JPH0353833U - - Google Patents
Info
- Publication number
- JPH0353833U JPH0353833U JP11529789U JP11529789U JPH0353833U JP H0353833 U JPH0353833 U JP H0353833U JP 11529789 U JP11529789 U JP 11529789U JP 11529789 U JP11529789 U JP 11529789U JP H0353833 U JPH0353833 U JP H0353833U
- Authority
- JP
- Japan
- Prior art keywords
- reaction chamber
- vapor phase
- growth apparatus
- infrared lamp
- phase growth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001947 vapour-phase growth Methods 0.000 claims description 7
- 239000010453 quartz Substances 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 239000000498 cooling water Substances 0.000 claims 2
- 238000001228 spectrum Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Description
第１図は本考案に係る気相成長装置の第１の実
施例の断面図、第２図は第１の実施例の平面図、
第３図は赤外線ランプのスペクトル及び水の光透
過率を示すグラフ、第４図は反応室の壁での光強
度分布を示すグラフ、第５図は本考案に係る気相
成長装置の第２の実施例の断面図、第６図は第２
の実施例の平面図、第７図、第８図、第９図は従
来の気相成長装置の断面図である。
１……基板、３……反応室、５……赤外線ラン
プ、７……石英パイプ、８……流路。
FIG. 1 is a sectional view of a first embodiment of a vapor growth apparatus according to the present invention, FIG. 2 is a plan view of the first embodiment,
Fig. 3 is a graph showing the spectrum of an infrared lamp and the light transmittance of water, Fig. 4 is a graph showing the light intensity distribution on the wall of the reaction chamber, and Fig. 5 is a graph showing the second vapor phase growth apparatus according to the present invention. FIG. 6 is a cross-sectional view of the embodiment of
The plan view of the embodiment, FIG. 7, FIG. 8, and FIG. 9 are cross-sectional views of a conventional vapor phase growth apparatus. 1... Substrate, 3... Reaction chamber, 5... Infrared lamp, 7... Quartz pipe, 8... Channel.
Claims (1)
、該反応室の外部に設けられた赤外線ランプとを
備えた気相成長装置において、 前記赤外線ランプに対向する側の前記反応室の
外壁面に、冷却用の水路が局所的に設けられてい
ることを特徴とする気相成長装置。 ２ 一部または全部が透明石英からなる反応室と
、該反応室の外部に設けられた赤外線ランプとを
備えた気相成長装置において、 前記赤外線ランプに対向する側の前記反応室の
壁内に、冷却用の水路が局所的に設けられている
ことを特徴とする気相成長装置。 ３ 前記赤外線ランプの光強度が小さい部分にの
み、前記水路が設けられている請求項１または請
求項２記載の気相成長装置。[Claims for Utility Model Registration] 1. A vapor phase growth apparatus equipped with a reaction chamber partially or entirely made of transparent quartz and an infrared lamp provided outside the reaction chamber, the side facing the infrared lamp. A vapor phase growth apparatus characterized in that cooling water channels are locally provided on the outer wall surface of the reaction chamber. 2. In a vapor phase growth apparatus equipped with a reaction chamber partially or entirely made of transparent quartz and an infrared lamp provided outside the reaction chamber, in the wall of the reaction chamber on the side opposite to the infrared lamp. , a vapor phase growth apparatus characterized in that cooling water channels are locally provided. 3. The vapor phase growth apparatus according to claim 1 or 2, wherein the water channel is provided only in a portion where the light intensity of the infrared lamp is low.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11529789U JPH0353833U (en) | 1989-09-29 | 1989-09-29 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11529789U JPH0353833U (en) | 1989-09-29 | 1989-09-29 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0353833U true JPH0353833U (en) | 1991-05-24 |
Family
ID=31663629
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11529789U Pending JPH0353833U (en) | 1989-09-29 | 1989-09-29 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0353833U (en) |
-
1989
- 1989-09-29 JP JP11529789U patent/JPH0353833U/ja active Pending