JPS60264396A - 分子線エピタキシ炉の加熱装置 - Google Patents

分子線エピタキシ炉の加熱装置

Info

Publication number: JPS60264396A
Authority: JP; Japan
Prior art keywords: flange; molecular beam; heating device; housing; furnace
Prior art date: 1984-06-11
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Granted

Application number

JP60030663A

Other languages

English (en)

Japanese (ja)

Other versions

JPH0357073B2 (2

Inventor

ジヨン・ローレンス・フリーオウフ

トーマス・ネルソン・ジヤクソン

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

International Business Machines Corp

Original Assignee

International Business Machines Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1984-06-11

Filing date

1985-02-20

Publication date

1985-12-27

1985-02-20 Application filed by International Business Machines Corp filed Critical International Business Machines Corp

1985-12-27 Publication of JPS60264396A publication Critical patent/JPS60264396A/ja

1991-08-30 Publication of JPH0357073B2 publication Critical patent/JPH0357073B2/ja

Status Granted legal-status Critical Current

Links

238000010438 heat treatment Methods 0.000 title claims description 63
238000001451 molecular beam epitaxy Methods 0.000 title claims description 14
239000000758 substrate Substances 0.000 claims description 13
239000000126 substance Substances 0.000 claims description 7
238000000407 epitaxy Methods 0.000 description 9
239000000463 material Substances 0.000 description 9
239000004065 semiconductor Substances 0.000 description 7
239000000356 contaminant Substances 0.000 description 6
238000003780 insertion Methods 0.000 description 4
230000037431 insertion Effects 0.000 description 4
238000007789 sealing Methods 0.000 description 4
229910052715 tantalum Inorganic materials 0.000 description 4
GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 4
239000013078 crystal Substances 0.000 description 3
230000000694 effects Effects 0.000 description 3
238000002347 injection Methods 0.000 description 3
239000007924 injection Substances 0.000 description 3
238000000034 method Methods 0.000 description 3
238000011109 contamination Methods 0.000 description 2
230000008878 coupling Effects 0.000 description 2
238000010168 coupling process Methods 0.000 description 2
238000005859 coupling reaction Methods 0.000 description 2
238000010586 diagram Methods 0.000 description 2
238000005192 partition Methods 0.000 description 2
239000013590 bulk material Substances 0.000 description 1
238000006243 chemical reaction Methods 0.000 description 1
238000001816 cooling Methods 0.000 description 1
239000002178 crystalline material Substances 0.000 description 1
238000000151 deposition Methods 0.000 description 1
238000005485 electric heating Methods 0.000 description 1
238000005516 engineering process Methods 0.000 description 1
238000002474 experimental method Methods 0.000 description 1
230000009970 fire resistant effect Effects 0.000 description 1
230000020169 heat generation Effects 0.000 description 1
238000009413 insulation Methods 0.000 description 1
239000012212 insulator Substances 0.000 description 1
238000002955 isolation Methods 0.000 description 1
239000007788 liquid Substances 0.000 description 1
238000004519 manufacturing process Methods 0.000 description 1
229910052751 metal Inorganic materials 0.000 description 1
239000002184 metal Substances 0.000 description 1
239000002994 raw material Substances 0.000 description 1
239000003870 refractory metal Substances 0.000 description 1
238000000926 separation method Methods 0.000 description 1
239000007921 spray Substances 0.000 description 1
239000010409 thin film Substances 0.000 description 1

Classifications

- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
- C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
- C30B23/066—Heating of the material to be evaporated
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/243—Crucibles for source material
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks

Landscapes

Chemical & Material Sciences (AREA)
Engineering & Computer Science (AREA)
Materials Engineering (AREA)
Metallurgy (AREA)
Organic Chemistry (AREA)
Chemical Kinetics & Catalysis (AREA)
Mechanical Engineering (AREA)
Crystallography & Structural Chemistry (AREA)
Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Crystals, And After-Treatments Of Crystals (AREA)
Physical Vapour Deposition (AREA)

JP60030663A 1984-06-11 1985-02-20 分子線エピタキシ炉の加熱装置 Granted JPS60264396A (ja)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
US06/619,106 US4518846A (en)	1984-06-11	1984-06-11	Heater assembly for molecular beam epitaxy furnace
US619106		2000-07-19

Publications (2)

