JPH0353628B2 - - Google Patents
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- Publication number
- JPH0353628B2 JPH0353628B2 JP15942081A JP15942081A JPH0353628B2 JP H0353628 B2 JPH0353628 B2 JP H0353628B2 JP 15942081 A JP15942081 A JP 15942081A JP 15942081 A JP15942081 A JP 15942081A JP H0353628 B2 JPH0353628 B2 JP H0353628B2
- Authority
- JP
- Japan
- Prior art keywords
- photoreceptor
- protective layer
- layer
- comparative example
- weight
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
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Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording-members for original recording by exposure, e.g. to light, to heat or to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/14—Inert intermediate or cover layers for charge-receiving layers
- G03G5/142—Inert intermediate layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording-members for original recording by exposure, e.g. to light, to heat or to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/14—Inert intermediate or cover layers for charge-receiving layers
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photoreceptors In Electrophotography (AREA)
Description
【発明の詳細な説明】
本発明は保護層を有する電子写真用感光体に関
するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an electrophotographic photoreceptor having a protective layer.
帯電、露光、現像等のプロセスを含む電子写真
方式において用いられる感光体としては多くのも
のが実用化されている(例えば、米国特許第
2297619号参照)。例えば、適当な導電性基板上に
有機光導電材料を塗布あるいは蒸着などにより、
直接設けたもの、あるいは上記材料を適当な有機
バインダーとともに設けたもの、あるいはバイン
ダー中にZnO、CdS、TiO2等の無機光導電材料
を分散させたもの、あるいは無定形セレン又はそ
の合金などを蒸着したもの、あるいは上記の各種
の光導電層を2層以上に積層したものなどが用い
られている(例えば特公昭45−5394号、特公昭46
−3005号、特公昭49−14271号参照)。これらの感
光体では、その電気的及び光学的性質と機械的性
質とを両立させるために、あるいはこれらの性質
を一層向上かつ安定させるために、また場合によ
つては現像等のプロセスにおける特性を向上させ
るために、感光体表面に表面層を設けることが提
案されている。この表面層の1つは保護層と称さ
れるものであつて、例えば樹脂薄膜を表面に設
け、帯電及び画像露光(カールソンプロセス)に
より潜像形成を行うものである。しかし、この様
な保護層を設けた感光体を用いると多くの場合に
高い残留電位とその大幅なサイクル上昇が見られ
る。この高い残留電位とサイクル上昇は保護層を
1μ以下にすることで、かなり改善できるが、皮
膜がはなれやすくなり、長時間の使用に耐えない
ものになる。別な表面層としては、絶縁層と称さ
れる電気抵抗の高い樹脂層を設けたものであつ
て、除電プロセスを含む特別な方法(例えば、米
国特許第3041167号参照)により潜像形成するも
のである。しかし、この絶縁層を有する感光体は
特殊な潜像形成プロセスを用いなければならず、
少なくとも2回の帯電工程を要するため、装置の
複雑化を招き問題がある。 Many photoreceptors have been put into practical use as photoreceptors used in electrophotography, which includes processes such as charging, exposure, and development (for example, U.S. Patent No.
2297619). For example, by coating or vapor depositing an organic photoconductive material on a suitable conductive substrate,
Directly deposited, or the above materials together with a suitable organic binder, or inorganic photoconductive materials such as ZnO, CdS, TiO 2 dispersed in the binder, or amorphous selenium or its alloys deposited by vapor deposition. photoconductive layers, or those in which two or more of the various photoconductive layers described above are laminated (for example, Japanese Patent Publication No. 45-5394, Japanese Patent Publication No. 46
-3005, Special Publication No. 49-14271). In order to make these photoreceptors compatible with their electrical and optical properties and mechanical properties, or to further improve and stabilize these properties, in some cases, properties in processes such as development are improved. In order to improve this, it has been proposed to provide a surface layer on the surface of the photoreceptor. One of these surface layers is called a protective layer, and for example, a resin thin film is provided on the surface and a latent image is formed by charging and image exposure (Carlson process). However, when a photoreceptor provided with such a protective layer is used, a high residual potential and a significant increase in its cycle are often observed. This high residual potential and increased cycling can cause the protective layer to
A significant improvement can be achieved by reducing the thickness to 1μ or less, but the film will peel off easily and will not be able to withstand long-term use. Another surface layer is a resin layer with high electrical resistance called an insulating layer, and a latent image is formed by a special method including a static elimination process (for example, see U.S. Pat. No. 3,041,167). It is. However, photoreceptors with this insulating layer require the use of a special latent image formation process.
