JPH0353609B2 - - Google Patents
Info
- Publication number
- JPH0353609B2 JPH0353609B2 JP57013774A JP1377482A JPH0353609B2 JP H0353609 B2 JPH0353609 B2 JP H0353609B2 JP 57013774 A JP57013774 A JP 57013774A JP 1377482 A JP1377482 A JP 1377482A JP H0353609 B2 JPH0353609 B2 JP H0353609B2
- Authority
- JP
- Japan
- Prior art keywords
- light
- hole
- subject
- photoelectric
- photocathode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B7/00—Mountings, adjusting means, or light-tight connections, for optical elements
- G02B7/28—Systems for automatic generation of focusing signals
- G02B7/30—Systems for automatic generation of focusing signals using parallactic triangle with a base line
- G02B7/32—Systems for automatic generation of focusing signals using parallactic triangle with a base line using active means, e.g. light emitter
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Light Receiving Elements (AREA)
- Focusing (AREA)
- Automatic Focus Adjustment (AREA)
Description
【発明の詳細な説明】
本発明は、光電変換面を有する光電素子の一部
に透孔を形成し、その裏面側より透孔を通し、さ
らに結像レンズ系を通して被写(検)体に投光
し、被写体からの反射投影像を前記光電変換面に
結像させて、その光量を測定することにより、結
像レンズ系が合焦点にあるか否かの検出手段、あ
るいは被写体の距離測定手段に使用して好適な光
電素子に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention involves forming a through hole in a part of a photoelectric element having a photoelectric conversion surface, passing through the through hole from the back side, and then passing an imaging lens system through the through hole to an object (examination). A means for detecting whether or not the imaging lens system is in focus, or measuring the distance to the object, by projecting light, forming a reflected image from the object on the photoelectric conversion surface, and measuring the amount of light. The present invention relates to a photoelectric device suitable for use in a means.
一般に、カメラ、テレビカメラあるいは内視鏡
等の光学機器を用いて、被写体あるいは被検体を
光学的に鮮明に観察あるいは撮影する場合、結像
(撮影)レンズ系を調節して合焦位置に設定しな
ければならないことがしばしばある。この場合結
像レンズ系が合焦位置にあるか否か、つまり被写
体が結像面に鮮明に結像されているか否かを検出
する手段として、光電変換機能を有する光電素子
が広く用いられている。 Generally, when observing or photographing a subject or subject optically clearly using an optical device such as a camera, television camera, or endoscope, the imaging (photographing) lens system is adjusted and set to the focal position. There are often things that need to be done. In this case, a photoelectric element with a photoelectric conversion function is widely used as a means for detecting whether the imaging lens system is in the focused position, that is, whether the subject is clearly imaged on the imaging plane. There is.
例えば、特開昭56−128923号公報に開示されて
いるようにスプリツトプリズムを使用する手段に
おいては、少なくとも上下各2個以上の微小な光
電素子を必要とし、一定レベル以上の精度を必要
とする場合には、前記光電素子を多数配設すると
共に、それらの出力信号を比較して合焦点である
か否かを検出する回路系が複雑となり、特に生産
数の少ない製品においては、高価となるという問
題がある。 For example, the method using a split prism as disclosed in Japanese Patent Application Laid-Open No. 56-128923 requires at least two or more minute photoelectric elements on the upper and lower sides, and requires a certain level of accuracy or higher. In this case, in addition to arranging a large number of photoelectric elements, the circuit system for comparing their output signals and detecting whether or not the focus is in focus becomes complicated, which can be expensive, especially for products that are produced in small numbers. There is a problem with becoming.
さらに特開昭56−125713号公報に開示されてい
るように、光源を点滅して被写体に投光し、消灯
区間における出力信号を点灯区間における出力信
号から差し引くことにより、上記光源以外の外光
の影響を軽減し、被写体が暗い場合、及び暗い撮
影光学系の場合においても、合焦か否かを検出で
きる焦点検出装置があるが、構成が複雑となるた
め、この装置を設けた装置が高価になるという問
題がある。 Furthermore, as disclosed in Japanese Patent Application Laid-Open No. 56-125713, by flashing a light source and projecting light onto the subject, and subtracting the output signal in the off section from the output signal in the on section, external light other than the above light source can be detected. There is a focus detection device that can reduce the effects of this and detect whether or not the subject is in focus even when the subject is dark or the photographic optical system is dark, but the configuration is complicated, so it is difficult to The problem is that it is expensive.
