JPH0347728B2 - - Google Patents
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- Publication number
- JPH0347728B2 JPH0347728B2 JP56154635A JP15463581A JPH0347728B2 JP H0347728 B2 JPH0347728 B2 JP H0347728B2 JP 56154635 A JP56154635 A JP 56154635A JP 15463581 A JP15463581 A JP 15463581A JP H0347728 B2 JPH0347728 B2 JP H0347728B2
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- Prior art keywords
- gas
- vapor phase
- starting material
- material gas
- alloy
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/34—Deposited materials, e.g. layers
- H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
- H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
- H10P14/3421—Arsenides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
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- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は−族化合物半導体を製造する方法
に係わり、−族化合物半導体の電気的特性に
好ましくない影響を及ぼす酸素分を低減するため
に、製造に用いる反応性出発原料ガス中に不純物
として存在するH2O、O2、CO、CO2の酸素分を
低減する方法の分野に属する。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a method for manufacturing a - group compound semiconductor, and in order to reduce oxygen content that has an unfavorable effect on the electrical characteristics of the - group compound semiconductor, It belongs to the field of methods for reducing the oxygen content of H 2 O, O 2 , CO, and CO 2 that exist as impurities in reactive starting material gases used in production.
トリメチルガリウムTMG、トリメチルアルミ
ニウムTMAとAsH3を用いたGaAlAsのMO−
CVDによる気相エピ成長ではAlの存在のために
GaAlAs結晶中に電子トラツプが多量に混入する
ことが知られており、これは、Alが酸化しやす
いことと関係していると考えられる。気相成長に
用いるキヤリヤーガスにはH2O、O2、CO、CO2
の酸素を含む不純物が考えられ、用いるガスの純
化が計られているが、現在のところ不完全であ
る。MO−CVD装置のガス配管系の配管内壁に
吸着したH2O、O2、CO、CO2或いは純化装置が
存在しないAsH3、H2SガスからのO2が原因であ
ると考えられる。キヤリヤーガス自身について
は、ほぼ完全な純度が期待されるPd拡散膜を利
用した純化装置があるが、前記原因によるものは
装置の長期に渡る使用により改善が考えられる
が、成長装置の酸素のリークもあり、不完全であ
る。
GaAlAs MO− using trimethylgallium TMG, trimethylaluminum TMA and AsH3
Due to the presence of Al in vapor phase epitaxial growth by CVD,
It is known that a large amount of electron traps are mixed into GaAlAs crystals, and this is thought to be related to the fact that Al is easily oxidized. Carrier gases used for vapor phase growth include H 2 O, O 2 , CO, and CO 2
Impurities including oxygen are considered, and efforts are being made to purify the gas used, but this is currently incomplete. The cause is thought to be H 2 O, O 2 , CO, and CO 2 adsorbed on the inner wall of the gas piping system of the MO-CVD device, or O 2 from AsH 3 and H 2 S gas for which there is no purification device. As for the carrier gas itself, there is a purification device that uses a Pd diffusion film that is expected to have almost perfect purity, but although the above-mentioned causes can be improved with long-term use of the device, oxygen leakage from the growth device is also a problem. Yes, it is incomplete.
第１図は従来公知であるGaAlAsのエピ成長装
置の概略である。キヤリヤーガスにはPb拡散膜
式の純化装置９により超高純度のH2ガスが供給
され、純化装置として適当なものがない、
AsH3、H2Sを含むH2ガスが各々ボンベ７、ボン
ベ８から供給される。原料のTMG、TMA、
DMZn（Zn（CH3）2）は各々ボンベ式のバブラー
３，４，５により気化され成長反応管１３に供給
される。反応管１３内のサセプター１５を高周波
コイル１４で誘導加熱してサセプター１５上に置
れた基板１１を加熱して、熱分解反応により
GaAlAsをエピ成長するものである。ガス配管等
ガスの通路は主にステンレスパイプが使用されて
いる。ここで、H2S、AsH3は高純度な水素をベ
ースに作られたガスを使用するが、残留分とし
て、又、ボンベ７，８、ガス配管パイプ１、調圧
器１０、流量計２、バルブ６の内壁には成長装置
の組立時に多量のH2O、O2、CO、CO2が吸着し、
容易に脱着することなく長期に渡りH2ガス中の
H2O、O2、CO、CO2の源となる。さらに成長装
置の各機器からのO2のリークが考えられ、良質
のGaAlAsがエピ成長しない。高キヤリヤー濃度
の結晶は得られず、エピ層は高抵抗化しやすく、
易動度は低い。Ga0.7A10.3AsはGaAsの易動度の
１／２以下である。 FIG. 1 schematically shows a conventionally known GaAlAs epitaxial growth apparatus. Ultra-high purity H 2 gas is supplied to the carrier gas by a Pb diffusion membrane type purifier 9, and there is no suitable purifier.