Since at least two charging steps are required, there is a problem in that the device becomes complicated.
本発明は前者の保護層を設けた感光体に関する
ものであつて、特殊な潜像形成プロセスを用いる
ことなく、いわゆるカールソンプロセスで潜像の
形成が可能な感光体に関するものである。本出願
人は先に前述の欠点を解消するものとして、低抵
抗保護層の提案を行なつた(特願昭54−42118号、
同54−65671号、同54−65672号及び同54−65673
号参照)。しかし、これらの方法では106乃至
1013Ωcmの低抵抗保護層を設けることによつて10
〜20μの保護層とすることができ、又高い残留電
位及び大幅なサイクル上昇を防止できるものの、
時には感光体全体の帯電性が低下し、その結果と
して充分なコントラストを持つ画像が得られなく
なるという欠点を有し、特にこの傾向は光導電層
が高感度のものである場合に顕著であることが判
明した。 The present invention relates to the former type of photoreceptor provided with a protective layer, and more particularly, to a photoreceptor in which a latent image can be formed by a so-called Carlson process without using a special latent image forming process. The present applicant previously proposed a low resistance protective layer as a solution to the above-mentioned drawbacks (Japanese Patent Application No. 54-42118,
No. 54-65671, No. 54-65672 and No. 54-65673
(see issue). However, with these methods, 10 6 to
10 by providing a low resistance protective layer of 13 Ωcm.
Although it can be made into a ~20μ protective layer and prevents high residual potential and significant cycle increase,
Sometimes, the chargeability of the entire photoreceptor decreases, resulting in the disadvantage that images with sufficient contrast cannot be obtained, and this tendency is particularly noticeable when the photoconductive layer is of high sensitivity. There was found.
本発明の目的はこの様な欠点を確実に除去する
ことのできる電子写真用感光体を提供する事にあ
る。 An object of the present invention is to provide an electrophotographic photoreceptor that can reliably eliminate these drawbacks.
本発明の目的は導電性支持体に、光導電層、有
機金属化合物(但し、有機チタン化合物及び有機
ジルコニウム化合物を除く)を主成分として含有
する中間層、及び低抵抗保護層を順次積層してな
る電子写真用感光体により達成することができ
る。 The object of the present invention is to sequentially laminate a photoconductive layer, an intermediate layer containing an organic metal compound (excluding organic titanium compounds and organic zirconium compounds) as a main component, and a low-resistance protective layer on a conductive support. This can be achieved using an electrophotographic photoreceptor.
本発明の電子写真用感光体の構成を添付図面に
示す。図中、1は適当な有機化合物を添加した有
機高分子化合物からなる低抵抗透明保護層、2は
有機金属化合物含有中間層、3は光導電層、4は
導電性支持体である。 The structure of the electrophotographic photoreceptor of the present invention is shown in the accompanying drawings. In the figure, 1 is a low-resistance transparent protective layer made of an organic polymer compound added with a suitable organic compound, 2 is an intermediate layer containing an organometallic compound, 3 is a photoconductive layer, and 4 is a conductive support.
