JPH035391A - Semiconductor single crystal production device - Google Patents

Abstract

PURPOSE:To improve the quality by disposing a temp. averaging member between a focus heating unit and a multiple crystal semiconductor lacated at the focus position of the unit and moving the focus position successively to melt and solidify the semiconductor multiple crystal body into a single crystal. CONSTITUTION:Between the focus heating unit 101 and the multiple crystal body 10, such as GaAs, a part of which is located in the focus position, the temp. an averaging member 11 made of tubular material of high melting point and high thermal conductivity, such as Mo, is disposed coaxially with the multiple crystal body 10. The multiple crystal body 10 is uniformly heated by the temp. averaging member 11 which once absorbs the heat to be collected at the focus sent from the focus heating unit 101 and gets high temp. By this heating, the temp. of the bar-shaped multiple crystal body 10 is uniformly raised in the peripheral direction, and the melting area is formed at the central position of the temp. averaging member 11. In this case, there are three cases: the case in which the focus heating unit 101 is fixed and the multiple crystal body 10 is moved, the case in which the multiple crystal body 10 is fixed and the forcus heating unit 101 is moved, and the case in which both are moved.

Description

[Detailed description of the invention] [Purpose of the invention] (Industrial application field) The present invention relates to a semiconductor single crystal manufacturing apparatus.

In particular, the traveling heater method
HaatarMethod: abbreviated as THM),
or the traveling solvent method (Travelli
The present invention relates to a semiconductor single crystal manufacturing apparatus using the ng 5olvent Method (abbreviated as TSM).

(Prior Art) A semiconductor single crystal manufacturing apparatus using the conventional THM method or TSM method will be described with reference to FIGS. 3 and 4.

With this semiconductor single crystal manufacturing apparatus and this apparatus, for example, G
The third state is the state in which a semiconductor polycrystalline material such as aAs is made into a single crystal.
It is shown in a perspective view in the figure. As shown in FIG. 3, a part of the semiconductor polycrystalline body 100 (hereinafter abbreviated as polycrystalline body) is positioned at the focal point position of the torus-shaped focal heating device section 101, and the focal heating device section 101 or Polycrystalline 1
00 to cause the polycrystalline body 100 to sequentially pass through the focal position. The movement is achieved by a movement mechanism 102 that is used for general linear movement. As a result of this movement, the rod-shaped polycrystalline body 100, for example, is melted and solidified from one end to the other end to become a single crystalline body.

Next, FIG. 4 shows a cross-sectional view of the focal heating device section 101 of the single crystal manufacturing apparatus. In the figure, a rod-shaped polycrystalline body 10
0 is always located at the focus position (center) of the focus heating device section 101 and is moved by the moving mechanism 102 from left to right in the figure at a predetermined speed. After melting and solidification, a single crystal is obtained.

(Problem to be Solved by the Invention) The focal point of the focal heating device is extremely small, and when trying to uniformly heat a polycrystal, the diameter of the polycrystal is small compared to the size of the focal heating device. must be done. On the other hand, if the size of the raw material is increased, there is a serious problem that the raw material will be out of focus and cannot be heated uniformly, leading to a decrease in the quality of the semiconductor material produced.

In view of the above-mentioned problems with conventional devices, the present invention provides an improved structure of a semiconductor single crystal manufacturing device that can uniformly heat raw materials.6 [Structure of the Invention] (Means for Solving the Problems) The semiconductor single crystal manufacturing apparatus of the present invention includes a polycrystalline body partially positioned at a focus position of a focus heating device section, and a step of gradually melting the polycrystalline body by sequentially moving the focus position onto the polycrystalline body.
A moving mechanism for moving at least one of the focal heating device section or the polycrystalline body in order to solidify and convert the polycrystalline body into a single crystal, and a temperature equalizing member disposed between the focal heating device section and the polycrystalline body. It is something.

(Function) An isothermal member made of a material with a high melting point and high thermal conductivity is placed between the focal heating device section and the polycrystalline body placed at the center of the unit, and the molten part of the polycrystalline body is homogeneous. The goal is to make the world more popular.

(Example) Hereinafter, one example of the present invention will be described with reference to FIGS. 1 and 2. These FIGS. 1 and 2 correspond to FIGS. 3 and 4 in the conventional example, respectively, and parts that are the same as in the conventional example are given the same reference numerals as those in the conventional example. The description will be omitted.

As shown in the figure, a cylindrical temperature-uniforming member 11 is disposed coaxially with the polycrystalline body 10 between the focal point heating device section 101 and a polycrystalline body 10 such as GaAs, which is partially located at the focal point position. . This temperature-isolating member 11 is made of a material with a high melting point and high thermal conductivity, for example, molybdenum, and once absorbs the heat of the focus heating device section 101 to be focused at the focal point, it becomes an isothermal and high-temperature equalizer. The polycrystalline body 10 is uniformly heated by the heating member 11 . By this heating, the temperature of the rod-shaped polycrystalline body rises evenly, especially in the circumferential direction, and a uniform temperature melting zone is formed at the center of the temperature uniform member.

In addition, in the example of soft soil, the focal heating device section 101 is fixed and the polycrystalline body 10 is moved, but the invention is not limited to this, and the reverse, that is, the polycrystalline body 10 is moved.
may be fixed and the focus heating device section 101 may be moved, or both may be moved together.

〔Effect of the invention〕

According to the present invention, the drawbacks of conventional semiconductor single crystal manufacturing equipment in which only small polycrystals can be used due to the narrow isothermal zone, low manufacturing efficiency, and poor quality of the obtained single crystals can be overcome. can be improved. That is, regarding the size of the polycrystalline body, the rod-shaped polycrystalline body of the conventional example has a diameter of 10 m.
There are remarkable effects such as the ability to achieve a diameter of more than 20m+++ with good efficiency and quality, whereas the diameter was previously limited to less than 20m. The invention also has the advantage of being easy to implement and relatively inexpensive to achieve.

[Brief explanation of drawings]

1 and 2 show an embodiment of the present invention, in which FIG. 1 is a perspective view for explaining a semiconductor single crystal manufacturing device, FIG. 2 is a sectional view of the semiconductor single crystal manufacturing device, and FIG. 3 is a sectional view of the semiconductor single crystal manufacturing device. 4 is a perspective view for explaining a conventional semiconductor single crystal manufacturing apparatus, and FIG. 4 is a sectional view of the conventional semiconductor single crystal manufacturing apparatus.

Claims (1)

[Claims] A semiconductor polycrystalline body is partially positioned at the focal point of a focal point heating device, and the focal point position is sequentially moved onto the semiconductor polycrystalline body to gradually melt and solidify the semiconductor polycrystalline body to form a single crystal. A semiconductor single crystal manufacturing apparatus comprising: a moving mechanism for moving at least one of a focal heating device section or a semiconductor polycrystalline body; and a temperature isotherm member disposed between the focal heating device section and the semiconductor polycrystalline body. .