JPH0357629B2 - - Google Patents
Info
- Publication number
- JPH0357629B2 JPH0357629B2 JP20934385A JP20934385A JPH0357629B2 JP H0357629 B2 JPH0357629 B2 JP H0357629B2 JP 20934385 A JP20934385 A JP 20934385A JP 20934385 A JP20934385 A JP 20934385A JP H0357629 B2 JPH0357629 B2 JP H0357629B2
- Authority
- JP
- Japan
- Prior art keywords
- epoxy resin
- light
- infrared light
- chip
- lead frame
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Light Receiving Elements (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は耐湿性の高い光結合素子の製造方法
に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to a method for manufacturing an optical coupling element with high moisture resistance.
一般に光結合素子においては、入出力間の絶縁
耐力と光伝達効率の２つの要素が主要特性となつ
ている。特に絶縁耐力を向上させるためには従来
から各種の構造が提案されており、その中でも第
２図に示すような２重モールド構造が入出力間の
絶縁距離が充分とれることから一般的に使用され
ている。すなわち第２図において、１は発光側の
リードフレーム、２は受光側のリードフレームで
あり、発光側のリードフレーム１には赤外発光ダ
イオードチツプ（以下チツプと称する）３がAg
ペースト等の鑞材４によりダイボンドされ、さら
に金線等のワイヤ５により配線されてそれらの周
面がシリコーン樹脂等の赤外光透過ワニス６でコ
ーテイングされている。一方、受光側のリードフ
レーム２にはチツプ３と対向する部分に例えばホ
トトランジスタ、ホトトライアツクあるいはホト
サイリスタ等の受光チツプ７がAgペーストある
いは半田等の鑞材４によりダイボンドされ、さら
に金線等のワイヤ５により配線されている。そし
て、発光側のリードフレーム１と受光側のリード
フレーム２とが、そのチツプ３と受光チツプ７と
を対向させて重ね合わされ、それらを包むように
して赤外光透過エポキシ樹脂８によりモールドさ
れ、さらにこのエポキシ樹脂８の外面が光遮光性
エポキシ樹脂９によりモールドされている。最後
に発光側、受光側のリードフレーム１，２のタイ
パーが切断されリードが成形されて２重モールド
構造の光結合素子が構成される。
Generally, two main characteristics of an optical coupling device are dielectric strength between input and output and optical transmission efficiency. In particular, various structures have been proposed to improve dielectric strength. Among them, the double mold structure shown in Figure 2 is commonly used because it provides a sufficient insulation distance between input and output. ing. That is, in FIG. 2, 1 is a lead frame on the light emitting side, 2 is a lead frame on the light receiving side, and the lead frame 1 on the light emitting side has an infrared light emitting diode chip (hereinafter referred to as a chip) 3 attached to the Ag.
They are die-bonded with a solder material 4 such as paste, and further wired with wires 5 such as gold wires, and their peripheral surfaces are coated with infrared light transmitting varnish 6 such as silicone resin. On the other hand, a light-receiving chip 7 such as a phototransistor, a phototriax, or a photothyristor is die-bonded to a portion of the lead frame 2 on the light-receiving side opposite to the chip 3 using a filler material 4 such as Ag paste or solder, and further includes a gold wire or the like. The wires 5 are used for wiring. Then, the lead frame 1 on the light emitting side and the lead frame 2 on the light receiving side are overlapped with the chip 3 and the light receiving chip 7 facing each other, and are molded with an infrared light transmitting epoxy resin 8 so as to wrap them. The outer surface of the epoxy resin 8 is molded with a light-shielding epoxy resin 9. Finally, the tiepers of the lead frames 1 and 2 on the light emitting side and the light receiving side are cut and leads are molded to form an optical coupling element with a double mold structure.