2の中間層は、少なくとも上層の保護層の塗布
に用いる溶剤に浸されるものであつてはならな
い。この中間層はバリヤー層としての役割の他に
光導電体と保護層との接着層としての機能を持た
せることもできる。この中間層2に適した有機金
属化合物としては、アルミニウムトリス−(アセ
チルアセトネート)、鉄トリス−(アセチルアセト
ネート)、コバルトビス−(アセチルアセトネー
ト)、鋼ビス−(アセチルアセトネート)、マグネ
シウム−ビス(アセチルアセトネート)、マンガ
ン()ビス−(アセチルアセトネート)、ニツケ
ル()−ビス(アセチルアセトネート)、パナジ
ウムトリス−(アセチルアセトネート)、亜鉛ビス
−(アセチルアセトネート)、スズビス−(アセチ
ルアセトネート)等の金属アセチルアセトネート
化合物、アルミニウムイソプロピレート、モノ
sec−ブトキシアルミニウムジイソプロピレート、
アルミニウムsec−ブチレート、バナジウムエチ
レート、バナジールn−プロピレート、バナジウ
ムイソブチレート等の金属アルコラート化合物、
及びアルミニウム−ジ−n−ブトキサイド−モノ
−エチルアセトアセテート、アルミニウムオキサ
イドオクテート、アルミニウムオキサイドステア
レート、アルミニウムオキサイドアクリレート等
の化合物を挙げることができる。これらの化合物
は、単独でも、2種以上の混合物としても用いる
ことができる。更に、接着性の改善、抵抗値の制
御、その他の理由から上記の有機金属化合物と他
の有機樹脂化合物との混合物として用いることも
できる。 At least the intermediate layer 2 must not be immersed in the solvent used to apply the upper protective layer. In addition to its role as a barrier layer, this intermediate layer can also function as an adhesive layer between the photoconductor and the protective layer. Organometallic compounds suitable for this intermediate layer 2 include aluminum tris(acetylacetonate), iron tris(acetylacetonate), cobalt bis(acetylacetonate), steel bis(acetylacetonate), magnesium -bis(acetylacetonate), manganese()bis(acetylacetonate), nickel()-bis(acetylacetonate), panadium tris-(acetylacetonate), zinc bis(acetylacetonate), tin bis- Metal acetylacetonate compounds such as (acetylacetonate), aluminum isopropylate, mono
sec-butoxyaluminum diisopropylate,
Metal alcoholate compounds such as aluminum sec-butyrate, vanadium ethylate, vanadyl n-propylate, vanadium isobutyrate,
and aluminum di-n-butoxide mono-ethylacetoacetate, aluminum oxide octate, aluminum oxide stearate, aluminum oxide acrylate, and the like. These compounds can be used alone or as a mixture of two or more. Furthermore, it can also be used as a mixture of the above organometallic compounds and other organic resin compounds for improving adhesion, controlling resistance, and for other reasons.
中間層2の膜厚は任意に設定されるが、10μm
以下、特に1μm以下が好適である。 The thickness of the intermediate layer 2 can be set arbitrarily, but it is 10 μm.
Below, 1 μm or less is particularly suitable.
この中間層の形成は、スプレー塗布、浸漬塗
布、ナイフ塗布、ロール塗布等の適宜の方法で塗
布することによつて行うことができる。 This intermediate layer can be formed by coating by an appropriate method such as spray coating, dip coating, knife coating, roll coating, or the like.
本発明の感光体の光導電層としてはSe、Se−
Te合金、Se−As合金、あるいはこれらを適当に
組合せた多層型の真空蒸着膜やポリビニルカルバ
ゾール/2,4,7−トリニトロ−9−フルオレ
ノン(PVK/TNF)等の有機光導電体、ZnOや
CdS等の無機光導電体をバインダー中に分散した
もの、あるいは電荷発生層と電荷輸送層を積層し
たもの等を使用することができる。 The photoconductive layer of the photoreceptor of the present invention includes Se, Se-
Te alloy, Se-As alloy, or a multilayer vacuum-deposited film made of an appropriate combination of these, organic photoconductors such as polyvinylcarbazole/2,4,7-trinitro-9-fluorenone (PVK/TNF), ZnO, etc.
A material in which an inorganic photoconductor such as CdS is dispersed in a binder, or a material in which a charge generation layer and a charge transport layer are laminated can be used.
また、保護層としては有機高分子化合物に適当
な有機化合物あるいは無機化合物を添加したもの
が一般に使用でき、例えば有機高分子化合物に電
子供与性化合物あるいは電子供与性化合物と電子
受容性化合物を添加した電子伝導性材料を用いた
場合、あるいは有機高分子に粒径0.3μm以下の金
属酸化物を分散した、電子伝導性材料を用いた場
合に著しい効果が得られる。具体的に言えば、こ
のような保護層に用いられる材料として、メタロ
セン及びその分子構造中に少なくとも1以上のメ
タロセン骨格を有する化合物;テトラゾール及び
その分子構造中に少なくとも1個以上のテトラゾ
ール骨格を有する化合物;平均粒径が0.3μ以下の
金、銀、アルミニウム、鉄、銅、ニツケル等の金
属粉及び酸化亜鉛、酸化チタン、酸化錫、酸化ビ
スマス、酸化インジウム、酸化アンチモン等の金
属酸化物の粉末;酸化錫と酸化アンチモンを単一
粒子中に含有する粉末等が挙げられる。 In addition, as a protective layer, a material prepared by adding an appropriate organic compound or an inorganic compound to an organic polymer compound can generally be used. A remarkable effect can be obtained when an electron conductive material is used, or when an electron conductive material in which a metal oxide with a particle size of 0.3 μm or less is dispersed in an organic polymer is used. Specifically, materials used for such a protective layer include metallocene and compounds having at least one metallocene skeleton in its molecular structure; tetrazole and compounds having at least one tetrazole skeleton in its molecular structure. Compounds: Metal powders such as gold, silver, aluminum, iron, copper, and nickel with an average particle size of 0.3μ or less, and powders of metal oxides such as zinc oxide, titanium oxide, tin oxide, bismuth oxide, indium oxide, and antimony oxide. ; Examples include powder containing tin oxide and antimony oxide in a single particle.