H 2 gas containing AsH 3 and H 2 S is supplied from cylinders 7 and 8, respectively. Raw materials TMG, TMA,
DMZn (Zn(CH 3 ) 2 ) is vaporized by cylinder-type bubblers 3 , 4 , and 5 and supplied to the growth reaction tube 13 . The susceptor 15 in the reaction tube 13 is heated by induction using the high-frequency coil 14, and the substrate 11 placed on the susceptor 15 is heated, resulting in a thermal decomposition reaction.
GaAlAs is epitaxially grown. Stainless steel pipes are mainly used for gas passages such as gas piping. Here, H 2 S and AsH 3 are gases made based on high-purity hydrogen, but as residual gases, there are also cylinders 7 and 8, gas piping pipe 1, pressure regulator 10, flow meter 2, A large amount of H 2 O, O 2 , CO, and CO 2 are adsorbed on the inner wall of the valve 6 when the growth apparatus is assembled.
in H2 gas for a long period of time without being easily desorbed.
Source of H2O , O2 , CO, and CO2 . Furthermore, there is a possibility that O 2 leaks from various devices in the growth apparatus, which prevents epitaxial growth of high-quality GaAlAs. Crystals with high carrier concentration cannot be obtained, and the epitaxial layer tends to have high resistance.
Mobility is low. The mobility of Ga0.7A10.3As is less than 1/2 that of GaAs.
本発明の課題はガス中の酸素分を低減するた
め、酸化しやすい物質を反応性の出発原料ガスの
分解温度より低い温度で、且つ、酸化反応が進行
しやすい液体状態に保持し反応性の出発原料ガス
を処理する方法を提供するものである。
The problem of the present invention is to reduce the oxygen content in the gas by keeping easily oxidizable substances at a temperature lower than the decomposition temperature of the reactive starting material gas and in a liquid state where the oxidation reaction easily progresses. A method of processing a starting material gas is provided.
上記課題を解決するため、本発明は有機金属化
合物を原料として用い−族化合物半導体を気
相成長する気相成長法に於いて、該半導体の処理
或いは該半導体の成長に用いる少なくとも該有機
金属化合物を含む反応性の出発原料ガスを室温な
いし該反応性の出発原料ガスの分解温度より低い
温度に加熱された、アルミニウムあるいはマグネ
シウムから選択される易酸化性金属とGa、In、
Pb、Snから選択される低融点金属との合金融液
に接触させ、該反応性の出発原料ガス中に不純物
として存在する酸素分を、該易酸化性金属の酸化
物として固定し、該反応性の出発原料ガス中より
除去する手段を講じた。
In order to solve the above problems, the present invention provides a vapor phase growth method for growing a - group compound semiconductor using an organometallic compound as a raw material, in which at least the organometallic compound used for processing the semiconductor or growing the semiconductor. A reactive starting material gas containing Ga, In, and an easily oxidizable metal selected from aluminum or magnesium is heated to a temperature ranging from room temperature to a temperature lower than the decomposition temperature of the reactive starting material gas.
The mixture is brought into contact with a liquid alloy of a low melting point metal selected from Pb and Sn, and the oxygen present as an impurity in the reactive starting material gas is fixed as an oxide of the easily oxidizable metal, and the reaction Measures were taken to remove this from the raw material gas.
