JPH035645B2 - - Google Patents
Info
- Publication number
- JPH035645B2 JPH035645B2 JP17148583A JP17148583A JPH035645B2 JP H035645 B2 JPH035645 B2 JP H035645B2 JP 17148583 A JP17148583 A JP 17148583A JP 17148583 A JP17148583 A JP 17148583A JP H035645 B2 JPH035645 B2 JP H035645B2
- Authority
- JP
- Japan
- Prior art keywords
- aluminum
- film
- iron
- silicon
- alloy film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 37
- 229910045601 alloy Inorganic materials 0.000 claims description 30
- 239000000956 alloy Substances 0.000 claims description 30
- 229910052782 aluminium Inorganic materials 0.000 claims description 29
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 28
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 24
- 229910052710 silicon Inorganic materials 0.000 claims description 24
- 239000010703 silicon Substances 0.000 claims description 24
- 229910052742 iron Inorganic materials 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 18
- 230000035699 permeability Effects 0.000 claims description 15
- 238000007740 vapor deposition Methods 0.000 claims description 14
- 238000004519 manufacturing process Methods 0.000 claims description 13
- 239000000203 mixture Substances 0.000 claims description 9
- 238000010894 electron beam technology Methods 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 5
- 229910000676 Si alloy Inorganic materials 0.000 description 24
- -1 Iron-aluminum-silicon Chemical compound 0.000 description 23
- 239000000758 substrate Substances 0.000 description 11
- 238000000151 deposition Methods 0.000 description 10
- 230000008021 deposition Effects 0.000 description 7
- 238000005566 electron beam evaporation Methods 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 4
- 239000010410 layer Substances 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 229910000640 Fe alloy Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000013590 bulk material Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 239000000696 magnetic material Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000005019 vapor deposition process Methods 0.000 description 2
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910001004 magnetic alloy Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000006089 photosensitive glass Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
- 229910000859 α-Fe Inorganic materials 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
- Magnetic Heads (AREA)
- Thin Magnetic Films (AREA)
Description
【発明の詳細な説明】
＜技術分野＞
本発明は鉄とアルミニウムと硅素とを含有する
磁性合金膜を作成する為の新規な製造方法に関す
る。DETAILED DESCRIPTION OF THE INVENTION <Technical Field> The present invention relates to a novel manufacturing method for creating a magnetic alloy film containing iron, aluminum, and silicon.
＜従来技術＞
従来、高飽和磁束密度、高透磁率であり磁気ヘ
ツド材料として極めて有用のものとして鉄・アル
ミニウム・硅素の合金がよく知られている。<Prior Art> Iron-aluminum-silicon alloys have been well known as having high saturation magnetic flux density and high magnetic permeability and being extremely useful as magnetic head materials.
従来の鉄・アルミニウム・硅素の合金の膜形成
方法としては次の様なものが知られている。即
ち、
(1) 鉄・アルミニウム・硅素の合金バルク材を研
磨する事によつて所定の膜厚に加工する方法、
(2) スパツタリングにより所定の膜厚の鉄・アル
ミニウム・硅素の合金膜を形成する方法、
(3) 液体急冷法により鉄・アルミニウム・硅素の
合金膜を形成する方法、
である。しかし上記(1)の方法は鉄・アルミニウ
ム・硅素の合金のバルク材が脆性を有するため非
常に加工しにくいものである。又上記(2)の方法で
は成膜速度が非常に遅いため磁気ヘツドコア等の
比較的に厚い膜を作成する為の製法としては量産
性が悪く適さない。又上記(3)の方法では鉄・アル
ミニウム・硅素の合金膜の膜厚が作成条件によつ
て限定されてしまうという制約があり好ましくな
い。更に作成膜を加工する場合における鉄・アル
ミニウム・硅素の合金膜の脆性の問題及び粒径の
大きさにより高周波帯域での良好な特性が望めな
いという問題があり好ましい方法とは言えない。 The following methods are known as conventional methods for forming films of alloys of iron, aluminum, and silicon. Namely, (1) a method of processing an alloy bulk material of iron, aluminum, and silicon to a predetermined thickness by polishing it, and (2) a method of forming an alloy film of iron, aluminum, and silicon to a predetermined thickness by sputtering. (3) A method of forming an alloy film of iron, aluminum, and silicon using a liquid quenching method. However, method (1) above is extremely difficult to process because the bulk material of the iron-aluminum-silicon alloy is brittle. Furthermore, since the method (2) described above has a very slow film formation rate, it is not suitable for mass production and is not suitable for manufacturing relatively thick films such as magnetic head cores. Furthermore, the above method (3) has a limitation in that the thickness of the iron-aluminum-silicon alloy film is limited by the production conditions, which is not preferable. Furthermore, when processing the formed film, there is the problem of the brittleness of the iron-aluminum-silicon alloy film and the problem that good characteristics in a high frequency band cannot be expected due to the size of the grains, so it cannot be said to be a preferable method.
