速度は、分布をもつこと
になる。概して、被加工物３には、加工均一性を
要求するものが多い。例えば、オーバーエツチン
グ時、被加工層の下地に悪影響を与えるもの、ま
た、レジストの後退により、被加工物３の製品品
質を悪化させるもの等、加工均一性に伴う種々の
問題がある。そこで、ビーム径が大きいイオンビ
ーム５を用いて、中央部のイオンビーム電流密度
が比較的均一な部分を利用して、被加工物３を処
理する試みが成されてきた。しかし、被加工物３
以外へのイオンビーム５の照射量が増加するた
め、真空容器１内の構成部品に悪影響を与えた。
例えば、真空容器１内の駆動機構部品等をエツチ
ングし、駆動のメカニズムに誤動作を発生させた
りする欠点を有していた。 R(θ)=A×I×S(θ)cosθ/n Å/min Here, n is the atomic density of the workpiece 3 (atoms/
cm 3 ), I is the ion beam current density (mA/cm 2 ), θ
is the angle of incidence of the ion beam on the workpiece 3, S(θ)
is the sputtering rate and A is a constant. That is, the processing speed of the workpiece 3 is proportional to the ion beam current density. Therefore, if the ion beam current density of the ion beam 5 irradiating the workpiece 3 has a strength distribution on the surface of the workpiece 3, the processing speed of the workpiece 3 will have a distribution. It turns out. In general, many of the workpieces 3 require uniform processing. For example, there are various problems associated with processing uniformity, such as over-etching, which adversely affects the underlying layer of the processed layer, and deterioration of the product quality of the processed object 3 due to retreat of the resist. Therefore, attempts have been made to process the workpiece 3 using the ion beam 5 having a large beam diameter and utilizing the central portion where the ion beam current density is relatively uniform. However, workpiece 3
Since the amount of ion beam 5 irradiated to other parts increased, components inside the vacuum vessel 1 were adversely affected.
For example, it has the disadvantage that drive mechanism parts within the vacuum container 1 are etched, causing malfunctions in the drive mechanism.
発明の目的
本発明は、このような従来の欠点を除去するも
のであり、ビーム径の大きいイオンビームを利用
し、被加工物の加工均一性を向上させる際、また
イオンビームを長時間被加工物に照射する際、ま
た、試料台上に位置する複数の被加工物を１枚毎
に、連続して処理する際、被加工物以外の真空容
器内に位置する構成部品に悪影響を与えないイオ
ンビーム装置を提供するものである。Purpose of the Invention The present invention is intended to eliminate such conventional drawbacks, and to improve the processing uniformity of a workpiece by using an ion beam with a large beam diameter, and to improve the processing uniformity of a workpiece by using an ion beam for a long time. When irradiating objects, or when sequentially processing multiple workpieces located on a sample stage one by one, there is no adverse effect on components located in the vacuum container other than the workpieces. The present invention provides an ion beam device.
発明の構成
本発明は、真空状態の維持が可能な真空容器
と、ビーム径が少なくとも10mm以上のイオンビー
ムを発生するイオンビーム発生器と、イオンビー
ムの照射によつて、表面加工される被加工物と、
少なくとも１つ以上の被加工物を保持する試料台
と、イオンビーム発生器と被加工物の間にあり、
少なくとも１つの被加工物以外の真空容器内構成
部品へのイオンビーム照射を遮断することが可能
なシヤヘイ体を設けることにより、イオンビーム
照射時に、真空容器内に位置する構成部品に悪影
響を与えることなく、被加工物の加工を可能にす
るものである。Composition of the Invention The present invention provides a vacuum container that can maintain a vacuum state, an ion beam generator that generates an ion beam with a beam diameter of at least 10 mm, and a workpiece whose surface is to be processed by irradiation with the ion beam. things and
a sample stage holding at least one or more workpieces, and between the ion beam generator and the workpieces;
By providing a shear body capable of blocking ion beam irradiation to components inside the vacuum container other than at least one workpiece, it is possible to adversely affect the components located inside the vacuum container during ion beam irradiation. It is possible to process the workpiece without any problems.