Publication Number	Publication Date
JPS60264396A true JPS60264396A (ja)	1985-12-27
JPH0357073B2 JPH0357073B2 (2)	1991-08-30

Family

ID=24480479

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP60030663A Granted JPS60264396A (ja)	1984-06-11	1985-02-20	分子線エピタキシ炉の加熱装置

Country Status (4)

Country	Link
US (1)	US4518846A (2)
EP (1)	EP0170800B1 (2)
JP (1)	JPS60264396A (2)
DE (1)	DE3560644D1 (2)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4900518A (en) *	1986-12-12	1990-02-13	Daidosanso K. K.	Gaseous organic/inorganic thermal cracker for vacuum chemical epitaxy
US5156815A (en) *	1988-09-08	1992-10-20	Board Of Regents, The University Of Texas System	Sublimating and cracking apparatus
US5080870A (en) *	1988-09-08	1992-01-14	Board Of Regents, The University Of Texas System	Sublimating and cracking apparatus
US5034604A (en) *	1989-08-29	1991-07-23	Board Of Regents, The University Of Texas System	Refractory effusion cell to generate a reproducible, uniform and ultra-pure molecular beam of elemental molecules, utilizing reduced thermal gradient filament construction
US5157240A (en) *	1989-09-13	1992-10-20	Chow Loren A	Deposition heaters
US5031229A (en) *	1989-09-13	1991-07-09	Chow Loren A	Deposition heaters
US5616180A (en) *	1994-12-22	1997-04-01	Northrop Grumman Corporation	Aparatus for varying the flux of a molecular beam
KR100270319B1 (ko) *	1997-11-28	2000-10-16	정선종	에피택셜장치용 증발 도가니
US6541346B2 (en)	2001-03-20	2003-04-01	Roger J. Malik	Method and apparatus for a self-aligned heterojunction bipolar transistor using dielectric assisted metal liftoff process
JP4673190B2 (ja) *	2005-11-01	2011-04-20	長州産業株式会社	薄膜堆積用分子線源とその分子線量制御方法
US20100282167A1 (en) *	2008-12-18	2010-11-11	Veeco Instruments Inc.	Linear Deposition Source
WO2011065999A1 (en) *	2008-12-18	2011-06-03	Veeco Instruments Inc.	Linear deposition source
US20100159132A1 (en) *	2008-12-18	2010-06-24	Veeco Instruments, Inc.	Linear Deposition Source
TWI737718B (zh)	2016-04-25	2021-09-01	美商創新先進材料股份有限公司	含有瀉流源的沉積系統及相關方法
CN111534797B (zh) *	2020-05-25	2023-11-07	中国科学院上海技术物理研究所	一种超高真空束源炉坩埚除气装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS5394872A (en) *	1977-01-31	1978-08-19	Mitsubishi Electric Corp	Fixing supporter for molecule beam evaporation source cell
JPS5714436U (2) *	1980-06-30	1982-01-25

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3734056A (en) *	1970-11-03	1973-05-22	Dow Chemical Co	Infrared spectroscopy apparatus
US3656454A (en) *	1970-11-23	1972-04-18	Air Reduction	Vacuum coating apparatus
US3641973A (en) *	1970-11-25	1972-02-15	Air Reduction	Vacuum coating apparatus
US3916034A (en) *	1971-05-21	1975-10-28	Hitachi Ltd	Method of transporting substances in a plasma stream to and depositing it on a target
US3839084A (en) *	1972-11-29	1974-10-01	Bell Telephone Labor Inc	Molecular beam epitaxy method for fabricating magnesium doped thin films of group iii(a)-v(a) compounds
CH588061A5 (2) *	1973-12-28	1977-05-31	Sarmac Sa
US4094269A (en) *	1974-06-14	1978-06-13	Zlafop Pri Ban	Vapor deposition apparatus for coating continuously moving substrates with layers of volatizable solid substances
US4181544A (en) *	1976-12-30	1980-01-01	Bell Telephone Laboratories, Incorporated	Molecular beam method for processing a plurality of substrates
US4137865A (en) *	1976-12-30	1979-02-06	Bell Telephone Laboratories, Incorporated	Molecular beam apparatus for processing a plurality of substrates
JPS53110973A (en) *	1977-03-10	1978-09-28	Futaba Denshi Kogyo Kk	Method and apparatus for manufacturing compounds
GB2066299B (en) *	1979-12-19	1983-02-02	Philips Electronic Associated	Growing doped iii-v alloy layers by molecular beam epitaxy
US4330360A (en) *	1980-07-21	1982-05-18	Bell Telephone Laboratories, Incorporated	Molecular beam deposition technique using gaseous sources of group V elements
US4447276A (en) *	1981-06-15	1984-05-08	The Post Office	Molecular beam epitaxy electrolytic dopant source
US4392453A (en) *	1981-08-26	1983-07-12	Varian Associates, Inc.	Molecular beam converters for vacuum coating systems
US4426237A (en) *	1981-10-13	1984-01-17	International Business Machines Corporation	Volatile metal oxide suppression in molecular beam epitaxy systems
US4426569A (en) *	1982-07-13	1984-01-17	The Perkin-Elmer Corporation	Temperature sensor assembly
US4550411A (en) *	1983-03-30	1985-10-29	Vg Instruments Group Limited	Sources used in molecular beam epitaxy