〔作用〕
本発明は、AlやMgの極めて酸化しやすい物質
に、処理して用いるガスを接触させることにより
ガス中の不純物であるH2O、O2、CO、CO2を除
去する。通常の反応では上記Al、Mgの表面に酸
化膜が形成するため、酸化反応が停止あるいは低
下してしまう。ところで、上記物質を合金化すれ
ば酸化膜の影響が低減化されることとなる。上記
物質とGa、In、Sn、Pbと低融点金属との合金で
は比較的低温で、液体状態となる。液体金属で
は、安定な酸化膜が形成されない。なおAl、Mg
を合金化することなしに高温に加熱しても同様の
効果を期待することが可能であるが、GaAlAsの
成長を考えた場合、原料ガス中のAsH3、TMA
（Al（CH3）3）の分解反応が進行し、GaAlAsの成
長制御が困難となる障害を生じる。[Function] The present invention removes impurities in the gas, such as H 2 O, O 2 , CO, and CO 2 , by bringing a gas used for treatment into contact with substances that are extremely easily oxidized, such as Al and Mg. In a normal reaction, an oxide film is formed on the surfaces of Al and Mg, which causes the oxidation reaction to stop or slow down. By the way, if the above substances are alloyed, the influence of the oxide film will be reduced. Alloys of the above substances, Ga, In, Sn, Pb, and low melting point metals become liquid at relatively low temperatures. Liquid metals do not form stable oxide films. Note that Al, Mg
It is possible to expect a similar effect by heating to high temperatures without alloying, but when considering the growth of GaAlAs, AsH 3 and TMA in the raw material gas
The decomposition reaction of (Al(CH 3 ) 3 ) progresses, creating obstacles that make it difficult to control the growth of GaAlAs.
以下本発明の実施例について説明する。 Examples of the present invention will be described below.
第２図ａは本発明を利用して作られた成長装置
の概略である。従来の第１図のものとの違いは、
反応管内において、本発明の易酸化金属と低融点
金属との合金を入れた合金ボートに出来るだけ近
接し、ガスを第２図ｂに要部を示す如く吹き付け
るようにした点である。 FIG. 2a is a schematic of a growth apparatus made using the present invention. The difference from the conventional one in Figure 1 is:
In the reaction tube, the alloy boat containing the alloy of the easily oxidizable metal and the low melting point metal of the present invention was placed as close as possible, and the gas was blown as shown in FIG. 2b.
第２図においても第１図と同一物には同符号で
示した。 In FIG. 2, the same parts as in FIG. 1 are designated by the same reference numerals.
第２図には反応管１３内にボート２０が配設さ
れ、ボート２０には処理用ガスを吹き付けてガス
中の不純物である酸素分を除去するAl、Mgの易
酸化性金属とGa、In、Sn、Pbの低融点金属との
合金が充填されている。反応管１３内部又は外部
のヒーター１８により加熱されたボート２０内の
合金１９は液体となつており、ガスを吹き付ける
ことにより、液体は流動し、酸化膜は除去されや
すくなつている。加熱温度は例えば合金として
Alが30atomic％のGa−Al（30％）合金を用いる
と約300℃に加熱することにより液体合金となる。
Ga中のAlは選択的に酸化されるのでGa2O3等の
気化しやすい酸化物は生成しない。又目的である
GaAlAsのエピ成長の原料であるAsH3、TMG
（Ga（CH3）3）、TMA（Al（CH3）3）は熱分解反応
には温度が低いので分解することはない。従つて
はぼ原料及びそのキヤリヤーガス中に含まれる
H2O、O2、CO、CO2の酸素は合金中のAlと結合
するためにガス中の酸素分はほぼ完全に除去され
従つて、GaAlAsの特性は酸素が混入されないた
めに著しく向上する。Ga0.7Al0.3Asの結晶の易
動度として、GaAsの約90％以上のものが得られ
るようになつた。又GaAsの成長に於いても、酸
素の低減により、カーボンの混入の程度が低減
し、不純物濃度とした1014cm-3程度のものが得ら
れるようになつた。これは炭素の混入に対して酸
素が重要な作用があるものと考えられ、GaAsの
成長にも有効であることが判つた。 In FIG. 2, a boat 20 is disposed inside the reaction tube 13, and a processing gas is blown onto the boat 20 to remove easily oxidizable metals such as Al and Mg and Ga and In. , Sn, and Pb are filled with alloys with low melting point metals. The alloy 19 in the boat 20 heated by the heater 18 inside or outside the reaction tube 13 is in a liquid state, and by blowing gas, the liquid flows and the oxide film is easily removed. The heating temperature is, for example, as an alloy.