しかし、上記した問題点を全て解消した製造方
法として本発明者等は既に鉄とアルミニウムと硅
素とによつて構成されたアルミニウムの組成が１
乃至6tw％、硅素の組成が20乃至35wt％である合
金タブレツトに真空中で電子ビームを照射して上
記合金タブレツトを加熱せしめ、該加熱によつて
前記合金タブレツトより蒸発した物質を基板上に
蒸着せしめることによつて適正組成の磁性膜を形
成し更にその磁性膜を400℃乃至800℃の温度範囲
で熱処理することによつて良質な鉄・アルミニウ
ム・硅素の合金膜を作成することができる旨の提
案を行なつている（特願昭58−11041号）。 However, the present inventors have already developed a manufacturing method that solves all of the above-mentioned problems, in which the composition of aluminum composed of iron, aluminum, and silicon is 1.
An alloy tablet having a silicon composition of 20 to 35 wt% and a silicon composition of 20 to 35 wt% is irradiated with an electron beam in a vacuum to heat the alloy tablet, and the substance evaporated from the alloy tablet by the heating is deposited on the substrate. that a high-quality iron-aluminum-silicon alloy film can be created by forming a magnetic film with an appropriate composition by heating the film, and then heat-treating the magnetic film in a temperature range of 400°C to 800°C. (Patent Application No. 58-11041).
＜目的＞
本発明は上記した如き電子ビームによる蒸着法
を用いて鉄・アルミニウム・硅素の合金膜を作成
する手法について更に改善を施した新規且つ有用
な製造方法を提供することを目的とするものであ
る。<Purpose> The purpose of the present invention is to provide a novel and useful manufacturing method that further improves the method of creating an alloy film of iron, aluminum, and silicon using the electron beam evaporation method as described above. It is.
＜実施例＞
次に本発明に係る高透磁率合金膜の製造方法の
実施例について詳細に説明する。<Example> Next, an example of the method for manufacturing a high magnetic permeability alloy film according to the present invention will be described in detail.
第１図は本発明に係る製法において用いた電子
ビーム蒸着装置の構成説明図である。１は真空ベ
ルジヤーであつてこの内部は高真空に保たれる。
２は蒸着膜を付着する為の基板である。３は該基
板２を加熱する為のヒーターである。４はハース
（るつぼ）であり該ハース４内に合金タブレツト
５が配置される。６はフイラメントであり、該フ
イラメント６から発せられた電子ビーム７は磁界
によつて曲げられて合金タブレツト５に照射せら
れる。８は加熱せられた上記合金タブレツト５か
ら蒸発した物質を遮断あるいは通過せしめるシヤ
ツターである。勿論上記合金タブレツト５の組成
はアルミニウムを１乃至6wt％、硅素を20乃至
35wt％、残りを鉄とする。上記基板２は鉄・ア
ルミニウム・硅素の合金と熱膨張係数が近い、即
ち熱膨張係数が100〜180（×10-7deg-1）程度の感
光性ガラス（例えばコーニング社製のホトセラ
ム、ホヤガラス社製のPEGシリーズ）、結晶性ガ
ラス、非磁性フエライト、セラミツク、ステンレ
ス（SUS304）等である。 FIG. 1 is an explanatory diagram of the configuration of an electron beam evaporation apparatus used in the manufacturing method according to the present invention. 1 is a vacuum bell gear, the interior of which is maintained at a high vacuum.
2 is a substrate for attaching a vapor deposition film. 3 is a heater for heating the substrate 2; 4 is a hearth (crucible), and an alloy tablet 5 is placed inside the hearth 4. 6 is a filament, and an electron beam 7 emitted from the filament 6 is bent by a magnetic field and irradiated onto the alloy tablet 5. Reference numeral 8 denotes a shutter for blocking or allowing the substance evaporated from the heated alloy tablet 5 to pass through. Of course, the composition of the alloy tablet 5 is 1 to 6 wt% aluminum and 20 to 6 wt% silicon.
35wt%, the rest being iron. The substrate 2 is a photosensitive glass (for example, Photoceram manufactured by Corning, Hoya Glass) whose coefficient of thermal expansion is close to that of an alloy of iron, aluminum, and silicon, that is, the coefficient of thermal expansion is approximately 100 to 180 (×10 -7 deg -1 ). PEG series), crystalline glass, non-magnetic ferrite, ceramic, stainless steel (SUS304), etc.
以上の構成の電子ビーム蒸着装置を用いて次の
様な２種の蒸着条件にて鉄・アルミニウム・硅素
の合金膜を作成した。 Using the electron beam evaporation apparatus with the above configuration, alloy films of iron, aluminum, and silicon were created under the following two types of evaporation conditions.
即ち、第１の蒸着条件では合金タブレツト５を
アルミニウムが4wt％、硅素が27.5wt％の組成の
ものを使用し、基板２の温度を蒸着膜の密着性を
向上させる為にヒータ３により400℃に加熱（100
〜600℃が好ましい）し、蒸着工程における電子
銃への投入パワーを10KWに設定し、電子ビーム
をハース４内に掃射（sweep）し、上記電子銃へ
の投入パワーを上昇せしめ10KWに達した時から
３分間経過する迄の間シヤツター８を閉成して基
板２上において蒸着を遮断し、その後シヤツター
８を開成して基板２上において蒸着膜を形成し
た。そして蒸着時間を10分間として4.1μｍの膜厚
を得た。 That is, in the first vapor deposition condition, the alloy tablet 5 has a composition of 4 wt% aluminum and 27.5 wt% silicon, and the temperature of the substrate 2 is raised to 400°C by the heater 3 in order to improve the adhesion of the vapor deposited film. Heat to (100
The input power to the electron gun in the vapor deposition process was set to 10 KW, the electron beam was swept into the hearth 4, and the input power to the electron gun was increased to reach 10 KW. The shutter 8 was closed to block vapor deposition on the substrate 2 until 3 minutes had elapsed, and then the shutter 8 was opened to form a vapor deposited film on the substrate 2. Then, the deposition time was set to 10 minutes, and a film thickness of 4.1 μm was obtained.
又第２の蒸着条件では、合金タブレツト５をア
ルミニウムが5wt％、硅素が26wt％の組成のもの
を使用し、基板２の温度を蒸着膜の密着性を向上
させる為にヒータ３により400℃に加熱（100〜
600℃が好ましい）し、蒸着工程における電子銃
への投入パワーを10KWに設定し電子ビームをハ
ース４内全体に掃射（sweep）し、上記電子銃へ
の投入パワーを上昇せしめ10KWに達した時から
３分間経過する迄の間シヤツター８を閉成して基
板２上における蒸着を遮断し、その後シヤツター
８を開成して基板２上において蒸着膜を形成し
た。そして蒸着時間を20分間として7.4μｍの膜厚
を得た。 In the second vapor deposition condition, an alloy tablet 5 with a composition of 5 wt% aluminum and 26 wt% silicon was used, and the temperature of the substrate 2 was raised to 400°C by a heater 3 in order to improve the adhesion of the deposited film. Heating (100~
(preferably 600℃), set the input power to the electron gun in the vapor deposition process to 10KW, sweep the electron beam throughout the hearth 4, and increase the input power to the electron gun until it reaches 10KW. The shutter 8 was closed to block vapor deposition on the substrate 2 until 3 minutes elapsed, and then the shutter 8 was opened to form a vapor deposited film on the substrate 2. The deposition time was set to 20 minutes to obtain a film thickness of 7.4 μm.
ここで、第１の蒸着条件及び第２の蒸着条件に
於いて、後記する理由に基き所定時点より電子銃
への投入パワーを9KWに減少させている。 Here, under the first vapor deposition condition and the second vapor deposition condition, the power input to the electron gun is reduced to 9 KW from a predetermined point of time based on the reason described later.
第１の蒸着条件及び第２の蒸着条件によつて得
られた鉄・アルミニウム・硅素の合金膜の特性は
共に飽和磁束密度12000G、ビツカース硬度600、
電気抵抗85μΩcmであつた。その鉄・アルミニウ
ム・硅素の合金膜上に保護層としてSiO2膜を被
覆し、600℃で２時間熱処理した後徐冷した。そ
の時上記鉄・アルミニウム・硅素の合金膜の保磁
力は第１の蒸着条件のもの、第２の蒸着条件のも
の共に1.7Oeであつた。 The characteristics of the iron-aluminum-silicon alloy film obtained under the first and second vapor deposition conditions are a saturation magnetic flux density of 12000G, a Vickers hardness of 600,
The electrical resistance was 85μΩcm. The iron-aluminum-silicon alloy film was coated with a SiO 2 film as a protective layer, heat-treated at 600°C for 2 hours, and then slowly cooled. At that time, the coercive force of the iron-aluminum-silicon alloy film was 1.7 Oe under both the first vapor deposition condition and the second vapor deposition condition.
第２図に上記第１の蒸着条件（膜厚ｔ＝4.1μ
ｍ）及び第２の蒸着条件（膜厚ｔ＝7.4μｍ）によ
つて得た鉄・アルミニウム・硅素の合金膜の
0.5MHzでの実効透磁率の有効分μ′（0.5）で規格化
した実効透磁率の有効分μ′の周波数特性（0.5M
Hz乃至30MHz）を示す。同図に示される如く、実
効透磁率の有効分μ′の周波数特性において、膜厚
7.4μｍの鉄・アルミニウム・硅素の合金膜は膜厚
4.1μｍの鉄・アルミニウム・硅素の合金膜に比較
して低い周波数から減少を始めている。 Figure 2 shows the first vapor deposition conditions (film thickness t=4.1μ).
m) and the iron-aluminum-silicon alloy film obtained under the second vapor deposition condition (film thickness t = 7.4 μm).
Frequency characteristics of the effective permeability μ′ normalized by the effective permeability μ′ (0.5) at 0.5MHz (0.5M
Hz to 30MHz). As shown in the figure, in the frequency characteristics of the effective component μ′ of the effective magnetic permeability, the film thickness
The thickness of the iron-aluminum-silicon alloy film is 7.4μm.
Compared to the 4.1 μm iron-aluminum-silicon alloy film, the decrease starts at a lower frequency.
一般に高透磁率磁性材料には高周波において以
下に示す如く透磁率低下の原因となる損失が存在
する。即ち、(1)ヒステリシス損失、(2)渦電流損
失、(3)残留損失である。この中、上記(2)渦電流損
失は鉄・アルミニウム・硅素の合金膜の様な合金
磁性材料の場合大きな割合を占める。そして、膜
厚の厚いものの方がこの損失がより大きくな。 Generally, high permeability magnetic materials have losses that cause a decrease in permeability at high frequencies, as shown below. That is, (1) hysteresis loss, (2) eddy current loss, and (3) residual loss. Among these, the above-mentioned (2) eddy current loss occupies a large proportion in the case of alloy magnetic materials such as iron-aluminum-silicon alloy films. The thicker the film, the greater this loss.
これら磁気損失が原因して第２図の如く、膜厚
7.4μｍの鉄・アルミニウム・硅素の合金膜の実効
透磁率の有効分μ′の周波数特性は膜厚4.1μｍの
鉄・アルミニウム・硅素の合金膜に比べて特性の
立下がりが悪くなつていると考えられる。この観
点から、必要な高周波まで必要な透磁率を得るこ
とのできる鉄・アルミニウム・硅素の合金膜を得
る為には鉄・アルミニウム・硅素の合金膜を薄く
蒸着し、その上に非磁性膜（例えばSiO2膜）を
蒸着し、更にその上に鉄・アルミニウム・硅素の
合金膜を薄く蒸着し、更にその上に上記非磁性膜
を蒸着するという工程を繰り返し行なうという多
層構造を採ることが必要となる。第３図に鉄・ア
ルミニウム・硅素の合金膜を３層に分離して層設
し、トータルの層厚を22.5μｍとした鉄・アルミ
ニウム・硅素の合金膜の実効透磁率の有効分μ′の
周波数特性を示す。同図に示す如く層厚は22.5μ
ｍと厚くとも周波数特性は7.4μｍのものと同程度
の立下がり特性が得られている。尚、上記の如く
鉄・アルミニウム・硅素の合金膜の各層を分離し
て層設してなる多層構造膜を作成する場合は鉄・
アルミニウム・硅素の合金膜とその中間に位置す
る非磁性膜とは同一真空中にて連続工程にて蒸着
することが望ましい。その理由は鉄・アルミニウ
ム・硅素の合金膜の表面が活性であるので、その
表面が大気に触れることによる表面酸化等による
鉄・アルミニウム・硅素の合金膜の特性劣化を防
ぐことになるからである。 Due to these magnetic losses, the film thickness increases as shown in Figure 2.
The frequency characteristics of the effective component μ′ of the effective magnetic permeability of a 7.4 μm thick iron-aluminum-silicon alloy film have a worse fall in characteristics than a 4.1 μm thick iron-aluminum-silicon alloy film. Conceivable. From this point of view, in order to obtain an alloy film of iron, aluminum, and silicon that can obtain the necessary magnetic permeability up to the required high frequency, a thin alloy film of iron, aluminum, and silicon is deposited, and then a nonmagnetic film ( It is necessary to adopt a multilayer structure in which the process of repeatedly depositing a SiO 2 film (for example, a SiO 2 film), then depositing a thin alloy film of iron, aluminum, and silicon on top of that, and then depositing the above-mentioned nonmagnetic film on top of that is necessary. becomes. Figure 3 shows the effective permeability μ′ of the iron-aluminum-silicon alloy film, which is separated into three layers and has a total layer thickness of 22.5 μm. Indicates frequency characteristics. As shown in the figure, the layer thickness is 22.5μ
Even though the thickness is 7.4 μm, the frequency characteristics are similar to those of 7.4 μm. In addition, when creating a multilayer structure film made by separately layering each layer of an alloy film of iron, aluminum, and silicon as described above,
It is desirable that the aluminum-silicon alloy film and the nonmagnetic film located therebetween are deposited in the same vacuum in a continuous process. The reason is that the surface of the iron-aluminum-silicon alloy film is active, which prevents the properties of the iron-aluminum-silicon alloy film from deteriorating due to surface oxidation caused by exposure to the atmosphere. .
さて、上記の如き多層構造膜を作成する場合、
鉄・アルミニウム・硅素の合金膜の表面が滑らか
であるという点が極めて重要になる。何故ならば
鉄・アルミニウム・硅素の合金膜の表面に突起物
がある場合その様な膜上に非磁性膜を被覆し、更
にその上に同様な突起物がある鉄・アルミニウ
ム・硅素の合金膜を被覆する構造とすれば、各
鉄・アルミニウム・硅素の合金膜間において磁気
的、電気的シヨートを引き起こす可能性があり不
安定であるからである。しかし、本発明では上記
鉄・アルミニウム・硅素の合金膜の表面を滑らか
にする為の新規な技術的手段を採用している。 Now, when creating a multilayer structure film as described above,
It is extremely important that the surface of the iron-aluminum-silicon alloy film be smooth. This is because if there are protrusions on the surface of an iron-aluminum-silicon alloy film, a non-magnetic film is coated on such a film, and then an iron-aluminum-silicon alloy film with similar protrusions is coated on top of the non-magnetic film. This is because if the structure is coated with iron, aluminum, and silicon, there is a possibility that magnetic and electrical shorts may occur between the alloy films of iron, aluminum, and silicon, resulting in instability. However, the present invention employs a new technical means to smooth the surface of the iron-aluminum-silicon alloy film.
以下にこの技術的手段について説明を行なう。
第４図に蒸着工程におけるアルミニウム及び鉄の
各蒸着速度の変化特性を示す。同図における時間
的起点は前述の蒸着条件における電子銃への投入
パワーが10KWに達した時点である。同図に示す
如く電子銃への投入パワーが10KWに達したから
３分間シヤツターを閉成し、その後シヤツターを
開成するのであるが、アルミニウムの蒸着速度は
最初次第に減少するものの、ある時点（同図で12
分）を境にして上昇し、次に再び減少する。そし
て本発明者はこのアルミニウムの蒸着速度が上昇
する時に溶融状態の変化により突沸が発生するこ
とを見い出した。そしてこの突沸を防ぐ為には電
子銃への投入パワーをある程度（蒸着速度に影響
を及ぼさない程度…具体的には9KW）減少させ
れば良いことを見い出した。実際にはアルミニウ
ムの蒸着速度が上昇する時より僅か前（同図で11
分）から電子銃への投入パワーを減少させた。こ
の手法を用いた時鉄・アルミニウム・硅素の合金
の蒸着膜表面は非常に滑らかであつた。尚、同図
で12分から電子銃への投入パワーを減少させても
鉄・アルミニウム・硅素の合金の蒸着膜表面を滑
らかに出来ることを確認している。 This technical means will be explained below.
FIG. 4 shows the change characteristics of the evaporation rates of aluminum and iron in the evaporation process. The time starting point in the figure is when the power input to the electron gun reached 10 KW under the above-mentioned deposition conditions. As shown in the figure, when the power input to the electron gun reaches 10KW, the shutter is closed for 3 minutes, and then the shutter is opened.Although the aluminum evaporation rate initially decreases gradually, at a certain point ( at 12
minutes) and then decrease again. The inventor of the present invention has discovered that when the deposition rate of aluminum increases, bumping occurs due to a change in the molten state. We also discovered that in order to prevent this bumping, it is sufficient to reduce the power input to the electron gun to a certain extent (an amount that does not affect the deposition rate, specifically 9KW). In reality, the rate of aluminum deposition increased slightly earlier (at 11 in the figure).
(min) to reduce the input power to the electron gun. When this method was used, the surface of the deposited film of the iron-aluminum-silicon alloy was extremely smooth. In addition, the same figure confirms that even if the power input to the electron gun is reduced from 12 minutes onwards, the surface of the deposited film of the iron-aluminum-silicon alloy can be made smooth.
＜効果＞
本発明の手法は成膜速度の速い電子ビーム蒸着
によつて鉄・アルミニウム・硅素の合金膜を作成
するものであつて量産性に優れ、しかも従来のバ
ルクによるヘツドでは得られなかつた特性の改善
を得た。又従来のバルクによる加工の困難さも克
服できた。更に蒸着途中での突沸の発生を抑制で
き、多層構造膜を安定的に作成できたものであ
る。<Effects> The method of the present invention creates an alloy film of iron, aluminum, and silicon by electron beam evaporation, which has a high film formation rate, and is excellent in mass production, and has advantages that could not be obtained with conventional bulk heads. Obtained improved characteristics. Moreover, the difficulty of conventional bulk processing was also overcome. Furthermore, the occurrence of bumping during vapor deposition could be suppressed, and a multilayer structure film could be stably produced.
第１図は本発明に係る製法において用いた電子
ビーム蒸着装置の構成説明図、第２図は単層膜の
実効透磁率の有効分μ′の周波数特性のグラフ図、
第３図は多層膜の実効透磁率の有効分μ′の周波数
特性のグラフ図、第４図はFe、Al成分の蒸着速
度変化のグラフ図を示す。
図中、１：真空ベルジアー、２：基板、３：ヒ
ーター、４：ハース、５：合金タブレツト、６：
フイラメント、７：電子ビーム、８：シヤツタ
ー。
FIG. 1 is an explanatory diagram of the configuration of the electron beam evaporation apparatus used in the manufacturing method according to the present invention, and FIG. 2 is a graph of the frequency characteristics of the effective component μ' of the effective magnetic permeability of a single layer film.
FIG. 3 is a graph showing the frequency characteristics of the effective component μ' of the effective magnetic permeability of the multilayer film, and FIG. 4 is a graph showing changes in the deposition rate of Fe and Al components. In the figure, 1: Vacuum bell gear, 2: Substrate, 3: Heater, 4: Hearth, 5: Alloy tablet, 6:
Filament, 7: Electron beam, 8: Shutter.
Claims (1)
アルミニウムの組成が１乃至6wt％、硅素の組成
が20乃至35wt％である合金タブレツトを、真空
中で電子銃により電子ビームを照射することによ
り加熱せしめて、鉄・アルミニウム・硅素の合金
膜の蒸着を行う高透磁率合金膜の製造方法であつ
て、 前記アルミニウムの蒸着速度が上昇する時間近
辺に於いて電子銃への投入パワーを、突沸が発生
しない程度に減少せしめたことを特徴とする高透
磁率合金膜の製造方法。 ２ 前記合金膜を複数層形成し、各合金膜の間に
非磁性層を形成したことを特徴とする特許請求の
範囲第１項記載の高透磁率合金膜の製造方法。[Claims] 1. An alloy tablet composed of iron, aluminum, and silicon, with an aluminum composition of 1 to 6 wt% and a silicon composition of 20 to 35 wt%, is exposed to an electron beam in a vacuum using an electron gun. A method for producing a high magnetic permeability alloy film, in which an alloy film of iron, aluminum, and silicon is vapor-deposited by heating by irradiation, the method comprising: charging the film into an electron gun near the time when the vapor deposition rate of aluminum increases; A method for producing a high magnetic permeability alloy film, characterized in that power is reduced to an extent that bumping does not occur. 2. The method of manufacturing a high magnetic permeability alloy film according to claim 1, wherein a plurality of layers of the alloy film are formed, and a nonmagnetic layer is formed between each alloy film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17148583A JPS6062105A (en) | 1983-09-16 | 1983-09-16 | Manufacture of high magnetic permeability alloy film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17148583A JPS6062105A (en) | 1983-09-16 | 1983-09-16 | Manufacture of high magnetic permeability alloy film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6062105A JPS6062105A (en) | 1985-04-10 |
| JPH035645B2 true JPH035645B2 (en) | 1991-01-28 |
Family
ID=15923972
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17148583A Granted JPS6062105A (en) | 1983-09-16 | 1983-09-16 | Manufacture of high magnetic permeability alloy film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6062105A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2878654B2 (en) * | 1996-09-13 | 1999-04-05 | 理化学研究所 | Photosensitive resin composition |
-
1983
- 1983-09-16 JP JP17148583A patent/JPS6062105A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6062105A (en) | 1985-04-10 |
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