JPH0352202A - Method of manufacturing thick film resistors - Google Patents
Method of manufacturing thick film resistorsInfo
- Publication number
- JPH0352202A JPH0352202A JP1185935A JP18593589A JPH0352202A JP H0352202 A JPH0352202 A JP H0352202A JP 1185935 A JP1185935 A JP 1185935A JP 18593589 A JP18593589 A JP 18593589A JP H0352202 A JPH0352202 A JP H0352202A
- Authority
- JP
- Japan
- Prior art keywords
- paste
- resistance
- baked
- temperature
- resistance paste
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
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- Apparatuses And Processes For Manufacturing Resistors (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は超小型の厚膜抵抗器の製造に好適の方法に関す
るものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method suitable for manufacturing ultra-small thick film resistors.
厚膜抵抗器は通常、セラミック基体上に先ず必要な電極
を電極ペーストの塗布、乾燥、焼戒により形成しておき
、この電極間に所要の抵抗ペーストを塗布し、乾燥し、
焼成するようにして製造している。抵抗ペーストを電極
ペーストの後に焼戒するのは、ほぼ同一の温度で2度焼
成すると抵抗被膜の特性が大幅に変化するからである。Thick film resistors are usually made by first forming the necessary electrodes on a ceramic substrate by applying electrode paste, drying, and baking, then applying the required resistance paste between the electrodes, drying,
It is manufactured by firing. The reason why the resistive paste is baked after the electrode paste is that the characteristics of the resistive film will change significantly if the resistive paste is baked twice at approximately the same temperature.
ところで近年、電子部品の高密度化が進み、厚膜抵抗器
もより小型のものが求められている。又、コストダウン
の要求もあり、電極ペーストとして用いるAg − P
d系ペーストにおいても高価なPdの含有率を減少せし
めた低価格の品種に向っており、Pd含有率は更に低下
せざるを得ない状況にある。Incidentally, in recent years, electronic components have become more densely packed, and thick film resistors are also required to be smaller. In addition, there is a demand for cost reduction, and Ag-P used as an electrode paste.
Even in d-based pastes, there is a trend toward low-priced products with a reduced content of expensive Pd, and the Pd content has no choice but to further decrease.
ところが使用するAg−Pd系電極ペースト中のPd含
有率が低下する程電極中のAgが抵抗体部へ拡散し易く
なり、この拡散により抵抗体の性能に変化を生じる。拡
散による影響は抵抗器が小型になる程無視し得なくなる
。即ち厚膜抵抗器の小型化とコストダウンは従来の抵抗
体製造技術による限り、限界に達していると見て差支え
ない。However, as the Pd content in the Ag--Pd electrode paste used decreases, the Ag in the electrode becomes more likely to diffuse into the resistor, and this diffusion causes changes in the performance of the resistor. The effect of diffusion becomes more negligible as the resistor becomes smaller. In other words, it can be safely assumed that miniaturization and cost reduction of thick film resistors have reached their limits as long as conventional resistor manufacturing techniques are used.
本発明の目的は、上記従来技術の欠点を解消し、より小
型の厚膜抵抗器を、性能を劣化することなく安価に製造
し得る方法を提供することにある。SUMMARY OF THE INVENTION An object of the present invention is to provide a method that eliminates the drawbacks of the prior art described above and allows manufacturing smaller thick film resistors at low cost without deteriorating performance.
上記目的を達或するため本発明の方法は、セラミック基
体上に先ず抵抗ペーストを塗布し、乾燥して焼成し、次
いで所定の位置に電極ペーストを塗布し、乾燥した後前
記抵抗ペースト焼成時よりも低い温度で焼成する点に特
徴がある。In order to achieve the above object, the method of the present invention first applies a resistance paste on a ceramic substrate, dries and fires it, then applies an electrode paste at a predetermined position, and after drying, from the time of firing the resistance paste. It is also characterized by being fired at a low temperature.
