JPS5575220A - Ion-etching apparatus - Google Patents
Ion-etching apparatusInfo
- Publication number
- JPS5575220A JPS5575220A JP14936678A JP14936678A JPS5575220A JP S5575220 A JPS5575220 A JP S5575220A JP 14936678 A JP14936678 A JP 14936678A JP 14936678 A JP14936678 A JP 14936678A JP S5575220 A JPS5575220 A JP S5575220A
- Authority
- JP
- Japan
- Prior art keywords
- container
- hole
- holder
- specimens
- holders
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000992 sputter etching Methods 0.000 title 1
- 238000010884 ion-beam technique Methods 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 abstract 1
Landscapes
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE: To increase the amount of specimen treatment by providng a plurality of specimen holders in a container, in the case the specimens are etched by an ion beam in a vacuum container.
CONSTITUTION: A shutter 3, which pierces through the top center of a vacuum container 2 having an exhausting hole 1 on its side, is provided so that the shutter is freely rotated. On the top of the other side of the container 2, is provided a discharge chamber 4 having a gas introducing hole 5, with a connecting hole to the container 2 being provided. A filament grid is enclosed in the discharge chamber 4. At the bottom of the container 2, two coaxial specimen holders 6a and 6b are provided so that they can be freely rotated by a driving unit 7 located at the outside. A space is provided between the upper holder 6a and the lower holder 6b. Specimens 8 are concentrically placed on said holders. A through hole 14 is provided in the part of the upper holder 6a. Ar gas introduced from the introducing hole 5 is ionized and etches the specimens on the holder 6a. Then, the holder 6a is rotated and the ions are introduced through the hole 14 and are projected to the lower holder 6b, thereby the specimens 8 are etched.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14936678A JPS5575220A (en) | 1978-12-01 | 1978-12-01 | Ion-etching apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14936678A JPS5575220A (en) | 1978-12-01 | 1978-12-01 | Ion-etching apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5575220A true JPS5575220A (en) | 1980-06-06 |
Family
ID=15473560
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14936678A Pending JPS5575220A (en) | 1978-12-01 | 1978-12-01 | Ion-etching apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5575220A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5821333A (en) * | 1981-07-30 | 1983-02-08 | Kokusai Electric Co Ltd | Sample holding device for ion beam etching equipment |
| JPS6042832A (en) * | 1983-08-18 | 1985-03-07 | Matsushita Electric Ind Co Ltd | Ion beam device |
-
1978
- 1978-12-01 JP JP14936678A patent/JPS5575220A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5821333A (en) * | 1981-07-30 | 1983-02-08 | Kokusai Electric Co Ltd | Sample holding device for ion beam etching equipment |
| JPS6042832A (en) * | 1983-08-18 | 1985-03-07 | Matsushita Electric Ind Co Ltd | Ion beam device |
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