低抵抗保護層としては、106乃至1013Ωcmの抵抗
を有するものを用いることができる。 As the low resistance protective layer, one having a resistance of 10 6 to 10 13 Ωcm can be used.
次に比較例及び実施例をあげて本発明の電子写
真感光体を説明する。 Next, the electrophotographic photoreceptor of the present invention will be explained with reference to comparative examples and examples.
比較例 1
ポリカーボネート80重量部とジメチルフエロセ
ン20重量部をジクロルメタンに溶解させこの溶液
をAl基板上に設けたAs2Se3蒸着膜(55μ厚)上に
塗布、乾燥し、10μの保護層を有する感光体を得
た。上記の保護層を塗布する前のAs2Se3蒸着膜
を正帯電させ、初期電位を800Vにし、これを
460nmの波長の光で露光する操作を毎分40回の
速度でくり返した。この時残留電位は0Vで安定
していた。一方保護層を設けたAs2Se3蒸着膜を
前記の条件で帯電露光したところ初期電位200V
であり残留電位は100Vで安定していた。Comparative Example 1 80 parts by weight of polycarbonate and 20 parts by weight of dimethylferrocene were dissolved in dichloromethane, and this solution was applied onto an As 2 Se 3 vapor-deposited film (55 μm thick) provided on an Al substrate, dried, and a 10 μm protective layer was formed. A photoreceptor having the following was obtained. The As 2 Se 3 vapor deposited film before applying the above protective layer was positively charged to an initial potential of 800 V.
The operation of exposing to light with a wavelength of 460 nm was repeated at a rate of 40 times per minute. At this time, the residual potential was stable at 0V. On the other hand, when the As 2 Se 3 vapor-deposited film with the protective layer was charged and exposed under the above conditions, the initial potential was 200 V.
The residual potential was stable at 100V.
したがつて保護層を有するAs2Se3感光体は、
保護層を持たない感光体に較べて著しく静電コン
トラストが小さかつた。 Therefore, an As 2 Se 3 photoreceptor with a protective layer is
The electrostatic contrast was significantly smaller than that of a photoreceptor without a protective layer.
実施例 1
比較例と同様にしてAl基板上にAs2Se3蒸着膜
を形成した。次にその上にエチルアセトアセテー
トアルミニウムジイソプロピレート(商品名
ALCH、川研フアインケミカル株式会社製)1
重量部とイソプロピルアルコール10重量部とから
なる樹脂液を浸漬塗布し、50℃にて2時間乾燥し
て0.5μ厚の中間層を設けた。次いでこの上に比較
例と同じ保護層を10μ厚に設けた。この感光体を
比較例1と同じ方法にて帯電露光を繰り返したと
ころ、初期電位は910V、残留電位は105Vであつ
た。従つて静電コントラストは805Vであり、保
護層のみの感光体に比べ、その特性を著しく改善
し、保護層を持たない感光体と等しい値であつ
た。Example 1 An As 2 Se 3 vapor deposited film was formed on an Al substrate in the same manner as in the comparative example. Next, apply ethyl acetoacetate aluminum diisopropylate (trade name) on top of it.
ALCH, manufactured by Kawaken Huain Chemical Co., Ltd.) 1
A resin solution consisting of 1 part by weight and 10 parts by weight of isopropyl alcohol was applied by dip coating and dried at 50°C for 2 hours to form an intermediate layer with a thickness of 0.5 μm. Next, the same protective layer as in the comparative example was provided thereon to a thickness of 10 μm. When this photoreceptor was repeatedly charged and exposed in the same manner as in Comparative Example 1, the initial potential was 910V and the residual potential was 105V. Therefore, the electrostatic contrast was 805V, which was a significantly improved characteristic compared to a photoreceptor with only a protective layer, and was equal to the value of a photoreceptor without a protective layer.