実施例の説明
以下、本発明の一実施例を図面を参照して説明
する。DESCRIPTION OF EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings.
第２図は、本発明の実施例におけるイオンビー
ム装置を示すものである。第２図において、１１
は真空容器、１２はArイオンのイオンビームを
発生するイオンビーム発生器、１３はレジストマ
スクによつて、パターン形成された被加工物、１
３ａは口40mm、厚さ0.8mmの基材、１３ｂは真空
蒸着法で基材１３ａ上に形成された膜厚が約1000
Åの金属薄膜、１３ｃは膜厚が約1.7μｍのレジス
トマスク、１４は被加工物１３を保持し、かつ被
加工物１３を冷却することが可能で、少なくとも
一方向に移動することが可能な試料台、１５はイ
オンビーム発生器１２より発生するビーム径が約
80mmのArイオンのイオンビーム、１６は試料台
１４とイオンビーム発生器１２の間にあり、少な
くとも１つの被加工物１３以外へのイオンビーム
を遮断することが可能な強制冷却されたシヤヘイ
体、１６ａは材質がステンレスであり、強制冷却
されたシヤヘイ用基材、１６ｂはシヤヘイ用基材
１６ａにボルト固定等で接して位置した発泡状の
金属体または、金属メツシユである。 FIG. 2 shows an ion beam apparatus in an embodiment of the present invention. In Figure 2, 11
1 is a vacuum container, 12 is an ion beam generator that generates an ion beam of Ar ions, 13 is a workpiece patterned with a resist mask, 1
3a is a base material with an opening of 40 mm and a thickness of 0.8 mm, and 13b is a film formed on the base material 13a by a vacuum evaporation method and has a thickness of approximately 1000 mm.
13c is a resist mask with a film thickness of about 1.7 μm, 14 is a resist mask that holds the workpiece 13, can cool the workpiece 13, and can move in at least one direction. The sample stage 15 has a diameter of the beam generated from the ion beam generator 12.
80 mm Ar ion ion beam, 16 is a forcedly cooled shear body that is located between the sample stage 14 and the ion beam generator 12 and is capable of blocking the ion beam from reaching at least one workpiece 13; Reference numeral 16a is made of stainless steel and is a forcedly cooled shearing base material, and 16b is a foamed metal body or metal mesh that is placed in contact with the shearing base material 16a by bolting or the like.
以上のように構成されたイオンビーム装置につ
いて、以下その動作を説明する。 The operation of the ion beam apparatus configured as described above will be described below.
まず、真空ポンプにより、真空容器１１内の真
空度を２×10-5Torr以下に真空排気した後、イ
オンビーム発生器１２にArガスを導入する。こ
の時、真空容器１１内の真空度は1.8×10-4Torr
になる。次に、イオンビーム発生器１２に所定の
電力および冷却水等を供給し、Arイオンのイオ
ンビーム１５を発生させる。イオンビーム１５
は、シヤヘイ体１６の口42mmの窓を通り、被加工
物１３に入射し、被加工物１３をエツチング加工
する。被加工物１３の加工均一性を向上させる目
的で、被加工物１３の処理面積に対し、イオンビ
ーム１５のビーム径が大きいものを利用し、その
ビーム電流密度の均一な部分によつて被加工物１
３を処理する方法をとつているため、イオンビー
ム１５の約65％は、被加工物１３の処理に対し
て、有効に作用しない。しかし、前記65％のイオ
ンビーム１５は、シヤヘイ体１６に入射し、シヤ
ヘイ体１６下の構成部品には、照射されないた
め、構成部品に悪影響を与えることがなかつた。
また、シヤヘイ体１６は、強制冷却されているた
め、長時間のイオンビーム１５照射においても、
変形等が生ぜず、ほぼ一定の位置を保持すること
が可能であり、かつシヤヘイ体１６の温度上昇に
起因するレジストダメージがなかつた。また、被
加工物１３のエツチング処理に伴い、エツチング
生成物が、シヤヘイ体１６の被加工物１３側に飛
来し、付着し、その膜厚を増加し、被加工物１３
の加工面に落下し、エツチング不良をずる危険性
があるが、シヤヘイ体１６の被加工物１３側は、
発泡状の金属体１６ｂで構成されており、前記エ
ツチング生成物薄膜との密着力は、非常に強固な
ものであつた。 First, the degree of vacuum in the vacuum container 11 is evacuated to 2×10 −5 Torr or less using a vacuum pump, and then Ar gas is introduced into the ion beam generator 12 . At this time, the degree of vacuum inside the vacuum container 11 is 1.8×10 -4 Torr
become. Next, predetermined electric power, cooling water, etc. are supplied to the ion beam generator 12 to generate an ion beam 15 of Ar ions. ion beam 15