このため、本出願人は、先に光電素子にピンホ
ール等の透孔を設け、この透孔を通し、被写体に
投光された反射投影像を前記光電素子に結像さ
せ、その場合の光量を検出することにより、簡単
な構成で、且つ暗い被写体の場合あるいは暗い結
像光学系を用いた場合においても合焦位置(点)
の検出ができる光電素子を提出した。 For this reason, the present applicant first provided a through hole such as a pinhole in the photoelectric element, and focused the reflected projection image projected onto the subject through this through hole on the photoelectric element, and the amount of light in that case By detecting
We submitted a photoelectric device that can detect
上記光電素子に単にピンホール、スリツト状等
の透孔を設けるには、薄膜状のP型半導体をN型
半導体層に形成あるいは接合して形成した光半導
体等を用い、その表面を化学処理し、エツチング
(浸食)によつて第1図に示すように透孔を形成
する手段が知られている。 To simply provide pinholes, slits, or other through-holes in the above-mentioned photoelectric element, an optical semiconductor formed by forming or bonding a thin P-type semiconductor to an N-type semiconductor layer is used, and its surface is chemically treated. A known method is to form through holes by etching (erosion), as shown in FIG.
同図に示すように通常のエツチングによつて形
成される透孔1を有する光電素子2においては、
光電(変換)面2aとなる薄いP(形半導体)層
がエツチング面とされ、P層側における透孔1の
径(あるいは幅)1aがその基部側のN(形半導
体)層3側における透孔1の径(あるいは幅)1
bより大きくなる。この場合の表裏面における透
孔1の径(幅)1a,1bの差は厚さにもよる
が、0.2〔mm〕程度に達する場合がある。このよう
な場合には第2図に示すような合焦点検出に用い
た際、不都合が生じることを以下に説明する。 As shown in the figure, in a photoelectric element 2 having a through hole 1 formed by ordinary etching,
The thin P (type semiconductor) layer that becomes the photoelectric (conversion) surface 2a is used as the etching surface, and the diameter (or width) 1a of the through hole 1 on the P layer side is the same as the diameter (or width) 1a of the through hole 1 on the N (type semiconductor) layer 3 side on the base side. Diameter (or width) of hole 1
It becomes larger than b. In this case, the difference between the diameter (width) 1a and 1b of the through hole 1 on the front and back surfaces may reach about 0.2 [mm], although it depends on the thickness. In such a case, inconveniences will occur when used for in-focus point detection as shown in FIG. 2, which will be explained below.
第2図は、上記光電素子2を用いて合焦点検出
を行う原理を示す。 FIG. 2 shows the principle of detecting a focused point using the photoelectric element 2 described above.
同図において、ランプ5で点灯された光は、コ
ンデンサレンズ6で集光されて照明用フアイバ
(もちろん単一のフアイバでも良い)7の一方の
端面に照射され、他方の端面が位置する前記光電
素子2の透孔1を通り、さらにその前方の光軸8
上に配設された結像レンズ(系)9を経て被写体
10に投光される。 In the figure, light lit by a lamp 5 is condensed by a condenser lens 6 and irradiated onto one end face of an illumination fiber (of course, a single fiber may be used) 7, and the other end face is located at the photoelectric The optical axis 8 passes through the through hole 1 of the element 2 and further in front of it.
Light is projected onto a subject 10 through an imaging lens (system) 9 disposed above.
上記光電素子2のPN接合面にはバツテリ11
と抵抗12が直列に接続され、光電面2aに光が
入射されるとその光量に応じてPN接合面の抵抗
値が変化し、この抵抗値の変化に従う電流変化を
前記抵抗12両端の出力端から電圧変化として検
出できるように構成されている。 A battery 11 is installed on the PN junction surface of the photoelectric element 2.
and a resistor 12 are connected in series, and when light is incident on the photocathode 2a, the resistance value of the PN junction surface changes depending on the amount of light, and the current change according to the change in resistance value is reflected at the output terminals of both ends of the resistor 12. It is configured so that it can be detected as a voltage change from
上記光電素子2の裏面側は、貼着等により遮光
板13に固定され、さらに前記フアイバ7はこの
遮光板13にシール部材14等によつて固定され
ている。 The back side of the photoelectric element 2 is fixed to a light shielding plate 13 by adhesion or the like, and the fiber 7 is further fixed to this light shielding plate 13 with a sealing member 14 or the like.