本発明法が適用し得る抵抗ペーストは特に限定されるも
のでなく、Rung系、Pb.RuzO.系など700
〜1000゜Cで焼成可能な抵抗ペーストならば何れで
あっても良い。そのような抵抗ペーストを先ず基体上に
スクリーン印刷法等によって塗布し、ぺ一スト中の溶剤
を蒸発させて塗膜を乾燥し、当該ペーストの所定の条件
で焼成する。次にこの焼成抵抗膜の電極となるべき所定
の位置に電極ペーストを塗布し、乾燥した後前記抵抗ペ
ーストよりも低い温度で焼戒する。The resistance paste to which the method of the present invention can be applied is not particularly limited, and includes Rung type, Pb. RuzO. 700 series etc.
Any resistance paste that can be fired at ~1000°C may be used. Such a resistance paste is first applied onto a substrate by screen printing or the like, the solvent in the paste is evaporated to dry the coating film, and the paste is fired under predetermined conditions. Next, an electrode paste is applied to a predetermined position of the fired resistive film to serve as an electrode, and after drying, it is fired at a temperature lower than that of the resistive paste.
電極ペーストを抵抗ペースト焼戒時より低い温度で焼成
する理由は、先に形成された抵抗膜の性能を大幅に変化
させないためである。どの程度の温度が適当かは抵抗ペ
ーストの種類によって異なるので、500〜700℃の
範囲内で実験的に求めれば良い。The reason why the electrode paste is fired at a lower temperature than when firing the resistance paste is to avoid significantly changing the performance of the previously formed resistive film. The appropriate temperature varies depending on the type of resistor paste, so it may be determined experimentally within the range of 500 to 700°C.
電極ペーストとしてはAg − Pd系、Ag−Pt系
等Agを主威分とするものが半田付けのし易さの点で好
ましい材料である。これら電極材料は、700〜900
℃で焼成されるタイプが一般的であるが、上記のように
より低い温度で焼成するためにペースト中に使用するガ
ラスの軟化点をより低いものにすると共にガラス含有率
を若干増すなど、低温焼成に適した組或を選択する必要
がある。このような低温焼成用電極ペーストは種々市販
されているので抵抗ペーストと同様適宜入手することが
できる。As the electrode paste, materials containing Ag as the main component, such as Ag-Pd type and Ag-Pt type, are preferred from the viewpoint of ease of soldering. These electrode materials are 700 to 900
The type that is fired at ℃ is common, but as mentioned above, in order to fire at a lower temperature, the softening point of the glass used in the paste is lowered and the glass content is slightly increased, etc. It is necessary to select a suitable combination. Various types of such electrode pastes for low-temperature firing are commercially available, and can be obtained as appropriate in the same way as resistance pastes.
このように本発明法では電極ペーストの焼tc温度を低
くするため抵抗膜への導電或分の拡散が少ない。とくに
抵抗膜の安定性を確保するため高温焼成型の抵抗ペース
トが多く用いられるようになっているが、従来法による
と抵抗ペーストを高温で焼成する程先に形成された電極
からの拡散が多くなるので、このような抵抗ペーストを
使用する場合、本発明法は大きな効果がある。As described above, in the method of the present invention, since the sintering temperature of the electrode paste is lowered, a certain amount of conductive diffusion into the resistive film is reduced. In particular, in order to ensure the stability of the resistive film, high-temperature firing type resistance pastes are increasingly being used, but according to conventional methods, the higher the resistor paste is fired, the more it diffuses from the previously formed electrodes. Therefore, when using such a resistor paste, the method of the present invention is highly effective.
Ag粉57.0、Pd粉0. 5、ガラス粉I2.5、
有機質ビヒクル30.0、各重量%の電極ペーストと、
Rub.粉16.0、ガラス粉53.0、有機質ビヒク
ル31.0,各重量%の100Ω/口の抵抗ペースト(
これをA抵抗ペーストと称する)又はPbzRuzOi
粉26.O、ガラス粉45.5、有機質ビヒクル28.
