JPH0347962A - Forming device for thin film - Google Patents

Abstract

PURPOSE:To form a thin film having uniform thickness in the wide range of a sample with a simple constitution by forming a long hole on the wall surface of a vacuum vessel and performing transfer of a target only by both turning of a rotary flange and transfer of a moving base. CONSTITUTION:A long hole 12 is formed on the wall surface of a vacuum vessel 11 so that it is spread over both sides of an orbit 9 on which a sample is transferred. A plunger unit 21 provided on a supporting member 17a of a transfer base 17 is engaged with the positioning groove 19 of a rotary flange 10. The transfer base 17 is moved and the rotary flange 10 is fixed to the vacuum vessel 11 to start film forming operation. When a film is formed on a large sample, the transfer base 17 is moved to the right and engagement of the groove 19 and the plunger unit 21 is released. The rotary flange 10 is turned and the groove 20 of the rotary flange 10 is engaged with the plunger unit 21. The transfer base 17 is again moved to the vacuum vessel 11 side and the rotary flange 10 is fixed to the vacuum vessel 11.

Description

[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a thin film forming apparatus using a sputtering method, and is particularly suitable for obtaining a uniform film thickness distribution over a wide range of a sample surface. Regarding a thin film forming apparatus for development.

[Conventional technology]

Conventionally, as this type of thin film forming apparatus for research and development, as shown in FIG. 5 as an example of its basic configuration, targets 41 are mounted on a plurality of, in this case two, opposing electrodes fixed to a vacuum container. .42, in which the sample 3 moves along the trajectory 9 and a thin film is deposited on the surface of the sample 3. The purpose of moving the sample is to form a film with a uniform thickness in the direction of movement.

[Problem to be solved by the invention]

However, since the uniform film forming range in such a thin film forming apparatus is mainly determined by the target size, a target much larger than the sample is required to form a uniform thin film over a wide area of the sample surface. For example, if the sample is a wafer with a diameter of 6 inches, a target with a diameter of about 12 inches is required.

Further, in the case of a thin film forming apparatus for research and development, the size of the sample is not necessarily constant. For this reason, a target and a target electrode system on which the target is placed were prepared in advance assuming the maximum sample size. Therefore, it is normally used. Even for smaller sample sizes, unnecessarily large targets were used. For this reason, when a precious metal such as platinum is used as a target material, economical problems arise when operating the equipment, and the target electrode system is quite heavy, so moving the target electrode requires crane work. Worker 2Å
This involved a lot of work, requiring a huge amount of money and time.

Claims (1)

[Claims] 1) A gas introduced into a vacuum vessel is transferred between a sample electrode that moves along a predetermined trajectory within the vacuum vessel and a counter electrode whose relative position with respect to the vacuum vessel is fixed. In a thin film forming apparatus, the target placed on the counter electrode is sputtered to form a thin film on the surface of the sample placed on the sample electrode. a disc-shaped rotating flange in which a long hole is formed spanning both sides of a trajectory along which the electrode moves, a hole with a larger diameter than the target is formed in an eccentric position, and a counter electrode is attached to the hole position; 1. A thin film forming apparatus comprising target moving means that supports a rotary flange rotatably around a central axis and includes a moving table movable in a direction perpendicular to the surface of the rotary flange. 2) converting the gas introduced into the vacuum container into plasma by electrical discharge between a sample electrode that moves along a predetermined trajectory within the vacuum container and a counter electrode whose relative position to the vacuum container is fixed; In a thin film forming apparatus that sputters a target placed on the counter electrode to form a thin film on the surface of the sample placed on the sample electrode, a trajectory along which the sample electrode moves is formed on the wall surface of the vacuum chamber on the side of the counter electrode. A disc-shaped rotating flange is formed with a round hole extending over both sides, a hole with a larger diameter than the target is formed at an eccentric position, and a counter electrode is attached to the hole position, and a round hole of the vacuum vessel is formed. a rotary seal mechanism that is attached to the vacuum container surrounding the rotary flange in a ring shape, rotatably supports the rotary flange around a central axis, and airtightly seals between the rotary flange and the circumference of the circular hole of the vacuum container; A thin film forming apparatus characterized by comprising a target moving means.