実施例 2
比較例1と同じ方法でAl基板上にAs2Se3蒸着
膜を形成させた。次にその上に、亜鉛ビス−(ア
セチルアセトネート)2重量部、シランカツプリ
ング剤(商品名、KBM503、信越化学工業株式
会社製)1重量部及びn−ブチルアルコール20重
量部からなる樹脂液をスプレー塗布し、100℃で
30分間乾燥し、0.5μ厚の中間層を設けた。次いで
この上に比較例1と同じ保護層を10μ厚に設け
た。この感光体を比較例1と同じ方法にて帯電露
光を繰り返したところ、初期電位900V、残留電
位105Vであつた。従つてこの感光体の静電コン
トラストは795Vであり保護層を持たない感光体
と同等の値であつた。Example 2 An As 2 Se 3 vapor deposited film was formed on an Al substrate in the same manner as in Comparative Example 1. Next, on top of that, a resin solution consisting of 2 parts by weight of zinc bis(acetylacetonate), 1 part by weight of a silane coupling agent (trade name, KBM503, manufactured by Shin-Etsu Chemical Co., Ltd.) and 20 parts by weight of n-butyl alcohol. Spray and heat at 100℃.
Dry for 30 minutes to provide a 0.5μ thick intermediate layer. Next, the same protective layer as in Comparative Example 1 was provided thereon to a thickness of 10 μm. When this photoreceptor was repeatedly charged and exposed in the same manner as in Comparative Example 1, the initial potential was 900V and the residual potential was 105V. Therefore, the electrostatic contrast of this photoreceptor was 795V, which was a value equivalent to that of a photoreceptor without a protective layer.
実施例 3
比較例1と同様にしてAl基板上にAs2Se3蒸着
膜を形成させた。次にその上にコバルト()ア
セチルアセトネート1重量部とn−ブチルアルコ
ール10重量部とからなる溶液をスプレー塗布し、
50℃にて2時間乾燥して0.3μ厚の中間層を設け
た。次いでこの上に比較例1と同じ保護層を10μ
厚に設けた。Example 3 As in Comparative Example 1, an As 2 Se 3 vapor deposited film was formed on an Al substrate. Next, a solution consisting of 1 part by weight of cobalt () acetylacetonate and 10 parts by weight of n-butyl alcohol is spray applied thereon.
It was dried at 50° C. for 2 hours to form an intermediate layer with a thickness of 0.3 μm. Next, 10μ of the same protective layer as in Comparative Example 1 was applied on top of this.
Made thick.
この感光体を比較例1と同じ方法にて帯電露光
を繰り返したところ初期電位910V、残留電位
100Vであつた。従つてこの感光体の静電コント
ラストは810Vであり、保護層を持たない感光体
の静電コントラストを更に改善した。 When this photoreceptor was repeatedly charged and exposed in the same manner as in Comparative Example 1, the initial potential was 910V, and the residual potential was
It was 100V. Therefore, the electrostatic contrast of this photoreceptor was 810V, which further improved the electrostatic contrast of a photoreceptor without a protective layer.
比較例 2
ポリアリレート樹脂(商品名、Uポリマー、ユ
ニチカ製)80重量部とフエロセン20重量部をジク
ロルメタンに溶解した。この溶液を長さ300mmの
Al円筒上に設けたSe(50μ厚)蒸着膜及びSe−Te
合金蒸着膜(1μ厚)よりなる二層型の光導電体
の上に塗布乾燥し、15μの保護層を有する感光体
を得た。この感光体を比較例1と保じ方法で帯電
露光を繰返したところ初期電位は400Vで、残留
電位は90Vで安定していた。Comparative Example 2 80 parts by weight of polyarylate resin (trade name, U Polymer, manufactured by Unitika) and 20 parts by weight of ferrocene were dissolved in dichloromethane. Apply this solution to a length of 300 mm.
Se (50μ thick) vapor deposited film and Se-Te on Al cylinder
It was coated on a two-layer photoconductor made of a vapor-deposited alloy film (1 μm thick) and dried to obtain a photoreceptor having a 15 μm thick protective layer. When this photoreceptor was charged and exposed repeatedly in the same manner as in Comparative Example 1, the initial potential was 400V and the residual potential was stable at 90V.