上記のように配設された光学系において、今、
仮りに被写体10が符号bで示す位置の時合焦点
で、それより近すぎたり、それより遠すぎたりし
た場合の位置をそれぞれ符号a,cで示す。 In the optical system arranged as above, now,
Suppose that the subject 10 is in focus at the position indicated by b, but the positions if it is too close or too far away are indicated by a and c, respectively.
上記の場合には、符号bの位置で反射された光
は、結像レンズ9を経て光電面2aにおける透孔
1の位置が収束点(結像点)となるので、この透
孔1周囲の光電面2aには、光が達しないので、
この場合電流は殆ど流れないので、抵抗12両側
の電圧は略零となる。 In the above case, the light reflected at the position b passes through the imaging lens 9 and the position of the through hole 1 on the photocathode 2a becomes the convergence point (imaging point), Since the light does not reach the photocathode 2a,
In this case, since almost no current flows, the voltage on both sides of the resistor 12 becomes approximately zero.
一方、符号aの位置で反射された光は、上記透
孔1の後方位置が収束点となるので、図示のよう
に透孔1外周の光電面2aに光が達し、この光で
照射されたPN接合面に電流が流れ、抵抗12両
端に検出電圧が出力される。同様に符号cの位置
で反射された光は、透孔1の前方位置ですでに収
束点となり、その後拡開するので、光電面2aに
光が達し、抵抗12両端から電圧が出力される。
このように抵抗12両端の出力端の電圧が極小と
なる時が合焦点であることが分る。 On the other hand, the light reflected at the position a has a convergence point at the rear position of the through hole 1, so as shown in the figure, the light reaches the photocathode 2a on the outer periphery of the through hole 1 and is irradiated with this light. A current flows through the PN junction surface, and a detection voltage is output across the resistor 12. Similarly, the light reflected at the position c already becomes a convergence point at the front position of the through hole 1 and then spreads out, so that the light reaches the photocathode 2a and a voltage is output from both ends of the resistor 12.
It can be seen that the focal point is when the voltage at the output terminals across the resistor 12 becomes minimum.
しかしながら上記のような形状の光電素子2に
おいては、被写体10が合焦の位置bから、わず
かに後方にずれた位置、つまり符号b′で示す位置
のとき、その結像位置は光電面2aよりわずかに
前方位置で、光電面2aの位置では拡開している
が、透孔1が前方に拡開しているので、光電面2
aに届かない。つまり、合焦点として検出されて
しまうことがある。このことは被写体10が合焦
の位置bからわずかに前方にずれた場合について
も当てはまることである。 However, in the photoelectric element 2 having the above-mentioned shape, when the subject 10 is at a position slightly rearwardly shifted from the in-focus position b, that is, at a position indicated by the symbol b', the image formation position is closer to the photocathode 2a. Although it is slightly expanded at the front position of the photocathode 2a, since the through hole 1 is expanded forward, the photocathode 2a is slightly expanded.
I can't reach a. In other words, it may be detected as a focused point. This also applies when the subject 10 is slightly shifted forward from the in-focus position b.
上述のように従来のようなエツチング処理にお
いては、合光点検出の機能が低下するという不都
合が生じる。上述のことは、結像レンズを合焦点
に設定して距離を測定する場合においても不都合
となるものである。 As mentioned above, the conventional etching process has the disadvantage that the function of detecting the point of light convergence is degraded. The above-mentioned problem is also inconvenient when measuring distance with the imaging lens set at a focused point.
本発明は、上述した点に鑑みてなされたもの
で、合焦点の検出および被写体の路離測定を高精
度に行うことができ、しかも照明光が通過する際
に直接光電流が流れてしまうことがなく、被写体
の反射光による光量測定が正確に行うことができ
るようにした光電素子を提供することを目的とす
る。 The present invention has been made in view of the above-mentioned points, and it is possible to detect the in-focus point and measure the distance of the subject with high precision, and also to avoid the direct flow of photocurrent when the illumination light passes through. It is an object of the present invention to provide a photoelectric element that can accurately measure the amount of light reflected from a subject without causing any interference.