passes through the 42 mm window of the shear body 16 and enters the workpiece 13, etching the workpiece 13. In order to improve the processing uniformity of the workpiece 13, the ion beam 15 has a large beam diameter relative to the processing area of the workpiece 13, and the workpiece is processed using a portion with a uniform beam current density. Thing 1
3, approximately 65% of the ion beam 15 does not effectively affect the processing of the workpiece 13. However, the 65% ion beam 15 entered the shear body 16 and did not irradiate the components below the shear body 16, so that it did not have any adverse effect on the components.
In addition, since the shear body 16 is forcedly cooled, even when irradiated with the ion beam 15 for a long time,
It was possible to maintain a substantially constant position without causing deformation, and there was no resist damage caused by the temperature rise of the shear body 16. Further, as the workpiece 13 is etched, the etching product flies to the workpiece 13 side of the shear body 16 and adheres thereto, increasing the film thickness and etching the workpiece 13.
There is a risk that the material may fall onto the processing surface of the workpiece 13 and cause etching defects.
It was composed of a foamed metal body 16b, and its adhesion to the etching product thin film was very strong.
以上のように、試料台１４とイオンビーム発生
器１２との間にあり、少なくとも１つの被加工物
１３以外の真空容器内構成部品へのイオンビーム
１５照射を遮断することが可能なシヤヘイ体１６
を設けることにより、ビーム径の大きいイオンビ
ーム１５を利用し、被加工物１３の加工均一性を
向上させる際、また、イオンビーム１５を長時間
被加工物１３に照射する際、また、試料台１４上
に位置する複数の被加工物１３を１枚毎に連続し
て処理する際、被加工物１３以外の真空容器１１
内に位置する構成部品に悪影響を与えない様にす
ることが可能である。 As described above, the shear body 16 is located between the sample stage 14 and the ion beam generator 12 and is capable of blocking irradiation of the ion beam 15 to components inside the vacuum container other than at least one workpiece 13.
By providing a When processing a plurality of workpieces 13 located on the workpiece 14 one by one, the vacuum container 11 other than the workpiece 13
It is possible to avoid adversely affecting the components located inside.
発明の効果
以上のように本発明は、特に試料台とイオンビ
ーム発生器との間にあり、少なくとも１つの被加
工物以外の真空容器内構成部品へのイオンビーム
照射を遮断することが可能なシヤヘイ体を設ける
ことにより、ビーム径の大きいイオンビームを利
用し、被加工物の加工均一性を向上させる際、ま
た、イオンビームを長時間被加工物に照射する
際、また、試料台上に位置する複数の被加工物を
１枚毎に連続して処理する際、被加工物以外の真
空容器内に位置する構成部品に悪影響を与えない
様にすることが可能であり、実用上、きわめて有
利なものである。Effects of the Invention As described above, the present invention is particularly advantageous in that it is possible to block ion beam irradiation to components in a vacuum chamber other than at least one workpiece, which is located between a sample stage and an ion beam generator. By providing a shear body, it is possible to use an ion beam with a large beam diameter to improve the processing uniformity of the workpiece, or when irradiating the workpiece with the ion beam for a long time, or when it is placed on the sample stage. When processing multiple workpieces one by one in succession, it is possible to avoid adversely affecting components located in the vacuum container other than the workpieces, which is extremely effective in practical terms. It is advantageous.