一方、上記と同じSe/Se−Te二層蒸着膜から
なる感光体を保護層を塗布せずにそのまま上記の
条件で帯電露光したところ初期電位は900V、残
留電位は10Vであつた。従つて保護層を有する
Se/Se−Te二層感光体は保護層を持たない感光
体に較べて静電コントラストが著しく小さかつ
た。 On the other hand, when a photoreceptor made of the same Se/Se-Te double-layer vapor deposited film as above was charged and exposed under the above conditions without coating with a protective layer, the initial potential was 900V and the residual potential was 10V. therefore has a protective layer
The Se/Se-Te two-layer photoreceptor had significantly lower electrostatic contrast than the photoreceptor without a protective layer.
実施例 4
比較例2と同様にして、Al円筒上にSe/Se−
Te合金二層蒸着膜からなる感光層を形成させた。
ついでその層上に、亜鉛ビス−(アセチルアセト
ネート)1重量部とn−ブタノール10重量部から
なる溶液をスプレー塗布し、40℃で3時間乾燥し
て0.3μ厚の中間層を設けた。次いでこの上に比較
例2と同じ保護層を15μ厚に設けた。この感光体
を比較例2と同じ方法で帯電露光を繰り返したと
ころ初期電位は990V、残留電位は100Vであつ
た。従つてこの感光体の静電コントラストは
890Vとなり、保護層のない感光体と同じであつ
た。この感光体を用いて磁気ブラシ現像法による
コピーテストを行なつたところ、露光パターンと
同一の極めて詳明な画像が得られた。Example 4 Se/Se- was deposited on an Al cylinder in the same manner as Comparative Example 2.
A photosensitive layer consisting of a two-layer deposited Te alloy film was formed.
A solution consisting of 1 part by weight of zinc bis(acetylacetonate) and 10 parts by weight of n-butanol was then spray coated onto the layer and dried at 40 DEG C. for 3 hours to form an intermediate layer having a thickness of 0.3 .mu.m. Next, the same protective layer as in Comparative Example 2 was provided thereon to a thickness of 15 μm. When this photoreceptor was repeatedly charged and exposed in the same manner as in Comparative Example 2, the initial potential was 990V and the residual potential was 100V. Therefore, the electrostatic contrast of this photoreceptor is
The voltage was 890V, which was the same as that of a photoreceptor without a protective layer. When a copy test was conducted using this photoreceptor using a magnetic brush development method, an extremely detailed image identical to the exposed pattern was obtained.
比較例 3
比較例2と同じSe/Se−Te二層蒸着膜よりな
る感光体の上に、ポリウレタン樹脂(関西ペイン
ト社製、レタン4000)固形分70重量部に対し粒径
0.1μm以下の酸化スズ30重量部を加えて分散した
樹脂液を塗布乾燥し10μの保護層とした。この感
光体を比較例1と同じ方法にて帯電露光を繰り返
したところ、初期電位150V、残留電位85Vであ
り、著しく静電コントラストが少なかつた。Comparative Example 3 A polyurethane resin (manufactured by Kansai Paint Co., Ltd., Rethane 4000) having a particle size of 70 parts by weight solids was placed on a photoreceptor made of the same Se/Se-Te double-layer vapor deposited film as in Comparative Example 2.
A resin solution containing 30 parts by weight of tin oxide having a particle diameter of 0.1 μm or less was applied and dried to form a protective layer of 10 μm. When this photoreceptor was repeatedly charged and exposed in the same manner as in Comparative Example 1, the initial potential was 150 V, the residual potential was 85 V, and the electrostatic contrast was significantly low.
実施例 5
比較例2と同様なるSe/Se−Te二層感光層の
上にエチルアセテートアルミニウムジイソプロピ
レート(商品名、ALCH、川研フアインケミカ
ル社製)1重量部とn−ブタノール10重量部より
なる溶液を浸漬塗布し、0.5μ厚の中間層を設け
た。次いでこの上に比較例3と同じ保護層を10μ
厚に設けた。この感光体を比較例1と同じ方法に
て帯電露光を繰り返したところ、初期電位990V、
残留電位100Vで安定していた。従つて静電コン
トラストは890Vとなり、保護層のない感光体に
等しかつた。Example 5 1 part by weight of ethyl acetate aluminum diisopropylate (trade name: ALCH, manufactured by Kawaken Fine Chemical Co., Ltd.) and 10 parts by weight of n-butanol were placed on the same Se/Se-Te double-layer photosensitive layer as in Comparative Example 2. A 0.5 μm thick intermediate layer was provided by dip coating a solution consisting of 1.5 μm. Next, 10 μm of the same protective layer as in Comparative Example 3 was applied on top of this.
