JPH035050B2 - - Google Patents
Info
- Publication number
- JPH035050B2 JPH035050B2 JP60030805A JP3080585A JPH035050B2 JP H035050 B2 JPH035050 B2 JP H035050B2 JP 60030805 A JP60030805 A JP 60030805A JP 3080585 A JP3080585 A JP 3080585A JP H035050 B2 JPH035050 B2 JP H035050B2
- Authority
- JP
- Japan
- Prior art keywords
- hydrogen
- molecular beam
- beam source
- crucible
- shielding plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/22—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using physical deposition, e.g. vacuum deposition or sputtering
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/36—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done before the formation of the materials
- H10P14/3602—In-situ cleaning
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は分子線エピタキシ装置に関し、特に
分子線源を清浄化するために分子線源るつぼを水
素加熱できるようにしたものに関するものであ
る。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a molecular beam epitaxy apparatus, and more particularly to one in which a molecular beam source crucible can be heated with hydrogen in order to clean the molecular beam source.
第２図は従来の分子線エピタキシ装置を示す。
図において、１は分子線源、８は分子線源１を収
納する分子線源るつぼ、６は該分子線源るつぼ８
を加熱するヒータ、５は該ヒータ６の外周に設け
られた熱放射遮蔽板、７はるつぼ８の外側底面に
取付けられた熱電対、４は基板ホルダ、２は成長
室、３は水素導入バルブ、９はイオンポンプであ
る。
FIG. 2 shows a conventional molecular beam epitaxy apparatus.
In the figure, 1 is a molecular beam source, 8 is a molecular beam source crucible that houses the molecular beam source 1, and 6 is the molecular beam source crucible 8.
5 is a thermal radiation shielding plate provided on the outer periphery of the heater 6, 7 is a thermocouple attached to the outer bottom surface of the crucible 8, 4 is a substrate holder, 2 is a growth chamber, 3 is a hydrogen introduction valve , 9 is an ion pump.
このような構成の装置において、分子線源るつ
ぼ８をヒータ６により加熱すると、該るつぼ８内
の分子線源１が加熱蒸発して分子線が基板ホルダ
４の方向に放射され、これにより基板ホルダ４に
保持された基板（図示せず）上に薄膜がエピタキ
シヤル成長される。 In an apparatus having such a configuration, when the molecular beam source crucible 8 is heated by the heater 6, the molecular beam source 1 in the crucible 8 is heated and evaporated, and the molecular beam is emitted in the direction of the substrate holder 4. A thin film is epitaxially grown on a substrate (not shown) held at 4.
このような従来の分子線エピタキシ装置におい
て、分子線源１に対し水素加熱処理を行う場合
は、成長室２内に水素導入バルブ３より水素を導
入して成長室２を水素で充満した状態で水素加熱
処理を行つていた。 In such a conventional molecular beam epitaxy apparatus, when performing hydrogen heat treatment on the molecular beam source 1, hydrogen is introduced into the growth chamber 2 from the hydrogen introduction valve 3 to fill the growth chamber 2 with hydrogen. Hydrogen heat treatment was performed.
従来の分子線エピタキシ装置は以上のように構
成されているが、この従来装置で水素加熱処理を
行う場合は、第２図に示す如く、成長室２全体が
10-5torr程度の真空度になる量の水素で充満され
るので、成長室２内壁及び基板ホルダ４、分子線
るつぼ８等の成長室２内の部材と水素との衝突に
より、水素以外の不純物ガスが放出され、水素劣
化し、分子線源１が汚染され、その結果エピタキ
シヤル成長膜の特性、表面状態が悪化するという
欠点があつた。また水素熱処理後、水素を排気す
るのに多大の時間を要するという欠点もあつた。
The conventional molecular beam epitaxy apparatus is configured as described above, but when performing hydrogen heat treatment with this conventional apparatus, the entire growth chamber 2 is closed, as shown in FIG.
Since it is filled with hydrogen in an amount that creates a vacuum level of about 10 -5 torr, hydrogen collides with the inner wall of the growth chamber 2, the substrate holder 4, the molecular beam crucible 8, and other members in the growth chamber 2, causing the release of other substances than hydrogen. There was a drawback that impurity gas was released, hydrogen deteriorated, and the molecular beam source 1 was contaminated, resulting in deterioration of the characteristics and surface condition of the epitaxially grown film. Another drawback was that it took a long time to exhaust the hydrogen after the hydrogen heat treatment.