前記目的を達成するため本発明による光電素子
は、光電変換面の一方の面に設けた光電素子に透
孔を形成し、この透孔及び結像レンズ系を通して
被検体に投光し、該被検体による反対投影像を前
記光電変換面に結像することによつて光量を測定
して被検体に対する結像レンズ系の焦点位置又は
被検体の距離を測定する手段に用いられる光電素
子において、前記透孔は光電変換面側における径
又は幅がその裏面側におけるものより小さい形状
又は等しい形状に形成し、前記透孔の内壁に裏面
層となる半導体層と同質層として光電変化を生じ
させない層を設けている。 In order to achieve the above object, the photoelectric element according to the present invention is provided by forming a through hole in the photoelectric element provided on one side of the photoelectric conversion surface, and projecting light onto a subject through the through hole and an imaging lens system. A photoelectric element used for means for measuring the focal position of an imaging lens system with respect to the subject or the distance to the subject by measuring the amount of light by forming a counter-projected image of the subject on the photoelectric conversion surface, The through hole is formed in a shape in which the diameter or width on the photoelectric conversion surface side is smaller or equal to that on the back side, and a layer that does not cause photoelectric change is formed on the inner wall of the through hole as a layer that is homogeneous with the semiconductor layer that will become the back layer. It is set up.
以下、図面を参照して本発明の実施例を具体的
に説明する。 Embodiments of the present invention will be specifically described below with reference to the drawings.
第3図は、本発明の第1実施例における光電素
子を用いた場合においる合焦点検出のための光量
測定手段を示す。 FIG. 3 shows a light amount measuring means for detecting a focused point when a photoelectric element is used in the first embodiment of the present invention.
第2図に比べ、第3図における光電素子21の
透孔22は、光電面23における径(あるいは
幅)22aが裏面側における径(あるいは幅)2
2bより小さく形成されている点が特徴となつて
いる。つまりこの場合エツチングされる面が光電
面23側でなく、裏面側のN層24側となつてい
る。この他の部分は、第2図と略同一構成にされ
ている。 Compared to FIG. 2, the diameter (or width) 22a of the photoelectric element 21 in FIG.
It is characterized by being smaller than 2b. That is, in this case, the surface to be etched is not the photocathode 23 side but the N layer 24 side on the back side. The other parts have substantially the same configuration as in FIG. 2.
上記光電面23側における透孔22の径(ある
いは幅)22aの大きさは、照明用フアイバ7の
他方の出射端の径(あるいは幅)と略等しくなる
ように形成されている。前記透孔22が形成され
た光電素子21においては、照明光が直接光電面
23(を形成するP層)に達しないように、透孔
22の前端における周壁面はN層24で薄く覆わ
れている。 The diameter (or width) 22a of the through hole 22 on the photocathode 23 side is formed to be approximately equal to the diameter (or width) of the other output end of the illumination fiber 7. In the photoelectric element 21 in which the through hole 22 is formed, the peripheral wall surface at the front end of the through hole 22 is thinly covered with an N layer 24 so that illumination light does not directly reach (the P layer forming the) photocathode 23. ing.
尚、符号25は、不要な反射光が入射されない
ようにするための遮光板である。 Incidentally, reference numeral 25 is a light shielding plate for preventing unnecessary reflected light from entering.
このように構成された第1実施例における光電
素子21による合焦点検出用の光量測定手段にお
けては、合焦点を精度良く検出できることを以下
に説明する。 It will be explained below that the light amount measuring means for detecting a focused point using the photoelectric element 21 in the first embodiment configured as described above can detect a focused point with high accuracy.
前述と同様に、被写体10が符号bで示す位置
の時、結像レンズ9が合焦となすとし、この符号
bの位置よりわずかに後方位置にある被写体10
の位置を符号b′で示す。符号bで示す位置から反
射された(細い実線で示す)光が結像される位置
は、前述と同様に、光軸8上において、光電面2
3と面一となる点となるので、この場合には光電
面23に光が達しない。 Similarly to the above, it is assumed that the imaging lens 9 is in focus when the subject 10 is at the position indicated by the symbol b, and when the subject 10 is located slightly behind the position indicated by the symbol b.
The position of is indicated by the symbol b'. The position where the light reflected from the position indicated by the symbol b (indicated by the thin solid line) is imaged is on the optical axis 8, as described above, on the photocathode 2.
Since the point is flush with 3, the light does not reach the photocathode 23 in this case.
しかしながら、符号b′で示す位置で反射された
(一点鎖線で示す)光は、光電面23より前方で
すでに結像点となるので、その後方の光電面23
側には拡開する光が入射される。 However, the light reflected at the position indicated by the symbol b' (indicated by the dashed line) already forms an image point in front of the photocathode 23;
Expanding light is incident on the side.
前述の場合には光電面2a側に拡開した(つま
り前面側に拡開した)透孔1であるので、光電面
2aには光が達し得なかつたが、この実施例によ
れば、透孔22が裏面側に拡開するよう形成して
あるので光電面23に光が達するようになる。つ
まり結像レンズ9に対し、合焦点よりわずかにず
れた被写体10が合焦点にないことを検出できる
ことになる。 In the case described above, the light could not reach the photocathode 2a because the through hole 1 was expanded toward the photocathode 2a side (that is, expanded toward the front side), but according to this embodiment, the light could not reach the photocathode 2a. Since the hole 22 is formed to expand toward the back side, light reaches the photocathode 23. In other words, it is possible to detect that the subject 10, which is slightly shifted from the in-focus point with respect to the imaging lens 9, is not in the in-focus point.
尚、上述の透孔22の形成は、エツチングによ
つて形成するのみでなく、テーパ状の刃を有する
ドリルにて裏面側から穿孔してもできる。 Note that the above-described through hole 22 can be formed not only by etching but also by drilling from the back side with a drill having a tapered blade.
一方、機械加工によつて第4図の第2実施例に
示すように、光電面31側及び裏面側共に同一形
状の透孔32を設けて光電素子33を形成するこ
ともできる。 On the other hand, it is also possible to form a photoelectric element 33 by machining, as shown in the second embodiment of FIG. 4, by providing through holes 32 of the same shape on both the photocathode 31 side and the back side.
この場合においても、透孔32の前端周縁が直
接光電面31が隣接すると、照明光が通過する際
に直接光電流が流れてしまい、被写体10からの
反射光による光量測定が正確に行い難くなるので
透孔32周壁面は光電面31でない(例えば)N
層34で覆われている。この場合、透孔32に露
出する部分の光電面をコーテイング材あるいは薄
肉のパイプを嵌合させる等の遮光する手段を構じ
るようにしても良い。 Even in this case, if the front edge of the through hole 32 is directly adjacent to the photocathode 31, a direct photocurrent will flow when the illumination light passes through, making it difficult to accurately measure the amount of light from the reflected light from the subject 10. Therefore, the peripheral wall surface of the through hole 32 is not the photocathode 31 (for example) N
Covered with layer 34. In this case, a means for shielding the photocathode exposed in the through hole 32 from light, such as by fitting a coating material or a thin pipe, may be provided.
上述においては、光電素子21,33の各光電
面23,31がPN接合におけるP層側とされて
いるが、印加電圧の極性を変えれば、N層側を光
電面23,31とすることもできる。 In the above description, each photocathode 23, 31 of the photoelectric elements 21, 33 is set as the P layer side in the PN junction, but if the polarity of the applied voltage is changed, the N layer side can also be set as the photocathode 23, 31. can.
又、上述においける光電素子に使用できる光半
導体としては、シリコン、ゲルマニウム等を用い
たフオトダイオード、フオトトランジスタの他
に、大陽電池、あるいはCdS、CdSe等が使用で
きる。 Further, as the optical semiconductor that can be used in the above-mentioned photoelectric element, in addition to photodiodes and phototransistors using silicon, germanium, etc., solar batteries, CdS, CdSe, etc. can be used.
尚、太陽電池においては、バツテリが必要とさ
れない。 Note that solar cells do not require a battery.
又、フオトトランジスタにおいては三層構造と
なるが、透孔を設けることにおいては略同様の形
状となる。 Furthermore, although the phototransistor has a three-layer structure, it has approximately the same shape when providing through holes.
以上述べたように本発明によれば、被写体で反
射されて結像された投影像が合焦点からわずかに
ずれた場合においても光量面にてその光量を検出
でき、その結果、合焦点の検出および被写体の距
離測定を高精度に行うことができ、しかも照明光
が通過する際に直接光電流が流れてしまうことが
なく被写体の反射光による光量測定が正確に行う
ことができるという効果がある。 As described above, according to the present invention, even if the projected image reflected by the subject and formed is slightly shifted from the focused point, the amount of light can be detected in the light amount plane, and as a result, the focused point can be detected. Moreover, it is possible to measure the distance to the object with high precision, and there is no direct photocurrent flowing when the illumination light passes through, making it possible to accurately measure the amount of light from the reflected light from the object. .
第1図は従来のエツチングによつて形成される
光電素子の形状を示す断面図、第2図は、第1図
の光電素子を用いた既出願における合焦点検出用
の光量測定手段を示す説明図、第3図ないし第4
図は、本発明に係り、第3図は、第1実施例にお
ける光電素子を用いた合焦点検出用の光量測定手
段を示す説明図、第4図は、第2実施例を示す断
面図である。
5……ランプ、7……フアイバ、9……結像レ
ンズ、10……被写体、21,33……光電素
子、22,32……透孔、23,31……光電
面、24,34……N層。
Fig. 1 is a cross-sectional view showing the shape of a photoelectric element formed by conventional etching, and Fig. 2 is an explanation showing a light amount measuring means for detecting a focused point in a previous application using the photoelectric element of Fig. 1. Figures, Figures 3 to 4
The figures relate to the present invention; FIG. 3 is an explanatory diagram showing a light amount measuring means for detecting a focused point using a photoelectric element in the first embodiment; and FIG. 4 is a sectional view showing the second embodiment. be. 5... Lamp, 7... Fiber, 9... Imaging lens, 10... Subject, 21, 33... Photoelectric element, 22, 32... Through hole, 23, 31... Photocathode, 24, 34... ...N layer.
Claims (1)
孔を形成し、この透孔及び結像レンズ系を通して
被検体に投光し、該被検体による反対投影像を前
記光電変換面に結像することによつて光量を測定
して被検体に対する結像レンズ系の焦点位置又は
被検体の距離を測定する手段に用いられる光電素
子において、前記透孔は光電変換面側における径
又は幅がその裏面側におけるものより小さい形状
又は等しい形状に形成し、前記透孔の内壁に裏面
層となる半導体層と同質層として光電変化を生じ
させない層を設けたことを特徴とする光電素子。1 A through hole is formed in the photoelectric element provided on one side of the photoelectric conversion surface, and light is projected onto the subject through the through hole and the imaging lens system, and a reversely projected image by the subject is focused on the photoelectric conversion surface. In a photoelectric element used as a means for measuring the amount of light by imaging and measuring the focal position of an imaging lens system with respect to a subject or the distance to the subject, the through hole has a diameter or a width on the photoelectric conversion surface side. A photoelectric element formed in a shape smaller than or equal to the shape on the back side thereof, and provided with a layer on the inner wall of the through hole that does not cause a photoelectric change as a layer homogeneous with the semiconductor layer serving as the back side layer.
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57013774A JPS58131776A (en) | 1982-01-29 | 1982-01-29 | Photoelectric element |
| US06/442,087 US4538062A (en) | 1981-11-19 | 1982-11-16 | Focusing detecting device with coaxial source and detector |
| DE8282306169T DE3272935D1 (en) | 1981-11-19 | 1982-11-19 | A device for detecting the focused state of an optical system |
| EP82306169A EP0080340B1 (en) | 1981-11-19 | 1982-11-19 | A device for detecting the focused state of an optical system |
| AT82306169T ATE21778T1 (en) | 1981-11-19 | 1982-11-19 | DEVICE FOR DETECTING THE FOCUSING STATE OF AN OPTICAL SYSTEM. |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57013774A JPS58131776A (en) | 1982-01-29 | 1982-01-29 | Photoelectric element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58131776A JPS58131776A (en) | 1983-08-05 |
| JPH0353609B2 true JPH0353609B2 (en) | 1991-08-15 |
Family
ID=11842589
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57013774A Granted JPS58131776A (en) | 1981-11-19 | 1982-01-29 | Photoelectric element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58131776A (en) |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5266448A (en) * | 1975-11-28 | 1977-06-01 | Hitachi Ltd | Automatic focusing system |
-
1982
- 1982-01-29 JP JP57013774A patent/JPS58131776A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58131776A (en) | 1983-08-05 |
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