5、各重量%の100 kΩ/口の抵抗ペースト(これ
をB抵抗ペーストと称する)との組合せで抵抗器を試作
した。ガラス粉末の組或は抵抗用がPbO 70、Si
Od9、^lzos9、BzOi 2、各重量%であり
、電極用はPb074、SiOzl8、aLOz 5、
CaO3、各重量%で、有機ビヒクルとしてエチルセル
ロース15重量%のターピネオール溶液を用いた。Ag powder 57.0, Pd powder 0. 5, glass powder I2.5,
30.0% organic vehicle, each weight % electrode paste;
Rub. Resistance paste of 16.0% powder, 53.0% glass powder, 31.0% organic vehicle, 100Ω/hole each by weight (
This is called A resistance paste) or PbzRuzOi
Powder 26. O, glass powder 45.5, organic vehicle 28.
5. Resistors were prototyped in combination with resistance pastes of 100 kΩ/mouth (referred to as B resistance pastes) of various weight %. Glass powder composition or resistor is PbO 70, Si
Od9, ^lzos9, BzOi 2, each weight%, for electrodes Pb074, SiOzl8, aLOz 5,
For each wt% of CaO3, a 15 wt% terpineol solution of ethylcellulose was used as the organic vehicle.
先ずアルもナ基板に抵抗ペーストを長さ1. 0 mm
、幅0. 5 mmパターンに印刷し、乾燥後ピーク温
度850″C、ピーク時間10分、全焼戒時間60分の
温度プロフィールを有するベルト式焼成炉で焼成した。First, apply resistor paste to a length of 1. 0mm
, width 0. A 5 mm pattern was printed, and after drying, it was fired in a belt-type firing furnace with a temperature profile of a peak temperature of 850''C, a peak time of 10 minutes, and a total firing time of 60 minutes.
次いでこの抵抗膜の両端に電極ペーストを極間距離が0
. 5 mmとなる′ように印刷し、ピーク温度600
″C1ピーク時間5分、全焼戒時間30分の焼成炉で焼
成した。抵抗膜にはガラスコートを施し、常法に従って
面積抵抗値、抵抗温度係数(TCP)、負荷寿命(70
℃, 1.5Hon・0.5Hoff、定格電力1/
16W)、耐湿負荷寿命(40℃.95%RH, 1
.5 H on ・0.5 H off,定格電力1
/16W)を測定した.
又、比較のため、Ag粉60.0、Pd粉5.0、ガラ
ス粉15.0(組或はPb0 7 0. O , Si
Oz 20. 0、Bz(h 10. O、各重量%)
、有機質ビヒクル20.0、各重量%の電極ペーストを
用い、従来例に従ってアルミナ基板に先ず極間距離0.
5 aaの電極パターンで印刷し、850″Cで焼戒
後、該電極間に前記抵抗ベース}A,Bを長さ1.0m
m、幅0. 5 mmのパターンで印刷し、850゜C
で焼成し、上記と同様の測定を行った。Next, apply electrode paste to both ends of this resistive film so that the distance between the electrodes is 0.
.. 5mm, and the peak temperature was 600mm.
"It was fired in a firing furnace with a C1 peak time of 5 minutes and a total firing time of 30 minutes. The resistive film was coated with glass, and the sheet resistance value, temperature coefficient of resistance (TCP), and load life (70
°C, 1.5Hon・0.5Hoff, rated power 1/
16W), humidity load life (40℃.95%RH, 1
.. 5 H on ・0.5 H off, rated power 1
/16W) was measured. In addition, for comparison, Ag powder 60.0, Pd powder 5.0, glass powder 15.0 (combined or Pb0 70. O, Si
Oz 20. 0, Bz (h 10. O, each weight%)
, an organic vehicle of 20.0% by weight, and an electrode paste of each weight %, and a distance between electrodes of 0.0% was first applied to an alumina substrate according to the conventional example.
Print a 5 aa electrode pattern, burn it at 850″C, and connect the resistor bases A and B to a length of 1.0 m between the electrodes.
m, width 0. Print with 5 mm pattern and heat at 850°C.
The same measurements as above were performed.
結果を第1表にまとめて示す。The results are summarized in Table 1.
第
1
表
第1表の結果は本発明法の場合抵抗体本来の性能を示し
、一方従来法では性能が大幅に低下することを示してお
り、本発明法によれば電極材料に影響されないで抵抗器
を製造し得ることが分る。Table 1 The results in Table 1 show that the method of the present invention shows the original performance of the resistor, while the conventional method shows that the performance is significantly reduced, and the method of the present invention shows that it is not affected by the electrode material. It turns out that resistors can be manufactured.
本発明により抵抗器の小型化、低コスト化を一層進めら
れる見通しが得られた。The present invention provides the prospect of further miniaturization and cost reduction of resistors.
Claims (1)
抗器を製造するに際し、セラミック基体上に先ず抵抗ペ
ーストを塗布し、乾燥して焼成し、次いで所定の位置に
電極ペーストを塗布し、乾燥した後前記抵抗ペースト焼
成時よりも低い温度で焼成することを特徴とする厚膜抵
抗器の製造方法。When manufacturing a thick film resistor by forming a resistive coating and an electrode on a ceramic substrate, first a resistive paste is applied on the ceramic substrate, dried and fired, and then an electrode paste is applied at a predetermined position. A method for manufacturing a thick film resistor, comprising firing the resistor paste at a lower temperature than when firing the resistor paste after drying.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1185935A JP2777206B2 (en) | 1989-07-20 | 1989-07-20 | Manufacturing method of thick film resistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1185935A JP2777206B2 (en) | 1989-07-20 | 1989-07-20 | Manufacturing method of thick film resistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0352202A true JPH0352202A (en) | 1991-03-06 |
| JP2777206B2 JP2777206B2 (en) | 1998-07-16 |
Family
ID=16179458
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1185935A Expired - Lifetime JP2777206B2 (en) | 1989-07-20 | 1989-07-20 | Manufacturing method of thick film resistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2777206B2 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5966067A (en) * | 1997-12-26 | 1999-10-12 | E. I. Du Pont De Nemours And Company | Thick film resistor and the manufacturing method thereof |
| JP2002280205A (en) * | 2001-03-21 | 2002-09-27 | Kamaya Denki Kk | Chip-shaped resistor and its manufacturing method |
| US6470167B2 (en) | 2000-02-24 | 2002-10-22 | Samsung Electronics Co., Ltd. | Heating roller for fixing a toner image and method of manufacturing the same |
| CN110504075A (en) * | 2017-10-23 | 2019-11-26 | 潮州三环(集团)股份有限公司 | A kind of Standard resistance range is 10k Ω/ ~ 100k Ω/ thick-film resistor paste and preparation method thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5918669A (en) * | 1982-07-22 | 1984-01-31 | Toshiba Corp | Formation of thick film circuit |
| JPS63181496A (en) * | 1987-01-23 | 1988-07-26 | 松下電器産業株式会社 | Method of manufacturing thick film circuit board |
-
1989
- 1989-07-20 JP JP1185935A patent/JP2777206B2/en not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5918669A (en) * | 1982-07-22 | 1984-01-31 | Toshiba Corp | Formation of thick film circuit |
| JPS63181496A (en) * | 1987-01-23 | 1988-07-26 | 松下電器産業株式会社 | Method of manufacturing thick film circuit board |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5966067A (en) * | 1997-12-26 | 1999-10-12 | E. I. Du Pont De Nemours And Company | Thick film resistor and the manufacturing method thereof |
| US6470167B2 (en) | 2000-02-24 | 2002-10-22 | Samsung Electronics Co., Ltd. | Heating roller for fixing a toner image and method of manufacturing the same |
| JP2002280205A (en) * | 2001-03-21 | 2002-09-27 | Kamaya Denki Kk | Chip-shaped resistor and its manufacturing method |
| CN110504075A (en) * | 2017-10-23 | 2019-11-26 | 潮州三环(集团)股份有限公司 | A kind of Standard resistance range is 10k Ω/ ~ 100k Ω/ thick-film resistor paste and preparation method thereof |
| CN110504075B (en) * | 2017-10-23 | 2021-04-23 | 潮州三环(集团)股份有限公司 | A thick film resistor paste with a resistance value ranging from 10kΩ/□ to 100kΩ/□ and its preparation method |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2777206B2 (en) | 1998-07-16 |
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