JPH0355549A - Novel photosensitive compound - Google Patents
Novel photosensitive compoundInfo
- Publication number
- JPH0355549A JPH0355549A JP1191945A JP19194589A JPH0355549A JP H0355549 A JPH0355549 A JP H0355549A JP 1191945 A JP1191945 A JP 1191945A JP 19194589 A JP19194589 A JP 19194589A JP H0355549 A JPH0355549 A JP H0355549A
- Authority
- JP
- Japan
- Prior art keywords
- group
- compound
- ring
- general formula
- bis
- Prior art date
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Abstract
Description
(産業上の利用分野)
本発明は、例えば半導体デバイス製造等に用いるフォト
リソグラフィ用感光剤等として有用な、新規な感光性化
合物に関するものである。
(発明の背景)
近年、半導体デバイスの高密度大集積化に伴い、微細加
工、中でもフォトリソグラフィに用いる露光装置の使用
波長は益々短波長化し、今では、KrFエキシマレーザ
(248.4nm)が検討されるまでになってきている
。しかしながら、この波長に適した感光材料は未だ適当
なものがなかった。
現在広く知られているレジストで、KrFエキシマレー
ザに対してかなり感光性が高く、光透過率もよいと言わ
れているMP2400 (シブレイ社製)を用いた場合
でも、現像後のパターン形状は非常に悪く、使用出来そ
うにもない。
例えば、MP2400を用いて、KrFエキシマレーザ
露光でパターンを形成した場合について第4図を用いて
説明すると、まず、Si基板1上にMP2400を回転
塗布し、ホットプレートにて90℃で2分間ブレベーク
を行った後、1.2μ軒厚のレジスト膜3を得る{第4
図(a)}。次に248.4nmのκrFエキシマレー
ザ4をマスク5を介して選択的に露光する{第4図(b
)}。最後に、MP2401 (シブレイ社製)の20
%水溶液(アルカリ性)を用いて60秒間現像を行うこ
とにより柑脂パターン3aが得られる{第4図(C)}
。
ところがMP2400を用いた場合、この波長の光に対
して感度が悪いため相当露光量を大きくする必要があり
、結果として未露光部まで光が入り込み、パターン3a
の形状が第4図(C)に示されるように大幅に劣化して
、アスベクト比は60度程度しか得られなかった。
このようにパターン形状が悪い原因は、MP2400レ
ジストの露光光に対する表面吸収が大きいことに起因し
ていると考えられる。
このことは、レジストに用いられているメインボリマー
(樹脂)自身が露光光に対して大きな光吸収性を持って
いるかレジスト中の感光材料の光反応性か良くないため
である。即ち、従来のレジストに使用されているナフト
キノンジアジド系の感光材料は、一般に248.4nm
付近の光に対して吸収が大きく、また、露光後の透過率
も殆どよくならない。例えば、膜厚I JLIIのMP
2400では、κrFエキシマレーザ( 248.4n
Il)を用いた露光前後の光透過率変化は、第5図に示
すように248.4nmにおいてわずか数%程度であり
、反応性が悪いことが理解される。
従って、248.4nmのエキシマレーザに対してより
反応性の高い感光材料の出現が、言い換えれば、同レー
ザに対してより光反応性の高い感光剤の出現が待ち望ま
れている現状にある。
このような目的のために開発された感光剤としては、例
えばグレイにより報告されているで示される基を有する
化合物がある(米国特許第4.622,283号),,
シかしながら、この特許明細書に於て具体的に開示され
ている化合物は、ヒ記した基の両端の官能基が、単なる
アルキル基、アリール基若しくは両端が結合してアルキ
レン環を形成しているもの等であり、これらの化合物を
感光剤とするレジストをフォトソソグラフィに用いた場
合、未露光部のアルカリ現像液に対する阻止能が強いと
は考えられず、多量のレジスト膜減りを起こし、それに
伴って、コントラストの低下が起こることが予測され,
必ずしも実用的な感光剤とは言い難い。
(発明の目的)
本発明は上記した如き状況に鑑みなされたもので、24
8.4nmのエキシマレーザに対して光反応性に著しく
優れた新規な感光性化合物を提供することを目的とする
。
〔発明の構成〕
本発明は、一般式[1]
−SO3H又は−SO3R5を表わし(但し、13.
R4は夫々独立して水素原子又は置換基を有していても
よいアルキル基を表わすか、又はR3.R4及びNとで
ビペラジン環、ビベリジン環、ビロリジン環又はモルホ
リン環等の如き環を形成していてもよく、R5はアルキ
ル基を表わす。また、−SO2CI、−SO28r及び
−503Hはその第4級塩を含む。)、Yは水素原子、
アルキル基、アルコキシ基又はハロゲン原子表わし(但
し、H6, R?は夫々独立して水素原子又は置換基を
有していてもよいアルキル基を表わすか、又は16.
R7及びNとでビベラジン環、ビベリジン環、ビロリジ
ン環又はモルホリン環等の如き環を形成していてもよく
、R8はアルキル基を表わす。また、−So2CI、−
SO2Br及び−SO,Hはその第4級塩を含む。)、
Y゜は水素原子、アルキル基、アルコキシ基又はハロゲ
ン原子を表わし、2゜は水素原子、アルキル基、アルコ
キシ基又はハロゲン原子を表わす.}、m,Qびnは1
〜20の整数を表わす(但し、Y及びY゜が共に水素原
子である場合を除く.)。]で示される化合物の発明で
ある。
しては1〜20の整数が挙げられる。
また、
R1に
よ〈、これらと第4級塩を形成し得る塩基としては、例
えばアンモニア、ビリジン、ビベラジン、ビペリジン、
N−メチルピロリジン、モルホリン、原子、例えばメチ
ル基.エチル基,プロビル基,ブチル基,アミル基,ヘ
キシル基,ヘブチル基,オクチル基,ノニル基,デシル
基等のアルキル基(直鎖状或は分枝状の何れにてもよい
。)又はこれらアルキル基に水酸基,アルコキシ基(例
えばメトキシ基.エトキシ基等)等の置換基がついたも
の等が挙げられ、Rs. R4及びNとでビベラジン環
、ピベリジン環、ビロリジン環又はモルホリン環等の如
き環を形成していてもよい。−SO.R5に於けるR5
としては例えばメチル基,エチル基,プロビル基.ブチ
ル基.アミル基,ヘキシル基,ヘプチル基.オクチル基
,ノニル基.デシル基等のアルキル基(直鎖状或は分校
状の何れにてもよい。)が挙げられる。
また、R′に於けるY及びR2に於けるY゛としては水
素原子、例えばメチル基,エチル基,プロビル基,ブチ
ル基,アミル基,ヘキシル基,ヘブチル基,オクチル基
,ノニル基,デシル基等のアルキル基(直鎖状或は分校
状の何れにてもよい。)例えばメトキシ基,エトキシ基
,ブロポキシ基,ブトキシ基.アミルオキシ基,ヘキシ
ルオキシ基,ヘブチルオキシ基,オクチルオキシ基,ノ
ニルオキシ基,デシルオキシ基等のアルコキシ基(直鎖
状或は分枝状の何れにてもよい。)、沃素,臭素,塩素
等のハロゲン原子が挙げられ、互いに同じであっても異
なっていてもよく(但し、Y及びY”が共に水素原子で
ある場合を除く。)、R′に於ける2及びR2に於ける
2゛としては水素原子、例えばメチル基,エチル基,プ
ロビル基,ブチル基.アミル基.ヘキシル基,ヘプチル
基,オクチル基,ノニル基,デシル基等のアルキル基(
直頑状或は分枝状の何れにてもよい.)、例えばメトキ
シ基,エトキシ基,ブロポキシ基,ブトキシ基.アミル
オキシ基,ヘキシルオキシ基,ヘブチルオキシ基,オク
チルオキシ基,ノニルオキシ基.デシルオキシ基等のア
ルコキシ基(直鎖状或は分枝状の何れにてもよい。)、
沃素,塩素,臭素等のハロゲン原子が挙げられ、互いに
同じであっても異なっていてもよい。また、R2に於け
るX゜として水素−S01R8が挙げられ、−so2C
i、−SO2Br及び−SO3Hはその第4級塩となっ
ていてもよく、これらと第4級塩を形成し得る塩基とし
ては、例えばアンモニア、ビリジン、ピベラジン、ピベ
リジン、N−メチ基,エチル基,プロビル基,ブチル基
,アミル基,ヘキシル基,ヘプチル基,オクチル基,ノ
ニル基,デシル基等のアルキル基(直鎖状或は分枝状の
何れにてもよい.)又はこれらアルキル基に水酸基,ア
ルコキシ基(例えばメトキシ基,エトキシ基等)等の置
換基がついたもの等が挙げられ、また、R6. R7及
びNとでビベラジン環、ピベリジン環、ビロリジン環又
はモルホリン環等の如き環を形成していてもよい。−5
03R8に於けるR8としては例えばメチル基,エチル
基,プロビル基,ブチル基,アミル基,ヘキシル基,ヘ
ブチル基,オクチル基.ノニル基,デシル基等のアルキ
ル基(直鎖状或は分枝状の何れにてもよい。)が挙げら
れる。
一般式[1]で示される本発明化合物には、下記一般式
[II]、[1及び[IV]で示される化合物が含まれ
る。
(式中、x, x’、Y, Y’、m及びnは前記に同
じ。)
(式中、X, X’、Y, 2’、m及びnは前記に同
じ。)
(式中、x, x’、Z,1”、m及びnは前記に同じ
.)本発明に係る化合物の製法を一般式[11]で示さ
れる化合物の場合を例にして示すと以下の如くなる。
(式中、Y、
Y’,m及びnは前記に同じ。
)
(式中、
Y;
Y’,m及びnは前記に同じ。
)
(式中、M及びM′は共にーS02αを表わすか、若し
くは何れか一方が−So2Clを表わし、他方は水素原
子を表わす。また、Y, Y’、m及びnは前記に同し
。)
即ち、先ず、一般式[n−1]で示される化合物C以下
、化合物(II−1]と略記する。)に塩基の存在下ジ
アゾ化剤を作用させると、一般式[II]に於いてX及
びX゛が水素原子の木発明化合物(以下、化合物[11
−2] と略記する。)が得られ、次いでこれにクロ
ルスルホン酸を反応させると、一般式[II1に於いて
XとX“が共に−SO2aであるか、若しくはいずれか
一方が−SO2αで他方が水素原子である本発明化合物
が得られる。
ジアゾ化反応は、通常、化合物[II−17と化合#[
II−17 1モル当たり 0.5〜3モル、好ましく
は 0.8〜1.5モルのジアゾ化剤と、化合物[II
[−1] 1モル当たり 0.5〜5モル、好ましく
は0.8〜1.5モルの塩基とを適当な反応溶媒中、−
10〜30℃、好ましくは−5〜lO℃で15分乃至5
時間、好ましくは1〜2時間反応させることによりなさ
れる。
ジアゾ化反応に於いて用いられる反応溶媒としては、例
えばエタノール,イソプロバノール等のアルコール類、
例えばエチルエーテル.イソプロビルエーテル,テトラ
ヒドロフラン等のエーテル類、例えば塩化メチレン.ク
ロロホルム,四塩化炭素,1,2−ジクロロエタン等の
ハロゲン化炭化水素類、例えばn−ヘキサン,シクロヘ
キサン,トルエン等の炭化水素類等が挙げられ、ジアゾ
化剤としては例えばp−トルエンスルホニルアジド、ベ
ンゼンスルホニルアジド、2−アジドー3−エチルベン
ゾチアゾリウムフルオロボレート等が挙げられ、塩基と
しては例えばビベリジン,トリエチルアミン.N−メチ
ノレヒ゜ロリジン,N−メチノレモノレホリン,ビリジ
ン.ジエチルアミン等の有機塩基、例えばNaOCH3
, NaOC2H5,κQC(C}13)3, KOC
2t{s等のアルコラート類、金属ナトリウム、水素化
ナトリウム、水素化カリウム等が挙げられる。
また、クロルスルホン化反応は、化合物[ n −2]
と化合物[II−211モル当たり1〜20モル、好
ましくは2.5〜9.0モルのクロルスルホン酸とを溶
媒の存在下又は不存在下に−20〜20℃、好ましくは
ーlO〜5℃で、15分乃至5時間、好ましくは1〜2
時間反応させればよい。
クロルスルホン化反応に於て用いられる反応溶媒として
はクロルスルホン化反応を阻害することなく、且つそれ
自身がクロルスルホン化される?れのない有機溶媒であ
れば特に限定されないが、例えば四塩化炭素,四塩化エ
タン.クロロホルム,1.2−ジクロロエタン,塩化メ
チレン等のハロゲン化炭化水素類や、二硫化炭素等が、
通常好まレ〈用いられる。
このようにして得られたSO20!体を、例えば常法に
より加水分解すれば、一般式[1Fに於て、X, X’
が−SO,H(又はXと×゛のいずれか一方が−50,
I+ テ他方カ−SOzCl ) 、或はXとX’+7
)イずれか一方が−5038で他方が水素原子の本発明
化合物が得られる。また、加水分解の代りに加アルコー
ル分解すれば、XがーS03R5 (R’は前記と同じ
.)でX゜が−503R8(R8は前記に同じ.)(又
はXとX”のいずれか一方が−SO3R5(R8)で他
方がーSO■(f),或は×とX゛のいずれか一方が−
SO3RS(R8)で他方が水素原子の本発明化合物が
得られる。更に、加水分解や加アルコール分解する代り
に、 SO2a体をアンモニア、或は例えばモノメチル
アミン.モノエチルアミン,モノブロビルアミン,モノ
ブチルアミン,モノベンチルアミン,ジメチルアミン,
ジエチルアミン.ジブロビルアミン,モノエタノールア
ミン.ジエタノールアミン等の脂肪族アミンや、の本発
明化合物が得られる。
化合物[11−1]は、例えば一般式
(式中、Qは塩素原子、臭素原子又は沃素原子を表わし
、Y及びmは前記に同じ。)
で示される化合物及び一般式
”G(CH2)。−1−Q
《式中、Q, Y’及びnは前記に同じ。〉で示される
化合物と2.4−ペンタンジオンとを、例えばシクロヘ
キサン、n−ヘキサン、トルエン、イソブロビルエーテ
ル等の溶媒中、例えばn−ブチルリチウム.リチウムジ
イソブロビルアミド.リチウム、l.1.l,3,3.