When a Ga-Al (30%) alloy containing 30 atomic % of Al is used, it becomes a liquid alloy by heating to about 300°C.
Since Al in Ga is selectively oxidized, easily vaporized oxides such as Ga 2 O 3 are not generated. It is also a purpose
AsH 3 , TMG, the raw material for epi-growth of GaAlAs
(Ga(CH 3 ) 3 ) and TMA (Al(CH 3 ) 3 ) do not decompose because the temperature is too low for thermal decomposition reactions. Therefore, it is contained in the raw material and its carrier gas.
Since the oxygen in H 2 O, O 2 , CO, and CO 2 combines with Al in the alloy, the oxygen content in the gas is almost completely removed, and the properties of GaAlAs are significantly improved because no oxygen is mixed in. . The mobility of Ga0.7Al0.3As crystals is now approximately 90% higher than that of GaAs. Also, in the growth of GaAs, by reducing oxygen, the degree of carbon incorporation has been reduced, and an impurity concentration of about 10 14 cm -3 can now be obtained. This is thought to be because oxygen has an important effect on carbon contamination, and was found to be effective for GaAs growth as well.
GaAs、GaAlAs等の化合物半導体の成長に適
用する発明であり実施例で合金としてGa−Al合
金を用いたが、Ｐ形のGaAlAsの場合にはGa−
Mg−Al合金を、ｎ形の結晶に対してはGa−Sn
−Al、Sn−Al、Pb−Alの合金を使用すれば良
い。他の物資の気相成長に対して不純物としての
影響を考慮した合金を使用することが可能であ
る。 This invention is applied to the growth of compound semiconductors such as GaAs and GaAlAs, and a Ga-Al alloy was used as the alloy in the examples, but in the case of P-type GaAlAs, Ga-Al
Mg-Al alloy, Ga-Sn for n-type crystal
-Alloys of Al, Sn-Al, and Pb-Al may be used. It is possible to use an alloy that takes into account its influence as an impurity on the vapor phase growth of other substances.
また本実施例ではガス中の酸素分を除去する方
法として、反応管内に溶融合金を置いたが、場合
によつては、ガス配管系の内部あるいは前部に置
設することも可能であり、特に純化装置を通じな
いAsH3ガスやドーピングのためのH2Sガスにつ
いて重点的に脱酸処理することも有効である。
又、上記合金には酸化膜が形成されこれが酸化反
応を低減する作用を成す。従つて、反応ガスを吹
き付けるだけでは合金表面に形成される酸化膜を
除去するのに不十分であるような場合には積極的
に、機械的に合金融液を撹拌もしくは、融液上面
に形成された酸化膜をスクイズし、常時合金の清
浄面を与えるようにすることは、本発明の作用を
より有効にすることが出来る。 Furthermore, in this example, the molten alloy was placed inside the reaction tube as a method for removing oxygen from the gas, but depending on the case, it is also possible to place it inside or in front of the gas piping system. In particular, it is effective to intensively deoxidize AsH 3 gas and H 2 S gas for doping, which do not pass through a purification device.
Further, an oxide film is formed on the above alloy, and this serves to reduce oxidation reactions. Therefore, if spraying reactive gas is insufficient to remove the oxide film formed on the alloy surface, actively stir the alloy alloy liquid mechanically or remove the oxide film formed on the top surface of the melt. The action of the present invention can be made more effective by squeezing the oxidized film so that the alloy always has a clean surface.
本発明の態様は以下のとおりである。 Aspects of the present invention are as follows.
