JPH0350186A - Intrinsic gettering method - Google Patents
Intrinsic gettering methodInfo
- Publication number
- JPH0350186A JPH0350186A JP18260189A JP18260189A JPH0350186A JP H0350186 A JPH0350186 A JP H0350186A JP 18260189 A JP18260189 A JP 18260189A JP 18260189 A JP18260189 A JP 18260189A JP H0350186 A JPH0350186 A JP H0350186A
- Authority
- JP
- Japan
- Prior art keywords
- oxygen
- epitaxial growth
- wafer
- heat treatment
- intrinsic gettering
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 18
- 238000005247 gettering Methods 0.000 title claims abstract description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 28
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 28
- 239000001301 oxygen Substances 0.000 claims abstract description 28
- 238000010438 heat treatment Methods 0.000 claims abstract description 24
- 238000001556 precipitation Methods 0.000 claims description 10
- 239000000758 substrate Substances 0.000 abstract description 7
- 230000007547 defect Effects 0.000 abstract description 4
- 238000000151 deposition Methods 0.000 abstract 3
- 238000003475 lamination Methods 0.000 abstract 2
- 230000006911 nucleation Effects 0.000 description 10
- 238000010899 nucleation Methods 0.000 description 10
- 235000012431 wafers Nutrition 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000002244 precipitate Substances 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野］
本発明は、エピタキシャルウェハのイントリンジック・
ゲッタリング方法に関する。[Detailed Description of the Invention] [Field of Industrial Application] The present invention is directed to the intrinsic
Regarding gettering methods.
イントリンジック・ゲッタリングはシリコン基板内に溶
解している酸素を部分的に析出させ、その周囲に発生す
るひずみ場によって表面近傍に存在する重金属汚染を吸
収してしまう方法である。Intrinsic gettering is a method in which oxygen dissolved in a silicon substrate is partially precipitated, and heavy metal contamination present near the surface is absorbed by the strain field generated around the precipitate.
従来エピタキシャルウェハのイントリンジック・ゲッタ
リング処理は第２図に工程図を示すように、エピタキシ
ャル成長の後にデニューデッド・ゾーン形成熱処理（約
１１００℃で約２時間）及び酸素析出核形成熱処理（約
８００℃で約１０時間）を行っていた。Conventional intrinsic gettering treatment for epitaxial wafers, as shown in the process diagram in Figure 2, involves epitaxial growth followed by denuded zone formation heat treatment (approximately 1100°C for approximately 2 hours) and oxygen precipitation nucleation heat treatment (approximately 2 hours). (at 800°C for about 10 hours).
第３図はこのような酸素析出核形成処理時間と格子間酸
素減少量Δｏｉ （ｐｐｍ）との関係を示すものである
。酸素減少量ΔＯｉ （ｐｐｍ）はＡＳＴＭＦ１２１−
７９に示されているＦＴＩＲ（赤外吸収量）による測定
値である。FIG. 3 shows the relationship between the oxygen precipitation nucleation treatment time and the interstitial oxygen reduction amount Δoi (ppm). The amount of oxygen reduction ΔOi (ppm) is determined by ASTM F121-
This is a measurement value by FTIR (infrared absorption) shown in No. 79.
以上のように、従来の方法ではエピタキシャル成長後に
イントリンジック・ゲッタリングのために約１２時間も
の熱処理を行っており、これにより、エピタキシャルウ
ェハにスリップや積層欠陥が多く発生していた。As described above, in the conventional method, heat treatment is performed for about 12 hours for intrinsic gettering after epitaxial growth, and as a result, many slips and stacking faults occur in the epitaxial wafer.
エピタキシャル層はその中に含まれる酸素濃度が１ｘｌ
ｏ１５／ｃｍ３程度と小さい、しかし従来エピタキシャ
ル成長工程の後に長時間の熱処理を行うため、このとき
サブストレートウェハから酸素が拡散によって浸入し欠
陥が生ずる。このようなサブストレートウェハからの酸
素拡散がなげれば酸素の析出が生じることはない。The epitaxial layer has an oxygen concentration of 1xl.
Although the size is small, on the order of 015/cm3, since a long time heat treatment is conventionally performed after the epitaxial growth process, oxygen infiltrates from the substrate wafer by diffusion and causes defects. If such oxygen diffusion from the substrate wafer is suppressed, oxygen precipitation will not occur.