3−ヘキサメチルジシラザン, KH/n−BuLi,
NaH/n−BuLi等の縮合剤を用いて低温、例え
ばlO℃以下で反応させれば容易に得られるので、この
ようにして得たものを用いれば足りる。
また、化合物[■一11は、例えば、一般式(式中、Y
及びmは前記と同じ。)で示されるケトン類と一般式
(式中、R゛はアルキル基を表わし、Y゜及びnは前記
と同じ.)で示されるエステル類とを、金属ナトリウム
,水素化ナトリウム,金属アルコキシド等の存在下に縮
合反応させることによっても容易に得られるから、この
ようにして得たものを用いても良い。
また、その他の本発明化合物も同様の方法により合成し
得る。即ち、例えば、化合物[■−11の代りに、一般
式[II[−1]
(式中、Y, Z’、m及びnは前記に同じ。)で示さ
れる化合物(以下、化合物[II1−1]と略記する。
)を出発物質として用い、前記合成法に準じて合成を行
えば一般式[[]で示される本発明化合物が容易に得ら
れるし、化合物[II−1]の代りに、一般式[IV−
13
(式中、Z, Z’、m及びnは前記に同じ。)で示さ
れる化合物(以下、化合物[IV−1]と略記する。)
を出発物質として用い、前記合成法に準じて合成を行え
ば一般式[■]で示される本発明化合物が容易に得られ
る。
化合物[II1−1]及び化合物[IV−1]は、化合
物[II−1]の合成方法に準じて合成すれば容易に得
られるので、このようにして得たものを用いれば足りる
。即ち、化合物[II1−1]は、例えば一般式
(式中、Y,Q及びmは前記に同じ。)で示される化合
物及び一般式
IcO(cH2)。−+−Q
(式中、2゜、Q及びnは前記に同じ。)で示される化
合物と2.4−ペンタンジオンとを前記した化合物[1
−1]の合成方法に準じて縮合反応させるか、或は例え
ば一般式
(式中、YFjLびmは前記に同じ。)で示されるケト
ン類と一般式
(式中、l゜、R゛及びnは前記に同じ。)で示される
エステル類とを前記した化合物[11−11の合成方法
C準じて縮合反応させることにより容易に得られるので
このようにして得たものを用いれば足りる。また、化合
物[IV−1]は、例えば一般式
(式中、Z,Q及びmは前記に同じ。〉で示される化合
物及び一般式
2″−co−(CH2)n−1−Q
(式中、2゛、Q及びnは前記に同じ。)で示される化
合物と2.4−ペンタンジオンとを前記した化合物[I
I−1]の合成方法に準じて縮合反応させるか、或は例
えば一般式
(式中、Z及びmは前記に同じ。)
で示されるケトン類と一般式
?式中、2゜、R゛及びnは前記に同じ。)で示される
エステル類とを前記した化合物[1−11の合成方法に
準じて縮合反応させることにより容易に得られるのでこ
のようにして得たものを用いれば足りる。
一般式[11で示される本発明化合物は248.4nm
光に対する反応性が大きい。即ち露光前後における透過
率変化が大きく(約50%以上)、更に露光後の透過率
も70%以上と大きい。また、一般式[I] に於てR
lのX, R2のX゜の内の少なくとも一方がーSO■
α、−so■B『又は−SO.Hである化合物を−OH
基を含む樹脂と混合した感光材料では、塗布後加熱する
と、架橋反応が進行し、現像液に対して、樹脂の溶解性
を減少させる効果がある。
従って、これをレジスト等の材料として用いることによ
り、形状の良い樹脂パターンを得ることができる。
紫外光(DeepUV光)
例えばエキシマレーザ
?とになる。従って、本発明の化合物を含んだ感光材料
はその先照射部分のみがアルカリ可溶性となり、所謂ポ
ジ型となる。
ところが一般のボジ型レジスト材料は、感光物質・樹脂
・溶媒の組合せであり、樹脂はアルカリ可溶性のノボラ
ック樹脂等が主に用いられる。
従って、感光物質は未露光部のノボラック樹脂のアルカ
リ可溶性を抑制出来ることが望ましい。
一般式[I]に於てR1のX, R2の×゜の内の少な
くとも一方がーSO2α、−50,Or又はー5031
1である感光性化合物は、その点、末端基にーSO■α
、一SO■Br、−SO.H等の官能基が1乃至2個存
在しているため、加熱することにより樹脂のアルカリ可
溶部で合等をそれぞれ作るために架橋が進行し、樹脂の
アルカリ可溶性を抑えることができる。従って、感光材
料に用いたとき未露光部の膜減りの問題は、大幅に改善
される。
また、本発明の化合物は、その分子内にiGH2)−等
のメチレン鎖を有しているため、分子全体が安定化され
ており、そのことが本発明化合物の熱安定性を向上させ
ている。そして。このことがまた、本発明化合物を、保
存安定性に優れた、工業的な量産が可能な物質としてい
る。
ベンゼン環上の置換位置は、メチレン基を1位とした場
合、2〜6位の何れにてもよく、また、ナフタレン環ヒ
の置換位置も1−ナフチル基の場合には2〜8位の、ま
た2−ナフチル基の場合には1位又は3〜8位の何れで
もよく、いずれの場合も感光剤としての効果に大差はな
い。また、メチレン鎖の長さもm=1〜20,n=1〜
20の何れの組み合わせでも同様に効果に大差はない。
以下に参考例、実施例及び応用例を挙げて本発明を更に
詳細に説明するが、本発明はこれらによって何等制約を
受けるものではない。
〔実施例〕
参考例1.p−トルエンスルホニルアジド(トシルアジ
ド)の合成
アジ化ナトリウム22.5g (0.35モル)を少量
の水に溶解させた後、90%含水エタノール1:] O
mf!で希釈した。次いで10〜25℃でp一トルエン
スルホニルクロライド60g (0.32モル)を溶解
させたエタノール溶液を滴下し、室温下、 2.5時間
撹拌反応させた。反応液を室温下減圧濃縮し、残渣油状
物を数回水洗した後無水MgSO4で乾燥した。乾燥剤
を枦去し、p一トルエンスルホニルアジド50.7gを
無色油秋物として得た。
’ }INMRδP pffi( C DQ 1) ’
2 − 4 3 (3 H ,S :C H z )
> 7 − 2 4(2H, d, J・8Hz,
phenyl −C3. Os), 7.67 (2
}1,d,J−8Hz. phenyl−C2.C6)
。
IR(Neat) : 2120cm” (−N3)
。
参考例2.1.7−ビス(4−メチルフェニル)−3.
5−へプタンジオンの合成
シクロヘキサン +00rnl中に60%水素化ナ1・
リウム90gを仕込み、これに20〜25℃で2.4−
ベンタンジオン 195.2g (1.95モル)を溶
解したシクロヘキサン溶液を滴下し、同温度で40分間
撹拌反応させた。次いでN,N,N’,N’−テトラメ
チルエチレンジアミン483gを注入後−S〜0℃でn
−ブチルリチウムの!.6M n−ヘキサン溶液177
8gを滴下し更に室温まで昇温し24時間反応させた。
次いでこの反応液にO〜5℃で塩化4−メチルベンジル
635.4 gを滴下し、1夜放置した後、希塩酸中に
注入した。静置、分液して有機層を分取し、数回水洗し
た後無水MgSO4で乾燥した。乾燥剤を枦去後溶媒留
去して橙赤色油状物568gを得、これをエタノールよ
り再結晶して1.7−ビス(4−メチルフエニル)−3
.5−ヘブタンジオン155gを白色針状晶として得た
。mp. 74.8〜75.7℃。
!11NMRδI)l)In(CDCft3) : 2
J1(6!t,s,Ar−%X 2 ) ,2.55(
4}1, t, J・8Hz,Ar−cH.(:H,(
:O−X 2),2.88(4t{,t, J−8Hz
, Ar−C!LICH211:0−X 2), 3.
50(2H,s.−GOCH.GO− :ケト型 1/
10) ,5.43(IN,s, −C=CH−co−
:エノール型 9/10), 7.04 〜7.11
(8N,m.芳香環×2), 15.43(IH, b
s, −Q(enol)),IR (KBr vI.)
: 1620cm−’ (G欝Q)。
実施例1.1.7−ビス(3−クロルスルホニル−4−
メチルフェニル)−4−ジアゾー3.5−へブタンジオ
ン(一般式[II]に於て、Y−Y’−CH3, X−
X’=−so.ct, msn.2の化合物)の合成(
1)1.7−ビス(4−メチルフェニル)一4−ジアゾ
ー3.5−へブタンジオンの合成
参考例2で得た1.7−ビス(4−メチルフエニル)−
3.5−ヘプタンジオン 112.8g (366 ミ
リモル〉を塩化メチレン73(7!IC溶解しビベリジ
ン31.1g (366ミリモル)を加えた後、o〜5
℃で参考例1で得たp一トルエンスルホニルアジド75
.6g (380ミリモル)を滴下し、更に同温度で2
時間撹拌反応させた。反応液を希カセイヵリ水溶?で洗
浄後、数回水洗し無水MgSO4で乾燥した。
乾燥剤な枦去後溶媒留去して褐色油状物129gを得た
。次いで残渣油状物をエタノールより再結晶し、!,7
′−ビス(4−メチルフェニル)−4−ジアゾー3,5
−へブタンジオン103gを微黄色プリズム晶として得
た。mp.45.6〜46.8℃。
’HNMRδppm(CDα3) : 2.31(6}
1,S,Ar−CHX 2).2 .88〜3 . 0
5 (8H ,m,Ar−GJC%GO−X 2) .
7 . 10 (8N ,s .芳香環×2).
IR(κBri):2100cr’(−CN2), 1
660c『’(C■0)。
t2) 1.7−ビス(3−クロルスルホニル−4−メ
チルフェニル)−4−ジアゾー3,5−へブタンジオン
(一般式[11]i.:於て、Y−Y’調−(:H3,
X’X”−SO2C1, tn−n■2の化合物沖合
成クロルスルホン酸251g中に!1)で得た1.7−
ビス(4−メチルフェニル)−4−ジアゾー3.5−ヘ
プタンジオン90g (269ミリモル)を溶解したク
ロロホルム溶液をO〜5℃で滴下し、同温度で1時間撹
拌反応させた。反応液を氷水5.52中に注入後クロロ
ホルム抽出し、分取したクロロホルム層を?回水洗した
後無水MgS04で乾燥した。乾燥剤を枦去後溶媒留去
して残渣の油状物を得た。次いで油状物をカラム分ra
[シリカゲル:ワコーゲルC−200 (和光純薬工業
■製),溶離液:n−ヘキサン/酢酸エチル=1/1
(v/v) ] t,、1.7−ビス(3−クロルスル
ホニル−4−メチルフェニル)−4一ジアゾー3,5−
へブタンジオン30gを淡黄色粘稠油状物として得た。
’I−INMRδppa+(CDCta) : 2.7
4 (6H,s,Ar−CH,x 2) ,3.04
〜3.08(8B,m,Ar−C%CHIGO−x2)
, 7.34(211,d,J■8Hz. pheny
l−C,,x2). 7.49(2H,dd,J−2H
z及びJ−8Hz, phenyl−GsX2), 7
.90(28,d,J・2Hz. phenyl−C.
X2)。
IR(Neat) : 2110cm−’ (CN2)
, 1650cm−’ ((:■0)。
UV(CH3CN)λa+ax(ε) : 233.
1r+n+(27550)。
元素分析値(C21H20α2N20[IS2)理論値
: C%,47.46 : Hネ,3.79; N!!
,5.27実測値: C$,47.54 ; H主,3
.99. N!Ii,5.21,実8例2.1.7−ビ
ス(3−メトキシスルホニル−4−メチルフェニル)−
4−ジアゾー3,5−へブタンジオン(一般式[II]
に於て、Y =Y’=−CH.t. X・X’・−SO
3CH3. m−n72の化合物)の合戊実施例1の(
2)で得た1.7−ビス(3−クロルスルホニル−4−
メチルフェニル)−4−ジアゾー3.5−へプタンジオ
ン3.1g (5.8ミリモル)をメタノール25一及
び塩化メチレン40−に溶解させ、これに5〜10℃で
トリエチルアミン1。7gを滴下した。
室温で8時間撹拌反応させた後、減圧濃縮し残渣を塩化
メチレン36(lat!で希釈し、数回水洗後無水Mg
SO4で乾燥した。乾燥剤を枦去後溶媒留去し残渣の粗
油状物2.9gをカラム分離[シリカゲル:ワコーゲル
C−200,溶離液:n−ヘキサン/酢酸エチル=5/
1 →3/1 −)2/1(V/V)] L/、1.7
−ビス(3−メトキシスルホニル−4−メチルフエニル
)一4−ジアゾー3,5−へブタンジオン 1.9gを
微黄色粘稠油状物として得た。
’ HNMRδppm (CDα3) : 2.60(
6}1,S,Ar−i1l,X 2),3.01 〜3
.05(8M,m,Ar−CIjICii,Go−X2
). 3.74(6H,s,−SO3CHix2),
7.28 (2H,d,J−8Hx, phenyl−
Cs x2), 7.40(2B,dd, J−8Hz
,及びJ12}1x, phenyl−C6x 2)
.7.82 (2tl,d,J−2Hx.phenyl
−C2X 2)。
In(Neat) : 2120cm−’ (1;N,
) , 1640cm−’ (C−0)。
UV (CH3(:N) λmax(ε) :225
.4nl1l(29060)。
元素分析値(CzzHzsNzOA5z)理論値: C
%,52.86 . 8’!,5.01 . rl,
5.36実測値: C!k,52.74 : H%,
5.24. N!k, 5.26。
実施例3.1.7−ビス(3−エトキシスルホニル−4
−メチルフエニル)−4−ジアゾー3.5−へブタンジ
オン(一般式 [II]ニ於て、Y−Y’−OH,,
X−X’−−5031;2H5, III=n−2の化
合物〉の合成実施例1の(2)で得た1.7−ビス(3
−クロルスルホニル−4−メチルフェニル)−4−ジア
ゾー3,5−へブタンジオン700mg (1.3ミリ
モル)をエタノール2〇一及び塩化メチレン8−に溶解
した溶液に、5〜10℃でトリエチルアミン 365B
を滴下し、以下、実施例2と同様にして反応及び後処理
を行い、粗油状物700Bを得た。これをカラム分離[
シリカゲル:ワコーケルC−200,溶離液:n−ヘキ
サン/酢酸エチル=571 −+3/!(v/v)]
L/、l97−ビス(3−エトキシスルホニル−4−メ
チルフエニル)一4−ジアゾー3,5−へプタンジオン
450mgを微黄色粘稠油状物として得た。
’ HNMRδppm(CDCi3) : 1.32(
6H,t,J・7Hx,−SO3CH2CH1x2),
2.61(6H,s, Ar−ell, x2),
3.01〜3,08(8H,m,八r−CHCHCO−
X2), 4.10 (4H,q,J−7HZjS
03CtjlCH3X 2) . 4.27 (2H,
d,Js8Hz,phenyl−C,,x 2),7.
39(2H,dd,J・2Hz及びJ−8Hz, ph
enyl−Csx 2)7.82(2H,d,J・2H
z, phenyl−C2x 2).IR(Neat)
: 2110cm” (CN2) , 1645cm
−’ (C−0)。
UV(Cll3CN)λmax(ε) :225 .4
nm (309 10)。
元素分析値 (C2sHsoN20sS2)理論値:
C%,54.53 : H%,5.49. N亀, 5
.09実測値: C!6.54.46 ; H亀,5
.56; N96, 5.14。
実施例4.1.7−ビス(3−N,N−ジエチルアミノ
スルホニル−4−メチルフエニル)−4−ジアゾー3.
5−へブタンジオン(一般式[03に於て、Y−Y’・
一(:H3,X・X’・−SOzN(hhh. m −
n ’2の化合物)の合成実施例工の(2)で得た1.
7−ビス(3−クロルスルホニル−4−メチルフェニル
)−4−ジアゾー3,5ーへブタンジオン700mg
(1.3ミリモル)をアセトニトリル15−に溶解し、
5〜10℃でN,N−ジエチルアミン1gを滴下した。
次いで室温で10時間撹拌反応させた後、減圧濃縮し、
残渣を塩化メチレン40−で希釈し、数回水洗後無水M
gSO4で乾燥した。乾燥剤を枦去後溶媒留去し、残渣
の粗油状物800mgをカラム分離[シリカゲル:ワコ
ーゲル(:−200,溶離液:n−ヘキサン/酢酸エチ
ル=5/l→2/l(v/v)1シ、1.7−ビス(3
−N,N−ジエチルアミノスルホニル−4−メチルフエ
ニル)−4−ジアゾー3.5−へプタンジオン380t
agを微黄色粘稠油状物として得た。
I HNMRδI)Pln(CDCt3): 1.12
(1211.t,J・7Hz,N−CH2C!lLlx
4), 2.55(61{,s,Ar−CHx2),
2.96 〜3.08(8H,n+,−GHCi(:O
−X2), 3.30 (811,Q,J・7HZ,N
〜CしCIL+ X4),7.20(2H,d,J・8
Hz,phenyl−(:,X2), 7.28(2H
,d,J・8tlZ, phenyl−C6X2),
7.76(2H,s,phenyl−C,X2)。
IR(Neat) : 2120c『’ (−CN2)
, 1650c『’{CW=0)。
UV (C,H3CN) λwax (ε):227
.2r+m(30810)。
元素分析値 (CzqH4oN406S2)理論値:
C96,57.59 ; H!!,6.67: N%.
9.26実測値: C*,57.71 . H亀,
6.42 : N!Ii. 9.50。
実施例5.1.7−ビス(4−メチル−3−スルホフエ
ニル)−4−ジアゾー3.5−へブタンジオン(一般式
[II] に於て、Y−Y’冒−GH3, X−X’場
−503H, m ”n −2の化合物)の合成
実施例1の{2)で得た1.7−ビス(3−クロルスル
ホニル−4−メチルフエニル)−4−ジアゾー3.5一
へブタンジオン 1.4g (2.6ミリモル)をテト
ラヒドロフラン401d及び水40FRl中に添加し、
室温下48時間撹拌反応させた。反応液を塩化メチレン
で数回洗浄した後、減圧乾固し、1.7−ビス(4−メ
チル−3−スルホフェニル)−4−ジアゾー3,5−へ
ブタンジオンl.2gを淡黄色粘稠油状物として得た。
I HNMRδpp@(GOα,−DMSO−d.)
: 2.48 (6H,s,イbx 2) .2.80
(4H.t,J・7Hz.−CjjlGO−x 2)
. 3.04(4H,t,J・7Hz.八r−Ch−
X 2) , 4.98(2H,bs,−SOs!jx
2),7.02〜7.14(4H,m,phenyl
−CsJ:6X2), 7.60(2tl,s,phe
nyl−G2x 2)。
IR(Neat) : 2110cm−I(−CN2)
, 1630cm−’(G−0)。
元素分析値(C2+Ht2N20aSz)理論値: (
J,51.00 . H$,4.48. N!4, 5
.66実測値: C!k,50.82 ; H%,4
.73 . N!k, 5.93,実施例6.1.7−
ビス(4−メチル−3−スルホナトフェニル)−4−ジ
アゾー3,5−へブタンジオン ジアンモニウム塩(一
般式(Industrial Application Field) The present invention relates to a novel photosensitive compound useful as a photosensitizer for photolithography used, for example, in the manufacture of semiconductor devices. (Background of the Invention) In recent years, with the high density and large integration of semiconductor devices, the wavelength used by exposure equipment used for microfabrication, particularly photolithography, has become increasingly shorter, and now KrF excimer laser (248.4 nm) is being considered. It's getting to the point where it's being done. However, there has not yet been a photosensitive material suitable for this wavelength. Even when using MP2400 (manufactured by Sibley), which is a currently widely known resist that is said to have fairly high photosensitivity to KrF excimer laser and good light transmittance, the pattern shape after development is very poor. It's so bad that I don't think it will be usable. For example, the case where a pattern is formed by KrF excimer laser exposure using MP2400 will be explained with reference to FIG. After doing this, a resist film 3 having a thickness of 1.2 μm is obtained {4th
Figure (a)}. Next, a 248.4 nm κrF excimer laser 4 is selectively exposed through a mask 5 {Fig. 4(b)
)}. Finally, 20 of MP2401 (manufactured by Sibley)
% aqueous solution (alkaline) for 60 seconds, the citrus pattern 3a is obtained {Figure 4 (C)}
. However, when using MP2400, the sensitivity to light of this wavelength is poor, so it is necessary to increase the exposure amount, and as a result, light penetrates into the unexposed areas, causing pattern 3a.