１ Ga又はIn、Pb、Snの低融点金属とアルミニ
ウム（Al）あるいはマグネシウム（Mg）との
合金を室温又は室温から約500℃程度の温度に
加熱し、半導体処理あるいは半導体成長に用い
る、H2、Ar、He、N2のキヤリヤガス或いは
AsH3、H2S、Ga（CH3）3、Al（CH3）3、Zn
（CH3）2の反応性のガスを接触させて該ガス中
に不純物として存在する酸素分を、Al又はMg
の酸化物として固定し、該ガス中より除去する
方法。1 An alloy of Ga or a low melting point metal such as In, Pb, or Sn and aluminum (Al) or magnesium (Mg) is heated to room temperature or a temperature of about 500°C from room temperature, and used for semiconductor processing or semiconductor growth . , Ar, He, N2 carrier gas or
AsH3 , H2S , Ga( CH3 ) 3 , Al( CH3 ) 3 , Zn
(CH 3 ) 2 reactive gas is brought into contact with the oxygen present as an impurity in the gas to remove Al or Mg.
A method of fixing the gas as an oxide and removing it from the gas.
２ 上記低融点金属と、Al又はMgとの合金を溶
融状態として、酸素分を不純物として含むガス
を接触させる方法。2. A method in which an alloy of the above-mentioned low melting point metal and Al or Mg is brought into a molten state and brought into contact with a gas containing oxygen as an impurity.
３ 上記溶融状態の合金上に生成したAl、Mgの
酸化物の表面形成物を該溶融金属を撹拌もしく
は表面をスクイズして、除去しつつ、半導体処
理用ガスを接触せしめる方法。3. A method in which surface formations of Al and Mg oxides formed on the above-mentioned molten alloy are removed by stirring the molten metal or squeezing the surface, while bringing the semiconductor processing gas into contact with the molten metal.
４ トリメチルガリウム、トルメチルアルミニウ
ムの族元素の有機金属化合物と、AsH3、
PH3等の族元素の水素化物を用いて−族
化合物半導体を熱分解して気相成長する成長法
に於いて、ガスを上記方法で処理する。4 Organometallic compound of trimethylgallium, tolumethylaluminum group element, AsH 3 ,
In a growth method in which a - group compound semiconductor is thermally decomposed using a hydride of a group element such as PH 3 for vapor phase growth, the gas is treated by the above method.
本発明の超高純度ガス処理法により下記効果が
得られる。
The ultra-high purity gas processing method of the present invention provides the following effects.
１ ガス中の酸素分をほぼ完全に除去することが
可能である。1 It is possible to almost completely remove oxygen from the gas.
２ 酸素分除去の効果を持続的に利用出来る。2. The effect of oxygen removal can be used sustainably.
３ 酸素を結合しやすい物質とそれと混合する物
質を選ぶことにより反応性の出発原料ガス自体
には何ら悪影響を与えることはない。3. By selecting a substance that easily binds oxygen and a substance to be mixed with it, there will be no adverse effect on the reactive starting material gas itself.
４ 良質のAlあるいはMgを含みかつ酸素の混入
が障害となる物質の気相処理が可能である。4. It is possible to perform gas phase treatment of substances that contain high-quality Al or Mg and where oxygen contamination is a problem.
５ 良質のGaAlAsの気相エピ成長が可能であ
る。5. Vapor phase epitaxial growth of high quality GaAlAs is possible.
第１図は従来の気相成長装置を説明する図、第
２図は本発明の実施例に係わる気相成長装置を説
明する図である。
１：配管、２：ガス流量制御装置、３：Ga
（CH3）3バブラー、４：Al（CH3）3バブラー、５：
Zn（CH3）2バブラー、６：バルブ、７：H2S＋H2
ボンベ、８：AsH3＋H2ボンベ、９：Pd水素精
製装置、１０：調圧器、１１：基板、１２：シー
リング、１３：反応管、１４：高周波コイル、１
５：カーボンサセプター、１６：廃ガス処理部、
１７：キヤリヤーH2、１８：ヒーター、１９：
低融点金属と易酸化性金属との合金、２０：ボー
ト、２１：ガスノズル部、：ガス供給部、：
ガス配管系、：反応部。
FIG. 1 is a diagram for explaining a conventional vapor phase growth apparatus, and FIG. 2 is a diagram for explaining a vapor phase growth apparatus according to an embodiment of the present invention. 1: Piping, 2: Gas flow control device, 3: Ga
(CH 3 ) 3 bubbler, 4: Al(CH 3 ) 3 bubbler, 5:
Zn (CH 3 ) 2 bubblers, 6: valves, 7: H 2 S+H 2
Cylinder, 8: AsH 3 + H 2 cylinder, 9: Pd hydrogen purifier, 10: Pressure regulator, 11: Substrate, 12: Sealing, 13: Reaction tube, 14: High frequency coil, 1
5: Carbon susceptor, 16: Waste gas treatment section,
17: Carrier H 2 , 18: Heater, 19:
Alloy of low melting point metal and easily oxidizable metal, 20: Boat, 21: Gas nozzle part, : Gas supply part, :
Gas piping system: Reaction section.