このように構成される光結合素子は、赤外光透
過エポキシ樹脂８として例えば酸無水硬化エポキ
シ樹脂あるいはフエノール硬化エポキシ樹脂等を
用いているので、両リードフレーム１，２上にバ
リ１０が発生する。一般的に赤外透過エポキシ樹
脂は、金属に対する密着度が弱く、耐湿性が問題
となることがしばしばあつた。このため、前述し
た構成では、赤外光透過エポキシ樹脂８が光遮光
性エポキシ樹脂９により被覆されているので、赤
外光透過エポキシ樹脂８のバリ１０がリードフレ
ーム１，２上に付着し、高温高湿試験およびプレ
ツシヤクツカー試験（PCT）において、チツプ
３および受光チツプ７の耐圧が劣化する現象が生
じる。 In the optical coupling device constructed in this manner, for example, an acid anhydride cured epoxy resin or a phenol cured epoxy resin is used as the infrared light transmitting epoxy resin 8, so that burrs 10 are generated on both lead frames 1 and 2. . Generally, infrared transmitting epoxy resins have weak adhesion to metals, and moisture resistance has often been a problem. Therefore, in the above-described configuration, since the infrared light transmitting epoxy resin 8 is covered with the light shielding epoxy resin 9, the burrs 10 of the infrared light transmitting epoxy resin 8 adhere to the lead frames 1 and 2. In the high temperature and high humidity test and the pressure converter test (PCT), a phenomenon occurs in which the withstand pressure of the chip 3 and the light receiving chip 7 deteriorates.
従来の光結合素子は、以上のように構成されて
いるので、耐湿性を向上させなければならず、内
部モールド、つまり赤外光透過エポキシ樹脂のリ
ードフレームに付着したバリを取り除くことが必
要であつた。
Conventional optical coupling devices are constructed as described above, so it is necessary to improve moisture resistance, and it is necessary to remove burrs attached to the internal mold, that is, the lead frame made of infrared light-transmitting epoxy resin. It was hot.
この発明に係る光結合素子の製造方法は、発光
素子部と受光素子部とを赤外光透過エポキシ樹脂
でモールドした後、リードフレーム上に付着した
バリを除去し、しかる後、光遮光性エポキシ樹脂
をモールドするものである。
In the method for manufacturing an optical coupling device according to the present invention, after molding a light emitting element part and a light receiving element part with an infrared light transmitting epoxy resin, burrs adhering to the lead frame are removed, and then a light shielding epoxy resin is molded. It molds resin.
この発明においては、リードフレーム上に付着
した赤外光透過エポキシ樹脂のバリを除去するこ
とにより、リードフレームと光遮光性エポキシ樹
脂との間に密着性の低い赤外光透過エポキシ樹脂
が介在されなくなり、耐湿性が向上される。
In this invention, by removing burrs from the infrared light transmitting epoxy resin adhered to the lead frame, the infrared light transmitting epoxy resin with low adhesion is interposed between the lead frame and the light shielding epoxy resin. moisture resistance is improved.
以下、この発明の一実施例を図面を用いて説明
する。
An embodiment of the present invention will be described below with reference to the drawings.
第１図は本発明による光結合素子の製造方法の
一実施例を説明するための断面図である。同図に
おいて、まず、発光側リードフレーム１の所定位
置にチツプ３をAgペースト等の鑞材４でダイボ
ンドする。また、同様に受光側リードフレーム２
の前記チツプ３と対向する位置に受光チツプ７を
Agペーストあるいは半田等の鑞材４でダイボン
ドする。次にチツプ３および受光チツプ７をAu
線、Al線、Cu線等のワイヤ５でそれぞれ配線を
行なつた後、チツプ３上にシリコーン等の赤外光
透過ワニス６でコーテイングを施こす。引き続き
発光側のリードフレーム１と受光側のリードフレ
ーム２とを対向させるように重ね合わせた後、赤
外光透過エポキシ樹脂８でチツプ３、受光チツプ
７およびワイヤ７等を包むように内部モールドす
る。しかる後、液体ホーニング装置（ガラスビー
ズ等の材料）、電界バリ取り装置あるいは化学バ
リ取り液を用いてバリ取りを施こし、リードフレ
ーム１，２上に付着した前記赤外光透過エポキシ
樹脂８のバリを完全に除去する。さらに前記赤外
光透過エポキシ樹脂８の外周部を光遮光性エポキ
シ樹脂９でモールドした後、リードフレーム１，
２のタイバーを切断してリードを成形する。 FIG. 1 is a cross-sectional view for explaining one embodiment of the method for manufacturing an optical coupling device according to the present invention. In the figure, first, a chip 3 is die-bonded to a predetermined position of a light-emitting lead frame 1 using a solder material 4 such as Ag paste. Similarly, the light receiving side lead frame 2
A light receiving chip 7 is placed at a position opposite to the chip 3.
Die bond with a solder material 4 such as Ag paste or solder. Next, chip 3 and light receiving chip 7 are made of Au.
After wiring is performed using wires 5 such as wires, Al wires, Cu wires, etc., the chip 3 is coated with an infrared light transmitting varnish 6 made of silicone or the like. Subsequently, the light-emitting side lead frame 1 and the light-receiving side lead frame 2 are overlapped so as to face each other, and then internally molded with an infrared light-transmitting epoxy resin 8 so as to enclose the chip 3, the light-receiving chip 7, the wire 7, etc. Thereafter, deburring is performed using a liquid honing device (materials such as glass beads), an electric field deburring device, or a chemical deburring liquid, and the infrared light transmitting epoxy resin 8 attached to the lead frames 1 and 2 is removed. Remove burrs completely. Furthermore, after molding the outer circumference of the infrared light transmitting epoxy resin 8 with a light shielding epoxy resin 9, the lead frame 1,
Cut the tie bar 2 and form the lead.
このような方法によれば、チツプ３、受光チツ
プ７およびワイヤ５等を赤外光透過エポキシ樹脂
８でモールドした後、そのバリ取りを行つたこと
により、リードフレーム１，２上に付着した赤外
光透過エポキシ樹脂８のバリ１０（第２図参照）
が確実に除去されるとともに、リードフレーム
１，２の表面に微細な凹凸面１ａ，２ａが形成さ
れるので、光透過性エポキシ樹脂がリードフレー
ム１，２表面に直接的密着されてモールドされる
ことになり、したがつて外部から水分等が入る余
地が全くなくなり、耐湿性が大幅に向上される。 According to this method, the chip 3, the light receiving chip 7, the wire 5, etc. are molded with the infrared light transmitting epoxy resin 8, and then the burrs are removed. Burr 10 on external light-transmitting epoxy resin 8 (see Figure 2)
is reliably removed, and finely uneven surfaces 1a and 2a are formed on the surfaces of the lead frames 1 and 2, so that the light-transmitting epoxy resin is molded in direct contact with the surfaces of the lead frames 1 and 2. Therefore, there is no room for moisture etc. to enter from the outside, and the moisture resistance is greatly improved.
以上説明したようにこの発明によれば、内部モ
ールド時に発生したリードフレーム上のバリを確
実に除去するようにしたので、光結合素子の信頼
性が大幅に向上できるとともに、機械的強度も同
時に増大でき、さらには歩留りも向上できるなど
の極めて優れた効果が得られる。
As explained above, according to the present invention, the burrs generated on the lead frame during internal molding are reliably removed, so the reliability of the optical coupling device can be greatly improved, and the mechanical strength is also increased at the same time. Furthermore, extremely excellent effects such as improved yield can be obtained.
第１図はこの発明の一実施例を説明するための
光結合素子の断面図、第２図は従来の光結合素子
の断面図である。
１……発光側のリードフレーム、２……受光側
のリードフレーム、３……赤外発光ダイオードチ
ツプ（チツプ）、４……鑞材、５……ワイヤ、６
……ワニス、７……受光チツプ、８……赤外光透
過エポキシ樹脂、９……光遮光性エポキシ樹脂、
１０……バリ。
FIG. 1 is a sectional view of an optical coupling element for explaining an embodiment of the present invention, and FIG. 2 is a sectional view of a conventional optical coupling element. DESCRIPTION OF SYMBOLS 1... Lead frame on the light emitting side, 2... Lead frame on the light receiving side, 3... Infrared light emitting diode chip (chip), 4... Brazing material, 5... Wire, 6
... Varnish, 7 ... Light-receiving chip, 8 ... Infrared light transmitting epoxy resin, 9 ... Light-shielding epoxy resin,
10... Bali.