As shown in FIG. 4(C), the shape was significantly deteriorated, and an aspect ratio of only about 60 degrees was obtained. The reason why the pattern shape is so poor is considered to be due to the large surface absorption of the exposure light of the MP2400 resist. This is because the main polymer (resin) used in the resist itself has a large light absorption property for exposure light, or the photoreactivity of the photosensitive material in the resist is poor. That is, naphthoquinonediazide-based photosensitive materials used in conventional resists generally have a wavelength of 248.4 nm.
The absorption of nearby light is large, and the transmittance after exposure is hardly improved. For example, MP of film thickness I JLII
2400, κrF excimer laser (248.4n
The change in light transmittance before and after exposure using Il) is only about a few percent at 248.4 nm, as shown in FIG. 5, and it is understood that the reactivity is poor. Therefore, the present situation is such that the appearance of a photosensitive material that is more reactive to the 248.4 nm excimer laser, or in other words, the appearance of a photosensitive agent that is more photoreactive to the same laser, is eagerly awaited. Photosensitizers developed for this purpose include, for example, compounds having the groups shown by Gray (US Pat. No. 4,622,283).
However, in the compounds specifically disclosed in this patent specification, the functional groups at both ends of the group described above are simple alkyl groups, aryl groups, or both ends are bonded to form an alkylene ring. When resists containing these compounds as photosensitizers are used in photolithography, it is unlikely that they will have a strong blocking ability against alkaline developers in unexposed areas, resulting in a large amount of resist film loss. , it is predicted that the contrast will decrease accordingly.
It is difficult to say that it is necessarily a practical photosensitizer. (Object of the invention) The present invention was made in view of the above-mentioned circumstances, and
The purpose of the present invention is to provide a novel photosensitive compound that has significantly excellent photoreactivity to 8.4 nm excimer laser. [Structure of the Invention] The present invention represents the general formula [1] -SO3H or -SO3R5 (provided that 13.
R4 each independently represents a hydrogen atom or an alkyl group which may have a substituent, or R3. R4 and N may form a ring such as a viperazine ring, a biverizine ring, a virolidine ring or a morpholine ring, and R5 represents an alkyl group. Moreover, -SO2CI, -SO28r and -503H include their quaternary salts. ), Y is a hydrogen atom,
Represents an alkyl group, an alkoxy group, or a halogen atom (however, H6, R? each independently represents a hydrogen atom or an alkyl group which may have a substituent, or 16.
R7 and N may form a ring such as a biverazine ring, a biverizine ring, a virolidine ring or a morpholine ring, and R8 represents an alkyl group. Also, −So2CI, −
SO2Br and -SO,H include their quaternary salts. ),
Y° represents a hydrogen atom, an alkyl group, an alkoxy group, or a halogen atom, and 2° represents a hydrogen atom, an alkyl group, an alkoxy group, or a halogen atom. }, m, Qbin is 1
Represents an integer of ~20 (excluding cases where Y and Y° are both hydrogen atoms). ] This is an invention of a compound represented by. is an integer from 1 to 20. Furthermore, bases that can form quaternary salts with R1 include, for example, ammonia, pyridine, biverazine, biperidine,
N-methylpyrrolidine, morpholine, an atom such as a methyl group. Alkyl groups (which may be linear or branched) such as ethyl group, proyl group, butyl group, amyl group, hexyl group, hebutyl group, octyl group, nonyl group, decyl group, or these alkyl groups Examples include those in which a substituent such as a hydroxyl group or an alkoxy group (eg, methoxy group, ethoxy group, etc.) is attached to the group, and Rs. R4 and N may form a ring such as a biverazine ring, a piverizine ring, a virolidine ring, or a morpholine ring. -S.O. R5 in R5
For example, methyl group, ethyl group, proyl group. Butyl group. Amyl group, hexyl group, heptyl group. Octyl group, nonyl group. Examples include alkyl groups (which may be linear or branched) such as decyl group. Further, Y in R' and Y in R2 are hydrogen atoms, such as methyl group, ethyl group, proyl group, butyl group, amyl group, hexyl group, hebutyl group, octyl group, nonyl group, decyl group. Alkyl groups (which may be linear or branched) such as methoxy, ethoxy, propoxy, and butoxy groups. Alkoxy groups such as amyloxy group, hexyloxy group, hebutyloxy group, octyloxy group, nonyloxy group, decyloxy group (which may be linear or branched), halogen atoms such as iodine, bromine, chlorine, etc. may be the same or different (however, except when Y and Y" are both hydrogen atoms), and 2 in R' and 2' in R2 are hydrogen atoms. atoms, such as methyl group, ethyl group, probyl group, butyl group, amyl group, alkyl group such as hexyl group, heptyl group, octyl group, nonyl group, decyl group, etc.
It can be either straight or branched. ), for example, methoxy group, ethoxy group, propoxy group, butoxy group. Amyloxy group, hexyloxy group, hebutyloxy group, octyloxy group, nonyloxy group. Alkoxy groups such as decyloxy groups (which may be linear or branched),
Examples include halogen atoms such as iodine, chlorine, and bromine, which may be the same or different. In addition, hydrogen -S01R8 is mentioned as X° in R2, -so2C
i, -SO2Br and -SO3H may be their quaternary salts, and bases that can form quaternary salts with them include, for example, ammonia, pyridine, piperazine, piperidine, N-methy group, ethyl group. , proyl group, butyl group, amyl group, hexyl group, heptyl group, octyl group, nonyl group, decyl group (which may be linear or branched), or to these alkyl groups. Examples include those with substituents such as hydroxyl group, alkoxy group (eg, methoxy group, ethoxy group, etc.), and R6. R7 and N may form a ring such as a biverazine ring, a piverizine ring, a virolidine ring, or a morpholine ring. -5
R8 in 03R8 is, for example, a methyl group, an ethyl group, a probyl group, a butyl group, an amyl group, a hexyl group, a hebutyl group, an octyl group. Examples include alkyl groups (which may be linear or branched) such as a nonyl group and a decyl group. The compounds of the present invention represented by the general formula [1] include compounds represented by the following general formulas [II], [1, and [IV]. (In the formula, x, x', Y, Y', m and n are the same as above.) (In the formula, X, X', Y, 2', m and n are the same as above.) (In the formula, x, x', Z, 1", m and n are the same as above.) The method for producing the compound according to the present invention is shown below using the compound represented by the general formula [11] as an example. ( In the formula, Y, Y', m and n are the same as above.) (In the formula, Y; Y', m and n are the same as above.) (In the formula, M and M' both represent -S02α , or one of which represents -So2Cl and the other represents a hydrogen atom; Y, Y', m and n are the same as above.) That is, first, a compound represented by the general formula [n-1] C, hereinafter abbreviated as compound (II-1)) is reacted with a diazotizing agent in the presence of a base to form a wooden invention compound (hereinafter, compound [11
-2]. ) is obtained, and then when this is reacted with chlorosulfonic acid, a compound of the general formula [II1 in which both X and X" are -SO2a, or one of which is -SO2α and the other is a hydrogen atom The invention compound is obtained. The diazotization reaction is usually carried out by combining compound [II-17 and compound #[
II-17 0.5 to 3 mol, preferably 0.8 to 1.5 mol of diazotizing agent per mol of compound [II
[-1] 0.5 to 5 mol per mol, preferably 0.8 to 1.5 mol of base in a suitable reaction solvent, -
10 to 30°C, preferably -5 to 10°C for 15 minutes to 5
This is done by reacting for a period of time, preferably 1 to 2 hours. Examples of reaction solvents used in the diazotization reaction include alcohols such as ethanol and isoprobanol;
For example, ethyl ether. Ethers such as isopropyl ether and tetrahydrofuran, such as methylene chloride. Examples include halogenated hydrocarbons such as chloroform, carbon tetrachloride, and 1,2-dichloroethane, hydrocarbons such as n-hexane, cyclohexane, and toluene, and examples of diazotizing agents include p-toluenesulfonyl azide and benzene. Examples include sulfonyl azide, 2-azido-3-ethylbenzothiazolium fluoroborate, and examples of the base include viveridine, triethylamine. N-methynorehydrolidine, N-methynoremonorephorin, pyridine. Organic bases such as diethylamine, e.g. NaOCH3
, NaOC2H5, κQC(C}13)3, KOC
Examples include alcoholates such as 2t{s, sodium metal, sodium hydride, potassium hydride, and the like. In addition, the chlorosulfonation reaction is performed using the compound [ n -2]
and 1 to 20 mol, preferably 2.5 to 9.0 mol, of chlorosulfonic acid per 1 mol of compound [II-21] in the presence or absence of a solvent at -20 to 20°C, preferably -1O to 5 ℃ for 15 minutes to 5 hours, preferably 1 to 2 hours.
All you have to do is let it react over time. As a reaction solvent used in the chlorosulfonation reaction, does it not inhibit the chlorsulfonation reaction and can itself be chlorosulfonated? There are no particular limitations on organic solvents as long as they are free of organic solvents, such as carbon tetrachloride, ethane tetrachloride, etc. Halogenated hydrocarbons such as chloroform, 1,2-dichloroethane, methylene chloride, carbon disulfide, etc.
Usually preferred. SO20 obtained in this way! For example, if the body is hydrolyzed by a conventional method, the general formula [1F, X, X'
is -SO, H (or either X and ×゛ is -50,
I+ te and the other ka-SOzCl), or X and X'+7
) A compound of the present invention is obtained in which one of the atoms is -5038 and the other is a hydrogen atom. Also, if alcoholysis is performed instead of hydrolysis, X is -S03R5 (R' is the same as above) and X° is -503R8 (R8 is the same as above) (or either X and is -SO3R5 (R8) and the other is -SO■ (f), or either × or X゛ is -
A compound of the present invention in which the other is a hydrogen atom in SO3RS (R8) is obtained. Furthermore, instead of hydrolysis or alcoholysis, the SO2a form can be treated with ammonia or, for example, monomethylamine. Monoethylamine, monobrobylamine, monobutylamine, monobenthylamine, dimethylamine,
Diethylamine. Dibrobylamine, monoethanolamine. Aliphatic amines such as diethanolamine and the compounds of the present invention are obtained. Compound [11-1] is, for example, a compound represented by the general formula (wherein Q represents a chlorine atom, a bromine atom, or an iodine atom, and Y and m are the same as above) and a general formula "G(CH2). -1-Q [In the formula, Q, Y' and n are the same as above] and 2,4-pentanedione are mixed in a solvent such as cyclohexane, n-hexane, toluene, isobrobyl ether, etc. , for example n-butyllithium.lithium diisobrobylamide.lithium, l.1.l,3,3.
3-hexamethyldisilazane, KH/n-BuLi,
It can be easily obtained by reacting with a condensing agent such as NaH/n-BuLi at a low temperature, for example, 10° C. or lower, so it is sufficient to use the product obtained in this way. In addition, the compound [■-111 is, for example, the general formula (in the formula, Y
and m are the same as above. ) and esters represented by the general formula (in the formula, R represents an alkyl group, and Y and n are the same as above) are combined with sodium metal, sodium hydride, metal alkoxide, etc. Since it can be easily obtained by carrying out a condensation reaction in the presence of the compound, the product obtained in this manner may also be used. Other compounds of the present invention can also be synthesized by similar methods. That is, for example, instead of compound [■-11, compound represented by the general formula [II[-1] (wherein, Y, Z', m and n are the same as above) (hereinafter, compound [II1-1]) The compound of the present invention represented by the general formula [[] can be easily obtained by using the compound [II-1] as a starting material and performing the synthesis according to the synthesis method described above. , general formula [IV-
13 (wherein Z, Z', m and n are the same as above) (hereinafter abbreviated as compound [IV-1])
The compound of the present invention represented by the general formula [■] can be easily obtained by performing the synthesis according to the above-mentioned synthesis method using as a starting material. Compound [II1-1] and compound [IV-1] can be easily obtained by synthesizing compound [II-1] according to the method for synthesizing compound [II-1], so it is sufficient to use those obtained in this way. That is, compound [II1-1] is, for example, a compound represented by the general formula (wherein Y, Q and m are the same as above) and the general formula IcO(cH2). The above compound [1
-1], or for example, a ketone represented by the general formula (wherein YFjL and m are the same as above) and a general formula (where l゜, R゛ and It can be easily obtained by condensation reaction of esters represented by (n is the same as above) according to the synthesis method C of the above-mentioned compound [11-11], so it is sufficient to use the compound obtained in this way. Compound [IV-1] is, for example, a compound represented by the general formula (wherein Z, Q and m are the same as above) and a compound represented by the general formula 2''-co-(CH2)n-1-Q (formula 2, Q and n are the same as above) and 2,4-pentanedione are combined into the above compound
I-1], or by performing a condensation reaction according to the synthesis method of [I-1], or, for example, by using a ketone represented by the general formula (wherein Z and m are the same as above) and the general formula? In the formula, 2°, R′ and n are the same as above. ) can be easily obtained by subjecting them to a condensation reaction according to the synthesis method of the above-mentioned compound [1-11], so it is sufficient to use the compound obtained in this way. The compound of the present invention represented by the general formula [11] has a wavelength of 248.4 nm.
Highly responsive to light. That is, the change in transmittance before and after exposure is large (approximately 50% or more), and the transmittance after exposure is also as large as 70% or more. Furthermore, in the general formula [I], R
At least one of X of l and X゜ of R2 is -SO■
α, -so■B ``or -SO. A compound that is H -OH
When a photosensitive material mixed with a resin containing a group is heated after coating, a crosslinking reaction proceeds, which has the effect of reducing the solubility of the resin in a developer. Therefore, by using this as a material for a resist or the like, a well-shaped resin pattern can be obtained. Ultraviolet light (Deep UV light) For example, excimer laser? It becomes. Therefore, in the photosensitive material containing the compound of the present invention, only the previously irradiated portion becomes alkali-soluble, and becomes a so-called positive type material. However, general positive resist materials are a combination of a photosensitive material, a resin, and a solvent, and the resin used is mainly an alkali-soluble novolak resin. Therefore, it is desirable that the photosensitive material can suppress the alkali solubility of the novolak resin in the unexposed area. In general formula [I], at least one of X in R1 and ×° in R2 is -SO2α, -50,Or or -5031
1, the photosensitive compound has -SO■α at the terminal group.
, -SO■Br, -SO. Since one or two functional groups such as H are present, crosslinking proceeds to form bonds in the alkali-soluble portion of the resin by heating, thereby suppressing the alkali solubility of the resin. Therefore, when used in photosensitive materials, the problem of film thinning in unexposed areas can be significantly improved. Furthermore, since the compound of the present invention has a methylene chain such as iGH2)- in its molecule, the entire molecule is stabilized, which improves the thermal stability of the compound of the present invention. . and. This also makes the compound of the present invention a substance that has excellent storage stability and can be industrially mass-produced. The substitution position on the benzene ring may be any of the 2nd to 6th positions when the methylene group is the 1st position, and the substitution position on the naphthalene ring is also the 2nd to 8th position in the case of a 1-naphthyl group. In the case of a 2-naphthyl group, it may be at the 1st or 3rd to 8th positions, and there is no significant difference in the effect as a photosensitizer in either case. Also, the length of the methylene chain is m = 1 ~ 20, n = 1 ~
Similarly, there is no significant difference in the effect of any of the 20 combinations. The present invention will be described in more detail below with reference to reference examples, examples, and application examples, but the present invention is not limited in any way by these. [Example] Reference example 1. Synthesis of p-toluenesulfonyl azide (tosyl azide) After dissolving 22.5 g (0.35 mol) of sodium azide in a small amount of water, 90% aqueous ethanol 1:] O
mf! diluted with Next, an ethanol solution in which 60 g (0.32 mol) of p-toluenesulfonyl chloride was dissolved was added dropwise at 10 to 25°C, and the mixture was reacted with stirring at room temperature for 2.5 hours. The reaction solution was concentrated under reduced pressure at room temperature, and the residual oil was washed with water several times and then dried over anhydrous MgSO4. The drying agent was removed to obtain 50.7 g of p-toluenesulfonyl azide as a colorless oil. ' }INMRδP ffi (CDQ 1) '
2-4 3 (3H,S:CHz)
> 7 - 2 4 (2H, d, J・8Hz,
phenyl-C3. Os), 7.67 (2
}1, d, J-8Hz. phenyl-C2. C6)
. IR (Neat): 2120cm” (-N3)
. Reference example 2.1.7-bis(4-methylphenyl)-3.
Synthesis of 5-heptanedione 60% sodium hydride in cyclohexane +00rnl 1.