Made thick. When this photoreceptor was repeatedly charged and exposed in the same manner as in Comparative Example 1, the initial potential was 990V,
The residual potential was stable at 100V. Therefore, the electrostatic contrast was 890V, which was equivalent to a photoreceptor without a protective layer.
この感光体を用いて磁気ブラシ現像法によるコ
ピーテストを行なつたところ露光パターンと同一
の極めて鮮明な画像が得られた。 When a copy test was conducted using this photoreceptor using a magnetic brush development method, an extremely clear image identical to the exposed pattern was obtained.
図面は本発明の電子写真用感光体の構成を示
す。
図中符号:1……低抵抗透明保護層;2……中
間層;3……光導電層;4……導電性支持体。
The drawings show the structure of the electrophotographic photoreceptor of the present invention. Symbols in the figure: 1...Low resistance transparent protective layer; 2...Intermediate layer; 3...Photoconductive layer; 4...Electroconductive support.
Claims (1)
物(但し、有機チタン化合物及び有機ジルコニウ
ム化合物を除く)を主成分として含有する中間
層、及び低抵抗保護層を順次積層してなる電子写
真用感光体。1 Electrophotography formed by sequentially laminating a photoconductive layer, an intermediate layer containing an organic metal compound (excluding organic titanium compounds and organic zirconium compounds) as a main component, and a low-resistance protective layer on a conductive support. Photoreceptor for use.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15942081A JPS5860748A (en) | 1981-10-08 | 1981-10-08 | Electrophotographic receptor |
| GB08221347A GB2106659B (en) | 1981-07-28 | 1982-07-23 | Electrophotographic photosensitive materials |
| DE3228218A DE3228218C2 (en) | 1981-07-28 | 1982-07-28 | Electrophotographic recording materials |
| US06/402,700 US4444862A (en) | 1981-07-28 | 1982-07-28 | Electrophotographic photosensitive materials having layer of organic metal compound |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15942081A JPS5860748A (en) | 1981-10-08 | 1981-10-08 | Electrophotographic receptor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5860748A JPS5860748A (en) | 1983-04-11 |
| JPH0353628B2 true JPH0353628B2 (en) | 1991-08-15 |
Family
ID=15693349
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15942081A Granted JPS5860748A (en) | 1981-07-28 | 1981-10-08 | Electrophotographic receptor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5860748A (en) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0711707B2 (en) * | 1985-12-19 | 1995-02-08 | 富士ゼロックス株式会社 | Electrophotographic photoconductor |
| JPH0711714B2 (en) * | 1985-12-19 | 1995-02-08 | 富士ゼロックス株式会社 | Electrophotographic photoconductor |
| JPH0711712B2 (en) * | 1985-12-19 | 1995-02-08 | 富士ゼロックス株式会社 | Electrophotographic photoconductor |
| JPH0711708B2 (en) * | 1985-12-19 | 1995-02-08 | 富士ゼロックス株式会社 | Electrophotographic photoconductor |
| JPH0711709B2 (en) * | 1985-12-19 | 1995-02-08 | 富士ゼロックス株式会社 | Electrophotographic photoconductor |
| JPH0711710B2 (en) * | 1985-12-19 | 1995-02-08 | 富士ゼロックス株式会社 | Electrophotographic photoconductor |
| JPH0711713B2 (en) * | 1985-12-19 | 1995-02-08 | 富士ゼロックス株式会社 | Electrophotographic photoconductor |
| JPH0711711B2 (en) * | 1985-12-19 | 1995-02-08 | 富士ゼロックス株式会社 | Electrophotographic photoconductor |
| JPS63239459A (en) * | 1986-11-28 | 1988-10-05 | Ricoh Co Ltd | electrophotographic photoreceptor |
-
1981
- 1981-10-08 JP JP15942081A patent/JPS5860748A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5860748A (en) | 1983-04-11 |
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