1984
- 1984-06-11 US US06/619,106 patent/US4518846A/en not_active Expired - Fee Related
1985
- 1985-02-20 JP JP60030663A patent/JPS60264396A/ja active Granted
- 1985-05-17 DE DE8585106037T patent/DE3560644D1/de not_active Expired
- 1985-05-17 EP EP85106037A patent/EP0170800B1/en not_active Expired

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS5394872A (en) *	1977-01-31	1978-08-19	Mitsubishi Electric Corp	Fixing supporter for molecule beam evaporation source cell
JPS5714436U (2) *	1980-06-30	1982-01-25

Also Published As

Publication number	Publication date
US4518846A (en)	1985-05-21
EP0170800A1 (en)	1986-02-12
DE3560644D1 (en)	1987-10-22
EP0170800B1 (en)	1987-09-16
JPH0357073B2 (2)	1991-08-30

Publication	Publication Date	Title
JPH0357073B2 (2)	1991-08-30
EP0271351B1 (en)	1993-06-16	Vacuum evaporating apparatus
JPH04196528A (ja)	1992-07-16	マグネトロンエッチング装置
CA2066573A1 (en)	1991-03-14	Deposition heaters
US5522936A (en)	1996-06-04	Thin film deposition apparatus
KR100728400B1 (ko)	2007-06-13	탑재대 장치의 부착 구조체, 기판 처리 장치 및 탑재대 장치의 부착 구조체에 있어서의 급전선 사이의 방전 방지 방법
JPH0774234A (ja)	1995-03-17	静電チャックの電極構造、この組み立て方法、この組み立て治具及び処理装置
JPH01503703A (ja)	1989-12-14	Ｍｏｃｖｄ装置用石英ガラス反応管
TW452882B (en)	2001-09-01	Large area plasma source
US6193803B1 (en)	2001-02-27	Substrate holding apparatus for processing semiconductors
JPH07283292A (ja)	1995-10-27	シール機構並びにこのシール機構を用いた処理装置及び処理方法
KR102742206B1 (ko)	2024-12-12	세라믹 절연체 및 알루미늄 슬리브를 갖는 전기 커넥터 및 이를 제조하기 위한 방법
JPS60245213A (ja)	1985-12-05	プラズマ処理装置
JPH11238596A (ja)	1999-08-31	プラズマ処理装置
JP2797111B2 (ja)	1998-09-17	スパッタ装置
JPS63200523A (ja)	1988-08-18	化学気相成長装置
JPH03285896A (ja)	1991-12-17	ホルダ
JPS6147628A (ja)	1986-03-08	半導体薄膜形成法
JPH01173711A (ja)	1989-07-10	薄膜形成装置
JPH0610675Y2 (ja)	1994-03-16	プラズマ処理装置
KR100329775B1 (ko)	2002-05-09	플라즈마디스플레이패널제조를위한배기,봉착장치및방법
JPH11324917A (ja)	1999-11-26	クライオポンプ
JPS6016891A (ja)	1985-01-28	磁界印加結晶製造方法および磁界印加結晶製造装置
JPH0585061U (ja)	1993-11-16	レーザ発振装置
JPH02185978A (ja)	1990-07-20	プラズマｃｖｄ装置