第１図は従来のイオンビーム装置を示す断面
図、第２図は本発明の一実施例におけるイオンビ
ーム装置を示す断面図である。
１１……真空容器、１２……イオンビーム発生
器、１３……被加工物、１４……試料台、１６…
…シヤヘイ体。
FIG. 1 is a sectional view showing a conventional ion beam device, and FIG. 2 is a sectional view showing an ion beam device according to an embodiment of the present invention. 11... Vacuum container, 12... Ion beam generator, 13... Workpiece, 14... Sample stage, 16...
...Siyahei body.
Claims (1)
オンビームを発生するイオンビーム発生器と、前
記真空容器内にあり、イオンビームの照射によつ
て表面加工される被加工物と、前記被加工物を保
持する試料台と、前記イオンビーム発生器と被加
工物の間にあり、前記イオンビームの中央部を通
過させ、外周部を遮断するシヤヘイ体とからな
り、前記シヤヘイ体は冷却されたシヤヘイ体基材
と、前記基材の前記被加工物側に形成された発泡
状の金属体または金属メツシユより構成されてな
るイオンビーム装置。1. A vacuum container capable of maintaining a vacuum, an ion beam generator that generates an ion beam, a workpiece located in the vacuum container whose surface is processed by ion beam irradiation, and the workpiece It consists of a sample stage that holds an object, and a shear body that is located between the ion beam generator and the workpiece and that allows the ion beam to pass through the center and block the outer periphery, and the shear body is cooled. An ion beam device comprising a shear body base material and a foamed metal body or metal mesh formed on the workpiece side of the base material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58151232A JPS6042832A (en) | 1983-08-18 | 1983-08-18 | Ion beam device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58151232A JPS6042832A (en) | 1983-08-18 | 1983-08-18 | Ion beam device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6042832A JPS6042832A (en) | 1985-03-07 |
| JPH0347573B2 true JPH0347573B2 (en) | 1991-07-19 |
Family
ID=15514129
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58151232A Granted JPS6042832A (en) | 1983-08-18 | 1983-08-18 | Ion beam device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6042832A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4680332A (en) * | 1986-01-24 | 1987-07-14 | Xerox Corporation | Ink jet compositions and process for preparation thereof |
| JPH1112526A (en) * | 1997-06-24 | 1999-01-19 | Mitsubishi Pencil Co Ltd | Dye ink composition for direct liquid aqueous ballpoint pen |
| EP1816233B1 (en) * | 2001-05-22 | 2008-12-17 | Infineon Technologies AG | Method for manufacturing a layer with a predefined layer thickness profile |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52130288A (en) * | 1976-04-26 | 1977-11-01 | Hitachi Ltd | Patterning method |
| JPS5539690A (en) * | 1978-09-14 | 1980-03-19 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Plasma etching device |
| JPS5575220A (en) * | 1978-12-01 | 1980-06-06 | Nec Corp | Ion-etching apparatus |
| JPS5946031A (en) * | 1982-09-09 | 1984-03-15 | Fujitsu Ltd | Plasma treating device |
| JPS5946748A (en) * | 1982-09-10 | 1984-03-16 | Nippon Telegr & Teleph Corp <Ntt> | Ion shower unit |
-
1983
- 1983-08-18 JP JP58151232A patent/JPS6042832A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6042832A (en) | 1985-03-07 |
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| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |