JPH0357073B2 - - Google Patents

Info

Publication number
JPH0357073B2
JPH0357073B2 JP60030663A JP3066385A JPH0357073B2 JP H0357073 B2 JPH0357073 B2 JP H0357073B2 JP 60030663 A JP60030663 A JP 60030663A JP 3066385 A JP3066385 A JP 3066385A JP H0357073 B2 JPH0357073 B2 JP H0357073B2
Authority
JP
Japan
Prior art keywords
flange
heating device
heating
chamber
crucible
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60030663A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60264396A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS60264396A publication Critical patent/JPS60264396A/ja
Publication of JPH0357073B2 publication Critical patent/JPH0357073B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
    • C30B23/066—Heating of the material to be evaporated
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/243—Crucibles for source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Vapour Deposition (AREA)
JP60030663A 1984-06-11 1985-02-20 分子線エピタキシ炉の加熱装置 Granted JPS60264396A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/619,106 US4518846A (en) 1984-06-11 1984-06-11 Heater assembly for molecular beam epitaxy furnace
US619106 2000-07-19

Publications (2)

Publication Number Publication Date
JPS60264396A JPS60264396A (ja) 1985-12-27
JPH0357073B2 true JPH0357073B2 (2) 1991-08-30

Family

ID=24480479

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60030663A Granted JPS60264396A (ja) 1984-06-11 1985-02-20 分子線エピタキシ炉の加熱装置

Country Status (4)

Country Link
US (1) US4518846A (2)
EP (1) EP0170800B1 (2)
JP (1) JPS60264396A (2)
DE (1) DE3560644D1 (2)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4900518A (en) * 1986-12-12 1990-02-13 Daidosanso K. K. Gaseous organic/inorganic thermal cracker for vacuum chemical epitaxy
US5156815A (en) * 1988-09-08 1992-10-20 Board Of Regents, The University Of Texas System Sublimating and cracking apparatus
US5080870A (en) * 1988-09-08 1992-01-14 Board Of Regents, The University Of Texas System Sublimating and cracking apparatus
US5034604A (en) * 1989-08-29 1991-07-23 Board Of Regents, The University Of Texas System Refractory effusion cell to generate a reproducible, uniform and ultra-pure molecular beam of elemental molecules, utilizing reduced thermal gradient filament construction
US5157240A (en) * 1989-09-13 1992-10-20 Chow Loren A Deposition heaters
US5031229A (en) * 1989-09-13 1991-07-09 Chow Loren A Deposition heaters
US5616180A (en) * 1994-12-22 1997-04-01 Northrop Grumman Corporation Aparatus for varying the flux of a molecular beam
KR100270319B1 (ko) * 1997-11-28 2000-10-16 정선종 에피택셜장치용 증발 도가니
US6541346B2 (en) 2001-03-20 2003-04-01 Roger J. Malik Method and apparatus for a self-aligned heterojunction bipolar transistor using dielectric assisted metal liftoff process
JP4673190B2 (ja) * 2005-11-01 2011-04-20 長州産業株式会社 薄膜堆積用分子線源とその分子線量制御方法
US20100282167A1 (en) * 2008-12-18 2010-11-11 Veeco Instruments Inc. Linear Deposition Source
WO2011065999A1 (en) * 2008-12-18 2011-06-03 Veeco Instruments Inc. Linear deposition source
US20100159132A1 (en) * 2008-12-18 2010-06-24 Veeco Instruments, Inc. Linear Deposition Source
TWI737718B (zh) 2016-04-25 2021-09-01 美商創新先進材料股份有限公司 含有瀉流源的沉積系統及相關方法
CN111534797B (zh) * 2020-05-25 2023-11-07 中国科学院上海技术物理研究所 一种超高真空束源炉坩埚除气装置

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3734056A (en) * 1970-11-03 1973-05-22 Dow Chemical Co Infrared spectroscopy apparatus
US3656454A (en) * 1970-11-23 1972-04-18 Air Reduction Vacuum coating apparatus
US3641973A (en) * 1970-11-25 1972-02-15 Air Reduction Vacuum coating apparatus
US3916034A (en) * 1971-05-21 1975-10-28 Hitachi Ltd Method of transporting substances in a plasma stream to and depositing it on a target
US3839084A (en) * 1972-11-29 1974-10-01 Bell Telephone Labor Inc Molecular beam epitaxy method for fabricating magnesium doped thin films of group iii(a)-v(a) compounds
CH588061A5 (2) * 1973-12-28 1977-05-31 Sarmac Sa
US4094269A (en) * 1974-06-14 1978-06-13 Zlafop Pri Ban Vapor deposition apparatus for coating continuously moving substrates with layers of volatizable solid substances
US4181544A (en) * 1976-12-30 1980-01-01 Bell Telephone Laboratories, Incorporated Molecular beam method for processing a plurality of substrates
US4137865A (en) * 1976-12-30 1979-02-06 Bell Telephone Laboratories, Incorporated Molecular beam apparatus for processing a plurality of substrates
JPS5394872A (en) * 1977-01-31 1978-08-19 Mitsubishi Electric Corp Fixing supporter for molecule beam evaporation source cell
JPS53110973A (en) * 1977-03-10 1978-09-28 Futaba Denshi Kogyo Kk Method and apparatus for manufacturing compounds
GB2066299B (en) * 1979-12-19 1983-02-02 Philips Electronic Associated Growing doped iii-v alloy layers by molecular beam epitaxy
JPS5714436U (2) * 1980-06-30 1982-01-25
US4330360A (en) * 1980-07-21 1982-05-18 Bell Telephone Laboratories, Incorporated Molecular beam deposition technique using gaseous sources of group V elements
US4447276A (en) * 1981-06-15 1984-05-08 The Post Office Molecular beam epitaxy electrolytic dopant source
US4392453A (en) * 1981-08-26 1983-07-12 Varian Associates, Inc. Molecular beam converters for vacuum coating systems
US4426237A (en) * 1981-10-13 1984-01-17 International Business Machines Corporation Volatile metal oxide suppression in molecular beam epitaxy systems
US4426569A (en) * 1982-07-13 1984-01-17 The Perkin-Elmer Corporation Temperature sensor assembly
US4550411A (en) * 1983-03-30 1985-10-29 Vg Instruments Group Limited Sources used in molecular beam epitaxy

Also Published As

Publication number Publication date
US4518846A (en) 1985-05-21
EP0170800A1 (en) 1986-02-12
DE3560644D1 (en) 1987-10-22
EP0170800B1 (en) 1987-09-16
JPS60264396A (ja) 1985-12-27

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