Claims (1)
ドチツプと受光チツプとを対向配置させ前記両チ
ツプを赤外光透過エポキシ樹脂で封止し、さらに
該赤外光透過エポキシ樹脂の外面を光遮光性エポ
キシ樹脂で封止してなる光結合素子において、前
記赤外光透過エポキシ樹脂を封止した後、前記リ
ードフレームの表面に付着した赤外光透過エポキ
シ樹脂を除去し、しかる後光遮光性エポキシ樹脂
を封止することを特徴とした光結合素子の製造方
法。1. An infrared light-emitting diode chip and a light-receiving chip are arranged facing each other on a pair of lead frames, and both chips are sealed with an infrared light-transmitting epoxy resin, and the outer surface of the infrared light-transmitting epoxy resin is coated with a light-shielding epoxy resin. In the optical coupling device sealed with resin, after sealing the infrared light transmitting epoxy resin, the infrared light transmitting epoxy resin adhering to the surface of the lead frame is removed, and then the light shielding epoxy resin is sealed. 1. A method for manufacturing an optical coupling device, characterized by sealing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60209343A JPS6267882A (en) | 1985-09-19 | 1985-09-19 | Manufacture of optocoupler |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60209343A JPS6267882A (en) | 1985-09-19 | 1985-09-19 | Manufacture of optocoupler |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6267882A JPS6267882A (en) | 1987-03-27 |
| JPH0357629B2 true JPH0357629B2 (en) | 1991-09-02 |
Family
ID=16571377
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60209343A Granted JPS6267882A (en) | 1985-09-19 | 1985-09-19 | Manufacture of optocoupler |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6267882A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2428435B1 (en) | 2010-09-14 | 2012-11-07 | Joseph Vögele AG | Track assembly |
-
1985
- 1985-09-19 JP JP60209343A patent/JPS6267882A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6267882A (en) | 1987-03-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH0448767A (en) | Resin-sealed semiconductor device | |
| KR101036987B1 (en) | Method for manufacturing semiconductor device | |
| JPS6151933A (en) | Manufacture of semiconductor device | |
| JPH0357629B2 (en) | ||
| JPH04363031A (en) | Semiconductor device | |
| KR100220244B1 (en) | Stack Package with Solder Bump | |
| JP2634249B2 (en) | Semiconductor integrated circuit module | |
| US6242801B1 (en) | Semiconductor device | |
| CN222339921U (en) | A packaging structure of a photoelectric coupler and a photoelectric coupler | |
| KR100308899B1 (en) | semiconductor package and method for fabricating the same | |
| JPS62171131A (en) | Semiconductor device | |
| JP3710522B2 (en) | Optical semiconductor device and manufacturing method thereof | |
| KR100209682B1 (en) | Manufacturing method of semiconductor package | |
| JP3201063B2 (en) | Semiconductor device | |
| JP2944591B2 (en) | Semiconductor device and manufacturing method thereof | |
| KR940006582B1 (en) | Ceramic semiconductor package structure and manufacturing method | |
| KR0124545Y1 (en) | Step type package | |
| JPH0379068A (en) | Semiconductor device | |
| JP2999639B2 (en) | Resin-sealed semiconductor device and method of manufacturing the same | |
| JP2702193B2 (en) | Method for manufacturing optical coupling element | |
| KR940008328B1 (en) | Film-type semiconductor package (F-PAC: Film-Type Package) and its manufacturing method | |
| JPH0366150A (en) | Semiconductor integrated circuit device | |
| JPH0637221A (en) | Resin-sealed semiconductor device | |
| JPS62132352A (en) | Manufacture of semiconductor device | |
| JPS61271848A (en) | Manufacture of semiconductor package |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |