JPH0353241B2 - - Google Patents
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- Publication number
- JPH0353241B2 JPH0353241B2 JP3142584A JP3142584A JPH0353241B2 JP H0353241 B2 JPH0353241 B2 JP H0353241B2 JP 3142584 A JP3142584 A JP 3142584A JP 3142584 A JP3142584 A JP 3142584A JP H0353241 B2 JPH0353241 B2 JP H0353241B2
- Authority
- JP
- Japan
- Prior art keywords
- selenium
- temperature
- vacuum
- distillation
- crude
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
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- Manufacture And Refinement Of Metals (AREA)
Description
本発明は高純度セレンの製造に係り、特に粗セ
レンの真空蒸留による精製方法の改良に関するも
のである。
近年、増大した需要をもつ電子写真用感光体、
撮像管などの光半導体素子形成その他の用途とし
てセレンの高純度化が要請されている。セレンは
銅電解製のアノードスライム中に含有され、通
常、該スライムを熔焼して酸化セレンとし、次い
で亜セレン酸水溶液に変換後、亜硫酸ガスで還元
して粗セレンとして得られる。この段階で得られ
る粗セレンはその純度が99〜99.9%程度で更に精
製処理を加えなければ実用に供し得ない。このよ
うにして得られる粗セレンは水分が多量に含まれ
ているので、真空乾燥、温風乾燥などの方法で乾
燥した後、真空蒸留あるいは大気圧蒸留で精製し
て高純度化が行われる。粗セレンの形状はコーク
ス状あるいは粉末状であつて、多量の水分が吸着
されているので、乾燥には長時間を要し、しかも
完全乾燥は困難である。したがつて、精製蒸留工
程においては高真空に到達するのに長時間を要す
るなどのため安定した操業は阻害される。含水分
によるトラブルの解消のため粗セレンを微細に粉
砕して乾燥する方法も考えられるが、乾燥時間の
短縮は得られず、反つて粉砕時の不純物混入のお
それがあり、損失はまぬがれない。
粗セレンの精製法の改良として、粗セレンを連
続的に装入、溶解して、真空蒸留に付する方法
が、例えば特開昭56−129604号あるいは特開昭56
−160307号として提案されている。しかし、これ
らの方法によると、溶解炉、蒸留器、貯蔵槽の各
内部圧力がバランス良く設定されなければならな
い。また、蒸留器の内圧も1トール以下程度の比
較的低真空度とならざるを得ないので、不純物の
除去もバツチ式蒸留で得られるような10-2〜10-6
トール程度の高真空の場合程の不純物の除去が困
難である。しかも、それらの方法では前記の粗セ
レンの吸着水分の問題は考慮されていない。
本発明は従来技術の欠点を改善し、短時間で効
率的に粗セレンの高真空下に安定して蒸留操業で
き、しかも99.999%以上の高純度セレンを得るこ
とのできるセレンの精製方法を提供することを目
的とする。
本発明者は粗セレンに多量に吸着して含まれる
水分が真空蒸留に際して蒸留器の真空度の上昇速
度、したがつて蒸留時間の延長を左右する主な原
因であることに着目して粗セレンの融解物に対す
る前処理について種々検討した。その結果、粗セ
レンの融解槽中の滞留時間、加熱温度を選択する
ことによつて、上記の問題が解消するのみならず
生成するセレンの純度が予想外に向上することを
見出した。
本発明は、粗セレン融解槽中の粗セレン融解物
を330℃ないし500℃の温度範囲で少くとも30分間
加熱処理し、次いで該融解物の温度を250℃ない
し320℃の範囲の均一温度に冷却した後、250℃な
いし300℃に予熱された真空蒸留装置を用いて蒸
留することを特徴とする。
粗セレン原料は前述の如く粉末状で、約5%程
度の吸着水分のほか、硫黄、ナトリウム、アルミ
ニウム、鉄などの微量の不純物を含有する。本発
明による融解槽内における粗セレン融解物の熱処
理はこれらの不純物中の揮発分を蒸発除去し、あ
るいは熱分解によつて難揮発物に変化させるもの
と思われる。したがつて、この熱処理は上記の揮
発分の除去または熱分解反応が充分に行われるよ
うな時間持続することが必要である。熱処理温度
は真空蒸留時の最低必要温度を考慮して約330℃
以上が必要である。上限温度は約500℃が適当で
あり、500℃以上の温度ではセレン自体の蒸気圧
が高くなり、操業困難となるので好ましくない。
上記範囲の熱処理温度で粗セレン原料の品位にも
よるが、少くとも30分間、一般には2〜3時間で
充分な所期効果が得られる。
熱処理の終了した粗セレン融解物は充分に高温
であるから、突沸を防ぐため蒸留器装入前に冷却
されなければならない。真空蒸留器の操業は普
通、10-2〜10-6トールの高真空で好ましく行わ
れ、その温度範囲は330〜450℃であるから、粗セ
レン融解物の温度は320℃以下にする必要がある。
しかし、余り温度を下げすぎると、昇温に時間を
要し、また凝固点が約220℃付近であることを考
慮して250℃以上に保持することが必要である。
その際、冷却温度の調整は融解物温度の均一分布
を得るため徐々に行う必要がある。短時間では部
分的な冷却によつて融解物の均一温度が得られな
い。通常、10分間以上、好ましくは30分間一定温
度に保持しておけばその目的は達成される。
適温となつた粗セレン融解物は真空蒸留装置に
供給されるが、その際、該真空蒸留器は予め予熱
しておく必要がある。これは、短時間で効率よく
蒸留操作を行い、それによつて高純度セレンを得
るため必要な条件である。予熱温度は装入セレン
融解物の温度と同じ理由で250〜300℃である。
融解槽における粗セレンの熱処理は大気中でも
可能であるが、酸素その他の不純物の混入のおそ
れもあり、窒素ガス等の不活性ガス雰囲気中で行
うのが好ましい。また、原料粗セレンが不純物を
多く含む場合には、融解炉の底部にヘドロが生じ
あるいは浮上物が形成される場合があるが、かか
る場合に備えて融解槽にはヘドロ抜き機構または
浮上物の掻き取り手段を設けるのが好ましい。
融解槽を別に設けずに、真空蒸留器中で予備的
に融解熱処理を行い、冷却後、真空蒸留操作を行
つても実質的に同じ効果が得られるが、真空蒸留
器中での融解、冷却は熱効率が悪く、また上記ヘ
ドロの処理など操作上の難点のため精製セレンの
純度にも影響するので融解物の加熱、冷却処理は
分離して行う方が都合がよい。
本発明の実施により、従来技術に較べて次の利
点が得られる。
(1) 予め融解槽で粗セレン融解物の熱処理を行う
ことにより、水分、硫黄などの低沸点不純物が
除去されているので、蒸留器における10-2〜
10-6トールの高真空が短時間で達成され、安定
した高真空蒸留操作ができる。
(2) 10-2〜10-6トールの高真空蒸留により不純物
の除去が効率化し、精製精度が著しく向上す
る。
(3) 多少水分の多い原料粗セレンでも熱処理でき
るので長時間の予備乾燥を必要としないと同時
に粉砕工程などによる不純物の混入のおそれが
ない。
以下、実施例(比較例を含む)をもつて本発明
を更に説明する。
実施例
銅電解精製のアノードスライムから常法によつ
て回収した粗セレンを原料として本発明を実施す
る。粗セレンは粒径5〜20m/mの湿潤(水分約
5%)粒状であり、その不純物濃度は乾燥物基準
で下記表に示した通りである。
該原料粗セレン8Kgを石英製容器に入れ、ニク
ロム線加熱装置を有する融解槽中で500ml/分の
割合で窒素ガスを流しながら融解した。融解槽温
度400℃で2時間保持した後、300℃に降温させ、
この温度で更に30分間保持させた。次いで粗セレ
ン融解物を石英容器ごと融解槽から取り出し、約
300℃に予熱してある真空蒸留器に装入して真空
蒸留に付した。蒸留器の加熱温度は340℃であつ
て、真空度は真空ポンプ作動直後に0.05トールを
示し、蒸留中変化はなかつた。
分析試料の採取は、融解槽の加熱処理後の融解
物および蒸留受器の精製セレンについて行い、原
料粗セレンの不純物濃度と比較した。また、下記
比較例で得られた真空蒸留時間(蒸留開始前およ
び蒸留時間)との比較で操業時間の短縮度を比較
した。
比較例の実施条件は次の通りである。
実施例で使用したものと同じ原料粗セレン8Kg
を30〜40℃で10時間、温風乾燥(30m3/分)した
後、予熱していない真空蒸留器の蒸留槽に装入
し、340℃で蒸留した。蒸留器の真空度は真空ポ
ンプ作動時から2時間は0.1〜0.2トール程度であ
り、その後、最高0.08トールまで上昇した。
結果を下表に要約する。
The present invention relates to the production of high-purity selenium, and particularly to an improvement in a method for purifying crude selenium by vacuum distillation. Electrophotographic photoreceptors, which have seen increased demand in recent years,
There is a demand for highly purified selenium for use in the formation of optical semiconductor devices such as image pickup tubes and other uses. Selenium is contained in copper electrolytic anode slime, and the slime is usually sintered to form selenium oxide, then converted to an aqueous selenite solution, and then reduced with sulfur dioxide gas to obtain crude selenium. The crude selenium obtained at this stage has a purity of about 99 to 99.9% and cannot be put to practical use unless it is further purified. Since the crude selenium obtained in this way contains a large amount of water, it is dried by a method such as vacuum drying or hot air drying, and then purified by vacuum distillation or atmospheric pressure distillation to achieve high purity. Crude selenium is in the form of coke or powder, and a large amount of water is adsorbed, so it takes a long time to dry, and complete drying is difficult. Therefore, in the purification distillation process, stable operation is hindered because it takes a long time to reach a high vacuum. In order to solve the problems caused by water content, it is possible to finely grind crude selenium and dry it, but this does not shorten the drying time, and there is a risk of contamination with impurities during the grinding process, resulting in unavoidable losses. As an improvement of the crude selenium purification method, a method of continuously charging and dissolving crude selenium and subjecting it to vacuum distillation is disclosed, for example, in JP-A-56-129604 or JP-A-56.
- Proposed as No. 160307. However, according to these methods, the internal pressures of the melting furnace, distiller, and storage tank must be set in a well-balanced manner. In addition, since the internal pressure of the distiller must be kept at a relatively low degree of vacuum, about 1 torr or less, impurities can be removed at a level of 10 -2 to 10 -6 , similar to that obtained with batch distillation.
It is difficult to remove impurities as in the case of a vacuum as high as Torr. Moreover, these methods do not take into consideration the problem of adsorbed water on crude selenium. The present invention improves the shortcomings of the prior art and provides a selenium purification method that enables stable distillation of crude selenium under high vacuum in a short period of time and efficiently, and that can obtain high purity selenium of 99.999% or more. The purpose is to The present inventor focused on the fact that a large amount of water adsorbed and contained in crude selenium is the main cause that affects the rate of increase in the degree of vacuum in the still during vacuum distillation, and therefore the extension of the distillation time. Various pretreatments for the melt were investigated. As a result, it has been found that by selecting the residence time and heating temperature of crude selenium in the melting tank, the above-mentioned problems can not only be solved, but also the purity of the produced selenium can be unexpectedly improved. The present invention heat-treats the crude selenium melt in the crude selenium melting tank at a temperature range of 330°C to 500°C for at least 30 minutes, and then brings the temperature of the melt to a uniform temperature in the range of 250°C to 320°C. After cooling, distillation is performed using a vacuum distillation apparatus preheated to 250°C to 300°C. As mentioned above, the crude selenium raw material is in powder form and contains about 5% of adsorbed water as well as trace amounts of impurities such as sulfur, sodium, aluminum, and iron. It is believed that the heat treatment of the crude selenium melt in the melting tank according to the present invention evaporates and removes the volatile components of these impurities, or converts them into less volatile materials through thermal decomposition. Therefore, it is necessary that this heat treatment lasts for a sufficient period of time to allow the above-mentioned volatile matter removal or thermal decomposition reaction to take place sufficiently. The heat treatment temperature is approximately 330℃ considering the minimum required temperature during vacuum distillation.
The above is necessary. Appropriately, the upper limit temperature is about 500°C; temperatures higher than 500°C are not preferred because the vapor pressure of selenium itself becomes high, making operation difficult.
At a heat treatment temperature within the above range, sufficient desired effects can be obtained in at least 30 minutes, generally 2 to 3 hours, depending on the quality of the crude selenium raw material. Since the heat-treated crude selenium melt is at a sufficiently high temperature, it must be cooled before charging into the distiller to prevent bumping. Vacuum distiller operation is normally preferably carried out at a high vacuum of 10 -2 to 10 -6 Torr, with a temperature range of 330 to 450°C, so the temperature of the crude selenium melt should be below 320°C. be.
However, if the temperature is lowered too much, it will take time to raise the temperature, and considering that the freezing point is around 220°C, it is necessary to maintain it at 250°C or higher.
In this case, the cooling temperature must be adjusted gradually in order to obtain a uniform distribution of melt temperature. For short periods of time, a uniform temperature of the melt cannot be achieved due to partial cooling. Generally, this purpose is achieved by maintaining the temperature at a constant temperature for 10 minutes or more, preferably 30 minutes. The crude selenium melt that has reached an appropriate temperature is supplied to a vacuum distillation apparatus, but in this case, the vacuum distillation apparatus must be preheated in advance. This is a necessary condition in order to perform the distillation operation efficiently in a short time and thereby obtain high purity selenium. The preheating temperature is 250-300°C for the same reason as the temperature of the charged selenium melt. Although the heat treatment of crude selenium in the melting tank is possible in the air, there is a risk of contamination with oxygen and other impurities, so it is preferable to perform the heat treatment in an inert gas atmosphere such as nitrogen gas. In addition, if the raw material crude selenium contains many impurities, sludge or floating substances may form at the bottom of the melting furnace. Preferably, scraping means are provided. Substantially the same effect can be obtained by performing preliminary melting heat treatment in a vacuum distiller without providing a separate melting tank, and then performing a vacuum distillation operation after cooling. has poor thermal efficiency, and operational difficulties such as the treatment of sludge affect the purity of purified selenium, so it is more convenient to separate the heating and cooling treatments of the melt. Implementation of the invention provides the following advantages over the prior art. (1) Low-boiling point impurities such as moisture and sulfur are removed by heat-treating the crude selenium melt in a melting tank in advance, so that low boiling point impurities such as water and sulfur are removed.