この発明は上記のような従来のものの欠点を除
去するためになされたもので、成長室の真空度を
水素導入により悪くすることなく高純度水素によ
り加熱処理できる分子線エピタキシ装置を提供す
ることを目的としている。 This invention was made in order to eliminate the drawbacks of the conventional devices as described above, and aims to provide a molecular beam epitaxy device that can perform heat treatment using high-purity hydrogen without impairing the degree of vacuum in the growth chamber due to the introduction of hydrogen. The purpose is
〔問題点を解決するための手段〕
この発明に係る分子線エピタキシ装置は、分子
線源るつぼに、分子線源のみに水素を直接照射で
きる水素導入パイプと、その水素導入口に分子線
源ビームが付着するのを防止する遮蔽板とを設け
たものである。[Means for Solving the Problems] The molecular beam epitaxy apparatus according to the present invention includes a molecular beam source crucible, a hydrogen inlet pipe that can directly irradiate hydrogen only to the molecular beam source, and a molecular beam source crucible in the hydrogen inlet. A shielding plate is provided to prevent the adhesion of
この発明においては、水素は水素導入パイプに
より分子線源のみに直接照射されるから、成長室
の真空度は水素導入により悪化することはなく、
高純度水素により加熱処理ができる。またその際
分子線源からの分子線源ビームは遮蔽板により遮
蔽されて水素導入パイプの水素導入口に付着する
ことはない。
In this invention, since hydrogen is directly irradiated only to the molecular beam source through the hydrogen introduction pipe, the degree of vacuum in the growth chamber is not deteriorated by the introduction of hydrogen.
Heat treatment can be performed using high-purity hydrogen. Further, at this time, the molecular beam source beam from the molecular beam source is shielded by the shielding plate and does not adhere to the hydrogen inlet of the hydrogen inlet pipe.
以下、この発明の一実施例を第１図を用いて説
明する。
An embodiment of the present invention will be described below with reference to FIG.
第１図において、第２図と同一符号は同一部分
を示し、１０は分子線源るつぼ８内の分子線に水
素を直線照射するための水素導入パイプ、１２は
その水素導入口、１５は成長室２外に設けられた
水素導入管、３は該水素導入管１５に設けられた
水素導入バルブ、１４は成長室２内で水素導入管
１５と水素導入パイプ１０とをつなぐベローズ、
１１は分子線源からの分子線源ビームが上記水素
導入口１１に付着するのを防止する遮蔽板であ
り、これは箱状体の下面部１１ａに開口１１ｂを
設けて構成されている。 In FIG. 1, the same reference numerals as in FIG. 2 indicate the same parts, 10 is a hydrogen introduction pipe for linearly irradiating the molecular beam with hydrogen in the molecular beam source crucible 8, 12 is the hydrogen introduction port, and 15 is the growth A hydrogen introduction pipe provided outside the chamber 2; 3 a hydrogen introduction valve provided in the hydrogen introduction pipe 15; 14 a bellows connecting the hydrogen introduction pipe 15 and the hydrogen introduction pipe 10 within the growth chamber 2;
Reference numeral 11 denotes a shielding plate for preventing the molecular beam source beam from the molecular beam source from adhering to the hydrogen inlet 11, and this is constructed by providing an opening 11b in the lower surface portion 11a of a box-shaped body.
次に動作について説明する。 Next, the operation will be explained.
本装置の水素加熱処理を行うには、あらかじめ
昇温された分子線源１に対し水素バルブ３を開
き、水素をベローズ１４を通して水素導入パイプ
１０より導入する。水素は、図中矢印で示すよう
に遮蔽板１１の下面部１１ａに一度衝突した後、
分子線源１に照射される。分子線源１からのビー
ムはすべて遮蔽板１１の下面部１１ａに付着し、
該分子線源ビームが水素導入口１２に付着するこ
とはなく、分子線源の清浄化に悪影響を及ぼすこ
とはない。このときの水素導入量は成長室２内の
真空度が10-8torr台になる程度であり、従来方式
の千分の１で、分子線源の清浄化が可能であつ
た。 To perform the hydrogen heat treatment of this apparatus, the hydrogen valve 3 is opened to the molecular beam source 1 whose temperature has been raised in advance, and hydrogen is introduced from the hydrogen introduction pipe 10 through the bellows 14. After the hydrogen collides once with the lower surface portion 11a of the shielding plate 11 as shown by the arrow in the figure,
The molecular beam source 1 is irradiated. All the beams from the molecular beam source 1 adhere to the lower surface 11a of the shielding plate 11,
The molecular beam source beam does not adhere to the hydrogen inlet 12 and does not adversely affect the cleaning of the molecular beam source. At this time, the amount of hydrogen introduced was such that the degree of vacuum in the growth chamber 2 was on the order of 10 -8 torr, and it was possible to clean the molecular beam source with one-thousandth of that of the conventional method.
また水素処理完了後は水素バルブ３を閉じ、水
素導入パイプ１０及び遮蔽板１１を真空容器外か
ら回転導入端子１３を介して回転させ、本装置の
エピタキシ動作において該遮蔽板１１が分子線源
ビームを遮蔽しない位置に移動させる。 After the hydrogen treatment is completed, the hydrogen valve 3 is closed, and the hydrogen introduction pipe 10 and shielding plate 11 are rotated from outside the vacuum vessel via the rotational introduction terminal 13. During the epitaxy operation of this apparatus, the shielding plate 11 is connected to the molecular beam source. Move it to an unobstructed position.
このような本実施例装置では、成長室の真空度
を悪くすることなく、分子線源１を高純度水素に
より加熱処理することができ、分子線エピタキシ
ヤル法によるエピタキシヤル膜の特性、表面状態
を向上できる。 In the apparatus of this embodiment, the molecular beam source 1 can be heat-treated with high-purity hydrogen without deteriorating the vacuum level of the growth chamber, and the characteristics and surface condition of the epitaxial film obtained by the molecular beam epitaxial method can be improved. can be improved.
以上のように、この発明にかかる分子線エピタ
キシ装置によれば、分子線源のみに水素を直接照
射できる水素導入パイプと、その水素導入口に分
子線源ビームが付着するのを防止する遮蔽板とを
設けたから、成長室の真空度を水素導入により悪
くすることなく、高純度水素により加熱処理で
き、エピタキシヤル膜の特性を向上できる効果が
ある。
As described above, the molecular beam epitaxy apparatus according to the present invention includes a hydrogen introduction pipe that can directly irradiate only the molecular beam source with hydrogen, and a shielding plate that prevents the molecular beam source beam from adhering to the hydrogen introduction port. Since this is provided, heat treatment can be performed using high-purity hydrogen without impairing the vacuum degree of the growth chamber due to the introduction of hydrogen, which has the effect of improving the characteristics of the epitaxial film.
第１図は本発明の一実施例による分子線エピタ
キシ装置の断面図、第２図は従来の分子線エピタ
キシ装置の断面図である。
図中、１は分子線源、２は成長室、３は水素導
入バルブ、４は基板ホルダ、５は熱放射遮蔽板、
６はヒータ、７は熱電対、８は分子線源るつぼ、
９はイオンポンプ、１０は水素導入パイプ、１１
は遮蔽板、１２は水素導入口、１３は回転導入
器、１４はベローズ、１５は水素導入管である。
なお図中同一符号は同一又は相当部分を示す。
FIG. 1 is a sectional view of a molecular beam epitaxy apparatus according to an embodiment of the present invention, and FIG. 2 is a sectional view of a conventional molecular beam epitaxy apparatus. In the figure, 1 is a molecular beam source, 2 is a growth chamber, 3 is a hydrogen introduction valve, 4 is a substrate holder, 5 is a thermal radiation shielding plate,
6 is a heater, 7 is a thermocouple, 8 is a molecular beam source crucible,
9 is an ion pump, 10 is a hydrogen introduction pipe, 11
12 is a shielding plate, 12 is a hydrogen inlet, 13 is a rotating introducer, 14 is a bellows, and 15 is a hydrogen inlet pipe.
Note that the same reference numerals in the figures indicate the same or equivalent parts.
Claims (1)
収納する分子線源るつぼと、該分子線源るつぼ内
の分子線源に水素ガスを照射するための水素導入
パイプと、該水素導入パイプによる水素照射時に
その水素導入口を分子線源ビームが付着するのを
防止する遮蔽板とを備えたことを特徴とする分子
線エピタキシ装置。1. In a molecular beam epitaxy apparatus, a molecular beam source crucible that houses a molecular beam source, a hydrogen introduction pipe for irradiating the molecular beam source in the molecular beam source crucible with hydrogen gas, and a A molecular beam epitaxy apparatus comprising: a shielding plate for preventing a molecular beam source beam from adhering to the hydrogen inlet.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60030805A JPS61189622A (en) | 1985-02-19 | 1985-02-19 | Molecular beam epitaxy equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60030805A JPS61189622A (en) | 1985-02-19 | 1985-02-19 | Molecular beam epitaxy equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61189622A JPS61189622A (en) | 1986-08-23 |
| JPH035050B2 true JPH035050B2 (en) | 1991-01-24 |
Family
ID=12313895
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60030805A Granted JPS61189622A (en) | 1985-02-19 | 1985-02-19 | Molecular beam epitaxy equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61189622A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0653635B2 (en) * | 1985-05-14 | 1994-07-20 | 日本電信電話株式会社 | Molecular beam epitaxial growth method |
| JP2007201348A (en) * | 2006-01-30 | 2007-08-09 | Epiquest:Kk | Purge cell |
-
1985
- 1985-02-19 JP JP60030805A patent/JPS61189622A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61189622A (en) | 1986-08-23 |
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