本発明はエピタキシャルウェハにスリップや積層欠陥を
生ずるような熱処理を行わない方法を提供することを目
的とする。An object of the present invention is to provide a method that does not perform heat treatment on epitaxial wafers that would cause slips or stacking faults.
〔課題を解決するための手段］
本発明は、デニューデッド・ゾーン形成のための１１０
０℃付近での熱処理に代り、エピタキシャル成長の前に
７５０〜９００℃での熱処理を行い、酸素析出核を形成
することを特徴とするイントリンジック・ゲッタリング
方法である。[Means for Solving the Problems] The present invention provides 110 points for forming a denuded zone.
This is an intrinsic gettering method characterized by performing heat treatment at 750 to 900°C before epitaxial growth to form oxygen precipitation nuclei instead of heat treatment at around 0°C.
〔作用１
本発明はデニューデッド・ゾーン形成熱処理を省略する
と共に、酸素析出核形成処理をエピタキシャル成長前に
実施することにより構成される。[Operation 1] The present invention is constructed by omitting the denuded zone formation heat treatment and performing the oxygen precipitation nucleation treatment before epitaxial growth.
第１図はこれを示すものである。エピタキシャル成長前
に予め酸素析出核形成熱処理を行っておけば、エピタキ
シャル成長時の熱処理中にエピタキシャル層にサブスト
レートウェハから酸素の拡散があっても、エピタキシャ
ル層内には酸素析出核が形成されることはなく、後のデ
バイス工程においてもエピタキシャル層内には酸素の析
出は生じることはない。FIG. 1 shows this. If oxygen precipitate nucleation heat treatment is performed before epitaxial growth, even if oxygen diffuses into the epitaxial layer from the substrate wafer during the heat treatment during epitaxial growth, oxygen precipitate nuclei will not be formed in the epitaxial layer. Therefore, no oxygen is precipitated in the epitaxial layer even in the subsequent device process.
本発明では酸素析出核形成はエピタキシャル成長工程の
前に予め行い、エピタキシャル成長工程の後のデニュー
デッド・ゾーン形成熱処理を省略する。第４図は本発明
のエピタキシャル成長工程前の酸素析出核形成熱処理に
よるΔＯ１を示すもので、第４図に示すように約４時間
でその効果が現われる。また、第５図に示すように本発
明の酸素析出核形成熱処理は７５０〜９００℃で効果が
大きく、７５０℃未満９００℃を越える区域では効果が
少ないので、この温度範囲に限定する。In the present invention, oxygen precipitation nuclei are formed in advance before the epitaxial growth process, and the denuded zone formation heat treatment after the epitaxial growth process is omitted. FIG. 4 shows ΔO1 due to the oxygen precipitation nucleation heat treatment before the epitaxial growth process of the present invention, and as shown in FIG. 4, the effect appears in about 4 hours. Further, as shown in FIG. 5, the oxygen precipitation nucleation heat treatment of the present invention is most effective at temperatures of 750 to 900°C, and is less effective in the region below 750°C and above 900°C, so it is limited to this temperature range.
〔実施例１
本発明を実施した例を第１図に示す、これによって熱処
理の時間がエピタキシャル成長を含めて５時間に短縮さ
れる。第２図は従来の高品質のデバイスを得るための従
来の工程である。熱処理時間は１２時間に及ぶ。[Example 1] An example in which the present invention was implemented is shown in FIG. 1. As a result, the heat treatment time including epitaxial growth was shortened to 5 hours. FIG. 2 is a conventional process for obtaining conventional high quality devices. The heat treatment time was 12 hours.
実施例と従来法による比較例の製品の欠陥を第１表に示
した。第１表に見られるように、スリップと積層欠陥は
従来例よりも減少している。Table 1 shows defects in the products of Examples and Comparative Examples made by the conventional method. As seen in Table 1, slip and stacking faults are reduced compared to the conventional example.
第 １ 表
Ｅ発明の効果ｊ
本発明は全体の熱処理時間が短縮することによりイント
リンジック・ゲッタリングを施したエピタキシャルウェ
ハのスリップと積層欠陥を減少させる効果を奏する。Table 1 E Effects of the Invention j The present invention has the effect of reducing slip and stacking faults in epitaxial wafers subjected to intrinsic gettering by shortening the overall heat treatment time.