2.4-
A cyclohexane solution in which 195.2 g (1.95 mol) of bentanedione was dissolved was added dropwise, and the mixture was stirred and reacted at the same temperature for 40 minutes. Then, after injecting 483 g of N,N,N',N'-tetramethylethylenediamine, the n
-Butyllithium! .. 6M n-hexane solution 177
8 g was added dropwise, the temperature was further raised to room temperature, and the mixture was reacted for 24 hours. Next, 635.4 g of 4-methylbenzyl chloride was added dropwise to this reaction solution at 0 to 5°C, and after being left overnight, it was poured into dilute hydrochloric acid. The organic layer was separated by standing, washed several times with water, and then dried over anhydrous MgSO4. After removing the drying agent, the solvent was distilled off to obtain 568 g of an orange-red oil, which was recrystallized from ethanol to give 1.7-bis(4-methylphenyl)-3.
.. 155 g of 5-hebutanedione were obtained as white needles. mp. 74.8-75.7°C. ! 11NMRδI)l)In(CDCft3): 2
J1(6!t,s,Ar-%X2),2.55(
4}1, t, J・8Hz, Ar-cH. (:H, (
:O-X 2), 2.88(4t{,t, J-8Hz
, Ar-C! LICH211:0-X 2), 3.
50 (2H, s.-GOCH.GO-: Keto type 1/
10) ,5.43(IN,s, -C=CH-co-
: Enol type 9/10), 7.04 ~ 7.11
(8N, m. aromatic ring x 2), 15.43 (IH, b
s, -Q(enol)),IR (KBr vI.)
: 1620cm-' (G-Q). Example 1.1.7-bis(3-chlorosulfonyl-4-
methylphenyl)-4-diazo-3,5-hebutanedione (in general formula [II], Y-Y'-CH3, X-
X'=-so. ct, msn. Synthesis of compound 2) (
1) Synthesis of 1.7-bis(4-methylphenyl)-4-diazo-3.5-hebutanedione 1.7-bis(4-methylphenyl)-obtained in Reference Example 2
After dissolving 112.8 g (366 mmol) of 3.5-heptanedione in methylene chloride 73 (7!IC) and adding 31.1 g (366 mmol) of viveridine,
p-toluenesulfonyl azide 75 obtained in Reference Example 1 at ℃
.. 6 g (380 mmol) was added dropwise, and further 2 g (380 mmol) was added at the same temperature.
The reaction was stirred for hours. Is the reaction solution diluted in caustic potash water? After washing with water, it was washed several times with water and dried with anhydrous MgSO4. After removing the drying agent, the solvent was distilled off to obtain 129 g of a brown oil. The residual oil was then recrystallized from ethanol and! ,7
'-Bis(4-methylphenyl)-4-diazo3,5
-103 g of hebutanedione was obtained as pale yellow prism crystals. mp. 45.6-46.8°C. 'HNMRδppm (CDα3): 2.31 (6}
1, S, Ar-CHX 2). 2. 88-3. 0
5 (8H, m, Ar-GJC%GO-X 2).
7. 10 (8N, s. aromatic ring x 2). IR(κBri): 2100cr'(-CN2), 1
660c ``' (C ■ 0). t2) 1,7-bis(3-chlorosulfonyl-4-methylphenyl)-4-diazo 3,5-hebutanedione (general formula [11]i.: Y-Y' tone-(:H3,
Compound of X'X"-SO2C1, tn-n■2 1.7- obtained in 1)
A chloroform solution containing 90 g (269 mmol) of bis(4-methylphenyl)-4-diazo-3.5-heptanedione dissolved therein was added dropwise at 0 to 5° C., and the mixture was stirred and reacted at the same temperature for 1 hour. The reaction solution was poured into 5.5 mL of ice water, extracted with chloroform, and the separated chloroform layer was collected. After washing with water twice, it was dried with anhydrous MgSO4. After removing the desiccant, the solvent was distilled off to obtain an oily residue. The oil was then separated into columns.
[Silica gel: Wakogel C-200 (manufactured by Wako Pure Chemical Industries, Ltd.), eluent: n-hexane/ethyl acetate = 1/1
(v/v) ] t,, 1,7-bis(3-chlorosulfonyl-4-methylphenyl)-4-diazo 3,5-
30 g of hebutanedione were obtained as a pale yellow viscous oil. 'I-INMRδppa+(CDCta): 2.7
4 (6H,s,Ar-CH,x2) ,3.04
~3.08 (8B, m, Ar-C% CHIGO-x2)
, 7.34 (211, d, J■8Hz. pheny
l-C,,x2). 7.49 (2H, dd, J-2H
z and J-8Hz, phenyl-GsX2), 7
.. 90 (28, d, J・2Hz. phenyl-C.
X2). IR (Neat): 2110cm-' (CN2)
, 1650cm-' ((:■0).UV(CH3CN)λa+ax(ε): 233.
1r+n+(27550). Elemental analysis value (C21H20α2N20 [IS2) theoretical value: C%, 47.46: Hne, 3.79; N! !
, 5.27 Actual value: C$, 47.54; H main, 3
.. 99. N! Ii, 5.21, Example 8 2.1.7-bis(3-methoxysulfonyl-4-methylphenyl)-
4-diazo 3,5-hebutanedione (general formula [II]
In , Y=Y'=-CH. t. X・X'・-SO
3CH3. Synthesis of Example 1 (compound m-n72)
2) 1,7-bis(3-chlorosulfonyl-4-
3.1 g (5.8 mmol) of methylphenyl)-4-diazo-3.5-heptanedione was dissolved in 25 methanol and 40 methylene chloride, and 1.7 g of triethylamine was added dropwise thereto at 5 to 10°C. After reacting with stirring at room temperature for 8 hours, the residue was concentrated under reduced pressure and diluted with methylene chloride 36 (lat!). After washing several times with water, anhydrous Mg
Dry with SO4. After removing the desiccant, the solvent was distilled off, and the remaining crude oil (2.9 g) was separated by column [silica gel: Wakogel C-200, eluent: n-hexane/ethyl acetate = 5/
1 → 3/1 -) 2/1 (V/V)] L/, 1.7
1.9 g of -bis(3-methoxysulfonyl-4-methylphenyl)-4-diazo-3,5-hebutanedione was obtained as a pale yellow viscous oil. 'HNMRδppm (CDα3): 2.60 (
6}1, S, Ar-i1l, X 2), 3.01 ~ 3
.. 05 (8M, m, Ar-CIjICii, Go-X2
). 3.74(6H,s,-SO3CHix2),
7.28 (2H, d, J-8Hx, phenyl-
Cs x2), 7.40 (2B, dd, J-8Hz
, and J12}1x, phenyl-C6x 2)
.. 7.82 (2tl,d,J-2Hx.phenyl
-C2X 2). In(Neat): 2120cm-'(1;N,
), 1640cm-' (C-0). UV (CH3(:N) λmax(ε) :225
.. 4nl1l (29060). Elemental analysis value (CzzHzsNzOA5z) Theoretical value: C
%, 52.86. 8'! , 5.01. rl,
5.36 Actual value: C! k, 52.74: H%,
5.24. N! k, 5.26. Example 3.1.7-bis(3-ethoxysulfonyl-4
-methylphenyl)-4-diazo-3,5-hebutanedione (general formula [II], Y-Y'-OH,,
Synthesis of 1.7-bis(3) obtained in (2) of Example 1
-Chlorsulfonyl-4-methylphenyl)-4-diazo 700 mg (1.3 mmol) of 3,5-hebutanedione dissolved in 201 ethanol and 80 methylene chloride was added with triethylamine 365B at 5 to 10°C.
was added dropwise, and the reaction and post-treatment were carried out in the same manner as in Example 2 to obtain crude oil 700B. This is separated by column [
Silica gel: Wakokel C-200, eluent: n-hexane/ethyl acetate = 571 -+3/! (v/v)]
450 mg of L/,197-bis(3-ethoxysulfonyl-4-methylphenyl)-4-diazo-3,5-heptanedione was obtained as a pale yellow viscous oil. 'HNMRδppm (CDCi3): 1.32 (
6H, t, J・7Hx, -SO3CH2CH1x2),
2.61 (6H, s, Ar-ell, x2),
3.01-3,08 (8H, m, 8r-CHCHCO-
X2), 4.10 (4H,q,J-7HZjS
03CtjlCH3X 2). 4.27 (2H,
d, Js8Hz, phenyl-C,, x 2), 7.
39 (2H, dd, J・2Hz and J-8Hz, ph
enyl-Csx 2) 7.82 (2H, d, J・2H
z, phenyl-C2x 2). IR (Neat)
: 2110cm” (CN2), 1645cm
-' (C-0). UV(Cll3CN)λmax(ε): 225. 4
nm (309 10). Elemental analysis value (C2sHsoN20sS2) theoretical value:
C%, 54.53: H%, 5.49. N turtle, 5
.. 09 actual measurement value: C! 6.54.46; H turtle, 5
.. 56; N96, 5.14. Example 4.1.7-bis(3-N,N-diethylaminosulfonyl-4-methylphenyl)-4-diazo3.
5-hebutanedione (in the general formula [03, Y-Y'.
1(:H3,X・X'・-SOzN(hhh. m −
Compound 1 obtained in step (2) of Synthesis Example (2)
7-bis(3-chlorosulfonyl-4-methylphenyl)-4-diazo 3,5-hebutanedione 700mg
(1.3 mmol) was dissolved in acetonitrile 15-
1 g of N,N-diethylamine was added dropwise at 5-10°C. Then, after reacting with stirring at room temperature for 10 hours, it was concentrated under reduced pressure.
The residue was diluted with 40% methylene chloride, washed several times with water, and then anhydrous M
Dry with gSO4. After removing the desiccant, the solvent was distilled off, and 800 mg of the crude oil residue was separated by column separation [silica gel: Wako gel (: -200, eluent: n-hexane/ethyl acetate = 5/l → 2/l (v/v )1-bis, 1.7-bis(3
-N,N-diethylaminosulfonyl-4-methylphenyl)-4-diazo 3,5-heptanedione 380t
Ag was obtained as a slightly yellow viscous oil. IHNMRδI)Pln(CDCt3): 1.12
(1211.t, J・7Hz, N-CH2C!lLlx
4), 2.55(61{,s,Ar-CHx2),
2.96 to 3.08 (8H, n+, -GHCi(:O
-X2), 3.30 (811,Q,J・7HZ,N
~C CIL + X4), 7.20 (2H, d, J・8
Hz, phenyl-(:,X2), 7.28(2H
, d, J・8tlZ, phenyl-C6X2),
7.76 (2H, s, phenyl-C, X2). IR (Neat): 2120c'' (-CN2)
, 1650c ``'{CW=0). UV (C, H3CN) λwax (ε): 227
.. 2r+m (30810). Elemental analysis value (CzqH4oN406S2) theoretical value:
C96, 57.59; H! ! , 6.67: N%.
9.26 Actual value: C*, 57.71. H turtle,
6.42: No! Ii. 9.50. Example 5.1.7-bis(4-methyl-3-sulfophenyl)-4-diazo3.5-hebutanedione (in general formula [II], Y-Y'-GH3, X-X' 1.7-bis(3-chlorosulfonyl-4-methylphenyl)-4-diazo obtained in {2) of Example 1 3.5-hebutanedione 1 .4 g (2.6 mmol) in tetrahydrofuran 401d and water 40FRl;
The reaction was stirred at room temperature for 48 hours. After washing the reaction solution several times with methylene chloride, it was dried under reduced pressure to obtain 1,7-bis(4-methyl-3-sulfophenyl)-4-diazo-3,5-hebutanedione l. 2 g were obtained as a pale yellow viscous oil. I HNMRδpp@(GOα,-DMSO-d.)
: 2.48 (6H, s, bx 2). 2.80
(4H.t, J.7Hz.-CjjlGO-x 2)
.. 3.04 (4H, t, J・7Hz.8r-Ch-
X 2) , 4.98 (2H, bs, -SOs!jx
2), 7.02-7.14 (4H, m, phenyl
-CsJ:6X2), 7.60(2tl,s,phe
nyl-G2x 2). IR (Neat): 2110cm-I (-CN2)
, 1630 cm-' (G-0). Elemental analysis value (C2+Ht2N20aSz) theoretical value: (
J, 51.00. H$, 4.48. N! 4, 5
.. 66 Actual value: C! k, 50.82; H%, 4
.. 73. N! k, 5.93, Example 6.1.7-
Bis(4-methyl-3-sulfonatophenyl)-4-diazo 3,5-hebutanedione diammonium salt (general formula
【■1に於て、Y−Y’・一〇H3,X=X’・−
SO3N H4, a −n−2の化合物)の合成実施
例5で得た1.7−ビス(4−メチル−3−スルホフェ
ニル)−4−ジアゾー3.5−ヘブタンジオン1.Og
(2ミリモル)をアセトニトリル27−に溶解し、これ
にO〜5℃で28%アンモニア水溶液0.55gを滴下
し、同温度で3時間撹拌した。反応液を減圧濃縮し残液
をアセトニトリルで数回洗浄後減圧乾固し、1.7−ビ
ス(4−メチル−3−スルホナトフエニル)−4−ジア
ゾー3.5−へブタンジオン ジアンモニウム塩950
IIlgを淡黄色粘稠油状物として得た。
1 11NMRδI)pm(CDCl3−DMSO−d
a) :2.60 (6H,s,C!hX?) , 2
.83(4H,tj・7Hz,−ftjzCO− X
2 ) ,3.06(4Lt,J■7Hz, Ar−C
!lLl−x2),4.74(88,bs. NLL4
’l.07(4N.s,phenyl−C6,C6X
2),7.06 (2N,s.phenyl−C2x
2)。
(R(Neat) : 33QOcm” (NH4)
, 2090cm−’ (−CN.) ,1620cr
’ (C・0) 。
元素分析値(C2+H2aNaOaSz)理論値: (
J,47.72 . 8亀,5.34 : N !Ii
,IO.Iio実測値: CX,47.50 . H亀
,5.51 ; N *,10.91,参考例3.1.
2−ジー(l−ナフチル)−3.5−へブタンジオンの
合成
シクロヘキサン320ml中に60%水素化ナトリウム
27gを仕込み、これに20〜25℃で2.4−ベンタ
ンジオン59.6g (0.595モル)を溶解したシ
クロヘキサン溶液を滴下し、同温度で40分間撹拌反応
させた。次いでN,N,N’,N’−テトラメチルエチ
レンジアミン148gを注入後、−5〜O℃でn−ブチ
ルリチウムのn−ヘキサン溶液542gを滴下し更に室
温まで昇温し24時間反応させた。次いでこの反応液に
0〜5℃て゛1−クロルメチルナフタレン245gを?
下し、以下、参考例2と同様にして反応及び後処理を行
い、黄色油状物200gを得た。これをカラム分Il!
[シリカゲル:ワコーゲルC−200,溶離液:n−ヘ
キサン/ベンゼン= 1/4 (v/v) ] シ、1
.7−ジー(l−ナフチル)−3.5−ヘプタンジオン
71gを黄色油状物として得た。
’HNMRδppm(CDCI3) : 2.56 (
4H,t,J・8Hz, −Cl{■CjlCO−X
2) . 3.24(4N,t,J−8HZ,−(4C
}l2(:0−X 2) ,3.33(2H.s,−(
:0(Jx(:0−:ケト型1/7), 5.27 (
I}l, s,−C−CH−GO− :c.ノール型6
/7), 7.17 〜7.19 (f4H,m,車
芳香環x2), 15.43 (1}1,bs.−OH
(enol))。
IR(Neat) : 1720cm−’, 1600
ca+−’実施例7.1.7−ビス(4−クロルスルホ
ニル−1−ナフチル)−4−ジアゾー3.5−へプタン
ジオン(一般式 [IV] に於て、l −’l”−H
, X−X’−50■0. m−n*2の化合物〉の合
成
{l}4−ジアゾー1.7−ジー(1−ナフチル)−3
.5−ヘプタンジオンの合成
毒考例3で得た1.7−ジー(l−ナフチル) −3.
5−ヘプタンジオン30g (791ミリモル)を塩化
メチレン】60−に溶解し、ビベリジン6.7mg(7
9ミリモル)を加えた後、0〜5℃で参考例1で得たP
−トルエンスル本二ルアジド16.3g (83ミリモ
ル)を滴下した。以下実施例1の(1)と同様にして反
応及び後処理を行い、橙色油状物35gを得た。これを
カラム分離[シリカゲル:ワコーゲルC−200,溶離
液:n−ヘキサン/塩化メチレン=4/l→2/I (
v/v) ] L/、4−ジアゾー1.7−ジー(I−
ナフチル)−3.5−ヘプタンジオン22.7gを淡黄
色粘稠油状物として得た。
’ HNMRδGll)II((:D(13) : 3
.14 (4H,t,J・8Hx, −C}12C#L
(:0−X2). 3.42(4H,仁,J−8Hz
,−C%CH.GO−x 2冫,7.34〜8.03
(14H, m,芳香環×2)。
IR(Neat) : 2120CI+−’ (CN2
) . 1650cm−’ ((:・0)。
(21 1 . 7−ビス(4−クロルスルホニル−1
−ナフチル)−4−ジアゾー3.5−へプタンジオン(
一般式[IV]ニ於て、z−Z’−H, X−X’・−
So2C!. m =n −2の化合物)の合成
クロルスルホン酸25.Og中に(1)で得た4−ジア
ゾー1.7−ジー(1−ナフチル)−3.5−へブタン
ジオンI1.0g (27ミリモル〉を溶解したクロロ
ホルム溶液をO〜5℃で滴下し、以下、実施例1の(2
)と同様にして反応及び後処理を行い、粗褐色油状物1
5gを得た。これをカラム分rI1[シリカゲル:ワコ
ーゲルC−200 ,溶離液:n−ヘキサン/塩化メチ
レン−1,/i−+ 1/4→1/9(v/v)] L
/、1.7−ビス(4−クロルスルホニル−1−ナフチ
ル)−4−ジアゾー3.5−へブタンジオン2.6gを
微黄色粘稠油状物として得た。
l HNMRδppm (CDα3) : :l.22
(4H,t,−CI12C!l!.(:0−X2),
:1.55(4H,t, −tJ,CH2CO− X
2), 7.52(2H,d,J4Hz, napht
hyl−C2X2), 7.71〜7.88 (4N,
m,naphthyl−C, ,c, X 2) ,
8.20 (2H, d , J=8Hz , na
phthyl−C8x2), 8.29 (2M, d
, J・8Hz,naphthyl−C3X2),8.