Claims (1)
合物半導体を気相成長する気相成長法に於いて、
該半導体の処理或いは該半導体の成長に用いる少
なくとも該有機金属化合物を含む反応性の出発原
料ガスを室温ないし該反応性の出発原料ガスの分
解温度より低い温度に加熱された、アルミニウム
あるいはマグネシウムから選択される易酸化性金
属とGa、In、Pb、Snから選択される低融点金属
との合金融液に接触させ、該反応性の出発原料ガ
ス中に不純物として存在する酸素分を、該易酸化
性金属の酸化物として固定し、該反応性の出発原
料ガス中より除去することを特徴とする気相成長
方法。 ２ 上記出発原料ガスがAsH3、H2S、Ga
（CH3）3、Al（CH3）3、Zn（CH3）2を含むことを特
徴とする特許請求の範囲第１項記載の気相成長方
法。 ３ 上記−族化合物半導体がAlを構成元素
として含むことを特徴とする特許請求の範囲第１
項記載の気相成長方法。[Claims] 1. In a vapor phase growth method for growing a - group compound semiconductor in a vapor phase using an organometallic compound as a raw material,
A reactive starting material gas containing at least the organometallic compound used for processing the semiconductor or growing the semiconductor is selected from aluminum or magnesium heated to a temperature ranging from room temperature to a temperature lower than the decomposition temperature of the reactive starting material gas. The easily oxidized metal and the low melting point metal selected from Ga, In, Pb, and Sn are brought into contact with a liquid mixture to remove the oxygen present as an impurity in the reactive starting material gas. A vapor phase growth method characterized in that the reactive metal is fixed as an oxide and removed from the reactive starting material gas. 2 The above starting material gas is AsH 3 , H 2 S, Ga
The vapor phase growth method according to claim 1, characterized in that it contains (CH 3 ) 3 , Al(CH 3 ) 3 , and Zn(CH 3 ) 2 . 3. Claim 1, wherein the - group compound semiconductor contains Al as a constituent element.
Vapor phase growth method described in section.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56154635A JPS5856324A (en) | 1981-09-29 | 1981-09-29 | Vapor phase growth |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56154635A JPS5856324A (en) | 1981-09-29 | 1981-09-29 | Vapor phase growth |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5856324A JPS5856324A (en) | 1983-04-04 |
| JPH0347728B2 true JPH0347728B2 (en) | 1991-07-22 |
Family
ID=15588505
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56154635A Granted JPS5856324A (en) | 1981-09-29 | 1981-09-29 | Vapor phase growth |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5856324A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7968362B2 (en) | 2001-03-27 | 2011-06-28 | Ricoh Company, Ltd. | Semiconductor light-emitting device, surface-emission laser diode, and production apparatus thereof, production method, optical module and optical telecommunication system |
| JP4749792B2 (en) * | 2005-08-03 | 2011-08-17 | 国立大学法人東京農工大学 | Method for producing aluminum group III nitride crystal and crystal laminated substrate |
-
1981
- 1981-09-29 JP JP56154635A patent/JPS5856324A/en active Granted
Non-Patent Citations (2)
| Title |
|---|
| APPL PHYS LETT * |
| JAPAN J APPL PHYS * |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5856324A (en) | 1983-04-04 |
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