第１図は本発明の実施例の工程図、第２図は従来の工程
図、第３図は従来の酸素核形成熱処理のグラフ、第４図
は実施例の酸素核形成熱処理のグラフ、第５図は酸素核
形成熱処理温度の適正範囲を示すグラフである。
１・・−サブストレートウェハ
２・・・酸素析出核形成熱処理
３・・・エピタキシャル成長
４・・・デバイス工程
１１・・・従来のデニューデッド・ゾーン形成熱処理Fig. 1 is a process diagram of an embodiment of the present invention, Fig. 2 is a conventional process diagram, Fig. 3 is a graph of conventional oxygen nucleation heat treatment, Fig. 4 is a graph of oxygen nucleation heat treatment of the embodiment, FIG. 5 is a graph showing the appropriate range of oxygen nucleation heat treatment temperature. 1...-Substrate wafer 2... Oxygen precipitation nucleation heat treatment 3... Epitaxial growth 4... Device process 11... Conventional denuded zone formation heat treatment
Claims (1)
処理を行い、酸素析出核を形成することを特徴とするイ
ントリンジック・ゲッタリング方法。1. An intrinsic gettering method characterized by performing heat treatment at 750 to 900° C. before epitaxial growth to form oxygen precipitation nuclei.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18260189A JPH0350186A (en) | 1989-07-17 | 1989-07-17 | Intrinsic gettering method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18260189A JPH0350186A (en) | 1989-07-17 | 1989-07-17 | Intrinsic gettering method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0350186A true JPH0350186A (en) | 1991-03-04 |
Family
ID=16121141
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18260189A Pending JPH0350186A (en) | 1989-07-17 | 1989-07-17 | Intrinsic gettering method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0350186A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10229093A (en) * | 1997-02-17 | 1998-08-25 | Sumitomo Sitix Corp | Method for manufacturing silicon epitaxial wafer |
| JP2002076006A (en) * | 2000-08-31 | 2002-03-15 | Mitsubishi Materials Silicon Corp | Method of manufacturing epitaxial wafer and epitaxial wafer manufactured by the method |
| US6641888B2 (en) | 1999-03-26 | 2003-11-04 | Sumitomo Mitsubishi Silicon Corporation | Silicon single crystal, silicon wafer, and epitaxial wafer. |
| US6878451B2 (en) | 1999-07-28 | 2005-04-12 | Sumitomo Mitsubishi Silicon Corporation | Silicon single crystal, silicon wafer, and epitaxial wafer |
| EP0954018A4 (en) * | 1996-12-03 | 2006-07-19 | Sumitomo Mitsubishi Silicon | PROCESS FOR PRODUCING A SILICON SEMICONDUCTOR EPITAXY WAFER AND A SEMICONDUCTOR DEVICE |
| JP2006332689A (en) * | 2006-07-10 | 2006-12-07 | Sumco Corp | Method of manufacturing silicon epitaxial wafer |
-
1989
- 1989-07-17 JP JP18260189A patent/JPH0350186A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0954018A4 (en) * | 1996-12-03 | 2006-07-19 | Sumitomo Mitsubishi Silicon | PROCESS FOR PRODUCING A SILICON SEMICONDUCTOR EPITAXY WAFER AND A SEMICONDUCTOR DEVICE |
| JPH10229093A (en) * | 1997-02-17 | 1998-08-25 | Sumitomo Sitix Corp | Method for manufacturing silicon epitaxial wafer |
| US6641888B2 (en) | 1999-03-26 | 2003-11-04 | Sumitomo Mitsubishi Silicon Corporation | Silicon single crystal, silicon wafer, and epitaxial wafer. |
| US6878451B2 (en) | 1999-07-28 | 2005-04-12 | Sumitomo Mitsubishi Silicon Corporation | Silicon single crystal, silicon wafer, and epitaxial wafer |
| JP2002076006A (en) * | 2000-08-31 | 2002-03-15 | Mitsubishi Materials Silicon Corp | Method of manufacturing epitaxial wafer and epitaxial wafer manufactured by the method |
| JP2006332689A (en) * | 2006-07-10 | 2006-12-07 | Sumco Corp | Method of manufacturing silicon epitaxial wafer |
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