85(28,d,J・8Hx,naphthyl−C5
X2)。
IR(Neat) : 2100cm−’ ((JJ2
) . 1645cm−’ (11:・O)。
11V(C}I3ON) λwax (ε): 23
9.4ni(65090)。
元素分析値(C27H2。α2N206S2)理論値:
C%,53.74 . }I!k,3.34. N亀
, 4.64実測値: C%,53.59 . H%
.3.51 . N!Ii, 4.52,実施例8.1
.7−ビス(4−メトキシスルホニル−1−ナフチル)
−4−ジアゾー3.5−へブタンジオン(一般式[IV
]ニ於て、l −’LM{, xmx’婁−so3c}
l,, msnm2の化合物)の合成
実施例7の(2)で得た1.7−ビス(4−クロルスル
ホニル−1−ナフチル)−4−ジアゾー3.5−ヘプタ
ンジオン4.Og (6.6ミリモル)をメタノール3
0ml?及び塩化メチレン50−に溶解した溶液に、5
〜lO℃でトリエチルアミン1980一gを滴下し、以
下、実施例2と同様にして反応及び後処理を行い、粗油
状物3.7gを得た。これをカラム分離[シリカゲル:
ワコーゲルC−200,溶離液:n−ヘキサン/酢酸エ
チル−5/l−+ 2/1 (v/v)] L,、1.
7−ビス(4一メトキシスル本二ルー1−ナフチル)−
4−ジアゾー3.5−へプタンジオン1.9gを白色非
品性物として得た。
’HNMRδppm (CDα3) : 3.20 (
4H,t,−11:ICO−X2), 3.51(4H
,t. Ar−CHL−x2), 3.72(611,
S,So,OH.x2), 7.49(2N,d,J・
8Hz, naphthyl−C,x2). 7.64
〜7.74(4H,m,naphthyl−(:e,h
x 2) , 8.15 (2N,dd,J−8HZ及
びJ−2Hz, naphthyl−CaX2), 8
.21(2H,d,J・8Hx.naphthyl−1
:, x2), 8.65(2H,dd,J・8Hz及
びJ−2Hz, naphthyl−Csx 2).I
R(κBr5):2120cm−’(−CN2), 1
640cr!1−’(C−0),U■((?}f3CN
)λmax (ε) : 228.8r+n+(10
1940),参考例4.1.7−ジー(2−ナフチル)
−3.5−ヘブタンシオンの合成
(l)2−ナフトエ酸エチルの合成
2−ナフトエ酸f21g (0.7モル)をクロロホル
ムl.5J2及びN,N−ジェチルホルムアミド IO
OTnl中に加え、還流下、塩化チオニル167gを滴
下した後、更に1時間撹拌還流下に反応させた。反応液
をts縮後、残渣を10”C以下でトリエチルアミン1
06 g及びエタノール150−の溶液中に滴下した。
室温で更に1時間撹拌反応させた後、水1℃を注入し、
クロロホルム抽出して有機層を分取した。有機層を水洗
後無水Mgso4で乾燥した。乾燥剤を枦別し、溶媒留
去し残渣を減圧蒸留してbp.145〜147℃/2m
mH)<留分の2−ナフトエ酸エチルII2gを無色油
状物として得た。本品は放冷後、結晶化した。mp.
35.0〜36.5℃。
(2)2−ナフタレンメタノールの合成窒素気流下、エ
チルエーテル500一中に水素化リチウムアルミニウム
19gを加えて懸濁し、これに(11で得た2−ナフト
エ酸エチルlllg (0.55モル)を溶解したエチ
ルエーテル溶液を10℃以下で滴下し、更に室温で1時
間撹拌反応させた。反応後酢酸エチル200−を滴下し
て還元剤を失活させ、次いで反応液を濃塩酸20〇一及
び水300一中に注入した。静置、分取して得た有機層
を水洗、乾燥〈無水MgSO4)後、溶媒留去し残渣の
褐色結晶をリグロインより再結晶して2−ナフタレンメ
タノール74.0gを白色結晶として得た。mp. 8
0.5〜81.5℃。
(3)2−クロルメチルナフタレンの合成(2)で得た
2−ナフタレンメタノール53.7g(0.34モル)
を塩化メチレン300−に溶解し、30±5℃で塩化チ
オニル60.7gを滴下し、次いで撹拌還流下に1時間
反応させた。冷却後、反応液を水洗2回行い、無水Mg
S04で乾燥後濃縮し、残渣の油状物54gを減圧蒸留
してbp. !29〜133℃/2 rnrnHg留分
の2−クロルメチルナフタレン44.2gを淡黄色油状
物として得た。本品は放冷後、結晶化した。mp. 4
6.8〜48.0℃。
(4)1,7−ジー(2−ナフチル)−3.5−ヘブタ
ンジオンの合成
シクロヘキサン55一中に60%水素化ナトリウム46
gを仕込み、これに20〜25℃で2.4−へブタンジ
オン10.Og (0.1モル)を溶解したシクロヘキ
サン溶液を滴下し、同温度で40分間撹拌反応させた。
次いでN,N,N’,N’−テトラメチルエチレンジア
ミン24.8gを注入後、−5〜0℃でn−ブチルリチ
ウムのn−ヘキサン溶液91gを滴下し更に室温まで昇
温し24時間反応させた。次いでこの反応液に0〜5℃
で(3)で得た2−クロルメチルナフタレン35.3g
を滴下し、以下、参考例2と同様にして反応及び後処理
を行い、黄色油状物32gを得た。
これをカラム分ra[シリカゲノレニワコーゲノレC−
200 ,溶離液:ベンゼン]し、1.7−ジー(2−
ナフチル)−3.5−ヘブタンジオン15.4gを淡黄
色?晶として得た。!Op.123.0〜125.0℃
。
’ HNMRδpDffl(CDCt3) : 2.6
5 (4H,t,J−8112, −CjJCO−
X 2), 3.08(4H.t,J−8HZ,−CH
CII2C:O−X 2),3.53(2H,s,−C
OC!l!.GO−:ケト型3/5), 5.45 (
LH, s,−c=ch−co−:zノール型2/5)
, 7.29(2N,d,J−6.511z,1 −
naphthyl−(. x 2) , 7.31 〜
7.40(4}1,m,naphthyl−C,,Ct
x2),7.50(21,bs,naphthyl−
C, x2), 7.73〜’/.8L(6H,rx
,naphthy1−C3, C.. Ca X
2),15.46(IH,bs, OH(enol))
..It{(KBrff) : 1600cm−
’((:−0) 。
実施例9.1.7−ビス(6一及び8−クロルスルホニ
ル−2−ナフチル)−4−ジアゾー3.5−ヘブタンジ
オン(一般式[IV]I.:於て、l−1”−H,X−
X”−So■Cl.,m−n−2の化合物)の合成
(l)4−ジアゾー1,7−ジー(2−ナフチル)−3
.5−ヘブタンジオンの合成
参考例4の(4)で得た1.7−ジー(2−ナフチル〉
−3,5−へブタンジオン6.85g (18ミリモル
)を塩化メチレン36mgに溶解し、ビベリジン153
0mg ( 18ミリモル)を加えた後、0〜5℃で参
考例1で得?p−トルエンスルホンアジド3.72g
(19ミリモル)を滴下した。以下実施例1の(11と
同様にして反応及び後処理を行い、赤色粘稠油状物9.
8gを得た。これをカラム分離[シリカゲル:ワコーゲ
ルG−200,溶離液:n−ヘキサン/塩化メチレン=
1 / 1 (V/V)IL/、4−ジアゾー1.7−
ジー(2−ナフチル)−3.5−ヘプタンジオン6。8
gを黄色粘稠油状物として得た。
’ HNMRδppm((41CfLs) : 3.1
2 (8H,bs,−(:JIJj,CO−x2),
7.33(2}1,d,J・8Hz, naphthy
l−(;4X2), 7.41〜7.62(4H,m,
naphthyl−C5.C7X2). 7.64 (
2H,bs,naphLhyl−C+ X2), 7.
75 〜7.81 (6H,IIl,naphthyl
C,.C6,C6X 2)。
IR(Neat) : 2100co+−’(−(:N
2), 1650cm−’(C■0),12) 1,
7−ビス(6一及び8−クロルスルホニルー2−ナフチ
ル)−4−ジアゾー3.5−ヘブタンジオン(一般式[
IV]!.:於で、l−1”−H,X−X’−SO2C
l.m−n−2の化合物)の合成
クロルスルホン酸14.7g中に{1}で得た4−ジア
ゾー1.7−ジー(2−ナフチル) −3.5−ヘブタ
ンジオン6.4g (15.7ミリモル)を溶解したク
ロロホルム溶液を0〜5℃で滴下し、以F、実施例1の
(2)と同様にして反応及び後処理を行い、黄色油状物
1.1 gを得た。これをカラム分M[シリカゲル:ワ
コーゲルC−200,溶離液:n−ヘキサン/塩化メチ
レン= 1 / 2 (v/v) It,、1.7−ビ
ス(6一及び8一クロルスルホニル−2−ナフチル)−
4−ジアゾー3.5−へブタンジオン(l:1混合物)
250Bを微黄色粘稠油状物として得た。
’ HNMRδppln((:D(f3) : 3.1
9 〜3.31 (8H.m, −C!LICjX−X
2), 7.52〜8.36(8H,lI1,芳香環x
2), 8.54(2H,bs,naphthyl−C
,X 2:6−SOzGl異性体]/2) ,8.71
(2H,d,J・911z,naphthyl−C7x
2:8−SO2Cl異性体1/2) ,,
JR(Neat) : 2110cm−’(−CNz)
. 1650c『’(C・O)。
元素分析値(C27H2。02N206S2)理論値:
C$,53.73 ; }1%,3.34: N!k
, 4.64実測値:C零,53.49 . H!k,
3.45. N亀, 4.81,?考例5.1.7−ビ
ス(4−クロルフエニル)−3.5−ヘブタンジオンの
合成
シクロヘキサン 110m7!中に60%水素化ナトリ
ウム9.2gを仕込み、これに20〜25℃で2,4−
ベンタンジオン20.0g (0.2モル)を溶解した
シクロヘキサン溶液を滴下し、同温度で40分間撹拌反
応させた。次いでN,N,N’,N’−テトラメチルエ
チレンジアミン49.6gを注入後、−5〜0℃でn−
ブチルリチウムのn−ヘキサン溶液182gを滴下し更
に室温まで昇温し24時間反応させた。次いでこの反応
液にO〜5℃で塩化4−クロルベンジル74.7gを滴
下し、以下、参考例2と同様にして反応反び後処理を行
い、赤橙色半融状晶69gを得た。これをメタノールよ
り再結晶し、1.7−ビス(4−クロルフェニル)’
− 3.5−へブタンジオン24.7gを白色プリズム
晶として得た。訃・. 74.6〜76.lt:。
’ HNMRδI)pIn((:D(13) : 2.
55 (411,t,J■7.3Hz,Ar−CH2(
:Ll(:0− X2), 2.88(4H,t,J−
7.3}12,Ar−CH,− X2). 3.51(
211,s,−COCizCO−:ケト型3/20)
,5.37(1}1,s,−C−C}j−CO−:エノ
ール型17/20), 7.07〜7.11(411,
■
?,phenyl一C2,C6x2), 7.23x7
.26(4H,m, phenyl−C3,CF, X
2) , 15.35 (IH,s,−Off(e
nol)) 。
rR(KBr錠) :3300cm−’ , 1640
cm−’ ((:■0) , 1600C!I+−’実
施例10. 1.7−ビス(4−クロルー3−クロルス
ルホニルフェニル)−4−ジアゾー3,5−へプタンジ
オン(一般式[■1に於て、Y−Y’−(!, X−X
’−So2(;I,m =n−2の化合物)の合成
(11 1.7−ビス(4−クロルフェニル)−4−ジ
アゾー3.5−へブタンジオンの合成
参考例5で得た1.7−ビス(4−クロルフェニル)−
3.5−へブタンジオン12.Og (34.4ミリモ
ル)を塩化メチレン70−に溶解し、ビペリジン2.9
g+34.4ミリモル)を加えた後、0〜5℃で参考例
1で得たp一トルエンスルホンアジド7.1g (36
ミリモル)を滴下した。以下実施例1の(1)と同様に
して反応及び後処理を行い、油状物15gを得た。これ
をカラム分11[シリカゲル:ワコーゲルC−200,
溶離液:塩化メチレン1し、1.7−ビス(4−クロル
フェニル)−4−ジアゾー3.5−へブタンジオンl1
.2gを淡黄色結晶として得た。
?p. 8:3℃(分解)。
’HNMRδI)l)ffi((:DCt3) : 2
.93 〜3.01(8N,m,Ar−%CHIGo−
x2). 7.12 〜7.16(4H.m,phen
yl−C2,C6x2), 7.24 〜7.27(4
H,m,phenyl−C3,G5x2)。
IR(κBri7):2100cm−’(−CN2),
1650cm−’(C・0),UV((Jl3CN)
λwrax (ε): 225.Onm (315
50)。
+21 1.7−ビス(4−クロルー3−クロルスル
ホニルフェニル)−4−ジアゾー3.5−へブタンジオ
ン(一般式[■1に於て、Y−Y’−Cl .X−X’
−SO■Cl ,―・n=2の化合物)の合成
クロルスルホン酸9.9g中に(1)で得た1.7−ビ
スー(4−クロルフェニル〉−4−ジアゾー3.5−へ
プタンジオン3.98g (10.6ミリモル)を溶解
したクロロホルム溶液を0〜5℃で滴下し、以下、実施
例1の(2)と同様にして反応及び後処理を行い、粗油
状物1.3gを得た。これをカラム分l!1[シリカゲ
ル:ワコーゲルC−200,溶離液:塩化メチレン]し
、1.7−ビス(4−クロルー3−クロルスルホニルフ
ェニル)−4−ジアゾー3.5−へブタンジオンl.1
gを淡黄色粘稠油状物として得た。
’ HNMR δppm(CDcL) : 3.08
(8tl,s,−C%−x本),7.55(4H,s,
phenyl−CB,(:6X2), 7.99(2H
,s,phenyl−G2X2)。
JR(Neat) : 2110CI!1−’(−(;
N2), 1655cr’(CJ).UV (CH3
ON) λ旧×(ε) :227.Onm(3414
0) .287.0nm(5640)。
元素分析値(C+sH+4CI.4NzOsS2)理論
値: (J,39.88 . HX,2.47 : N
!k, 4.90実測値: C!Ii,40.09 ;
H亀.2.31 ; N%;, 4.82,参考例6
.1.7−ビス(4−メトキシフエニル)−3.5−ヘ
ブタンジオンの合成
シクロヘキサン200一中に60%水素化ナトリウム1
7gを仕込み、これに20〜25℃で2.4−ベンタン
ジオン37.3g (0.37モル)を溶解したシクロ
ヘキサン溶液を滴下し、同温度で40分間撹拌反応させ
た。次いでN,N,N’,N’−テトラメチルエチレン
ジアミン91.8gを注入後、−5〜O℃でn−ブチル
リチウムのn−ヘキサン溶液337gを滴下し更に室温
まで昇温し24時間反応させた。次いでこの反応液に0
〜5℃で塩化4−メトキシベンジル133g?滴゛下し
、以下、参考例2と同様にして反応及び後処理を行い、
粗結晶を得た。これをエタノールより再結晶して、1.
7−ビス(4−メトキシフェニル)−:l,5−へプタ
ンジオン95.1gを淡黄色短針状晶として得た。mp
. 73.5〜7642℃。
’ HNMRδPPffi(CDl:13) : 2.
54(4N,t,J・8Hz,Ar−CH2c6co−
x2), 2.86(4Lt,J・811z,^r−(
:jj,−x 2) ,3.78(8H,s,−(;i
j,10−X 2) , 5.41(IH,s,−C−
(Jj−GO−:1
エノール型10/10), 6.82(4}!,d,J
・9Hz,phenyl−1.,c,x2), 7.0
9(4H,d,Js9}IZ. phenyl−C3,
C,, X2),15.43<IH,bs,−OH)。
IR(KBrvE) : 1600cm−’ (C:−
C)。
実施例11 1.7−ビス(3−クロルスルホニル−4
一メトキシフェニル)−4−ジアゾー3.5−へブタン
ジオン(一般式[II]ニ於て、’l’−Y’−0(;
}I3,X−X’−−SO■α,m=n=2の化合物)
の合成fl3 1,7−ビス(4−メトキシフェニル
)−4−ジアゾー3.5−へプタンジオンの合威参考例
6で得た1.7−ビス(4−メトキシフェニル) −3
.5−へブタンジオン4.5g(13.2ミリモル)を
塩化メチレン26−に溶解し、ビベリジン1..lmg
(13.2ミリモル)を加えた後、0〜5℃で参考例
1で得たP−トルエンスルホンアジド2,73g(13
.9ミリモル〉を滴下した。以下実施例1の(1)と同
様にして反応及び後処理を行い、暗褐色油状物5.6g
を得た。これをカラム分離[シリカゲル:ワコーゲルG
−200,溶離液:塩化メチレン1し、1,7−ビス(
4−メトキシフエニル)一4−ジアゾー3.5−へブタ
ンジオン2.4gを黄色粘稠油状物として得た。
’HNMRδppm((DCt3) : 2.87〜3
.03 (8ft,m,−1:H,−x4), 3.7
8 (6H,s,(:JO−x2), 6.82 (4
8,d,J・8.6Hz,phenyl−C,,C.X
2), 7.13(4H,d,J・8.6Hz,phe
nyl−G2,G6X 2)。
JR(Neat):2900cm”, 2100cm−
’(−CN2),1650cm−’(C・0).
(2) 1.7−ビス(3−クロルスルホニル−4−
メトキシフエニル)−4−ジアゾー3.5−へブタンジ
オン(一般式[II]ニ於て、Y−Y’−0(:H3,
X−X’−−SO2Ci。m−n・2の化合物)の合
成クaルスル*ンllIe5.6g中k:(1)114
タf.7−ヒス−(4−メトキシフェニル)−4−ジア
ゾー3.5一へブタンジオン2.2g (6ミリモル)
を溶解したクロロホルム溶液をO〜5℃で滴下し、以下
、実施例1の(2)と同様にして反応及び後処理を行い
、粗生成物1.8gを得た。これをカラム分離[シリカ
ゲル:ワコーゲルC−200,溶離液:n−ヘキサン/
酢酸エチル= 1/1(v/v)] シ、1.7−ビス
(3−クロルスルホニル−4−メトキシフエニル)−4
−ジアゾー3,5−へブタンジオン1.7gを淡黄色粉
末晶として得た。mp. 51.0〜52.0℃。
’tlNMR l3ppm(CDα3) : 2.99
〜3.05 (8tl,m,−(:%−X 4) ,4
.03 (6tl,s,(Jl,0−X 2) , 7
.06 (28,d,J・8.8Hz,phenyl<
,X2), 7.57(2H,dd,J・8.8Hz,
及びJ−2.2Hz,phenyl一〇. x2),
7.79 (2H.d.J−2.2flz,pheny
l−(:2x 2)。
IR(KBr錠):2100eam−’(−CN2)。
1650cr’ (C・0)。
!JV(CH,CN) λwax(ε) +228.O
n!!+(35000) ,306.0nrB(755
0).
元素分析値 (C21H2。Cft2N20sS2)理
論値: C96.44.77 ; H96,3.58
. Nk, 4.97実測値: (J,44.80 ;
H51;,3.51 ; N%, 5.07,応用例
1,
実施例1で得た1.7−ビス(3−クロルスルホニル−
4−メチルフエニル)−4−ジアゾー3.5−へブタン
ジオン I.5gとパラクレゾール・ノボラック樹脂(
分子量1万)8.5gとをジエチレングリコールジメチ
ルエーテル20gに撹拌溶解させて感光材料Aを得た。
第1図を用いて本発明に係る感光材料を用いたパターン
形成方法を説明する。半導体等の基板1上に七で得た感
光材料Aを回転塗布し、90℃で2分間ホットプレート
にてプレベータ後、1.2−の膜厚の感光材料膜2を得
た。(第1図(a))。尚、基板1上には絶縁膜、導電
膜等が形成されていることが多い。次に248.4nm
のエキシマレーザ4をマスク5を介して選択的に露光し
た。(第1図(b))。そして、最後にNMD−3 (
東京応化工業社製)で60秒間現像することにより感光
材料膜2の露光部を溶解除去し樹脂パターン2aを得た
。
(第1図(C))。樹脂パターン2aはアスベクト比が
90度の好形状で、膜減り数%以下のサブミクロンパタ
ーンであった。このパターン2aをエッチングマスクと
して基板1表面をエッチングした。
この膜2のレジスト材料としての紫外分光を第2図に示
す。尚、第2図に於いて、実線(一)は露光前の、破線
(−−−)は露光後の結果を夫々示す。この結果から明
らかな如く、248.4nmにおける露光前後の透過率
変化は約74%という大きい値であり、この感光材料及
び本発明の感光性化合物がKrFエキシマレーザに対し
て好反応性を示したことがわかる。
応用例 2.
実施例1で得た1.7−ビス(3−クロルスルホニル−
4−メチルフェニル)−4−ジアゾー3.5−へブタン
ジオン I.5gとメタクレゾール・ノボラック樹脂(
分子量2万) 8.5gとをエチルセロソルブアセテ
ート20gに撹拌溶解させて感光材料を得た。
これを用いて、応用例1と同様にしてバタニン形成皮び
紫外分光の測定を行ったところ、応用例1とほぼ同等の
良好な結果が得られた。
応用例 3.
実施例7で得た1.7−ビス(4−クロルスルホニル=
1−ナフチル)−4−ジアゾー3.5−へブタンジオン
1.5gとパラクレゾール・ノボラツク樹脂(分子量
1万)8.5gとをジエチレングリコールジメチルエー
デル20gに撹拌溶解させて感光材料を得た。
これを用いて、応用例lと同様にしてパターン形成及び
紫外分光の測定を行ったところ、応用例1とほぼ同等の
良好な結果が得られた。
応用例 4.
実施例IOで得た1.7−ビス(4−クロルー3−クロ
ルスルホニルフエニル)−4−ジアゾー3.5−へプタ
ンジオン1.5gとメタクレゾール・ノボラツク樹脂(
分子量2万)8.5gとをエチルセロソルブアセテート
20gに撹拌溶解させて感光材料を得た。
これを用いて、応用例1と同様にしてパターン形成及び
紫外分光の測定を行ったところ、応用例1とほぼ同等の
良好な結果が得られた。
尚、感光材料中の樹脂は感光材料の光表面吸収を低減す
るために、248.4nmなどの遠紫外光に対して透明
性の高いものが必要とされる。応用例1〜4で用いられ
た以外の樹脂として、スチレン樹脂、マレイミド系樹脂
、ヒドロキシスチレン樹脂、オルトクロロメタクレゾー
ル・ノボラック樹脂などを用いても同様に好結果が得ら
れるが、もちろんこれらに限定されるわけではない。
また溶媒に関しては、樹脂及び感光体が溶解可能なもの
であれば何でもよく、本実施例では、エチルセロソルブ
アセテート、ジエチレングリコールジメチルエーテルを
用いたが、これらに限定されるものではない。
応用例 5〜l6
各実施例で得た本発明化合物を夫々感光剤とし、樹脂と
してポリ(パラビニルフェノール)樹脂(分子17,0
00)、溶媒としてジエチレングリコールジメチルエー
テルを用いて感光材料を得た。
これらの感光材料を、半導体基板上に回転塗布し、プレ
ベークして、 1.0−の膜厚の感光材料j摸を作製し
、アルカリ現像液[2.38%テトラメチルアンモニウ
ムハイドロオキサイド(TMAR)水溶液]に対する溶
解速度を測定した。
また、上記の感光材料を用いた、応用例1と同様の方法
によりパターン形成を行った。
結果を表1に示す。
Jズ下余白
表1の結果から明らかな如く、各感光材料により良好な
パターンが得られた。また、各感光材料により作製した
膜の溶解速度は何れも150nm/min以下で、ポリ
(バラビニルフェノール)樹脂(分子量7,000)の
みを用いて同様に作製した膜の溶解速度( 4 , O
OOr+m/min)に比較して非常に良好な値が得ら
れた。
この結果から明らかな如く、本発明に係る化合物には、
感光材料のアルカリ現像液に対する溶解速度を低下させ
る働きがあることが判る。
尚、応用例5〜16に於て、ボソ(バラビニルフェノー
ル〉樹脂の代りにスチレン樹脂、ピドロキシスチレン樹
脂、バラクレゾール・ノボラック樹脂、メタクレゾール
・ノボラック樹脂、オルトクロロメタクレゾール・ノボ
ラック樹脂等を用い一1(/
てもほぼ同様の結果が得られる。
応用例 17
以下の組成から成るパターン形成用コントラス1・エン
ハンスト材料を調製した。
1.7−ビス(3−クロルスルホニル−4−メチルフエ
ニル)−4−ジアゾー3.5−へブタンジオン 4.
OgバラクIノゾール・ノボラック樹脂
(分子量5,000) 2.5
gエチルセロソルブアセテート20.0gこのように調
製されたパターン形成コントラストエンハンスト材料は
これを膜としてパターン形成有機膜としたとき、厚さ0
.12μ■で248.4nmのκrFエキシマ・レーザ
での露光前{妻で248.4nmにおける透過率の差が
70%以上と非常に犬き〈なり、入射光のコントラスト
を向上させる働きをすることがわかった。
この本発明に係るパターン形成コントラストエンハンス
ト材料を用いてレジス1・パターン形成を行ったりソグ
ラフィ工程を第3図に示す。
半導体等の基板1上にボジレジスト3 (MP2400
:シブレイ社)を1。5μ厚に回転塗布する(第3図(
a))。次にボジレジスト3上に水溶性有機膜6、例え
ばプルランとポリビニルビロリドンの混合溶液を塗布形
成する。このときブルランとボリビニルビロリドンの混
合重量比は4:1であり、このときの膜厚はパターン形
成に影響のないように0.1〜0.3 pJ程度とした
。なおこの中間層である水溶性有機膜は下層レジストと
上層パターン形成有機膜が混合しないように設けている
もので必ずしも必要ではない〈第3図(b))。次に、
本発明のパターン形成コントラストエンハンスト材料の
層7を厚さ約0.12−で回転塗布形成した。なお、こ
こで下層レジストと中間層水溶性有機膜,水溶性有機膜
と一ヒ層パターン形成有機膜は全く密着性良く積層でき
た。そして、縮小投影露光法(5:1縮小、N八= O
J6)によりマスク5を介して選択的に248.4nm
KrFエキシマ・レーザー4を露光する(第3図(C
))。そして通常のアルカリ現像液によってコントラス
トエンハンストの層である本発明のパターン形成コント
ラストエンハンスト7および中間層である水溶性有機膜
6を同時に除去すると同時に下層レジスト3を現像して
レジストパターン3bを形成したく第3図(d))。こ
のときレジストパターン3bはコントラストの向上した
(アスベクト比90度)0.3μカのラインアンドスペ
ースを解像できた。
尚、尺・屑視17に於て 1,7−ビス(3−クロルカ
しオ・ニルー4−メナルフエニル)−4−ジアゾー3.
5−へブタンジオンの代りに実施例2〜1lで得られた
本発明化合物を感光剤として用いても、ほぼ同様の結果
が得られる。
〔発明の効果)
本発明は、例えば248.4nmのエキシマレーザなど
に対して優れた反応性を有する新規な感光性化合物を提
供するものであり、本発明に係る感光性化合物を用いた
感光材料を、例えばκrFエキシマレーザ(248.4
nm)などの遠紫外線(Deep UV)露光用レジス
トやコントラストエンハンスト材料等に応用した場合に
はサブミクロンオーダの形状の良い微細パターンが容易
に得られるので、半導体産業等に於ける超微量パターン
の形成にとって価値大なるものである。[■ In 1, Y-Y'・10H3, X=X'・-
1.7-bis(4-methyl-3-sulfophenyl)-4-diazo 3.5-hebutanedione obtained in Example 5. Og
(2 mmol) was dissolved in acetonitrile 27-, and 0.55 g of a 28% ammonia aqueous solution was added dropwise thereto at 0 to 5°C, followed by stirring at the same temperature for 3 hours. The reaction solution was concentrated under reduced pressure, and the residual liquid was washed with acetonitrile several times and dried under reduced pressure to give 1,7-bis(4-methyl-3-sulfonatophenyl)-4-diazo3.5-hebutanedione diammonium salt 950
IIlg was obtained as a pale yellow viscous oil. 1 11NMRδI)pm(CDCl3-DMSO-d
a) :2.60 (6H,s,C!hX?), 2
.. 83 (4H, tj・7Hz, -ftjzCO-
2), 3.06 (4Lt, J■7Hz, Ar-C
! lLl-x2), 4.74 (88, bs. NLL4
'l. 07 (4N.s, phenyl-C6, C6X
2), 7.06 (2N, s.phenyl-C2x
2). (R(Neat): 33QOcm” (NH4)
, 2090cm-' (-CN.) , 1620cr
'(C・0). Elemental analysis value (C2+H2aNaOaSz) theoretical value: (
J, 47.72. 8 turtles, 5.34: N! Ii
,IO. Iio actual value: CX, 47.50. H turtle, 5.51; N *, 10.91, Reference example 3.1.
Synthesis of 2-di(l-naphthyl)-3.5-hebutanedione 27g of 60% sodium hydride was charged in 320ml of cyclohexane, and 59.6g (0.595g) of 2.4-bentanedione was added at 20-25°C. A cyclohexane solution in which mol) was dissolved was added dropwise, and the mixture was stirred and reacted at the same temperature for 40 minutes. Next, after injecting 148 g of N,N,N',N'-tetramethylethylenediamine, 542 g of an n-hexane solution of n-butyllithium was added dropwise at -5 to 0°C, and the mixture was further heated to room temperature and reacted for 24 hours. Next, 245 g of 1-chloromethylnaphthalene was added to this reaction solution at 0 to 5°C.
The reaction and post-treatment were carried out in the same manner as in Reference Example 2 to obtain 200 g of a yellow oil. Add this to the column!
[Silica gel: Wakogel C-200, eluent: n-hexane/benzene = 1/4 (v/v)] Shi, 1
.. 71 g of 7-di(l-naphthyl)-3,5-heptanedione was obtained as a yellow oil. 'HNMRδppm (CDCI3): 2.56 (
4H,t,J・8Hz, -Cl{■CjlCO-X
2). 3.24(4N,t,J-8HZ,-(4C
}l2(:0-X 2) ,3.33(2H.s,-(
:0(Jx(:0-:Keto type 1/7), 5.27 (
I}l, s, -C-CH-GO-: c. Knoll type 6
/7), 7.17 ~7.19 (f4H, m, car aromatic ring x2), 15.43 (1}1, bs.-OH
(enol)). IR (Neat): 1720cm-', 1600
ca+-' Example 7.1.7-bis(4-chlorosulfonyl-1-naphthyl)-4-diazo3.5-heptanedione (in the general formula [IV], l -'l''-H
, X-X'-50■0. Synthesis of m−n*2 compound〉{l}4-diazo1,7-di(1-naphthyl)-3
.. Synthetic poison of 5-heptanedione 1.7-di(l-naphthyl) obtained in Example 3 -3.
30 g (791 mmol) of 5-heptanedione was dissolved in methylene chloride]60-, and 6.7 mg (791 mmol) of 5-heptanedione was dissolved in methylene chloride.
After adding 9 mmol), the P obtained in Reference Example 1 was heated at 0 to 5 °C.
16.3 g (83 mmol) of toluenesulfonyl azide was added dropwise. Thereafter, the reaction and post-treatment were carried out in the same manner as in Example 1 (1) to obtain 35 g of an orange oily substance. This was separated by column separation [silica gel: Wakogel C-200, eluent: n-hexane/methylene chloride = 4/l → 2/I (
v/v) ] L/, 4-diazo 1,7-di(I-
22.7 g of (naphthyl)-3,5-heptanedione were obtained as a pale yellow viscous oil. 'HNMRδGll)II((:D(13):3
.. 14 (4H, t, J・8Hx, -C}12C#L
(:0-X2). 3.42 (4H, Jin, J-8Hz
, -C%CH. GO-x 2nd daughter, 7.34-8.03
(14H, m, aromatic ring x 2). IR (Neat): 2120CI+-' (CN2
). 1650cm-' ((:・0). (21 1 . 7-bis(4-chlorosulfonyl-1
-naphthyl)-4-diazo3,5-heptanedione (
In general formula [IV], z-Z'-H, X-X'・-
So2C! .. Synthesis of compounds with m = n -2) Chlorsulfonic acid 25. A chloroform solution in which 1.0 g (27 mmol) of 4-diazo 1.7-di(1-naphthyl)-3.5-hebutanedione I obtained in (1) was dissolved in Og was added dropwise at 0 to 5°C. Below, (2) of Example 1
), the reaction and post-treatment were carried out in the same manner as described above to obtain crude brown oil 1.
5g was obtained. This was divided into column fraction rI1 [silica gel: Wakogel C-200, eluent: n-hexane/methylene chloride-1,/i-+ 1/4→1/9 (v/v)] L
/, 1,7-bis(4-chlorosulfonyl-1-naphthyl)-4-diazo 2.6 g of 3,5-hebutanedione was obtained as a pale yellow viscous oil. l HNMRδppm (CDα3): :l. 22
(4H,t,-CI12C!l!.(:0-X2),
:1.55(4H, t, -tJ, CH2CO-
2), 7.52 (2H, d, J4Hz, napht
hyl-C2X2), 7.71-7.88 (4N,
m, naphthyl-C, , c, X 2),
8.20 (2H, d, J=8Hz, na
phthyl-C8x2), 8.29 (2M, d
, J・8Hz, naphthyl-C3X2), 8.
85 (28, d, J・8Hx, naphthyl-C5
X2). IR (Neat): 2100cm-' ((JJ2
). 1645 cm-' (11:・O). 11V(C}I3ON) λwax (ε): 23
9.4ni (65090). Elemental analysis value (C27H2.α2N206S2) theoretical value:
C%, 53.74. }I! k, 3.34. N turtle, 4.64 Actual value: C%, 53.59. H%
.. 3.51. N! Ii, 4.52, Example 8.1
.. 7-bis(4-methoxysulfonyl-1-naphthyl)
-4-diazo3,5-hebutanedione (general formula [IV
] Ni, l −'LM{, xmx'婁-so3c}
1,7-bis(4-chlorosulfonyl-1-naphthyl)-4-diazo3.5-heptanedione obtained in Example 7 (2). Og (6.6 mmol) in methanol 3
0ml? and 50-methylene chloride in a solution dissolved in 50-
1980 1 g of triethylamine was added dropwise at ~1O<0>C, and the reaction and post-treatment were carried out in the same manner as in Example 2 to obtain 3.7 g of a crude oil. This is separated by column [silica gel:
Wakogel C-200, eluent: n-hexane/ethyl acetate-5/l-+ 2/1 (v/v)] L, 1.
7-bis(4-methoxysul-2-1-naphthyl)-
1.9 g of 4-diazo 3.5-heptanedione was obtained as a white impure product. 'HNMRδppm (CDα3): 3.20 (
4H,t,-11:ICO-X2), 3.51(4H
, t. Ar-CHL-x2), 3.72 (611,
S, So, OH. x2), 7.49 (2N, d, J・
8Hz, naphthyl-C, x2). 7.64
~7.74(4H,m,naphthyl-(:e,h
x 2), 8.15 (2N, dd, J-8Hz and J-2Hz, naphthyl-CaX2), 8
.. 21 (2H, d, J・8Hx.naphthyl-1
:, x2), 8.65 (2H, dd, J・8Hz and J-2Hz, naphthyl-Csx 2). I
R(κBr5): 2120cm-'(-CN2), 1
640 cr! 1-'(C-0), U■((?}f3CN
)λmax (ε): 228.8r+n+(10
1940), Reference Example 4.1.7-G(2-naphthyl)
-3. Synthesis of 5-hebutanethione (l) Synthesis of ethyl 2-naphthoate 21 g (0.7 mol) of 2-naphthoic acid was dissolved in chloroform l. 5J2 and N,N-jethylformamide IO
After 167 g of thionyl chloride was added dropwise to the mixture under reflux, the mixture was stirred and reacted for 1 hour under reflux. After ts condensation of the reaction solution, the residue was diluted with triethylamine 1 at 10"C or less.
0.6 g and 150 g of ethanol. After stirring the reaction for another 1 hour at room temperature, 1°C of water was poured into the mixture.
The organic layer was separated by chloroform extraction. The organic layer was washed with water and then dried with anhydrous Mgso4. The desiccant was separated off, the solvent was distilled off, and the residue was distilled under reduced pressure to give bp. 145-147℃/2m
2 g of ethyl 2-naphthoate II of the mH) fraction was obtained as a colorless oil. This product crystallized after being left to cool. mp.
35.0-36.5°C. (2) Synthesis of 2-naphthalenemethanol Under a nitrogen atmosphere, 19 g of lithium aluminum hydride was added and suspended in 500 g of ethyl ether, and to this was added 11 g (0.55 mol) of ethyl 2-naphthoate obtained in step 11. The dissolved ethyl ether solution was added dropwise at below 10°C, and the reaction was further stirred at room temperature for 1 hour. After the reaction, 200% of ethyl acetate was added dropwise to deactivate the reducing agent, and then the reaction solution was added with 200% of concentrated hydrochloric acid and 20% of concentrated hydrochloric acid. The organic layer was left to stand and separated, and the obtained organic layer was washed with water, dried (anhydrous MgSO4), and the solvent was distilled off. 0 g was obtained as white crystals. mp. 8
0.5-81.5°C. (3) Synthesis of 2-chloromethylnaphthalene 53.7 g (0.34 mol) of 2-naphthalene methanol obtained in (2)
was dissolved in 300° C. of methylene chloride, and 60.7 g of thionyl chloride was added dropwise at 30±5° C., followed by reaction under stirring and reflux for 1 hour. After cooling, the reaction solution was washed twice with water, and anhydrous Mg
After drying with S04 and concentrating, 54 g of the residual oil was distilled under reduced pressure to bp. ! 44.2 g of 2-chloromethylnaphthalene in the 29-133°C/2 rnrnHg fraction was obtained as a pale yellow oil. This product crystallized after being left to cool. mp. 4
6.8-48.0°C. (4) Synthesis of 1,7-di(2-naphthyl)-3,5-hebutanedione 60% sodium hydride in 55% cyclohexane 46%
10.g of 2.4-hebutanedione was charged at 20-25°C. A cyclohexane solution in which Og (0.1 mol) was dissolved was added dropwise, and the mixture was stirred and reacted at the same temperature for 40 minutes. Next, after injecting 24.8 g of N,N,N',N'-tetramethylethylenediamine, 91 g of n-hexane solution of n-butyllithium was added dropwise at -5 to 0°C, and the temperature was further raised to room temperature and reacted for 24 hours. Ta. This reaction solution was then heated to 0-5°C.
35.3 g of 2-chloromethylnaphthalene obtained in (3)
was added dropwise, and the reaction and post-treatment were carried out in the same manner as in Reference Example 2 to obtain 32 g of a yellow oil. Column fraction ra [Silica gel C-
200, eluent: benzene] and 1.7-di(2-
15.4g of naphthyl)-3.5-hebutanedione is pale yellow? Obtained as crystal. ! Op. 123.0-125.0℃
. 'HNMRδpDffl(CDCt3): 2.6
5 (4H, t, J-8112, -CjJCO-
X 2), 3.08 (4H.t, J-8HZ, -CH
CII2C:O-X 2), 3.53(2H,s,-C
OC! l! .. GO-: Keto type 3/5), 5.45 (
LH, s, -c=ch-co-:z nord type 2/5)
, 7.29 (2N, d, J-6.511z, 1-naphthyl-(. x 2) , 7.31 ~
7.40(4}1,m,naphthyl-C,,Ct
x2), 7.50 (21, bs, naphthyl-
C, x2), 7.73~'/. 8L (6H, rx
, napthy1-C3, C. .. CaX
2), 15.46 (IH, bs, OH (enol))
.. .. It{(KBrff): 1600cm-
'((:-0). Example 9.1.7-Bis(6-1 and 8-chlorosulfonyl-2-naphthyl)-4-diazo3.5-hebutanedione (general formula [IV] I.: , l-1”-H,X-
Synthesis of (l) 4-diazo 1,7-di(2-naphthyl)-3
.. Synthesis of 5-hebutanedione 1,7-di(2-naphthyl) obtained in Reference Example 4 (4)
6.85 g (18 mmol) of -3,5-hebutanedione was dissolved in 36 mg of methylene chloride, and 153 g of viveridine was added.
After adding 0 mg (18 mmol), the sample obtained in Reference Example 1 was heated at 0 to 5°C. p-Toluenesulfonazide 3.72g
(19 mmol) was added dropwise. The reaction and post-treatment were carried out in the same manner as in Example 1 (11), and a red viscous oil was obtained.
8g was obtained. This was separated by column separation [silica gel: Wakogel G-200, eluent: n-hexane/methylene chloride =
1/1 (V/V)IL/, 4-diazo1.7-
Di(2-naphthyl)-3,5-heptanedione 6.8
g was obtained as a yellow viscous oil. 'HNMRδppm ((41CfLs): 3.1
2 (8H, bs, -(:JIJj, CO-x2),
7.33 (2}1, d, J・8Hz, naphthy
l-(;4X2), 7.41-7.62(4H, m,
naphthyl-C5. C7X2). 7.64 (
2H, bs, naphLhyl-C+ X2), 7.
75 ~7.81 (6H, IIl, naphthyl
C,. C6, C6X 2). IR (Neat): 2100co+-'(-(:N
2), 1650cm-'(C■0),12) 1,
7-bis(6-1 and 8-chlorosulfonyl-2-naphthyl)-4-diazo3,5-hebutanedione (general formula [
IV]! .. : at, l-1"-H, X-X'-SO2C
l. Synthesis of compound m-n-2) In 14.7 g of chlorosulfonic acid, 6.4 g (15.7 A chloroform solution in which 1 mmol) was dissolved was added dropwise at 0 to 5°C, and the reaction and post-treatment were carried out in the same manner as in (2) of Example 1 to obtain 1.1 g of a yellow oil. This was divided into column fraction M [silica gel: Wakogel C-200, eluent: n-hexane/methylene chloride = 1/2 (v/v) It,, 1,7-bis(6- and 8-chlorosulfonyl-2- naphthyl)−
4-diazo 3.5-hebutanedione (1:1 mixture)
250B was obtained as a slightly yellow viscous oil. 'HNMRδppln((:D(f3): 3.1
9 ~3.31 (8H.m, -C!LICjX-X
2), 7.52-8.36 (8H, lI1, aromatic ring x
2), 8.54 (2H, bs, naphthyl-C
,X 2:6-SOzGl isomer]/2) ,8.71
(2H, d, J・911z, naphthyl-C7x
2:8-SO2Cl isomer 1/2) ,, JR(Neat): 2110cm-'(-CNz)
.. 1650c ``'(C・O). Elemental analysis value (C27H2.02N206S2) theoretical value:
C$, 53.73; }1%, 3.34: N! k
, 4.64 Actual value: C zero, 53.49. H! k,
3.45. N turtle, 4.81,? Example 5. Synthesis of 1.7-bis(4-chlorophenyl)-3,5-hebutanedione Cyclohexane 110m7! 9.2 g of 60% sodium hydride was added to the 2,4-
A cyclohexane solution in which 20.0 g (0.2 mol) of benzanedione was dissolved was added dropwise, and the mixture was stirred and reacted at the same temperature for 40 minutes. Next, after injecting 49.6 g of N,N,N',N'-tetramethylethylenediamine, the n-
182 g of a n-hexane solution of butyl lithium was added dropwise, and the temperature was further raised to room temperature and reacted for 24 hours. Next, 74.7 g of 4-chlorobenzyl chloride was added dropwise to this reaction solution at 0 to 5° C., and the reaction was then subjected to post-treatment in the same manner as in Reference Example 2 to obtain 69 g of red-orange semi-molten crystals. This was recrystallized from methanol and 1,7-bis(4-chlorophenyl)'
- 24.7 g of 3.5-hebutanedione was obtained as white prism crystals. Death... 74.6-76. lt:. 'HNMRδI)pIn((:D(13): 2.
55 (411,t,J■7.3Hz,Ar-CH2(
:Ll(:0-X2), 2.88(4H,t,J-
7.3}12,Ar-CH,-X2). 3.51 (
211,s, -COCizCO-: Keto type 3/20)
, 5.37 (1}1,s, -C-C}j-CO-: enol type 17/20), 7.07-7.11 (411,
■ ? , phenyl-C2, C6x2), 7.23x7
.. 26 (4H, m, phenyl-C3, CF, X
2) , 15.35 (IH,s,-Off(e
nol)). rR (KBr tablet): 3300cm-', 1640
cm-' ((:■0), 1600C!I+-'Example 10. 1,7-bis(4-chloro-3-chlorosulfonylphenyl)-4-diazo-3,5-heptanedione (general formula [■1 In , Y-Y'-(!, X-X
Synthesis of '-So2 (; I, m = n-2 compound) (11 Synthesis of 1.7-bis(4-chlorophenyl)-4-diazo3.5-hebutanedione 1. Obtained in Reference Example 5. 7-bis(4-chlorophenyl)-
3.5-Hebutanedione 12. Og (34.4 mmol) was dissolved in 70-methylene chloride and biperidine 2.9-
g + 34.4 mmol), and then 7.1 g (36
mmol) was added dropwise. Thereafter, the reaction and post-treatment were carried out in the same manner as in Example 1 (1) to obtain 15 g of an oily substance. This was applied to column 11 [Silica gel: Wakogel C-200,
Eluent: methylene chloride 1, 1,7-bis(4-chlorophenyl)-4-diazo, 3,5-hebutanedione 1
.. 2 g was obtained as pale yellow crystals. ? p. 8: 3°C (decomposition). 'HNMRδI)l)ffi((:DCt3): 2
.. 93 ~3.01 (8N, m, Ar-%CHIGo-
x2). 7.12 ~7.16 (4H.m, phen
yl-C2, C6x2), 7.24 ~ 7.27 (4
H, m, phenyl-C3, G5x2). IR (κBri7): 2100cm-'(-CN2),
1650cm-'(C・0), UV((Jl3CN)
λwrax (ε): 225. Onm (315
50). +21 1.7-bis(4-chloro-3-chlorosulfonylphenyl)-4-diazo3.5-hebutanedione (in general formula [■1, Y-Y'-Cl .X-X'
Synthesis of 1.7-bis(4-chlorophenyl)-4-diazo-3.5-heptanedione obtained in (1) in 9.9 g of chlorosulfonic acid A chloroform solution in which 3.98 g (10.6 mmol) was dissolved was added dropwise at 0 to 5°C, and the reaction and post-treatment were carried out in the same manner as in (2) of Example 1 to obtain 1.3 g of crude oil. This was subjected to column fraction 1!1 [silica gel: Wako Gel C-200, eluent: methylene chloride] and converted to 1,7-bis(4-chloro-3-chlorosulfonylphenyl)-4-diazo3.5- Butanedione l.1
g was obtained as a pale yellow viscous oil. 'HNMR δppm (CDcL): 3.08
(8tl,s, -C%-x books), 7.55 (4H,s,
phenyl-CB, (:6X2), 7.99 (2H
, s, phenyl-G2X2). JR (Neat): 2110CI! 1-'(-(;
N2), 1655cr' (CJ). UV (CH3
ON) λ old × (ε): 227. Onm(3414
0). 287.0 nm (5640). Elemental analysis value (C+sH+4CI.4NzOsS2) Theoretical value: (J, 39.88. HX, 2.47: N
! k, 4.90 Actual value: C! Ii, 40.09;
H turtle. 2.31; N%;, 4.82, Reference example 6
.. 1. Synthesis of 7-bis(4-methoxyphenyl)-3,5-hebutanedione 60% sodium hydride in 200 parts of cyclohexane
A cyclohexane solution in which 37.3 g (0.37 mol) of 2.4-bentanedione was dissolved was added dropwise at 20 to 25° C., and the mixture was stirred and reacted at the same temperature for 40 minutes. Next, after injecting 91.8 g of N,N,N',N'-tetramethylethylenediamine, 337 g of n-hexane solution of n-butyllithium was added dropwise at -5 to 0°C, and the temperature was further raised to room temperature and reacted for 24 hours. Ta. Then add 0 to this reaction solution.
133 g of 4-methoxybenzyl chloride at ~5°C? The reaction and post-treatment were carried out in the same manner as in Reference Example 2.
Crude crystals were obtained. This was recrystallized from ethanol and 1.
95.1 g of 7-bis(4-methoxyphenyl)-:l,5-heptanedione was obtained as pale yellow short needles. mp
.. 73.5-7642°C. 'HNMRδPPffi (CDl:13): 2.
54 (4N, t, J・8Hz, Ar-CH2c6co-
x2), 2.86(4Lt, J・811z, ^r-(
:jj,-x 2) ,3.78(8H,s,-(;i
j, 10-X 2) , 5.41 (IH, s, -C-
(Jj-GO-: 1 enol type 10/10), 6.82 (4}!, d, J
・9Hz, phenyl-1. , c, x2), 7.0
9 (4H, d, Js9}IZ. phenyl-C3,
C,, X2), 15.43<IH, bs, -OH). IR (KBrvE): 1600cm-' (C:-
C). Example 11 1,7-bis(3-chlorosulfonyl-4
(1-methoxyphenyl)-4-diazo-3,5-hebutanedione ('l'-Y'-0(;
}I3,X-X'--SO■α, m=n=2 compound)
Synthesis fl3 Synthesis of 1,7-bis(4-methoxyphenyl)-4-diazo-3,5-heptanedione 1,7-bis(4-methoxyphenyl)-3 obtained in Reference Example 6
.. 4.5 g (13.2 mmol) of 5-hebutanedione was dissolved in 26 mmol of methylene chloride, and 1.5 g (13.2 mmol) of 5-hebutanedione was dissolved in 1. .. lmg
After adding (13.2 mmol), 2.73 g (13
.. 9 mmol> was added dropwise. The reaction and post-treatment were carried out in the same manner as in Example 1 (1), and 5.6 g of dark brown oil was obtained.
I got it. This was separated by column [silica gel: Wako gel G]
-200, eluent: methylene chloride, 1,7-bis(
2.4 g of 4-methoxyphenyl)-4-diazo-3.5-hebutanedione were obtained as a yellow viscous oil. 'HNMRδppm ((DCt3): 2.87~3
.. 03 (8ft, m, -1:H, -x4), 3.7
8 (6H,s, (:JO-x2), 6.82 (4
8, d, J・8.6Hz, phenyl-C,,C. X
2), 7.13 (4H, d, J・8.6Hz, phe
nyl-G2, G6X 2). JR (Neat): 2900cm", 2100cm-
'(-CN2), 1650cm-'(C・0). (2) 1,7-bis(3-chlorosulfonyl-4-
methoxyphenyl)-4-diazo-3,5-hebutanedione (general formula [II], Y-Y'-0(:H3,
X-X'--SO2Ci. Synthesis of compound m-n・2) k in 5.6 g of Kulsul*nllIe: (1) 114
Ta f. 7-His-(4-methoxyphenyl)-4-diazo 3.5-hebutanedione 2.2 g (6 mmol)
A chloroform solution in which was dissolved was added dropwise at 0 to 5°C, and the reaction and post-treatment were carried out in the same manner as in Example 1 (2) to obtain 1.8 g of a crude product. This was separated by column separation [silica gel: Wakogel C-200, eluent: n-hexane/
Ethyl acetate = 1/1 (v/v)] 1,7-bis(3-chlorosulfonyl-4-methoxyphenyl)-4
-Diazole 1.7 g of 3,5-hebutanedione was obtained as pale yellow powder crystals. mp. 51.0-52.0°C. 'tlNMR l3ppm (CDα3): 2.99
~3.05 (8tl,m,-(:%-X 4) ,4
.. 03 (6tl,s, (Jl,0-X 2) , 7
.. 06 (28, d, J・8.8Hz, phenyl<
,X2), 7.57(2H, dd, J・8.8Hz,
and J-2.2Hz, phenyl 10. x2),
7.79 (2H.d.J-2.2flz, pheny
l-(:2x2). IR (KBr tablet): 2100eam-'(-CN2). 1650cr' (C・0). ! JV (CH, CN) λwax (ε) +228. O
n! ! +(35000) ,306.0nrB(755
0). Elemental analysis value (C21H2.Cft2N20sS2) Theoretical value: C96.44.77; H96,3.58
.. Nk, 4.97 Actual value: (J, 44.80;
H51;, 3.51; N%, 5.07, Application example 1, 1.7-bis(3-chlorosulfonyl-
4-methylphenyl)-4-diazo 3.5-hebutanedione I. 5g and para-cresol novolac resin (
A photosensitive material A was obtained by stirring and dissolving 8.5 g of diethylene glycol dimethyl ether (molecular weight: 10,000) in 20 g of diethylene glycol dimethyl ether. A pattern forming method using a photosensitive material according to the present invention will be explained with reference to FIG. The photosensitive material A obtained in step 7 was spin-coated onto a substrate 1 made of a semiconductor or the like, and prebaterized on a hot plate at 90 DEG C. for 2 minutes to obtain a photosensitive material film 2 having a thickness of 1.2 mm. (Figure 1(a)). Note that an insulating film, a conductive film, etc. are often formed on the substrate 1. Next, 248.4nm
was selectively exposed to the excimer laser 4 through a mask 5. (Figure 1(b)). And finally, NMD-3 (
The exposed portion of the photosensitive material film 2 was dissolved and removed by developing for 60 seconds with a resin pattern (manufactured by Tokyo Ohka Kogyo Co., Ltd.) to obtain a resin pattern 2a. (Figure 1 (C)). The resin pattern 2a had a good shape with an aspect ratio of 90 degrees, and was a submicron pattern with a film loss of several percent or less. The surface of the substrate 1 was etched using this pattern 2a as an etching mask. FIG. 2 shows ultraviolet spectroscopy of this film 2 as a resist material. In FIG. 2, the solid line (1) shows the results before exposure, and the broken line (---) shows the results after exposure. As is clear from this result, the change in transmittance before and after exposure at 248.4 nm was a large value of about 74%, indicating that this photosensitive material and the photosensitive compound of the present invention showed good reactivity to KrF excimer laser. I understand that. Application example 2. 1,7-bis(3-chlorosulfonyl-) obtained in Example 1
4-Methylphenyl)-4-diazo 3.5-hebutanedione I. 5g and metacresol novolak resin (
A photosensitive material was obtained by stirring and dissolving 8.5 g of ethyl cellosolve acetate (with a molecular weight of 20,000) in 20 g of ethyl cellosolve acetate. Using this, ultraviolet spectroscopy measurements of batanine formation skin were carried out in the same manner as in Application Example 1, and good results almost equivalent to those in Application Example 1 were obtained. Application example 3. 1,7-bis(4-chlorosulfonyl=
A photosensitive material was obtained by stirring and dissolving 1.5 g of 1-naphthyl)-4-diazo3.5-hebutanedione and 8.5 g of para-cresol novolac resin (molecular weight: 10,000) in 20 g of diethylene glycol dimethyl ether. Using this, pattern formation and ultraviolet spectroscopy measurements were performed in the same manner as in Application Example 1, and good results almost equivalent to those in Application Example 1 were obtained. Application example 4. 1.5 g of 1.7-bis(4-chloro-3-chlorosulfonylphenyl)-4-diazo-3.5-heptanedione obtained in Example IO and meta-cresol novolak resin (
A photosensitive material was obtained by stirring and dissolving 8.5 g of ethyl cellosolve acetate (with a molecular weight of 20,000) in 20 g of ethyl cellosolve acetate. Using this, pattern formation and ultraviolet spectroscopy measurements were performed in the same manner as in Application Example 1, and good results almost equivalent to those in Application Example 1 were obtained. Note that the resin in the photosensitive material is required to be highly transparent to far ultraviolet light such as 248.4 nm in order to reduce surface absorption of light in the photosensitive material. Similar good results can be obtained by using styrene resin, maleimide resin, hydroxystyrene resin, orthochlorometacresol/novolak resin as resins other than those used in Application Examples 1 to 4, but of course the invention is limited to these. Not that it will be done. Regarding the solvent, any solvent may be used as long as it can dissolve the resin and the photoreceptor. In this example, ethyl cellosolve acetate and diethylene glycol dimethyl ether were used, but the solvent is not limited to these. Application Examples 5 to 16 The compounds of the present invention obtained in each example were used as photosensitizers, and poly(paravinylphenol) resin (molecules 17,0
00), a photosensitive material was obtained using diethylene glycol dimethyl ether as a solvent. These photosensitive materials were spin-coated onto a semiconductor substrate and prebaked to prepare a photosensitive material sample with a film thickness of 1.0-. The dissolution rate in aqueous solution was measured. Further, a pattern was formed using the above photosensitive material in the same manner as in Application Example 1. The results are shown in Table 1. As is clear from the results shown in J's Lower Margin Table 1, good patterns were obtained with each photosensitive material. In addition, the dissolution rate of the films made with each photosensitive material was 150 nm/min or less, and the dissolution rate of the film made similarly using only poly(barabinylphenol) resin (molecular weight 7,000) was (4,000 nm/min).
A very good value was obtained compared to OOr+m/min). As is clear from this result, the compound according to the present invention has
It can be seen that it has the effect of reducing the rate of dissolution of photosensitive materials in alkaline developers. In addition, in Application Examples 5 to 16, styrene resin, pidroxystyrene resin, baracresol/novolac resin, metacresol/novolac resin, orthochlorometacresol/novolac resin, etc. Approximately the same results can be obtained by using 1 (/). Application Example 17 A contrast 1/enhanced material for pattern formation consisting of the following composition was prepared: 1.7-bis(3-chlorosulfonyl-4-methylphenyl) -4-diazo3.5-hebutanedione 4.
Og Balak I Nosol Novolac Resin (Molecular Weight 5,000) 2.5
g Ethyl cellosolve acetate 20.0 g The pattern-forming contrast-enhancing material thus prepared has a thickness of 0 when used as a pattern-forming organic film.
.. Before exposure with a κRF excimer laser of 248.4 nm at 12 μ■ {the difference in transmittance at 248.4 nm is over 70%, which is very high, and it works to improve the contrast of the incident light. Understood. FIG. 3 shows the resist 1 pattern formation and lithography process using the pattern-forming contrast-enhancing material according to the present invention. A body resist 3 (MP2400
: Sibley Co., Ltd.) to a thickness of 1.5 μm (see Figure 3 (
a)). Next, a water-soluble organic film 6, such as a mixed solution of pullulan and polyvinylpyrrolidone, is applied and formed on the photoresist 3. At this time, the mixing weight ratio of bullulan and polyvinylpyrrolidone was 4:1, and the film thickness at this time was approximately 0.1 to 0.3 pJ so as not to affect pattern formation. Note that this water-soluble organic film as an intermediate layer is provided so that the lower resist layer and the upper pattern-forming organic film do not mix, and is not necessarily required (FIG. 3(b)). next,
Layer 7 of the patterned contrast-enhancing material of the present invention was spin-coated to a thickness of about 0.12 mm. Here, the lower resist layer, the intermediate water-soluble organic film, and the water-soluble organic film and the single-layer pattern-forming organic film were laminated with excellent adhesion. Then, reduction projection exposure method (5:1 reduction, N8 = O
248.4 nm selectively through mask 5 by J6)
Expose the KrF excimer laser 4 (Figure 3 (C)
)). Then, the pattern forming contrast enhancer 7 of the present invention, which is a layer of contrast enhancement, and the water-soluble organic film 6, which is an intermediate layer, are simultaneously removed using an ordinary alkaline developer, and at the same time, the lower resist 3 is developed to form a resist pattern 3b. Figure 3(d)). At this time, the resist pattern 3b was able to resolve lines and spaces of 0.3 μm with improved contrast (aspect ratio of 90 degrees). In addition, 1,7-bis(3-chlorochloride-4-menalphenyl)-4-diazo3.
Substantially the same results can be obtained even when the compounds of the present invention obtained in Examples 2 to 1l are used as photosensitizers in place of 5-hebutanedione. [Effects of the Invention] The present invention provides a novel photosensitive compound having excellent reactivity to, for example, a 248.4 nm excimer laser, and provides a photosensitive material using the photosensitive compound according to the present invention. For example, κrF excimer laser (248.4
When applied to deep UV (nm) exposure resists and contrast-enhancing materials, fine patterns with good shapes on the submicron order can be easily obtained. It is of great value for formation.
第1図は、本発明化合物を含んでなる感光材料を用いた
応用例1のパターン形成方法の工程断面図、第2図は本
発明化合物を含んでなる応用例1の感光材料の248.
4nm近傍の紫外分光特性図(但し、実線は露光前、破
線は露光後)、第3図は、応用例17のパターン形成方
法の工程断面図、第4図は従来のレジスト(MP240
0)を用いたパターン形成方法の工程断面図、第5図は
MP2400の248.4nの近傍の紫外分光特性図(
但し、実線は露光前、破線は露光後)である。
1・一基板、2・・・パターン形成用感光材料膜、3・
−ポジレジスト、4=KrFエキシマレーザ、5・一マ
スク、2a,3a,3b =樹脂パターン、6・一水溶
性有機膜、7−パターン形成用コントラストエンハンス
ト材料膜FIG. 1 is a process cross-sectional view of a pattern forming method of Application Example 1 using a photosensitive material containing the compound of the present invention, and FIG. 2 is a 248.degree.
Ultraviolet spectral characteristics near 4 nm (solid line is before exposure, broken line is after exposure), FIG. 3 is a process cross-sectional view of the pattern forming method of Application Example 17, and FIG.
0), and Figure 5 is an ultraviolet spectral characteristic diagram near 248.4n of MP2400 (
However, the solid line is before exposure, and the broken line is after exposure). 1. One substrate, 2... Photosensitive material film for pattern formation, 3.
-Positive resist, 4=KrF excimer laser, 5.1 mask, 2a, 3a, 3b=resin pattern, 6.1 water-soluble organic film, 7-contrast enhancement material film for pattern formation
Claims (4)
は▲数式、化学式、表等があります▼を表わし{但し、
Xは水素原子、−SO_2Cl、−SO_2Br、▲数
式、化学式、表等があります▼、−SO_3H又は−S
O_3R^5を表わし(但し、R^3、R^4は夫々独
立して水素原子又は置換基を有していてもよいアルキル
基を表わすか、又はR^3、R^4及びNとでピペラジ
ン環、ピペリジン環、ピロリジン環又はモルホリン環等
の如き環を形成していてもよく、R^5はアルキル基を
表わす。また、−SO_2Cl、−SO_2Br及び−
SO_3Hはその第4級塩を含む。)、Yは水素原子、
アルキル基、アルコキシ基又はハロゲン原子を表わし、
Zは水素原子、アルキル基、アルコキシ基又はハロゲン
原子を表わす。}、R^2は▲数式、化学式、表等があ
ります▼又は▲数式、化学式、表等があります▼を表わ
し{但し、X′は水素原子、−SO_2Cl、−SO_
2Br、▲数式、化学式、表等があります▼、−SO_
3H又は−SO_3R^8を表わし(但し、R^6、R
^7は夫々独立して水素原子又は置換基を有していても
よいアルキル基を表わすか、又はR^6、R^7及びN
とでピペラジン環、ピペリジン環、ピロリジン環又はモ
ルホリン環等の如き環を形成していてもよく、R^8は
アルキル基を表わす。また、−SO_2Cl、−SO_
2Br及び−SO_3Hはその第4級塩を含む。)、Y
′は水素原子、アルキル基、アルコキシ基又はハロゲン
原子を表わし、Z′は水素原子、アルキル基、アルコキ
シ基又はハロゲン原子を表わす。}、m及びnは1〜2
0の整数を表わす(但し、Y及びY′が共に水素原子で
ある場合を除く。)。]で示される化合物。(1) General formula [ I ] ▲ There are mathematical formulas, chemical formulas, tables, etc. ▼ [ I ] [In the formula, R^1 is ▲ There are mathematical formulas, chemical formulas, tables, etc. ▼ or ▲ There are mathematical formulas, chemical formulas, tables, etc. ▼ represents {however,
X is a hydrogen atom, -SO_2Cl, -SO_2Br, ▲There are mathematical formulas, chemical formulas, tables, etc.▼, -SO_3H or -S
O_3R^5 (However, R^3 and R^4 each independently represent a hydrogen atom or an alkyl group that may have a substituent, or R^3, R^4 and N They may form a ring such as a piperazine ring, piperidine ring, pyrrolidine ring or morpholine ring, and R^5 represents an alkyl group. Also, -SO_2Cl, -SO_2Br and -
SO_3H includes its quaternary salt. ), Y is a hydrogen atom,
represents an alkyl group, an alkoxy group or a halogen atom,
Z represents a hydrogen atom, an alkyl group, an alkoxy group or a halogen atom. }, R^2 represents ▲There are mathematical formulas, chemical formulas, tables, etc.▼ or ▲There are mathematical formulas, chemical formulas, tables, etc.▼ {However, X' is a hydrogen atom, -SO_2Cl, -SO_
2Br, ▲There are mathematical formulas, chemical formulas, tables, etc.▼, -SO_
Represents 3H or -SO_3R^8 (However, R^6, R
^7 each independently represents a hydrogen atom or an alkyl group which may have a substituent, or R^6, R^7 and N
and may form a ring such as a piperazine ring, piperidine ring, pyrrolidine ring or morpholine ring, and R^8 represents an alkyl group. Also, -SO_2Cl, -SO_
2Br and -SO_3H include their quaternary salts. ), Y
' represents a hydrogen atom, an alkyl group, an alkoxy group, or a halogen atom, and Z' represents a hydrogen atom, an alkyl group, an alkoxy group, or a halogen atom. }, m and n are 1-2
Represents an integer of 0 (except when Y and Y' are both hydrogen atoms). ] A compound represented by.
。(4) The compound represented by the general formula [I] has the general formula [IV] ▲ There are mathematical formulas, chemical formulas, tables, etc. ▼ [IV] ▲ There are mathematical formulas, chemical formulas, tables, etc. ▼ (In the formula, X, X', The compound according to claim 1, wherein Z, Z', m and n are the same as defined above.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1191945A JPH0355549A (en) | 1989-07-25 | 1989-07-25 | Novel photosensitive compound |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1191945A JPH0355549A (en) | 1989-07-25 | 1989-07-25 | Novel photosensitive compound |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0355549A true JPH0355549A (en) | 1991-03-11 |
Family
ID=16283075
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1191945A Pending JPH0355549A (en) | 1989-07-25 | 1989-07-25 | Novel photosensitive compound |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0355549A (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01188852A (en) * | 1988-01-22 | 1989-07-28 | Matsushita Electric Ind Co Ltd | Resist using photosensitive compound |
| JPH02865A (en) * | 1987-12-04 | 1990-01-05 | Matsushita Electric Ind Co Ltd | Photosensitive material and pattern forming method by using said material |
-
1989
- 1989-07-25 JP JP1191945A patent/JPH0355549A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02865A (en) * | 1987-12-04 | 1990-01-05 | Matsushita Electric Ind Co Ltd | Photosensitive material and pattern forming method by using said material |
| JPH01188852A (en) * | 1988-01-22 | 1989-07-28 | Matsushita Electric Ind Co Ltd | Resist using photosensitive compound |
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