A high vacuum of 10 -6 Torr can be achieved in a short time, allowing stable high vacuum distillation operations. (2) High-vacuum distillation at 10 -2 to 10 -6 Torr improves efficiency in removing impurities and significantly improves purification accuracy. (3) Even crude selenium as a raw material with a somewhat high moisture content can be heat-treated, so there is no need for long preliminary drying, and at the same time there is no risk of contamination with impurities during the grinding process. The present invention will be further explained below using Examples (including Comparative Examples). Example The present invention is carried out using crude selenium recovered by a conventional method from the anode slime of copper electrolytic refining as a raw material. Crude selenium is in the form of wet (approximately 5% moisture) particles with a particle size of 5 to 20 m/m, and its impurity concentration is as shown in the table below on a dry basis. 8 kg of crude selenium as a raw material was placed in a quartz container and melted in a melting tank equipped with a nichrome wire heating device while flowing nitrogen gas at a rate of 500 ml/min. After holding the melting tank temperature at 400℃ for 2 hours, the temperature was lowered to 300℃,
This temperature was maintained for an additional 30 minutes. Next, the crude selenium melt was taken out from the melting tank along with the quartz container, and approximately
The mixture was placed in a vacuum distiller preheated to 300°C and subjected to vacuum distillation. The heating temperature of the distiller was 340°C, and the degree of vacuum was 0.05 Torr immediately after the vacuum pump was activated, and did not change during the distillation. Analytical samples were collected from the melted product after heat treatment in the melting tank and purified selenium from the distillation receiver, and compared with the impurity concentration of the crude selenium raw material. In addition, the degree of shortening of the operating time was compared with the vacuum distillation time (before the start of distillation and the distillation time) obtained in the following comparative example. The conditions for implementing the comparative example are as follows. 8 kg of crude selenium, the same raw material used in the example
After drying with hot air (30 m 3 /min) at 30 to 40°C for 10 hours, the mixture was placed in a distillation tank of an unpreheated vacuum distiller and distilled at 340°C. The degree of vacuum in the distiller was approximately 0.1 to 0.2 Torr for two hours after the vacuum pump was activated, and then rose to a maximum of 0.08 Torr. The results are summarized in the table below.
【表】
上表の結果から、本発明による原料粗セレンの
加熱処理(400℃、2時間)で既に不純物の大部
分が除去されていることが判る。そして、蒸留精
製された精製セレンの不純物を合計1ppm程度に
低減させることができた。これは従来技術の比較
例で得た精製セレンの半分以下であり、その再蒸
留セレンの分析値よりもすぐれていることを示し
ている。更に蒸留に要する時間は、本発明の融解
物の加熱処理によつて得られる高真空度ならびに
到達時間の短縮により著しく改善されることが実
証された。[Table] From the results in the above table, it can be seen that most of the impurities have already been removed by the heat treatment (400° C., 2 hours) of the crude selenium raw material according to the present invention. In addition, we were able to reduce the impurities of purified selenium purified by distillation to a total of about 1 ppm. This is less than half of the purified selenium obtained in the comparative example of the prior art, and shows that it is superior to the analytical value of redistilled selenium. Furthermore, it has been demonstrated that the time required for distillation is significantly improved due to the high vacuum degree and shortening of the arrival time obtained by the heat treatment of the melt according to the invention.
Claims (1)
ないし500℃の温度範囲で少くとも30分間加熱処
理し、次いで該融解物の温度を250℃ないし320℃
の範囲の均一温度に冷却した後、250℃ないし300
℃に予熱された真空蒸留装置を用いて蒸留するこ
とを特徴とするセレンの精製方法。1 Heat the crude selenium melt in the crude selenium melting tank to 330°C.
to 500°C for at least 30 minutes, and then increase the temperature of the melt to 250°C to 320°C.
After cooling to a uniform temperature in the range of 250℃ to 300℃
A method for purifying selenium, characterized by distilling it using a vacuum distillation apparatus preheated to ℃.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3142584A JPS60176909A (en) | 1984-02-23 | 1984-02-23 | Refining of selenium |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3142584A JPS60176909A (en) | 1984-02-23 | 1984-02-23 | Refining of selenium |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60176909A JPS60176909A (en) | 1985-09-11 |
| JPH0353241B2 true JPH0353241B2 (en) | 1991-08-14 |
Family
ID=12330885
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3142584A Granted JPS60176909A (en) | 1984-02-23 | 1984-02-23 | Refining of selenium |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60176909A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4957909B2 (en) * | 2007-12-25 | 2012-06-20 | 三菱マテリアル株式会社 | Selenium distillation method and distillation apparatus |
| JP5024567B2 (en) * | 2008-03-29 | 2012-09-12 | 三菱マテリアル株式会社 | Crystalline selenium powder and method for producing the same |
-
1984
- 1984-02-23 JP JP3142584A patent/JPS60176909A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60176909A (en) | 1985-09-11 |
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